CN104518754A - Digital-controlled attenuator for first level of radio frequency chip - Google Patents

Digital-controlled attenuator for first level of radio frequency chip Download PDF

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Publication number
CN104518754A
CN104518754A CN201410777919.1A CN201410777919A CN104518754A CN 104518754 A CN104518754 A CN 104518754A CN 201410777919 A CN201410777919 A CN 201410777919A CN 104518754 A CN104518754 A CN 104518754A
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China
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resistance
pass transistor
nmos pass
attenuation module
attenuation
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CN201410777919.1A
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万佳
赵新强
李栋
谢李萍
韩文涛
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Chengdu Xingyuan spin polar Information Technology Co. Ltd.
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BEIJING AIJIELONG TECHNOLOGY Co Ltd
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Abstract

The invention discloses a digital-controlled attenuator for first level of a radio frequency chip. The attenuator comprises an input end, a resistor R2, a by-pass module, a 6dB attenuation module, a 1dB attenuation module, a 4dB attenuation module, an 8dB attenuation module, a 10dB attenuation module, a resistor R39 and an output end. The digital-controlled attenuator has the advantages of good compatibility, high integration, low cost and simple system design.

Description

For the numerical-control attenuator of the radio frequency chip first order
Technical field
The present invention relates to the numerical-control attenuator for the radio frequency chip first order, belong to technical field of electronic communication.
Background technology
At present, attenuator is a kind of circuit realizing gain control function, plays very important effect in electronic communication system, and the size being mainly used in conditioning signal processes to facilitate late-class circuit.The existence of attenuator makes communication system can keep constant or only change in more among a small circle and be unlikely to because input signal is too large and make receiver or transmitter that saturated or blocking occur by amplitude output signal when input signal amplitude alters a great deal.
In existing traditional communication system, the attenuator chip that especially attenuator of high-power signal system use is normally independent, it utilizes the High Electron Mobility Transistor of GaAs technology or realizes high-performance by PIN diode.But, CMOS, BiCOMS technique of GaAs technology and PIN diode technology and current extensively employing is difficult to compatibility, be difficult to be integrated into in a radio frequency chip, this makes existing traditional communication system there is the shortcomings such as poor compatibility, integrated level is low, cost is high, system is complicated.
Summary of the invention
The object of the present invention is to provide a kind of numerical-control attenuator for the radio frequency chip first order that can overcome above-mentioned technical problem, the present invention is realized by following technical scheme:
Numerical-control attenuator for the radio frequency chip first order of the present invention is made up of the input connected successively, resistance R2, bypass circuit module (Bypass), 6dB attenuation module, 1dB attenuation module, 2dB attenuation module, 4dB attenuation module, 8dB attenuation module, 10dB attenuation module, resistance R39 and output; Operating frequency is 30M ~ 400MHz, attenuation range 0 ~ 31dB, stepping 1dB.Described bypass circuit module is: the circuit providing signal path when attenuator breaks down or do not need attenuator to work.
Described resistance R2 and resistance R39 mainly provide input and output to the path on ground to ensure that the numerical-control attenuator for the radio frequency chip first order of the present invention does not work time circuit in there is no charge accumulated.
Control signal of the present invention has 6, one is special Bypass signal, all the other are respectively the control signal of 1dB, 2dB, 4dB, 8dB and 16dB decay, wherein the decay of 16dB has been worked by 6dB attenuation module and 10dB attenuation module simultaneously, what therefore forward control end 2 and forward control end 7 connect is same signal, and what Reverse Turning Control end 2 and Reverse Turning Control end 7 connect is same signal.16dB attenuation is divided into two-stage to do and can eliminate rear class LNA (Low Noise Amplifier, low noise amplifier) and other attenuation module to the impact of 16dB attenuation, ensures gain curve flatness during maximum attenuation.
Described 6dB attenuation module, 1dB attenuation module, 2dB attenuation module, 4dB attenuation module, 8dB attenuation module and 10dB attenuation module all adopt Π type resistance decrement network, control switch adopts the nmos pass transistor of substrate and source shorted, and each nmos pass transistor N-type deep trap (Deep NWell) is isolated on domain, lining source short circuit greatly can improve the linearity of attenuator, the impact of other domain parasitic antenna pair nmos transistors self when Deep NWell can reduce high frequency, opening or closing by nmos pass transistor, each attenuation module is in work or bypass condition, thus combined the attenuation of 0 ~ 31dB.
