CN104567671A - Measuring graduation and photoelectric position measuring device having the same - Google Patents
Measuring graduation and photoelectric position measuring device having the same Download PDFInfo
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- CN104567671A CN104567671A CN201410810833.4A CN201410810833A CN104567671A CN 104567671 A CN104567671 A CN 104567671A CN 201410810833 A CN201410810833 A CN 201410810833A CN 104567671 A CN104567671 A CN 104567671A
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- 238000005259 measurement Methods 0.000 claims description 51
- 230000005693 optoelectronics Effects 0.000 claims description 15
- 235000008429 bread Nutrition 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000006094 Zerodur Substances 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 210000004276 hyalin Anatomy 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
- G01D5/32—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light
- G01D5/34—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells
- G01D5/347—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells using displacement encoding scales
- G01D5/34707—Scales; Discs, e.g. fixation, fabrication, compensation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/14—Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
- G01D5/32—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light
- G01D5/34—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells
- G01D5/36—Forming the light into pulses
- G01D5/38—Forming the light into pulses by diffraction gratings
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optical Transform (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
- Length Measuring Devices By Optical Means (AREA)
Abstract
A measuring graduation and a photoelectric position measuring device having the same are provided. The measuring graduation relates to measuring graduation (1) of the photoelectric position measuring device used for measuring positions at the first direction (X) and the second direction (Y) extending and perpendicular to the first direction and is easily manufactured, and positions can be accurately measured by the measuring graduation. The measuring graduation (1) includes a phase grating formed by optical grating units (2) which are periodically arranged at the first direction (X) and the second direction (Y). Each of the optical grating units (2) have an outer contour that is formed by a line. Each line includes two mutually opposing first straight edges (K1), two mutually opposing second straight edges (K2) extending perpendicularly to the first straight edges, and connecting lines (K3) extending between the first straight edges (K1) and the second straight edges (K2). The connecting lines form an obtuse angle (alpha).
Description
Technical field
The present invention relates to for the measurement calibration at first direction and the optoelectronic position measuring instrument perpendicular to the second direction measuring position of first direction stretching, extension, it comprises the phase grating with the raster unit laid at first direction and second direction cycle.
Scale is used as in the optoelectronic position measuring instrument that described measurement calibration is measured at bidimensional.Beam alignment measured calibration in order to position measurement and by generating the first divided beams measuring the diffraction on calibration, described point of beam and another divided beams are interfered.
The present invention relates to the optoelectronic position measuring instrument with described measurement calibration in addition.Described optoelectronic position measuring instrument is for measuring the change in location of two relatively-movable measured targets.
Wherein measure calibration by beam flying and the light beam of the foundation position modulation measured on calibration is flowed to scanister, described scanister therefrom forms the size of the instantaneous position relative measurement calibration of scanister.
Background technology
The measurement calibration of known described type and optoelectronic position measuring instrument from EP1106972A1.Measure calibration to be made up of raster unit, it is included in the square that first direction and second direction are periodically laid, and wherein said square forms the chessboard pattern with 90 ° of adjacent angles.
In DE 4132941 C2, the measurement calibration of another kind of type and optoelectronic position measuring instrument are illustrated.Measure calibration to be made up of the square periodically laid at first direction and second direction, wherein squarely lay spaced apartly and do not contact with each other.
Summary of the invention
Task of the present invention is for being described at first direction and the measurement calibration of optoelectronic position measuring instrument of second direction measuring position that stretches perpendicular to first direction, described measurement calibration can easily manufacture, and can two direction of measurement accurately measuring positions by described measurement calibration.
The measurement calibration of the feature by having claim 1 realizes by this task.
The phase grating with the raster unit periodically laid at first direction and second direction is comprised according to measurement calibration of the present invention.The raster unit periodically laid has the exterior contour formed by lines separately, described lines comprise the second relative straight flange that two relative the first straight flanges and two stretch perpendicular to described first straight flange and the connecting line between the first straight flange and the second straight flange, and described connecting line is encircled into obtuse angle respectively.
Described lines are encircled into the geometric scheme be associated in the plane propped up by first direction and second direction.
Obtuse angle alpha is as given a definition: 90 ° of < α < 180 °.
Connecting line between each the first straight flange and second straight flange surrounds obtuse angle, and wherein said connecting line comprises vertical element and each limit and described vertical element respectively and surrounds obtuse angle respectively.
The each of raster unit is formed with the reflecting surface region of relative retrude by the reflecting surface protruded respectively, and the reflecting surface region of wherein said retrude surrounds the reflecting surface protruded.The difference in height of described two reflectings surface is referred to as ladder height and by other parameter, such as wavelength and refractive index, define the phase shift of the light beam generation injected in a manner known.
