CN104503646A - Touch panel and manufacturing method thereof - Google Patents
Touch panel and manufacturing method thereof Download PDFInfo
- Publication number
- CN104503646A CN104503646A CN201410849559.1A CN201410849559A CN104503646A CN 104503646 A CN104503646 A CN 104503646A CN 201410849559 A CN201410849559 A CN 201410849559A CN 104503646 A CN104503646 A CN 104503646A
- Authority
- CN
- China
- Prior art keywords
- niobium pentaoxide
- silica coating
- glass substrate
- rete
- visible ray
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 111
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims abstract description 60
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 56
- 239000011521 glass Substances 0.000 claims abstract description 42
- 230000005540 biological transmission Effects 0.000 claims abstract description 11
- 238000000576 coating method Methods 0.000 claims description 59
- 239000011248 coating agent Substances 0.000 claims description 58
- 239000000758 substrate Substances 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 239000010955 niobium Substances 0.000 claims description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000003475 lamination Methods 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 230000000007 visual effect Effects 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 5
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 abstract 4
- 239000010408 film Substances 0.000 description 20
- 230000003667 anti-reflective effect Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 239000006059 cover glass Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
The invention applies to the technical field of touch, and provides a touch panel. The touch panel comprises a glass base plate, a niobium pentoxide film layer and a silicon dioxide film layer; a transparent electrode graph is formed on the surface of the silicon dioxide film layer; the niobium pentoxide film layer is 80 to 160 angstroms in thickness, and the silicon dioxide film layer is 300 to 400 angstroms in thickness; the total light transmission rate of the glass base plate, the niobium pentoxide film layer and the silicon dioxide film layer to visual light is more than 93%; the difference between the light transmission rate of the glass base plate, the niobium pentoxide film layer, the silicon dioxide film layer and the transparent electrode graph and the total light transmission rate is less than 1%. In light of that the light transmission rate of the touch panel (non-ITO area) in the prior art to the visual light is 90%, the light transmission rate of the ITO area to the visual light is 89.5 to 90.5%, the disapparate function is achieved, but the whole light transmission rate is relatively small, the touch panel has the advantages that the disapparate effect is achieved while over 3% of the light transmission rate is raised, and therefore, the brightness of the touch panel is obviously improved, and the visual effect is improved.
Description
Technical field
The invention belongs to technical field of touch control, particularly a kind of contact panel and preparation method thereof.
Background technology
The structure of capacitive touch screen mainly plates the thin-film conductor layers of layer of transparent in glass screen, then at the additional lastblock cover glass of conductor layer, two Glass Design can thoroughly protect conductor layer and inductor.Along with the requirement of people to touch-screen product light transmission is more and more higher, the anti-reflection film of improving product transmitance also can continually develop and studying, prior art mainly carrys out the transmitance of improving product as anti-reflection film by vacuum evaporation magnesium fluoride (MgF2), but for the magnesium fluoride film of fixing thickness, usually part luminous energy is still had to be reflected, in addition for the light of other wavelength, the thickness of given rete is not 1/4 of these light wavelength in the film, and antireflective effect is poor.Under normal conditions, incident light is white light, and anti-reflection film can only play anti-reflection effect to the light of certain wavelength, and the light reflectivity of other wavelength is still higher.In addition, the glass baseplate surface of touch-screen arranges ITO circuit, and one side ito glass reflectivity is higher, there will be shadow at the bottom of ITO, in order to eliminate end shadow, usually increase the shadow layer that disappears, and this increase disappearing shadow layer also reduces the transmitance of whole panel.
Summary of the invention
The object of the present invention is to provide a kind of contact panel, make it to eliminate the transmittance that shadow at the bottom of electrode can increase again panel.
The present invention realizes like this, a kind of contact panel, comprises glass substrate, arranges niobium pentaoxide rete and silica coating on a surface of described glass substrate successively lamination, be provided with transparency electrode figure in the surface of described silica coating, the thickness of described niobium pentaoxide rete is
the thickness of described silica coating is
described glass substrate, niobium pentaoxide rete and the silica coating total transmitance to visible ray is greater than 93%, and described glass substrate, niobium pentaoxide rete, silica coating and transparency electrode figure differ within 1% with described glass substrate, niobium pentaoxide rete and the silica coating total transmitance to visible ray total transmitance of visible ray.
Another object of the present invention is to the method for making that a kind of contact panel is provided, at least comprise the steps:
At a surface deposition thickness of glass substrate be
niobium pentaoxide rete, and intermolecular when ensureing film forming, without process gas molecule between molecular group, form ground floor antireflection layer;
At described niobium pentaoxide film layer deposit thickness be
silica coating, and intermolecular when ensureing film forming, without process gas molecule between molecular group, form second layer antireflection layer;
Transparency electrode figure is formed on silica coating.
