CN104495741B - Surface sensing chip encapsulating structure and production method - Google Patents
Surface sensing chip encapsulating structure and production method Download PDFInfo
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- CN104495741B CN104495741B CN201410842755.6A CN201410842755A CN104495741B CN 104495741 B CN104495741 B CN 104495741B CN 201410842755 A CN201410842755 A CN 201410842755A CN 104495741 B CN104495741 B CN 104495741B
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Abstract
The invention discloses a kind of surface sensing chip encapsulating structure and production method, the encapsulating structure includes surface sensing chip and functional chip, there is several weld pads and induction zone on the sensing chip first surface of surface, first opening of the second surface formed with corresponding weld pad, insulating layer and metal wiring layer are equipped with first opening, metallic circuit layer sets plastic packaging layer by electrical guiding to the second surface of weld pad on first surface in the periphery of sensing chip；The second surface of induction chip can add functional chip, and functional chip is electrically connected the metal wiring layer on second surface.The present invention uses silicon hole TSV technology, by the second surface for electrically guiding to chip of chip first surface weld pad, reduces encapsulation volume；And crystal wafer chip dimension encapsulation (WLP) technology is utilized, overall package is first carried out, then wafer is cut into single chip, reduce holistic cost；Plastic packaging is carried out to the periphery of chip, adds the reliability of chip.
Description
Technical field
The present invention relates to surface sensing chip encapsulating structure and technique, is specifically related to a kind of surface sensing chip encapsulation knot
Structure and production method.
Background technology
Surface sensing chip or surface induction chip, such as fingerprint recognition surface sensing chip, touch type surface sensing chip
Constantly expanded Deng because of its easy, practicality, application field.The gradual powerful intelligent terminal of function, also begins to carry more next
More surface sensing chips, however, present equipment for packaging it is short and small it is frivolous have a higher requirement, carrying it is such
The encapsulation volume of surface sensing chip will also pursue minimum.
But surface sensing chip is connected by traditional surface sensing chip generally use wire bonding technique with substrate, specifically
Structure is：Surface sensing chip has first surface and the second surface opposite with first surface；The first of surface sensing chip
There are induction zone and several weld pads on surface, be electrically connected between weld pad and induction zone；Have on substrate and sense core with surface
Corresponding second weld pad of piece, when surface sensing chip is connected with substrate, on the weld pad and substrate of surface sensing chip first surface
Corresponding second weld pad is electrically connected by bonding wire.The surface sensing chip encapsulating structure of this form, surface sensing chip and base
The routing of plate is highly susceptible to extrude and be broken, and can not place other dielectric layers again above routing, have impact on the encapsulation of product
Yield, also reduces the reliability of product.The surface sensing chip package thickness completed due to the limitation of bonding wire craft, this technique
It is larger, it can not meet that encapsulation volume pursues the requirement minimized.
The content of the invention
In order to solve the above-mentioned technical problem, the present invention proposes a kind of surface sensing chip encapsulating structure and production method, should
Encapsulating structure can reduce package thickness, meet the requirement of surface sensing chip miniaturization；Core is sensed in the encapsulating structure
Piece periphery is equipped with plastic packaging layer, it is possible to increase the reliability of sensing chip；The encapsulating structure is easy to combine other functional chips or base
Plate, strengthens the use function of chip.The production method utilizes crystal wafer chip dimension encapsulation technology, first carries out overall package, then
Wafer is cut into single chip, reduces production cost.
The technical proposal of the invention is realized in this way：
A kind of surface sensing chip encapsulating structure, including the sensing core of the surface with opposite first surface and second surface
Piece, the first surface have induction zone and several weld pads positioned at the induction zone periphery, several described weld pads and institute
State induction zone electric connection；The first plastic packaging layer formed with the exposure induction zone on the first surface；The second surface
The upper position opposite with each weld pad is open formed with first, shape on the inner wall of the second surface and first opening
Into there is the insulating layer that exposes the weld pad, formed with the metal line for being electrically connected the weld pad expose portion on the insulating layer
Layer；Matcoveredn is formed outside the metal wiring layer.
As a further improvement on the present invention, the first plastic packaging layer covers in the induction zone, covers in the sensing
The first plastic packaging floor in area has setting thickness.
As a further improvement on the present invention, the induction zone exposed is equipped with protection cap.
As a further improvement on the present invention, the protective layer is the second plastic packaging layer or insulating protective layer.
