CN104575532A - Copper silicon alloy sputtering target material and copper silicon alloy recording layer - Google Patents
Copper silicon alloy sputtering target material and copper silicon alloy recording layer Download PDFInfo
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- CN104575532A CN104575532A CN201310498740.8A CN201310498740A CN104575532A CN 104575532 A CN104575532 A CN 104575532A CN 201310498740 A CN201310498740 A CN 201310498740A CN 104575532 A CN104575532 A CN 104575532A
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B7/2433—Metals or elements of groups 13, 14, 15 or 16 of the Periodic System, e.g. B, Si, Ge, As, Sb, Bi, Se or Te
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
- G11B7/266—Sputtering or spin-coating layers
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- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Manufacturing Optical Record Carriers (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
Abstract
The invention provides a copper silicon alloy sputtering target material and a copper silicon alloy recording layer. The copper silicon alloy sputtering target material and the copper silicon alloy recording layer both consist of CuaSibMc alloy, wherein M is nickel, chromium, molybdenum or titanium, a is 0.55-0.93, b is 0.05-0.25, c is 0.02-0.20, and the sum of a, b and c is 1. The copper silicon alloy recording layer contains copper, silicon, nickel, chromium, molybdenum or titanium with appropriate contents, so that a phase transition temperature is higher than 150 DEG C and is lower than 500 DEG C, and when being applied to optical recording media, the copper silicon alloy recording layer can obtain favorable recording quality, favorable stability and higher programming speed.
Description
Technical field
The present invention is about a kind of cupro silicon sputtered target material and cupro silicon recording layer, and espespecially a kind of cupro silicon sputtered target material and cupro silicon recording layer being applied to optical recording media, belongs to optical recording media technical field.
Background technology
Blu-ray Disc (Blu-ray Disc) uses wavelength to be the work that the blue laser light of 405 nanometers carries out reading and writing data, it is because possessing the advantage of high power capacity, therefore be widely used in storing the data of high power capacity and the video/audio archive of high image quality, become the ray Disc specifications of next generation.
The layer structure of general single once-type Blu-ray Disc sequentially comprises: substrate, reflection horizon, the first dielectric layer, double record layer, the second dielectric layer and protective seam.In single once-type Blu-ray Disc common at present, double record layer comprises copper/uncrystalline silicon double record layer and cupro silicon/uncrystalline silicon double record layer two kinds.
For the single once-type Blu-ray Disc containing copper/uncrystalline silicon double record layer, single once-type Blu-ray Disc is the phase in version mechanism (metal induced crystallization phase changemechanism) utilizing metal induced lattice, make uncrystalline silicon can under lower heat treatment temperature, crystallization is carried out through copper metal induced uncrystalline silicon, promote double record layer thus to the real-time reflectivity intensity (real-time reflectivity) of blue laser light, complete the work of data write.
But, copper/uncrystalline silicon double record layer is because having the phase transition temperature higher than more than 500 DEG C, cause the single once-type Blu-ray Disc containing this kind of double record layer within shorter duration of contact, phase in version cannot occur, if uncrystalline silicon cannot complete crystallization under certain heat treatment temperature, the burning performance of single once-type Blu-ray Disc will be affected, even its electrical equipment signal of deterioration.Therefore use this kind of single once-type Blu-ray Disc write power must be increased to more than 8 milliwatts, make copper/uncrystalline silicon double record layer surface produce higher temperature, phase in version could be carried out smoothly, complete the work of data write; But improve the burning cost that write power can increase single once-type Blu-ray Disc, and be not also suitable for the single once-type Blu-ray Disc of high speed burning.
Therefore, for solving the problem, the another kind of single once-type Blu-ray Disc containing cupro silicon/uncrystalline silicon double record layer of prior art exploitation, utilizes cupro silicon layer sputter on noncrystalline silicon layer, its easily and noncrystalline silicon layer react and produce copper silicon (Cu
3si) character of crystallization phase, makes cupro silicon/uncrystalline silicon double record layer be able to issue looks in lower heat treatment temperature and changes.But, because the phase transition temperature of cupro silicon/uncrystalline silicon double record layer is lower than 150 DEG C, copper metal is caused to be easy to spontaneous reaction and oxidation occur, and reduce the real-time reflectivity intensity of this kind of single once-type Blu-ray Disc, cause the problem that the single once-type Blu-ray Disc containing cupro silicon/uncrystalline silicon double record layer often has recording quality not good.
