CN104575532B - Cupro silicon sputtered target material and cupro silicon recording layer - Google Patents
Cupro silicon sputtered target material and cupro silicon recording layer Download PDFInfo
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- CN104575532B CN104575532B CN201310498740.8A CN201310498740A CN104575532B CN 104575532 B CN104575532 B CN 104575532B CN 201310498740 A CN201310498740 A CN 201310498740A CN 104575532 B CN104575532 B CN 104575532B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 163
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 163
- 239000010703 silicon Substances 0.000 title claims abstract description 163
- 239000013077 target material Substances 0.000 title claims abstract description 82
- 239000010949 copper Substances 0.000 claims abstract description 88
- 239000011651 chromium Chemical group 0.000 claims abstract description 42
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 25
- 230000007704 transition Effects 0.000 claims abstract description 23
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical group [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000010936 titanium Chemical group 0.000 claims abstract description 16
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 12
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052719 titanium Chemical group 0.000 claims abstract description 10
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 9
- 239000011733 molybdenum Chemical group 0.000 claims abstract description 9
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 41
- 229910052802 copper Inorganic materials 0.000 abstract description 34
- 230000003287 optical effect Effects 0.000 abstract description 16
- 230000010076 replication Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 112
- 229910045601 alloy Inorganic materials 0.000 description 27
- 239000000956 alloy Substances 0.000 description 27
- 230000000052 comparative effect Effects 0.000 description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 238000002310 reflectometry Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 235000013312 flour Nutrition 0.000 description 7
- 238000007731 hot pressing Methods 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 229910000676 Si alloy Inorganic materials 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- WCCJDBZJUYKDBF-UHFFFAOYSA-N copper silicon Chemical compound [Si].[Cu] WCCJDBZJUYKDBF-UHFFFAOYSA-N 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910018067 Cu3Si Inorganic materials 0.000 description 1
- 229910016344 CuSi Inorganic materials 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B7/2433—Metals or elements of Groups 13, 14, 15 or 16 of the Periodic Table, e.g. B, Si, Ge, As, Sb, Bi, Se or Te
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
- G11B7/266—Sputtering or spin-coating layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Manufacturing Optical Record Carriers (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
Abstract
The invention provides a kind of cupro silicon sputtered target material and a kind of cupro silicon recording layer.The cupro silicon sputtered target material and the cupro silicon recording layer are by CuaSibMcAlloy forms, wherein, M is nickel, chromium, molybdenum or titanium, and a is that 0.55 to 0.93, b is that 0.05 to 0.25, c is 0.02 to 0.20, and a, b and c summation are 1.Because the cupro silicon recording layer possesses copper, silicon and nickel, chromium, molybdenum or the titanium of proper content, therefore its phase transition temperature makes it be applied to that in optical recording media good record quality, stability and faster replication rate can be obtained higher than 150 DEG C and less than 500 DEG C.
Description
Technical field
The present invention is espespecially a kind of to be applied to optical recording matchmaker on a kind of cupro silicon sputtered target material and cupro silicon recording layer
The cupro silicon sputtered target material and cupro silicon recording layer of body, belong to optical recording media technical field.
Background technology
Blu-ray Disc (Blu-ray Disc) is the work that reading and writing data is carried out using the blue laser light that wavelength is 405 nanometers
To make, it has been widely used in storing the data of high power capacity and the video/audio archive of high image quality because possessing the advantage of high power capacity, into
For the ray Disc specifications of next generation.
The layer structure of general single once-type Blu-ray Disc sequentially includes：Substrate, reflecting layer, the first dielectric layer, double notes
Record layer, the second dielectric layer and protective layer.In single once-type Blu-ray Disc common at present, double record layer includes copper/amorphous
Matter silicon double record layer and cupro silicon/two kinds of uncrystalline silicon double record layer.
By taking the single once-type Blu-ray Disc containing copper/uncrystalline silicon double record layer as an example, single once-type Blu-ray Disc
It is phase in version mechanism (the metal induced crystallization phase change using metal induced lattice
Mechanism), uncrystalline silicon is enable under relatively low heat treatment temperature, inducing uncrystalline silicon through copper metal is crystallized, by
This lifting double record layer is completed data and write to the real-time reflectivity intensity (real-time reflectivity) of blue laser light
The work entered.
