CN104562009A - Metal wiring etching liquid composition and metal wiring forming method using same - Google Patents
Metal wiring etching liquid composition and metal wiring forming method using same Download PDFInfo
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- CN104562009A CN104562009A CN201410543417.2A CN201410543417A CN104562009A CN 104562009 A CN104562009 A CN 104562009A CN 201410543417 A CN201410543417 A CN 201410543417A CN 104562009 A CN104562009 A CN 104562009A
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- film
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/26—Acidic compositions for etching refractory metals
Abstract
The invention discloses a metal wiring etching liquid composition and metal wiring forming method using same. The composition can etch a metal membrane to form grids and a source electrode-drain electrode area of a thin film transistor of a semiconductor circuit. The composition is composed of the following components in percentage by weight: 15 to 25 wt% of hydrogen peroxide, 0.1 to 1 wt% of fluorine compounds, 0.5 to 3 wt% of carboxyl-containing amines, 0.1 to 1 wt% of azole compounds, 0.01 to 2 wt% of phosphoric acid or salts thereof, 0.1 to 3 wt% of sulfate, and the balance being water.
Description
Technical field
The present invention relates to a kind of metal wiring etchant, more particularly, relate to etching metal film and form the grid (gate) of thin film transistor and the metal wiring etchant in source drain (source-drain) region that form semiconductor circuit and the metal wiring formation method (Etchant composition for metal wire and method forpreparing metal wire using the same) utilizing said composition.
Background technology
Along with the high quality of the flat-panel display panels such as liquid-crystal display (LCD), high-definition and big area, be necessary the response speed improving display pannel.For this reason, make with the following method: the method will form thin film transistor (the Thin filmTransistor of the semiconductor circuit of display pannel, TFT) grid (Gate) and source drain (Source-Drain, S/D) region is formed with non-that be existing chromium and aluminium and their alloy, that resistance is lower copper metal, thus the raceway groove (channel) when grid work between raising source drain forms speed.And, in order to improve above-mentioned copper metallic membrane and the glass substrate of bottom or the bonding force of silicon insulating film and suppress copper to spread to silicon fiml, the intermediate metal film such as molybdenum (Mo), molybdenum alloy (Mo-alloy) is used with in the bottom of above-mentioned copper metallic membrane, but the residue of above-mentioned molybdenum and molybdenum alloy must be removed, bad etc. with the driving avoiding the short circuit of distribution in subsequent module technique to cause.For the etchant forming metal wiring (metal wire) with regard to etching above-mentioned metallic membrane, etching speed wants fast, the etching outline of the metal wiring etched is excellent, and the process number of substrate wants many, and be required to meet these conditions and the composition taken care of can stablized at normal temperatures.
Summary of the invention
Technical problem
Therefore, the object of the present invention is to provide a kind of metal wiring etchant of excellent in stability and utilize the metal wiring formation method of said composition.
Another object of the present invention is to provide a kind of etching speed is fast, etching outline is excellent metal wiring etchant and utilize the metal wiring formation method of said composition.
To deal with problems technical scheme
In order to achieve the above object, the invention provides a kind of metal wiring etchant, it comprises: the hydrogen peroxide of 15 to 25 % by weight; The fluorine cpd of 0.1 to 1 % by weight; The amine containing carboxyl of 0.5 to 3 % by weight; The azole compounds of 0.1 to 1 % by weight; The phosphate compound of 0.01 to 2 % by weight or its salt; The vitriol of 0.1 to 3 % by weight; And, all the other water of % by weight.
And the invention provides a kind of metal wiring formation method, it comprises: the step forming metallic membrane on substrate; Above-mentioned metallic membrane is formed the step of photo-resist pattern; And above-mentioned photo-resist pattern is used as mask, and makes etchant and above-mentioned metal diaphragm contacts and etch the step of above-mentioned metallic membrane, above-mentioned etchant comprises: the hydrogen peroxide of 15 to 25 % by weight; The fluorine cpd of 0.1 to 1 % by weight; The amine containing carboxyl of 0.5 to 3 % by weight; The azole compounds of 0.1 to 1 % by weight; The phosphate compound of 0.01 to 2 % by weight or its salt; The vitriol of 0.1 to 3 % by weight; And, all the other water of % by weight.