Summary of the invention
For solving the problems of the technologies described above, the object of the present invention is to provide a kind of cupro silicon sputtered target material and a kind of cupro silicon recording layer, namely a kind of cupro silicon material being applicable to optical recording media is provided, and then promotes recording quality and the replication rate of optical recording media.
For reaching above-mentioned purpose, the invention provides a kind of cupro silicon sputtered target material, it is by Cu
asi
bm
calloy forms, and wherein, M (corrosion resistivity element) is nickel, chromium, molybdenum or titanium, and a is 0.55 to 0.93, b be 0.05 to 0.25, c is 0.02 to 0.20, and the summation of a, b and c is 1.
Accordingly, because cupro silicon sputtered target material of the present invention has the copper of proper content, silicon and M, therefore this cupro silicon sputtered target material can be used in sputter forms the cupro silicon recording layer being applicable to optical recording media.
In above-mentioned cupro silicon sputtered target material, preferably, a is 0.70 to 0.80.
In above-mentioned cupro silicon sputtered target material, preferably, b is 0.05 to 0.12.
In above-mentioned cupro silicon sputtered target material, preferably, c is 0.15 to 0.20.
In above-mentioned cupro silicon sputtered target material, preferably, a is 0.70 to 0.80, b be 0.05 to 0.12, c is 0.15 to 0.20, and the summation of a, b and c is 1.
According to the specific embodiment of the present invention, preferably, the structure of above-mentioned cupro silicon sputtered target material is made up of a substrate phase and a Metal Phase, wherein, this substrate is primarily of cupro silicon composition, and this Metal Phase forms primarily of M, and described M is nickel, chromium, molybdenum or titanium.
Cupro silicon sputtered target material of the present invention can via obtained by powder metallurgic method or melting and casting method; Preferably, cupro silicon sputtered target material of the present invention is obtained by powder metallurgic method.
The present invention also provides a kind of cupro silicon recording layer, and it is by Cu
asi
bm
calloy forms, and wherein, M is nickel, chromium, molybdenum or titanium, and a is 0.55 to 0.93, b be 0.05 to 0.25, c is 0.02 to 0.20, and the summation of a, b and c is 1.
Accordingly, because cupro silicon recording layer of the present invention has the copper of proper content, silicon and nickel, chromium, molybdenum or titanium, therefore to have higher than 150 DEG C and lower than the phase transition temperature of 500 DEG C.
In above-mentioned cupro silicon recording layer, preferably, a is 0.70 to 0.80.
In above-mentioned cupro silicon recording layer, preferably, b is 0.05 to 0.12.
In above-mentioned cupro silicon recording layer, preferably, c is 0.15 to 0.20.
In above-mentioned cupro silicon recording layer, preferably, a is 0.70 to 0.80, b be 0.05 to 0.12, c is 0.15 to 0.20, and the summation of a, b and c is 1.
According to the specific embodiment of the present invention, preferably, the phase transition temperature of above-mentioned cupro silicon recording layer is 150 DEG C to 320 DEG C.More preferably, the phase transition temperature of above-mentioned cupro silicon recording layer is 200 DEG C to 250 DEG C.Accordingly, the optical recording media comprising this cupro silicon recording layer can possess higher modulation value (modulation).
According to the specific embodiment of the present invention, preferably, the thickness of above-mentioned cupro silicon recording layer is 2 nanometer to 50 nanometers.
In the present invention, this cupro silicon recording layer is formed by above-mentioned cupro silicon sputtered target material institute sputter.
The present invention also provides a kind of single once-type Blu-ray Disc, and it comprises above-mentioned cupro silicon recording layer.