However, copper/uncrystalline silicon double record layer is because with the phase transition temperature higher than more than 500 DEG C, causing containing such a
Within shorter time of contact phase in version can not occur for the single once-type Blu-ray Disc of double record layer, if uncrystalline silicon can not be in
It is fully crystallized under certain heat treatment temperature, the burning performance of single once-type Blu-ray Disc will be influenceed, even deteriorate its electrical equipment
Signal.Therefore must improve write power to more than 8 milliwatts using such a single once-type Blu-ray Disc, make copper/noncrystalline
Silicon double record layer surface produces higher temperature, can just be smoothed out phase in version, completes the work of data write-in；But improve write-in
Power can increase the burning cost of single once-type Blu-ray Disc, and also not be suitable for the single write-in-type blue light of high speed burning
CD.
Therefore, to solve the above problems, prior art exploitation another kind contains cupro silicon/uncrystalline silicon double record layer
Single once-type Blu-ray Disc, using cupro silicon layer sputter on noncrystalline silicon layer, it easily reacts and produced with noncrystalline silicon layer
Pig copper silicon (Cu3Si) the property of crystalline phase, cupro silicon/uncrystalline silicon double record layer is enable under relatively low heat treatment temperature
Generation phase in version.However, because the phase transition temperature of cupro silicon/uncrystalline silicon double record layer is less than 150 DEG C, cause copper metal
It is easy to that spontaneous reaction and oxidation occurs, and reduces the real-time reflectivity intensity of such a single once-type Blu-ray Disc, causes
The single once-type Blu-ray Disc containing cupro silicon/uncrystalline silicon double record layer is set often to have the problem of record quality is bad.
The content of the invention
In order to solve the above technical problems, it is an object of the invention to provide a kind of cupro silicon sputtered target material and a kind of copper silicon
Alloy recording layer, that is, a kind of cupro silicon material suitable for optical recording media is provided, and then lift the record of optical recording media
Quality and replication rate.
For the above-mentioned purpose, the present invention provides a kind of cupro silicon sputtered target material, and it is by CuaSibMcAlloy forms, wherein,
M (corrosion resistance element) is nickel, chromium, molybdenum or titanium, and a is that 0.55 to 0.93, b is that 0.05 to 0.25, c is 0.02 to 0.20, and a, b
And c summation is 1.
Accordingly, because the cupro silicon sputtered target material of the present invention has the copper, silicon and M of proper content, therefore the cupro silicon
Sputtered target material can be used in sputter and form the cupro silicon recording layer for being applied to optical recording media.
In above-mentioned cupro silicon sputtered target material, it is preferable that a is 0.70 to 0.80.
In above-mentioned cupro silicon sputtered target material, it is preferable that b is 0.05 to 0.12.
In above-mentioned cupro silicon sputtered target material, it is preferable that c is 0.15 to 0.20.
In above-mentioned cupro silicon sputtered target material, it is preferable that a be 0.70 to 0.80, b be 0.05 to 0.12, c be 0.15 to
0.20, and a, b and c summation are 1.
According to the embodiment of the present invention, it is preferable that the structure of above-mentioned cupro silicon sputtered target material is by one
Substrate phase and a metal phase are formed, wherein, the substrate is mutually mainly made up of cupro silicon, and the metal phase is mainly made up of M, institute
It is nickel, chromium, molybdenum or titanium to state M.
The cupro silicon sputtered target material of the present invention can be via obtained by powder metallurgic method or melting and casting method；Preferably, originally
The cupro silicon sputtered target material of invention is as obtained by powder metallurgic method.
The present invention also provides a kind of cupro silicon recording layer, and it is by CuaSibMcAlloy form, wherein, M be nickel, chromium, molybdenum or
Titanium, a are that 0.55 to 0.93, b is that 0.05 to 0.25, c is 0.02 to 0.20, and a, b and c summation are 1.
Accordingly, because the cupro silicon recording layer of the present invention has copper, silicon and nickel, chromium, molybdenum or the titanium of proper content, therefore
There can be the phase transition temperature higher than 150 DEG C and less than 500 DEG C.
