CN104550975A - Method for preparing silicon-aluminum alloy electronic packaging material by virtue of rapid injection molding - Google Patents
Method for preparing silicon-aluminum alloy electronic packaging material by virtue of rapid injection molding Download PDFInfo
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- CN104550975A CN104550975A CN201510054970.4A CN201510054970A CN104550975A CN 104550975 A CN104550975 A CN 104550975A CN 201510054970 A CN201510054970 A CN 201510054970A CN 104550975 A CN104550975 A CN 104550975A
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- 238000000034 method Methods 0.000 title claims abstract description 50
- 229910000838 Al alloy Inorganic materials 0.000 title claims abstract description 24
- 238000004100 electronic packaging Methods 0.000 title claims abstract description 16
- 238000001746 injection moulding Methods 0.000 title abstract description 4
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 title abstract 7
- 239000005022 packaging material Substances 0.000 title abstract 4
- 239000000843 powder Substances 0.000 claims abstract description 26
- 239000011230 binding agent Substances 0.000 claims abstract description 14
- 238000002156 mixing Methods 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 42
- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical compound [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 claims description 24
- 238000012856 packing Methods 0.000 claims description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 238000002347 injection Methods 0.000 claims description 17
- 239000007924 injection Substances 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 229910052782 aluminium Inorganic materials 0.000 claims description 16
- 238000007493 shaping process Methods 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 238000002360 preparation method Methods 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 7
- 238000004891 communication Methods 0.000 claims description 6
- 238000005538 encapsulation Methods 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 238000010276 construction Methods 0.000 claims description 5
- 235000013312 flour Nutrition 0.000 claims description 5
- 230000014759 maintenance of location Effects 0.000 claims description 5
- 238000004377 microelectronic Methods 0.000 claims description 5
- 238000010298 pulverizing process Methods 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 2
- 239000000956 alloy Substances 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 229910045601 alloy Inorganic materials 0.000 abstract description 6
- 238000003754 machining Methods 0.000 abstract description 4
- 238000003801 milling Methods 0.000 abstract description 3
- 238000005245 sintering Methods 0.000 abstract description 2
- 150000001875 compounds Chemical class 0.000 abstract 1
- 230000005484 gravity Effects 0.000 abstract 1
- 238000000227 grinding Methods 0.000 abstract 1
- 239000002131 composite material Substances 0.000 description 12
- 239000000047 product Substances 0.000 description 7
- 238000011161 development Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000007812 deficiency Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910000551 Silumin Inorganic materials 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001540 jet deposition Methods 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 231100000956 nontoxicity Toxicity 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000009718 spray deposition Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
Abstract
The invention relates to a method for preparing a silicon-aluminum alloy electronic packaging material by virtue of rapid injection molding. The silicon-aluminum alloy comprises the following components in percentage by weight: 10%-60% of Si and the balance of Al. The method comprises the following steps of preparing according to the components of the alloy, mixing the prepared silicon-aluminum alloy powder and a binder at a certain ratio in an internal mixer to obtain a uniform compound feedstock, carrying out injection molding on the feedstock to obtain a green body, removing the binder from the green body and sintering to obtain the silicon-aluminum alloy electronic packaging material of which the relative density is greater than 99%. The silicon-aluminum alloy material has the advantages of uniform alloy components and uniform and dense microstructures and can be prepared into the silicon-aluminum alloy electronic packaging material which has continuously adjustable thermal expansion coefficient range of (6-12)*10<-6>/K, the thermal conductivity range of 110-150W/mK and the specific gravity of 1.7-2.6g/cm<3> and complex and diversiform structure, the complicated machining processes such as lathing, milling, planing and grinding are avoided and the method has the advantages of high production efficiency, simple process, low cost, excellent product performance and the like.
Description
Technical field
The present invention relates to aluminium silicon electronic packing material field, be specifically related to a kind of shaping method preparing aluminium silicon electronic packing material of fast injection.