Advantageous effects
According to metal wiring etchant of the present invention and the metal wiring formation method utilizing said composition, must during the distribution of the metallic membrane of the duplex film of etch copper/molybdenum and copper/molybdenum alloy be in the lump formed, use take hydrogen peroxide as the etchant of principal constituent, this hydrogen peroxide can maintain the performance of high stability and the etching solution based on high stability for more time, thus also can obtain excellent cone angle and etching outline by fast-etching.And, remove the residue of lower film and molybdenum or molybdenum alloy, thus the driving that the short circuit of distribution in subsequent module technique can be avoided to cause is bad etc.
Accompanying drawing explanation
Fig. 1 shows the electron scanning micrograph of the etching characteristic according to one embodiment of the invention and comparative example.
Fig. 2 show according to the etchant of one embodiment of the invention, with the electron scanning micrograph of the etching characteristic of keeping number of days.
Fig. 3 show according to the etchant of one embodiment of the invention, for the electron scanning micrograph of the etching performance of process number.
Embodiment
The following detailed description of the present invention.
Metal wiring etchant according to the present invention is etch copper (Cu), the metallic membrane of molybdenum (Mo) and molybdenum alloy (Mo-alloy) etc. and form the gate electrode of metal wiring such as thin film transistor and the composition of source-drain electrode of semiconductor circuit, and above-mentioned metal wiring etchant comprises: the hydrogen peroxide of 15 to 25 % by weight; The fluorine cpd of 0.1 to 1 % by weight; The amine containing carboxyl of 0.5 to 3 % by weight; The azole compounds of 0.1 to 1 % by weight; The phosphate compound of 0.01 to 2 % by weight or its salt; The vitriol of 0.1 to 3 % by weight; And, all the other aqueous mediums of % by weight (in the present invention, as required referred to as " water ").
Above-mentioned hydrogen peroxide for etchant of the present invention is the oxygenant of metallic membrane, such as, it is oxidized according to following reaction formula 1 metallic membrane containing copper (Cu) and etches, the content of above-mentioned hydrogen peroxide is 15 to 25 % by weight relative to the total amount of etchant, be preferably 17 to 24 % by weight, more preferably 19 to 23 % by weight.If the content of above-mentioned hydrogen peroxide is crossed, exist at least can not the danger of etching metal film fully; if excessive, there is etch as the photoresist film of protective membrane and the interface of metallic membrane; thus there is the danger causing cone angle (Taper Angle) too small, but also there is the danger of copper metal membrane-coating over etching.
Reaction formula 1
Cu+H
2O
2→CuO+H
2O
Likely produce residue when the metallic membrane namely lower film of duplex film being comprised to molybdenum film and molybdenum alloy film etches, above-mentioned fluorine cpd are used as remover and the etching speed conditioning agent of above-mentioned residue.As the concrete example of above-mentioned fluorine cpd, there are HF (hydrofluoric acid), NaF, NaHF
2, NH
4f (Neutral ammonium fluoride), NH
4hF
2, NH
4bF
4, KF, KHF
2, AlF
3, HBF
4, LiF
4, KBF
4, CaF
2, and their mixture etc.The content of above-mentioned fluorine cpd is 0.1 to 1 % by weight relative to etchant total amount, is preferably 0.11 to 0.8 % by weight, more preferably 0.12 to 0.5 % by weight.If the content of above-mentioned fluorine cpd is less than 0.1 % by weight, the etching speed of metallic membrane is slack-off and there is the danger producing residue, if more than 1 % by weight, and the substrate likely damaging the glass of metal wiring formation etc. and the insulating film comprising silicon formed together with metal wiring.
The above-mentioned amine containing carboxyl, when etch copper metal and elementary cupric ion carry out ligand binding and play a part the process number increasing etching solution.As the concrete example of the above-mentioned amine containing carboxyl, there are L-Ala (alanine), aminobutyric acid (aminobutyric acid), L-glutamic acid (glutamicacid), iminodiethanoic acid (iminodiacetic acid), nitrilotriacetic acid(NTA) (nitrilotriaceticacid) and their mixture etc.The content of the above-mentioned amine containing carboxyl is 0.5 to 3 % by weight relative to etchant total amount, is preferably 1 to 2.5 % by weight, more preferably 1.3 to 2.0 % by weight.If the content of the above-mentioned amine containing carboxyl is less than 0.5 % by weight, the danger that the process number that there is substrate likely reduces, if more than 3 % by weight, make the etching speed of molybdenum and molybdenum alloy slack-off and there is the danger that residue produces.
