CN104561898A - Method for depositing wearing layer of glass window film and glass window film - Google Patents
Method for depositing wearing layer of glass window film and glass window film Download PDFInfo
- Publication number
- CN104561898A CN104561898A CN201510040706.5A CN201510040706A CN104561898A CN 104561898 A CN104561898 A CN 104561898A CN 201510040706 A CN201510040706 A CN 201510040706A CN 104561898 A CN104561898 A CN 104561898A
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- CN
- China
- Prior art keywords
- wearing layer
- fenestrated membrane
- substrate
- ceramic target
- window film
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
Abstract
The invention provides a method for depositing a wearing layer of a glass window film and the glass window film. The method for depositing the wearing layer of the glass window film comprises the following steps: putting a substrate and a ceramic target into a vacuum chamber, and introducing argon into the vacuum chamber; and bombarding the surface of the ceramic target under the action of an electric field by argon ions generated after collision between the argon and electrons generated by the electric field to sputter the ceramic target, and depositing a film on the substrate to form the wearing layer of the glass window film. The wearing layer is deposited by a magnetron sputtering process, so that structural compactness, thickness uniformity and hardness reinforcement of the wearing layer of the window film can be realized; the wearing layer does not need to be baked at a high temperature or cured with ultraviolet, so that the production process of the wearing layer of the window film is simplified and the material is saved; and the glass window film can achieve high hardness and light transmission with low structural thickness, so that the performance requirements of the surface of the window film for wearing resistance and scratch resistance are met.
Description
Technical field
The present invention relates to nano thin-film preparation technology and device application field, particularly about a kind of method and glass fenestrated membrane of deposit glass fenestrated membrane wearing layer.
Background technology
Fenestrated membrane is widely used in automotive window and building glass, by selective resistance every, through or sunlight reflection in ultraviolet light, visible rays and Infrared, reduce in car and room temp, thus realize energy-conserving and environment-protective.Current fenestrated membrane wearing layer both domestic and external to adopt on transparent polyethylene plastic film substrate the slurries such as coating silica, silicon nitride and resin mostly, and then by hyperthermia drying, the techniques such as ultraviolet curing form wearing layer.This coating method prepares the method complicated process of preparation of wearing layer, and very large to the consumption of slurry, wearing layer structure comparison loosens, and thicker wearing layer structure also reduces the transmittance of fenestrated membrane in visible region accordingly.
Coating method forms the technique of wearing layer itself can produce a large amount of waste gas containing objectionable constituent, and these waste gas through pyrolytic decomposition, and just will can enter air after cooling, for high costs fenestrated membrane manufacturing enterprise.And at configuration wearing layer slurry, slurry is coated with, the waste water containing toxic ingredient and waste gas can be produced in off gas treatment and waste-liquid cleaning process, cause environmental pollution.Along with the development of industrialization society, environment protection and energy-conserving and environment-protective are subject to people's attention day by day, and fenestrated membrane is as a kind of product of energy-conserving and environment-protective; it how is made to save cost in process of production; Simplified flowsheet, accomplishes green production, is the problem that fenestrated membrane industry personage unanimously pays close attention to.
Summary of the invention
To achieve these goals, the invention provides a kind of method and glass fenestrated membrane of deposit glass fenestrated membrane wearing layer, add strengthening with the compact structure, the thickness uniformizing and hardness that realize fenestrated membrane wearing layer, simplify the production technique of fenestrated membrane wearing layer, save material.
To achieve these goals, embodiments provide a kind of method of deposit glass fenestrated membrane wearing layer, the method of described deposit glass fenestrated membrane wearing layer comprises: a substrate and a ceramic target are positioned in a vacuum chamber, and pass into argon gas in described vacuum chamber;
The argon ion generated after the electronics that argon gas and electric field produce collides bombards described ceramic target surface under described electric field action, described ceramic target is sputtered, deposit film over the substrate, as glass fenestrated membrane wearing layer.
In one embodiment, described ceramic target is the solid ceramic target that purity is greater than 99.99%.
In one embodiment, described solid ceramic target is SiO 2-ceramic target or silicon nitride ceramics target.