Background technology
21st century science and technology development, especially outstanding performance is exactly the development of electronic science and technology.Along with electronic devices and components are less towards size, the fast development of lighter, the arithmetic speed of quality future development and large scale integrated circuit technology faster, integrated level and the packaging density of IC chip significantly improve, and have higher requirement to electronic package material is also corresponding.Electronic Packaging directly affects the electricity of integrated circuit and device, heat, light and mechanical performance, and key is played a part to the miniaturization of system, therefore require that electronic package material has low-expansion coefficient, low-density, high heat conductance and mechanical performance, simultaneously must have good packaging technology performance, and high reliability and low cost.Electronic package material traditional is thus if aluminium oxide ceramics, low-expansion alloy are as Kovar, beryllium oxide ceramics, aluminium nitride and refractory metal W, the encapsulation requirement of all inadaptable modern advanced microwave such as Mo and composite thereof and hybrid circuit technology, or all there is the shortcomings such as cost is high, shortage of resources, toxicity are large, processability is bad in varying degrees.
Silico-aluminum is as a kind of novel encapsulated material, there is low thermal coefficient of expansion, high thermal conductivity, proportion are low, there is no toxicity, lower material cost, and be easy to processing, can electroplate, aerospace equipment and movement, the light-weighted requirement of calculating communication apparatus can be met simultaneously, the encapsulation of large scale integrated circuit or the encapsulating material as other microelectronic circuits and microwave line can be widely used for.
The preparation method of the routine of current aluminium silicon electronic packing material has melting and casting method, infiltration method, powder metallurgic method, spray-up method and Rapid Thermal platen press etc., but these methods all having that equipment cost is high in varying degrees, process time length, forming difficulty, technique is wayward and be difficult to the deficiencies such as suitability for industrialized production, and also has in some method that prefabricated component can not soak into completely, microstructure is uneven, chemical reaction occurs at interface and the defect such as obtained material structure is single.The method by quick hot pressing silumin electronic package materials is disclosed in patent CN102094142A, the method is under the condition of inert gas shielding, powder is loaded in mould, heating while pressurization, become goods through hot compression deformation, there is equipment requirement high, cost is high, and goods are the bulk that structure is single, bar-shaped or tabular, the method can not for the preparation of precise structure and complicated goods; Low-density low-expansion coefficient high heat conductance silico-aluminum encapsulating material and preparation method is reported in patent CN1531072A, it combines jet deposition densification technique and heat and other static pressuring processes or traditional heat pressing process, its technique exists that equipment cost is high, the process time is long, Composition Control is difficult and is difficult to suitability for industrialized production, and powder stock requires high deficiency; A kind of method of spraying and depositing high silicon aluminium alloy is disclosed in patent CN1345983A, it passes through spray deposition technique, and add Fe, Mn element and obtain metastable silumin, there is technological parameter complexity in the method, cost is higher, the semi-finished product porosity of preparation is comparatively large, needs to carry out the shortcomings such as secondary operations.So, seeking a kind of new technology and equipment requirement is simple, production efficiency is high, cost is low and resulting product has high fine and close, high-performance and be able to batch the preparation method of the advantages such as production, is extremely crucial to realize aluminium silicon electronic packing material commercial application.
Summary of the invention
In order to overcome above-mentioned the deficiencies in the prior art, object of the present invention is all providing a kind of fast injection the shaping method preparing aluminium silicon electronic packing material, by weight percentage, silico-aluminum composition Si is 10% ~ 60%, Al is surplus, prepare burden by alloying component, by the silicon aluminium alloy powder prepared and binding agent is mixing in banbury according to a certain ratio obtains uniform feeding, use fast injection forming technique, obtain alloying component even, the all even densification of microscopic structure, low thermal coefficient of expansion, high heat conductance, the aluminium silicon electronic packing material that complex structure is various, and thermal coefficient of expansion and thermal conductivity all adjustable within the specific limits, this can carry out the alloy formula needed for careful design according to the difference encapsulating matching materials, both thermal coefficient of expansions are mated completely, to reach the target of zero stress encapsulation and to regulate thermal conductivity to meet the needs of IC chip high strength heat radiation.Meanwhile, this preparation method's technique is simple, production efficiency is high, cost is low, controllability and reproducible, be able to batch loaded down with trivial details machining operation such as producing and avoid turnning and milling plane mill.
