CN104571764A - Small-etching-mark capacitive touch screen structure and manufacturing method thereof - Google Patents

Small-etching-mark capacitive touch screen structure and manufacturing method thereof Download PDF

Info

Publication number
CN104571764A
CN104571764A CN201510004131.1A CN201510004131A CN104571764A CN 104571764 A CN104571764 A CN 104571764A CN 201510004131 A CN201510004131 A CN 201510004131A CN 104571764 A CN104571764 A CN 104571764A
Authority
CN
China
Prior art keywords
layer
conductive
touch screen
capacitive touch
screen structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201510004131.1A
Other languages
Chinese (zh)
Inventor
黄永振
沈效龙
张国强
杨忙
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shandong Hua Xinfuchuan Electronic Science And Technology Co Ltd
Original Assignee
Shandong Hua Xinfuchuan Electronic Science And Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shandong Hua Xinfuchuan Electronic Science And Technology Co Ltd filed Critical Shandong Hua Xinfuchuan Electronic Science And Technology Co Ltd
Priority to CN201510004131.1A priority Critical patent/CN104571764A/en
Publication of CN104571764A publication Critical patent/CN104571764A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Position Input By Displaying (AREA)

Abstract

The invention aims at providing a small-etching-mark capacitive touch screen structure and a manufacturing method thereof. The small-etching-mark capacitive touch screen structure is high in yield, low in device requirement and good in disapparation effect. The capacitive touch screen structure comprises a base plate, a shielding layer which is arranged on the first surface of the base plate and corresponding to a side frame area, a first disapparation layer which is formed on a shielding layer and the first exposed surface of the base plate, a first conductive layer formed on the first disapparation layer, an insulation layer formed on the first conductive layer, a second conductive layer formed on the second disapparation layer, and a second disapparation layer formed on the second conductive layer; the first conductive layer comprises a plurality of first conductive electrodes which are arranged at intervals and parallel to the first direction and can be connected with the circuit board; the second conductive layer comprises a plurality of second conductive electrodes which are arranged at intervals and parallel to the second direction and can be connected with the circuit board.