In above-mentioned cupro silicon recording layer, it is preferable that a is 0.70 to 0.80.
In above-mentioned cupro silicon recording layer, it is preferable that b is 0.05 to 0.12.
In above-mentioned cupro silicon recording layer, it is preferable that c is 0.15 to 0.20.
In above-mentioned cupro silicon recording layer, it is preferable that a be 0.70 to 0.80, b be 0.05 to 0.12, c be 0.15 to
0.20, and a, b and c summation are 1.
According to the embodiment of the present invention, it is preferable that the phase transition temperature of above-mentioned cupro silicon recording layer is 150 DEG C
To 320 DEG C.It is highly preferred that the phase transition temperature of above-mentioned cupro silicon recording layer is 200 DEG C to 250 DEG C.Accordingly, comprising the copper silicon
The optical recording media of alloy recording layer can possess higher modulation value (modulation).
According to the embodiment of the present invention, it is preferable that the thickness of above-mentioned cupro silicon recording layer is 2 nanometers to 50 and received
Rice.
In the present invention, the cupro silicon recording layer is formed by above-mentioned cupro silicon sputtered target material institute sputter.
The present invention also provides a kind of single once-type Blu-ray Disc, and it includes above-mentioned cupro silicon recording layer.
The cupro silicon recording layer of the present invention is applied to can possess following advantages in optical recording media：
(1), appropriate phase transition temperature range：
By regulating and controlling the copper, silicon and corrosion resistance element of proper content, and suitably reduce in cupro silicon recording layer
Silicone content, therefore the cupro silicon recording layer of the present invention can possess the phase transition temperature higher than 150 DEG C and less than 500 DEG C.
(2) quality, is preferably recorded：
The cupro silicon recording layer of the present invention can substitute copper/uncrystalline silicon double record layer of prior art and cupro silicon/
Uncrystalline silicon double record layer, is present in optical recording media in a manner of single-recordng-layer, makes to have comprising its optical recording media
Higher modulation value and reduced value, and then lift the record quality of optical recording media.
(3), stability is high：
The cupro silicon recording layer of the present invention is avoided that because having the phase transition temperature higher than 150 DEG C and less than 500 DEG C
Spontaneous reaction and oxidation occur for copper metal, and then lift the stability of cupro silicon recording layer.
Further, should when the cupro silicon recording layer of the present invention has 150 DEG C to 340 DEG C of phase transition temperature
Cupro silicon recording layer is applied to can more possess following advantages in optical recording media：
(1), burning cost is low：
The write power (that is, relatively low heat treatment temperature) of 4 to 6 milliwatts is only needed, just can ensure that cupro silicon recording layer is sent out
Raw phase in version, therefore can effectively reduce the burning cost of optical recording media.
(2), suitable for the optical recording media of high speed burning：
Compared to the copper/uncrystalline silicon double record layer and cupro silicon/uncrystalline silicon double record layer of prior art, the copper silicon
Alloy recording layer is to be present in a manner of single-recordng-layer in optical recording media, and with 150 DEG C to 320 DEG C of phase in version temperature
Degree, therefore phase in version can occur within shorter time of contact, the replication rate for lifting optical recording media reaches 6X (216Mbit/s) extremely
12X(512Mbit/s)。
Brief description of the drawings
Fig. 1 is the sweep electron microscope striograph of the cupro silicon sputtered target material of embodiment 1.
Fig. 2 is the sweep electron microscope striograph of the cupro silicon sputtered target material of comparative example 1.
Fig. 3 is that real-time reflectivity of the cupro silicon recording layer of embodiment 7 and comparative example 3 at a temperature of different heat treatment is strong
Spend result figure.
Primary clustering symbol description：
The light gray form and aspect A ' of the light gray form and aspect A comparative examples 1 of embodiment 1
First dark-grey form and aspect B ' of the dark-grey form and aspect B comparative examples 1 of embodiment 1
Second dark-grey form and aspect C ' of comparative example 1
Embodiment
Hereinafter, embodiments of the present invention will be illustrated by specific examples below, those skilled in the art can be via this
The content of specification understands the advantages of present invention can reach and effect easily, and enters under without departing from the spirit
The various modifications of row and change, to implement or using present disclosure.