As a further improvement on the present invention, it is additionally provided with one or more functions chip, the functional chip and described the
Metal wiring layer on two surfaces is electrically connected.
As a further improvement on the present invention, when the protective layer is the second plastic packaging layer, the functional chip is fixed
Between the insulating layer on the second surface and the second plastic packaging layer, and the functional chip by way of wire bonding with described the
Metal wiring layer on two surfaces is electrically connected.
As a further improvement on the present invention, the functional chip is by way of flip chip bonding and on the second surface
Metal wiring layer is electrically connected.
As a further improvement on the present invention, the protective layer of the second surface is equipped with some and hardware cloth
The solder bump of line layer connection, the solder bump are used to be electrically connected external devices.
A kind of production method of surface sensing chip encapsulating structure, includes the following steps：
A, preparing one has the wafer of several surface sensing chip units, and each surface sensing chip unit has
First surface and the second surface opposite with first surface；There is induction zone on the first surface of the surface sensing chip unit
With several weld pads positioned at the induction zone periphery, several described weld pads are electrically connected with the induction zone；
B, the first plastic packaging layer of each induction zone of one layer of exposure is formed on the first surface of the wafer；
C, the second surface of the wafer is thinned；
D, position opposite with the weld pad of surface sensing chip unit on the second surface of the wafer carves first and opens
Mouthful, expose its corresponding weld pad；
E, one layer of covering is exhausted on the second surface of the step d wafers formed and the inner wall of each first opening
Edge layer, and the corresponding weld pad of each first opening is exposed；
F, on the insulating layer that step e is formed and the position of the weld pad that exposes is laid with one layer of metal line
Layer；
G, layer protective layer is formed outside the metal wiring layer that step f is formed, and is reserved on the protective layer of second surface
The second opening that metal wiring layer is connected with external devices.
H, solder bump is planted in step g part or all of second openings formed；
I, to step H-shaped into wafer cut, form single surface sensing chip encapsulating structure.
As a further improvement on the present invention, between step g and step h, the metal wiring layer on second surface is increased
The step of electrical connection function chip.
The beneficial effects of the invention are as follows：The present invention provides a kind of surface sensing chip encapsulating structure and production method, passes through
Opposite with the weld pad of first surface first is formed on the second surface of surface sensing chip to be open, and in second surface and the
Insulating layer and metal wiring layer are formed in one opening, the weld pad of surface sensing chip first surface electrically can be guided to surface
The second surface of sensing chip, in this way, when connecting external devices (substrate or functional chip), can pass through solder bump and weldering
The Flip Chip Bond Technique of disk is full therefore, it is possible to reach the encapsulation volume for reducing surface sensing chip instead of the wire bonding technique of routing
The purpose of the requirement of sufficient surface sensing chip miniaturization.The encapsulating structure to surface sensing chip periphery carry out plastic packaging or
Insulating protective layer is set, further increases the reliability of chip.The production method utilizes crystal wafer chip dimension encapsulation (WLP)
Technology, first carries out overall package, then wafer is cut into single chip, reduces holistic cost.
Brief description of the drawings
Fig. 1 is the crystal circle structure schematic diagram described in 1 step a of the embodiment of the present invention；
Fig. 2 is the crystal circle structure schematic diagram after 1 step b of the embodiment of the present invention；
The first opening that Fig. 3 a are formed after being 1 step d of the embodiment of the present invention is the crystal circle structure schematic diagram of groove；
Fig. 3 b be in Fig. 3 a A-A' to cross-sectional view；
Fig. 4 is that the crystal circle structure schematic diagram after insulating layer is formed in 1 step e of the embodiment of the present invention；
Fig. 5 is to expose the crystal circle structure schematic diagram after weld pad in 1 step e of the embodiment of the present invention；
Fig. 6 is the crystal circle structure schematic diagram after 1 step f of the embodiment of the present invention；
Fig. 7 is the crystal circle structure schematic diagram after 1 step g of the embodiment of the present invention；
After Fig. 8 is 1 step h of the embodiment of the present invention and flip chip bonding connects the crystal circle structure schematic diagram of a functional chip；
The first opening that Fig. 9 a are formed after being 1 step d of the embodiment of the present invention is the crystal circle structure signal that groove is combined with hole
Figure；
Fig. 9 b be in Fig. 9 a B-B' to cross-sectional view；
The first opening that Figure 10 a are formed after being 1 step d of the embodiment of the present invention is the crystal circle structure schematic diagram of straight hole；
Figure 10 b be in Figure 10 a C-C' to cross-sectional view；
Figure 11 is 1 surface sensing chip encapsulating structure schematic diagram of the embodiment of the present invention；
Figure 12 is 2 surface sensing chip encapsulating structure schematic diagram of the embodiment of the present invention；
Figure 13 is 3 surface sensing chip encapsulating structure schematic diagram of the embodiment of the present invention；
Figure 14 is 4 surface sensing chip encapsulating structure schematic diagram of the embodiment of the present invention.
