CN104518418B - A kind of high-power 671nm laser acquisition methods - Google Patents
A kind of high-power 671nm laser acquisition methods Download PDFInfo
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- CN104518418B CN104518418B CN201410822249.0A CN201410822249A CN104518418B CN 104518418 B CN104518418 B CN 104518418B CN 201410822249 A CN201410822249 A CN 201410822249A CN 104518418 B CN104518418 B CN 104518418B
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Abstract
The present invention relates to a kind of high-power 671nm laser acquisition methods are proposed, belong to laser application technique field.The high-power laser diode that the inventive method is 658nm with the seed laser injection locking normal temperature wavelength of weak power, finds optimal decanting point, to reach the purpose for the 670.98nm single-mode lasers for obtaining 220mW with threshold value regulation method.The inventive method is workable, and the lithium atom cooling laser unimodality of acquisition is good, and power is big.
Description
Technical field
The present invention relates to a kind of high-power 671nm laser acquisition methods are proposed, belong to laser application technique field.
Background technology
High-power elemental lithium D lines resonance laser how is obtained in recent years in the cold atom experiment of lithium and quantum degeneracy gas
Received much attention in research.The aerial wavelength of the laser is 670.98nm, it is desirable to which unimodality is good, current acquisition scheme or
Person is of a high price, or power output is relatively low.
The influence of semiconductor doping material and technique is currently limited by, wavelength is the light work(of 671nm semiconductor laser
Rate is not high, only within 50mW, the exocoel frequency stabilized carbon dioxide laser made of such laser tube, often can only operate in below 10mW,
The required power of cold atom experiment is not reached much.
Since condensing upon Rice University's realization from the Bose Einstein of nineteen ninety-five lithium, elemental lithium turns into cold atom and led gradually
The new lover in domain.For atom cooling, elemental lithium has two big advantages, one is possessing very simple level structure, wherein wrapping
Energy level containing cyclical transition, the second is having very strong coupling with electromagnetic field.This two big advantage determines that lithium is well suited for using use
Laser-cooling technology.The natural abundance of lithium includes two isotopes 6Li and 7Li.6Li is fermion, and 7Li is boson, this
Sample can study the sub- Statistical Physics of two amounts from elemental lithium.For both isotopes, we can easily apply
Feshbach resonates to adjust their s scattering of wave length.The wider resonance point of elemental lithium and very light quality are cold atoms
The characteristic being delithted with experiment.
In order to obtain bigger cold atom sample, often atom is precooled with the technology of Magneto-Optical Trap.In order to optimize magnetic
Ligh trap, widespread practice is that the intensity of cooling laser is fixed near saturation intensity, and laser power is then improved as far as possible and is come
Increase the radius of laser.The radius increase of laser is cooled down, then charging ratio increases.Another key element is that laser spatial model requires single
Mould is good.The D lines resonance laser of elemental lithium is exactly the cooling laser used when cooling down lithium atom, and its acquisition is currently limited by
Two approach：Dye laser and exocoel frequency stabilized carbon dioxide laser.The advantage of dye laser is can to export the monochrome of watt magnitude
Light, its shortcoming is that maintenance work is very loaded down with trivial details, and intrinsic noise is larger, it is necessary to costly pumping laser.In order to got well
Spatial mode quality, the feature output power limit of exocoel frequency stabilized carbon dioxide laser is within 50mW.Thus follow-up laser is needed to put
Big measure increases laser power.The method for two amplifications used is tapered amplifier and laser injection locking.The former way
It is that the good seed laser of exocoel frequency stabilized carbon dioxide laser output mode is coupled in tapered amplifier, photon passes through in conical cavity
Avalanche type is amplified, and power output can reach 500mW, and its shortcoming is expensive, and if misoperation, easily by taper
Amplifier is burnt out.The way of the latter is similar, but current way is limited to the regulation from selection and the injection locking of laser tube
Technology, laser power is relatively low because obtained from, only 80mW or so, uses it as the cooling light of Magneto-Optical Trap, limits cold atom
The quality of sample.Occur another scheme recently, using the method in all-solid state laser source, by 1342nm laser freuqency doubling, from
And the laser of 671nm high-power outputs is obtained, but program technical difficulty is high, is unfavorable for promoting.