Cupro silicon recording layer of the present invention is applied in optical recording media can possess following advantages:
(1), suitable phase transition temperature range:
By regulating and controlling the copper of proper content, silicon and corrosion resistivity element, and suitably reduce the silicone content in cupro silicon recording layer, therefore cupro silicon recording layer of the present invention can possess higher than 150 DEG C and lower than the phase transition temperature of 500 DEG C.
(2), preferably recording quality:
Cupro silicon recording layer of the present invention can replace copper/uncrystalline silicon double record layer and the cupro silicon/uncrystalline silicon double record layer of prior art, be present in optical recording media in the mode of single-recordng-layer, make the optical recording media comprising it have higher modulation value and correlative value, and then promote the recording quality of optical recording media.
(3), stability is high:
Cupro silicon recording layer of the present invention because to have higher than 150 DEG C and lower than the phase transition temperature of 500 DEG C, therefore can avoid copper metal generation spontaneous reaction and oxidation, and then promotes the stability of cupro silicon recording layer.
Further, when cupro silicon recording layer of the present invention has the phase transition temperature of 150 DEG C to 340 DEG C, this cupro silicon recording layer is applied in optical recording media more can possess following advantages:
(1), burning cost is low:
Only need the write power (that is, lower heat treatment temperature) of 4 to 6 milliwatts, just can guarantee cupro silicon recording layer generation phase in version, therefore effectively can reduce the burning cost of optical recording media.
(2) optical recording media of high speed burning, is applicable to:
Compared to copper/uncrystalline silicon double record layer and the cupro silicon/uncrystalline silicon double record layer of prior art, this cupro silicon recording layer is present in optical recording media in the mode of single-recordng-layer, and there is the phase transition temperature of 150 DEG C to 320 DEG C, therefore phase in version can be there is within shorter duration of contact, the replication rate promoting optical recording media reaches 6X (216Mbit/s) to 12X (512Mbit/s).
Accompanying drawing explanation
Fig. 1 is the sweep electron microscope striograph of the cupro silicon sputtered target material of embodiment 1.
Fig. 2 is the sweep electron microscope striograph of the cupro silicon sputtered target material of comparative example 1.
Fig. 3 is the real-time reflectivity intensity result figure of cupro silicon recording layer at different heat treatment temperature of embodiment 7 and comparative example 3.
Primary clustering symbol description:
The light gray form and aspect A ' of the light gray form and aspect A comparative example 1 of embodiment 1
First dark-grey form and aspect B ' of the dark-grey form and aspect B comparative example 1 of embodiment 1
Second dark-grey form and aspect C ' of comparative example 1
Embodiment
Below, by following specific embodiment, embodiments of the present invention will be described, those skilled in the art can understand via the content of this instructions the advantage and effect that the present invention can reach easily, and under not departing from spirit of the present invention, carry out various modification and change, to implement or to apply content of the present invention.
Prepare cupro silicon sputtered target material
Embodiment 1:Cu
0.75si
0.08cr
0.17alloy sputtered target material
By the copper powder of 1195.76 grams, the silica flour of 56.37 grams, the chromium powder Homogeneous phase mixing of 221.78 grams, under the pressure of the temperature of 600 DEG C to 800 DEG C and 500 bar (bar), continue hot pressing 3 hours, obtained Cu
0.75si
0.08cr
0.17alloy sputtered target material.
In obtained cupro silicon sputtered target material, copper accounts for global copper silicon alloy sputtered target material about 75 atomic percent; Silicon accounts for global copper silicon alloy sputtered target material about 8 atomic percent; Chromium accounts for global copper silicon alloy sputtered target material about 17 atomic percent.
Refer to shown in Fig. 1, this Cu
0.75si
0.08cr
0.17the sweep electron microscope striograph of alloy sputtered target material; In Fig. 1, the light gray form and aspect A (substrate phase) of embodiment 1 is CuSi alloy; The dark-grey form and aspect B (Metal Phase) of embodiment 1 is chromium Metal Phase.
Embodiment 2:Cu
0.75si
0.08ni
0.17alloy sputtered target material
By the copper powder of 1213.20 grams, the silica flour of 57.20 grams, the nickel powder Homogeneous phase mixing of 254.06 grams, under the pressure of the temperature of 600 DEG C to 800 DEG C and 500bar, continue hot pressing 3 hours, obtained Cu
0.75si
0.08ni
0.17alloy sputtered target material.