With reference to attached drawing, make the following instructions：
1 --- surface sensing chip 101 --- first surface
102 --- second surface 103 --- induction zones
104 --- weld pad 2 --- first plastic packaging layer
3 --- the first opening 4 --- insulating layers
5 --- metal wiring layer 6 --- protection caps
7 --- the second plastic packaging layer 8 --- insulating protective layers
9 --- functional chip 10 --- solder bumps
11 --- the second opening
Embodiment
Embodiment 1
As shown in figure 11, a kind of surface sensing chip encapsulating structure, including with opposite 101 and second table of first surface
The surface sensing chip in face 102, the first surface 101 have induction zone 103 and positioned at some of 103 periphery of induction zone
A weld pad 104, several described weld pads 104 are electrically connected with the induction zone 103；Formed with exposure on the first surface 101
First plastic packaging layer 2 of the induction zone 103, the induction zone 103 exposed are equipped with protection cap 6；The second surface 102
Formed with the first opening 3, the second surface 102 and described first is open 3 for the upper position opposite with each weld pad 104
It is sudden and violent formed with the weld pad 104 is electrically connected on the insulating layer 4 formed with the insulating layer 4 for exposing the weld pad 104 on inner wall
Reveal the metal wiring layer 5 of part；Matcoveredn is formed outside the metal wiring layer 5, and the protective layer is one layer of second plastic packaging
Layer 7；On metal wiring layer 5 on the second surface 102 formed be pierced by the second plastic packaging layer 7 be used for connect external devices
Solder bump 10, to connect external circuit.
In said structure, by forming the first surface with induction zone 103 on the second surface 102 of surface sensing chip
The first opposite opening 3 of 101 weld pad 104, and sequentially form insulating layer 4 and metal in the opening of second surface 102 and first 3
Wiring layer 5, can be by the second table for electrically guiding to surface sensing chip of the weld pad 104 of surface sensing chip first surface 101
Face 102, in this way, when being attached with external devices, such as the second weld pad on substrate, can be by connecting second surface institute
Some solder bumps of metal wiring layer and the Flip Chip Bond Technique of the second weld pad are stated, instead of the wire bonding technique of routing, therefore, it is possible to
Reach the encapsulation volume for reducing surface sensing chip, meet the purpose of the requirement of surface sensing chip miniaturization.It is in addition, logical
The first surface 101 crossed in surface sensing chip carries out plastic packaging with second surface 102 with a kind of capsulation material, forms the first plastic packaging
2 and second plastic packaging layer 7 of layer, available for the damage for preventing outer bound pair chip, the reliability of raising surface sensing chip.In order to improve
The sensitivity of induction zone 103, the present embodiment selection are covered on induction zone 103 with one layer of protection cap 6.It is furthermore preferred that the protection
The material of lid 6 can be the protection materials such as glass, film and glass ceramics, and the thickness of protection cap 6 is between 1 micron -400 microns.
Preferably, the material of the metal wiring layer 5 is copper or aluminium or nickel or gold or titanium or alloy.
Preferably, first opening 3 be groove, groove and the combination in hole or straight hole, the structure of groove referring to Fig. 3 a and
Fig. 3 b, wherein Fig. 3 a be second surface overlook the first hatch frame schematic diagram, Fig. 3 b be Fig. 3 a AA ' to profile；It is recessed
For the combining structure in groove and hole referring to Fig. 9 a and Fig. 9 b, wherein Fig. 9 a are the first hatch frame schematic diagram that second surface is overlooked, and are schemed
9b is profiles of Fig. 9 a at BB ' places；For the structure of straight hole referring to Figure 10 a and 10b, wherein Figure 10 a are that second surface is overlooked
One hatch frame schematic diagram, Figure 10 b are profiles of Figure 10 a at CC ' places.