Prepare cupro silicon sputtered target material
Embodiment 1：Cu0.75Si0.08Cr0.17Alloy sputtered target material
1195.76 grams of copper powder, 56.37 grams of silica flour, 221.78 grams of chromium powder are uniformly mixed, in 600 DEG C to 800 DEG C
Temperature and 500 bars (bar) pressure under, continue hot pressing 3 hours, Cu be made0.75Si0.08Cr0.17Alloy sputtered target material.
In obtained cupro silicon sputtered target material, copper accounts for the overall atomic percent of cupro silicon sputtered target material about 75；
Silicon accounts for the overall atomic percent of cupro silicon sputtered target material about 8；Chromium accounts for the overall atomic percent of cupro silicon sputtered target material about 17.
Refer to shown in Fig. 1, the Cu0.75Si0.08Cr0.17The sweep electron microscope striograph of alloy sputtered target material；In
In Fig. 1, the light gray form and aspect A (substrate phase) of embodiment 1 is CuSi alloys；The dark-grey form and aspect B (metal phase) of embodiment 1 is chromium metal
Phase.
Embodiment 2：Cu0.75Si0.08Ni0.17Alloy sputtered target material
1213.20 grams of copper powder, 57.20 grams of silica flour, 254.06 grams of nickel powder are uniformly mixed, in 600 DEG C to 800 DEG C
Temperature and 500bar pressure under, continue hot pressing 3 hours, Cu be made0.75Si0.08Ni0.17Alloy sputtered target material.
In obtained cupro silicon sputtered target material, copper accounts for the overall atomic percent of cupro silicon sputtered target material about 75；
Silicon accounts for the overall atomic percent of cupro silicon sputtered target material about 8；Nickel accounts for the overall atomic percent of cupro silicon sputtered target material about 17.
Embodiment 3：Cu0.75Si0.08Ti0.17Alloy sputtered target material
1110.59 grams of copper powder, 52.36 grams of silica flour, 189.75 grams of titanium valve are uniformly mixed, in 600 DEG C to 800 DEG C
Temperature and 500bar pressure under, continue hot pressing 3 hours, Cu be made0.75Si0.08Ti0.17Alloy sputtered target material.
In obtained cupro silicon sputtered target material, copper accounts for the overall atomic percent of cupro silicon sputtered target material about 75；
Silicon accounts for the overall atomic percent of cupro silicon sputtered target material about 8；Titanium accounts for the overall atomic percent of cupro silicon sputtered target material about 17.
Embodiment 4：Cu0.75Si0.08Mo0.17Alloy sputtered target material
955.77 grams of copper powder, 181.04 grams of silica flour, 42.07 grams of molybdenum powder are uniformly mixed, in 600 DEG C to 800 DEG C
Temperature and 500bar pressure under, continue hot pressing 3 hours, Cu be made0.75Si0.08Mo0.17Alloy sputtered target material.
In obtained cupro silicon sputtered target material, copper accounts for the overall atomic percent of cupro silicon sputtered target material about 75；
Silicon accounts for the overall atomic percent of cupro silicon sputtered target material about 8；Molybdenum accounts for the overall atomic percent of cupro silicon sputtered target material about 17.
Embodiment 5：Cu0.75Si0.05Cr0.20Alloy sputtered target material
960.63 grams of copper powder, 181.96 grams of silica flour, 22.92 grams of chromium powder are uniformly mixed, in 600 DEG C to 800 DEG C
Temperature and 500bar pressure under, continue hot pressing 3 hours, Cu be made0.75Si0.05Cr0.20Alloy sputtered target material.
In obtained cupro silicon sputtered target material, copper accounts for the overall atomic percent of cupro silicon sputtered target material about 75；
Silicon accounts for the overall atomic percent of cupro silicon sputtered target material about 5；Chromium accounts for the overall atomic percent of cupro silicon sputtered target material about 20.
