CN104570332A - Magnetic field system of MEMS scanning galvanometer - Google Patents
Magnetic field system of MEMS scanning galvanometer Download PDFInfo
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- CN104570332A CN104570332A CN201310479059.9A CN201310479059A CN104570332A CN 104570332 A CN104570332 A CN 104570332A CN 201310479059 A CN201310479059 A CN 201310479059A CN 104570332 A CN104570332 A CN 104570332A
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- scanning galvanometer
- mems scanning
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- magnetic field
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Abstract
The invention discloses a magnetic field system of an MEMS scanning galvanometer. The magnetic field system comprises an MEMS scanning galvanometer chip and one or more magnet body groups, wherein each magnet body group comprises an upper magnet body and a lower magnet body which are respectively positioned on the upper and lower sides of the MEMS scanning galvanometer chip; opposite side surfaces of the upper magnet bodies and the lower magnet bodies are the same in magnetic pole. The magnetic field system optimizes the relative positions of a permanent magnet and the galvanometer, and can ensure that the magnetic induction intensity of the MEMS scanning galvanometer on a driving plane reaches the maximum.
Description
Technical field
The application relates to a kind of MEMS scanning galvanometer, particularly relates to a kind of field system of MEMS scanning galvanometer.
Background technology
The acting force that electrified wire is subject in magnetic field.Electric current is I, the long straight wire for L.The Ampère force size be subject in uniform magnetic field B is: F=ILBsin (I, B), and wherein (I, B) is the angle between direction of current and magnetic direction.The direction of Ampère force is judged by left-hand rule.The present invention relates to a kind of MEMS scanning galvanometer (as shown in Figure 1), galvanometer is connected with outer rotating bezel by Y-direction rotation axis, and outer rotating bezel is connected with stationary substrate to rotation axis by X, and such galvanometer just realizes two-dimension vibration by X, Y two to rotation axis.By micro fabrication, the outer rotating bezel of galvanometer prepares wire coil.Whole MEMS scanning galvanometer is placed in magnetic field, when have in wire coil electric current by time, magnetic field can produce Ampère force to electrified metal line, thus produces the rotating torque of galvanometer.The Ampère force wherein causing MEMS scanning galvanometer to vibrate is relevant with the magnetic field intensity on galvanometer surface.
The scope of MEMS scanning galvanometer application is relatively wider, is generally applied to laser display technology now.And present laser display technique has red, green, blue three look laser respectively through expanding, incides on corresponding light valve after shimming, eliminating coherence, light valve is added with image modulation signal, three look laser after modulation incide projection objective by after X prism color, project screen finally by projection objective, obtain laser display image.MEMS scanning projection technology application MEMS scan mirror, can carry out vibration at high speed in mutually perpendicular both direction.The modulated laser of carry image information is mapped on minute surface, is scanned projection imaging by eyeglass, and picture can reach infinite distance and not need focusing.MEMS scanning galvanometer has conductive coil, and galvanometer puts into field system, and by certain electric current in conductive coil, the effect of Ampère force makes galvanometer deflect.Optimization field system can strengthen the magnetic field intensity in the driving plane of MEMS scanning galvanometer, thus when drive current is constant, increases the Ampère force driven, thus make MEMS scanning galvanometer have larger rotational angle, increases the area of projected image.
Ginseng Fig. 3, shown in 4, existing field system is the both sides or the bottom that permanent magnet are placed on MEMS scanning galvanometer, thus makes galvanometer work, but this system can not make the magnetic field intensity in the driving plane of MEMS scanning galvanometer reach maximum.
Summary of the invention
Object of the present invention provides a kind of field system of MEMS scanning galvanometer, makes the magnetic field intensity in the plane of MEMS scanning galvanometer chip reach maximum.
For achieving the above object, the invention provides following technical scheme:
The embodiment of the present application discloses a kind of field system of MEMS scanning galvanometer, comprise MEMS scanning galvanometer chip and at least one magnet group, described each magnet group comprises the upper magnet and lower magnet that lay respectively at the upper and lower both sides of described MEMS scanning galvanometer chip, the opposite face magnetic pole same sex of described upper magnet and lower magnet.
Preferably, in the field system of above-mentioned MEMS scanning galvanometer, the field system of described MEMS scanning galvanometer has two magnet groups, and the pole orientation being positioned at two magnets on the upside of MEMS scanning galvanometer chip is contrary.
Preferably, in the field system of above-mentioned MEMS scanning galvanometer, the field system of described MEMS scanning galvanometer has two magnet groups, and the pole orientation being positioned at two magnets of MEMS scanning galvanometer chip underside is contrary.
