CN104465839A - Solar cell panel long in service life - Google Patents
Solar cell panel long in service life Download PDFInfo
- Publication number
- CN104465839A CN104465839A CN201410808772.8A CN201410808772A CN104465839A CN 104465839 A CN104465839 A CN 104465839A CN 201410808772 A CN201410808772 A CN 201410808772A CN 104465839 A CN104465839 A CN 104465839A
- Authority
- CN
- China
- Prior art keywords
- service life
- long service
- solar panel
- solar cell
- accounts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims abstract description 25
- 230000001681 protective effect Effects 0.000 claims abstract description 15
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 10
- 229920002620 polyvinyl fluoride Polymers 0.000 claims abstract description 8
- 239000002131 composite material Substances 0.000 claims abstract description 5
- 239000012528 membrane Substances 0.000 claims description 4
- 239000005341 toughened glass Substances 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 19
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229920002313 fluoropolymer Polymers 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 1
- 239000005041 Mylar™ Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a solar cell panel long in service life. The solar cell panel long in service life is formed by combining a photovoltaic material layer serving as an upmost layer, a protective film layer serving as a middle layer and a basic layer serving as a bottommost layer, wherein the photovoltaic material layer is made from gallium arsenide, the protective film layer is made from polyvinyl fluoride composite film, the photovoltaic material layer accounts for 32%-34% of the total weight of the solar cell panel long in service life, the protective film layer accounts for 24%-28% of the total weight of the solar cell panel long in service life, and the basic layer accounts for 39%-43% of the total weight of the solar cell panel long in service life. The solar cell panel long in service life has the advantages of being high in photoelectric conversion efficiency, low in cost and long in service life.
Description
Technical field
The present invention relates to a kind of solar panel of long service life.
Background technology
Current, crystalline silicon material (comprising polysilicon and monocrystalline silicon) is topmost photovoltaic material, and its occupation rate of market more than 90%, and is also still the mainstay material of solar cell in one quite long from now on period.The production technology of polycrystalline silicon material rests in 10 factory's hands of 7 companies of 3 countries such as U.S., day, moral for a long time, forms the situation of blockade on new techniques, corner on the market.The demand of polysilicon mainly comes from semiconductor and solar cell.Different by purity requirement, be divided into electron level and solar level.Wherein, about 55% is accounted for for electronic-grade polycrystalline silicon, solar-grade polysilicon accounts for 45%, along with the fast development of photovoltaic industry, solar cell is to the development of the growth rate of polysilicon demand higher than polycrystalline silicon semiconductor, and the demand expecting solar energy polycrystalline silicon in 2008 will exceed electronic-grade polycrystalline silicon.The total output of whole world solar cell in 1994 only has 69MW, and 2004 just close to 1200MW, in short 10 years, just increase 17 times.Scholarly forecast solar photovoltaic industry will exceed nuclear power in first half 21st century becomes one of most important basic energy resource.The useful life of solar panel by cell piece, toughened glass, EVA, the material of TPT etc. determines, the cell panel generally can worked it out with the producer of better material can reach 25 years useful life, but along with the impact of environment, the material of solar panel can be aging along with the change of time.Generally use 20 years power and can decay 30%, use 25 years power and can decay 70%.
Summary of the invention
The invention provides and a kind ofly have that photoelectric conversion efficiency is high, cost is low and the solar panel of the long service life of long service life advantage.
Technical scheme of the present invention is: a kind of solar panel of long service life, the solar panel of described long service life comprises the photovoltaic material layer of the superiors, protective film and the undermost basic unit in intermediate layer combine, described photovoltaic material layer is GaAs, described protective film is polyvinyl fluoride composite membrane, described photovoltaic material layer accounts for the 32%-34% of the overall component of solar panel of long service life, described protective film accounts for the 24%-28% of the overall component of solar panel of long service life, described basic unit accounts for the 39%-43% of the overall component of solar panel of long service life.
In a preferred embodiment of the present invention, described basic unit is toughened glass.
In a preferred embodiment of the present invention; described photovoltaic material layer accounts for 32% of the overall component of solar panel of long service life; described protective film accounts for 26% of the overall component of solar panel of long service life, and described basic unit accounts for 42% of the overall component of solar panel of long service life.
The solar panel of a kind of long service life of the present invention, has that photoelectric conversion efficiency is high, cost is low and long service life advantage.
