CN106676333A - High-thermal-conductivity electronic packaging material for radioresistance reinforcement - Google Patents
High-thermal-conductivity electronic packaging material for radioresistance reinforcement Download PDFInfo
- Publication number
- CN106676333A CN106676333A CN201611129388.0A CN201611129388A CN106676333A CN 106676333 A CN106676333 A CN 106676333A CN 201611129388 A CN201611129388 A CN 201611129388A CN 106676333 A CN106676333 A CN 106676333A
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- thermal
- packaging material
- thermal conductivity
- ray
- electronic packaging
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Classifications
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
- C22C21/02—Alloys based on aluminium with silicon as the next major constituent
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/04—Alloys based on tungsten or molybdenum
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C30/00—Alloys containing less than 50% by weight of each constituent
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Packages (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
The invention belongs to the field of packaging materials, and discloses a high-thermal-conductivity electronic packaging material with a radioresistance reinforcement function. The packaging material is a composite material with a Al-W-Si ternary system, wherein the composite material comprises, by mass, 20-40% of W, 10-60% of Si and the balance Al. The density of the material is 2.9-4.01 g/cm<3>, the thermal conductivity is 130-200 W/(m*K), the coefficient of thermal expansion is 8-19*10<-6>/K, the thickness is 2 mm, the shielding effectiveness of the material for X-ray with 40 KeV energy exceeds 75%, and the shielding effectiveness of the material for X-ray with 60 KeV energy exceeds 40%. The packaging material has the characteristics of being low in specific gravity, high in thermal conductivity and low in expansion coefficient, meanwhile has the radioresistance reinforcement performance and can meet the requirements for integration of the small size, low weight and multiple functions of devices in some special application environments.
Description
Technical field
The present invention relates to a kind of encapsulating material, more particularly to a kind of high heat conduction Electronic Packaging with radiation hardening function
Material.
Background technology
With developing rapidly for electronic technology, electronic devices and components are also improved therewith for the requirement of encapsulating material.At some
It is to ensure that electronic device being capable of normal work under particular surroundings (such as X-ray radiation environment), it is desirable to which encapsulating material is except with passing
Outside system encapsulating material high heat conduction, low-expansion characteristic, also need to have radiation hardening performance concurrently, protect internal electronic device not
By the radiation injury of hard X ray.Currently, main METAL-MATRIX MATERIAL FOR ELECTRONIC PACKAGING has Al-Si, Al-SiC, Cu- diamond, W-
The different materials system such as Cu, Mo-Cu, kovar alloy.In above-mentioned material system, Al-Si, Al-SiC system encapsulating material proportion
It is little, with good thermal conductivity and relatively low thermal coefficient of expansion, practical application, but the material are received significant attention and obtained to hard
The barrier propterty of X-ray is poor, it is impossible to meet requirement of the electronic device to radiation hardening performance.And the system such as W-Cu, Mo-Cu
Encapsulating material is in addition to the premium properties with conventional encapsulant, it may have certain hard X ray shielding properties, but due to proportion
Greatly, the factor such as high cost, processing difficulties limits its development and application.
Al-W-Si composites are a kind of composites of new ternary system, realize conventional encapsulant height and lead
The effective integration of heat, low-expansion coefficient and radiation hardening performance, makes material have low-density, high heat conductance, low-expansion coefficient concurrently
With hard X ray protection etc. performance, can meet under some application circumstances to device miniaturization, lightweight and multifunctional unit
Requirement.
The content of the invention
The present invention is for the existing encapsulating material problem poor to the barrier propterty of hard X ray, there is provided one kind has anti-
The high-thermal conductivity electronic packaging material of radiation hardened function, it is characterised in that：
The material is a kind of composite of Al-W-Si ternary systems, and wherein the mass fraction of W is 20~40%, Si's
Mass fraction is 10~60%, and remaining is Al, and the density of the composite is 2.9~4.01g/cm3, thermal conductivity be 130~
200W/ (m × K), thermal coefficient of expansion is 8~19 × 10-6/K。
The thickness for 2mm encapsulating material to the shield effectiveness of 40KeV Energy X-rays more than 75%, to 60KeV energy
The shield effectiveness of X-ray is respectively more than 40%.
It is an advantage of the current invention that：
The present invention can realize the effective integration of conventional encapsulant and radiation hardening material property, make the encapsulating material
With low-gravity, high heat conductance, low-expansion performance, while having radiation hardening performance concurrently, some can be met special
To the requirement of device miniaturization, lightweight and multifunctional unit under applied environment.
Specific embodiment
The invention provides a kind of radiation hardening high-thermal conductivity electronic packaging material, by the following examples to the present invention
It is described further.
Embodiment 1
Composition is the composite encapsulating material of 20W60SiAl, and its density is 2.9g/cm3；Thermal conductivity is 131W/ (m × K)；Heat
The coefficient of expansion is 8.16 × 10-6/K；2mm thickness materials are 78% to the shield effectiveness of 40KeV Energy X-rays, to 60KeV energy
The shield effectiveness of X-ray is 43%.
Embodiment 2
Composition is the composite encapsulating material of 40W40SiAl, and its density is 3.72g/cm3；Thermal conductivity is 142W/ (m × K)；
Thermal coefficient of expansion is 9.33 × 10-6/K；2mm thickness materials are 98% to the shield effectiveness of 40KeV Energy X-rays, to 60KeV energy
The shield effectiveness of amount X-ray is 71%.
Embodiment 3
Composition is the composite encapsulating material of 20W50SiAl, and its density is 2.95g/cm3；Thermal conductivity is 145W/ (m × K)；
Thermal coefficient of expansion is 10.31 × 10-6/K；2mm thickness materials are 91% to the shield effectiveness of 40KeV Energy X-rays, to 60KeV
The shield effectiveness of Energy X-ray is 44%.
