CN104561643A - Microalloy for electronic material - Google Patents
Microalloy for electronic material Download PDFInfo
- Publication number
- CN104561643A CN104561643A CN201410816699.9A CN201410816699A CN104561643A CN 104561643 A CN104561643 A CN 104561643A CN 201410816699 A CN201410816699 A CN 201410816699A CN 104561643 A CN104561643 A CN 104561643A
- Authority
- CN
- China
- Prior art keywords
- mass fraction
- parts
- microalloy
- electronic material
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Conductive Materials (AREA)
Abstract
The invention discloses a microalloy for an electronic material. The microalloy comprises the following components in parts by mass: 5-15 parts of nickel, 1-10 parts of magnesium, 1-5 parts of zinc, 2-3 parts of titanium oxide, 2-5 parts of silicon oxide and the balance of Cu and unavoidable impurities, wherein the impurities account for less than 0.25% of the whole microalloy. The strength, the electrical conductivity and the bending processability of the electronic material made of the microalloy are greatly improved; the electronic material has excellent properties in aspects of stress relaxation and soldering wettability.
Description
Technical field
The present invention relates to electronic applications, be specifically related to a kind of electronic material microalloy.
Background technology
For the copper alloy for electronic material for lead frame, terminal, connector etc., as the fundamental characteristics of goods, require that high intensity and high electroconductibility or thermal conductivity have both.And more require the miniaturization of electron device, highly integrated in recent years, therefore require raw-material thin plate, in lead frame, terminal, connector, increase, the narrow space lengthization of pin count etc. develop.Require the complicated of device shape further and improve the reliability in aggregate erection, therefore for the material used, except physical strength and excellent conductivity, also requiring good bending machining type.
Especially, for at middle copper alloys used such as flexible jumpers, in order to carry out high electric current, and junctor is not made to maximize, even if rear wallization also has good bendability, expect electric conductivity and about 650Mpa 0.2% yield strength above of more than 60%IACS.
In recent years, as copper alloy for electronic material, replacement phosphor bronze, brass etc. are in the past the solution strengthening type copper alloy of representative, from the view point of high strength and high conductivity, the usage quantity of time hardening copper alloy increases, and time hardening copper alloy carries out ageing treatment by the supersaturated solid solution of solution treatment, tiny precipitate is disperseed equably, while putting forward heavy alloyed intensity, reduce the solid solution element amount in copper, thus electroconductibility improves.Therefore, as the good mechanical performance such as intensity, elasticity, and the materials'use that electroconductibility, thermal conductivity are good.
It is generally acknowledged that the bendability of alloy is relevant with grain fineness number, grain fineness number is less, bending machining performance is more excellent, but, when being adjusted to little by grain fineness number, even if control manufacturing condition, also easily form the duplex grain structure of mixing non-recrystallization part, its result, produces the problem being called bendability and reducing.
Summary of the invention
Goal of the invention: for above-mentioned prior art Problems existing and deficiency, the object of this invention is to provide a kind of electronic material microalloy.
Technical scheme: the invention discloses a kind of electronic material microalloy, it comprises the silicon oxide of the nickel of mass fraction 5-15 part, the magnesium of mass fraction 1-10 part, the zinc of mass fraction 1-5 part, the titanium oxide of mass fraction 2-3 part and mass fraction 2-5 part; All the other are made up of Cu and inevitable impurity, and the content of impurity in whole microalloy is no more than 0.25%.
As further optimization of the present invention, the present invention comprises the Co of the nickel of mass fraction 5-15 part, the magnesium of mass fraction 1-10 part, the zinc of mass fraction 1-5 part, the titanium oxide of mass fraction 2-3 part, the silicon oxide of mass fraction 2-5 part, the silicochrome of mass fraction 1-5 part, the Ti of mass fraction 2-3 part and mass fraction 2-3 part, all the other are made up of Cu and inevitable impurity, and the content of impurity in whole microalloy is no more than 0.25%.
As further optimization of the present invention, the present invention comprises the Li of the nickel of mass fraction 5-15 part, the magnesium of mass fraction 1-10 part, the zinc of mass fraction 1-5 part, the titanium oxide of mass fraction 2-3 part, the silicon oxide of mass fraction 2-5 part, the Sn of mass fraction 1-2 part, the Mg of mass fraction 0.5-1 part and mass fraction 0.5-1 part, all the other are made up of Cu and inevitable impurity, and the content of impurity in whole microalloy is no more than 0.25%.