In order to solve above technical problem, the shaping method preparing aluminium silicon electronic packing material of a kind of fast injection of the present invention, described preparation method is for adopting the fast injection method of forming; Selection process is: be that the Si of 10% ~ 60% and the Al of 40% ~ 90% make silicon aluminium alloy powder by weight ratio; Silicon aluminium alloy powder and a certain amount of binding agent are obtained on banbury the feeding mixed at 100 ~ 230 DEG C of temperature after mixing 0.5 ~ 4h; Feeding through pulverizing after in injector in 90 ~ 220 DEG C of temperature, 60 ~ 110MPa pressure, shaping through 2 ~ 25s time fast injection, obtain the base substrate of corresponding construction; After base substrate is carried out removing binding agent, 500 ~ 650 DEG C of temperature, heating rate is 120 ~ 300 DEG C/h, sinters under vacuum condition, and temperature retention time is 1 ~ 5h, and obtaining relative density is 97% ~ 99%.
Present invention also offers the silico-aluminum electronic packaging composite material that a kind of said method prepares, described composite is by silica flour and aluminium powder and the obtained silico-aluminum composite feeding of appropriate binding agent Homogeneous phase mixing, form through fast injection moulding process and heat treatment sintering, its thermal coefficient of expansion is 6 ~ 12 × 10
-6/ K, thermal conductivity is 110 ~ 150W/mK, tensile strength is 120 ~ 165MPa, and elastic modelling quantity is 70 ~ 112GPa, and it can be used for the Electronic Packaging of the microelectronic circuits in field such as Aero-Space, electronics, computer, communication and the encapsulating material of microwave line and large scale integrated circuit.
Preferably, the particle diameter of described silicon aluminium alloy powder is 5 ~ 50 μm.The thermal coefficient of expansion of described aluminium silicon electronic packing material is 6 ~ 12 × 10-6/K, and pyroconductivity is 110 ~ 150W/mK, and tensile strength is 120 ~ 165MPa, and elastic modelling quantity is 70 ~ 112GPa; The thermal coefficient of expansion of described aluminium silicon electronic packing material is 8 × 10
-6/ K, pyroconductivity is 120W/mK, and tensile strength is 150MPa, and elastic modelling quantity is 80GPa; More preferably the thermal coefficient of expansion of described aluminium silicon electronic packing material is 10 × 10
-6/ K, pyroconductivity is 140W/mK, and tensile strength is 155MPa, and elastic modelling quantity is 100GPa.
The present invention also provides the embody rule of above-mentioned material, for Aero-Space, electronics, computer or the microelectronic circuits of the communications field and the encapsulation of microwave line.Also can be used for the Electronic Packaging of integrated circuit.
The present invention compared with prior art, has the following advantages or characteristic:
(1) material low thermal coefficient of expansion (6 ~ 12 × 10
-6/ K), high heat conductance (110 ~ 150W/mK) and be adjustable within the scope of this, this can carry out the alloy formula needed for careful design according to the difference encapsulating matching materials, both thermal coefficient of expansions are mated completely, to reach the target of zero stress encapsulation and to regulate thermal conductivity to meet the needs of IC chip high strength heat radiation.
(2) low (1.7 ~ 2.6g/cm of alloy proportion
3), intensity is high, specific stiffness is large, under the prerequisite meeting heat sinking function, little, the lightweight effect of volume can be reached, aerospace equipment and movement, the light-weighted requirement of calculating communication apparatus can be met and adapt to the developing direction of modern electronic product, and be applicable to the industry of the modern aerospace such as aviation electronics and spacecraft in the urgent need to.