The content of the invention
The purpose of the present invention is to overcome the costliness and technical difficulty of 220mW lithium atoms cooling laser access approaches are high to lack
Point, proposes a kind of high-power 671nm laser acquisition methods.This method locks normal temperature wavelength with the seed laser injection of weak power
658nm high-power laser diode, to reach the purpose for the 670.98nm single-mode lasers for obtaining 220mW.
The present invention is achieved through technology：
Step one, using normal temperature (25 DEG C) wavelength in the range of 658nm ± 1nm, more than power 300mW laser tube is made
It is the second level from laser, the first order uses wavelength under normal temperature for 675nm laser from laser.
Step 2, the laser that selection 670nm outside cavity gas lasers are produced passes through electric current, temperature and exocoel as seed laser
Seed laser, is adjusted to single module 670.98nm outputs, power is 1.4mW by the regulation of chamber length.It will be planted using threshold values regulation method
Sub- laser injects the first order from laser with best decanting point.
The specific practice of threshold value regulation method is：
Step 2.1, the regulation first order is from laser temperature to 5 DEG C or so so that the first order is exported from laser in threshold value, uses
Light power meter monitors luminous power of the first order from laser；
Step 2.2, the first order from laser after isolation and coupling optical path, using two reflective mirrors by seed laser coupling
The injection first order is closed from laser；
Step 2.3, adjust repeatedly for seed laser to be coupled into first two reflective mirrors from laser, make light power meter
In reading reach maximum；
Step 2.4, then reduce operating current of the first order from laser, the operation of repeat step 2.2- steps 2.3, directly
3 times when reaching unimplanted seed laser to the full-scale reading of light power meter, injection lock-out state now is used as to optimal note
Enter keyed end.
The premise of the threshold method regulation is that wavelength of the first order from laser in threshold value is differed not with seed laser wavelength
More than about 4nm.
Step 3, the second level exports the second level from laser from laser in threshold values, with temperature controller the second level from laser
Temperature stabilization makes the second level increase 10nm from optical maser wavelength at 70 degree.
Step 4, the second level from laser after isolation and coupling optical path, the Injection seeded laser that step 2 is obtained
The first order afterwards injects the second level from laser from laser, is adjusted using threshold values regulation method, until finding optimal injection keyed end.
Step 4.1, the second level from laser after isolation and coupling optical path, using two reflective mirrors by first order laser
Coupling injects the second level from laser；Luminous power of the second level from laser is monitored with light power meter；
Step 4.2, the injection first order is passed through into Fabry-Perot-type cavity (FP chambers), sight from the second level after laser from laser
Examine spectral line of the second level from laser；
Step 4.3, adjust repeatedly for the first order to be injected into two reflective mirrors of the second level from laser from laser, make light work(
Reading in rate meter reaches maximum；
Step 4.4, the second level is then reduced to 40 degree, work electricity of the increase second level from laser from laser temperature
Stream, by observing the signal in FP chambers, makes the second level form smooth curve from laser line bottom, injection this moment is locked into shape
State is used as optimal injection keyed end.The second level now obtained is then 220mW 670.98nm single-mode lasers from laser.
Beneficial effect
The inventive method is workable, and the lithium atom cooling laser unimodality of acquisition is good, and power is big.