0dB attenuation is realized by bypass circuit module (Bypass), this is because due to attenuator series connection progression more, time unattenuated, Insertion Loss is larger, therefore the present invention is provided with bypass circuit module, only adopt a nmos pass transistor M1, insertion loss during in the hope of reducing unattenuated, reaches minimum amount of attenuation; R1 is the grid input resistance of nmos pass transistor M1, plays filtering and prevents from puncturing.Forward control end 1 is the drive singal of Bypass signal after two-stage inverter.
1dB attenuation module is by the resistance R9 connected successively, resistance R10, resistance R11, resistance R12, resistance R13, resistance R14, and nmos pass transistor M5, nmos pass transistor M6, nmos pass transistor M7, forward control end 3 and Reverse Turning Control end 3 are formed; The drive singal of the external 1dB attenuation control signal of forward control end 3 after two-stage inverter, the external Bypass signal of Reverse Turning Control end 3 and the drive singal of 1dB deamplification after NOR gate, when can ensure attenuator Bypass state like this, 1dB attenuation module absolutely not works.Resistance R10, resistance R13, resistance R14 form damping resistance network, nmos pass transistor M5 closes, when nmos pass transistor M6, nmos pass transistor M7 conducting, resistance decrement network works, complete the attenuation of 1dB, otherwise, when nmos pass transistor M5 opens, time nmos pass transistor M6 and nmos pass transistor M7 closes, 1dB attenuation module does not work; Resistance R15, resistance R17, resistance R18 are respectively the grid input resistance of nmos pass transistor M8, nmos pass transistor M9, nmos pass transistor M10, and resistance R15, resistance R17, resistance R18 mainly play filtering and prevent from puncturing.
Similar with 1dB attenuation module, 2dB attenuation module is made up of the resistance R15 connected successively, resistance R16, resistance R17, resistance R18, resistance R19, resistance R20, nmos pass transistor M8, nmos pass transistor M9, nmos pass transistor M10, forward control end 4 and Reverse Turning Control end 4; The drive singal of the external 2dB attenuation control signal of forward control end 4 after two-stage inverter, the external Bypass signal of Reverse Turning Control end 4 and the drive singal of 2dB deamplification after NOR gate, when can ensure attenuator Bypass state like this, 2dB attenuation module absolutely not works.Resistance R16, resistance R19, resistance R20 are damping resistance network, nmos pass transistor M8 closes, when nmos pass transistor M9, nmos pass transistor M10 conducting, resistance decrement network works, complete the attenuation of 2dB, otherwise, when nmos pass transistor M8 opens, time nmos pass transistor M9 and nmos pass transistor M10 closes, 2dB attenuation module does not work.Resistance R15, resistance R17, resistance R18 are respectively the grid input resistance of nmos pass transistor M8, nmos pass transistor M9, nmos pass transistor M10, mainly play filtering and prevent from puncturing.
Similar with 2dB attenuation module, 4dB attenuation module is made up of the resistance R21 connected successively, resistance R22, resistance R23, resistance R24, resistance R25, resistance R26, nmos pass transistor M11, nmos pass transistor M12, nmos pass transistor M13, forward control end 5 and Reverse Turning Control end 5; The drive singal of the external 4dB attenuation control signal of forward control end 5 after two-stage inverter, the external Bypass signal of Reverse Turning Control end 5 and the drive singal of 4dB deamplification after NOR gate, when can ensure attenuator Bypass state like this, 4dB attenuation module absolutely not works.Resistance R22, resistance R25, resistance R26 are damping resistance network, nmos pass transistor M11 closes, when nmos pass transistor M12, nmos pass transistor M13 conducting, resistance decrement network works, complete the attenuation of 4dB, otherwise, when nmos pass transistor M11 opens, time nmos pass transistor M12 and nmos pass transistor M13 closes, 4dB attenuation module does not work; Resistance R21, resistance R23, resistance R24 are respectively the grid input resistance of nmos pass transistor M11, nmos pass transistor M12, nmos pass transistor M13, mainly play filtering and prevent from puncturing.
Similar with 4dB attenuation module, 8dB attenuation module is made up of the resistance R27 connected successively, resistance R28, resistance R29, resistance R30, resistance R31, resistance R32, nmos pass transistor M14, nmos pass transistor M15, nmos pass transistor M16, forward control end 6 and Reverse Turning Control end 6; The drive singal of the external 8dB attenuation control signal of forward control end 6 after two-stage inverter, the external Bypass signal of Reverse Turning Control end 6 and the drive singal of 8dB deamplification after NOR gate, when can ensure attenuator Bypass state like this, 8dB attenuation module absolutely not works.Resistance R28, resistance R31, resistance R32 are damping resistance network, nmos pass transistor M14 closes, when nmos pass transistor M15, nmos pass transistor M16 conducting, resistance decrement network works, complete the attenuation of 8dB, otherwise, when nmos pass transistor M14 opens, time nmos pass transistor M15 and nmos pass transistor M16 closes, 8dB attenuation module does not work.Resistance R27, resistance R29, resistance R30 are respectively the grid input resistance of nmos pass transistor M14, nmos pass transistor M15, nmos pass transistor M16, mainly play filtering and prevent from puncturing.
