CN104451281A - Aluminum alloy for electronic material - Google Patents
Aluminum alloy for electronic material Download PDFInfo
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- CN104451281A CN104451281A CN201410816698.4A CN201410816698A CN104451281A CN 104451281 A CN104451281 A CN 104451281A CN 201410816698 A CN201410816698 A CN 201410816698A CN 104451281 A CN104451281 A CN 104451281A
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
- C22C21/02—Alloys based on aluminium with silicon as the next major constituent
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
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Abstract
The invention discloses an aluminum alloy for an electronic material. The aluminum alloy comprises the following components in parts by mass: 5-15 parts by mass of nickel, 1-10 parts by mass of silicon, 1-5 parts by mass of molybdenum, 0.5-1 part by mass of zirconium, 0.5-6 parts by mass of niobium and 2-3 parts of titanium oxide, as well as the balance of aluminum and inevitable impurities. The balance of the strength, electric conductivity and bending processibility of the electronic material obtained according to the invention is greatly improved, and the electronic material also shows excellent properties in the aspects of stress relaxation and brazing material wettability.
Description
Technical field
The present invention relates to electronic applications, be specifically related to a kind of electronic material aluminium alloy.
Background technology
For the electronic material aluminium alloy for lead frame, terminal, connector etc., as the fundamental characteristics of goods, require that high intensity and high electroconductibility or thermal conductivity have both.And more require the miniaturization of electron device, highly integrated in recent years, therefore require raw-material thin plate, in lead frame, terminal, connector, increase, the narrow space lengthization of pin count etc. develop.Require the complicated of device shape further and improve the reliability in aggregate erection, therefore for the material used, except physical strength and excellent conductivity, also requiring good bending machining type.
Especially, for at middle aluminium alloys used such as flexible jumpers, in order to carry out high electric current, and junctor is not made to maximize, even if rear wallization also has good bendability, expect electric conductivity and about 650Mpa 0.2% yield strength above of more than 60%IACS.
In recent years, as electronic material aluminium alloy, replacement phosphorus in the past blue or green aluminium, yellow aluminium etc. are the solution strengthening type aluminium alloy of representative, from the view point of high strength and high conductivity, the usage quantity of time hardening aluminium alloy increases, and time hardening aluminium alloy carries out ageing treatment by the supersaturated solid solution of solution treatment, tiny precipitate is disperseed equably, while putting forward heavy alloyed intensity, reduce the solid solution element amount in aluminium, thus electroconductibility improves.Therefore, as the good mechanical performance such as intensity, elasticity, and the materials'use that electroconductibility, thermal conductivity are good.
It is generally acknowledged that the bendability of alloy is relevant with grain fineness number, grain fineness number is less, bending machining performance is more excellent, but, when being adjusted to little by grain fineness number, even if control manufacturing condition, also easily form the duplex grain structure of mixing non-recrystallization part, its result, produces the problem being called bendability and reducing.
Summary of the invention
Goal of the invention: for above-mentioned prior art Problems existing and deficiency, the object of this invention is to provide a kind of electronic material aluminium alloy.
Technical scheme: the invention discloses a kind of electronic material aluminium alloy, it comprises the nickel of mass fraction 5-15 part, the silicon of mass fraction 1-10 part, the molybdenum of mass fraction 1-5 part, the zirconium of mass fraction 0.5-1 part, mass fraction are the niobium of 0.5-6 part and the titanium oxide of mass fraction 2-3 part; All the other are made up of aluminium and inevitable impurity.
As further optimization of the present invention, the Co of the niobium that the present invention comprises the nickel of mass fraction 5-15 part, the silicon of mass fraction 1-10 part, the molybdenum of mass fraction 1-5 part, the zirconium of mass fraction 0.5-1 part, mass fraction are 0.5-6 part, the titanium oxide of mass fraction 2-3 part, the Cr of mass fraction 1-5 part and mass fraction 2-3 part, all the other are made up of aluminium and inevitable impurity.
As further optimization of the present invention, the Li of the niobium that the present invention comprises the nickel of mass fraction 5-15 part, the silicon of mass fraction 1-10 part, the molybdenum of mass fraction 1-5 part, the zirconium of mass fraction 0.5-1 part, mass fraction are 0.5-6 part, the titanium oxide of mass fraction 2-3 part, the Sn of mass fraction 1-2 part, the Mg of mass fraction 0.5-1 part and mass fraction 0.5-1 part, all the other are made up of aluminium and inevitable impurity.
As further optimization of the present invention, the silicon oxide of the niobium that the present invention comprises the nickel of mass fraction 5-15 part, the silicon of mass fraction 1-10 part, the molybdenum of mass fraction 1-5 part, the zirconium of mass fraction 0.5-1 part, mass fraction are 0.5-6 part, the titanium oxide of mass fraction 2-3 part, the Fe of mass fraction 1.5-3.5 part and mass fraction 1-3 part, all the other are made up of aluminium and inevitable impurity.