As further optimization of the present invention, the present invention comprises the nickel of mass fraction 5-15 part, the magnesium of mass fraction 1-10 part, the zinc of mass fraction 1-5 part, the titanium oxide of mass fraction 2-3 part, the silicon oxide of mass fraction 2-5 part, the Ti of mass fraction 2-3 part, the Fe of mass fraction 1.5-3.5 part, all the other are made up of Cu and inevitable impurity, and the content of impurity in whole microalloy is no more than 0.25%.
Beneficial effect: the equilibrium according to the intensity of the electronic material of gained of the present invention, electroconductibility and bendability improves greatly, and electronic material of the present invention also demonstrates excellent characteristic in stress relaxation characteristics and braze wettability.
Embodiment
The present invention is illustrated further below in conjunction with embodiment.
Embodiment 1:
A kind of electronic material microalloy of the present embodiment, it comprises the nickel of mass fraction 5 parts, the magnesium of mass fraction 1 part, the zinc of mass fraction 1 part, the titanium oxide of mass fraction 2 parts and the silicon oxide of mass fraction 2 parts; All the other are made up of Cu and inevitable impurity, and the content of impurity in whole microalloy is no more than 0.25%.
Embodiment 2:
A kind of electronic material microalloy of the present embodiment, it comprises the nickel of mass fraction 15 parts, the magnesium of mass fraction 10 parts, the zinc of mass fraction 5 parts, the titanium oxide of mass fraction 3 parts and the silicon oxide of mass fraction 5 parts; All the other are made up of Cu and inevitable impurity, and the content of impurity in whole microalloy is no more than 0.25%.
Embodiment 3:
A kind of electronic material microalloy of the present embodiment, it comprises the nickel of mass fraction 10 parts, the magnesium of mass fraction 5 parts, the zinc of mass fraction 3 parts, the titanium oxide of mass parts 2 parts and the silicon oxide of mass fraction 3 parts; All the other are made up of Cu and inevitable impurity, and the content of impurity in whole microalloy is no more than 0.25%.
Embodiment 4:
A kind of electronic material microalloy of the present embodiment, comprise the nickel of mass fraction 5 parts, the magnesium of mass fraction 1 part, the zinc of mass fraction 1 part, the titanium oxide of mass fraction 2 parts, the silicon oxide of mass fraction 2 parts, the silicochrome of mass fraction 1 part, the Ti of mass fraction 2 parts and the Co of mass fraction 2 parts, all the other are made up of Cu and inevitable impurity, and the content of impurity in whole microalloy is no more than 0.25%.
Embodiment 5:
A kind of electronic material microalloy of the present embodiment, comprise the nickel of mass fraction 15 parts, the magnesium of mass fraction 10 parts, the zinc of mass fraction 5 parts, the titanium oxide of mass fraction 3 parts, the silicon oxide of mass fraction 5 parts, the silicochrome of mass fraction 5 parts, the Ti of mass fraction 3 parts and the Co of mass fraction 3 parts, all the other are made up of Cu and inevitable impurity, and the content of impurity in whole microalloy is no more than 0.25%.
Embodiment 6:
A kind of electronic material microalloy of the present embodiment, comprise the nickel of mass fraction 10 parts, the magnesium of mass fraction 5 parts, the zinc of mass fraction 3 parts, the titanium oxide of mass fraction 2 parts, the silicon oxide of mass fraction 3 parts, the silicochrome of mass fraction 3 parts, the Ti of mass fraction 3 parts and the Co of mass fraction 2 parts, all the other are made up of Cu and inevitable impurity, and the content of impurity in whole microalloy is no more than 0.25%.
Embodiment 7:
A kind of electronic material microalloy of the present embodiment, comprise the nickel of mass fraction 5 parts, the magnesium of mass fraction 1 part, the zinc of mass fraction 1 part, the titanium oxide of mass fraction 2 parts, the silicon oxide of mass fraction 2 parts, the Sn of mass fraction 1 part, the Mg of mass fraction 0.5 part and the Li of mass fraction 0.5 part, all the other are made up of Cu and inevitable impurity, and the content of impurity in whole microalloy is no more than 0.25%.