In one embodiment, described substrate is plastic, paper substrate, glass substrate or sheet metal substrate.
In one embodiment, the vacuum tightness of described vacuum chamber remains on 2Pa.
In one embodiment, by the sedimentation rate of film described in the power regulation that regulates magnetron sputtering.
In one embodiment, described vacuum chamber is multiple independent vacuum chambers be interconnected.
To achieve these goals; the embodiment of the present invention additionally provides a kind of glass fenestrated membrane, and described glass fenestrated membrane comprises: wearing layer prepared by the release film from top to bottom combined successively, acrylate glue adhensive layer, protective film, acrylate glue adhensive layer, heat-insulating function layer, transparent polyethylene plastic film substrate and the method by above-mentioned deposit glass fenestrated membrane wearing layer.
In one embodiment, the thickness of described wearing layer is 100nm.
In one embodiment, the thickness of described wearing layer is 50nm.
The present invention carries out the deposition of wearing layer by magnetron sputtering technique, the compact structure of fenestrated membrane wearing layer can be realized, thickness uniformizing and hardness adds strengthening, and this wearing layer is without the need to high bake and ultraviolet curing, simplify the production technique of fenestrated membrane wearing layer, save material, in addition, make glass fenestrated membrane can reach higher hardness and transmittance with thinner structural thickness, thus realize the performance requriements of fenestrated membrane surface abrasionproof scratch resistance.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the method flow diagram of the deposit glass fenestrated membrane wearing layer of the embodiment of the present invention;
Fig. 2 is the structural representation of the glass fenestrated membrane of the embodiment of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
As shown in Figure 1, the embodiment of the present invention provides a kind of method of deposit glass fenestrated membrane wearing layer, and the method for described deposit glass fenestrated membrane wearing layer comprises:
S101 a: substrate and a ceramic target are positioned in a vacuum chamber, and pass into argon gas in vacuum chamber;
S102: the argon ion generated after the electronics that argon gas and electric field produce collides bombards described ceramic target surface under described electric field action, described ceramic target is sputtered, deposit film over the substrate, as glass fenestrated membrane wearing layer.
Flow process is as shown in Figure 1 known, and the present invention, by the method for magnetron sputtering, at the material of deposited on substrates ceramic target, forms film, as glass fenestrated membrane wearing layer.With form wearing layer by slurries such as coating silica, silicon nitride and resins in prior art and compare, the compact structure of fenestrated membrane wearing layer can be realized, thickness uniformizing and hardness adds strengthening, and this wearing layer is without the need to high bake and ultraviolet curing, simplify the production technique of fenestrated membrane wearing layer, save material, in addition, make glass fenestrated membrane can reach higher hardness and transmittance with thinner structural thickness, thus realize the performance requriements of fenestrated membrane surface abrasionproof scratch resistance.
This vacuum chamber is multiple independent vacuum chambers be interconnected, before deposit film, substrate and ceramic target is needed to be positioned in this vacuum chamber, then in vacuum chamber, a certain amount of argon gas is passed into, under the vacuum tightness of vacuum chamber remains on predetermined pressure (such as pressure remains on 2Pa).Under vacuum conditions, adopt magnetron sputtering technique, under electric field action, electronics and ar atmo high velocity impact, make ar atmo ionize, and the argon ion bombardment ceramic target surface that ionization produces, makes ceramic target sputter, thus form film on substrate.By regulating the power of magnetron sputtering, the sedimentation rate of film can be regulated.This film can as glass fenestrated membrane wearing layer.
Ceramic target generally selects purity to be greater than the solid ceramic target of 99.99%, and when specifically implementing, solid ceramic target can be SiO 2-ceramic target or silicon nitride ceramics target, and the present invention is not as limit.
Substrate can be selected multiple, and can be such as plastic, paper substrate, glass substrate or sheet metal substrate etc., the present invention be as limit.