The attenuation of 16dB will have been worked by 6dB attenuation module and 10dB attenuation module simultaneously.6dB attenuation module is made up of the resistance R3 connected successively, resistance R4, resistance R5, resistance R6, resistance R7, resistance R8, nmos pass transistor M2, nmos pass transistor M3, nmos pass transistor M4, forward control end 2 and Reverse Turning Control end 2; 10dB attenuation module is by the resistance R33 connected successively, resistance R34, resistance R35, resistance R36, resistance R37, resistance R38, and nmos pass transistor M17, nmos pass transistor M18, nmos pass transistor M19, forward control end 7 and Reverse Turning Control end 7 are formed.Forward control end 2 and the drive singal of the external 16dB attenuation control signal of forward control end 7 after two-stage inverter, Reverse Turning Control end 2 and the external Bypass signal of Reverse Turning Control end 7 and the drive singal of 16dB deamplification after NOR gate, when can ensure attenuator Bypass state like this, 16dB attenuation module absolutely not works.Resistance R4, resistance R7, resistance R8 and resistance R34, resistance R37, resistance R38 are damping resistance network, nmos pass transistor M2 and nmos pass transistor M17 closes, when nmos pass transistor M3, nmos pass transistor M4 and nmos pass transistor M18, nmos pass transistor M19 conducting, resistance decrement network works, complete the attenuation of 16dB, otherwise, when nmos pass transistor M2 and nmos pass transistor M17 opens, time nmos pass transistor M3, nmos pass transistor M4 and nmos pass transistor M18, nmos pass transistor M19 close, 16dB attenuation module does not work.Resistance R3, resistance R5, resistance R6, resistance R33, resistance R35, resistance R36 are respectively the grid input resistance of nmos pass transistor M2, nmos pass transistor M3, nmos pass transistor M4, nmos pass transistor M17, nmos pass transistor M18, nmos pass transistor M19, mainly play filtering and prevent from puncturing.
Advantage of the present invention is that compatibility is good, integrated level is high, cost is low, system is simple.
Accompanying drawing explanation
Fig. 1 is the structural representation of the numerical-control attenuator for the radio frequency chip first order of the present invention.
Embodiment
In order to make the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, the present invention is described in further detail, but protection scope of the present invention is not limited to following description.
As shown in Figure 1, the present invention is made up of input, resistance R2, Bypass module, 6dB attenuation module, 1dB attenuation module, 2dB attenuation module, 4dB attenuation module, 8dB attenuation module, 10dB attenuation module, resistance R39 and output; Operating frequency is 30M ~ 400MHz, attenuation range 0 ~ 31dB, stepping 1dB.
0dB attenuation is realized by Bypass module, this is because due to attenuator series connection progression more, time unattenuated, Insertion Loss is larger, therefore Bypass passage is specially devised, only have employed a nmos pass transistor M1, insertion loss during in the hope of reducing unattenuated, reaches minimum amount of attenuation.Resistance R1 is the grid input resistance of nmos pass transistor M1, plays filtering and prevents from puncturing.Forward control end 1 is the drive singal of Bypass signal after two-stage inverter.
1dB attenuation is completed by 1dB attenuation module; 1dB attenuation module is made up of the resistance R9 connected successively, resistance R10, resistance R11, resistance R12, resistance R13, resistance R14, nmos pass transistor M5, nmos pass transistor M6, nmos pass transistor M7, forward control end 3 and Reverse Turning Control end 3.The drive singal of the external 1dB attenuation control signal of forward control end 3 after two-stage inverter, the external Bypass signal of Reverse Turning Control end 3 and the drive singal of 1dB deamplification after NOR gate, when can ensure attenuator Bypass state like this, 1dB attenuation module absolutely not works.Resistance R10, resistance R13, resistance R14 are damping resistance network, nmos pass transistor M5 closes, when nmos pass transistor M6, nmos pass transistor M7 conducting, resistance decrement network works, complete the attenuation of 1dB, otherwise, when nmos pass transistor M5 opens, time nmos pass transistor M6NMOS transistor and M7 close, 1dB attenuation module does not work.Resistance R15, resistance R17, resistance R18 are respectively the grid input resistance of nmos pass transistor M8, nmos pass transistor M9, nmos pass transistor M10, mainly play filtering and prevent from puncturing.
2dB attenuation is completed by 2dB attenuation module.Similar with 1dB attenuation module, 2dB attenuation module is made up of the resistance R15 connected successively, resistance R16, resistance R17, resistance R18, resistance R19, resistance R20, nmos pass transistor M8, nmos pass transistor M9, nmos pass transistor M10, forward control end 4 and Reverse Turning Control end 4.The drive singal of the external 2dB attenuation control signal of forward control end 4 after two-stage inverter, the external Bypass signal of Reverse Turning Control end 4 and the drive singal of 2dB deamplification after NOR gate, when can ensure attenuator Bypass state like this, 2dB attenuation module absolutely not works.Resistance R16, resistance R19, resistance R20 are damping resistance network, nmos pass transistor M8 closes, when nmos pass transistor M9, nmos pass transistor M10 conducting, resistance decrement network works, complete the attenuation of 2dB, otherwise, when nmos pass transistor M8 opens, time nmos pass transistor M9 and nmos pass transistor M10 closes, 2dB attenuation module does not work.Resistance R15, resistance R17, resistance R18 are respectively the grid input resistance of nmos pass transistor M8, nmos pass transistor M9, nmos pass transistor M10, mainly play filtering and prevent from puncturing.