Embodiment
Below preferred embodiment of the present invention is described in detail, can be easier to make advantages and features of the invention be readily appreciated by one skilled in the art, thus more explicit defining is made to protection scope of the present invention.
Wherein, the solar panel of described long service life comprises the photovoltaic material layer of the superiors, the protective film in intermediate layer and undermost basic unit and combines; described photovoltaic material layer is GaAs; described protective film is polyvinyl fluoride composite membrane; described photovoltaic material layer accounts for the 32%-34% of the overall component of solar panel of long service life; described protective film accounts for the 24%-28% of the overall component of solar panel of long service life, and described basic unit accounts for the 39%-43% of the overall component of solar panel of long service life.
Further illustrate; described basic unit is toughened glass; described photovoltaic material layer accounts for 32% of the overall component of solar panel of long service life; described protective film accounts for 26% of the overall component of solar panel of long service life, and described basic unit accounts for 42% of the overall component of solar panel of long service life.Photovoltaic material energy generation current is because photovoltaic effect, if namely light irradiate on the solar cell and light absorbed at boundary layer, electronics can excite by the photon with enough energy in P-type silicon and N-type silicon from covalent bond, so that produces electron-hole pair.Electric field action by space charge, before compound, is separated from each other by the electronics near boundary layer and hole.Electronics moves to the N district of positively charged and hole to electronegative P district.By the separation of charge of boundary layer, by testable voltage outside for generation one between P district and N district.Now can add top electrode on the both sides of silicon chip and access voltmeter.Concerning crystal silicon solar energy battery, the exemplary value of open circuit voltage is 0.5 ~ 0.6V.The electron-hole pair produced at boundary layer by illumination is more, and electric current is larger.Boundary layer absorb luminous energy more, boundary layer and cell area larger, the electric current formed in solar cells is also larger.A kind of important semi-conducting material of GaAs.Belong to Ⅲ-Ⅴ compound semiconductor.Belong to lattice of zinc blende type structure, lattice constant 5.65 × 10-10m, fusing point 1237 DEG C, energy gap 1.4 electronvolt.GaAs entered the practical stage in 1964.GaAs can make resistivity than the semi-insulating highly resistant materials more than high 3 orders of magnitude of silicon, germanium, is used for making IC substrate, Infrared Detectors, γ photon detector etc.Due to larger than silicon 5 ~ 6 times of its electron mobility, therefore obtain important application in making microwave device and high-speed digital circuit.With the semiconductor device that GaAs is made there is high frequency, high temperature, the advantage such as cryogenic property is good, noise is little, capability of resistance to radiation is strong.In addition, can also be used for making transferring device--bulk effect device.GaAs is in semi-conducting material, has the material of many-sided advantage concurrently, but little by the multiplication factor of the transistor of its making, and poor thermal conductivity is not suitable for making high power device.Although GaAs has superior performance, because it at high temperature decomposes, therefore high-purity monocrystal material of desirable chemical proportioning to be produced, technically require higher.
Further illustrating; polyvinyl fluoride composite membrane at least should have three-decker: outer protective layer PVF has good environment resistant erosiveness; intermediate layer is that mylar has good insulation property, and internal layer PVF need have good adhesive property through surface treatment and EVA.Encapsulation Tedlar must keep clean, must not stain or make moist, and particularly the not handy finger of internal layer directly contacts, in order to avoid affect the adhesive strength of EVA.Back side covering-fluoroplastics the film of solar cell is white, plays reflex, therefore slightly improves the efficiency of assembly, and have higher infrared emittance because of it, also can reduce the working temperature of assembly to sunlight, is also conducive to the efficiency improving assembly.Certainly, first this fluoroplastics film has the basic demand such as ageing-resistant, corrosion-resistant, airtight required by solar cell encapsulating material.The invention provides a kind of solar panel of long service life, have that photoelectric conversion efficiency is high, cost is low and long service life advantage.
The specific embodiment of the present invention; but protection scope of the present invention is not limited thereto; any those of ordinary skill in the art are in the technical scope disclosed by the present invention, and the change can expected without creative work or replacement, all should be encompassed within protection scope of the present invention.Therefore, the protection range that protection scope of the present invention should limit with claims is as the criterion.
Claims (3)
1. the solar panel of a long service life, it is characterized in that: the solar panel of described long service life comprises the photovoltaic material layer of the superiors, protective film and the undermost basic unit in intermediate layer combine, described photovoltaic material layer is GaAs, described protective film is polyvinyl fluoride composite membrane, described photovoltaic material layer accounts for the 32%-34% of the overall component of solar panel of long service life, described protective film accounts for the 24%-28% of the overall component of solar panel of long service life, described basic unit accounts for the 39%-43% of the overall component of solar panel of long service life.