In obtained cupro silicon sputtered target material, copper accounts for global copper silicon alloy sputtered target material about 75 atomic percent; Silicon accounts for global copper silicon alloy sputtered target material about 8 atomic percent; Nickel accounts for global copper silicon alloy sputtered target material about 17 atomic percent.
Embodiment 3:Cu
0.75si
0.08ti
0.17alloy sputtered target material
By the copper powder of 1110.59 grams, the silica flour of 52.36 grams, the titanium valve Homogeneous phase mixing of 189.75 grams, under the pressure of the temperature of 600 DEG C to 800 DEG C and 500bar, continue hot pressing 3 hours, obtained Cu
0.75si
0.08ti
0.17alloy sputtered target material.
In obtained cupro silicon sputtered target material, copper accounts for global copper silicon alloy sputtered target material about 75 atomic percent; Silicon accounts for global copper silicon alloy sputtered target material about 8 atomic percent; Titanium accounts for global copper silicon alloy sputtered target material about 17 atomic percent.
Embodiment 4:Cu
0.75si
0.08mo
0.17alloy sputtered target material
By the copper powder of 955.77 grams, the silica flour of 181.04 grams, the molybdenum powder Homogeneous phase mixing of 42.07 grams, under the pressure of the temperature of 600 DEG C to 800 DEG C and 500bar, continue hot pressing 3 hours, obtained Cu
0.75si
0.08mo
0.17alloy sputtered target material.
In obtained cupro silicon sputtered target material, copper accounts for global copper silicon alloy sputtered target material about 75 atomic percent; Silicon accounts for global copper silicon alloy sputtered target material about 8 atomic percent; Molybdenum accounts for global copper silicon alloy sputtered target material about 17 atomic percent.
Embodiment 5:Cu
0.75si
0.05cr
0.20alloy sputtered target material
By the copper powder of 960.63 grams, the silica flour of 181.96 grams, the chromium powder Homogeneous phase mixing of 22.92 grams, under the pressure of the temperature of 600 DEG C to 800 DEG C and 500bar, continue hot pressing 3 hours, obtained Cu
0.75si
0.05cr
0.20alloy sputtered target material.
In obtained cupro silicon sputtered target material, copper accounts for global copper silicon alloy sputtered target material about 75 atomic percent; Silicon accounts for global copper silicon alloy sputtered target material about 5 atomic percent; Chromium accounts for global copper silicon alloy sputtered target material about 20 atomic percent.
Embodiment 6:Cu
0.74si
0.24cr
0.02alloy sputtered target material
By the copper powder of 1069.76 grams, the silica flour of 153.34 grams, the chromium powder Homogeneous phase mixing of 23.66 grams, under the pressure of the temperature of 600 DEG C to 800 DEG C and 500bar, continue hot pressing 3 hours, obtained Cu
0.74si
0.24cr
0.02alloy sputtered target material.
In obtained cupro silicon sputtered target material, copper accounts for global copper silicon alloy sputtered target material about 74 atomic percent; Silicon accounts for global copper silicon alloy sputtered target material about 24 atomic percent; Chromium accounts for global copper silicon alloy sputtered target material about 2 atomic percent.
Comparative example 1:Cu
0.69si
0.28cr
0.03alloy sputtered target material
By the copper powder of 973.98 grams, the silica flour of 174.69 grams, the chromium powder Homogeneous phase mixing of 34.65 grams, under the pressure of the temperature of 600 DEG C to 800 DEG C and 500bar, continue hot pressing 3 hours, obtained Cu
0.69si
0.28cr
0.03alloy sputtered target material.
In obtained cupro silicon sputtered target material, copper accounts for global copper silicon alloy sputtered target material about 69 atomic percent; Silicon accounts for global copper silicon alloy sputtered target material about 28 atomic percent; Chromium accounts for global copper silicon alloy sputtered target material about 3 atomic percent.
