CN104465434A - Defect analysis method - Google Patents
Defect analysis method Download PDFInfo
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- CN104465434A CN104465434A CN201310444792.7A CN201310444792A CN104465434A CN 104465434 A CN104465434 A CN 104465434A CN 201310444792 A CN201310444792 A CN 201310444792A CN 104465434 A CN104465434 A CN 104465434A
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- layer film
- defect
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- wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
Abstract
The invention provides a defect analysis method. A defect analysis system is used for analyzing defects, and the number of the defects which can damage the yield of wafers to be tested can be obtained. Meanwhile, coordinate superposition is conducted on a defect of a current film layer and a defect of a last film layer, so that the number of the defects which can damage the yield of the wafers to be tested can be obtained more accurately, the calculated yield kill rate is more accurate, sensitivity to monitoring on the defects can be improved, and whether the wafers are scrapped can be more accurately judged.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly relate to a kind of defect analysis method.
Background technology
Along with semiconductor technology characteristic size is more and more less, require also more and more stricter to semiconductor technology.In wafer (wafer) manufacture process, equipment or technique occur surprisingly all causing crystal column surface generation defect (defect), and because defect can cause the yield of wafer to reduce, serious meeting causes wafer directly to be scrapped.Defect analysis method of the prior art is formed in thin layer process at wafer usually, the surface of photosignal to thin layer is adopted to scan, collect the photosignal of different test point feedback simultaneously, compare the difference of adjacent area signal afterwards, if difference value exceedes preset standard (Spec), be then denoted as defect.During actual production, all defect statistics can be got up, be used for calculating yield lethality (Yield Kill Rate), and judge whether to scrap wafer.
But crystal column surface can be divided into multiple region, service area and virtual area (Dummy Area) can be divided into according to function; The region of described service area mainly realizing circuit function, such as device region, metal contact wires etc.; Described virtual area mainly in order to process requirements is formed in wafer, but does not participate in the region of circuit function, and described virtual area generally in order to balance the closeness of different crystal column surface, is conducive to the realization of CMP process.Because defect can occur in the region Anywhere of crystal column surface at random, therefore, defect is understood some and is fallen into service area, and another part falls into virtual area.Such as, but the defect of zones of different is also diverse for the impact of the yield of product, is formed in the defect in virtual area very little on the impact of yield.But, as described above, in reality detects, normally whole according to wafer defects is carried out statistics kill rate and is judged whether to scrap, therefore, the yield lethality calculated in prior art is very accurate, judges whether wafer is scrapped and also just be there is certain error with this.
And, the analytical method of prior art defect also cannot judge when the defect of layer film fall within virtual area on after the circuit of layer or line whether have impact.
Summary of the invention
The object of the present invention is to provide a kind of defect analysis method, the sensitiveness to defect monitoring can be increased, draw the yield lethality of defect to wafer accurately, be convenient to judge whether wafer is scrapped more accurately.
To achieve these goals, the present invention proposes a kind of defect analysis method, comprise step:
(1) defects detection is carried out to wafer n-th layer film to be measured, obtain defects count and the coordinate of n-th layer film;
(2) judge whether the defect of n-th layer film exceeds preassigned; If exceed preassigned, then enter step (3), if do not exceed preassigned, then enter step (5);
(3) familiar lacunas analytical system is to the defect analysis of n-th layer film, show that n-th layer film defects kills and wounds the quantity of wafer yield to be measured;
(4) judge whether the quantity of killing and wounding the defect of wafer yield to be measured exceeds preassigned; If exceed preassigned, then scrap wafer to be measured, if do not exceed preassigned, then enter step (5);
(5) defect of n-th layer film is carried out coordinate with the defect of N-1 layer film to superpose, draw the quantity of the defect of killing and wounding wafer yield to be measured in n-th layer film and N-1 layer film;
(6) judge whether the quantity of killing and wounding the defect of wafer to be measured in n-th layer film and N-1 layer film exceeds preassigned; If exceed preassigned, then scrap wafer to be measured, if do not exceed preassigned, then carry out follow-up production;
Wherein, described N be greater than 0 natural number.
