CN104506783A - Multi-mode super CCD (Charge Coupled Device) sensor - Google Patents
Multi-mode super CCD (Charge Coupled Device) sensor Download PDFInfo
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- CN104506783A CN104506783A CN201410659644.1A CN201410659644A CN104506783A CN 104506783 A CN104506783 A CN 104506783A CN 201410659644 A CN201410659644 A CN 201410659644A CN 104506783 A CN104506783 A CN 104506783A
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Abstract
The invention belongs to a photosensitive sensor, and particularly relates to a CCD (Charge Coupled Device) sensor. A multi-mode super CCD (Charge Coupled Device) sensor is characterized by comprising multiple lines of single-linear-array CCDs and an addressing circuit, wherein lines of the multiple lines of single-linear-array CCD are arranged closely; the addressing circuit is connected with the driving pulse signal of each line of single-linear-array CCDs; and each line of single-linear-array CCDs is provided with an independently determined address which is selected through a driving address gating signal. The multi-mode super CCD sensor has the function of an area array CCD for acquiring two-dimensional images signals. Moreover, the imaging time and charge transfer time of each line of imaging units can be controlled and output separately, and single-linear-array scanned image sequences are generated respectively.
Description
Technical field
The invention belongs to a kind of light sensor, particularly a kind of ccd sensor.
Background technology
Ccd sensor (Charge Coupled Device) is a kind of charge coupled device, use a kind of semi-conducting material of ISO to make, the signal charge produced by light can be stored, by applying the pulse of specific time sequence to it, the signal charge of storage is made in CCD, to make directional transmissions and realize self-scanning.Traditional C CD transducer comprises single linear CCD and area array CCD and TDI-CCD tri-kinds, and they, many tiny semiconductor silicon photosensitive solid elements, are that wire or planar are arranged together with very high-density.The optical imagery that it is formed by line array CCD is above converted into the sequential signal of telecommunication and exports, and when obtaining two dimensional image signal, must do relative pushing away sweep motion with imaging region; Area array CCD is two-dimensional image sensor, and two dimensional image directly can be changed into vision signal and export by it, is applicable to imaging region staring imaging; TDI-CCD similar is in area array CCD, and adopt push-scan imaging, it carries out electric charge to the same target light exposure in ground successively step by step and adds up, and is solved the problem of image energy deficiency by time delay integration.
But, to reach, both there is the function that area array CCD obtains two dimensional image signal, can control separately transfer time the imaging time of every row image-generating unit, picture signal again, export separately every row device imaging signal, traditional line array CCD, area array CCD and TDI-CCD do not accomplish.For this reason, the present invention is proposed.
Summary of the invention
The object of the invention is: a kind of multi-modal super CCD transducer (MS-CCD, i.e. Multi-modality SuperCCD) is provided, both there is the function of area array CCD, obtain two dimensional image signal; Again can to often row image-generating unit imaging time and charge transfer time control separately, export separately, each self-generating single line battle array scanned image sequence.
Technical scheme of the present invention is:
A kind of multi-modal super CCD transducer, is characterized in that comprising: multirow single linear CCD, addressing circuit, wherein:
Every provisional capital of described multirow single linear CCD comprises photosensitive unit, TG transfer gate, shift register, output amplifier; Described photosensitive unit and described shift register are arranged closely in described TG transfer gate both sides, line up list structure side by side; Every row single linear CCD be provided with independently drive pulse signal and voltage input for the shift direction that controls electric charge and speed, be provided with independently analog output signal end and be connected with output amplifier, for signal amplification output.
Close-packed arrays between each row of described multirow single linear CCD;
Described addressing circuit is connected with the drive pulse signal of described each row single linear CCD, and the often row of described single linear CCD has the address independently determined, the selection of this address is selected by driving address gating signal.
Often the row single linear CCD course of work is: when described TG transfer gate adds low level, and described photosensitive unit and described shift register are isolated, and at this moment photosensitive unit carries out light integration, continuous stored charge; When described TG transfer gate adds high level, photosensitive unit and shift register are linked up, and the electric charge accumulated during light integration is transferred in described shift register by described TG transfer gate.Time due to light integration will be far longer than the transfer time that described TG transfer gate adds high level, therefore in optical-integral-time, described shift register adds driving pulse and the electric charge more than in described shift register can be migrated out device, through described output amplifier, form clock signal.