The method of deposit glass fenestrated membrane wearing layer of the present invention, employing radio frequency, medium frequency magnetron sputtering technology realize the sputtering sedimentation of high-purity target in vacuum chamber, can greatly enhance productivity, ensure the quality of institute deposit thin film layers, effectively overcome traditional coating process and prepare in the process of wearing layer and consume a large amount of slurry, film forming thickness is uneven, film layer structure is loose problem.In addition, the present invention under vacuum conditions, adopts magnetron sputtering technique disposable formation wearing layer, does not need the processing carrying out subsequent technique, thus avoids the off gas treatment problem that high bake causes, and saves the expensive device required for ultraviolet curing.The present invention adopts purity to be greater than the solid ceramic target of 99.99%, a certain amount of argon gas is passed in vacuum chamber, under the effect of high-velocity electrons, realize the ionization of argon gas, argon ion bombardment target material surface, make it sputtering, can at the wearing layer that substrate surface forms compact structure, thickness uniformizing and hardness adds strengthening.Particularly the present invention adopts multiple vacuum chamber be interconnected to carry out the deposition of silicon-dioxide, silicon nitride etc. simultaneously, can improve efficiency and the homogeneity of rete formation further.Adopt the present invention, in vacuum chamber, be equipped with corresponding flexible substrate winding apparatus or the automatic more exchange device of rigid substrate, can serialization deposition be carried out, thus realize suitability for industrialized production.
The method of deposit glass fenestrated membrane wearing layer for a better understanding of the present invention, is described below in conjunction with several specific embodiment.
Embodiment 1
This embodiment for substrate, adopts the SiO 2-ceramic target that purity is greater than 99.99% with transparent polyethylene plastics film.In vacuum chamber, pass into a certain amount of argon gas, vacuum tightness remains on 2Pa.Under vacuum conditions, high-strength electric field produces high-velocity electrons, high-velocity electrons and ar atmo bump against, make ar atmo be ionized into argon ion and new electronics, argon ion flies to SiO 2-ceramic target at a high speed under the effect of high-strength electric field, and with high-energy bombardment SiO 2-ceramic target material surface, SiO 2-ceramic target is sputtered, neutral silicon dioxide molecules is deposited in transparent polyethylene plastic, forms film, as glass fenestrated membrane wearing layer.The adjustment of silica membrane sedimentation rate can be realized easily by the adjustment of magnetron sputtering power.This film typical thickness be 100nm, sedimentation rate remains on 3 ((nm) (m/min))/(Kw/m).
Embodiment 2
This embodiment take glass as substrate, adopts the SiO 2-ceramic target that purity is greater than 99.99%.In vacuum chamber, pass into a certain amount of argon gas, vacuum tightness remains on 2Pa.Under vacuum conditions, high-strength electric field produces high-velocity electrons, high-velocity electrons and ar atmo bump against, make ar atmo be ionized into argon ion and new electronics, argon ion flies to silicon-dioxide target at a high speed under high-strength electric field effect, and with high-energy bombardment SiO 2-ceramic target material surface, SiO 2-ceramic target is sputtered, neutral silicon dioxide molecules is deposited in transparent glass substrate, forms film, as glass fenestrated membrane wearing layer.The adjustment of silica membrane sedimentation rate can be realized easily by the adjustment of magnetron sputtering power.This film typical thickness be 50nm, sedimentation rate remains on 3 ((nm) (m/min))/(Kw/m).
Embodiment 3
This embodiment for substrate, adopts the silicon nitride ceramics target that purity is greater than 99.99% with transparent polyethylene plastics film.In vacuum chamber, pass into a certain amount of argon gas, vacuum tightness remains on 2Pa.Under vacuum conditions, high-strength electric field produces high-velocity electrons, high-velocity electrons and ar atmo bump against, make ar atmo be ionized into argon ion and new electronics, argon ion flies to silicon nitride target at a high speed under high-strength electric field effect, and with high-energy bombardment silicon nitride target material surface, silicon nitride target is sputtered, neutral silicon nitride molecule deposition, in transparent polyethylene plastic, forms film, as glass fenestrated membrane wearing layer.The adjustment of silicon nitride film sedimentation rate can be realized easily by the adjustment of magnetron sputtering power.This film typical thickness be 50nm, sedimentation rate remains on 2.3 ((nm) (m/min))/(Kw/m).This silicon nitride film may be used for fenestrated membrane wearing layer and makes.