Above-mentioned azole compounds (cyclic amine compound), comprising the dual of copper film or multi-metal film (such as, the duplex film of copper film and molybdenum film) etching in, suppress the etching of copper film and regulate the etching speed of the copper film on top and other metallic membranes of bottom.And cut lengths loss (cut dimension loss, CD loss) of the metal wiring that above-mentioned azole compounds is reduced by etching and is formed, make formed metal wiring effectively can be used as gate line and data line.Above-mentioned azole compounds is 5 yuan of heterocycles (the 5-membered heterocyclic ring) compound containing nitrogen-atoms, such as, be benzotriazole (benzotriazole), amino tetrazole (aminotetrazole, CH
3n
5), amino tetrazole sylvite (aminotetrazole of potassium salt), imidazoles (imidazole), pyrazoles (pyrazole) and their mixture etc., be preferably amino tetrazole.The content of above-mentioned azole compounds is 0.1 to 1 % by weight relative to etchant total amount, is preferably 0.2 to 0.8 % by weight, more preferably 0.3 to 0.6 % by weight.If the content of above-mentioned azole compounds is included in above-mentioned 0.1 to 1 % by weight, suitable etching speed and excellent distribution planeness can be obtained, if above-mentioned azole compounds is not contained in etching solution or content is less than 0.1 % by weight, then there is following danger due to the etching speed of copper can not be regulated: over etching occurs; Or CD loss becomes large; Or distribution planeness reduces and causes serious problem when being applicable to a large amount of production technique; Or the etching outline of the metal wiring formed is deteriorated, if the content of above-mentioned azole compounds is more than 1 % by weight, then etching speed slows down, thus can elongate the time of etch process.
Above-mentioned phosphate compound or its salt play the etching speed regulating copper and molybdenum and copper and molybdenum alloy, or the effect of the cone angle of reduction copper.As the concrete example of above-mentioned phosphate compound or its salt, there is H
3pO
2, H
3pO
3, H
3pO
4, instead of above-mentioned H with sodium (Na), potassium (K), lithium (Li), ammonium (NH4)
3pO
2, H
3pO
3, H
3pO
4in the salt of hydrogen atom (H) and their mixture etc., preferably can use phosphite.The content of above-mentioned phosphate compound or its salt is 0.01 to 2 % by weight relative to etchant total amount, is preferably 0.1 to 1.5 % by weight, more preferably 0.3 to 1 % by weight.If the content of above-mentioned phosphate compound or its salt is less than 0.01 % by weight, then exist following dangerous: cause the etching speed of copper to reduce; Or the etching speed of lower film and molybdenum and molybdenum alloy increases and produces groove (undercut, the phenomenon that lower film (or substrate) excessively caves in), if the content of above-mentioned phosphate compound or its salt is more than 2 % by weight, then the etching speed of copper excessively increases and is difficult to regulate in technique, and the etching speed of lower film and above-mentioned molybdenum and molybdenum alloy reduces and likely produces residue.
Above-mentioned vitriol plays a part regulate the etching speed of copper and reduce cone angle, as the concrete example of above-mentioned vitriol, has the compound of the combination by H2SO4 or SO4 and ammonium (NH4), passes through SO
4with compound and their mixture etc. of the combination of metal A l, Fe, Sb, Ba, Be, Cd, Cs, Ca, Ce, Cr, Co, Cu, Ni, K, Ag, Na, Sr, Sn, Zn, Zr.The content of above-mentioned vitriol is 0.1 to 3 % by weight relative to etchant total amount, is preferably 0.5 to 3 % by weight, more preferably 1 to 2.5 % by weight.If the content of above-mentioned vitriol is less than 0.1 % by weight, cone angle increases, if more than 3 % by weight, cone angle excessively reduces and likely brings problem to technique.
In etchant according to the present invention, remaining composition is water, is preferably deionized water (deionized water, DI), distilled water etc.Etchant according to the present invention, in the scope of the object and effect that reach invention, can contain the common additive such as pH adjusting agent, sanitas as required further.Etchant according to the present invention is prepared by known any means.Such as, above-mentioned fluorine cpd, amine containing carboxyl, azole compounds, phosphate compound or its salt and vitriol etc. can be added to after in the aqueous medium such as deionized water, distilled water according to desired concn, add the above-mentioned hydrogen peroxide suitable with required concentration, and prepare composition of the present invention.