As a kind of preferred embodiment, the production method of 1 surface sensing chip encapsulating structure of the present embodiment, including following step
Suddenly：
A, referring to Fig. 1, preparing one has the wafer of several surface sensing chip units, each surface sensing chip
Unit has first surface 101 and the second surface 102 opposite with first surface 101；The of the surface sensing chip unit
There are induction zone 103 and some weld pads 104 positioned at 103 periphery of induction zone, several described weld pads on one surface 101
104 are electrically connected with the induction zone 103；
B, referring to Fig. 2, the protection for covering the induction zone 103 is formed on the first surface 101 of the wafer
Lid 6, and one layer of first plastic packaging layer 2 is formed on the first surface 101 of the periphery of protection cap 6 and periphery；
C, the second surface 102 of the wafer is thinned；
D, referring to Fig. 3 b, on the second surface 102 of the wafer with 104 phase of weld pad of each surface sensing chip unit
To position carve the first opening 3, expose its corresponding weld pad 104；
E, referring to Fig. 4 and Fig. 5, second surface 102 and each first opening 3 in the wafer that step d is formed
Inner wall on cover a layer insulating 4, and make it is described first opening 3 corresponding weld pads 104 be exposed；When it is implemented, the
One opening 3 can be formed by etching and machine cuts, and forming groove in wafer second surface 102 by photoetching process first opens
Mouthful, then the wafer of etched recesses aperture position, is laid with exhausted on the face comprising etched recesses surface and wafer second surface 102
Edge layer 4, finally, carries out etched recesses bottom the side wall that machine cuts expose weld pad 104.
F, referring to Fig. 6, on the insulating layer 4 that step e is formed and the position of the weld pad 104 that exposes is laid with one
Layer metal wiring layer 5, i.e. metal wiring layer 5 electrically guide to weld pad 104 on the second surface 102 of surface sensing chip.
G, referring to Fig. 7, one layer of second plastic packaging layer 7 is formed outside the metal wiring layer 5 that step f is formed, and in second surface
The second opening 11 that metal wiring layer 5 is connected with external devices is reserved on 102 the second plastic packaging layer 7.
H, referring to Fig. 8, solder bump 10 is planted at the second opening 11 that step g is formed；
I, to step H-shaped into wafer cut, form single surface sensing chip encapsulating structure.
Embodiment 2
The present embodiment 2 includes all technical characteristics in embodiment 1, and as shown in figure 12, difference lies in be additionally provided with a work(for it
Energy chip 9, the functional chip 9 is electrically connected with the metal wiring layer 5 on the second surface 102, and functional chip 9 is fixedly arranged on
Between 4 and second plastic packaging layer 7 of insulating layer on second surface 102, and the functional chip 9 by way of wire bonding with described the
Metal wiring layer 5 on two surfaces 102 is electrically connected.
The production method of 2 surface sensing chip encapsulating structure of the present embodiment, includes the following steps：
A, referring to Fig. 1, preparing one has the wafer of several surface sensing chip units, each surface sensing chip
Unit has first surface 101 and the second surface 102 opposite with first surface 101；The of the surface sensing chip unit
There are induction zone 103 and some weld pads 104 positioned at 103 periphery of induction zone, several described weld pads on one surface 101
104 are electrically connected with the induction zone 103；
B, referring to Fig. 2, the protection for covering the induction zone 103 is formed on the first surface 101 of the wafer
Lid 6, and one layer of first plastic packaging layer 2 is formed on the first surface 101 of the periphery of protection cap 6 and periphery；
C, the second surface 102 of the wafer is thinned；
D, referring to Fig. 3 b, on the second surface 102 of the wafer with 104 phase of weld pad of each surface sensing chip unit
To position carve the first opening 3, expose its corresponding weld pad 104；
E, referring to Fig. 4 and Fig. 5, second surface 102 and each first opening 3 in the wafer that step d is formed
Inner wall on cover a layer insulating 4, and make it is each it is described first opening 3 corresponding weld pads 104 be exposed；
F, referring to Fig. 6, on the insulating layer 4 that step e is formed and the position of the weld pad 104 that exposes is laid with one
Layer metal wiring layer 5, and the insulating layer 4 pre-fixed at 9 position of functional chip is exposed, wherein, metal wiring layer 5 forms some
A terminal pad for linkage function chip 9；
One functional chip 9 is provided, the functional chip 9 is fixed on the insulating layer 4 that step f exposes, and pass through wire bonding g,
Mode functional chip 9 is electrically connected with the metal wiring layer 5 on the second surface 102；When it is implemented, functional chip 9
It can be fixed on viscose on the insulating layer 4 on wafer second surface 102, then in a manner of bonding wire etc. and on second surface 102
Metal wiring layer 5 be connected.
