CN104465421A - Method for removing welding spots - Google Patents
Method for removing welding spots Download PDFInfo
- Publication number
- CN104465421A CN104465421A CN201410164059.4A CN201410164059A CN104465421A CN 104465421 A CN104465421 A CN 104465421A CN 201410164059 A CN201410164059 A CN 201410164059A CN 104465421 A CN104465421 A CN 104465421A
- Authority
- CN
- China
- Prior art keywords
- solder joint
- chip
- probe
- metal wire
- welding spots
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/98—Methods for disconnecting semiconductor or solid-state bodies
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/018—Unsoldering; Removal of melted solder or other residues
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/98—Methods for disconnecting semiconductor or solid-state bodies
Abstract
The invention discloses a method for removing welding spots. The method comprises the steps that firstly, a metal line connected to a welding pad through the welding spots is removed; secondly, a chip with the metal line removed is fixed to a sample platform of a probe station; thirdly, the probe tip of a probe is used for pushing the root of the welding spots so as to disengage the welding spots from the welding pad completely; lastly, the disengaged welding spots are removed from the chip. According to the method, a manual grinding method is not adopted, the welding pad and a to-be-analyzed structure cannot be abraded, physical positioning and following analyzing are not affected, and the success rate of manufactured samples is increased; the welding spots are removed through the probe, the chip cannot be contaminated, the operation process is safe and simple, and the sample manufacturing time is shortened; the old probe in the sample platform of the probe station serves as a tool, cost is hardly produced, and secondary using of the waste resource is achieved.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly relate to a kind of method removing solder joint.
Background technology
Need to carry out failure analysis to chip in the manufacture process of semiconductor, because the operation of technical staff and other problems can make the solder joint of metal lead wire often can exceed chip pad, and shelter from chip lower floor structure to be analyzed, thus physical positioning when making subsequent analysis is affected (as depicted in figs. 1 and 2); If utilize illuminating microscope (EmissionMicroscope, be called for short: OBRICH pattern EMMI) carries out abnormity point location to this chip, if this abnormity point is in the lower floor of being blocked by solder joint just, so photon or laser signal will be blocked by solder joint, thus cannot obtain correct positioning result.
By focused ion beam, (Focused Ion Beam, is called for short: FIB) make cross section tomography to structure place, for analyzing and the pattern of observation structure, physical imperfection or damage, thus improves or adjustment structural design or process conditions.Because solder joint has certain thickness, the rough polishing degree of depth (as Fig. 3 A and 3B) must be strengthened when FIB cross-section analysis is carried out to structure and the metal wire of remnants also can stop detector receive secondary electron signal, the secondary electron image of structure to be analyzed cannot be observed.
Therefore, the removal of the solder joint of metal lead wire on weld pad just can not must be affected subsequent analysis, the fault of construction of analysis chip of just can fixing a point.
The method of existing removal solder joint is hand-ground and wet etching.Hand-ground method principle is similar to " chemico-mechanical polishing " in semiconductor technology, on the auxiliary foundation of lapping liquid, realizes with chemical reaction and mechanical lapping dual-action.But grinding rate and mechanical stress are subject to the impact of material kind, and hand-ground is to controlling evenness and the long-time uniformity of surrounding and watching region, arteriopathyly not easily to grasp, structure to be analyzed may be made to sustain damage, and lapping liquid itself also can have pollution to the surface of chip, the lapping liquid on top layer must be removed clean after grinding.If it is not chip area is very little, then easy to operate in process of lapping, often can come off from abrasive disk and lose in fetching process.So hand-ground method not only operating procedure is many, length consuming time, and mortality is high.
Wet etching utilizes chemical principle, can be eroded by solder joint with the acid of metal lead wire reaction.Although this method is consuming time short, there is danger.As the passivation layer of fruit chip and metal interlevel film have slight crack, acid can penetrate into lower floor by these slight cracks, destroys structure to be analyzed, causes sample preparation failure.