The present invention's application addressing circuit controls separately each row single linear CCD, exports separately.When addressing circuit only chooses certain a line, selected row presses the work of the single linear CCD course of work, generates single line battle array scanned image sequence, achieves the function of single linear CCD; If addressing circuit chooses wherein number row simultaneously or sequentially, can realize simultaneously or sequentially to scan; If addressing circuit chooses each row simultaneously, when each row's line array CCD sampling time is identical, the sequential chart image signal of output generates two dimensional image, realizes the function of area array CCD.
The design of addressing circuit of the present invention, makes a kind of multi-modal super CCD of the present invention both have the function of area array CCD, obtains two dimensional image signal; Again can to often row image-generating unit imaging time and charge transfer time control separately, export separately, each self-generating single line battle array scanned image sequence.
Accompanying drawing explanation
Fig. 1 structural representation of the present invention
Fig. 2 square pixel MS-CCD structural representation;
Fig. 3 triangle pixel square formation arrangement architecture schematic diagram;
The another kind of arrangement architecture schematic diagram of Fig. 4 triangle pixel;
Fig. 5 hexagon pixel square formation arrangement architecture schematic diagram;
The another kind of arrangement architecture schematic diagram of Fig. 6 hexagon pixel;
Fig. 7 octagon pixel square formation arrangement architecture schematic diagram;
The another kind of arrangement architecture schematic diagram of Fig. 8 octagon pixel;
Embodiment
Embodiment 1: as shown in Figure 1, a kind of multi-modal super CCD transducer, is characterized in that comprising: multirow single linear CCD, addressing circuit, wherein:
Every provisional capital of described multirow single linear CCD comprises photosensitive unit, TG transfer gate, shift register, output amplifier; Described photosensitive unit and described shift register are arranged closely in described TG transfer gate both sides, line up list structure side by side; Every row single linear CCD be provided with independently drive pulse signal and voltage input for the shift direction that controls electric charge and speed, be provided with independently analog output signal end and be connected with output amplifier, for signal amplification output.
Close-packed arrays between each row of described multirow single linear CCD;
Described addressing circuit is connected with the drive pulse signal of described each row single linear CCD, and the often row of described single linear CCD has the address independently determined, the selection of this address is selected by driving address gating signal.
Embodiment 2: the multi-modal super CCD of the one according to embodiment 1, its feature multirow single linear CCD layout is triangle pixel square formation arrangement as indicated at 3, or for the square pixel square formation arrangement shown in Fig. 2 or for the hexagon pixel square formation shown in Fig. 5 arrange, octagon pixel square formation arranges.
Embodiment 3; The multi-modal super CCD of one according to embodiment 1, its feature multirow single linear CCD layout is the arrangement of triangle pixel, the arrangement of triangle pixel as shown in Figure 4, triangle pixel is placed upside down arrangement, equilateral adjacent, base is relative, forms parallel stripes, tightr compared with the triangle pixel square formation arrangement shown in Fig. 3.
Embodiment 4: the multi-modal super CCD of the one according to embodiment 1, its feature multirow single linear CCD layout is the arrangement of hexagon pixel, the arrangement of hexagon pixel as shown in Figure 6, N row arranges with N+2 and longitudinally aligns, N+1 row pixel is positioned at N and arranges the geometric center of arranging adjacent four pixels with N+2, tightr compared with the hexagon pixel square formation arrangement shown in Fig. 5.
Embodiment 5: as shown in Figure 5, the multi-modal super CCD of one according to embodiment 1, its feature multirow single linear CCD layout is the arrangement of octagon pixel, the arrangement of octagon pixel as shown in Figure 8, N row arranges with N+2 and longitudinally aligns, N+1 row pixel is positioned at N and arranges the geometric center of arranging adjacent four pixels with N+2, tightr compared with the octangle pixel square formation arrangement shown in Fig. 7.
