CN104465893A - 一种透光性薄膜太阳电池及其制造方法 - Google Patents
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Abstract
本发明涉及一种透光性薄膜太阳电池及其制造方法,本发明的太阳电池经1064nm的红外激光刻划后的所述透明导电膜TCO玻璃衬底通过掩膜板A沉积所述半导体层;在所述半导体层上通过掩膜板B蒸镀或磁控溅射制备背电极层形成电池芯板,电池芯板通过双玻璃和乙烯-醋酸乙烯共聚物EVA材料层压制工艺封装成透光薄膜太阳电池组件。本发明能够低成本、高质量生产大面积高透光性薄膜太阳电池。
Description
技术领域:
本发明涉及一种硅薄膜太阳电池及其制造方法,更具体涉及一种用于光伏建筑一体化的透光性薄膜太阳电池及其制造方法。
背景技术:
传统硅基薄膜太阳电池,一般不具有透光性,结构为:在带有透明导电膜的玻璃基片上用PECVD技术沉积一层硅基薄膜光电转换层,然后蒸镀背电极形成芯板。一块电池包含多个子电池,各子电池通过激光刻划进行内部串联以获得较高的输出电压,传统的制作透光硅薄膜电池的方法有激光技术、喷砂、机械打磨。均是镀膜后再处理掉各功能层,使得工序复杂,其中最为常见的是用激光技术(laser scribe)把硅薄膜和背电极薄膜有选择的从不透光的硅薄膜太阳电池芯片上移除,这样光可以透过被激光移除过的区域,其透光性由被移除的薄膜区域大小决定,透光性和光电转换区域的损失,既输出功率的损耗成正比。用这种移除的方式来制造透光薄膜太阳电池有下列几个缺点:
1)激光移除过程缓慢,限制了电池片的产量;
2)激光处理的图形看起来不统一;
3)移除过程需要昂贵高性能激光处理系统;
针对第1)和3)条,激光移除速度受输出功率、控制平台移动速度等的限制,每次移除的透光性开口孔的直径为30μm-500μm,以20mm子电池宽度的幅面为635×1245mm的常规非晶硅电池芯板为例,一台激光机要使电池芯板达到20%的透光率,每节子电池需要最少刻划8次。而要适应于整条生产线制程需配8台激光机。
针对第2)条,如果要生成更整齐的、激光“点”的位置比较均匀的模式,就会对光伏模块产生非常大的损伤,导致过量的光伏输出功率的损失。
故此,制作透光的基于硅薄膜光伏组件需要一种更好的方法。
发明内容:
本发明的目的是提供一种透光性薄膜太阳电池及其制造方法,本方法能够低成本、高质量生产大面积高透光性薄膜太阳电池。
为实现上述目的,本发明采用以下技术方案:一种透光性薄膜太阳电池制造方法,包括在带有透明导电膜TCO玻璃衬底上用等离子体增强化学气相沉积法沉积半导体层,在所述半导体层上通过蒸镀制备背电极形成电池芯板,经1064nm的红外激光刻划后的所述透明导电膜TCO玻璃衬底通过掩膜板A沉积所述半导体层;在所述半导体层上通过掩膜板B蒸镀或磁控溅射制备背电极层形成电池芯板。
本发明提供的一种透光性薄膜太阳电池制造方法,所述红外激光将所述玻璃衬底上的透明导电膜TCO分割为8-20mm间隔的单元,所述单元间的绝缘电阻为2M。
本发明提供的一种透光性薄膜太阳电池制造方法,所述透明导电膜TCO为氧化铟锡ITO膜、氟掺杂氧化铟锡FTO膜或掺铝氧化锌AZO膜。
本发明提供的另一优选的一种透光性薄膜太阳电池制造方法,所述半导体层为单层半导体层、双层半导体层或三层半导体层,每层半导体均为p-i-n结构,所属半导体材料为硅材料或参杂的硅材料。
本发明提供的再一优选的一种透光性薄膜太阳电池制造方法,所述背电极层材料为铝材料。
本发明提供的又一优选的一种透光性薄膜太阳电池制造方法,所述透明导电膜TCO玻璃衬底上由掩模板A和掩模板B遮住部分的交集为透光单元。
本发明提供的又一优选的一种透光性薄膜太阳电池制造方法,所述电池芯板通过双玻璃和乙烯-醋酸乙烯共聚物EVA材料层压制封装成透光薄膜太阳电池组件。
本发明提供的又一优选的一种透光性薄膜太阳电池,所述太阳电池包括包装层和设置在包装层内部的电池芯板;所述电池芯板包括透明导电膜玻璃衬底和竖直方向上依次设置在所述透明导电膜玻璃衬底上的半导体层和背电极层。
本发明提供的又一优选的一种透光性薄膜太阳电池,所述包装层包括双玻璃和将双玻璃与所述电池芯板相连接的乙烯-醋酸乙烯共聚物EVA材料层。