Be used for etching metal film according to etchant of the present invention and form the metal wiring of semiconductor circuit.As the metallic membrane etched by composition of the present invention, the single metallic membrane comprising copper (Cu), the alloy film comprising tin-copper alloy film WU can be enumerated and comprise the multiple film etc. of the copper film as upper membrane and at least more than one the molybdenum film as lower film and molybdenum alloy film etc.And, when etching above-mentioned multiple film, above-mentioned upper membrane and above-mentioned lower film can be etched in the lump.
According to metal wiring formation method of the present invention, in the unicircuit manufacturing semi-conductor etc., substrate is formed the metallic membranes such as the multiple film be made up of the single film of above-mentioned copper or copper/molybdenum and copper/molybdenum alloy, and form photo-resist pattern on above-mentioned metallic membrane.Then, above-mentioned photo-resist pattern is used as mask, and makes etchant of the present invention and above-mentioned metal diaphragm contacts and etch above-mentioned metallic membrane, thus metal wiring such as gate electrode or source-drain electrode can be formed.
The present invention is further described below by specific embodiment.Following embodiment is intended to illustrate the present invention, and the present invention is not limited to following embodiment.
The preparation of [embodiment 1 ~ 5, comparative example 1 ~ 5] etchant
The etchant (embodiment 1 ~ 5, comparative example 1 ~ 5) comprising the compound shown in following table 1 and all the other water of % by weight (deionized water, deionized water) has been prepared in order to evaluate the etching performance of etchant.
Table 1
The evaluation of [embodiment 1 ~ 5, comparative example 1 ~ 5] etchant
Copper/molybdenum and copper/molybdenum alloy duplex film form photo-resist pattern, and with the etchant of embodiment 1 ~ 5 and comparative example 1 ~ 5, (overetching) is etched to the mistake that metallic membrane has carried out more than 60% (with time for benchmark).The cross section of the metallic membrane utilizing sem observation to etch, following table 2 shows the residue of etching speed, cut lengths deviation (CD bias, cut dimensionbias), cone angle and molybdenum and molybdenum alloy.Cut lengths deviation (CD bias) refers to the distance between photo-resist end of pattern and copper film end, it should be 0.5 to 0.7 μm to carry out little and uniform taper etching (taper etching) of difference of height, with regard to suitable etching speed, with copper film be benchmark should have roughly 75 to
the speed of/sec.And inclination angle when cone angle is the side observation from etched metallic membrane, it should be 45 to 50 °, and should not occur the residue of molybdenum (Mo) or molybdenum alloy (Mo-alloy).
Table 2
-very excellent: (etching speed: 75 to
/ sec, cut lengths deviation (CD bias): 0.5 to 0.79 μm, cone angle: 45 to 50 °, the residue of Mo or Mo-Alloy: X)
-excellent: (etching speed: 65 to
/ sec, cut lengths deviation (CD bias): 0.8 to 0.99 μm, cone angle: 51 to 55 °)
-bad: (etching speed:
/ below sec or
/ more than sec, cut lengths deviation (CDbias): more than 1.0 μm, cone angle: more than 56 °, the residue of Mo or Mo-Alloy: O)
Fig. 1 shows the electron scanning micrograph of the etching characteristic according to one embodiment of the invention and comparative example.With reference to above-mentioned table 2 and Fig. 1, in embodiment 1 and embodiment 2, shown etching characteristic is all very excellent, when employing embodiment 3 of hypophosphite, etching speed is than slow when employing the phosphite of same amount, in the embodiment 4 adding vitriol, the cut lengths deviation (CD-bias) of copper film has had increase.When embodiment 5, increase Oil repellent and prevent the residue of content owing to increasing the amine containing carboxyl and the molybdenum (Mo) that likely produces or molybdenum alloy (Mo-alloy).But, when reducing over the content of hydrogen oxide and azole compounds as the comparative example 1 beyond etching solution ratio range, etching speed is obviously slow, cone angle diminishes, and create molybdenum (Mo) or molybdenum alloy (Mo-alloy) residue, in the comparative example 2 of content adding the amine containing carboxyl, create a large amount of molybdenums (Mo) or molybdenum alloy (Mo-alloy) residue.In the phosphatic situation of not adding phosphite or employing more than 2% as comparative example 3 and comparative example 4, create down groove (under-cut) in bottom due to the etching speed of the molybdenum of the copper film on top and bottom (Mo) or molybdenum alloy (Mo-alloy) suitably can not be regulated, or create the residue crossing etching and molybdenum (Mo) or molybdenum alloy (Mo-alloy) of copper film.And in the comparative example 5 not using vitriol, cone angle increases and has occurred the problem with unfavorable cone angle.