Chinese patent (CN203197393U) discloses a kind of welding machine tool, is specifically related to a kind of Novel spot welding solder joint remover.It comprises installing handle and the bit head be fixedly connected with it, bit head comprises fixed part and the drill bit be fixedly connected with it, drill bit is made up of the location drill bit at center and the hollow boring bit of peripheral tubular, location drill bit is positioned at the center of hollow boring bit inside, the length 0.2-0.5mm longer than the length of hollow boring bit of location drill bit, hollow boring bit front portion is provided with spacing ring.
This patent is applied in the removal of weld solder joint when must again weld because welding position is inaccurate, it is lower that this programme has the running cost that removal efficiency is higher, operating technology requirement is low, overall, but be restricted in small design application, therefore said apparatus is not adapted at widely using of small design application.
Summary of the invention
In view of the above problems, the invention provides a kind of method utilizing probe to remove solder joint on chip, replace existing hand-ground and wet etching, this new method compares existing method safety, simple to operate and consuming time short, especially has very high success rate.
The technical scheme that technical solution problem of the present invention adopts is:
Remove a method for solder joint, be applied in the chip comprised with test structure, described solder joint is positioned at the upper strata of described test structure, and partially or completely stops described test structure, it is characterized in that, described method comprises:
Step S1, will be connected to by described solder joint a weld pad metal wire remove;
Step S2, be fixed on the sample stage of a probe station by removing the chip of described metal wire;
Step S3, the needle point of probe is utilized to promote the root of described solder joint, so that described solder joint is departed from described weld pad completely;
Step S4, the solder joint of disengaging to be removed from described chip.
A kind of above-mentioned method removing solder joint, wherein, in step S4, adopts gas to be blown away from described chip by the solder joint of disengaging.
A kind of above-mentioned method removing solder joint, wherein, described gas is nitrogen.
A kind of above-mentioned method removing solder joint, wherein, in step in S1, adopts tweezers to remove described metal wire.
A kind of above-mentioned method removing solder joint, wherein, in step S2, first the chip after the described metal wire of removal is pasted to one piece of area and be greater than on the silicon chip of described chip, then this silicon chip is adsorbed on described sample stage by the vacuum absorption holes of the sample stage of described probe station.
A kind of above-mentioned method removing solder joint, wherein, is pasted the chip after the described metal wire of removal on described silicon chip by conducting resinl or double faced adhesive tape.
A kind of above-mentioned method removing solder joint, wherein, in step S3, utilizing the needle point of probe to promote in the process of the root of described solder joint, accurately locates the position of described probe by the microscope of the sample stage of described probe station.
Technique scheme tool has the following advantages or beneficial effect:
Existing hand-ground and wet etching is replaced by technique scheme; avoid the damage to chip in technical process; thus protect solder joint and structure to be analyzed; do not affect physical positioning and subsequent analysis; and produce any cost hardly, achieve simultaneously and the secondary of waste and old resource is utilized.
Accompanying drawing explanation
With reference to appended accompanying drawing, to describe embodiments of the invention more fully.But, appended accompanying drawing only for illustration of and elaboration, do not form limitation of the scope of the invention.
Fig. 1 is the schematic diagram of the test structure sheltered from by solder joint in the inventive method;
Fig. 2 is the schematic diagram of the test structure do not sheltered from by solder joint in the inventive method;
Fig. 3 A and Fig. 3 B is the structural representation that solder joint in the inventive method adds the FIB rough polishing degree of depth;
Fig. 4 is the structural representation that the inventive method chips conducting resinl adheres on bulk silicon chip;
Fig. 5 is the structural representation that forwarding method middle probe needle point of the present invention touches solder joint root;
Fig. 6 is the structural representation that the inventive method middle probe promotes solder joint when sliding forward and departs from weld pad;
Wherein, 1 is chip; 2 is weld pads; 3 is solder joints; 4 is probes; 5 is silicon chips; 6 is conduction carbon pastes.
Embodiment
The invention provides a kind of method removing solder joint, can be applicable to that technology node is 90nm, 65/55nm, 45/40nm, 32/28nm, be more than or equal to 130nm and be less than or equal in the technique of 22nm; Can be applicable in following technology platform: Logic, Memory, RF, HV, Analog/Power, MEMS, CIS, Flash, eFlash and Package.