和最接近的现有技术比,本发明提供技术方案具有以下优异效果
1、本发明中的方法可以直接制作大幅面的非晶硅半导体层和背电极膜层;
2、本发明中电池制作工序简单,但却比一般太阳电池的制作方法在产量上提高很多;
3、本发明中太阳电池降低了其子电池的正负极及各子电池间的短路现象;
4、本发明电池芯板上的半导体层和背电极层的分布图形统一;
5、本发明的太阳电池成本低廉。
附图说明
图1为本发明的太阳电池的结构示意图;
图2为本发明的掩膜板A示意图;
图3为本发明的掩膜板B示意图;
其中:1-TCO玻璃衬底,2-半导体层,3-背电极层,4-电池芯板,5-透光单元。
具体实施方式
下面结合实施例对发明作进一步的详细说明。
实施例1:
如图1-3所示,本例的发明透光性薄膜太阳电池制造方法包括:经1064nm的红外激光刻划后的所述透明导电膜TCO玻璃衬底1通过掩膜板A和等离子体增强化学气相沉积法(PECVD)积法所述半导体层2;所述半导体层2有选择的通过掩膜板A沉积在TCO膜上;在所述半导体层2上通过掩膜板B蒸镀或磁控溅射制备背电极层3形成电池芯板4;所述背电极层3通过掩膜板B有选择的沉积在半导体层2上。
所述红外激光将所述玻璃衬底1上的透明导电膜TCO分割为8-20mm间隔的单元,所述单元间的绝缘电阻为2M。
所述透明导电膜TCO为氧化铟锡ITO膜、氟掺杂氧化铟锡FTO膜或掺铝氧化锌AZO膜。
所述半导体层2为单层半导体层、双层半导体层或三层半导体层,每层半导体均为p-i-n结构,所属半导体层2材料为硅材料或参杂的硅材料。所述背电极层3材料为铝材料。
所述透光单元(5)是电池芯板上经掩膜A和经掩膜B工序后形成,透光单元5由掩模板A和掩模板B遮住部分的交集组成,可同步改变掩膜板A、掩模板B尺寸形成任意宽度的透光单元5。
所述电池芯板4通过双玻璃和乙烯-醋酸乙烯共聚物EVA材料层压制工艺封装成透光薄膜太阳电池组件。
所述太阳电池包括包装层和电池芯板4;所述电池芯板4包括透明导电膜玻璃衬底1和竖直方向上依次设置在所述透明导电膜玻璃衬底1上的半导体层2和背电极层3。所述包装层包括双玻璃和将双玻璃与所述电池芯板4相连接的乙烯-醋酸乙烯共聚物EVA材料层。
其中本实施例中,采用的掩膜板A:h1=h2=5mm,d1=14mm,d2=7mm,d3=20mm,d4=17mm,dx=3mm,掩膜板B:h1′=h2′=5mm,d1′=15mm,d2′=6mm,d3′=20mm,d4′=17mm,dx′=3mm。
本实施例中的透光性薄膜太阳电池的透光率为10%。
实施例2,本实施例中,采用的掩膜板A:h1=h2=5mm,d1=14mm,d2=7mm,d3=20mm,d4=16mm,dx=4mm,掩膜板B:h1′=h2′=5mm,d1′=15mm,d2′=6mm,d3′=20mm,d4′=16mm,dx′=4mm。
本实施例中的透光性薄膜太阳电池的透光率为15%。
最后应该说明的是:以上实施例仅用以说明本发明的技术方案而非对其限制,尽管参照上述实施例对本发明进行了详细说明,所属领域的普通技术人员应当理解:依然可以对本发明的具体实施方式进行修改或者等同替换,而未脱离本发明精神和范围的任何修改或者等同替换,其均应涵盖在本权利要求范围当中。
Claims (9)
1.一种透光性薄膜太阳电池制造方法,包括在带有透明导电膜TCO玻璃衬底上用等离子体增强化学气相沉积法沉积半导体层,在所述半导体层上通过蒸镀制备背电极形成电池芯板,其特征在于:经1064nm的红外激光刻划后的所述透明导电膜TCO玻璃衬底通过掩膜板A沉积所述半导体层;在所述半导体层上通过掩膜板B蒸镀或磁控溅射制备背电极层形成电池芯板。
2.如权利要求1所述的一种透光性薄膜太阳电池制造方法,其特征在于:所述红外激光将所述玻璃衬底上的透明导电膜TCO分割为8-20mm间隔的单元,所述单元间的绝缘电阻为2M。
3.如权利要求2所述的一种透光性薄膜太阳电池制造方法,其特征在于:所述透明导电膜TCO为氧化铟锡ITO膜、氟掺杂氧化铟锡FTO膜或掺铝氧化锌AZO膜。