Further, described defects analysis system comprises:
Described crystal column surface to be measured is divided into service area and virtual area;
Calculate in n-th layer film and fall into the quantity that the defect of wafer yield to be measured is killed and wounded in described service area.
Further, the part be all connected with N-1 layer film and M layer film circuit in n-th layer film is defined as service area, wherein M is the natural number being greater than N.
Further, by all can the part of realizing circuit function with N-1 layer film electric isolution in n-th layer film, and all can the part of realizing circuit function with M layer film electric isolution in n-th layer film, be all defined as service area.
Further, all the part of the closeness improving described crystal column surface to be measured is used for N-1 layer film electric isolution by n-th layer film, and M layer film electric isolution is for improving the part of the closeness of described crystal column surface to be measured, is all defined as described virtual area.
Further, after the defect of n-th layer film and the defect of N-1 layer film being carried out coordinate and superposing, again the defect of n-th layer film is carried out coordinate with the service area of M layer film to superpose, show that the quantity of the defect of wafer yield to be measured can be killed and wounded in service area that the defect of n-th layer film falls into M layer film.
Further, judge whether the quantity that the defect of wafer yield to be measured can be killed and wounded in service area that the defect of n-th layer film falls into M layer film exceeds preassigned, if exceed preassigned, then scraps wafer to be measured, if do not exceed preassigned, then carry out follow-up production.
Compared with prior art, beneficial effect of the present invention is mainly reflected in: familiar lacunas analytical system is to defect analysis, draw the quantity can killing and wounding wafer yield to be measured, simultaneously, the defect of current layer film is carried out coordinate with the defect of front thin film superpose, can draw the quantity of the defect of killing and wounding wafer yield to be measured more accurately, the yield kill rate calculated with this is more accurate, the sensitiveness to defect monitoring can be increased, be convenient to judge whether wafer is scrapped more accurately.
Accompanying drawing explanation
Fig. 1 is the flow chart of defect analysis method in one embodiment of the invention.
Embodiment
Below in conjunction with schematic diagram, defect analysis method of the present invention is described in more detail, which show the preferred embodiments of the present invention, should be appreciated that those skilled in the art can revise the present invention described here, and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as limitation of the present invention.
In order to clear, whole features of practical embodiments are not described.They in the following description, are not described in detail known function and structure, because can make the present invention chaotic due to unnecessary details.Will be understood that in the exploitation of any practical embodiments, a large amount of implementation detail must be made to realize the specific objective of developer,
In the following passage, more specifically the present invention is described by way of example with reference to accompanying drawing.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, the aid illustration embodiment of the present invention lucidly.
Please refer to Fig. 1, in the present embodiment, propose a kind of defect analysis method, comprise step:
(1) defects detection is carried out to wafer n-th layer film to be measured, obtain defects count and the coordinate of n-th layer film;
In step (1), the method that the photosignal simultaneously collecting different test point feedback is scanned on the employing surface of photosignal to thin layer detects defect, and obtains quantity and the coordinate of defect.
(2) judge whether the defect of n-th layer film exceeds preassigned; If exceed preassigned, then enter step (3), if do not exceed preassigned, then enter step (5);
In step (2), preassigned can be selected according to concrete technique, does not limit at this.
(3) familiar lacunas analytical system is to the defect analysis of n-th layer film, show that n-th layer film defects kills and wounds the quantity of wafer yield to be measured;
In step (3), described defects analysis system comprises:
Described crystal column surface to be measured is divided into service area and virtual area;
Wherein, the part be all connected with N-1 layer film and M layer film circuit in n-th layer film can be defined as service area, can also by all can the part of realizing circuit function with N-1 layer film electric isolution in n-th layer film, and all can the part of realizing circuit function with M layer film electric isolution in n-th layer film, be all defined as service area; All the part of the closeness improving described crystal column surface to be measured is used for N-1 layer film electric isolution by n-th layer film, and M layer film electric isolution is for improving the part of the closeness of described crystal column surface to be measured, all be defined as described virtual area, described virtual area can not realizing circuit function.
Calculate in n-th layer film and fall into the quantity that the defect of wafer yield to be measured is killed and wounded in described service area.