The keeping estimation of stability of etchant
Prepare the composition of embodiment 1, in order to evaluate keeping stability and the etching performance for process number, respectively 18 DEG C (low temperature keeping) taken care of 30 days, taken care of 15 days 27 DEG C (normal temperature keepings), the results are shown in following table 3.
Table 3
Fig. 2 show according to the etchant of one embodiment of the invention, with the electron scanning micrograph of the etching characteristic of keeping number of days.As shown in above-mentioned table 3 and Fig. 2, utilize according to etchant of the present invention respectively low temperature (18 DEG C) taken care of 30 days, taken care of 15 days at normal temperature (27 DEG C), its result etching characteristic is also unchanged, maintains and performance like preliminary phase, does not also produce precipitate.
For the etching performance evaluation of the process number of etchant
Prepare the composition of embodiment 1, in order to evaluate the etching performance for process number, cupric ion having been polluted 5 hours altogether with the speed of 1000ppm/h, the results are shown in following table 4.
Table 4
Fig. 3 show according to the etchant of one embodiment of the invention, for the electron scanning micrograph of the etching performance of process number.Utilize etchant according to the present invention to carry out crossing etching to copper/molybdenum alloy duplex film substrate, its result, as shown in above-mentioned table 4 and Fig. 3, can be confirmed till the concentration of cupric ion reaches 5000ppm, and etching characteristic is also unchanged.Like this, also can maintain and preliminary phase performance together even if etch multiple copper/molybdenum alloy duplex film in the lump according to etchant of the present invention.
Claims (9)
1. a metal wiring etchant, is characterized in that, comprises:
The hydrogen peroxide of 15 to 25 % by weight;
The fluorine cpd of 0.1 to 1 % by weight;
The amine containing carboxyl of 0.5 to 3 % by weight;
The azole compounds of 0.1 to 1 % by weight;
The phosphate compound of 0.01 to 2 % by weight or its salt;
The vitriol of 0.1 to 3 % by weight; And,
All the other water of % by weight.
2. metal wiring etchant according to claim 1, is characterized in that,
Above-mentioned fluorine cpd are selected from by HF (hydrofluoric acid), NaF, NaHF
2, NH
4f (Neutral ammonium fluoride), NH
4hF
2, NH
4bF
4, KF, KHF
2, AlF
3, HBF
4, LiF
4, KBF
4, CaF
2, and they mixture composition group in.
3. metal wiring etchant according to claim 1, is characterized in that,
The above-mentioned amine containing carboxyl is selected from the group be made up of L-Ala, aminobutyric acid, L-glutamic acid, iminodiethanoic acid, nitrilotriacetic acid(NTA) and their mixture.
4. metal wiring etchant according to claim 1, is characterized in that,
Above-mentioned azole compounds is selected from the group be made up of benzotriazole, amino tetrazole, amino tetrazole sylvite, imidazoles, pyrazoles and their mixture.
5. metal wiring etchant according to claim 1, is characterized in that,
Above-mentioned phosphate compound or its salt are selected from by H
3pO
2, H
3pO
3, H
3pO
4, instead of above-mentioned H with sodium, potassium, lithium, ammonium
3pO
2, H
3pO
3, H
3pO
4in the salt of hydrogen atom and their mixture composition group in.
6. metal wiring etchant according to claim 5, is characterized in that,
Above-mentioned phosphate compound or its salt are phosphites.
7. metal wiring etchant according to claim 1, is characterized in that,
Above-mentioned vitriol is selected from by passing through H
2sO
4or SO
4with the compound of the combination of ammonium, pass through SO
4in the group formed with compound and their mixture of the combination of metal A l, Fe, Sb, Ba, Be, Cd, Cs, Ca, Ce, Cr, Co, Cu, Ni, K, Ag, Na, Sr, Sn, Zn, Zr.
8. metal wiring etchant according to claim 1, is characterized in that,
Above-mentioned metal wiring is selected from the group be made up of the single metallic membrane comprising copper, the multiple film of alloy film and the copper film comprised as upper membrane and the molybdenum film as lower film and molybdenum alloy film that comprises tin-copper alloy film WU.