Refer to shown in Fig. 2, it is Cu
0.69si
0.28cr
0.03the sweep electron microscope striograph of alloy sputtered target material; In Fig. 2, the light gray form and aspect A ' of comparative example 1 is Cu
0.69si
0.28cr
0.03the substrate phase of alloy sputtered target material, it forms primarily of cupro silicon; And first of comparative example 1 the dark-grey form and aspect B ' is Cu with the second dark-grey form and aspect C ' of comparative example 1
0.69si
0.28cr
0.03the Compound Phase of alloy sputtered target material, it is primarily of silicochromium and silicon composition.
Compared to the sweep electron microscope striograph of embodiment 1, due to the Cu of this comparative example 1
0.69si
0.28cr
0.03the silicone content of alloy sputtered target material is higher, therefore the light gray form and aspect A ' of comparative example 1 (substrate phase) is mainly cupro silicon, and first of comparative example 1 the dark-grey form and aspect B ' is then respectively the composition such as silicochromium and silicon with the second dark-grey form and aspect C ' (Compound Phase) of comparative example 1.
Prepare the cupro silicon recording layer of single once-type Blu-ray Disc
Embodiment 7:Cu
0.75si
0.08cr
0.17recording layer
The present embodiment uses the Cu obtained by embodiment 1
0.75si
0.08cr
0.17alloy sputtered target material, then via DC sputtering method, in the vacuum cavity of pressure about 3 millitorr (mtorr), on the dielectric layer of single once-type Blu-ray Disc, sputter forms the Cu of a thickness about 50 nanometer
0.75si
0.08cr
0.17recording layer.
Embodiment 8:Cu
0.75si
0.08ni
0.17recording layer
The present embodiment uses the Cu obtained by embodiment 2
0.75si
0.08ni
0.17alloy sputtered target material, and haply via the Cu forming a thickness about 50 nanometer as the method sputter described in embodiment 7
0.75si
0.08ni
0.17recording layer.
Embodiment 9:Cu
0.75si
0.08ti
0.17recording layer
The present embodiment uses the Cu obtained by embodiment 3
0.75si
0.08ti
0.17alloy sputtered target material, and haply via the Cu forming a thickness about 50 nanometer as the method sputter described in embodiment 7
0.75si
0.08ti
0.17recording layer.
Embodiment 10:Cu
0.75si
0.08mo
0.17recording layer
The present embodiment uses the Cu obtained by embodiment 4
0.75si
0.08mo
0.17alloy sputtered target material, and haply via the Cu forming a thickness about 50 nanometer as the method sputter described in embodiment 7
0.75si
0.08mo
0.17recording layer.
Embodiment 11:Cu
0.75si
0.05cr
0.20recording layer
The present embodiment uses the Cu obtained by embodiment 5
0.75si
0.05cr
0.20alloy sputtered target material, and haply via the Cu forming a thickness about 50 nanometer as the method sputter described in embodiment 7
0.75si
0.05cr
0.20recording layer.
Embodiment 12:Cu
0.74si
0.24cr
0.02recording layer
The present embodiment uses the Cu obtained by embodiment 6
0.74si
0.24cr
0.02alloy sputtered target material, and haply via the Cu forming a thickness about 50 nanometer as the method sputter described in embodiment 7
0.74si
0.24cr
0.02recording layer.
Comparative example 2: copper/uncrystalline silicon double record layer
This comparative example uses fine copper sputtered target material, and with DC sputtering method, be about in the vacuum cavity of 3mtorr in pressure, on the dielectric layer of single once-type Blu-ray Disc, first sputter forms the copper recording layer that a thickness is about 2-50 nanometer; Then, re-use uncrystalline silicon sputtered target material, with DC sputtering method, on this copper recording layer, form the noncrystalline silicon layer of a thickness about 50 nanometer.
Accordingly, the recording layer of this comparative example is copper/uncrystalline silicon double record layer.
Comparative example 3:Cu
0.69si
0.28cr
0.03recording layer
This comparative example uses the Cu obtained by comparative example 1
0.69si
0.28cr
0.03alloy sputtered target material, and haply via the Cu forming a thickness about 50 nanometer as the method sputter described in embodiment 7
0.69si
0.28cr
0.03recording layer.