The present invention is a kind of method removing solder joint, and be applied in the chip comprised with test structure, described solder joint is positioned at the upper strata of described test structure, and partially or completely stops described test structure, and the method mainly comprises the steps:
Step S1, will be connected to by described solder joint a weld pad metal wire remove;
Step S2, be fixed on the sample stage of a probe station by removing the chip of described metal wire;
Step S3, the needle point of probe is utilized to promote the root of described solder joint, so that described solder joint is departed from described weld pad completely;
Step S4, the solder joint of disengaging to be removed from described chip.
Below in conjunction with the drawings and specific embodiments, the invention will be further described, but not as limiting to the invention.
In the present embodiment, as shown in Figure 5, a chip 1 is provided with two weld pads 2, comprise the test structure needing to carry out electromigration (EM) and test wherein in a weld pad 2, in depression angle, this test structure block by the solder joint 3 that is positioned at directly over it, because one end of this solder joint 3 connects weld pad 2, the other end connects a wires (not shown), so before being removed by solder joint 3, needs first to be removed by the metal wire being connected to solder joint 3.
First, by tweezers, the metal wire being connected to this solder joint 3 is pulled out, solder joint 3 is only connected with weld pad 2.
Then, be fixed on the sample stage of probe station by eliminating the chip after metal wire 1, concrete, this chip 1 is adsorbed by the vacuum suction mouth on the sample stage of probe station, thus fixing.In this step, according to varying in size of chip 1, can in different ways chip 1 be fixed on the sample stage of probe station, if the size of chip 1 is greater than the diameter of vacuum suction mouth, so when fixed chip 1, only need directly by tweezers, chip 1 to be adsorbed in this vacuum suction mouth, if when the size of chip 1 is less than or just equals the diameter of vacuum suction mouth, then can not directly by the absorption of this vacuum suction mouth, at this moment, first this chip 1 can be sticked to a size bigger silicon chip 5 surface, then by the another side of silicon chip 5 being adsorbed in the vacuum suction mouth position of the sample stage of probe station, preferably, as shown in Figure 4, can adopt conduction carbon paste 6 or double faced adhesive tape that chip 1 is adhered to the surface of silicon chip 5.
Then, as shown in Figure 6, use probe 4, the needle point of probe 4 is acted on the root of solder joint 3 on chip 1, and and then gradually promote solder joint 3, make it depart from weld pad 2 completely.In this step, by the microscope of the sample stage of probe station, the coordinate of target solder joint 3 can be utilized, accurately probe 4 fallen within the root of solder joint 3, thus promote.Due in this process, probe 4 only plays the effect that a physics promotes, and does not need to carry out testing electrical property to device, therefore, only adopts used old probe.
Finally, the solder joint 3 of above-mentioned disengaging is removed from chip 1, the test structure be blocked can be exposed completely.In this step, need first the sample stage of chip 1 from probe station to be taken off, and adopt air-flow to be blown away by the solder joint 3 come off, preferably, the solder joint 3 come off blows away from chip 1 surface by the nitrogen that nitrogen gun can be adopted to blow out, because the character of nitrogen is comparatively stable, so any damage can't be caused to the test structure on chip 1 in the process blowing away solder joint 3.
In sum, the invention provides a kind of method removing solder joint and do not adopt hand-ground method, so weld pad and structure to be analyzed can not be worn, do not affect physical positioning and subsequent analysis, improve the success rate of sample preparation; Use probe to remove solder joint, can not chip be polluted, and safe operation process is simple, and shorten the sample preparation time; Use the old probe of the sample stage of probe station as instrument, produce any cost hardly, realize utilizing the secondary of waste and old resource simultaneously.
For a person skilled in the art, after reading above-mentioned explanation, various changes and modifications undoubtedly will be apparent.Therefore, appending claims should regard the whole change and correction of containing true intention of the present invention and scope as.In Claims scope, the scope of any and all equivalences and content, all should think and still belong to the intent and scope of the invention.
Claims (7)
1. remove a method for solder joint, be applied in the chip comprised with test structure, described solder joint is positioned at the upper strata of described test structure, and partially or completely stops described test structure, it is characterized in that, described method comprises:
Step S1, will be connected to by described solder joint a weld pad metal wire remove;
Step S2, be fixed on the sample stage of a probe station by removing the chip of described metal wire;
Step S3, the needle point of probe is utilized to promote the root of described solder joint, so that described solder joint is departed from described weld pad completely;
Step S4, the solder joint of disengaging to be removed from described chip.