Embodiment 4
This embodiment take transparent glass as substrate, adopts the silicon nitride ceramics target that purity is greater than 99.99%.In vacuum chamber, pass into a certain amount of argon gas, vacuum tightness remains on 2Pa.Under vacuum conditions, high-strength electric field produces high-velocity electrons, high-velocity electrons and ar atmo bump against, make ar atmo be ionized into argon ion and new electronics, argon ion flies to silicon nitride target at a high speed under high-strength electric field effect, and with high-energy bombardment silicon nitride target material surface, silicon nitride target is sputtered, neutral silicon nitride molecule deposition, in transparent glass substrate, forms film, as glass fenestrated membrane wearing layer.The adjustment of silicon nitride film sedimentation rate can be realized easily by the adjustment of magnetron sputtering power.This film typical thickness be 50nm, sedimentation rate remains on 2.3 ((nm) (m/min))/(Kw/m).This silicon nitride film may be used for fenestrated membrane wearing layer and makes.
In sum, the method of deposit glass fenestrated membrane wearing layer of the present invention, processing method is simple, easy to operate, production cost is low, can realize the compact structure of high quality fenestrated membrane wearing layer on the substrates such as plastics, paper, glass, sheet metal, thickness uniformizing and hardness adds strengthening, be equipped with corresponding flexible substrate winding apparatus or the automatic more exchange device of rigid substrate, serialization deposition can be carried out, thus realize suitability for industrialized production, existing coating method fenestrated membrane wearing layer depositing operation can be substituted.
As shown in Figure 2; the embodiment of the present invention provides a kind of glass fenestrated membrane, and described glass fenestrated membrane comprises: the release film 1 from top to bottom combined successively, acrylate glue adhensive layer 2, protective film 3, acrylate glue adhensive layer 4, heat-insulating function layer 5, transparent polyethylene plastic film substrate 6 and wearing layer 7.
In one embodiment, the thickness of described wearing layer is 100nm.
In another embodiment, the thickness of described wearing layer is 50nm.
This wearing layer 7 is the films obtained by the method for the deposit glass fenestrated membrane wearing layer shown in Fig. 1.Known by the above-mentioned description to Fig. 1, use this wearing layer, the compact structure of fenestrated membrane wearing layer can be realized, thickness uniformizing and hardness adds strengthening, and this wearing layer is without the need to high bake and ultraviolet curing, simplify the production technique of fenestrated membrane wearing layer, save material, in addition, make glass fenestrated membrane can reach higher hardness and transmittance with thinner structural thickness, thus realize the performance requriements of fenestrated membrane surface abrasionproof scratch resistance.Describe technique and the effect of wearing layer 7 in the description of the above-mentioned method to Fig. 1 deposit glass fenestrated membrane wearing layer in detail, be no longer described in detail herein.
Apply specific embodiment in the present invention to set forth principle of the present invention and embodiment, the explanation of above embodiment just understands method of the present invention and core concept thereof for helping; Meanwhile, for one of ordinary skill in the art, according to thought of the present invention, all will change in specific embodiments and applications, in sum, this description should not be construed as limitation of the present invention.
Claims (10)
1. a method for deposit glass fenestrated membrane wearing layer, is characterized in that, the method for described deposit glass fenestrated membrane wearing layer comprises:
One substrate and a ceramic target are positioned in a vacuum chamber, and pass into argon gas in described vacuum chamber;
The argon ion generated after the electronics that argon gas and electric field produce collides bombards described ceramic target surface under described electric field action, described ceramic target is sputtered, deposit film over the substrate, as glass fenestrated membrane wearing layer.
2. the method for deposit glass fenestrated membrane wearing layer according to claim 1, is characterized in that, described ceramic target is the solid ceramic target that purity is greater than 99.99%.
3. the method for deposit glass fenestrated membrane wearing layer according to claim 2, is characterized in that, described solid ceramic target is SiO 2-ceramic target or silicon nitride ceramics target.
4. the method for deposit glass fenestrated membrane wearing layer according to claim 1, is characterized in that, described substrate is plastic, paper substrate, glass substrate or sheet metal substrate.