2. the solar panel of long service life according to claim 1, is characterized in that: described basic unit is toughened glass.
3. the solar panel of long service life according to claim 1; it is characterized in that: described photovoltaic material layer accounts for 32% of the overall component of solar panel of long service life; described protective film accounts for 26% of the overall component of solar panel of long service life, and described basic unit accounts for 42% of the overall component of solar panel of long service life.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410808772.8A CN104465839A (en) | 2014-12-23 | 2014-12-23 | Solar cell panel long in service life |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410808772.8A CN104465839A (en) | 2014-12-23 | 2014-12-23 | Solar cell panel long in service life |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104465839A true CN104465839A (en) | 2015-03-25 |
Family
ID=52911576
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410808772.8A Pending CN104465839A (en) | 2014-12-23 | 2014-12-23 | Solar cell panel long in service life |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104465839A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201349011Y (en) * | 2008-12-23 | 2009-11-18 | 中电电气（南京）太阳能研究院有限公司 | Flexible solar battery component |
| CN101615641A (en) * | 2008-06-27 | 2009-12-30 | 福建钧石能源有限公司 | Thinfilm solar cell assembly and method for packing thereof |
| CN102655177A (en) * | 2011-03-02 | 2012-09-05 | 亿芳能源科技股份有限公司 | III-V solar battery packaging part and manufacturing method thereof |
| KR101327092B1 (en) * | 2011-12-27 | 2013-11-07 | 엘지이노텍 주식회사 | Structure of building applied photovoltaic |
-
2014
- 2014-12-23 CN CN201410808772.8A patent/CN104465839A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101615641A (en) * | 2008-06-27 | 2009-12-30 | 福建钧石能源有限公司 | Thinfilm solar cell assembly and method for packing thereof |
| CN201349011Y (en) * | 2008-12-23 | 2009-11-18 | 中电电气（南京）太阳能研究院有限公司 | Flexible solar battery component |
| CN102655177A (en) * | 2011-03-02 | 2012-09-05 | 亿芳能源科技股份有限公司 | III-V solar battery packaging part and manufacturing method thereof |
| KR101327092B1 (en) * | 2011-12-27 | 2013-11-07 | 엘지이노텍 주식회사 | Structure of building applied photovoltaic |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2017206394A1 (en) | Light-weight photovoltaic module | |
| KR101652607B1 (en) | Thin film solar module having series connection and method for the series connection of thin film solar cells | |
| JPH0527278B2 (en) | ||
| EP3462505A1 (en) | Photovoltaic assembly | |
| KR20120051971A (en) | Solar cell module | |
| TW201110379A (en) | Tandem solar cell integrated in a double insulating glass window for building integrated photovoltaic applications | |
| JP3239104U (en) | A tandem type CVD diamond organic semiconductor thin film solar cell device installed in a gardening house. | |
| JP3236533U (en) | A tandem diamond thin-film solar cell device that also uses wind power generation. | |
| CN205355088U (en) | Based on organic thin film solar cell panel solar power system | |
| JP2016025119A (en) | Solar battery module and manufacturing method for solar battery module | |
| CN104465839A (en) | Solar cell panel long in service life | |
| JP3184620U (en) | Solar cell module | |
| CN208225885U (en) | Separated type solar battery and solar array battery | |
| Saeed et al. | Design and simulation of ETL-free Perovskite/Si tandem cell with 33% efficiency | |
| KR20110076123A (en) | Manufacturing method of the solar module using the textured glass | |
| CN206878015U (en) | A kind of photovoltaic module | |
| CN206878014U (en) | A kind of double-sided glass BIPV photovoltaic modulies | |
| KR101127054B1 (en) | Thin film solar cell | |
| CN204857750U (en) | Novel solar cell panel | |
| KR20120100110A (en) | Solar cell module | |
| JP3241710U (en) | A tandem-type thin-film solar cell device with a three-junction structure. | |
| CN218734188U (en) | Photovoltaic module | |
| RU2686449C1 (en) | Planar high-voltage photoelectric module | |
| CN219352270U (en) | Solar laminated battery, battery assembly and photovoltaic system | |
| CN103594543B (en) | A kind of photovoltaic cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20150325 |