Description

There is capacitive touch screen structure of low etched mark and preparation method thereof
Technical field
The present invention relates to touch-screen, be specifically related to a kind of to there is capacitive touch screen structure of low etched mark and preparation method thereof.
Background technology
Along with the development of electronic technology and infotech, electronic installation use is in daily life also in continuous increase.Touch-screen receives publicity as the input mode being suitable for portable set.
In prior art, the touch-screen of single layer of conductive Rotating fields is generally form the opaque line floor with x-ray road and the arrangement of Y line segregation by etching simultaneously on single conductive layer, and then utilize bridge process, make opaque line floor all x-ray road, all Y circuits link into an integrated entity structure respectively, then be connected the basic function be energized to realize touch-screen with flexible PCB.Because needs print two kinds of electrodes on same layer conducting film, add the small volume of film, to equipment and processing technology accuracy requirement high, equipment cost is high, and working (machining) efficiency is low, and obtained product defect rate is high.
It is high that the touch-screen of current bilayer conductive film has product percent of pass, to advantages such as the requirement of equipment are low, but shortcoming to be etched mark comparatively obvious, the effect of impact display and outward appearance, especially at mobile phone, on panel computer and common computer, can have a strong impact on visual effect.
Prior art is compared, and the present invention to be disappeared shadow layer by the employing first shadow layer and second that disappears, and the first conductive layer and the second conductive layer and etching region aberration can be made to reduce, alleviate capacitive touch screen " etched mark " phenomenon, improve the visuality of touch-screen.
Summary of the invention
The object of the invention is to provide a kind ofly has capacitive touch screen structure of low etched mark and preparation method thereof, and product percent of pass is high, low and the shadow that disappears is effective to the requirement of equipment.
To achieve these goals, the present invention adopts technical scheme as follows:,
Have a capacitive touch screen structure for low etched mark, it comprises:
Substrate, has visible area and is centered around the rim area around visible area, comprises the first surface and second that are oppositely arranged;
Shielding layer, is arranged at above substrate first surface and also corresponds to rim area, in order to cover the light that display device is launched;
First disappears shadow layer, is formed on the substrate first surface of shielding layer and exposure;
First conductive layer, is formed at described first and disappears on shadow layer, comprises multiplely being parallel to first direction and spaced first conductive electrode that can be connected with circuit board;
Insulation course, is formed on the first conductive layer;
Second conductive layer, is formed at described second and disappears on shadow layer, comprises multiplely being parallel to second direction and spaced second conductive electrode that can be connected with circuit board; With
Second disappears shadow layer, is formed on the second conductive layer;
First direction conductive pattern and second direction conductive pattern are all formed at the same surface of base material, and the first conductive electrode and the second conductive electrode are by the spaced formation induction structure of insulation course.
Preferably, substrate is clear glass or polyethylene terephthalate to above-mentioned capacitive touch screen structure.
Preferably, the first shadow layer that disappears comprises and is successively set on a TiO2 or Nb2O5 layer on substrate first surface and a SiO2 layer from bottom to top above-mentioned capacitive touch screen structure.
Preferably, a TiO2 or Nb2O5 layer thickness is 3-30nm to above-mentioned capacitive touch screen structure, and the thickness of a SiO2 layer is 10-70nm.
Preferably, the second shadow layer that disappears comprises and is successively set on the 2nd SiO2 layer above insulation course and the 2nd TiO2 or Nb2O5 layer from bottom to top above-mentioned capacitive touch screen structure.
Preferably, the thickness of the 2nd SiO2 layer is 10-70nm to above-mentioned capacitive touch screen structure, and the 2nd TiO2 or Nb2O5 layer thickness is 3-30nm.
Above-mentioned capacitive touch screen structure preferably, make by transparent conductive oxide or conductive metal material by the first conductive layer and the second conductive layer, and conductive oxide is ITO(tin indium oxide) or AZO(aluminum zinc oxide), conductive metal material is nano silver wire.
Above-mentioned capacitive touch screen structure preferably, insulation course is made up of macromolecular material or Inorganic Non-metallic Materials, macromolecular material is polymethylmethacrylate (PMMA), polyethersulfone (PES), polyethylene terephthalate (PET), polycarbonate (PC) or benzocyclobutene (BCB), Inorganic Non-metallic Materials is silicon dioxide (SiO2).
Preferably, shielding layer has and covers pattern above-mentioned capacitive touch screen structure, covers the substrate of pattern in order to expose corresponding to this, correspondingly, first disappear shadow layer also via described pattern covers of covering on substrate.
A method for making for described capacitive touch screen structure, comprises the following steps:
1) light that stacked shielding layer is launched in order to cover display device on the first surface of substrate;
2) to disappear shadow layer in the substrate first surface stacked first of shielding layer and exposure;
3) to disappear stacked first conductive layer on shadow layer in first, comprise and be multiplely parallel to first direction and spaced first conductive electrode that can be connected with circuit board;