H, one layer of second plastic packaging layer 7 is formed outside the metal wiring layer 5 that step g is formed and outside functional chip 9, and second
The second opening 11 that metal wiring layer 5 is connected with external devices is reserved on the second plastic packaging layer 7 on surface 102.
I, step H-shaped into second opening 11 at plant solder bump 10；
J, the step i wafers formed are cut, forms single surface sensing chip encapsulating structure.
Embodiment 3
The present embodiment 3 includes all technical characteristics in embodiment 1, and as shown in figure 13, difference lies in 1, be additionally provided with one for it
Functional chip 9, the functional chip 9 is electrically connected with the metal wiring layer 5 on the second surface 102, and functional chip 9 passes through
The mode of flip chip bonding is electrically connected with the metal wiring layer 5 on the second surface 102.2nd, formed and covered on first surface 101
The protection cap 6 of the induction zone 103 is replaced by one layer of first plastic packaging layer 2, and the first plastic packaging layer 2 covers in the induction zone 103, is hidden
Covering the first plastic packaging layer 2 of the induction zone 103 has setting thickness, which can have relatively large Mohs
Hardness.
The production method of 3 surface sensing chip encapsulating structure of the present embodiment, includes the following steps：
A, referring to Fig. 1, preparing one has the wafer of several surface sensing chip units, each surface sensing chip
Unit has first surface 101 and the second surface 102 opposite with first surface 101；The of the surface sensing chip unit
There are induction zone 103 and some weld pads 104 positioned at 103 periphery of induction zone, several described weld pads on one surface 101
104 are electrically connected with the induction zone 103；
B, the first plastic packaging layer 2 is formed on the first surface 101 of the wafer；And the first plastic packaging layer 2 covers
Induction zone 103 is stated in residence, and covering in the first plastic packaging layer 2 of the induction zone 103 has setting thickness；
C, the second surface 102 of the wafer is thinned；
D, position opposite with the weld pad 104 of each surface sensing chip unit on the second surface 102 of the wafer
The first opening 3 is carved, the first opening 3 removes the base material of the corresponding top of weld pad 104；
E, one is covered on the second surface 102 of the step d wafers formed and the inner wall of each first opening 3
Layer insulating 4, and first opening, 3 corresponding weld pads 104 are exposed；
F, on the insulating layer 4 that step e is formed and the position of the weld pad 104 that exposes is laid with one layer of hardware cloth
Line layer 5；
G, a functional chip 9 is separately provided, the functional chip 9 is by way of flip chip bonding and on the second surface 102
Metal wiring layer 5 be electrically connected.
H, one layer of second plastic packaging layer 7 is formed outside the metal wiring layer 5 that step g is formed, and the second of second surface 102
The second opening 11 that metal wiring layer 5 is connected with external devices is reserved on plastic packaging layer 7.
I, step H-shaped into second opening 11 at plant solder bump 10；
J, the step i wafers formed are cut, forms single surface sensing chip encapsulating structure.
Embodiment 4
The present embodiment 4 includes all technical characteristics in embodiment 1, and as shown in figure 14, difference lies in the metal line for it
Matcoveredn is formed outside layer 5, and the protective layer is one layer of insulating protective layer 8.Insulating protective layer 8 is used to prevent metal wiring layer
5 are aoxidized, and can be photoresist, easy to the opening of exposure second 11.