Brief description of the drawings
Fig. 1 is the flow chart of the inventive method；
Fig. 2 is the 671nm two-stages laser injection locking device index path in embodiment；
Label declaration：The photodiodes of 1a- first, the photodiodes of 1b- second, the photodiodes of 1c- the 3rd, 2-FP
Chamber, the optoisolators of 3a- first, the optoisolators of 3b- second, the optoisolators of 3c- the 3rd, the polarization beam apparatus of 4a- first, 4b- second
Polarization beam apparatus, the polarization beam apparatus of 4c- the 3rd, the polarization beam apparatus of 4d- the 4th, the reflective mirrors of 5a- first, the reflective mirrors of 5b- second,
The reflective mirrors of 5c- the 3rd, the reflective mirrors of 5d- the 4th, the reflective mirrors of 5e- the 5th, the reflective mirrors of 5f- the 6th, the reflective mirrors of 5g- the 7th, 5h- the 8th
Reflective mirror, the reflective mirrors of 5i- the 9th, the reflective mirrors of 5j- the tenth, the cylindrical mirrors of 6a- first, the cylindrical mirrors of 6b- second, the cylindrical mirrors of 6c- the 3rd,
The filter plate of the filter plate of the cylindrical mirrors of 6d- the 4th, the cylindrical mirrors of 6e- the 5th, the cylindrical mirrors of 6f- the 6th, the λ of 7a- the first/2, the λ of 7b- the 2nd/2,
The filter plate of the filter plate of the filter plate of the filter plate of λ of 7c- the 3rd/2, the λ of 7d- the 4th/2, the λ of 7e- the 5th/2, the λ of 7f- the 6th/2, the λ of 7g- the 7th/
2 filter plates,
Embodiment
The present invention proposes a kind of high power laser light two for being 658nm with the seed laser injection locking normal temperature wavelength of weak power
Pole pipe, obtains 220mW 670.98nm single-mode lasers.
Specific operation process is as follows：
Near 658nm, there is up to 300mW cheap laser tube.The present embodiment have selected Mitsubishi production
ML101F27 and LPC826, both prices are all at 45 yuans or so.
The optical maser wavelength for picking out outgoing at ML101F27 and the longer wavelengths of laser tube of LPC826 normal temperature, 22 DEG C is respectively
658.6nm and 657.6nm.Main laser uses the 670nm outside cavity gas lasers that TOPTICA companies produce, and peak power output is
2mW.By the regulation of electric current, temperature and outer cavity length, main laser is adjusted to single module 670.98nm outputs, power is
1.4mW.Because main laser power is only from the 1/200 of laser power, required far below injection locking, thus selection two-stage injection
Locking scheme:675nm that a peak power output is 15mW is first injected with main laser from laser, then with the first order from laser
Injection locks the second level from laser.
Two export up to 650mA from the current source current in the controller of laser, and precision is below 1 μ A, temperature control
The temperature-control range of device processed is 10 DEG C to 75 DEG C.The difficulty of this injection locking be how to adjust light path make seed light with from laser
Accomplish pattern match.Threshold value regulation is carried out, specific practice is：First is adjusted near threshold value output from laser, seed injection light,
After isolation and coupling optical path, monitored with power meter from the luminous power of laser, now adjust for by seed light be coupled into from
Two speculums of laser, repeatedly regulation makes the reading in light power meter maximum, then further reduces from laser work electricity
Stream, repeats operation above, 3 times or so when the full-scale reading of light power meter is to be not injected into seed light.Adjusted by threshold value
Section method, it is believed that seed light and pattern match from laser are good, then increase the electric current from laser, by observing in FP chambers
Signal, it is possible to easily find very much optimal injection keyed end.The premise of threshold method regulation is the wavelength from laser in threshold value
4nm is no more than about with seed light wavelength difference, otherwise the growth of power signal can not be also seen because wavelength exceedes injection scope, the
One-level is easy to realize by threshold method from laser injection locking.Because the second level is from optical maser wavelength and seed light wavelength difference
13nm, it is desirable to use threshold method, it is necessary to first increase from optical maser wavelength：It is with temperature controller that the second level is stable about 70 from laser tube temperature
Degree, 10nm is increased from optical maser wavelength, then the first order is matched and is overlapped good with from zlasing mode from laser with threshold value regulation method
It is good, the second level is then reduced to 40 degree from laser tube temperature, increases operating current, injection keyed end is found.If increase electricity
Stream can not find decanting point, then increase temperature by a small margin, the injection keyed end good until finding.