Described service area mainly can realizing circuit function, when defect falls in described service area, also just maximum on the yield impact of wafer to be measured, therefore being how many to calculate defect more accurately to the kill rate of the yield of wafer to be measured, just first should showing that defect falls into the quantity in described service area accurately.
(4) judge whether the quantity of killing and wounding the defect of wafer yield to be measured exceeds preassigned; If exceed preassigned, then scrap wafer to be measured, if do not exceed preassigned, then enter step (5);
(5) defect of n-th layer film is carried out coordinate with the defect of N-1 layer film to superpose, draw the quantity of the defect of killing and wounding wafer yield to be measured in n-th layer film and N-1 layer film;
In step (5), if the defect of N-1 layer film fall into the virtual area of N-1 layer, calculating N-1 layer kill and wound wafer yield to be measured time can not be counted, if but above-mentioned defect but fall in the service area of n-th layer film, at this moment just should count by after the superposing of n-th layer film and N-1 layer film.
Preferably, after the defect of n-th layer film and the defect of N-1 layer film being carried out coordinate and superposing, again the defect of n-th layer film is carried out coordinate with the service area of M layer film to superpose, show that the quantity of the defect of wafer yield to be measured can be killed and wounded in service area that the defect of n-th layer film falls into M layer film, same, service area is fall at M layer in order to prevent the defect falling into virtual area in n-th layer film, therefore, need that coordinate is carried out in the service area of the defect and M layer film that fall into virtual area in n-th layer film to superpose, if the defect falling into virtual area in n-th layer film fall into the service area of M layer film, then should be calculated in the defect of killing and wounding wafer yield to be measured.
Then, judge whether the quantity that the defect of wafer yield to be measured can be killed and wounded in service area that the defect of n-th layer film falls into M layer film exceeds preassigned, if exceed preassigned, then scraps wafer to be measured, if do not exceed preassigned, then carries out follow-up production.
(6) judge whether the quantity of killing and wounding the defect of wafer to be measured in n-th layer film and N-1 layer film exceeds preassigned; If exceed preassigned, then scrap wafer to be measured, if do not exceed preassigned, then carry out follow-up production.
Wherein, described N, M are the natural number being greater than 0, such as, be 1,2,3 etc., and M is greater than N.
Concrete, such as, when carrying out defects detection to wafer to be measured 3rd layer film, first judge whether the defect detected exceeds preassigned, such as preassigned is 5%, if the ratio of defects detected is 4%, then without the need to carrying out extra analysis, directly wafer to be measured is entered subsequent production;
If the ratio of defects detected is 6%, then familiar lacunas analytical system is to the defect analysis of the 3rd layer film, if what defect fell into the 3rd layer film service area is 4%, residue 2% falls into virtual area, then illustrate that the ratio of defects of the 3rd layer film does not reach Rejection standard, then, the defect of the 3rd layer film is carried out coordinate with the defect of the 2nd layer film superpose, if the defect of the 2nd layer film is 3%, but there is the service area that 2% falls into the 3rd layer film, therefore the ratio of defects that the 2nd layer film and the 3rd layer film can kill and wound wafer yield to be measured should be 4% and adds that 2% is 6% be greater than 5%, now superposing with the service area of the 4th layer film, if after superposition, the defect of 4% is only had to fall in the service area of the 4th layer film, then should look the ratio of defects of the 3rd layer film less than Rejection standard, if after superposition, the defect of 6% all falls in the service area of the 4th layer film, then should scrap wafer to be measured, if the defect of the 2nd layer film does not fall into the service area of the 3rd layer film, then should wafer to be measured be entered in subsequent production,
If the ratio of defects of the 3rd layer film is 6%, and all fall into service area, again the defect of the 3rd layer film is carried out coordinate with the service area of the 4th layer film (formation) to superpose, because the service area of the 4th layer film is planned by semiconductor layout all, although described 4th layer film is not formed, but also can obtain the coordinate of the 4th layer film service area, if after superposition, the defect of 4% is only had to fall in the service area of the 4th layer film, then should look the ratio of defects of the 3rd layer film less than Rejection standard, if after superposition, the defect of 6% all falls in the service area of the 4th layer film, then should scrap wafer to be measured.
