CN104538325A - P-type silicon wafer Cu pollution detection method - Google Patents
P-type silicon wafer Cu pollution detection method Download PDFInfo
- Publication number
- CN104538325A CN104538325A CN201410748502.2A CN201410748502A CN104538325A CN 104538325 A CN104538325 A CN 104538325A CN 201410748502 A CN201410748502 A CN 201410748502A CN 104538325 A CN104538325 A CN 104538325A
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- CN
- China
- Prior art keywords
- silicon wafer
- type silicon
- detection method
- pollution detection
- silicon chip
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention relates to a P-type silicon wafer Cu pollution detection method. The P-type silicon wafer Cu pollution detection method includes the following steps: (1) the surface of a silicon wafer is wetted with deionized water for at least three minutes; (2) airing is carried out in a conventional environment for twelve hours or more; (3) ICP-MS measurement is carried out on the aired silicon wafer. In the step (1), wetting is characterized in that the silicon wafer is in contact with the deionized water with the specific resistance larger than 18 ohm, and contact is carried out in the flushing mode or the soaking mode. In the step (2), the conventional environment is a 100-stage or higher-than-100-stage dust-free environment, the temperature ranges from 21 DEG C to 25 DEG C, and the humidity ranges from 30% to 70%. The P-type silicon wafer is a silicon wafer with Boron as dopants. By means of the P-type silicon wafer Cu pollution detection method, Cu pollution to the P-type silicon wafer can be effectively measured; in addition, the time is greatly shortened, and the P-type silicon wafer Cu pollution detection method is of great significance in defective product outflow prevention and quality improving in the later period.
Description
Technical field
The invention belongs to field of semiconductor manufacture, the mensuration that the Cu relating to the detection method that a kind of polished silicon wafer Cu metallic pollution is new, particularly P-type silicon sheet pollutes.
Background technology
Silicon chip is to remove surface metal in the object of polished and cleaned, in order to characterize the effect of its cleaning, generally can carry out ICP-MS sampling to silicon chip after cleaning to measure, object is just to monitor surface metal levels by measuring, and its pollution of general silicon chip only can occur in surface, therefore can be removed by its surface metal of cleaning.
For P-type silicon sheet, due to its crystal structure and dopant impact, in the course of processing, be easy to be subject to Cu pollute, and the Cu polluted can diffuse in wafer bulk, affect by diffusion velocity and diffusion conditions, reversely can not be diffused into surface in this part Cu short time to be washed, but after the storage of a period of time (general needs more than 30 days), may due to some condition catalytic affect, surface can be precipitated again and cause surface contamination, at this moment because product goes out lotus, pollution can not be found.
Summary of the invention
The object of the present invention is to provide a kind of can after Wafer Cleaning in rapid evaluation wafer bulk or surface whether be subject to Cu pollute P-type silicon sheet Cu contamination detection method.
For solving the problems of the technologies described above, P-type silicon sheet Cu contamination detection method of the present invention, comprises the steps: the first step, utilizes deionized water to soak the surface at least 3 minutes of silicon chip; Second step, dries more than 12 hours and 12 hours under conventional environment; 3rd step, carries out ICP-MS mensuration by the silicon chip dried.
In the described first step, soak the deionized water being greater than 18 Ω for silicon chip and resistivity and contact.
Described contact is for rinsing or soaking.
In described second step, conventional environment is the clean room environment of more than 100 grades and 100 grades, and temperature 21 DEG C ~ 25 DEG C, humidity is 30% ~ 70%.
The silicon chip of described P-type silicon sheet to be dopant be Boron.
The Cu that P-type silicon sheet Cu contamination detection method of the present invention can effectively determine suffered by P-type silicon sheet pollutes, and substantially reduces the time, and the prevention defective products for the later stage flows out and quality improvement is significant.
Accompanying drawing explanation
Fig. 1 is P-type silicon sheet Cu contamination detection method flow chart of the present invention;
Fig. 2 is the detection comparison diagram one of prior art and P-type silicon sheet Cu contamination detection method of the present invention;
Fig. 3 is the detection comparison diagram two of prior art and P-type silicon sheet Cu contamination detection method of the present invention.
