CN104538479A - 多通道砷化镓光电导开关 - Google Patents
多通道砷化镓光电导开关 Download PDFInfo
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- CN104538479A CN104538479A CN201510000901.5A CN201510000901A CN104538479A CN 104538479 A CN104538479 A CN 104538479A CN 201510000901 A CN201510000901 A CN 201510000901A CN 104538479 A CN104538479 A CN 104538479A
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- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 67
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims abstract 18
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 13
- 239000000956 alloy Substances 0.000 claims abstract description 13
- 238000010438 heat treatment Methods 0.000 abstract description 9
- 238000009413 insulation Methods 0.000 abstract 4
- 230000005684 electric field Effects 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Switches Operated By Changes In Physical Conditions (AREA)
Abstract
本发明提供了多通道砷化镓光电导开关。所述的光电导开关中的绝缘基座上设置有平行排列的N个长条形的砷化镓,砷化镓与绝缘基座固定连接,相邻的砷化镓之间的间距相等,并在绝缘基座上构成通道,砷化镓的两端齐平,绝缘介质设置在通道中。在砷化镓两端设置合金电极,砷化镓同一端的合金电极相互连接。本发明在合适的偏置电场和红外激光触发下,N个砷化镓中将产生M个导电通道(1<M≤N);本发明的导通内阻为单通道光电导开关的1/M,可以明显改善光电导开关的导通特性。本发明的总发热功率为单通道光电导开关的1/M,每个导电通道的发热功率为单通道光电导开关的1/M2,大幅减少光电导开关的发热和热损伤,提高光电导开关的使用寿命。
Description
技术领域
本发明属于高功率半导体器件领域,具体涉及一种多通道砷化镓光电导开关,可用作纳秒量级高功率脉冲系统的开关。
背景技术
目前,砷化镓光电导开关已广泛应用于光电探测设备、太赫兹发生和探测装置、紧凑型脉冲功率系统等领域。但是,在非线性导通模式下,高功率的实用砷化镓光电导开关存在热损伤严重、工作寿命短的缺点,研制低导通内阻、长寿命的高功率砷化镓光电导开关是该领域的必然趋势。
发明内容
为了克服现有技术中砷化镓光电导开关在非线性导通模式下高功率工作时存在严重热损伤的不足,本发明提供一种多通道砷化镓光电导开关。本发明在实现砷化镓光电导开关高电压、大电流导通的同时,确保砷化镓光电导开关具有更高的使用寿命。
本发明解决其技术问题所采用的技术方案是:
本发明的多通道砷化镓光电导开关,其特点是,所述的光电导开关包括绝缘基座、高迁移率的砷化镓、绝缘介质、欧姆接触的合金电极。其连接关系是,在所述绝缘基座上设置有平行排列的N个长条形的砷化镓,砷化镓与绝缘基座固定连接,相邻的砷化镓之间的间距相等,相邻的砷化镓之间在绝缘基座上构成通道,砷化镓的两端齐平,所述的绝缘介质设置在通道中。采用光刻掩模、电子束蒸发或磁控溅射、高温退火等工艺在每个长条形的砷化镓两端设置欧姆接触的合金电极,砷化镓同一端的合金电极相互连接。从而获得多通道砷化镓光电导开关。
所述的绝缘介质或用间隙替代。
所述的高迁移率的砷化镓的数量范围为二到五十个。
基于多个开关并联导通的思路,可以实现砷化镓光电导开关从单通道导通到多通道导通的技术跨越,大大降低开关导通内阻和热损伤,提高砷化镓光电导开关的使用寿命。本发明的多通道砷化镓光电导开关,是采用半导体工艺或机械工艺,制作并整齐摆放N个窄条形的、砷化镓材料互不相连的单通道光电导开关,但每个单通道光电导开关的阳极电极相互连接形成共有阳极,每个单通道光电导开关的阴极电极相互连接形成共有阴极,从而由N个单通道砷化镓光电导开关并联构成1个多通道砷化镓光电导开关。
本发明的有益效果是:本发明的多通道砷化镓光电导开关在合适的偏置电场和红外激光触发下,N个长条形高迁移率的砷化镓中将产生M个导电通道(1<M≤N);该多通道砷化镓光电导开关的导通内阻为单通道光电导开关的1/M,可以明显改善光电导开关的导通特性。该多通道砷化镓光电导开关的总发热功率为单通道光电导开关的1/M,每个导电通道的发热功率为单通道光电导开关的1/M2,大幅减少光电导开关的发热和热损伤,提高光电导开关的使用寿命。
附图说明
图1是本发明的结构示意图;
图2是本发明的侧视图;
图中,1. 绝缘基座 2.砷化镓 3.绝缘介质 4.合金电极。
具体实施方式
下面结合附图对本发明进行进一步说明。
实施例1
图1是本发明的结构示意图,图2是本发明的侧视图。在图1、图2中。