(3) the inventive method can obtain the electronic packaging composite material of the various near-net-shape of complex structure and avoid the loaded down with trivial details machining operation such as turnning and milling plane mill, and material can be used for the Electronic Packaging of the microelectronic circuits in field such as Aero-Space, electronics, computer, communication and the encapsulating material of microwave line and large scale integrated circuit.
(4) the inventive method technique is simple, production efficiency is high, cost is low, process control and reproducible, be able to batch production.
(5) compared to prior art, such as CN1345983A, the performance of product is not only lost, and better, performance is more excellent, specifically can see tables of data 1.
Silicon aluminium alloy powder is used innovatively through inventor, by the silico-aluminum electronic packaging composite material that the fast injection method of forming is obtained, the method need not add any other the third powder, and the excellent product performance obtained, complex structure is various, avoid the machining process of postorder simultaneously and saved raw material, the composite through inventor's repetition test and gained has with the feature in following table 1 performance, has the unforeseeable technique effect of those skilled in the art.
Accompanying drawing explanation
Fig. 1 is the Electronic Speculum figure of gained silicon aluminium alloy powder in the embodiment of the present invention 1;
Fig. 2 is the Electronic Speculum figure of gained silicon aluminium alloy powder in the embodiment of the present invention 2;
Fig. 3 is the Electronic Speculum figure of the cross section of gained silico-aluminum electronic packaging composite material in the embodiment of the present invention 3.
Detailed description of the invention
Below in conjunction with accompanying drawing, the preferred embodiments of the present invention are described, but preferred enforcement described herein is only for instruction and explanation of the present invention, is not intended to limit the present invention.
Embodiment 1
The shaping method preparing aluminium silicon electronic packing material of fast injection, below step: be that the silica flour of 60% and the aluminium powder Homogeneous phase mixing of 40% make the silicon aluminium alloy powder that granularity is 50 μm, as Fig. 1 by weight ratio; Silicon aluminium alloy powder and a certain amount of binding agent are obtained on banbury the feeding mixed at 190 DEG C of temperature after mixing 2h; Feeding through pulverizing after in injector in 180 DEG C of temperature, 110MPa pressure, shaping through 25s time fast injection, obtain the base substrate of corresponding construction; Carried out by base substrate after heat removes binding agent, 650 DEG C of temperature, heating rate is 300 DEG C/h, sinters under vacuum condition, and temperature retention time is 5h, obtains the silico-aluminum electronic packaging composite material that relative density is 97%.
Embodiment 2
The shaping method preparing aluminium silicon electronic packing material of fast injection, below step: by weight ratio be 10% silica flour and 90% aluminium powder Homogeneous phase mixing after make the silicon aluminium alloy powder that granularity is 5 μm, as Fig. 2; Silicon aluminium alloy powder and a certain amount of binding agent are obtained on banbury the feeding mixed at 140 DEG C of temperature after mixing 0.5h; Feeding through pulverizing after in injector in 155 DEG C of temperature, 60MPa pressure, shaping through 2s time fast injection, obtain the base substrate of corresponding construction; Carried out by base substrate after heat removes binding agent, 550 DEG C of temperature, heating rate is 120 DEG C/h, sinters under vacuum condition, and temperature retention time is 1h, obtains the silico-aluminum electronic packaging composite material that relative density is 98%.
Embodiment 3
The shaping method preparing aluminium silicon electronic packing material of fast injection, below step: be that to make granularity be 25 μm of silicon aluminium alloy powders for the silica flour of 40% and the aluminium powder of 60% by weight ratio; Silicon aluminium alloy powder and a certain amount of binding agent are obtained on banbury the feeding mixed at 175 DEG C of temperature after mixing 1h; Feeding through pulverizing after in injector in 173 DEG C of temperature, 90MPa pressure, shaping through 5s time fast injection, obtain the base substrate of corresponding construction; Carried out by base substrate after heat removes binding agent, 580 DEG C of temperature, heating rate is 200 DEG C/h, sinters under vacuum condition, and temperature retention time is 3h, obtains the silico-aluminum electronic packaging composite material that relative density is 99%, as Fig. 3.
