CN104465722A - High-voltage isolating ring structure - Google Patents
High-voltage isolating ring structure Download PDFInfo
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- CN104465722A CN104465722A CN201410748615.2A CN201410748615A CN104465722A CN 104465722 A CN104465722 A CN 104465722A CN 201410748615 A CN201410748615 A CN 201410748615A CN 104465722 A CN104465722 A CN 104465722A
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- 230000005669 field effect Effects 0.000 claims abstract description 48
- 230000007704 transition Effects 0.000 claims abstract description 8
- 230000003071 parasitic effect Effects 0.000 claims abstract description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 14
- 229920005591 polysilicon Polymers 0.000 claims description 14
- 230000003647 oxidation Effects 0.000 claims description 11
- 238000007254 oxidation reaction Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000005452 bending Methods 0.000 claims description 2
- 230000005611 electricity Effects 0.000 abstract 1
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- IXSZQYVWNJNRAL-UHFFFAOYSA-N etoxazole Chemical compound CCOC1=CC(C(C)(C)C)=CC=C1C1N=C(C=2C(=CC=CC=2F)F)OC1 IXSZQYVWNJNRAL-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
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- H01L29/10—
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- H01L29/78—
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- H01L2229/00—
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- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
The invention discloses a high-voltage isolating ring structure. The high-voltage isolating ring structure comprises a high-voltage-withstanding field effect transistor for level shift and a high-voltage isolating ring. The high-voltage isolating ring is of a closed closed-loop structure, and a high-side voltage region located in the ring and a low-side voltage region located outside the ring are formed. No voltage transition area exists in the high-voltage isolating ring. The high-voltage field effect transistor is located on the outer side of the closed-loop structure, and sections of isolating rings surround the portion between the high-voltage field effect transistor and the isolating ring at equal intervals. No complex high-voltage transition area is needed for the high-voltage isolating ring structure, the high-voltage isolating ring structure is a single annular voltage-withstanding structure, a parasitic JFET structure is introduced in the high-voltage-withstanding field effect transistor, the drain end of the high-voltage-withstanding field effect transistor has a certain self-pinch-off function so that self-protection can be achieved, and the problem that electricity of the isolating ring leaks due to the logic signal time sequence is solved.
Description
Technical field
The present invention relates to IC manufacturing field, refer to a kind of high-voltage isolating ring structure of high pressure self-shield especially.
Background technology
In high voltage integrated circuit design, in the compatible half-bridge drive circuit application on same chip circuit simultaneously of the high-end potential circuit of a kind of needs (high side) and lower terminal voltage circuit (lowside), as shown in Figure 1, be the circuit simplified schematic diagram of a kind of high voltage integrated circuit HVIC, there is in circuit high-end voltage segment High-side gate driver and lower terminal voltage part Low-side gate driver.For high-end potential circuit part, have certain voltage to earth and to float demand (Floating Voltage), particularly in the application of 220V half-bridge driven, voltage floats and requires higher than 600V.The type circuit controls to realize current potential translation functions (level shift) to the grid of high-pressure MOS end (in figure M1 and M2) mainly through logic drive circuit.
High terminal voltage shading ring (High side ring) realizes the withstand voltage demand of whole High-side circuit more than 600V over the ground.Referenced in schematic 2, this type of high-voltage isolating ring structure mainly has following characteristics:
1. high-voltage isolating ring structure is made up of three kinds of pressure-resistance structures: high withstand voltage field effect transistor 1 is as voltage shifts levelshift (LS MOS), high withstand voltage shading ring (HVIR) 3 and high pressure transitional region 2 between the two, be connected to form closed-loop structure, closed loop inside is high-end voltage regime 5, is lower terminal voltage region 4 outside closed loop.
2. high withstand voltage field effect transistor 1 is controlled to open and turn off, to realize low side to high-end voltage shifts effect by IC internal circuit logic control signal.
3. high withstand voltage shading ring is around whole high-end potential circuit part, and what realize low side is withstand voltage.
4. high withstand voltage field effect transistor 1 and the withstand voltage shading ring of height (HVIR) 3 transitional region 2 between the two, realizes by the withstand voltage transition of the withstand voltage field effect transistor of height to high withstand voltage shading ring structure.