Described glass substrate, niobium pentaoxide rete and the silica coating total transmitance to visible ray is greater than 93%, and described glass substrate, niobium pentaoxide rete, silica coating and transparency electrode figure differ within 1% with described glass substrate, niobium pentaoxide rete and the silica coating total transmitance to visible ray total transmitance of visible ray.
The present invention arranges niobium pentaoxide rete and the silica coating of above-mentioned thickness on the glass substrate, its transmitance can reach more than 93%, and within the transmitance in ITO region also reaches more than 92%, two place transmitances differences 1%, while realization disappears shadow, there is higher transmitance.In prior art, contact panel (non-ITO region) is 90% to the transmitance of visible ray, ITO region is 89.5% ~ 90.5% to the transmitance of visible ray, although achieve the shadow function that disappears, but overall transmitance is on the low side, brightness is inadequate, the present invention adds the transmitance of more than 3% while guarantee disappears shadow effect, the brightness of contact panel is obviously increased, improves visual effect.
Accompanying drawing explanation
Fig. 1 is the structural representation of the contact panel that the embodiment of the present invention provides;
Fig. 2 is the anti-reflection schematic diagram of the contact panel that the embodiment of the present invention provides;
Fig. 3 is the process flow diagram of the method for making of the contact panel that the embodiment of the present invention provides.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
Below in conjunction with specific embodiment, specific implementation of the present invention is described in detail:
Please refer to Fig. 1, the embodiment of the present invention provides a kind of contact panel, this contact panel at least comprises a glass substrate 101, on a surface of this glass substrate 101 successively lamination, the first antireflection layer-niobium pentaoxide rete 102 is set, with the second antireflection layer-silica coating 103, this niobium pentaoxide rete 102 and silica coating 103 have again the shadow function that disappears as anti-reflection film simultaneously, be provided with transparency electrode figure 104 on the surface of silica coating 103, this transparency electrode figure 104 is generally ITO electrode figure.Niobium pentaoxide rete 102 and silica coating 103 form anti-reflection film, and the thickness of niobium pentaoxide rete 102 is wherein
more preferably
the thickness of silica coating 103 is
wherein, total transmitance of glass substrate 101, niobium pentaoxide rete 102 and silica coating 103 pairs of visible rays can reach more than 93%, and total transmitance of glass substrate 101, niobium pentaoxide rete 102, silica coating 103 and transparency electrode figure 104 pairs of visible rays also can reach more than 92%, differ within 1% with total transmitance of glass substrate 101, niobium pentaoxide rete 102 and silica coating 103 pairs of visible rays.
As a kind of embodiment, total transmitance of glass substrate 101, niobium pentaoxide rete 102 and silica coating 103 pairs of visible rays is 93% ~ 94%, and total transmitance of glass substrate 101, niobium pentaoxide rete 102, silica coating 103 and transparency electrode figure 104 pairs of visible rays is 92.5% ~ 93.5%, within the transmitance difference 1% of the two, ensure that at the bottom of the ITO of contact panel, shadow is eliminated, and there is higher brightness.
With further reference to Fig. 2, niobium pentaoxide rete 102 is as ground floor antireflection layer, and its THICKNESS CONTROL exists
for the visible ray of 460 ~ 760nm, its thickness is about this wave band visible ray at 1/4 of niobium pentaoxide rete 102 medium wavelength, in addition, because light can produce the phase jump of π when different medium surface reflection, therefore the phase differential of π is produced between the light beam L1 of visible ray L0 after niobium pentaoxide rete 102 reflects and the light beam L2 through niobium pentaoxide rete 102 and after being reflected by silica coating 103, realize disappearing mutually of reflected light, i.e. antireflective effect.For realizing anti-reflection wave band by niobium pentaoxide rete 102, can by rationally arranging the thickness of silica coating 103, this wave band is disappeared with the same band of light reflected by niobium pentaoxide rete 102 mutually through the light L3 of silica coating 103 outgoing after niobium pentaoxide rete 102, realizes the antireflective effect of this wave band.Like this, visible ray all band can realize anti-reflection through niobium pentaoxide rete 102 and silica coating 103.Meanwhile, this niobium pentaoxide rete 102 and silica coating 103 pairs of ITO electrode patterns disappear shadow, and therefore this anti-reflection film improves transmitance while realization disappears shadow.