Have respectively according to exterior contour of the present invention according to the reflecting surface of the protrusion of raster unit of the present invention or the reflecting surface of relative retrude.
Wherein phase grating can by two perpendicular to first direction and second direction spaced apart the reflection horizon of laying form, described reflection horizon is laid in the both sides of transparent wall.Another layer of one of them reflecting surface and described two layers of forming protrusion of wherein said two layers forms the reflecting surface of retrude.When the reflecting surface of retrude is through reflecting surface time, phase grating plays a role especially efficiently.
Being preferably formed phase grating is to suppress the 0th order of diffraction.For this reason preferred, select the surface portion of the surface portion of the reflecting surface of the protrusion of raster unit and the reflecting surface of retrude in this wise, make it possible to reflect identical light intensity.
Connecting line is formed as straight line makes the manufacture of measurement calibration become simple.Wherein also advantageously, it is identical for being encircled into negative obtuse angle, is especially 135 °.
In addition advantageously, when the phase mutual edge distance on the first limit is equal with the phase mutual edge distance of Second Edge.Wherein generation comprises the square of corner cut as lines.
Especially advantageously raster unit is designed to four axially symmetric structures.Wherein exterior contour and the first axis of symmetry Mirror Symmetry ground stretch, described first axis of symmetry stretches perpendicular to the first limit, and with the second axis of symmetry Mirror Symmetry stretch, described second axis of symmetry stretches perpendicular to Second Edge, and with the 3rd axis of symmetry Mirror Symmetry stretch, described 3rd axis of symmetry and the first axis of symmetry are 45 ° and stretch, and with the 4th axis of symmetry Mirror Symmetry stretch, described 4th axis of symmetry stretches perpendicular to the 3rd axis of symmetry.
Show, if the length of Second Edge is respectively 10% to 90% of the phase mutual edge distance on the first limit, and the length on the first limit is respectively 10% to 90% of the phase mutual edge distance of Second Edge equally, is able to obvious improvement relative to background technology diffraction characteristic.
If the length of Second Edge be respectively the phase mutual edge distance on the first limit 30% to 70% and first the length on limit be respectively 30% to 70% of the phase mutual edge distance of Second Edge, further improvement can be caused.Mutual distance definition be distance between each limit.
As for measurement calibration being applied in optoelectronic position measuring instrument advantageously, first limit is parallel to the directed and Second Edge in one of them directions of two direction of measurement, and to be parallel to another directions of two direction of measurement directed, or the first limit tilts the directed and Second Edge in 45 ° of ground to the second direction of measurement orientation with tilting 45 ° to the first direction of measurement.
In addition task of the present invention also relates to and being described a kind of optoelectronic position measuring instrument, can accurately measuring position by described optoelectronic position measuring instrument.
Feature by having claim 13 realizes by this task.
The diffraction efficiency measuring calibration can be maximized and also can realize the homogenieity of diffraction characteristic on the other hand on relatively large surface by one aspect of the present invention.This is always very important, because the planar expansion of required measurement calibration should be larger all the time.Especially there is described requirement use the optoelectronic position measuring instrument situation measuring calibration or be configured with described measurement calibration in photoetching-system under, this is because the measuring process realized whereby on the one hand more should become less and-to cause by constantly becoming large wafer-required measurement stroke becomes larger and larger.By the present invention realize the diffraction characteristic on relatively large surface homogenieity and thus attainable electric scanning signal very low signal fluctuation owing to, in the version according to raster unit of the present invention, the minimum value of the 0th order of diffraction is in the maximal value of first order of diffraction.
Also measurement calibration can be relatively easily manufactured by the present invention.The exterior contour with raster unit does not contain acute angle and 90 ° of angles and can not contact with each other at the exterior contour that both direction is laid side by side.The photomask of described structure can be exposed, because can be exposed according to exterior contour of the present invention by the combination of shapes of several rectangle and/or square and/or triangular form by the electronic beam recorder with variable beam aperture (Variable Shaped Beam Technology=VSB).
Accompanying drawing explanation
Accompanying drawing 1 is the vertical view according to measurement calibration of the present invention;
Accompanying drawing 2 is sectional view II-II of the measurement calibration according to accompanying drawing 1;
Accompanying drawing 3 is shape first order of diffraction of raster unit and the Strength Changes of the 0th order of diffraction according to measuring calibration, and
Accompanying drawing 4 be according to the area ratio of raster unit according to the measurement calibration of background technology with according to measurement calibration of the present invention in the Strength Changes of first order of diffraction and the 0th order of diffraction.