4.如权利要求1所述的一种透光性薄膜太阳电池制造方法,其特征在于:所述半导体层为单层半导体层、双层半导体层或三层半导体层,每层半导体均为p-i-n结构,所属半导体材料为硅材料或参杂的硅材料。
5.如权利要求1所述的一种透光性薄膜太阳电池制造方法,其特征在于:所述背电极层材料为铝材料。
6.如权利要求1所述的一种透光性薄膜太阳电池制造方法,其特征在于:所述透明导电膜TCO玻璃衬底上由掩模板A和掩模板B遮住部分的交集为透光单元。
7.如权利要求1所述的一种透光性薄膜太阳电池制造方法,其特征在于:所述电池芯板通过双玻璃和乙烯-醋酸乙烯共聚物EVA材料层压制工艺封装成透光薄膜太阳电池组件。
8.如权利要求1所述方法制造的一种透光性薄膜太阳电池,其特征在于:所述太阳电池包括包装层和设置在包装层内部的电池芯板;所述电池芯板包括透明导电膜玻璃衬底和竖直方向上依次设置在所述透明导电膜玻璃衬底上的半导体层和背电极层。
9.如权利要求8所述的一种透光性薄膜太阳电池,其特征在于:所述包装层包括双玻璃和将双玻璃与所述电池芯板相连接的乙烯-醋酸乙烯共聚物EVA材料层。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105047739A (zh) * | 2015-06-24 | 2015-11-11 | 北京汉能光伏投资有限公司 | 一种具有封闭激光线的透光薄膜电池组件 |
CN105355679A (zh) * | 2015-12-03 | 2016-02-24 | 中国电子科技集团公司第十八研究所 | 太阳电池的制备方法 |
CN106684209A (zh) * | 2016-12-27 | 2017-05-17 | 成都中建材光电材料有限公司 | 一种新型碲化镉薄膜太阳能电池组件的制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101964368A (zh) * | 2009-07-21 | 2011-02-02 | 深圳市宇光高科新能源技术有限公司 | 一种叠层太阳能电池及其制造方法 |
US20110315190A1 (en) * | 2009-03-02 | 2011-12-29 | Kaneka Corporation | Thin film solar cell module |
CN202332901U (zh) * | 2011-11-24 | 2012-07-11 | 深圳市创益科技发展有限公司 | 软基柔性太阳能电池光伏组件 |
-
2013
- 2013-09-17 CN CN201310423412.1A patent/CN104465893A/zh active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110315190A1 (en) * | 2009-03-02 | 2011-12-29 | Kaneka Corporation | Thin film solar cell module |
CN101964368A (zh) * | 2009-07-21 | 2011-02-02 | 深圳市宇光高科新能源技术有限公司 | 一种叠层太阳能电池及其制造方法 |
CN202332901U (zh) * | 2011-11-24 | 2012-07-11 | 深圳市创益科技发展有限公司 | 软基柔性太阳能电池光伏组件 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105047739A (zh) * | 2015-06-24 | 2015-11-11 | 北京汉能光伏投资有限公司 | 一种具有封闭激光线的透光薄膜电池组件 |
CN105355679A (zh) * | 2015-12-03 | 2016-02-24 | 中国电子科技集团公司第十八研究所 | 太阳电池的制备方法 |
CN106684209A (zh) * | 2016-12-27 | 2017-05-17 | 成都中建材光电材料有限公司 | 一种新型碲化镉薄膜太阳能电池组件的制备方法 |
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