本发明的多通道砷化镓光电导开关,包括绝缘基座1、高迁移率的砷化镓2、绝缘介质3、欧姆接触的合金电极4。其连接关系是,在所述绝缘基座1上设置有平行排列的N个长条形的砷化镓2,砷化镓2与绝缘基座1固定连接,相邻的砷化镓2之间的间距相等,相邻的砷化镓2之间在绝缘基座1上构成通道,砷化镓2的两端齐平,所述的绝缘介质3设置在通道中。采用光刻掩模、电子束蒸发或磁控溅射、高温退火等工艺在每个长条形的砷化镓2两端设置欧姆接触的合金电极4,砷化镓2同一端的合金电极相互连接。从而获得多通道砷化镓光电导开关。本发明,在合适的偏置电场和红外激光触发下,N个长条形高迁移率的砷化镓中将产生M个导电通道(1<M≤N);本发明的导通内阻为单通道光电导开关的1/M,可以明显改善光电导开关的导通特性。本发明的总发热功率为单通道光电导开关的1/M,每个导电通道的发热功率为单通道光电导开关的1/M2,大幅减少光电导开关的发热和热损伤,提高光电导开关的使用寿命。
本实施例中,所述的高迁移率的砷化镓2的数量为五十个。
实施例2
本实施例与实施例1的结构相同,不同之处是,所述的高迁移率的砷化镓的数量为二个。
实施例3
本实施例与实施例1的结构相同,不同之处是,所述的绝缘介质用间隙替代。
实施例4
本实施例与实施例1的结构相同,不同之处是,在欧姆接触的合金电极4上,通过焊接工艺,焊接金属引线,构成带引线的多通道砷化镓光电导开关。
Claims (3)
1.一种多通道砷化镓光电导开关,其特征在于:所述的光电导开关包括绝缘基座(1)、高迁移率的砷化镓(2)、绝缘介质(3)、欧姆接触的合金电极(4);其连接关系是,在所述绝缘基座(1)上设置有平行排列的N个长条形的砷化镓(2),砷化镓(2)与绝缘基座(1)固定连接,相邻的砷化镓(2)之间的间距相等,相邻的砷化镓(2)之间在绝缘基座(1)上构成通道,砷化镓(2)的两端齐平,所述的绝缘介质(3)设置在通道中;在每个长条形的砷化镓(2)两端设置欧姆接触的合金电极(4),砷化镓(2)同一端的合金电极相互连接。
2.根据权利要求1所述的多通道砷化镓光电导开关,其特征在于:所述的绝缘介质(3)用间隙替代。
3.根据权利要求1所述的多通道砷化镓光电导开关,其特征在于:所述的高迁移率的砷化镓(2)的数量范围为二到五十个。
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105957903A (zh) * | 2016-06-14 | 2016-09-21 | 中国工程物理研究院流体物理研究所 | 砷化镓光导开关的引线连接结构以及引线焊接工艺 |
CN112614909A (zh) * | 2020-11-27 | 2021-04-06 | 中国电子科技集团公司第十三研究所 | 光导开关器件 |
JP2022525741A (ja) * | 2019-03-27 | 2022-05-19 | フラウンホッファー-ゲゼルシャフト ツァー フェーデルング デア アンゲバンテン フォルシュング エー ファー | マルチチャネル光導電性テラヘルツ受信アンテナ、受信機、テラヘルツシステムおよびテラヘルツ方法 |
CN115020515A (zh) * | 2022-06-08 | 2022-09-06 | 内江师范学院 | 基于位相光栅分光触发带侧墙的多通道砷化镓光电导开关 |
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CN103022220A (zh) * | 2011-09-21 | 2013-04-03 | 中国科学院上海硅酸盐研究所 | 高耐压、低导通电阻的光电导开关及其制造方法 |
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CN204332989U (zh) * | 2015-01-05 | 2015-05-13 | 中国工程物理研究院流体物理研究所 | 多通道砷化镓光电导开关 |
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US5804815A (en) * | 1996-07-05 | 1998-09-08 | Sandia Corporation | GaAs photoconductive semiconductor switch |
CN103022220A (zh) * | 2011-09-21 | 2013-04-03 | 中国科学院上海硅酸盐研究所 | 高耐压、低导通电阻的光电导开关及其制造方法 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105957903A (zh) * | 2016-06-14 | 2016-09-21 | 中国工程物理研究院流体物理研究所 | 砷化镓光导开关的引线连接结构以及引线焊接工艺 |
JP2022525741A (ja) * | 2019-03-27 | 2022-05-19 | フラウンホッファー-ゲゼルシャフト ツァー フェーデルング デア アンゲバンテン フォルシュング エー ファー | マルチチャネル光導電性テラヘルツ受信アンテナ、受信機、テラヘルツシステムおよびテラヘルツ方法 |
JP7315183B2 (ja) | 2019-03-27 | 2023-07-26 | フラウンホッファー-ゲゼルシャフト ツァー フェーデルング デア アンゲバンテン フォルシュング エー ファー | マルチチャネル光導電性テラヘルツ受信アンテナ、受信機、テラヘルツシステムおよびテラヘルツ方法 |
CN112614909A (zh) * | 2020-11-27 | 2021-04-06 | 中国电子科技集团公司第十三研究所 | 光导开关器件 |
CN115020515A (zh) * | 2022-06-08 | 2022-09-06 | 内江师范学院 | 基于位相光栅分光触发带侧墙的多通道砷化镓光电导开关 |
CN115020515B (zh) * | 2022-06-08 | 2023-04-25 | 内江师范学院 | 基于位相光栅分光触发带侧墙的多通道砷化镓光电导开关 |
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