Embodiment
Attachedly Figure 1 shows that at first direction X and the vertical view of measurement calibration 1 of the optoelectronic position measuring instrument of second direction Y measuring position that stretches perpendicular to first direction.Measure calibration and form the phase grating be made up of the raster unit periodically laid at first direction X and second direction Y.According to raster unit 2 of the present invention, there is exterior contour separately that formed by lines, described lines comprise two relative first straight flange K1 and two connecting line K3 between the second relative straight flange K2 and each first limit K1 and Second Edge K2 stretched perpendicular to described first straight flange, and described connecting line is encircled into obtuse angle alpha respectively.
Connecting line K3 comprises straight line in an advantageous manner.Obtuse angle alpha between first limit K1 and straight connecting line K3 and between Second Edge K2 and straight connecting line K3 is especially respectively 135 °.
In addition the phase mutual edge distance A1 of the first limit K1 is equal with the phase mutual edge distance A2 of Second Edge K2.
Particularly advantageous expansion scheme is four rotational symmetry profiles.Wherein exterior contour
With the first axis of symmetry S1 Mirror Symmetry, described first axis of symmetry stretches perpendicular to the first limit K1, and
With the second axis of symmetry S2 Mirror Symmetry, described second axis of symmetry stretches perpendicular to Second Edge K2, and
With the 3rd axis of symmetry S3 Mirror Symmetry, described 3rd axis of symmetry and the first axis of symmetry S1 are 45 ° and stretch, and
With the 4th axis of symmetry S4 Mirror Symmetry, described 4th axis of symmetry stretches perpendicular to the 3rd axis of symmetry S3.
Described expansion scheme has this advantage, and the diffraction characteristic of raster unit 2 is consistent and the scanister of therefore both direction X and Y can be formed in the same manner at both direction X and Y.On the one hand generate identical spatial depiction for direction X and Y, the angle of the namely pending order of diffraction is unanimously also have identical intensity with the pending order of diffraction relative to X-Y-plane, can use identical treating apparatus thus for both direction X and Y.
Especially when the first limit K1 is parallel to two direction of measurement X, one of them direction Y orientation of Y and Second Edge K2 are parallel to two direction of measurement X, another direction X of Y is directed, or first limit K1 when tilting that 45 ° ground is directed and Second Edge K2 tilts 45 ° of ground orientations to second direction Y to first direction X, produce the condition that this is favourable.
Measuring calibration is in an illustrated embodiment reflection phase grating, and described phase grating is used for by so-called reflected light measurement position.Reflected light means, irradiates phase grating and the light beam that hits phase grating by diffraction reflectingly from side.In order to measuring position requires phase grating exactly, forming described phase grating is to as far as possible fully suppress the 0th order of diffraction.Show, parameter is the area ratio F of selected raster unit 2.The periodic raster unit of P1 2 is laid in the periodic raster unit 2 of first direction X and P2 and is laid in second direction Y.Each raster unit 2 is made up of first surface F1 and second surface F2.First surface F1 is formed and second surface F2 being formed by the reflecting surface that described exterior contour surrounds by raster unit 2 by the reflecting surface of the protrusion with described exterior contour.Area ratio F is F1/F2 and is select in this wise, reflects identical intensity (light of the directly reflection when not considering diffraction) from the light beam hit respectively.This causes eliminating the 0th order of diffraction when ladder height H between the reflecting surface F2 of the reflecting surface F1 of the protrusion chosen at the wavelength relying on the light used and relative retrude.
In order to accurate and high-resolution position measurement advantageously periodically P1 and P2 be less than 10 μm.
In addition especially P1 equals P2.
The attached sectional view II-II that Figure 2 shows that phase grating shown in Figure 1.The ladder height H of raster unit 2 is reflection horizon 3 and 4 formation of being laid at intervals perpendicular to first direction X and second direction Y by two in this example, and described reflection horizon is laid in the both sides of transparent wall 5.Ladder height H between structurized layer 3 and layer 4 through in the present embodiment such as, by other parameter, refractive index, determine on surperficial F1 by the light beam that reflects and on surperficial F2 by the progressive error between the light beam that reflects.
Wavelength for about 980nm of the light beam used when scanning produces the required ladder height H being approximately 180nm, to eliminate the 0th order of diffraction.
Reflection horizon 3 and 4 can comprise such as chromium, gold, the material such as aluminium and silicon.The preferred use expansion coefficient glass of being almost equal to zero as the carrier in reflection horizon 4, especially ZERODUR or ULE.Reflection horizon 4 is laid in below surface 1 throughly, or just partly on surperficial F1 side.