Embodiment
Below in conjunction with accompanying drawing, P-type silicon sheet Cu contamination detection method of the present invention is described in further detail.As shown in Figure 1, P-type silicon sheet Cu contamination detection method of the present invention, the first step, deionized water is utilized to soak the silicon chip surface more than at least 3 minutes that dopant is Boron, soak and refer to that silicon chip contacts with the deionized water that resistivity is greater than 18 Ω in the mode of rinsing or soak, make its surface easily redox electron exchange occur, the precipitation for Cu ion provides necessary valence electron, needs all to deal with the every part of silicon chip time wetting.Second step, dries more than 12 hours naturally, and the clean room environment more than 100 grades and 100 grades dries (indoor maintenance temperature 21 DEG C ~ 25 DEG C, humidity is 30% ~ 70%), enables the Cu ion of pollution fully be precipitated silicon chip surface; 3rd step, ICP-MS measures the Cu diffusing to silicon chip surface.
As shown in Figure 2 and Figure 3, visible, the silicon chip polluted equally, measure after cleaning respectively, store the surface C u measuring and adopt the inventive method afterwards and be measured to for 30 days, both measurement results are at the same order of magnitude afterwards; Same unpolluted silicon chip, measure after cleaning respectively, store 30 days and measure afterwards and adopt the surface C u that is measured to of the inventive method, three does not all have Cu, and the result drawn by repeated experiment is also consistent.
The Cu that P-type silicon sheet Cu contamination detection method of the present invention can effectively determine suffered by P-type silicon sheet pollutes, and substantially reduces the time, and the prevention defective products for the later stage flows out and quality improvement is significant.
Below the preferred embodiment of the invention is illustrated, but the invention is not limited to described embodiment, those of ordinary skill in the art also can make all equivalent modification or replacement under the prerequisite without prejudice to the invention spirit, and these equivalent modification or replacement are all included in the application's claim limited range.
Claims (5)
1.P type silicon chip Cu contamination detection method, is characterized in that, comprise the steps:
The first step, utilizes deionized water to soak the surface at least 3 minutes of silicon chip;
Second step, dries more than 12 hours and 12 hours under conventional environment;
3rd step, carries out ICP-MS mensuration by the silicon chip dried.
2. P-type silicon sheet Cu contamination detection method according to claim 1, is characterized in that, in the described first step, soaks the deionized water being greater than 18 Ω for silicon chip and resistivity and contacts.
3. P-type silicon sheet Cu contamination detection method according to claim 2, is characterized in that, described contact is for rinsing or soaking.
4. P-type silicon sheet Cu contamination detection method according to claim 1, is characterized in that, in described second step, conventional environment is the clean room environment of more than 100 grades and 100 grades, and temperature 21 DEG C ~ 25 DEG C, humidity is 30% ~ 70%.
5. P-type silicon sheet Cu contamination detection method according to claim 1, is characterized in that, the silicon chip of described P-type silicon sheet to be dopant be Boron.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410748502.2A CN104538325A (en) | 2014-12-09 | 2014-12-09 | P-type silicon wafer Cu pollution detection method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410748502.2A CN104538325A (en) | 2014-12-09 | 2014-12-09 | P-type silicon wafer Cu pollution detection method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104538325A true CN104538325A (en) | 2015-04-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410748502.2A Pending CN104538325A (en) | 2014-12-09 | 2014-12-09 | P-type silicon wafer Cu pollution detection method |
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| CN (1) | CN104538325A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002517753A (en) * | 1998-06-08 | 2002-06-18 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | Method for monitoring the concentration of metal impurities in a wafer cleaning solution |
| CN101767787A (en) * | 2010-01-19 | 2010-07-07 | 浙江大学 | Metallic silicon surface treatment purification method |
| CN102520054A (en) * | 2011-12-15 | 2012-06-27 | 天津中环领先材料技术有限公司 | Method for testing recovery rates of precious metal ions on surface of high silicon polished wafer |
| CN102980938A (en) * | 2012-12-03 | 2013-03-20 | 天津中环领先材料技术有限公司 | Method for testing metal ions on surface of wafer of solar battery |
-
2014
- 2014-12-09 CN CN201410748502.2A patent/CN104538325A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002517753A (en) * | 1998-06-08 | 2002-06-18 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | Method for monitoring the concentration of metal impurities in a wafer cleaning solution |
| CN101767787A (en) * | 2010-01-19 | 2010-07-07 | 浙江大学 | Metallic silicon surface treatment purification method |
| CN102520054A (en) * | 2011-12-15 | 2012-06-27 | 天津中环领先材料技术有限公司 | Method for testing recovery rates of precious metal ions on surface of high silicon polished wafer |
| CN102980938A (en) * | 2012-12-03 | 2013-03-20 | 天津中环领先材料技术有限公司 | Method for testing metal ions on surface of wafer of solar battery |
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Application publication date: 20150422 |
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| WD01 | Invention patent application deemed withdrawn after publication |