When prior art adopts niobium pentaoxide rete to carry out disappearing shadow, contact panel (non-ITO region) is 90% to total transmitance of visible ray, the total transmitance of region to visible ray with ITO is 89.5% ~ 90.5%, although achieve the shadow function that disappears, but overall transmitance is on the low side, brightness is inadequate, visual effect is not good, and the present embodiment adopts above-mentioned niobium pentaoxide rete and silica coating as anti-reflection film, the transmitance of more than 3% is added while realization disappears shadow, contact panel brightness is obviously increased, improves visual effect.
The embodiment of the present invention provides a kind of method for making making above-mentioned contact panel further, and it at least comprises the steps, as Fig. 3:
In step S101, at a surface deposition thickness of glass substrate 101 be
niobium pentaoxide rete 102, and intermolecular when ensureing film forming, without process gas molecule between molecular group, form ground floor antireflection layer;
In step s 102, on niobium pentaoxide rete 102, deposit thickness is
silica coating 103, and intermolecular when ensureing film forming, without process gas molecule between molecular group, form second layer antireflection layer;
In step s 103, on silica coating 103, transparency electrode figure 104 is formed.
Concrete, the present embodiment prepares this anti-reflection film by following process, vertical type full automatic continuous magnetron sputtering coating machine is adopted to carry out plated film, in niobium, silicon target cavity, O2, Ar process gas is passed into during plated film, O2 flow is 100 ~ 130Sccm, Ar flow is 200 ~ 220Sccm, and plated film vacuum tightness is 2.0 × 10
-1pa ~ 3.0 × 10
-1between Pa, coating chamber transmission beat is 100 ~ 120 seconds, niobium, silicon sputtering power are 5KW ~ 5.5KW, plated film voltage is 380V ~ 420V, coating temperature is 250 DEG C ~ 280 DEG C, substrate temperature controls at 150 DEG C ~ 180 DEG C, intermolecular when ensureing film forming in coating process, without process gas molecule between molecular group.
First plating thickness through above-mentioned technique is
niobium pentaoxide rete 102, then plate thickness and be
silica coating 103, forms double-layer anti-reflection membrane structure, makes this membrane structure have good optical characteristics, can not only eliminate shadow at the bottom of ITO, can also strengthen transmittance.
By the contact panel that said method makes, glass substrate, niobium pentaoxide rete and the silica coating total transmitance to visible ray is 93% ~ 94%, glass substrate, niobium pentaoxide rete, silica coating and the transparency electrode figure total transmitance to visible ray is 92.5% ~ 93.5%, differ within 1% with glass substrate, niobium pentaoxide rete and the silica coating total transmitance to visible ray, while ensureing the good shadow effect that disappears, improve the brightness of contact panel, and then improve visual effect.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. a contact panel, it is characterized in that, comprise glass substrate, niobium pentaoxide rete and silica coating are set on a surface of described glass substrate successively lamination, be provided with transparency electrode figure in the surface of described silica coating, the thickness of described niobium pentaoxide rete is
the thickness of described silica coating is
described glass substrate, niobium pentaoxide rete and the silica coating total transmitance to visible ray is greater than 93%, and described glass substrate, niobium pentaoxide rete, silica coating and transparency electrode figure differ within 1% with described glass substrate, niobium pentaoxide rete and the silica coating total transmitance to visible ray total transmitance of visible ray.
2. contact panel as claimed in claim 1, it is characterized in that, the thickness of described niobium pentaoxide rete is
3. contact panel as claimed in claim 1, it is characterized in that, described glass substrate, niobium pentaoxide rete and the silica coating total transmitance to visible ray is 93% ~ 94%, and described glass substrate, niobium pentaoxide rete, silica coating and the transparency electrode figure total transmitance to visible ray is 92.5% ~ 93.5%.
4. contact panel as claimed in claim 1, it is characterized in that, described niobium pentaoxide rete is the antireflection layer of the visible ray being 460 ~ 760nm for wavelength.
5. contact panel as claimed in claim 4, is characterized in that, the rete that described niobium pentaoxide rete and silica coating are formed is be the antireflection layer of the visible ray outside 460 ~ 760nm for wavelength.
6. a method for making for contact panel, is characterized in that, at least comprises the steps:
At a surface deposition thickness of glass substrate be
niobium pentaoxide rete, and intermolecular when ensureing film forming, without process gas molecule between molecular group, form ground floor antireflection layer;
At described niobium pentaoxide film layer deposit thickness be
silica coating, and intermolecular when ensureing film forming, without process gas molecule between molecular group, form second layer antireflection layer;
Transparency electrode figure is formed on silica coating 103;
Described glass substrate, niobium pentaoxide rete and the silica coating total transmitance to visible ray is greater than 93%, and described glass substrate, niobium pentaoxide rete, silica coating and transparency electrode figure differ within 1% with described glass substrate, niobium pentaoxide rete and the silica coating total transmitance to visible ray total transmitance of visible ray.