Embodiment 6：Cu0.74Si0.24Cr0.02Alloy sputtered target material
1069.76 grams of copper powder, 153.34 grams of silica flour, 23.66 grams of chromium powder are uniformly mixed, in 600 DEG C to 800 DEG C
Temperature and 500bar pressure under, continue hot pressing 3 hours, Cu be made0.74Si0.24Cr0.02Alloy sputtered target material.
In obtained cupro silicon sputtered target material, copper accounts for the overall atomic percent of cupro silicon sputtered target material about 74；
Silicon accounts for the overall atomic percent of cupro silicon sputtered target material about 24；Chromium accounts for the overall atomic percent of cupro silicon sputtered target material about 2.
Comparative example 1：Cu0.69Si0.28Cr0.03Alloy sputtered target material
973.98 grams of copper powder, 174.69 grams of silica flour, 34.65 grams of chromium powder are uniformly mixed, in 600 DEG C to 800 DEG C
Temperature and 500bar pressure under, continue hot pressing 3 hours, Cu be made0.69Si0.28Cr0.03Alloy sputtered target material.
In obtained cupro silicon sputtered target material, copper accounts for the overall atomic percent of cupro silicon sputtered target material about 69；
Silicon accounts for the overall atomic percent of cupro silicon sputtered target material about 28；Chromium accounts for the overall atomic percent of cupro silicon sputtered target material about 3.
Refer to shown in Fig. 2, it is Cu0.69Si0.28Cr0.03The sweep electron microscope striograph of alloy sputtered target material；
In Fig. 2, the light gray form and aspect A ' of comparative example 1 is Cu0.69Si0.28Cr0.03The substrate phase of alloy sputtered target material, it is mainly by copper silicon
Alloy forms；And the first dark-grey form and aspect B ' of comparative example 1 and comparative example 1 the second dark-grey form and aspect C ' are Cu0.69Si0.28Cr0.03Close
The compound phase of golden sputtered target material, it is mainly made up of silicochromium and silicon.
Compared to the sweep electron microscope striograph of embodiment 1, due to the Cu of this comparative example 10.69Si0.28Cr0.03Close
The silicone content of golden sputtered target material is higher, therefore the light gray form and aspect A ' (substrate phase) of comparative example 1 is mainly cupro silicon, and comparative example 1
The first dark-grey form and aspect B ' and comparative example 1 the second dark-grey form and aspect C ' (compound phase) be respectively then silicochromium and silicon etc. into
Point.
Prepare the cupro silicon recording layer of single once-type Blu-ray Disc
Embodiment 7：Cu0.75Si0.08Cr0.17Recording layer
The present embodiment is using the Cu obtained by embodiment 10.75Si0.08Cr0.17Alloy sputtered target material, then splashed via direct current
Plating method, in the vacuum cavity of the millitorr (mtorr) of pressure about 3, sputter is formed on the dielectric layer of single once-type Blu-ray Disc
The Cu that about 50 nanometers of one thickness0.75Si0.08Cr0.17Recording layer.
Embodiment 8：Cu0.75Si0.08Ni0.17Recording layer
The present embodiment is using the Cu obtained by embodiment 20.75Si0.08Ni0.17Alloy sputtered target material, and generally via
Method sputter as described in embodiment 7 forms the Cu of about 50 nanometers of a thickness0.75Si0.08Ni0.17Recording layer.
Embodiment 9：Cu0.75Si0.08Ti0.17Recording layer
The present embodiment is using the Cu obtained by embodiment 30.75Si0.08Ti0.17Alloy sputtered target material, and generally via
Method sputter as described in embodiment 7 forms the Cu of about 50 nanometers of a thickness0.75Si0.08Ti0.17Recording layer.
Embodiment 10：Cu0.75Si0.08Mo0.17Recording layer
The present embodiment is using the Cu obtained by embodiment 40.75Si0.08Mo0.17Alloy sputtered target material, and generally via
Method sputter as described in embodiment 7 forms the Cu of about 50 nanometers of a thickness0.75Si0.08Mo0.17Recording layer.
Embodiment 11：Cu0.75Si0.05Cr0.20Recording layer
The present embodiment is using the Cu obtained by embodiment 50.75Si0.05Cr0.20Alloy sputtered target material, and generally via
Method sputter as described in embodiment 7 forms the Cu of about 50 nanometers of a thickness0.75Si0.05Cr0.20Recording layer.