Preferably, in the field system of above-mentioned MEMS scanning galvanometer, two described magnet groups are about the Central Symmetry of described MEMS scanning galvanometer chip.
Compared with prior art, the invention has the advantages that: the present invention is respectively equipped with magnet in the both sides up and down of MEMS scanning galvanometer chip, the magnetic field intensity in the plane of MEMS scanning galvanometer chip can be made to maximize.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present application or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, the accompanying drawing that the following describes is only some embodiments recorded in the application, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is depicted as MEMS scanning galvanometer structural representation in the specific embodiment of the invention;
Figure 2 shows that the sectional view of the field system of MEMS scanning galvanometer in the specific embodiment of the invention;
Figure 3 shows that the MEMS scanning galvanometer left and right sides is provided with the schematic diagram of magnet;
Figure 4 shows that the schematic diagram being provided with magnet group below MEMS scanning galvanometer;
Figure 5 shows that the magnetic field intensity in the plane of MEMS scanning galvanometer in Fig. 1;
Figure 6 shows that the magnetic field intensity in the plane of MEMS scanning galvanometer in Fig. 2;
Figure 7 shows that the magnetic field intensity in the plane of MEMS scanning galvanometer in Fig. 3.
Embodiment
MEMS MEMS (micro electro mechanical system) (Micro-Electro-Mechanical Systems)
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be described in detail the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art obtain under the prerequisite not making creative work, all belongs to the scope of protection of the invention.
The field system of micro mirror makes MEMS scanning galvanometer can obtain corresponding power thus vibrate in magnetic field.And in order to make MEMS scanning galvanometer can obtain maximum power in magnetic field, the magnetic field intensity in the plane of MEMS scanning galvanometer just must be made to maximize.
In order to make the magnetic field intensity in the plane of MEMS scanning galvanometer maximize, the structure of different magnet groups can be adopted, obtaining any structure and magnetic field intensity can be made maximum.
Shown in ginseng Fig. 1, MEMS scanning galvanometer chip 11 comprises X rotation axis 111, Y rotation axis 112, outer rotating bezel 113, wire coil 114 and micro mirror 115.
Shown in ginseng Fig. 2, the field system of the MEMS scanning galvanometer of the present embodiment has two magnet groups and a MEMS scanning galvanometer chip 11, and each magnet group comprises the upper magnet 12 and lower magnet 13 that lay respectively at described MEMS scanning galvanometer chip about 11 both sides.The pole orientation being positioned at two upper magnets on the upside of MEMS scanning galvanometer chip is contrary.Two magnet groups are about the Central Symmetry of MEMS scanning galvanometer chip 11.
MEMS scanning galvanometer chip 11 is positioned between upper and lower permanent magnet by this system, due to MEMS scanning galvanometer chip having conductive coil, when electric current is by coil, coil can be subject to the effect of Ampère force in magnetic field, thus producing the moment making galvanometer deflect, make the work of MEMS scanning galvanometer.And the magnetic induction density in the driving plane of MEMS scanning galvanometer can be made to reach maximum.
comparative example 1:shown in ginseng Fig. 3, the left and right sides of MEMS scanning galvanometer chip 21 is respectively equipped with magnet 22 and 23.
comparative example 2:shown in ginseng Fig. 4, the below of MEMS scanning galvanometer chip 31 is provided with two magnets 32.
Fig. 5-7 respectively illustrates the magnetic field intensity of MEMS scanning galvanometer in different magnet group structures.Fig. 5 shows the magnetic field intensity in the field system of the micro mirror of the present embodiment.Fig. 6 shows the magnetic field intensity in the plane of MEMS scanning galvanometer when magnet group is put on both sides.Fig. 7 shows the magnetic field intensity in the plane of MEMS scanning galvanometer when putting magnet group below.
Maximum when can see the magnetic field intensity of MEMS scanning galvanometer the field system of the micro mirror of the present embodiment from Fig. 5-7 is 0.64T, is greater than magnetic field intensity 4.7e-4T when magnetic field intensity 0.2T when magnet group is put on both sides and underneath magnet group.
Can see that the field system of micro mirror of the present invention better can focus on increase magnetic field compared to other field system and the magnetic field intensity in the plane of MEMS scanning galvanometer is maximized.
It should be noted that, in this article, the such as relational terms of first and second grades and so on is only used for an entity or operation to separate with another entity or operational zone, and not necessarily requires or imply the relation that there is any this reality between these entities or operation or sequentially.And, term " comprises ", " comprising " or its any other variant are intended to contain comprising of nonexcludability, thus make to comprise the process of a series of key element, method, article or equipment and not only comprise those key elements, but also comprise other key elements clearly do not listed, or also comprise by the intrinsic key element of this process, method, article or equipment.When not more restrictions, the key element limited by statement " comprising ... ", and be not precluded within process, method, article or the equipment comprising described key element and also there is other identical element.