Embodiment 8:
A kind of electronic material microalloy of the present embodiment, comprise the nickel of mass fraction 15 parts, the magnesium of mass fraction 10 parts, the zinc of mass fraction 5 parts, the titanium oxide of mass fraction 3 parts, the silicon oxide of mass fraction 5 parts, the Sn of mass fraction 2 parts, the Mg of mass fraction 1 part and the Li of mass fraction 1 part, all the other are made up of Cu and inevitable impurity, and the content of impurity in whole microalloy is no more than 0.25%.
Embodiment 9:
A kind of copper alloy for electronic material of the present embodiment, comprise the nickel of mass fraction 10 parts, the magnesium of mass fraction 5 parts, the zinc of mass fraction 3 parts, the titanium oxide of mass fraction 2 parts, the silicon oxide of mass fraction 3 parts, the Sn of mass fraction 1 part, the Mg of mass fraction 0.5 part and the Li of mass fraction 0.5 part, all the other are made up of Cu and inevitable impurity, and the content of impurity in whole microalloy is no more than 0.25%.
Embodiment 10:
A kind of electronic material microalloy of the present embodiment, comprise the Fe of the nickel of mass fraction 5 parts, the magnesium of mass fraction 1 part, the zinc of mass fraction 1 part, the titanium oxide of mass fraction 2 parts, the silicon oxide of mass fraction 2 parts, the Ti of mass fraction 2 parts, mass fraction 1.5 parts, all the other are made up of Cu and inevitable impurity, and the content of impurity in whole microalloy is no more than 0.25%.
Embodiment 11:
A kind of electronic material microalloy of the present embodiment, comprise the Fe of the nickel of mass fraction 15 parts, the magnesium of mass fraction 10 parts, the zinc of mass fraction 5 parts, the titanium oxide of mass fraction 3 parts, the silicon oxide of mass fraction 5 parts, the Ti of mass fraction 3 parts, mass fraction 3.5 parts, all the other are made up of Cu and inevitable impurity, and the content of impurity in whole microalloy is no more than 0.25%.
Embodiment 12:
A kind of electronic material microalloy of the present embodiment, comprise the Fe of the nickel of mass fraction 10 parts, the magnesium of mass fraction 5 parts, the zinc of mass fraction 3 parts, the titanium oxide of mass fraction 2 parts, the silicon oxide of mass fraction 3 parts, the Ti of mass fraction 2 parts, mass fraction 2 parts, all the other are made up of Cu and inevitable impurity, and the content of impurity in whole microalloy is no more than 0.25%.
Claims (4)
1. an electronic material microalloy, is characterized in that: it comprises the silicon oxide of the nickel of mass fraction 5-15 part, the magnesium of mass fraction 1-10 part, the zinc of mass fraction 1-5 part, the titanium oxide of mass fraction 2-3 part and mass fraction 2-5 part; All the other are made up of Cu and inevitable impurity, and the content of impurity in whole microalloy is no more than 0.25%.
2. a kind of electronic material microalloy according to claim 1, it is characterized in that: it comprises the Co of the nickel of mass fraction 5-15 part, the magnesium of mass fraction 1-10 part, the zinc of mass fraction 1-5 part, the titanium oxide of mass fraction 2-3 part, the silicon oxide of mass fraction 2-5 part, the silicochrome of mass fraction 1-5 part, the Ti of mass fraction 2-3 part and mass fraction 2-3 part, all the other are made up of Cu and inevitable impurity, and the content of impurity in whole microalloy is no more than 0.25%.
3. a kind of electronic material microalloy according to claim 1, it is characterized in that: it comprises the Li of the nickel of mass fraction 5-15 part, the magnesium of mass fraction 1-10 part, the zinc of mass fraction 1-5 part, the titanium oxide of mass fraction 2-3 part, the silicon oxide of mass fraction 2-5 part, the Sn of mass fraction 1-2 part, the Mg of mass fraction 0.5-1 part and mass fraction 0.5-1 part, all the other are made up of Cu and inevitable impurity, and the content of impurity in whole microalloy is no more than 0.25%.