4) stacked insulation course on the first conductive layer;
5) stacked second conductive layer on insulation course, comprises and is multiplely parallel to second direction and spaced second conductive electrode that can be connected with circuit board;
6) stacked second to disappear shadow layer on the second conductive layer.
Beneficial effect of the present invention:
Accompanying drawing explanation
Fig. 1 is capacitive touch screen cross-sectional schematic of the present invention.
Fig. 2 is capacitive touch screen schematic top plan view of the present invention.
101. substrates in figure, 102. shielding layers, 103. first disappear shadow layer, 104. first conductive layers, 105. insulation courses, 106. second conductive layers, and 107. second disappear shadow layer, a. rim area, b. visible area.
Embodiment
Below coordinate Figure of description to do more detailed description to embodiments of the present invention, can implement according to this after studying this explanation carefully to make those skilled in the art person.
There is a capacitive touch screen structure for low etched mark, comprise substrate 101, shielding layer 102, first disappears shadow layer 103, first conductive layer 104, insulation course 105, second conductive layer 106 and second disappears shadow layer 1 07.
Substrate 101 has visible area b and is centered around the rim area a around the b of visible area, comprises the first surface and second that are oppositely arranged; Shielding layer 102 is arranged at above substrate 101 first surface and also corresponds to rim area a, in order to cover the light that display device is launched; The first shadow layer 103 that disappears is formed on shielding layer 102 and substrate 101 first surface that exposes; First conductive layer 104 is formed at described first and disappears on shadow layer 103, comprises multiplely being parallel to first direction and the spaced first conductive electrode (not shown) that can be connected with circuit board; Insulation course 105 is formed on the first conductive layer 104; Second conductive layer 106 is formed at described second and disappears on shadow layer 107, comprises multiplely being parallel to second direction and the spaced second conductive electrode (not shown) that can be connected with circuit board; Second disappears shadow layer 107, is formed on the second conductive layer 106; First direction conductive pattern and second direction conductive pattern are all formed at the same surface of base material, and the first conductive electrode and the second conductive electrode are by the spaced formation induction structure of insulation course 105.
In the present embodiment, substrate 101 is clear glass or polyethylene terephthalate.
In the present embodiment, the first shadow layer 103 that disappears comprises and is successively set on a TiO2 or Nb2O5 layer on substrate 101 first surface and a SiO2 layer from bottom to top, a TiO2 or Nb2O5 layer thickness is 3-30nm, and the thickness of a SiO2 layer is 10-70nm.
In the present embodiment, the second shadow layer 107 that disappears comprises and is successively set on the 2nd SiO2 layer above insulation course 105 and the 2nd TiO2 or Nb2O5 layer from bottom to top, and the thickness of two SiO2 layers is 10-70nm, and the 2nd TiO2 or Nb2O5 layer thickness is 3-30nm.
In the present embodiment, the first conductive layer 104 and the second conductive layer 106 are made by transparent conductive oxide or conductive metal material, and conductive oxide is ITO(tin indium oxide) or AZO(aluminum zinc oxide), conductive metal material is nano silver wire.
In the present embodiment, insulation course 105 is made up of macromolecular material or Inorganic Non-metallic Materials, macromolecular material is polymethylmethacrylate (PMMA), polyethersulfone (PES), polyethylene terephthalate (PET), polycarbonate (PC) or benzocyclobutene (BCB), Inorganic Non-metallic Materials is silicon dioxide (SiO2).
In the present embodiment, shielding layer 102 has and covers pattern, covers the substrate 101 of pattern in order to expose corresponding to this, correspondingly, first disappear shadow layer 103 also via described pattern covers of covering on substrate 101.
A method for making for described capacitive touch screen structure, comprises the following steps:
1) stacked shielding layer 102 on the first surface of substrate 101, to cover the light that display device is launched, shielding layer 102 has and covers pattern, covers the substrate 101 of pattern in order to expose corresponding to this;
2) to disappear shadow layer 103 in shielding layer 102 and substrate 101 first surface stacked first that exposes, correspondingly, first disappears shadow layer 103 also via covering pattern covers on substrate 101;
3) to disappear stacked first conductive layer 104 on shadow layer 103 in first, comprise and be multiplely parallel to first direction and spaced first conductive electrode that can be connected with circuit board;
4) stacked insulation course 105 on the first conductive layer 104;
5) stacked second conductive layer 106 on insulation course 105, comprises and is multiplely parallel to second direction and spaced second conductive electrode that can be connected with circuit board;
6) stacked second to disappear shadow layer 107 on the second conductive layer 106.
The present invention, in the accuracy requirement of reduction equipment and process, is conducive to reducing equipment cost, when obtained product percent of pass is high, adds the shadow effect that disappears to capacitance touch screen two-layer electrode.
Above only describes ultimate principle of the present invention and preferred implementation, those skilled in the art can make many changes and improvements according to foregoing description, and these changes and improvements should belong to protection scope of the present invention.

