CN104465366B - A kind of NDC growth control methods - Google Patents
A kind of NDC growth control methods Download PDFInfo
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- CN104465366B CN104465366B CN201410714834.9A CN201410714834A CN104465366B CN 104465366 B CN104465366 B CN 104465366B CN 201410714834 A CN201410714834 A CN 201410714834A CN 104465366 B CN104465366 B CN 104465366B
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- growth thickness
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Abstract
The present invention relates to field of manufacturing semiconductor devices, more particularly to a kind of NDC growth control methods.After wafer acceptance testing engineer gives probe card maximum acupuncture treatment ability, engineer can input the NDC generation thickness ranges that need to be confirmed, by regression analysis in the case where cavity blemish not occurring, the pot life of wafer acceptance testing time returns, engineer can carry out reliability demonstration by the Sensitivity Analysis Method of offer simultaneously, wafer acceptance testing row's goods control is carried out according to the data of offer, processing procedure defect can be both avoided, improve wafer acceptance testing ability and operating efficiency again.
Description
Technical field
The present invention relates to field of manufacturing semiconductor devices, more particularly to a kind of NDC growth control methods.
Background technology
In recent years, the semiconductor crystal wafer manufacturing process equipment in semiconductor crystal wafer manufactory, hereinafter referred to as " FAB ", lead to
Doped silicon carbide film (Nitride Doped Silicon Carbide, abbreviation NDC) can often be used and be used as dielectric barrier,
Its object is to prevent metal from being spread into medium with dielectric barrier.
After wafer preparation, it usually needs carrying out WAT tests, (Wafer Acceptance Test, wafer, which is permitted to receive, to be surveyed
Examination) technique, i.e., had an acupuncture treatment by probe and electrical parameter measurement is carried out to each chip on wafer.But before measuring because various
Objective condition need to carry out row's goods to test Lot (batch), cause some Lot Q-Time times (Queue Time, that is, when waiting
Between) long.If NDC growth thickness is inadequate, can cause a large amount of cavity blemish problems long afterwards exposing, can not by wafer it
Surface is completely covered, and forms cavity.But NDC growth thickness it is blocked up can cause WAT test acupuncture treatment failure, due to can not accurately sentence
The optimal value of disconnected NDC growth thickness, cause FAB to provide substantial amounts of manpower and materials and carry out slicing experiment, and then greatly reduce
Process capability and FAB production capacities.
It can only pass through reality of largely cutting into slices by engineer experience to NDC growth thickness experimental analyses in existing NDC processing procedures
Test and judge whether the NDC thickness can use：Such as in WATQ-Time overlong times, if sky can be caused because NDC thickness is excessively thin
Hole defect, or cause acupuncture treatment to fail because NDC thickness is blocked up.But this method greatly reduces process capability and FAB production capacities.
Therefore, in the prior art the defects of need badly a kind of new solution be provided, turn into those skilled in the art
It is directed to the direction of research.
The content of the invention
In view of the above-mentioned problems, the present invention relates to a kind of NDC growth control methods, it is characterised in that including：
Step S1, product type is selected, being grown on the product has the NDC；
Step S2, regression analysis is carried out according to the NDC process capabilities；
Step S3, the data variation scope provided according to the regression analysis carries out sensitivity analysis, to determine the NDC
The optimal solution of growth thickness.
Above-mentioned method, it is characterised in that also include providing a probe card for being used to detect the product；
Tested using the maximum acupuncture treatment ability of the probe card.
Above-mentioned method, it is characterised in that also include：Also include in the step S3：If given NDC growth
Thickness range, sensitivity analysis is carried out by being pointed to the growth thickness of the NDC of the growth thickness scope, it is determined that described
The optimal solution of the NDC growth thickness in the range of growth thickness.
Above-mentioned method, it is characterised in that the parameter of the regression analysis includes NDC growth thickness or wafer acceptance testing
Stand-by period.
Above-mentioned method, it is characterised in that also include carrying out the stand-by period of wafer acceptance testing in the step S2
Regression analysis.