4. a kind of electronic material microalloy according to claim 1, it is characterized in that: it comprises the nickel of mass fraction 5-15 part, the magnesium of mass fraction 1-10 part, the zinc of mass fraction 1-5 part, the titanium oxide of mass fraction 2-3 part, the silicon oxide of mass fraction 2-5 part, the Ti of mass fraction 2-3 part, the Fe of mass fraction 1.5-3.5 part, all the other are made up of Cu and inevitable impurity, and the content of impurity in whole microalloy is no more than 0.25%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410816699.9A CN104561643A (en) | 2014-12-25 | 2014-12-25 | Microalloy for electronic material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410816699.9A CN104561643A (en) | 2014-12-25 | 2014-12-25 | Microalloy for electronic material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104561643A true CN104561643A (en) | 2015-04-29 |
Family
ID=53078711
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410816699.9A Pending CN104561643A (en) | 2014-12-25 | 2014-12-25 | Microalloy for electronic material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104561643A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112187975A (en) * | 2020-09-17 | 2021-01-05 | 淮安维嘉益集成科技有限公司 | Application of WOFC2 material in manufacturing of FPC (flexible printed circuit) substrate of camera module |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101849027A (en) * | 2007-11-05 | 2010-09-29 | 古河电气工业株式会社 | Copper alloy sheet material |
| CN101981214A (en) * | 2008-03-31 | 2011-02-23 | 古河电气工业株式会社 | Copper alloy material for electric and electronic apparatuses, and electric and electronic components |
-
2014
- 2014-12-25 CN CN201410816699.9A patent/CN104561643A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101849027A (en) * | 2007-11-05 | 2010-09-29 | 古河电气工业株式会社 | Copper alloy sheet material |
| CN101981214A (en) * | 2008-03-31 | 2011-02-23 | 古河电气工业株式会社 | Copper alloy material for electric and electronic apparatuses, and electric and electronic components |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112187975A (en) * | 2020-09-17 | 2021-01-05 | 淮安维嘉益集成科技有限公司 | Application of WOFC2 material in manufacturing of FPC (flexible printed circuit) substrate of camera module |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102560191A (en) | High-performance elastic copper alloy and preparation and processing method thereof | |
| TW201343938A (en) | Cu-Ni-Si type copper alloy | |
| TW201506176A (en) | Copper alloy sheet having excellent conductivity and bending deflection factor | |
| JPH0551671A (en) | High-strength and high-conductivity copper alloy for electronic equipment excellent in bendability and stress relaxation property | |
| JP4916206B2 (en) | Cu-Cr-Si alloy and Cu-Cr-Si alloy foil for electric and electronic parts | |
| JP2014234534A (en) | Copper alloy sheet excellent in conductivity and deflection coefficient | |
| CN104451404A (en) | Stainless steel alloy for electronic material with balanced properties | |
| JP5892974B2 (en) | Copper alloy sheet with excellent conductivity and stress relaxation properties | |
| CN104561643A (en) | Microalloy for electronic material | |
| TWI589715B (en) | Copper alloy strip and with its high-current electronic components and cooling electronic components | |
| CN104404295A (en) | Copper alloy for electronic material | |
| CN104451245A (en) | Copper alloy for electronic material with balanced properties | |
| CN104404328A (en) | Magnesium alloy for electronic material | |
| CN104451432A (en) | Stainless steel alloy for electronic material | |
| JPH07331363A (en) | High strength and high conductivity copper alloy | |
| CN104532064A (en) | Alloy for electronic material | |
| CN104480346A (en) | Tantalum contained copper alloy for electronic material | |
| CN103849793A (en) | Copper alloy composite sheet material used for electric | |
| JP2020002439A (en) | Copper alloy for fuse | |
| CN104451281A (en) | Aluminum alloy for electronic material | |
| JP6294766B2 (en) | Copper alloy material and method for producing the same | |
| JP2014074223A (en) | Copper alloy sheet excellent in conductivity and stress relaxation property | |
| JP2017179503A (en) | Copper alloy sheet excellent in strength and conductivity | |
| JP5525101B2 (en) | Copper alloy sheet with excellent conductivity and stress relaxation properties | |
| JP5352750B1 (en) | Copper alloy sheet with excellent conductivity and bending deflection coefficient |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20150429 |