Fig. 3 is the AA place profile of the existing high-end voltage regime pressure ring shown in Fig. 2, source electrode 108 and the grid 107 of figure middle and high end is withstand voltage field-effect transistor are positioned at lower terminal voltage region 4, drain electrode 106 is positioned at high-end voltage regime 5, and drain electrode 106 and the withstand voltage drift region between drain electrode 106 and grid 107 are that withstand voltage shading ring 3 shares with height.Shown in Fig. 4 is the BB place profile of existing high-end voltage regime pressure ring, and the difference of itself and Fig. 3 is, its grid 107, source electrode 108 are short circuits together with earth potential 109.
Above-mentioned high terminal voltage shading ring structure needs to arrange baroque transitional region 2, and does not have the function of high pressure self-protection as the withstand voltage field effect transistor 1 of height of voltage shifts.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of high-voltage isolating ring structure, and its structure is simple and have self-protection function.
For solving the problem, high-voltage isolating ring structure of the present invention, comprise the withstand voltage field-effect transistor of height for level shift and high-voltage isolating ring, described high-voltage isolating ring is closed-loop structure, and is formed with bending radian district; Be positioned at closed loop for high-end voltage regime, being positioned at outside closed loop is lower terminal voltage region; It is characterized in that: described high-voltage isolating ring is the single closed-loop structure without high pressure transition region;
Described high voltage field effect transistor is positioned at the radian district of the shading ring of closed-loop structure, shares drain region with high-voltage isolating ring.
Further, described high voltage field effect transistor has self-protection function, and its polysilicon gate does not cover the local oxidation district above withstand voltage drift region; There is in epitaxial loayer between grid and field oxide region P trap, P Jing Zhongyou heavily doped P-type district and heavily doped N-type district, polysilicon gate silicon face between P trap and local oxidation district having gate oxide and cover on gate oxide, local oxidation district, described polysilicon gate cover part, described heavily doped P-type district, heavily doped N-type district and polysilicon gate are shorted to earth potential after drawing.
Further, the source electrode of described high voltage field effect transistor and grid are positioned over lower terminal voltage region, outside the source electrode being positioned at high-voltage isolating ring, with high-voltage isolating ring common drain and withstand voltage drift region.
Further, the N-type extension bottom the P trap of the source electrode of high voltage field effect transistor, P trap and P type substrate form parasitic JFET structure, and the drain potential of high voltage field effect transistor is had from pinch off function.
Further, described high-voltage isolating ring adopts the normal off state structure of high withstand voltage MOS, only withstand voltage as circuit.
Further, the grid of described high-voltage isolating ring is connected with source electrode, and short circuit direct with ground end, make MOS be in off state always.
Further, described high voltage field effect transistor and the withstand voltage of high-voltage isolating ring realize by same withstand voltage drift region.
High-voltage isolating ring structure of the present invention; because the withstand voltage drift region by same structure height pressure pipe of high voltage field effect transistor and high-voltage isolating ring realizes floating voltage demand; thus without the need to the of the prior art withstand voltage transition region of additional designs complexity; use single annular pressure-resistance structure; introduce the high voltage field effect transistor with self-protection function simultaneously, solve the shading ring electrical leakage problems because logical signal sequential causes.
Accompanying drawing explanation
Fig. 1 is the simplified schematic diagram of a certain high voltage integrated circuit structure.
Fig. 2 is existing high-voltage isolating ring structure schematic diagram.
Fig. 3 is the AA place profile shown in Fig. 2.
Fig. 4 is the BB place profile shown in Fig. 2.
Fig. 5 is high-voltage isolating ring structure schematic diagram of the present invention.
Fig. 6 is high-voltage isolating ring structure AA ＂ place of the present invention profile.
Fig. 7 is high-voltage isolating ring structure BB ＂ place of the present invention profile.
Description of reference numerals
1 is high withstand voltage field-effect transistor, and 2 is high pressure transition regions, and 3 is high withstand voltage shading rings, and 4 is lower terminal voltage regions, 5 is high-end voltage regime, and 101 is substrates, and 102 is extensions, 103 is P traps, and 104 is P traps, and 105 is p type buried layers, 106 is drain electrodes, and 107 is grids, and 108 is source electrodes, 109 be hold, 110 is local oxidation, and 111 is drain region field plates, 112 is metals, and 113 is grids, and 114 is source electrodes.