The present embodiment proposes a kind of 671nm two-stages laser injection locking device, including wavemeter a, oscillograph, first are from swashing
Light device, second are from laser, main laser, wavemeter b, the first photodiode, the second photodiode, the pole of the 3rd photoelectricity two
Pipe, FP chambers, the first optoisolator, the second optoisolator, the 3rd optoisolator, the first polarization beam apparatus, the second polarization beam apparatus,
3rd polarization beam apparatus, the 4th polarization beam apparatus, ten identical reflective mirrors, six identical cylindrical mirrors, eight identical λ/2
Filter plate.
Annexation is：Wavemeter a is connected with the first photodiode；Oscillograph is connected with the second photodiode
Connect, the light path of the second photodiode sequentially passes through the central shaft of FP chambers, the first polarization beam apparatus, reaches the second reflective mirror；The
The surface of one polarization beam apparatus is the first reflective mirror, and underface is the filter plate of the first λ/2；The center of first reflective mirror and wavelength
A, the first photodiode is counted to be located on straight line；The front-right of first polarization beam apparatus is the second reflective mirror, and second is reflective
The underface of mirror is the 3rd reflective mirror；The underface of the filter plate of first λ/2 is the second polarization beam apparatus, the second polarization beam apparatus
Front-left of the center in the 3rd reflective mirror；It is the filter plate of the 3rd λ/2 immediately below second polarization beam apparatus；A positive left side for polarization beam splitter
Side is followed successively by the filter plate of the 2nd λ/2, the first optoisolator, the second cylindrical lens, the first cylindrical lens, the second level from laser；
It is the 4th reflective mirror immediately below the filter plate of 3rd λ/2, the front-right of the 4th reflective mirror is the 5th reflective mirror, and the 5th reflective mirror is just
Lower section is the 6th reflective mirror, and the front-left of the 6th reflective mirror is the 3rd polarization beam apparatus；The front-left of 3rd polarization beam apparatus according to
Secondary is the filter plate of the 4th λ/2, the second optoisolator, the 4th cylindrical lens, the 3rd cylindrical lens, first from laser device；3rd
The underface of polarization beam apparatus is the filter plate of the 5th λ/2, is the 7th reflective mirror, the 7th reflective mirror immediately below the filter plate of the 5th λ/2
Front-right is the 8th reflective mirror, and the underface of the 8th reflective mirror is the 9th reflective mirror, and the front-left of the 9th reflective mirror is inclined for the 4th
Shake beam splitter；The front-left of 4th polarization beam apparatus is as the filter plate of the 6th λ/2, the 3rd optoisolator, the 6th cylindrical mirror,
Five cylindrical mirrors, seed laser；The underface of 4th polarization beam apparatus is the filter plate of the 7th λ/2, immediately below the filter plate of the 7th λ/2
For the tenth reflective mirror, the front-left of the tenth reflective mirror is the 3rd photodiode, and the 3rd photodiode is connected to wavemeter b.
671nm two-stages laser injection locking device light path and the course of work be：Seed laser is given birth to using TOPTICA companies
Seed laser, is adjusted to single module 670.98nm outputs, power is 1.4mW by the laser that the 670nm outside cavity gas lasers of production are produced,
Seed laser is respectively 150mm and 50mm the 5th cylindrical mirror and the 6th cylindrical mirror by focal length, then pass sequentially through the 3rd light every
From device, the filter plate of the 7th λ/2, the 4th polarization beam apparatus, the 9th reflective mirror, the 8th reflective mirror, the 7th reflective mirror and the first order from
Laser carries out injection locking；The first order reaches the 3rd by cylindrical mirror, optoisolator and filter plate in an identical manner from laser
Polarization beam apparatus；The first order reaches the second polarizing beam splitter mirror from laser by speculum, then by optoisolator, injection locking
The second level makes the light of generation by FP chambers and wavemeter a, observed from laser, when discovery spectral line quilt of the second level from laser
Adhesive is on seed laser spectral line, and bottom is smooth, then completes the second level and locked from the injection of laser, now shown in wavemeter
Be seed laser wavelength, be finally obtained obtain 220mW 670.98nm single-mode lasers.