Embodiment 12：Cu0.74Si0.24Cr0.02Recording layer
The present embodiment is using the Cu obtained by embodiment 60.74Si0.24Cr0.02Alloy sputtered target material, and generally via
Method sputter as described in embodiment 7 forms the Cu of about 50 nanometers of a thickness0.74Si0.24Cr0.02Recording layer.
Comparative example 2：Copper/uncrystalline silicon double record layer
This comparative example is to use fine copper sputtered target material, with DC sputtering method, in pressure about 3mtorr vacuum cavity,
First sputter forms the copper recording layer of a thickness about 2-50 nanometers on the dielectric layer of single once-type Blu-ray Disc；Then, reuse
Uncrystalline silicon sputtered target material, with DC sputtering method, in the noncrystalline silicon layer that about 50 nanometers of a thickness is formed on the copper recording layer.
Accordingly, the recording layer of this comparative example is copper/uncrystalline silicon double record layer.
Comparative example 3：Cu0.69Si0.28Cr0.03Recording layer
This comparative example is using the Cu obtained by comparative example 10.69Si0.28Cr0.03Alloy sputtered target material, and generally via
Method sputter as described in embodiment 7 forms the Cu of about 50 nanometers of a thickness0.69Si0.28Cr0.03Recording layer.
The characteristic test of recording layer
Test example 1：Phase transition temperature
In this test example, using real-time reflectivity measurement equipment instrument, respectively with the heating speed per minute for improving 100 DEG C
Rate, obtain cupro silicon recording layer, copper/uncrystalline silicon double record layer of comparative example 2 and the copper of comparative example 3 of embodiment 7 to 12
Curve map (as shown in Figure 3) of the real-time reflectivity intensity of silicon alloy recording layer to heat treatment temperature；Again via analysis each sample
Curve map, with its greatest gradient (being calculated using mathematic integral) for phase transition temperature, the measurement such as table 1 below institute of each sample
Show.
Table 1：Embodiment 7 to 12 and the phase transition temperature measurement of the recording layer of comparative example 2 and 3.
| Numbering | Recording layer | Phase transition temperature |
| Embodiment 7 | Cu0.75Si0.08Cr0.17Recording layer | 205℃ |
| Embodiment 8 | Cu0.75Si0.08Ni0.17Recording layer | 220℃ |
| Embodiment 9 | Cu0.75Si0.08Ti0.17Recording layer | 230℃ |
| Embodiment 10 | Cu0.75Si0.08Mo0.17Recording layer | 235℃ |
| Embodiment 11 | Cu0.75Si0.05Cr0.20Recording layer | 160℃ |
| Embodiment 12 | Cu0.74Si0.24Cr0.02Recording layer | 300℃ |
| Comparative example 2 | Copper/uncrystalline silicon double record layer | 500℃ |
| Comparative example 3 | Cu0.69Si0.28Cr0.03Recording layer | 330℃ |
As shown in Table 1, because the cupro silicon recording layer of embodiment 7 to 12 is via the copper with proper content, silicon
And the cupro silicon sputtered target material institute sputter of corrosion resistance element forms, therefore in the cupro silicon recording layer of embodiment 7 to 12
The content of copper, silicon and corrosion resistance element can be also controlled in appropriate scope, be derived from higher than 150 DEG C and less than 500
DEG C phase transition temperature.More specifically, the cupro silicon recording layer of embodiment 7 to 12 all turns with 150 DEG C to 300 DEG C of phase
Temperature.
Therefore, when the cupro silicon recording layer of embodiment 7 to 12 is applied to a single once-type Blu-ray Disc, due to copper
The phase transition temperature of silicon alloy recording layer is 150 DEG C to 300 DEG C, therefore such cupro silicon recording layer can be sent out within the shorter time
Raw phase in version, and carry out complete crystallization reaction；Therefore the mono-recordable of the cupro silicon recording layer containing embodiment 7 to 12
Burning can be carried out with 6X to 12X high speed replication rate by entering type Blu-ray Disc, and ensure data write-in work be able to it is suitable
Profit is carried out, and maintains its electrical equipment signal.