The square formation arrangement that the pixel arrangement mode of embodiment 3 ~ embodiment 5 is more traditional is tightr, sampling density can be improved, reduce the redundant space useless to image taking, improve light concentration efficiency, thus hardware photonasty, signal to noise ratio and dynamic range are all increased.
Claims (9)
1. a multi-modal super CCD transducer, is characterized in that comprising: multirow single linear CCD, addressing circuit, wherein:
Every provisional capital of described multirow single linear CCD comprises photosensitive unit, TG transfer gate, shift register, output amplifier; Described photosensitive unit and described shift register are arranged closely in described TG transfer gate both sides, line up list structure side by side; Every row single linear CCD be provided with independently drive pulse signal and voltage input for the shift direction that controls electric charge and speed, be provided with independently analog output signal end and be connected with output amplifier, for signal amplification output;
Close-packed arrays between each row of described multirow single linear CCD;
Described addressing circuit is connected with the drive pulse signal of described each row single linear CCD, and the often row of described single linear CCD has the address independently determined, the selection of this address is selected by driving address gating signal.
2. the multi-modal super CCD transducer of one according to claim 1, is characterized in that: described multirow single linear CCD layout is the arrangement of triangle pixel.
3. the multi-modal super CCD transducer of one according to claim 2, is characterized in that: described triangle pixel is placed upside down arrangement, equilateral adjacent, and base is relative, forms parallel stripes.
4. the multi-modal super CCD transducer of one according to claim 1, is characterized in that: described multirow single linear CCD layout is the arrangement of square pixel.
5. the multi-modal super CCD transducer of one according to claim 4, is characterized in that: described square pixel becomes square formation to arrange.
6. the multi-modal super CCD transducer of one according to claim 1, is characterized in that: described multirow single linear CCD layout is the arrangement of hexagon pixel.
7. the multi-modal super CCD transducer of one according to claim 6, is characterized in that: described hexagon pixel arranges longitudinal alignment by N row and N+2, and N+1 row pixel is positioned at N and arranges the Structural assignments arranging the geometric center of adjacent four pixels with N+2.
8. the multi-modal super CCD transducer of one according to claim 1, is characterized in that: described multirow single linear CCD layout is the arrangement of octagon pixel.
9. the multi-modal super CCD transducer of one according to claim 8, is characterized in that: described octagon pixel arranges longitudinal alignment by N row and N+2, and N+1 row pixel is positioned at N and arranges the Structural assignments arranging the geometric center of adjacent four pixels with N+2.
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN106534726A (en) * | 2016-12-02 | 2017-03-22 | 中国电子科技集团公司第四十四研究所 | Multi-linear-array CCD structure |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1604335A (en) * | 2004-11-15 | 2005-04-06 | 西华大学 | CCD image sensor and high accuracy linear dimension measuring device and measuring method thereof |
CN1901216A (en) * | 2005-07-19 | 2007-01-24 | 恩益禧电子股份有限公司 | Image sensor |
CN101159822A (en) * | 2007-07-11 | 2008-04-09 | 西安工业大学 | Anti-flare light area array CCD image sensor |
US20130258153A1 (en) * | 2012-03-30 | 2013-10-03 | Boyd Fowler | Hybrid CCD-CMOS Camera Adapted for Forming Images of Moving Scenes |
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- 2014-11-18 CN CN201410659644.1A patent/CN104506783A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1604335A (en) * | 2004-11-15 | 2005-04-06 | 西华大学 | CCD image sensor and high accuracy linear dimension measuring device and measuring method thereof |
CN1901216A (en) * | 2005-07-19 | 2007-01-24 | 恩益禧电子股份有限公司 | Image sensor |
CN101159822A (en) * | 2007-07-11 | 2008-04-09 | 西安工业大学 | Anti-flare light area array CCD image sensor |
US20130258153A1 (en) * | 2012-03-30 | 2013-10-03 | Boyd Fowler | Hybrid CCD-CMOS Camera Adapted for Forming Images of Moving Scenes |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106534726A (en) * | 2016-12-02 | 2017-03-22 | 中国电子科技集团公司第四十四研究所 | Multi-linear-array CCD structure |
CN106534726B (en) * | 2016-12-02 | 2019-08-16 | 中国电子科技集团公司第四十四研究所 | More line array CCD structures |
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