Embodiment
High-voltage isolating ring structure of the present invention, as shown in Figure 5, comprise the withstand voltage field-effect transistor of height (SPLS:Self – Protect Level Shift MOSFET) for level shift and high-voltage isolating ring two parts, described high-voltage isolating ring is closed closed-loop structure, forms the high-end voltage regime being positioned at ring and the lower terminal voltage region be positioned at outside ring; Described high-voltage isolating ring does not arrange traditional high pressure transition region, is single loop configuration.
Described high voltage field effect transistor as shown in Figure 6, is the profile at the AA ＂ place shown in Fig. 5, that is high withstand voltage field effect transistor area under control.The polysilicon gate 113 of high withstand voltage field-effect transistor does not cover the local oxidation district 110 above withstand voltage drift region, and polysilicon gate 113 has the source electrode 114 of high withstand voltage field-effect transistor away from the side of drain electrode 106; There is in epitaxial loayer between grid 113 and field oxide region 110 P trap 103, P trap 103 Zhong You heavily doped P-type district and heavily doped N-type district, polysilicon gate silicon face between P trap and local oxidation district having gate oxide and cover on gate oxide, local oxidation district, described polysilicon gate cover part, described heavily doped P-type district, heavily doped N-type district and polysilicon gate are shorted to earth potential metal 112 after drawing.
Described high-voltage isolating ring has the radian district of two sections of lateral bends outward, described high voltage field effect transistor is positioned at the radian district of closed-loop structure, itself and high-voltage isolating ring common drain 106 and withstand voltage drift region, source region and grid are placed in lower terminal voltage region, there is same crooked radian, outside the source electrode being positioned at high-voltage isolating ring.
In conjunction with the structure that high-voltage isolating ring is described with reference to figure 5, Fig. 6 and Fig. 7, closed-loop structure shown in Fig. 5 presents inside and outside two-layer structure, for BB " sectional view 7 at place; its internal layer shading ring corresponds to the public drain electrode 106 shown in Fig. 7, and outer shading ring corresponds to the metal 112 of grid in Fig. 7 and source shorted.For AA " the sectional view Fig. 6 at place; internal layer shading ring and BB in Fig. 5 " place is identical, corresponding to the drain electrode 106 in Fig. 6, outer shading ring corresponds to outermost layer in the short-contact metal 112, Fig. 5 in Fig. 6 and leans on grid 113, source electrode 114 and the ground loop 109 that the non-close arc in lower terminal voltage region is high voltage field effect transistor described in Fig. 6.
Metal 112 is by the source electrode of high-voltage isolating ring and polysilicon gate together short circuit and be connected to ground, makes MOS be in off state always, only withstand voltage as circuit.Metal 112 in Fig. 7 is and grounded metal 109 short circuit, but the BB not shown in Fig. 7 " section short circuit.Described high voltage field effect transistor and the withstand voltage of high-voltage isolating ring realize by same withstand voltage drift region.
N-type extension bottom the P trap of the source electrode of high voltage field effect transistor, P trap and P type substrate form parasitic JFET structure, and the drain potential of high voltage field effect transistor is had from pinch off function.Parasitic JFET structure in high voltage field effect transistor SPLS structure adopts the P trap of 0.5 ~ 15 μm, and the lightly doped n-type epi region of 2 ~ 25 μm and P type substrate are formed.In the side circuit application of high voltage field effect transistor SPLS, the grid of high voltage field effect transistor SPLS carrys out drived control by the logical circuit signal outside high terminal voltage shading ring, and the drain electrode of high voltage field effect transistor SPLS is in high terminal voltage shading ring.When high voltage field effect transistor SPLS is in off state, drain electrode will be placed in high potential state thereupon.When high voltage field effect transistor SPLS is in opening, drain potential is needed to decrease as low-potential state.And due to the difference of injection time of low side and high terminal potential, when high voltage field effect transistor SPLS is in opening, drain electrode is still in high potential state, and such high voltage field effect transistor SPLS will exist the high withstand voltage demand of ON state.Parasitic JFET structure is introduced in high voltage field effect transistor SPLS structure; make under ON state state; drain potential is stabilized in certain voltage range, and this structure solves the ON state breakdown problem of high voltage field effect transistor SPLS, therefore achieves self-protection function.