7. method for making as claimed in claim 6, it is characterized in that, a described surface deposition thickness at glass substrate is
the step of niobium pentaoxide rete be specially:
Adopt vertical type full automatic continuous magnetron sputtering coating machine to carry out plated film, in niobium target cavity, pass into O2, Ar process gas during plated film, O2 flow is 100 ~ 130Sccm, Ar flow is 200 ~ 220Sccm, and plated film vacuum tightness is 2.0 × 10
-1pa ~ 3.0 × 10
-1between Pa, coating chamber transmission beat is 100 ~ 120 seconds, and niobium sputtering power is 5KW ~ 5.5KW, and plated film voltage is 380V ~ 420V;
At described niobium pentaoxide film layer deposit thickness be
the step of silica coating be specially:
Adopt vertical type full automatic continuous magnetron sputtering coating machine to carry out plated film, in silicon target cavity, pass into O2, Ar process gas during plated film, O2 flow is 100 ~ 130Sccm, Ar flow is 200 ~ 220Sccm, and plated film vacuum tightness is 2.0 × 10
-1pa ~ 3.0 × 10
-1between Pa, coating chamber transmission beat is 100 ~ 120 seconds, and silicon sputtering power is 5KW ~ 5.5KW, and plated film voltage is 380V ~ 420V.
8. method for making as claimed in claim 6, it is characterized in that, the thickness of described niobium pentaoxide rete is
9. method for making as claimed in claim 6, it is characterized in that, described glass substrate, niobium pentaoxide rete and the silica coating total transmitance to visible ray is 93% ~ 94%.
10. method for making as claimed in claim 9, it is characterized in that, described glass substrate, niobium pentaoxide rete, silica coating and the transparency electrode figure total transmitance to visible ray is 92.5% ~ 93.5%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410849559.1A CN104503646A (en) | 2014-12-30 | 2014-12-30 | Touch panel and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410849559.1A CN104503646A (en) | 2014-12-30 | 2014-12-30 | Touch panel and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104503646A true CN104503646A (en) | 2015-04-08 |
Family
ID=52945047
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410849559.1A Pending CN104503646A (en) | 2014-12-30 | 2014-12-30 | Touch panel and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104503646A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021068435A1 (en) * | 2019-10-08 | 2021-04-15 | 武汉华星光电半导体显示技术有限公司 | Array substrate and display panel |
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| CN101475317A (en) * | 2009-02-13 | 2009-07-08 | 江苏津通先锋光电显示技术有限公司 | High transmittance conductive glass for touch screen and technique for producing the same |
| CN103102084A (en) * | 2013-01-21 | 2013-05-15 | 深圳市正星光电技术有限公司 | Glass for broadband high transmittance OGS (one glass solution) and preparation method thereof |
| CN203032032U (en) * | 2012-12-13 | 2013-07-03 | 深圳力合光电传感股份有限公司 | ITO (indium tin oxide) glass for capacitive touch screen |
| CN203510854U (en) * | 2013-09-30 | 2014-04-02 | 深圳市正星光电技术有限公司 | High transmittance glass and touch display screen |
| CN204360362U (en) * | 2014-12-30 | 2015-05-27 | 深圳力合光电传感股份有限公司 | A kind of contact panel |
-
2014
- 2014-12-30 CN CN201410849559.1A patent/CN104503646A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101475317A (en) * | 2009-02-13 | 2009-07-08 | 江苏津通先锋光电显示技术有限公司 | High transmittance conductive glass for touch screen and technique for producing the same |
| CN203032032U (en) * | 2012-12-13 | 2013-07-03 | 深圳力合光电传感股份有限公司 | ITO (indium tin oxide) glass for capacitive touch screen |
| CN103102084A (en) * | 2013-01-21 | 2013-05-15 | 深圳市正星光电技术有限公司 | Glass for broadband high transmittance OGS (one glass solution) and preparation method thereof |
| CN203510854U (en) * | 2013-09-30 | 2014-04-02 | 深圳市正星光电技术有限公司 | High transmittance glass and touch display screen |
| CN204360362U (en) * | 2014-12-30 | 2015-05-27 | 深圳力合光电传感股份有限公司 | A kind of contact panel |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021068435A1 (en) * | 2019-10-08 | 2021-04-15 | 武汉华星光电半导体显示技术有限公司 | Array substrate and display panel |
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Application publication date: 20150408 |
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