Above-mentioned method, it is characterised in that also include：
Historical data integration is carried out for different product before step S1 is carried out, then carries out NDC for different product
The stand-by period of thickness and wafer acceptance testing establishes model of fit.
Above-mentioned method, it is characterised in that the regression analysis in the step S2 is to carry out selected item based on historical data
Regression analysis, or selected item regression analysis is carried out based on user's data-oriented scope and historical data.
Above-mentioned method, it is characterised in that also include in the above method：
Step S4, processing procedure checking is carried out to the NDC according to optimal solution.
Foregoing invention has the following advantages that or beneficial effect：
In summary, a kind of NDC growth control methods proposed by the present invention, by using the above method, it is possible to reduce NDC
Processing procedure time delay is cut into slices the time, and engineer can quickly lock tribute of the stand-by period of wafer acceptance testing to NDC processing procedure defects
Offer and stand-by period fixing situation under NDC processing procedures Maximum Capability Envelope, reduce processing procedure time delay range, improve NDC process capabilities
And wafer acceptance testing ability.
Brief description of the drawings
By reading the detailed description made with reference to the following drawings to non-limiting example, the present invention and its feature, outside
Shape and advantage will become more apparent.The identical mark instruction identical part in whole accompanying drawings.Not can according to than
Example draws accompanying drawing, it is preferred that emphasis is shows the purport of the present invention.
Fig. 1 is to grow control operation schematic flow sheet to NDC in the present invention.
Embodiment
The present invention is further illustrated with specific embodiment below in conjunction with the accompanying drawings, but not as the limit of the present invention
It is fixed.
To solve to cause FAB to provide largely because of the optimal value that can not accurately judge NDC growth thickness in the prior art
Manpower and materials carry out slicing experiment, and then the defects of greatly reduce process capability and FAB production capacities, the present invention provides a kind of right
NDC growth control methods, as shown in Figure 1.
Step S1, our product types to be tested are selected, has on the product and growth is operated according to actual process
NDC, the NDC growth thickness on each product are preferably different.
In an embodiment of the present invention, also need to provide the probe card for being used for carrying out product electrical detection first, it is preferred that
Product is tested using the maximum acupuncture treatment ability of the probe card, to avoid subsequently to the checking of NDC processing procedures and data modeling
Impact, while ensure that follow-up NDC growth thickness meets the electrical detection requirement of probe card.
Step S2, according to the stand-by period of the NDC process capabilities of selected product and wafer acceptance testing return and divide
Analysis.The analysis process is based on two aspects, is to carry out selected item regression analysis based on historical data respectively, or based on use
Family data-oriented scope and historical data carry out selected item regression analysis., can based on two above-mentioned aspects in subsequent operation
The reliability of data is confirmed with this.
The parameter applied in regression analysis includes the stand-by period of NDC growth thickness and/or wafer acceptance testing.
In an embodiment of the present invention, for objectively analysis NDC optimum growh thickness, can by establish such as Q-Time (
When the time) model of fit between NDC corresponding with during cavity blemish growth thickness, do not occurring in order to which subsequent analysis goes out
Cavity blemish and satisfaction are to the NDC growth thickness optimal solutions in the case of the requirement of product electrical detection, such as try to achieve NDC growth thickness
The optimum range of degree.
Step S3, the data variation scope provided according to regression analysis carry out sensitivity analysis, it has been determined that NDC growth thickness
Optimal solution.
In this process, if WAT engineer is provided with NDC growth thickness scope, within the range to NDC growth
Thickness carries out sensitivity analysis, and then determines the optimal solution of the NDC growth thickness in the thickness range.Wherein, it is also possible to go out
Now without solution situation, it is invalid that the NDC now provided growth thickness scope is considered as.
Step S4, it is determined that after the optimal solution of NDC growth thickness, the checking of the progress processing procedure to NDC, to determine this most
Cavity blemish does not occur and meets the requirement of product electrical detection by NDC of the excellent solution within the stand-by period, further reduces NDC systems
The scope of journey, improve NDC process capabilities.