9. a metal wiring formation method, is characterized in that, comprising:
Substrate is formed the step of metallic membrane;
Above-mentioned metallic membrane is formed the step of photo-resist pattern; And,
Above-mentioned photo-resist pattern is used as mask, and makes etchant and above-mentioned metal diaphragm contacts and the step of etching metal film,
Above-mentioned etchant comprises: the hydrogen peroxide of 15 to 25 % by weight; The fluorine cpd of 0.1 to 1 % by weight; The amine containing carboxyl of 0.5 to 3 % by weight; The azole compounds of 0.1 to 1 % by weight; The phosphate compound of 0.01 to 2 % by weight or its salt; The vitriol of 0.1 to 3 % by weight; And, all the other water of % by weight.
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| KR10-2013-0124655 | 2013-10-18 |
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| KR102384594B1 (en) * | 2016-06-08 | 2022-04-08 | 동우 화인켐 주식회사 | Manufacturing method of an array substrate for display device |
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| CN101684557A (en) * | 2008-09-26 | 2010-03-31 | 韩国泰科诺赛美材料株式会社 | Copper, copper/molybdenum, or copper/molybdenum alloy electrode etching solution for use in liquid crystal display system |
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| MY152247A (en) * | 2007-12-21 | 2014-09-15 | Wako Pure Chem Ind Ltd | Etching agent, etching method and liquid for preparing etching agent |
| JP5406556B2 (en) * | 2009-02-23 | 2014-02-05 | 関東化学株式会社 | Etching composition for metal laminate film |
| US9365770B2 (en) * | 2011-07-26 | 2016-06-14 | Mitsubishi Gas Chemical Company, Inc. | Etching solution for copper/molybdenum-based multilayer thin film |
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| US20040266188A1 (en) * | 1999-12-27 | 2004-12-30 | Renesas Technology Corp. | Polishing method, metallization fabrication method, method for manufacturing semiconductor device and semiconductor device |
| KR20060099089A (en) * | 2005-03-10 | 2006-09-19 | 엘지.필립스 엘시디 주식회사 | Etchant for metal layers and method for etching metal layers using the same and method for fabricating liquid crystal display device using the etchant |
| CN101684557A (en) * | 2008-09-26 | 2010-03-31 | 韩国泰科诺赛美材料株式会社 | Copper, copper/molybdenum, or copper/molybdenum alloy electrode etching solution for use in liquid crystal display system |
Cited By (12)
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| CN107287593A (en) * | 2016-03-30 | 2017-10-24 | 东友精细化工有限公司 | The etchant of the film containing molybdenum and the manufacture method using its array substrate for display device |
| CN107287593B (en) * | 2016-03-30 | 2019-05-21 | 东友精细化工有限公司 | The manufacturing method of the etchant of the film containing molybdenum and the array substrate for display device using it |
| CN107630219A (en) * | 2016-07-19 | 2018-01-26 | 东友精细化工有限公司 | The manufacture method of metal film etchant and array substrate for display device |
| CN107630219B (en) * | 2016-07-19 | 2020-01-24 | 东友精细化工有限公司 | Metal film etching solution composition and method for manufacturing array substrate for display device |
| CN107653451A (en) * | 2016-07-26 | 2018-02-02 | 三星显示有限公司 | Etchant and the metal pattern manufacture method for using said composition |
| CN107653451B (en) * | 2016-07-26 | 2020-09-15 | 三星显示有限公司 | Etching solution composition and method for manufacturing metal pattern using the same |
| CN112853357A (en) * | 2019-11-12 | 2021-05-28 | 东进世美肯株式会社 | Etching solution composition not containing phosphoric acid and method for forming metal wiring using the same |
| CN114075669A (en) * | 2020-08-10 | 2022-02-22 | 东友精细化工有限公司 | Etchant composition, method for forming wiring, and method for manufacturing array substrate for liquid crystal display device |
| CN114381733A (en) * | 2020-10-19 | 2022-04-22 | 东友精细化工有限公司 | Etching solution composition and method for manufacturing array substrate for display device using same |
| CN112410789A (en) * | 2020-11-04 | 2021-02-26 | Tcl华星光电技术有限公司 | Metal wiring etching solution composition and application thereof |
| CN112981404A (en) * | 2021-02-05 | 2021-06-18 | 四川和晟达电子科技有限公司 | Titanium alloy etching solution composition and use method thereof |
| CN112981404B (en) * | 2021-02-05 | 2022-10-28 | 四川和晟达电子科技有限公司 | Titanium alloy etching solution composition and use method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113061891A (en) | 2021-07-02 |
| KR20150045220A (en) | 2015-04-28 |
| KR102279498B1 (en) | 2021-07-21 |
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