Claims (10)

1. there is a capacitive touch screen structure for low etched mark, it is characterized in that, comprising:
Substrate, has visible area and is centered around the rim area around visible area, comprises the first surface and second that are oppositely arranged;
Shielding layer, is arranged at above substrate first surface and also corresponds to rim area, in order to cover the light that display device is launched;
First disappears shadow layer, is formed on the substrate first surface of shielding layer and exposure;
First conductive layer, is formed at described first and disappears on shadow layer, comprises multiplely being parallel to first direction and spaced first conductive electrode that can be connected with circuit board;
Insulation course, is formed on the first conductive layer;
Second conductive layer, is formed at described second and disappears on shadow layer, comprises multiplely being parallel to second direction and spaced second conductive electrode that can be connected with circuit board; With
Second disappears shadow layer, is formed on the second conductive layer;
First direction conductive pattern and second direction conductive pattern are all formed at the same surface of base material, and the first conductive electrode and the second conductive electrode are by the spaced formation induction structure of insulation course.
2. capacitive touch screen structure according to claim 1, is characterized in that: substrate is clear glass or polyethylene terephthalate.
3. capacitive touch screen structure according to claim 1, is characterized in that: the first shadow layer that disappears comprises and is successively set on a TiO2 or Nb2O5 layer on substrate first surface and a SiO2 layer from bottom to top.
4. capacitive touch screen structure according to claim 3, is characterized in that: a TiO2 or Nb2O5 layer thickness is 3-30nm, and the thickness of a SiO2 layer is 10-70nm.
5. capacitive touch screen structure according to claim 1, is characterized in that: the second shadow layer that disappears comprises and is successively set on the 2nd SiO2 layer above insulation course and the 2nd TiO2 or Nb2O5 layer from bottom to top.
6. capacitive touch screen structure according to claim 5, is characterized in that: the thickness of the 2nd SiO2 layer is 10-70nm, and the 2nd TiO2 or Nb2O5 layer thickness is 3-30nm.
7. capacitive touch screen structure according to claim 1, it is characterized in that: the first conductive layer and the second conductive layer are made by transparent conductive oxide or conductive metal material, conductive oxide is tin indium oxide or aluminum zinc oxide, and conductive metal material is nano silver wire.
8. capacitive touch screen structure according to claim 1, it is characterized in that: insulation course is made up of macromolecular material or Inorganic Non-metallic Materials, macromolecular material is polymethylmethacrylate, polyethersulfone, polyethylene terephthalate, polycarbonate or benzocyclobutene, Inorganic Non-metallic Materials is silicon dioxide.
9. the capacitive touch screen structure according to any one of claim 1 to 8, it is characterized in that: shielding layer has and covers pattern, cover the substrate of pattern in order to expose corresponding to this, correspondingly, first disappear shadow layer also via described pattern covers of covering on substrate.
10. a method for making for the capacitive touch screen structure described in any one of claim 1 to 8, is characterized in that, comprises the following steps:
1) light that stacked shielding layer is launched in order to cover display device on the first surface of substrate;
2) to disappear shadow layer in the substrate first surface stacked first of shielding layer and exposure;
3) to disappear stacked first conductive layer on shadow layer in first, comprise and be multiplely parallel to first direction and spaced first conductive electrode that can be connected with circuit board;
4) stacked insulation course on the first conductive layer;
5) stacked second conductive layer on insulation course, comprises and is multiplely parallel to second direction and spaced second conductive electrode that can be connected with circuit board;
6) stacked second to disappear shadow layer on the second conductive layer.
CN201510004131.1A 2015-01-06 2015-01-06 Small-etching-mark capacitive touch screen structure and manufacturing method thereof Pending CN104571764A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510004131.1A CN104571764A (en) 2015-01-06 2015-01-06 Small-etching-mark capacitive touch screen structure and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510004131.1A CN104571764A (en) 2015-01-06 2015-01-06 Small-etching-mark capacitive touch screen structure and manufacturing method thereof

Publications (1)

Publication Number Publication Date
CN104571764A true CN104571764A (en) 2015-04-29

Family

ID=53087988

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510004131.1A Pending CN104571764A (en) 2015-01-06 2015-01-06 Small-etching-mark capacitive touch screen structure and manufacturing method thereof

Country Status (1)

Country Link
CN (1) CN104571764A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106354305A (en) * 2016-08-25 2017-01-25 京东方科技集团股份有限公司 Touch display module, preparing method and display device thereof
CN106708347A (en) * 2017-03-14 2017-05-24 凯盛科技股份有限公司 Double-sided metal wired capacitive screen functional plate
CN106708322A (en) * 2017-01-04 2017-05-24 合肥鑫晟光电科技有限公司 Touch panel, touch panel display device and touch panel preparing method
WO2018161781A1 (en) * 2017-03-06 2018-09-13 京东方科技集团股份有限公司 Bonding region structure, manufacturing method therefor, panel, and touch display device
CN109189267A (en) * 2018-09-07 2019-01-11 芜湖伦丰电子科技有限公司 A method of solving touch screen etched mark

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103226212A (en) * 2013-04-11 2013-07-31 红安华州光电科技有限公司 Vanishing transparent conductive film
US20140320765A1 (en) * 2013-04-24 2014-10-30 Tpk Touch Solutions (Xiamen) Inc. Touch panel and fabrication method thereof
CN104156118A (en) * 2014-08-20 2014-11-19 山东华芯富创电子科技有限公司 Touch control panel structure and manufacturing method thereof
CN204347809U (en) * 2015-01-06 2015-05-20 山东华芯富创电子科技有限公司 There is the capacitive touch screen structure of low etched mark