Beneficial effect: the equilibrium according to the intensity of the electronic material of gained of the present invention, electroconductibility and bendability improves greatly, and electronic material of the present invention also demonstrates excellent characteristic in stress relaxation characteristics and braze wettability.
Embodiment
The present invention is illustrated further below in conjunction with embodiment.
Embodiment 1:
A kind of electronic material aluminium alloy of the present embodiment, it comprises the nickel of mass fraction 5 parts, the silicon of mass fraction 1 part, the molybdenum of mass fraction 1 part, the zirconium of mass fraction 0.5 part, mass fraction are the niobium of 0.5 part and the titanium oxide of mass fraction 2 parts; All the other are made up of aluminium and inevitable impurity.
Embodiment 2:
A kind of electronic material aluminium alloy of the present embodiment, it comprises the nickel of mass fraction 15 parts, the silicon of mass fraction 10 parts, the molybdenum of mass fraction 5 parts, the zirconium of mass fraction 1 part, mass fraction are the niobium of 6 parts and the titanium oxide of mass fraction 3 parts; All the other are made up of aluminium and inevitable impurity.
Embodiment 3:
A kind of electronic material aluminium alloy of the present embodiment, it comprises the nickel of mass fraction 10 parts, the silicon of mass fraction 5 parts, the molybdenum of mass fraction 3 parts, the zirconium of mass fraction 0.8 part, mass fraction are the niobium of 3.3 parts and the titanium oxide of mass fraction 2.4 parts; All the other are made up of aluminium and inevitable impurity.
Embodiment 4:
A kind of electronic material aluminium alloy of the present embodiment, comprise the nickel of mass fraction 5 parts, the silicon of mass fraction 1 part, the molybdenum of mass fraction 1 part, the zirconium of mass fraction 0.5 part, mass fraction are niobium, the titanium oxide of mass fraction 2 parts, the Cr of mass fraction 1 part and the Co of mass fraction 2 parts of 0.5 part, all the other are made up of aluminium and inevitable impurity.
Embodiment 5:
A kind of electronic material aluminium alloy of the present embodiment, comprise the nickel of mass fraction 15 parts, the silicon of mass fraction 10 parts, the molybdenum of mass fraction 5 parts, the zirconium of mass fraction 1 part, mass fraction are niobium, the titanium oxide of mass fraction 3 parts, the Cr of mass fraction 5 parts and the Co of mass fraction 3 parts of 6 parts, all the other are made up of aluminium and inevitable impurity.
Embodiment 6:
A kind of electronic material aluminium alloy of the present embodiment, comprise the nickel of mass fraction 10 parts, the silicon of mass fraction 5 parts, the molybdenum of mass fraction 3 parts, the zirconium of mass fraction 0.8 part, mass fraction are niobium, the titanium oxide of mass fraction 2.5 parts, the Cr of mass fraction 3 parts and the Co of mass fraction 2.5 parts of 3.3 parts, all the other are made up of aluminium and inevitable impurity.
Embodiment 7:
A kind of electronic material aluminium alloy of the present embodiment, comprise the nickel of mass fraction 5 parts, the silicon of mass fraction 1 part, the molybdenum of mass fraction 1 part, the zirconium of mass fraction 0.5 part, mass fraction be 0.5 part niobium, the titanium oxide of mass fraction 2 parts, the Sn of mass fraction 1 part, the Mg of mass fraction 0.5 part and the Li of mass fraction 0.5 part, all the other are made up of aluminium and inevitable impurity.
Embodiment 8:
A kind of electronic material aluminium alloy of the present embodiment, comprise the nickel of mass fraction 15 parts, the silicon of mass fraction 10 parts, the molybdenum of mass fraction 5 parts, the zirconium of mass fraction 1 part, mass fraction be 6 parts niobium, the titanium oxide of mass fraction 3 parts, the Sn of mass fraction 2 parts, the Mg of mass fraction 1 part and the Li of mass fraction 1 part, all the other are made up of aluminium and inevitable impurity.
Embodiment 9:
A kind of electronic material aluminium alloy of the present embodiment, comprise the nickel of mass fraction 10 parts, the silicon of mass fraction 5 parts, the molybdenum of mass fraction 3 parts, the zirconium of mass fraction 0.6 part, mass fraction be 3.3 parts niobium, the titanium oxide of mass fraction 2.5 parts, the Sn of mass fraction 1.5 parts, the Mg of mass fraction 0.8 part and the Li of mass fraction 0.8 part, all the other are made up of aluminium and inevitable impurity.
Embodiment 10:
A kind of electronic material aluminium alloy of the present embodiment, comprise the nickel of mass fraction 5 parts, the silicon of mass fraction 1 part, the molybdenum of mass fraction 1 part, the zirconium of mass fraction 0.5 part, mass fraction be 0.5 part niobium, the titanium oxide of mass fraction 2 parts, the Fe of mass fraction 1.5 parts and the silicon oxide of mass fraction 1 part, all the other are made up of aluminium and inevitable impurity.