The production method of 4 surface sensing chip encapsulating structure of the present embodiment, includes the following steps：
A, referring to Fig. 1, preparing one has the wafer of several surface sensing chip units, each surface sensing chip
Unit has first surface 101 and the second surface 102 opposite with first surface 101；The of the surface sensing chip unit
There are induction zone 103 and some weld pads 104 positioned at 103 periphery of induction zone, several described weld pads on one surface 101
104 are electrically connected with the induction zone 103；
B, referring to Fig. 2, the protection for covering the induction zone 103 is formed on the first surface 101 of the wafer
Lid 6, and one layer of first plastic packaging layer 2 is formed on the first surface 101 of the periphery of protection cap 6 and periphery；
C, the second surface 102 of the wafer is thinned；
D, referring to Fig. 3 b, on the second surface 102 of the wafer with 104 phase of weld pad of each surface sensing chip unit
To position carve the first opening 3, the first opening 3 removes the base material of its corresponding top of weld pad 104；
E, referring to Fig. 4 and Fig. 5, second surface 102 and each first opening 3 in the wafer that step d is formed
Inner wall on cover a layer insulating 4, and make it is each it is described first opening 3 corresponding weld pads 104 be exposed；
F, referring to Fig. 6, on the insulating layer 4 that step e is formed and the position of the weld pad 104 that exposes is laid with one
Layer metal wiring layer 5；
G, referring to Fig. 7, one layer of insulating protective layer 8 is formed outside the metal wiring layer 5 that step f is formed, and in second surface
The second opening 11 that metal wiring layer 5 is connected with external devices is reserved on 102 insulating protective layer 8.
H, referring to Fig. 8, solder bump 10 is planted at the second opening 11 that step g is formed；
I, to step H-shaped into wafer cut, form single surface sensing chip encapsulating structure.
To sum up, the present invention proposes that a kind of surface sensing chip encapsulating structure and production method, the encapsulating structure can reduce
Package thickness, meets the requirement of surface sensing chip miniaturization；Sensing chip periphery is equipped with plastic packaging layer in the encapsulating structure,
The reliability of sensing chip can be improved；The encapsulating structure strengthens the use of chip easy to combine other functional chips or substrate
Function.The production method utilizes crystal wafer chip dimension encapsulation technology, first carries out overall package, then wafer is cut into single core
Piece, reduces production cost.
Above example is referring to the drawings, to a preferred embodiment of the present invention will be described in detail.Those skilled in the art
Member by above-described embodiment carry out various forms on modification or change, but without departing substantially from the present invention essence in the case of, all
Fall within the scope and spirit of the invention.
Claims (2)
1. a kind of production method of surface sensing chip encapsulating structure, it is characterised in that include the following steps：
A, preparing one has the wafer of several surface sensing chip units, and each surface sensing chip unit has first
Surface and the second surface opposite with first surface；There is induction zone and position on the first surface of the surface sensing chip unit
Several weld pads in the induction zone periphery, several described weld pads are electrically connected with the induction zone；
B, one layer of first plastic packaging layer is formed on the first surface of the wafer, the first plastic packaging layer covers in the sense
Area is answered, covering in the first plastic packaging layer of the induction zone has setting thickness；Alternatively, the first plastic packaging layer only expose it is described
Induction zone；
C, the second surface of the wafer is thinned；
D, position opposite with the weld pad of each surface sensing chip unit on the second surface of the wafer carves first and opens
Mouthful, expose its corresponding weld pad；
E, one layer of insulation of covering on the second surface of the step d wafers formed and the inner wall of each first opening
Layer, and the corresponding weld pad of each first opening is exposed；
F, on the insulating layer that step e is formed and the position of the weld pad that exposes is laid with one layer of metal wiring layer；
G, layer protective layer is formed outside the metal wiring layer that step f is formed, and metal is reserved on the protective layer of second surface
The second opening (11) that wiring layer is connected with external devices；
H, solder bump is planted in step g part or all of second openings formed；
I, to step H-shaped into wafer cut, form single surface sensing chip encapsulating structure.
2. the production method of sensing chip encapsulating structure in surface according to claim 1, it is characterised in that step f with
Between step g, increase second surface on metal wiring layer electrical connection function chip the step of.
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| CN106684119B (en) * | 2017-03-01 | 2024-02-20 | 华进半导体封装先导技术研发中心有限公司 | Chip packaging structure and preparation method thereof |
| CN107545246A (en) * | 2017-08-17 | 2018-01-05 | 华天科技（西安）有限公司 | A kind of encapsulating structure and its method for packing of fingerprint recognition chip |
| CN107464760A (en) * | 2017-08-17 | 2017-12-12 | 华天科技（西安）有限公司 | A kind of encapsulating structure and its method for packing of the fingerprint recognition chip with silicon hole |
| CN107958882A (en) * | 2017-12-20 | 2018-04-24 | 苏州晶方半导体科技股份有限公司 | Encapsulating structure of chip and preparation method thereof |
| CN109192706B (en) * | 2018-09-07 | 2024-04-12 | 苏州晶方半导体科技股份有限公司 | Chip packaging structure and chip packaging method |
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