To sum up, in the defect analysis method that the embodiment of the present invention provides, familiar lacunas analytical system is to defect analysis, draw the quantity can killing and wounding wafer yield to be measured, meanwhile, the defect of current layer film is carried out coordinate with the defect of front thin film and superposes, the quantity of the defect of killing and wounding wafer yield to be measured can be drawn more accurately, the yield kill rate calculated with this is more accurate, can increase the sensitiveness to defect monitoring, be convenient to judge whether wafer is scrapped more accurately.
Above are only the preferred embodiments of the present invention, any restriction is not played to the present invention.Any person of ordinary skill in the field; in the scope not departing from technical scheme of the present invention; the technical scheme disclose the present invention and technology contents make the variations such as any type of equivalent replacement or amendment; all belong to the content not departing from technical scheme of the present invention, still belong within protection scope of the present invention.
Claims (7)
1. a defect analysis method, comprises step:
(1) defects detection is carried out to wafer n-th layer film to be measured, obtain the quantity of defect and the coordinate of defect in n-th layer film;
(2) judge whether the defect of n-th layer film exceeds preassigned; If exceed preassigned, then enter step (3), if do not exceed preassigned, then enter step (5);
(3) familiar lacunas analytical system is to the defect analysis of n-th layer film, show that n-th layer film defects kills and wounds the quantity of wafer yield to be measured;
(4) judge whether the quantity of killing and wounding the defect of wafer yield to be measured exceeds preassigned; If exceed preassigned, then scrap wafer to be measured, if do not exceed preassigned, then enter step (5);
(5) defect of n-th layer film is carried out coordinate with the defect of N-1 layer film to superpose, draw the quantity of the defect of killing and wounding wafer yield to be measured in n-th layer film and N-1 layer film;
(6) judge whether the quantity of killing and wounding the defect of wafer to be measured in n-th layer film and N-1 layer film exceeds preassigned; If exceed preassigned, then scrap wafer to be measured, if do not exceed preassigned, then carry out follow-up production;
Wherein, described N be greater than 0 natural number.
2. defect analysis method as claimed in claim 1, it is characterized in that, described defects analysis system comprises:
Described crystal column surface to be measured is divided into service area and virtual area;
Calculate in n-th layer film and fall into the quantity that the defect of wafer yield to be measured is killed and wounded in described service area.
3. defect analysis method as claimed in claim 2, it is characterized in that, the part be all connected with N-1 layer film and M layer film circuit in n-th layer film is defined as service area, wherein M is the natural number being greater than N.
4. defect analysis method as claimed in claim 3, it is characterized in that, by all can the part of realizing circuit function with N-1 layer film electric isolution in n-th layer film, and all can the part of realizing circuit function with M layer film electric isolution in n-th layer film, be all defined as service area.
5. defect analysis method as claimed in claim 3, it is characterized in that, all the part of the closeness improving described crystal column surface to be measured is used for N-1 layer film electric isolution by n-th layer film, and M layer film electric isolution is for improving the part of the closeness of described crystal column surface to be measured, is all defined as described virtual area.
6. defect analysis method as claimed in claim 3, it is characterized in that, after the defect of n-th layer film and the defect of N-1 layer film being carried out coordinate and superposing, again the defect of n-th layer film is carried out coordinate with the service area of M layer film to superpose, show that the quantity of the defect of wafer yield to be measured can be killed and wounded in service area that the defect of n-th layer film falls into M layer film.
7. defect analysis method as claimed in claim 6, it is characterized in that, judge whether the quantity that the defect of wafer yield to be measured can be killed and wounded in service area that the defect of n-th layer film falls into M layer film exceeds preassigned, if exceed preassigned, then scrap wafer to be measured, if do not exceed preassigned, then carry out follow-up production.
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| CN201310444792.7A CN104465434B (en) | 2013-09-23 | 2013-09-23 | Defect analysis method |
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Cited By (1)
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| CN107683495A (en) * | 2015-06-19 | 2018-02-09 | 科磊股份有限公司 | Examined again using the presheaf rejected region of design |
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| CN104465434B (en) | 2017-07-11 |
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