The characteristic test of recording layer
Test example 1: phase transition temperature
In this test example, use real-time reflectivity measurement equipment instrument, respectively with the heating rate of raising per minute 100 DEG C, obtain the real-time reflectivity intensity of the cupro silicon recording layer of the cupro silicon recording layer of embodiment 7 to 12, the copper/uncrystalline silicon double record layer of comparative example 2 and comparative example 3 to the curve map (as shown in Figure 3) of heat treatment temperature; Again via the curve map analyzing each sample, with its maximum slope (utilizing mathematic integral to calculate) for phase transition temperature, the measurement of each sample is as shown in table 1 below.
Table 1: the phase transition temperature measurement of the recording layer of embodiment 7 to 12 and comparative example 2 and 3.
| Numbering | Recording layer | Phase transition temperature |
| Embodiment 7 | Cu 0.75Si 0.08Cr 0.17Recording layer | 205℃ |
| Embodiment 8 | Cu 0.75Si 0.08Ni 0.17Recording layer | 220℃ |
| Embodiment 9 | Cu 0.75Si 0.08Ti 0.17Recording layer | 230℃ |
| Embodiment 10 | Cu 0.75Si 0.08Mo 0.17Recording layer | 235℃ |
| Embodiment 11 | Cu 0.75Si 0.05Cr 0.20Recording layer | 160℃ |
| Embodiment 12 | Cu 0.74Si 0.24Cr 0.02Recording layer | 300℃ |
| Comparative example 2 | Copper/uncrystalline silicon double record layer | 500℃ |
| Comparative example 3 | Cu 0.69Si 0.28Cr 0.03Recording layer | 330℃ |
As shown in Table 1, cupro silicon recording layer due to embodiment 7 to 12 forms via the cupro silicon sputtered target material institute sputter of the copper with proper content, silicon and corrosion resistivity element, therefore the content of copper, silicon and corrosion resistivity element in the cupro silicon recording layer of embodiment 7 to 12 also can be controlled in suitable scope, to obtain thus higher than 150 DEG C and lower than the phase transition temperature of 500 DEG C.More specifically, the cupro silicon recording layer of embodiment 7 to 12 all has the phase transition temperature of 150 DEG C to 300 DEG C.
Therefore, when the cupro silicon recording layer of embodiment 7 to 12 is applied to a single once-type Blu-ray Disc, phase transition temperature due to cupro silicon recording layer is 150 DEG C to 300 DEG C, therefore such cupro silicon recording layer within the shorter time, phase in version can occur, and carries out crystallization reaction completely; Therefore the single once-type Blu-ray Disc containing the cupro silicon recording layer of embodiment 7 to 12 can carry out burning with the high speed replication rate of 6X to 12X, and guarantee that the work that data write is smooth, maintain its electrical equipment signal.
Especially, as the Cu of cupro silicon recording layer
asi
bm
cthe a of alloy is 0.75, b is 0.08, and c is when being 0.17, namely, the cupro silicon recording layer of embodiment 7 to 10, the phase transition temperature of such cupro silicon recording layer because having 200 DEG C to 250 DEG C, therefore phase in version can be there is within the shorter time in the cupro silicon recording layer of embodiment 7 to 10, and carry out crystallization reaction completely, therefore more can be applicable to the single once-type Blu-ray Disc of high power burning.
Review the copper/uncrystalline silicon double record layer of comparative example 2, because its phase transition temperature is up to 500 DEG C, when it is applied to a single once-type Blu-ray Disc, copper/uncrystalline silicon double record layer cannot change crystalline state into by non-crystalline rapidly in short contacting time, thus cannot be applicable to the single once-type Blu-ray Disc of high power burning.
In addition, confirm via the measurement of embodiment 7 to 12 with the phase transition temperature of comparative example 3, reduce the silicone content in cupro silicon recording layer, can be conducive to controlling phase transition temperature at 150 DEG C to 300 DEG C, avoid phase transition temperature too high and be unfavorable for that the problem of crystallization reaction completely cannot occur single once-type Blu-ray Disc.