The structure of above-described embodiment 1-3 is shown in Fig. 1-3, and lists in table 1 for its product structure, raw material, processing method, relative density and tensile strength and elastic modelling quantity etc., and compared with prior art, the present invention achieves unforeseeable technique effect.
The performance of table 1 composite of the present invention
Above-described embodiment be only of the present invention preferably, not be used for limiting the present invention, above example is convenient to understand preparation method of the present invention with properties of product trend on technical arrangement plan, to make those skilled in the art can know the innovation essence grasping technical solution of the present invention, the embodiment limited not only is proposed in function or properties of product.So in addition to the implementation, the present invention can also have other embodiment.All employings are equal to replaces or the equivalent technical scheme exchanging formation, all drops on the protection domain of application claims.
Claims (8)
1. the shaping method preparing aluminium silicon electronic packing material of fast injection, it is characterized in that: aluminium silicon electronic packing material adopts the preparation of the fast injection method of forming, and concrete technology is: be that the silica flour of 10% ~ 60% and the aluminium powder of 40% ~ 90% make silicon aluminium alloy powder by weight ratio; Silicon aluminium alloy powder and a certain amount of binding agent are obtained on banbury the feeding mixed at 100 ~ 230 DEG C of temperature after mixing 0.5 ~ 4h; Described feeding through pulverizing after in injector in 90 ~ 220 DEG C of temperature, 40 ~ 120MPa pressure, shaping through 1 ~ 30s time fast injection, obtain the base substrate of corresponding construction; Carried out by described base substrate after heat removes binding agent, 500 ~ 650 DEG C of temperature, heating rate is 120 ~ 300 DEG C/h, sinters under vacuum condition, and temperature retention time is 1 ~ 5h, obtains the described aluminium silicon electronic packing material that relative density is 97% ~ 99%.
2. method according to claim 1, is characterized in that: the particle diameter of described silicon aluminium alloy powder is 5 ~ 50 μm.
3. the method according to any one of claim 1-2, is characterized in that: the thermal coefficient of expansion of described aluminium silicon electronic packing material is 6 ~ 12 × 10
-6/ K, pyroconductivity is 110 ~ 150W/mK, and tensile strength is 120 ~ 165MPa, and elastic modelling quantity is 70 ~ 112GPa.
4. method according to claim 3, is characterized in that: the thermal coefficient of expansion of described aluminium silicon electronic packing material is 8 × 10
-6/ K, pyroconductivity is 120W/mK, and tensile strength is 150MPa, and elastic modelling quantity is 80GPa.
5. method according to claim 3, is characterized in that: the thermal coefficient of expansion of described aluminium silicon electronic packing material is 10 × 10
-6/ K, pyroconductivity is 140W/mK, and tensile strength is 155MPa, and elastic modelling quantity is 100GPa.
6. aluminium silicon electronic packing material prepared by the method according to any one of claim 1-2, is characterized in that: the thermal coefficient of expansion of described aluminium silicon electronic packing material is 6 ~ 12 × 10
-6/ K, pyroconductivity is 110 ~ 150W/mK, and tensile strength is 120 ~ 165MPa, and elastic modelling quantity is 70 ~ 112GPa.
7. the application of aluminium silicon electronic packing material according to claim 6, is characterized in that: described material is used for Aero-Space, electronics, computer or the microelectronic circuits of the communications field and the encapsulation of microwave line.
8. the application of aluminium silicon electronic packing material according to claim 6, is characterized in that: described material is used for the Electronic Packaging of integrated circuit.
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