4dB attenuation is completed by 4dB attenuation module.Similar with 2dB attenuation module, 4dB attenuation module is made up of the resistance R21 connected successively, resistance R22, resistance R23, resistance R24, resistance R25, resistance R26, nmos pass transistor M11, nmos pass transistor M12, nmos pass transistor M13, forward control end 5 and Reverse Turning Control end 5.The drive singal of the external 4dB attenuation control signal of forward control end 5 after two-stage inverter, the external Bypass signal of Reverse Turning Control end 5 and the drive singal of 4dB deamplification after NOR gate, when can ensure attenuator Bypass state like this, 4dB attenuation module absolutely not works.Resistance R22, resistance R25, resistance R26 are damping resistance network, nmos pass transistor M11 closes, when nmos pass transistor M12, nmos pass transistor M13 conducting, resistance decrement network works, complete the attenuation of 4dB, otherwise, when nmos pass transistor M11 opens, time nmos pass transistor M12 and nmos pass transistor M13 closes, 4dB attenuation module does not work.Resistance R21, resistance R23, resistance R24 are respectively the grid input resistance of nmos pass transistor M11, nmos pass transistor M12, nmos pass transistor M13, mainly play filtering and prevent from puncturing.
8dB attenuation is completed by 8dB attenuation module.Similar with 4dB attenuation module, 8dB attenuation module is made up of the resistance R27 connected successively, resistance R28, resistance R29, resistance R30, resistance R31, resistance R32, nmos pass transistor M14, nmos pass transistor M15, nmos pass transistor M16, forward control end 6 and Reverse Turning Control end 6.The drive singal of the external 8dB attenuation control signal of forward control end 6 after two-stage inverter, the external Bypass signal of Reverse Turning Control end 6 and the drive singal of 8dB deamplification after NOR gate, when can ensure attenuator Bypass state like this, 8dB attenuation module absolutely not works.Resistance R28, resistance R31, resistance R32 are damping resistance network, nmos pass transistor M14 closes, when nmos pass transistor M15, nmos pass transistor M16 conducting, resistance decrement network works, complete the attenuation of 8dB, otherwise, when nmos pass transistor M14 opens, time nmos pass transistor M15 and nmos pass transistor M16 closes, 8dB attenuation module does not work.Resistance R27, resistance R29, resistance R30 are respectively the grid input resistance of nmos pass transistor M14, nmos pass transistor M15, nmos pass transistor M16, mainly play filtering and prevent from puncturing.
The attenuation of 16dB will have been worked by 6dB attenuation module and 10dB attenuation module simultaneously.6dB attenuation module is made up of the resistance R3 connected successively, resistance R4, resistance R5, resistance R6, resistance R7, resistance R8, nmos pass transistor M2, nmos pass transistor M3, nmos pass transistor M4, forward control end 2 and Reverse Turning Control end 2.10dB attenuation module is made up of the resistance R33 connected successively, resistance R34, resistance R35, resistance R36, resistance R37, resistance R38, nmos pass transistor M17, nmos pass transistor M18, nmos pass transistor M19, forward control end 7 and Reverse Turning Control end 7.The drive singal of the external 16dB attenuation control signal of forward control end 2 and 7 after two-stage inverter, the external Bypass signal of Reverse Turning Control end 2 and 7 and the drive singal of 16dB deamplification after NOR gate, when can ensure attenuator Bypass state like this, 16dB attenuation module absolutely not works.Resistance R4, resistance R7, resistance R8 and resistance R34, resistance R37, resistance R38 are damping resistance network, nmos pass transistor M2 and nmos pass transistor M17 closes, when nmos pass transistor M3, nmos pass transistor M4 and nmos pass transistor M18, nmos pass transistor M19 conducting, resistance decrement network works, complete the attenuation of 16dB, otherwise, when nmos pass transistor M2 and nmos pass transistor M17 opens, time nmos pass transistor M3, nmos pass transistor M4 and nmos pass transistor M18, nmos pass transistor M19 close, 16dB attenuation module does not work.Resistance R3, resistance R5, resistance R6, resistance R33, resistance R35, resistance R36 are respectively the grid input resistance of nmos pass transistor M2, nmos pass transistor M3, nmos pass transistor M4, nmos pass transistor M17, nmos pass transistor M18, nmos pass transistor M19, mainly play filtering and prevent from puncturing.
The attenuation of 3dB is completed jointly by 1dB attenuation module and 2dB attenuation module.By that analogy, maximum attenuation amount 31dB is completed by 1dB attenuation module, 2dB attenuation module, 4dB attenuation module, 8dB attenuation module and 6dB attenuation module and 10dB attenuation module all the other attenuations jointly.
The above; be only the specific embodiment of the present invention, but protection scope of the present invention is not limited thereto, is anyly familiar with those skilled in the art in scope disclosed by the invention; the change that can expect easily or replacement, all should be encompassed in the protection range of the claims in the present invention.