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103226212A (en) * 2013-04-11 2013-07-31 红安华州光电科技有限公司 Vanishing transparent conductive film
US20140320765A1 (en) * 2013-04-24 2014-10-30 Tpk Touch Solutions (Xiamen) Inc. Touch panel and fabrication method thereof
CN104156118A (en) * 2014-08-20 2014-11-19 山东华芯富创电子科技有限公司 Touch control panel structure and manufacturing method thereof
CN204347809U (en) * 2015-01-06 2015-05-20 山东华芯富创电子科技有限公司 There is the capacitive touch screen structure of low etched mark

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106354305A (en) * 2016-08-25 2017-01-25 京东方科技集团股份有限公司 Touch display module, preparing method and display device thereof
WO2018036343A1 (en) * 2016-08-25 2018-03-01 京东方科技集团股份有限公司 Touch display module, method for manufacturing the same, and display device
CN106354305B (en) * 2016-08-25 2019-09-03 京东方科技集团股份有限公司 A kind of touch-control display module, its production method and display device
CN106708322A (en) * 2017-01-04 2017-05-24 合肥鑫晟光电科技有限公司 Touch panel, touch panel display device and touch panel preparing method
WO2018126710A1 (en) * 2017-01-04 2018-07-12 京东方科技集团股份有限公司 Touch panel, touch display device and touch panel preparation method
US10782805B2 (en) 2017-01-04 2020-09-22 Boe Technology Group Co., Ltd. Touch panel, including blanking layer, touch display device including touch panel and method for manufacturing touch panel
CN106708322B (en) * 2017-01-04 2024-04-16 合肥鑫晟光电科技有限公司 Touch panel, touch display device and preparation method of touch panel
WO2018161781A1 (en) * 2017-03-06 2018-09-13 京东方科技集团股份有限公司 Bonding region structure, manufacturing method therefor, panel, and touch display device
US10871843B2 (en) 2017-03-06 2020-12-22 Hefei Xinsheng Optoelectronics Technology Co., Ltd. Bonding area structure, method of manufacturing the same, panel and touch display device
CN106708347A (en) * 2017-03-14 2017-05-24 凯盛科技股份有限公司 Double-sided metal wired capacitive screen functional plate
CN109189267A (en) * 2018-09-07 2019-01-11 芜湖伦丰电子科技有限公司 A method of solving touch screen etched mark
CN109189267B (en) * 2018-09-07 2021-06-04 芜湖伦丰电子科技有限公司 Method for solving etching marks of touch screen

Similar Documents

Publication Publication Date Title
CN103049121B (en) Contactor control device and manufacture method thereof
US9454267B2 (en) Touch sensing circuit and method for making the same
US9448672B2 (en) Touch panel structure and fabrication method for the same
US8946578B2 (en) Touch panel and a manufacturing method thereof
CN102253782B (en) ITO (Indium Tin Oxide)-bridged integrated capacitive touch screen and manufacturing method
US20100053114A1 (en) Touch panel apparatus and method for manufacturing the same
CN107512050B (en) Touch panel and preparation method thereof, touch control display apparatus
CN202838282U (en) Touch panel and electronic device thereof
CN103472951A (en) Touch screen, method for manufacturing same and display device
TW201124766A (en) Display device with touch panel
CN104571764A (en) Small-etching-mark capacitive touch screen structure and manufacturing method thereof
CN104423682A (en) Touch panel and manufacturing method thereof
CN107229360A (en) Contact panel, its manufacture method and touch control display apparatus
CN102866816A (en) Capacitive touch sensor, manufacturing method thereof, touch screen and display device
CN104156118A (en) Touch control panel structure and manufacturing method thereof
CN204143400U (en) A kind of touch panel structure provided
CN102314271B (en) Capacitive touch graphic structure and manufacturing method thereof, touch panel and touch display device
CN203535595U (en) Touch screen and display device
JP2014211685A (en) Display device integrated with touch sensor
CN102298475A (en) Indium tin oxide (ITO) through hole integrated capacitive touch screen and production method thereof
CN104267859A (en) Touch screen and production thereof and touch display device
CN104035644A (en) Color capacitive touch screen and manufacturing method thereof
CN202453846U (en) Touch device
CN104252278A (en) OGS (one-glass solution) touch screen substrate, manufacturing method of OGS touch screen substrate and related equipment
US20200081579A1 (en) Touch structure and manufacturing method thereof, and touch device

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20150429