Such as siliceous material, especially as SiO
2, Ta
2o
5be suitable as transparent wall.
The attached Strength Changes relevant to the shape of the exterior contour with raster unit 2 that Figure 3 shows that first order of diffraction (1.BO) and the 0th order of diffraction (0.BO).Strength Changes is marked according to the ratio between the length B of Second Edge K2 and the phase mutual edge distance A1 of the first limit K1.Below numerical value, raster unit 2 and exterior contour is illustrated in order to understand ratio B/A1 better.Accompanying drawing 3 is the maximum intensity I of accessible first order of diffraction (1BO) of each exterior contour-when being respectively the surface ratio F of the best of corresponding exterior contour-show.
Be B/A1=0 according to background technology according to this ratio of DE 4132941 C2 and be B/A1=1 according to this ratio of EP1106972 A1.As can be seen from accompanying drawing 3, the region of first order of diffraction (1.BO) between described two limit has its maximal value.The same region between described two limit of 0th order of diffraction (0.BO) has its minimum value.This new knowledge uses in the present invention.
Advantageously, the length B of Second Edge K2 is respectively 10% to 90% of the phase mutual edge distance A1 of the first limit K1, i.e. selection percentage B/A1 between 0.1 and 0.9.This ratio is also applicable to the first limit K1, makes the length C of the first limit K1 be respectively 10% to 90%, selection percentage C/A2 between 0.1 and 0.9 equally of the phase mutual edge distance A2 of Second Edge K2.
If the length B of Second Edge K2 is respectively 30% to 70% of the phase mutual edge distance A1 of the first limit K1, i.e. selection percentage B/A1 between 0.3 and 0.7, and first the length C of limit K1 be 30% to 70% of the phase mutual edge distance A2 of Second Edge K2, i.e. selection percentage C/A2 between 0.3 and 0.7, then realize better optimizing.
The attached Strength Changes that Figure 4 shows that area ratio F first order of diffraction (1.BO) and the 0th order of diffraction (0.BO) in the measurement calibration neutralization according to background technology (DE 4132941C2) is according to measurement calibration of the present invention according to raster unit 2.Strength Changes for shown two raster units the 0th order of diffraction is consistent.Therefrom can find out in manufacturing technology, also to there is advantage according to expansion scheme of the present invention.Cause the intensity of the 0th order of diffraction to improve 18% at most in the introduction based on diffraction efficiency is reliably reduced maximum attainable diffraction efficiency 10%.Produce on the one hand according to expansion scheme of the present invention first order of diffraction higher maximal value and in use 10% tolerance window cause the intensity of the 0th order of diffraction at most only to improve 6% extraly.Therefore measure calibration designed according to this invention to be especially applicable to being used in high-resolution position measurement instrument, turned to by the repeatedly diffraction (using first order of diffraction) on measurement calibration at every turn by the light beam of position modulation in described position measurement instrument.
Based on the curvilinear motion in accompanying drawing 3 and accompanying drawing 4 of the Rotating fields of accompanying drawing 2, in described Rotating fields, the reflectivity of surperficial F1 is slightly larger than the reflectivity of surperficial F2.The maximal value of the 0th order of diffraction is in F < 0.5 scope thus.Situation shown in structure shown in accompanying drawing 2 is caused by following, and reflection horizon 4 is covered by hyaline layer 5 and the light tegillum 5 that reflected by layer 4 absorbs.
Measure calibration designed according to this invention also to may be used for measuring the position perpendicular to X-Y-plane, this be please refer to EP 1762828 A2.
Claims (13)
1. for the measurement calibration at first direction (X) and the optoelectronic position measuring instrument perpendicular to second direction (Y) measuring position of first direction stretching, extension, it comprises the phase grating with the raster unit (2) periodically laid at first direction (X) and second direction (Y), it is characterized in that, described raster unit (2) has the exterior contour formed by lines separately, described lines comprise relative the second straight flange (K2) that two relative the first straight flanges (K1) and two stretch perpendicular to described first straight flange and the connecting line (K3) between each the first limit (K1) and Second Edge (K2), described connecting line is encircled into obtuse angle (α) respectively.
2. measurement calibration according to claim 1, is characterized in that, described connecting line (K3) is straight line, and described obtuse angle (α) is 135 °.
3. according to measurement calibration in any one of the preceding claims wherein, it is characterized in that, the phase mutual edge distance (A1) of described first limit (K1) is equal with the phase mutual edge distance (A2) of described Second Edge (K2).