Claims (3)

1. for the numerical-control attenuator of the radio frequency chip first order, it is characterized in that, comprising: the input connected successively, resistance R2, bypass circuit module, 6dB attenuation module, 1dB attenuation module, 2dB attenuation module, 4dB attenuation module, 8dB attenuation module, 10dB attenuation module, resistance R39 and output.
2. the numerical-control attenuator for the radio frequency chip first order according to claim 1, it is characterized in that, described 6dB attenuation module, 1dB attenuation module, 2dB attenuation module, 4dB attenuation module, 8dB attenuation module and 10dB attenuation module all adopt Π type resistance decrement network, and control switch adopts the nmos pass transistor of substrate and source shorted.
3. the numerical-control attenuator for the radio frequency chip first order according to claim 1, is characterized in that, described nmos pass transistor N-type deep trap is isolated on domain.
CN201410777919.1A 2014-12-15 2014-12-15 Digital-controlled attenuator for first level of radio frequency chip Pending CN104518754A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108292911A (en) * 2015-12-03 2018-07-17 派瑞格恩半导体有限公司 Low phase shift high frequency attenuator
WO2020063566A1 (en) * 2018-09-28 2020-04-02 Huawei Technologies Co., Ltd. Composite right-hand left-hand distributed attenuator
CN111404511A (en) * 2020-05-19 2020-07-10 成都天锐星通科技有限公司 Ultra-wideband high-precision differential attenuator
CN117081523A (en) * 2023-10-18 2023-11-17 四川益丰电子科技有限公司 Broadband attenuation low-noise amplification multifunctional chip