Claims (2)
1. a kind of high-power 671nm laser acquisition methods, it is characterised in that：Specifically include following steps：
Step one, using normal temperature wavelength in the range of 658nm ± 1nm, more than power 300mW laser tube, as the second level from
Laser, the first order uses wavelength under normal temperature for 675nm laser from laser；
Step 2, the laser that selection 670nm outside cavity gas lasers are produced is long by electric current, temperature and outer cavity as seed laser
Regulation, seed laser be adjusted to single module 670.98nm output, power is 1.4mW；Seed is swashed using threshold value regulation method
Light injects the first order from laser with best decanting point；
The specific practice of threshold value regulation method is：
Step 2.1, the regulation first order is from laser temperature to 5 DEG C so that the first order is exported from laser in threshold value, uses light power meter
Monitor luminous power of the first order from laser；
Step 2.2, seed laser is coupled and noted from laser after isolation and coupling optical path by the first order using two reflective mirrors
Enter the first order from laser；
Step 2.3, adjust for seed laser to be coupled into first two reflective mirrors from laser, make in light power meter repeatedly
Reading reaches maximum；
Step 2.4, operating current of the first order from laser, the operation of repeat step 2.2- steps 2.3, Zhi Daoguang are then reduced
The full-scale reading of power meter reaches 3 times during unimplanted seed laser, is locked injection lock-out state now as optimal injection
Fixed point；
Step 3, the second level exports the second level from laser from laser in threshold values, with temperature controller the second level from laser temperature
Stabilization makes the second level increase 10nm from optical maser wavelength at 70 degree；
Step 4, the second level from laser after isolation and coupling optical path, after the Injection seeded laser that step 2 is obtained
The first order injects the second level from laser from laser, is adjusted using threshold value regulation method, until finding optimal injection keyed end；
Step 4.1, the second level from laser after isolation and coupling optical path, using two reflective mirrors by first order laser coupled
The second level is injected from laser；Luminous power of the second level from laser is monitored with light power meter；
Step 4.2, will the injection first order from the second level after laser from laser by Fabry-Perot-type cavity, the observation second level from
The spectral line of laser；
Step 4.3, adjust repeatedly for the first order to be injected into two reflective mirrors of the second level from laser from laser, make light power meter
In reading reach maximum；
Step 4.4, the second level is then reduced to 40 degree from laser temperature, increases operating current of the second level from laser,
By observing the signal in Fabry-Perot-type cavity, the second level is set to form smooth curve from laser line bottom, by note this moment
Enter lock-out state as optimal injection keyed end；Then swash from laser for 220mW 670.98nm single modes the second level now obtained
Light.
2. a kind of high-power 671nm laser acquisition methods according to claim 1, it is characterised in that：The threshold method is adjusted
The premise of section is the first order is less than or equal to 4nm from wavelength of the laser in threshold value with seed laser wavelength difference.
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| CN102163791A (en) * | 2011-03-22 | 2011-08-24 | 中国科学院物理研究所 | Re-pumped laser equipment and method for acquiring re-pumped lasers |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100841052B1 (en) * | 2006-10-11 | 2008-06-24 | 한국표준과학연구원 | Sweep optical frequency synthesizer using femtosecond laser optical injection locking and optical frequency synthesizing method using the synthesizer |
| US7633979B2 (en) * | 2008-02-12 | 2009-12-15 | Pavilion Integration Corporation | Method and apparatus for producing UV laser from all-solid-state system |
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- 2014-12-25 CN CN201410822249.0A patent/CN104518418B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7035297B1 (en) * | 2004-01-30 | 2006-04-25 | The United States Of America As Represented By The Secretary Of The Air Force | Continuous wave sodium beacon excitation source |
| CN102013625A (en) * | 2010-10-09 | 2011-04-13 | 维林光电(苏州)有限公司 | Seed light injecting master-slave matching method and seed light injecting system using same |
| CN102163791A (en) * | 2011-03-22 | 2011-08-24 | 中国科学院物理研究所 | Re-pumped laser equipment and method for acquiring re-pumped lasers |
Non-Patent Citations (1)
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| 用于冷原子干涉仪的拉曼激光的注入锁定;王玲等;《量子电子学报》;20120131;第29卷(第1期);第27-31页 * |
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