These are only the preferred embodiments of the present invention, be not intended to limit the present invention.For a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1. a high-voltage isolating ring structure, comprise the withstand voltage field-effect transistor of height for level shift and high-voltage isolating ring, described high-voltage isolating ring is closed-loop structure, and is formed with bending radian district; Be positioned at closed loop for high-end voltage regime, being positioned at outside closed loop is lower terminal voltage region; It is characterized in that: described high-voltage isolating ring is the single closed-loop structure without high pressure transition region;
Described high voltage field effect transistor is positioned at the radian district of closed-loop structure, and itself and described high-voltage isolating ring share drain region, and its source electrode and grid are positioned at the outside of high-voltage isolating ring.
2. high-voltage isolating ring structure as claimed in claim 1, it is characterized in that: described high voltage field effect transistor has self-protection function, its polysilicon gate does not cover the local oxidation district above withstand voltage drift region; There is in epitaxial loayer between grid and local oxidation district P trap, P Jing Zhongyou heavily doped P-type district and heavily doped N-type district, polysilicon gate silicon face between P trap and local oxidation district having gate oxide and cover on gate oxide, local oxidation district, described polysilicon gate cover part, described heavily doped P-type district, heavily doped N-type district and polysilicon gate are shorted to earth potential after drawing together.
3. high-voltage isolating ring structure as claimed in claim 2, is characterized in that: the source electrode of described high voltage field effect transistor and grid are positioned over lower terminal voltage region, outside the source electrode being positioned at high-voltage isolating ring; With high-voltage isolating ring common drain and withstand voltage drift region.
4. high-voltage isolating ring structure as claimed in claim 2, it is characterized in that: the N-type extension bottom the P trap of the source electrode of high voltage field effect transistor, P trap and P type substrate form parasitic JFET structure, and the drain potential of high voltage field effect transistor is had from pinch off function.
5. high-voltage isolating ring structure as claimed in claim 1, is characterized in that: described high-voltage isolating ring adopts the normal off state structure of high withstand voltage MOS, only withstand voltage as circuit.
6. high-voltage isolating ring structure as claimed in claim 5, is characterized in that: the grid of described high-voltage isolating ring is connected with source electrode, and short circuit direct with ground end, make MOS be in off state always.
7. high-voltage isolating ring structure as claimed in claim 1, is characterized in that: described high voltage field effect transistor and the withstand voltage of high-voltage isolating ring realize by same withstand voltage drift region.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410748615.2A CN104465722B (en) | 2014-12-09 | 2014-12-09 | High-voltage isolating ring structure |
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| CN201410748615.2A CN104465722B (en) | 2014-12-09 | 2014-12-09 | High-voltage isolating ring structure |
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| CN104465722B CN104465722B (en) | 2017-06-06 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105261615A (en) * | 2015-09-02 | 2016-01-20 | 电子科技大学 | Silicon-based thin epitaxial single RESURF level shift structure |
| CN109817718A (en) * | 2019-01-08 | 2019-05-28 | 上海华虹宏力半导体制造有限公司 | The high-voltage isolating ring device of gate drive circuit |
| CN110190055A (en) * | 2019-04-09 | 2019-08-30 | 上海华虹宏力半导体制造有限公司 | A kind of self-shield of high-voltage structure of grid driving technique |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5040045A (en) * | 1990-05-17 | 1991-08-13 | U.S. Philips Corporation | High voltage MOS transistor having shielded crossover path for a high voltage connection bus |
| EP1699084B1 (en) * | 1995-04-12 | 2011-05-25 | Fuji Electric Systems Co., Ltd. | High voltage integrated circuit, high voltage junction terminating structure, and high voltage MIS transistor |
| JP4863665B2 (en) * | 2005-07-15 | 2012-01-25 | 三菱電機株式会社 | Semiconductor device and manufacturing method thereof |
| CN103094317B (en) * | 2011-11-01 | 2015-10-14 | 上海华虹宏力半导体制造有限公司 | The domain structure of the high withstand voltage field effect transistor of isolated form |
| JP5733416B2 (en) * | 2011-11-14 | 2015-06-10 | 富士電機株式会社 | High voltage semiconductor device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105261615A (en) * | 2015-09-02 | 2016-01-20 | 电子科技大学 | Silicon-based thin epitaxial single RESURF level shift structure |
| CN109817718A (en) * | 2019-01-08 | 2019-05-28 | 上海华虹宏力半导体制造有限公司 | The high-voltage isolating ring device of gate drive circuit |
| CN110190055A (en) * | 2019-04-09 | 2019-08-30 | 上海华虹宏力半导体制造有限公司 | A kind of self-shield of high-voltage structure of grid driving technique |
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| CN104465722B (en) | 2017-06-06 |
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