Embodiment 4
Composition is the composite encapsulating material of 40W30SiAl, and its density is 3.81g/cm3；Thermal conductivity is 160W/ (m × K)；
Thermal coefficient of expansion is 12.13 × 10-6/K；2mm thickness materials are 98% to the shield effectiveness of 40KeV Energy X-rays, to 60KeV
The shield effectiveness of Energy X-ray is 72%.
Embodiment 5
Composition is the composite encapsulating material of 20W40SiAl, and its density is 3.01g/cm3；Thermal conductivity is 158W/ (m × K)；
Thermal coefficient of expansion is 12.53 × 10-6/K；2mm thickness materials are 91% to the shield effectiveness of 40KeV Energy X-rays, to 60KeV
The shield effectiveness of Energy X-ray is 45%.
Embodiment 6
Composition is the composite encapsulating material of 40W10SiAl, and its density is 4.01g/cm3；Thermal conductivity is 197W/ (m × K)；
Thermal coefficient of expansion is 18.16 × 10-6/K；2mm thickness materials are 99% to the shield effectiveness of 40KeV Energy X-rays, to 60KeV
The shield effectiveness of Energy X-ray is 74%.
The Al-W-Si composites being related in above-described embodiment, its composition is several in Al-W-Si composite systems
Kind, the composite material compositions being related in the present invention are not limited to the present invention, any those skilled in the art, foundation
Technical solution of the present invention essence, can realize the regulation and control to material property by adjusting material composition.All foundation the technology of the present invention
Scheme essence, simply modification, equivalent variations and modification are carried out to above-described embodiment, still fall within technical solution of the present invention scope
It is interior.
Claims (2)
1. a kind of high-thermal conductivity electronic packaging material with radiation hardening function, it is characterised in that the material is a kind of Al-W-
The mass fraction of the composite of Si ternary systems, wherein W is 10~60% for the mass fraction of 20~40%, Si, and remaining is
Al, the density of the composite is 2.9~4.01g/cm3, thermal conductivity is 130~200W/ (m × K), and thermal coefficient of expansion is 8
~19 × 10-6/K。
2. a kind of radiation hardening high-thermal conductivity electronic packaging material according to claim 1, it is characterised in that the thickness
For the shield effectiveness of the encapsulating material to the shield effectiveness of 40KeV Energy X-rays more than 75%, to 60KeV Energy X-rays of 2mm
More than 40%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611129388.0A CN106676333B (en) | 2016-12-09 | 2016-12-09 | A kind of radiation hardening high-thermal conductivity electronic packaging material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611129388.0A CN106676333B (en) | 2016-12-09 | 2016-12-09 | A kind of radiation hardening high-thermal conductivity electronic packaging material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106676333A true CN106676333A (en) | 2017-05-17 |
| CN106676333B CN106676333B (en) | 2018-07-17 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611129388.0A Active CN106676333B (en) | 2016-12-09 | 2016-12-09 | A kind of radiation hardening high-thermal conductivity electronic packaging material |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102134650A (en) * | 2010-12-22 | 2011-07-27 | 东南大学 | Preparation process of light electronic packaging material |
| CN102978485A (en) * | 2011-09-07 | 2013-03-20 | 长沙华希金属材料有限公司 | Novel high-silicon aluminum alloy electronic packaging material and preparation method thereof |
| CN104550975A (en) * | 2015-01-30 | 2015-04-29 | 苏州赛菲集团有限公司 | Method for preparing silicon-aluminum alloy electronic packaging material by virtue of rapid injection molding |
| CN105986132A (en) * | 2015-01-30 | 2016-10-05 | 中南大学 | Method for preparing high silicon-aluminum alloy electronic packaging material through spray deposition and near-melting point compacting densification |
| CN105986134A (en) * | 2015-01-30 | 2016-10-05 | 中南大学 | Method for preparing high silicon aluminum alloy electronic packaging material |
-
2016
- 2016-12-09 CN CN201611129388.0A patent/CN106676333B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102134650A (en) * | 2010-12-22 | 2011-07-27 | 东南大学 | Preparation process of light electronic packaging material |
| CN102978485A (en) * | 2011-09-07 | 2013-03-20 | 长沙华希金属材料有限公司 | Novel high-silicon aluminum alloy electronic packaging material and preparation method thereof |
| CN104550975A (en) * | 2015-01-30 | 2015-04-29 | 苏州赛菲集团有限公司 | Method for preparing silicon-aluminum alloy electronic packaging material by virtue of rapid injection molding |
| CN105986132A (en) * | 2015-01-30 | 2016-10-05 | 中南大学 | Method for preparing high silicon-aluminum alloy electronic packaging material through spray deposition and near-melting point compacting densification |
| CN105986134A (en) * | 2015-01-30 | 2016-10-05 | 中南大学 | Method for preparing high silicon aluminum alloy electronic packaging material |
Non-Patent Citations (1)
| Title |
|---|
| 曾婧等: "电子封装用金属基复合材料的研究进展", 《中国有色金属学报》 * |
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| Publication number | Publication date |
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| CN106676333B (en) | 2018-07-17 |
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Effective date of registration: 20190606 Address after: 101407 No. 11 Xingke East Street, Yanqi Economic Development Zone, Huairou District, Beijing Patentee after: Research Institute of engineering and Technology Co., Ltd. Address before: No. 2, Xinjie street, Xicheng District, Beijing, Beijing Patentee before: General Research Institute for Nonferrous Metals |