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110148503A1 (en) * 2009-12-23 2011-06-23 Rf Micro Devices, Inc. Temperature controlled attenuator
CN103427781A (en) * 2013-08-31 2013-12-04 西安电子科技大学 Silicone substrate high-linearity low-phase-shift ultra-broad-band digital attenuator
WO2013178271A1 (en) * 2012-05-31 2013-12-05 Advantest (Singapore) Pte. Ltd. Variable attenuator
CN103441747A (en) * 2013-08-31 2013-12-11 西安电子科技大学 Low-differential-loss low-phase-shift high-integration-level five-level marching type ultra-wide-band numerical control attenuator
CN204362011U (en) * 2014-12-15 2015-05-27 北京爱洁隆技术有限公司 For the numerical-control attenuator of the radio frequency chip first order

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110148503A1 (en) * 2009-12-23 2011-06-23 Rf Micro Devices, Inc. Temperature controlled attenuator
WO2013178271A1 (en) * 2012-05-31 2013-12-05 Advantest (Singapore) Pte. Ltd. Variable attenuator
CN103427781A (en) * 2013-08-31 2013-12-04 西安电子科技大学 Silicone substrate high-linearity low-phase-shift ultra-broad-band digital attenuator
CN103441747A (en) * 2013-08-31 2013-12-11 西安电子科技大学 Low-differential-loss low-phase-shift high-integration-level five-level marching type ultra-wide-band numerical control attenuator
CN204362011U (en) * 2014-12-15 2015-05-27 北京爱洁隆技术有限公司 For the numerical-control attenuator of the radio frequency chip first order

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
陈星弼: "《功率MOSFET与高压集成电路》", 31 December 1990 *
黄智伟: "《无线发射与接收电路设计》", 31 December 2004 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108292911A (en) * 2015-12-03 2018-07-17 派瑞格恩半导体有限公司 Low phase shift high frequency attenuator
WO2020063566A1 (en) * 2018-09-28 2020-04-02 Huawei Technologies Co., Ltd. Composite right-hand left-hand distributed attenuator
US11012113B2 (en) 2018-09-28 2021-05-18 Huawei Technologies Co., Ltd. Composite right-hand left-hand distributed attenuator
CN111404511A (en) * 2020-05-19 2020-07-10 成都天锐星通科技有限公司 Ultra-wideband high-precision differential attenuator
CN117081523A (en) * 2023-10-18 2023-11-17 四川益丰电子科技有限公司 Broadband attenuation low-noise amplification multifunctional chip

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