Embodiment 11:
A kind of electronic material aluminium alloy of the present embodiment, comprise the nickel of mass fraction 15 parts, the silicon of mass fraction 10 parts, the molybdenum of mass fraction 5 parts, the zirconium of mass fraction 1 part, mass fraction be 6 parts niobium, the titanium oxide of mass fraction 3 parts, the Fe of mass fraction 3.5 parts and the silicon oxide of mass fraction 3 parts, all the other are made up of aluminium and inevitable impurity.
Embodiment 12:
A kind of electronic material aluminium alloy of the present embodiment, comprise the nickel of mass fraction 10 parts, the silicon of mass fraction 6 parts, the molybdenum of mass fraction 3 parts, the zirconium of mass fraction 0.6 part, mass fraction be 3.3 parts niobium, the titanium oxide of mass fraction 2.5 parts, the Fe of mass fraction 3 parts and the silicon oxide of mass fraction 2 parts, all the other are made up of aluminium and inevitable impurity.
Claims (4)
1. an electronic material aluminium alloy, is characterized in that: it comprises the nickel of mass fraction 5-15 part, the silicon of mass fraction 1-10 part, the molybdenum of mass fraction 1-5 part, the zirconium of mass fraction 0.5-1 part, mass fraction are the niobium of 0.5-6 part and the titanium oxide of mass fraction 2-3 part; All the other are made up of aluminium and inevitable impurity.
2. a kind of electronic material aluminium alloy according to claim 1, it is characterized in that: the Co of the niobium that it comprises the nickel of mass fraction 5-15 part, the silicon of mass fraction 1-10 part, the molybdenum of mass fraction 1-5 part, the zirconium of mass fraction 0.5-1 part, mass fraction are 0.5-6 part, the titanium oxide of mass fraction 2-3 part, the Cr of mass fraction 1-5 part and mass fraction 2-3 part, all the other are made up of aluminium and inevitable impurity.
3. a kind of electronic material aluminium alloy according to claim 1, it is characterized in that: the Li of the niobium that it comprises the nickel of mass fraction 5-15 part, the silicon of mass fraction 1-10 part, the molybdenum of mass fraction 1-5 part, the zirconium of mass fraction 0.5-1 part, mass fraction are 0.5-6 part, the titanium oxide of mass fraction 2-3 part, the Sn of mass fraction 1-2 part, the Mg of mass fraction 0.5-1 part and mass fraction 0.5-1 part, all the other are made up of aluminium and inevitable impurity.
4. a kind of electronic material aluminium alloy according to claim 1, it is characterized in that: the silicon oxide of the niobium that it comprises the nickel of mass fraction 5-15 part, the silicon of mass fraction 1-10 part, the molybdenum of mass fraction 1-5 part, the zirconium of mass fraction 0.5-1 part, mass fraction are 0.5-6 part, the titanium oxide of mass fraction 2-3 part, the Fe of mass fraction 1.5-3.5 part and mass fraction 1-3 part, all the other are made up of aluminium and inevitable impurity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410816698.4A CN104451281A (en) | 2014-12-25 | 2014-12-25 | Aluminum alloy for electronic material |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410816698.4A CN104451281A (en) | 2014-12-25 | 2014-12-25 | Aluminum alloy for electronic material |
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| CN104451281A true CN104451281A (en) | 2015-03-25 |
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| CN201410816698.4A Pending CN104451281A (en) | 2014-12-25 | 2014-12-25 | Aluminum alloy for electronic material |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0892681A (en) * | 1994-09-27 | 1996-04-09 | Sumitomo Electric Ind Ltd | Nitrified aluminum-silicon powder alloy and its production |
| CN101011705A (en) * | 2007-01-31 | 2007-08-08 | 哈尔滨工业大学 | Method for preparation of Yt-containing TiAl intermetallic compound plate material |
| CN101100716A (en) * | 2006-07-03 | 2008-01-09 | 杰出材料科技股份有限公司 | Aluminum with nano composite phase and application thereof |
| JP2009149997A (en) * | 1995-10-12 | 2009-07-09 | Toshiba Corp | Sputter target manufacturing method |
-
2014
- 2014-12-25 CN CN201410816698.4A patent/CN104451281A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0892681A (en) * | 1994-09-27 | 1996-04-09 | Sumitomo Electric Ind Ltd | Nitrified aluminum-silicon powder alloy and its production |
| JP2009149997A (en) * | 1995-10-12 | 2009-07-09 | Toshiba Corp | Sputter target manufacturing method |
| CN101100716A (en) * | 2006-07-03 | 2008-01-09 | 杰出材料科技股份有限公司 | Aluminum with nano composite phase and application thereof |
| CN101011705A (en) * | 2007-01-31 | 2007-08-08 | 哈尔滨工业大学 | Method for preparation of Yt-containing TiAl intermetallic compound plate material |
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Application publication date: 20150325 |