5. the method for deposit glass fenestrated membrane wearing layer according to claim 1, it is characterized in that, the vacuum tightness of described vacuum chamber remains on 2Pa.
6. the method for deposit glass fenestrated membrane wearing layer according to claim 1, is characterized in that, by the sedimentation rate of film described in the power regulation that regulates magnetron sputtering.
7. the method for deposit glass fenestrated membrane wearing layer according to claim 1, described vacuum chamber is multiple independent vacuum chambers be interconnected.
8. a glass fenestrated membrane; it is characterized in that, described glass fenestrated membrane comprises: the release film from top to bottom combined successively, acrylate glue adhensive layer, protective film, acrylate glue adhensive layer, heat-insulating function layer, transparent polyethylene plastic film substrate and the wearing layer prepared by method according to claim 1.
9. glass fenestrated membrane according to claim 8, is characterized in that, the thickness of described wearing layer is 100nm.
10. glass fenestrated membrane according to claim 8, is characterized in that, the thickness of described wearing layer is 50nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510040706.5A CN104561898A (en) | 2015-01-27 | 2015-01-27 | Method for depositing wearing layer of glass window film and glass window film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201510040706.5A CN104561898A (en) | 2015-01-27 | 2015-01-27 | Method for depositing wearing layer of glass window film and glass window film |
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| CN104561898A true CN104561898A (en) | 2015-04-29 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201510040706.5A Pending CN104561898A (en) | 2015-01-27 | 2015-01-27 | Method for depositing wearing layer of glass window film and glass window film |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107698790A (en) * | 2016-08-05 | 2018-02-16 | 法国圣戈班玻璃公司 | Film and its manufacture method and vehicle window on glass |
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| JPH09156025A (en) * | 1995-11-30 | 1997-06-17 | Toppan Printing Co Ltd | Infrared ray shielding film |
| JP2011122196A (en) * | 2009-12-09 | 2011-06-23 | Ulvac Japan Ltd | Window glass for vehicle and method of manufacturing the same |
| CN201941191U (en) * | 2010-11-27 | 2011-08-24 | 比亚迪股份有限公司 | Multilayer film and adhesive film |
| CN102229787A (en) * | 2011-05-16 | 2011-11-02 | 常州山由帝杉防护材料制造有限公司 | Thermal-insulation window film and preparation method thereof |
| CN202390355U (en) * | 2011-12-09 | 2012-08-22 | 斯迪克新型材料（江苏）有限公司 | Anti-scratching wear-resistance protective film |
| CN102839349A (en) * | 2012-09-12 | 2012-12-26 | 大连交通大学 | Method for preparing SiO2 film through radio frequency method |
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2015
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Patent Citations (6)
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| JPH09156025A (en) * | 1995-11-30 | 1997-06-17 | Toppan Printing Co Ltd | Infrared ray shielding film |
| JP2011122196A (en) * | 2009-12-09 | 2011-06-23 | Ulvac Japan Ltd | Window glass for vehicle and method of manufacturing the same |
| CN201941191U (en) * | 2010-11-27 | 2011-08-24 | 比亚迪股份有限公司 | Multilayer film and adhesive film |
| CN102229787A (en) * | 2011-05-16 | 2011-11-02 | 常州山由帝杉防护材料制造有限公司 | Thermal-insulation window film and preparation method thereof |
| CN202390355U (en) * | 2011-12-09 | 2012-08-22 | 斯迪克新型材料（江苏）有限公司 | Anti-scratching wear-resistance protective film |
| CN102839349A (en) * | 2012-09-12 | 2012-12-26 | 大连交通大学 | Method for preparing SiO2 film through radio frequency method |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107698790A (en) * | 2016-08-05 | 2018-02-16 | 法国圣戈班玻璃公司 | Film and its manufacture method and vehicle window on glass |
| CN107698790B (en) * | 2016-08-05 | 2023-10-03 | 法国圣戈班玻璃公司 | Film for glass, method for producing the same, and vehicle window |
| US11814314B2 (en) | 2016-08-05 | 2023-11-14 | Saint-Gobain Glass France | Coating for glass and forming method thereof, and automotive window |
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