2. the method removing solder joint as claimed in claim 1, is characterized in that, in step S4, adopts gas to be blown away from described chip by the solder joint of disengaging.
3. the method removing solder joint as claimed in claim 2, it is characterized in that, described gas is nitrogen.
4. the method removing solder joint as claimed in claim 1, is characterized in that, in step S1, adopts tweezers to remove described metal wire.
5. the method removing solder joint as claimed in claim 1, it is characterized in that, in step S2, first the chip after the described metal wire of removal is pasted to one piece of area and be greater than on the silicon chip of described chip, then this silicon chip is adsorbed on described sample stage by the vacuum absorption holes of the sample stage of described probe station.
6. the method removing solder joint as claimed in claim 5, is characterized in that, is pasted on described silicon chip by the chip after the described metal wire of removal by conducting resinl or double faced adhesive tape.
7. the method removing solder joint as claimed in claim 1, being is characterized in that, in step S3, utilizing the needle point of probe to promote in the process of the root of described solder joint, accurately being located the position of described probe by the microscope of the sample stage of described probe station.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410164059.4A CN104465421A (en) | 2014-04-22 | 2014-04-22 | Method for removing welding spots |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410164059.4A CN104465421A (en) | 2014-04-22 | 2014-04-22 | Method for removing welding spots |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104465421A true CN104465421A (en) | 2015-03-25 |
Family
ID=52911274
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410164059.4A Pending CN104465421A (en) | 2014-04-22 | 2014-04-22 | Method for removing welding spots |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104465421A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108515294A (en) * | 2018-05-18 | 2018-09-11 | 华霆（合肥）动力技术有限公司 | Solder joint remove device and method |
| CN111745255A (en) * | 2020-06-28 | 2020-10-09 | 温州医科大学附属眼视光医院 | Convenient maintenance platform of medical instrument spare part |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1619791A (en) * | 2003-11-21 | 2005-05-25 | 台湾积体电路制造股份有限公司 | Apparatus for shear testing of solder ball |
| WO2010020778A1 (en) * | 2008-08-19 | 2010-02-25 | Dage Precision Industries Ltd. | High speed shear test device and method |
| US20110277556A1 (en) * | 2010-05-14 | 2011-11-17 | Nordson Corporation | System and method for testing of bonds of a semiconductor assembly |
| CN102368517A (en) * | 2011-10-25 | 2012-03-07 | 浙江名芯半导体科技有限公司 | LED chip pad metal ball rejecting tool and rejecting method thereof |
| CN203197393U (en) * | 2013-02-22 | 2013-09-18 | 浙江吉利汽车有限公司 | Novel spot welding spot dismantling device |
-
2014
- 2014-04-22 CN CN201410164059.4A patent/CN104465421A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1619791A (en) * | 2003-11-21 | 2005-05-25 | 台湾积体电路制造股份有限公司 | Apparatus for shear testing of solder ball |
| WO2010020778A1 (en) * | 2008-08-19 | 2010-02-25 | Dage Precision Industries Ltd. | High speed shear test device and method |
| US20110277556A1 (en) * | 2010-05-14 | 2011-11-17 | Nordson Corporation | System and method for testing of bonds of a semiconductor assembly |
| CN102297837A (en) * | 2010-05-14 | 2011-12-28 | 诺信公司 | Apparatus and method for testing of bonds of a semiconductor assembly |
| CN102368517A (en) * | 2011-10-25 | 2012-03-07 | 浙江名芯半导体科技有限公司 | LED chip pad metal ball rejecting tool and rejecting method thereof |
| CN203197393U (en) * | 2013-02-22 | 2013-09-18 | 浙江吉利汽车有限公司 | Novel spot welding spot dismantling device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108515294A (en) * | 2018-05-18 | 2018-09-11 | 华霆（合肥）动力技术有限公司 | Solder joint remove device and method |
| CN111745255A (en) * | 2020-06-28 | 2020-10-09 | 温州医科大学附属眼视光医院 | Convenient maintenance platform of medical instrument spare part |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150325 |