Test example 2: modulation value
In this test example, first use real-time reflectivity measurement equipment instrument to obtain the real-time reflectivity intensity of cupro silicon recording layer at different heat treatment temperature of embodiment 7 and comparative example 3, its result as shown in Figure 3.In this, this modulation value calculates via following mathematical expression and obtains:
Modulation value (%)=[(the highest real-time reflectivity intensity-minimum real-time reflectivity intensity)/the highest real-time reflectivity intensity] × 100%
The modulation value of the cupro silicon recording layer of embodiment 7 reaches 60%, display Cu
0.75si
0.08cr
0.17recording layer has met the modulation value specification (that is, more than 40%) of single once-type Blu-ray Disc.
Confirm via experimental result, cupro silicon recording layer of the present invention can replace copper/uncrystalline silicon double record layer and the cupro silicon/uncrystalline silicon double record layer of prior art, be present in single once-type Blu-ray Disc in the mode of single-recordng-layer, and make it meet the modulation value specification of single once-type Blu-ray Disc, guarantee that single once-type Blu-ray Disc possesses certain recording quality.
Claims (11)
1. a cupro silicon sputtered target material, it is by Cu
asi
bm
calloy forms, and wherein, M is nickel, chromium, molybdenum or titanium, and a is 0.55 to 0.93, b be 0.05 to 0.25, c is 0.02 to 0.20, and the summation of a, b and c is 1.
2. cupro silicon sputtered target material as claimed in claim 1, wherein, b is 0.05 to 0.12.
3. cupro silicon sputtered target material as claimed in claim 2, wherein, c is 0.15 to 0.20.
4. cupro silicon sputtered target material as claimed in claim 3, wherein, a is 0.70 to 0.80.
5. a cupro silicon recording layer, it is by Cu
asi
bm
calloy forms, and wherein, M is nickel, chromium, molybdenum or titanium, and a is 0.55 to 0.93, b be 0.05 to 0.25, c is 0.02 to 0.20, and the summation of a, b and c is 1.
6. cupro silicon recording layer as claimed in claim 5, wherein, the phase transition temperature of described cupro silicon recording layer is 150 DEG C to 320 DEG C.
7. cupro silicon recording layer as claimed in claim 5, wherein, b is 0.05 to 0.12.
8. cupro silicon recording layer as claimed in claim 7, wherein, c is 0.15 to 0.20.
9. cupro silicon recording layer as claimed in claim 8, wherein, a is 0.70 to 0.80.
10. cupro silicon recording layer as claimed in claim 9, wherein, the phase transition temperature of described cupro silicon recording layer is 200 DEG C to 250 DEG C.
11. cupro silicon recording layers according to any one of claim 5 to 10, wherein, the thickness of described cupro silicon recording layer is 2 nanometer to 50 nanometers.
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| CN108281159A (en) * | 2017-12-28 | 2018-07-13 | 广东紫晶信息存储技术股份有限公司 | A kind of long-acting optical data memory alloy material and preparation method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101736289A (en) * | 2008-11-04 | 2010-06-16 | 光洋应用材料科技股份有限公司 | Copper alloy target, manufacturing method thereof and film and solar cell manufactured by same |
| US20100279054A1 (en) * | 2009-04-29 | 2010-11-04 | Han-Feng Chang | Recordable optical recording media |
| US20110235491A1 (en) * | 2010-03-25 | 2011-09-29 | Shuji Tsukamoto | Optical recording medium and optical recording method |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101736289A (en) * | 2008-11-04 | 2010-06-16 | 光洋应用材料科技股份有限公司 | Copper alloy target, manufacturing method thereof and film and solar cell manufactured by same |
| US20100279054A1 (en) * | 2009-04-29 | 2010-11-04 | Han-Feng Chang | Recordable optical recording media |
| US20110235491A1 (en) * | 2010-03-25 | 2011-09-29 | Shuji Tsukamoto | Optical recording medium and optical recording method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108281159A (en) * | 2017-12-28 | 2018-07-13 | 广东紫晶信息存储技术股份有限公司 | A kind of long-acting optical data memory alloy material and preparation method |
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