Especially, as the Cu of cupro silicon recording layeraSibMcThe a of alloy is 0.75, b 0.08, and when c is 0.17, i.e. it is real
Apply the cupro silicon recording layer of example 7 to 10, such cupro silicon recording layer because with 200 DEG C to 250 DEG C of phase transition temperature, therefore
Phase in version can occur within the shorter time for the cupro silicon recording layer of embodiment 7 to 10, and carry out complete crystallization reaction,
Therefore it more can be suitably used for the single once-type Blu-ray Disc of high power burning.
Copper/uncrystalline silicon double record layer of comparative example 2 is reviewed, because its phase transition temperature is up to 500 DEG C, when it is applied to
During one single once-type Blu-ray Disc, copper/uncrystalline silicon double record layer can not in short contacting time rapidly by non-crystalline
It is changed into crystalline state, thus the single once-type Blu-ray Disc of high power burning can not be applied to.
In addition, being confirmed via the measurement of embodiment 7 to 12 and the phase transition temperature of comparative example 3, cupro silicon is reduced
Silicone content in recording layer, can be advantageous to control phase transition temperature at 150 DEG C to 300 DEG C, avoid phase transition temperature too high without
The problem of complete crystallization reaction can not occur beneficial to single once-type Blu-ray Disc.
Test example 2：Modulation value
In this test example, the cupro silicon of embodiment 7 and comparative example 3 is first obtained using real-time reflectivity measurement equipment instrument
Real-time reflectivity intensity of the recording layer at a temperature of different heat treatment, its result are as shown in Figure 3.In this, the modulation value be via
Following mathematical expression is calculated and obtained：
Modulation value (%)=[(the real-time reflectivity intensity of highest-minimum real-time reflectivity intensity) real-time reflectivity of/highest is strong
Degree] × 100%
The modulation value of the cupro silicon recording layer of embodiment 7 shows Cu up to 60%0.75Si0.08Cr0.17Recording layer has met list
The modulation value specification (that is, more than 40%) of secondary write-in-type blue light CD.
Confirmed via experimental result, cupro silicon recording layer of the invention can substitute copper/uncrystalline silicon of prior art double
Recording layer and cupro silicon/uncrystalline silicon double record layer, are present in a manner of single-recordng-layer in single once-type Blu-ray Disc,
And comply with the modulation value specification of single once-type Blu-ray Disc, it is ensured that single once-type Blu-ray Disc possesses certain record
Quality.
Claims (11)
1. a kind of cupro silicon sputtered target material, it is by CuaSibMcAlloy forms, wherein, M be nickel, chromium, molybdenum or titanium, a for 0.55 to
0.93, b is that 0.05 to 0.25, c is 0.02 to 0.20, and a, b and c summation are 1.
2. cupro silicon sputtered target material as claimed in claim 1, wherein, b is 0.05 to 0.12.
3. cupro silicon sputtered target material as claimed in claim 2, wherein, c is 0.15 to 0.20.
4. cupro silicon sputtered target material as claimed in claim 3, wherein, a is 0.70 to 0.80.
5. a kind of cupro silicon recording layer, it is by CuaSibMcAlloy forms, wherein, M be nickel, chromium, molybdenum or titanium, a for 0.55 to
0.93, b is that 0.05 to 0.25, c is 0.02 to 0.20, and a, b and c summation are 1.
6. cupro silicon recording layer as claimed in claim 5, wherein, the phase transition temperature of the cupro silicon recording layer is
150 DEG C to 320 DEG C.
7. cupro silicon recording layer as claimed in claim 5, wherein, b is 0.05 to 0.12.
8. cupro silicon recording layer as claimed in claim 7, wherein, c is 0.15 to 0.20.
9. cupro silicon recording layer as claimed in claim 8, wherein, a is 0.70 to 0.80.
10. cupro silicon recording layer as claimed in claim 9, wherein, the phase transition temperature of the cupro silicon recording layer is
200 DEG C to 250 DEG C.
11. the cupro silicon recording layer as any one of claim 5 to 10, wherein, the cupro silicon recording layer
Thickness is 2 nanometers to 50 nanometers.
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