The above is only the embodiment of the application; it should be pointed out that for those skilled in the art, under the prerequisite not departing from the application's principle; can also make some improvements and modifications, these improvements and modifications also should be considered as the protection domain of the application.
Claims (3)
1. the field system of a MEMS scanning galvanometer, comprise MEMS scanning galvanometer chip and at least one magnet group, it is characterized in that: described each magnet group comprises the upper magnet and lower magnet that lay respectively at the upper and lower both sides of described MEMS scanning galvanometer chip, the opposite face magnetic pole same sex of described upper magnet and lower magnet.
2. the field system of MEMS scanning galvanometer according to claim 1, is characterized in that: the field system of described MEMS scanning galvanometer has two magnet groups, and the pole orientation being positioned at two upper magnets on the upside of MEMS scanning galvanometer chip is contrary.
3. the field system of MEMS scanning galvanometer according to claim 2, is characterized in that: two described magnet groups are about the Central Symmetry of described MEMS scanning galvanometer chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310479059.9A CN104570332B (en) | 2013-10-14 | 2013-10-14 | Magnetic field system of MEMS scanning galvanometer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310479059.9A CN104570332B (en) | 2013-10-14 | 2013-10-14 | Magnetic field system of MEMS scanning galvanometer |
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| Publication Number | Publication Date |
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| CN104570332A true CN104570332A (en) | 2015-04-29 |
| CN104570332B CN104570332B (en) | 2017-01-18 |
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| CN201310479059.9A Active CN104570332B (en) | 2013-10-14 | 2013-10-14 | Magnetic field system of MEMS scanning galvanometer |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105824176A (en) * | 2016-03-02 | 2016-08-03 | 上海理鑫光学科技有限公司 | Curved surface reflecting type ultra-short focal projection lens based on mems |
| CN106249402A (en) * | 2016-08-31 | 2016-12-21 | 常州创微电子机械科技有限公司 | A kind of one-dimensional micro mirror of Electromagnetic Drive |
| CN108415155A (en) * | 2018-03-13 | 2018-08-17 | 北方工业大学 | Two-dimensional micro-galvanometer driving frequency adjusting system and method |
| CN110764253A (en) * | 2018-07-26 | 2020-02-07 | 中科融合感知智能研究院(苏州工业园区)有限公司 | Two-dimensional vector scanning micro-mirror |
| CN111562560A (en) * | 2019-11-05 | 2020-08-21 | 苏州希景微机电科技有限公司 | MEMS micro-mirror, laser radar and automatic driving equipment |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012070610A1 (en) * | 2010-11-24 | 2012-05-31 | 日本電気株式会社 | Optical scanning device |
| CN202167973U (en) * | 2011-08-08 | 2012-03-14 | 郑寒东 | Short-stroke reciprocating linear motor |
-
2013
- 2013-10-14 CN CN201310479059.9A patent/CN104570332B/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105824176A (en) * | 2016-03-02 | 2016-08-03 | 上海理鑫光学科技有限公司 | Curved surface reflecting type ultra-short focal projection lens based on mems |
| CN106249402A (en) * | 2016-08-31 | 2016-12-21 | 常州创微电子机械科技有限公司 | A kind of one-dimensional micro mirror of Electromagnetic Drive |
| CN108415155A (en) * | 2018-03-13 | 2018-08-17 | 北方工业大学 | Two-dimensional micro-galvanometer driving frequency adjusting system and method |
| CN110764253A (en) * | 2018-07-26 | 2020-02-07 | 中科融合感知智能研究院(苏州工业园区)有限公司 | Two-dimensional vector scanning micro-mirror |
| CN110764253B (en) * | 2018-07-26 | 2022-04-08 | 中科融合感知智能研究院(苏州工业园区)有限公司 | Two-dimensional vector scanning micro-mirror |
| CN111562560A (en) * | 2019-11-05 | 2020-08-21 | 苏州希景微机电科技有限公司 | MEMS micro-mirror, laser radar and automatic driving equipment |
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| Publication number | Publication date |
|---|---|
| CN104570332B (en) | 2017-01-18 |
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Application publication date: 20150429 Assignee: Changzhou Micro Innovation Technology Co., Ltd. Assignor: Suzhou Institute of Nano-Tech and Bionics (SINANO), Chinese Academy of Sciences Contract record no.: 2015320010159 Denomination of invention: Magnetic field system of MEMS scanning galvanometer License type: Exclusive License Record date: 20151126 |
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