4. measurement calibration according to claim 3, is characterized in that, described exterior contour
With the first axis of symmetry (S1) Mirror Symmetry, described first axis of symmetry stretches perpendicular to described first limit (K1), and
With the second axis of symmetry (S2) Mirror Symmetry, described second axis of symmetry stretches perpendicular to Second Edge (K2), and
With the 3rd axis of symmetry (S3) Mirror Symmetry, described 3rd axis of symmetry and the first axis of symmetry (S1) stretch in 45 °, and
With the 4th axis of symmetry (S4) Mirror Symmetry, described 4th axis of symmetry stretches perpendicular to the 3rd axis of symmetry (S3).
5. according to measurement calibration in any one of the preceding claims wherein, it is characterized in that, the length B of described Second Edge (K2) is respectively 10% to 90% of the phase mutual edge distance (A1) of described first limit (K1), and the length (C) on described first limit (K1) is respectively 10% to 90% of the phase mutual edge distance (A2) of described Second Edge (K2).
6. measurement calibration according to claim 5, it is characterized in that, the length B of described Second Edge (K2) is respectively 30% to 70% of the phase mutual edge distance (A1) of described first limit (K1), and the length (C) on described first limit (K1) is respectively 30% to 70% of the phase mutual edge distance (A2) of described Second Edge (K2).
7. according to measurement calibration in any one of the preceding claims wherein, it is characterized in that, described first limit (K1) is parallel to both direction (X, Y) another direction (Y) that direction (X) orientation in and described Second Edge (K2) are parallel to both direction (X, Y) is directed.
8. the measurement calibration according to any one of claim 1-6, it is characterized in that, described first limit (K1) to be tilted 45 ° of ground orientations to first direction (X) the directed and described Second Edge (K2) in 45 ° of ground that tilts to second direction (Y).
9. according to measurement calibration in any one of the preceding claims wherein, it is characterized in that, so form phase grating to suppress the 0th order of diffraction.
10. according to measurement calibration in any one of the preceding claims wherein, it is characterized in that, raster unit (2) is made up of first surface part (F1) and second surface part (F2) respectively, wherein said first surface part (F1) is formed by the reflecting surface protruded and described second surface part (F2) is the reflecting surface surrounded by described exterior contour, and the reflecting surface wherein protruded or the reflecting surface that this bread encloses is had described exterior contour.
11. measurement calibration according to claim 10, is characterized in that, raster unit (2) first surface part (F1) and second surface part (F2) select in this wise: reflect identical light intensity.
12. according to measurement calibration in any one of the preceding claims wherein, it is characterized in that, described phase grating is perpendicular to first direction (X) and the reflection horizon (3 of laying, second direction (Y) ground spaced apart by two, 4) form, described reflection horizon is laid in the both sides of transparent wall (5).
13. have the optoelectronic position measuring instrument according to measurement calibration in any one of the preceding claims wherein.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102013220190.7A DE102013220190B4 (en) | 2013-10-07 | 2013-10-07 | Measuring graduation and photoelectric position measuring device with this measuring graduation |
| DE102013220190.7 | 2013-10-07 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104567671A true CN104567671A (en) | 2015-04-29 |
| CN104567671B CN104567671B (en) | 2019-02-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410810833.4A Active CN104567671B (en) | 2013-10-07 | 2014-09-30 | Measurement indexing and the optoelectronic position measuring instrument with measurement indexing |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9453744B2 (en) |
| JP (1) | JP6667197B2 (en) |
| KR (1) | KR102169432B1 (en) |
| CN (1) | CN104567671B (en) |
| DE (1) | DE102013220190B4 (en) |
| TW (1) | TWI656327B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102016200847A1 (en) | 2016-01-21 | 2017-07-27 | Dr. Johannes Heidenhain Gesellschaft Mit Beschränkter Haftung | Optical position measuring device |
| JP7140495B2 (en) * | 2017-12-28 | 2022-09-21 | 株式会社ミツトヨ | Scale and its manufacturing method |
| US11398035B2 (en) | 2018-07-17 | 2022-07-26 | Brainlab Ag | Partitioning a medical image |
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| KR102169432B1 (en) | 2020-10-26 |
| DE102013220190B4 (en) | 2021-08-12 |
| JP6667197B2 (en) | 2020-03-18 |
| US9453744B2 (en) | 2016-09-27 |
| CN104567671B (en) | 2019-02-15 |
| TW201527721A (en) | 2015-07-16 |
| JP2015075484A (en) | 2015-04-20 |
| TWI656327B (en) | 2019-04-11 |
| US20150098094A1 (en) | 2015-04-09 |
| KR20150040763A (en) | 2015-04-15 |
| DE102013220190A1 (en) | 2015-04-09 |
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