In summary, a kind of NDC growth control methods of the present invention, probe is given in wafer acceptance testing engineer
After blocking maximum acupuncture treatment ability, engineer can input the NDC generation thickness ranges that need to be confirmed, cavity is not occurring by regression analysis
In the case of defect, the pot life of wafer acceptance testing time returns, while engineer can pass through the sensitivity analysis of offer
Method carries out reliability demonstration, carries out wafer acceptance testing row's goods control according to the data of offer, can both avoid processing procedure defect, carry again
High wafer acceptance testing ability and operating efficiency.
By explanation and accompanying drawing, the exemplary embodiments of the specific structure of embodiment are given, it is smart based on the present invention
God, it can also make other conversions.Although foregoing invention proposes existing preferred embodiment, however, these contents are not intended as
Limitation.
For a person skilled in the art, after reading described above, various changes and modifications undoubtedly will be evident.
Therefore, appended claims should regard whole variations and modifications of the true intention and scope that cover the present invention as.Weighing
Any and all scope and content of equal value, are all considered as still belonging to the intent and scope of the invention in the range of sharp claim.
Claims (5)
- A kind of 1. NDC growth control methods, it is characterised in that including：Step S1, product type is selected, being grown on the product has the NDC；Step S2, regression analysis is carried out according to the NDC process capabilities, the parameter of the regression analysis includes NDC growth thickness Or the stand-by period of wafer acceptance testing；Step S3, the data variation scope provided according to the regression analysis carry out sensitivity analysis, to determine that the NDC grows The optimal solution of thickness；Also include in the step S3：If given NDC growth thickness scope, by being pointed to the growth thickness scope The growth thickness of the NDC carry out sensitivity analysis, it is determined that the NDC growth thickness in the range of the growth thickness Optimal solution；Historical data integration is carried out for different product before step S1 is carried out, then carries out NDC thickness for different product Model of fit is established with the stand-by period of wafer acceptance testing.
- 2. according to the method for claim 1, it is characterised in that offer one is also provided and is used for what the product was detected Probe card；Tested using the maximum acupuncture treatment ability of the probe card.
- 3. according to the method for claim 1, it is characterised in that in the step S2 also include to wafer acceptance testing etc. Treat that the time carries out regression analysis.
- 4. according to the method for claim 1, it is characterised in that the regression analysis in the step S2 is to be based on historical data Selected item regression analysis is carried out, or selected item regression analysis is carried out based on user's data-oriented scope and historical data.
- 5. according to the method for claim 1, it is characterised in that also include in the above method：Step S4, processing procedure checking is carried out to the NDC according to optimal solution.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410714834.9A CN104465366B (en) | 2014-11-28 | 2014-11-28 | A kind of NDC growth control methods |
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| CN201410714834.9A CN104465366B (en) | 2014-11-28 | 2014-11-28 | A kind of NDC growth control methods |
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| CN104465366A CN104465366A (en) | 2015-03-25 |
| CN104465366B true CN104465366B (en) | 2017-12-05 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1920720A (en) * | 2005-08-22 | 2007-02-28 | 力晶半导体股份有限公司 | Method for adjusting machine set, manufacture control system and semiconductive manufacture system |
| CN103714191A (en) * | 2012-10-09 | 2014-04-09 | 台湾积体电路制造股份有限公司 | 2D/3D analysis for abnormal tools and stage diagnosis |
| CN103943528A (en) * | 2014-03-24 | 2014-07-23 | 上海华力微电子有限公司 | Off-line monitoring method for NDC thin films |
-
2014
- 2014-11-28 CN CN201410714834.9A patent/CN104465366B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1920720A (en) * | 2005-08-22 | 2007-02-28 | 力晶半导体股份有限公司 | Method for adjusting machine set, manufacture control system and semiconductive manufacture system |
| CN103714191A (en) * | 2012-10-09 | 2014-04-09 | 台湾积体电路制造股份有限公司 | 2D/3D analysis for abnormal tools and stage diagnosis |
| CN103943528A (en) * | 2014-03-24 | 2014-07-23 | 上海华力微电子有限公司 | Off-line monitoring method for NDC thin films |
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| CN104465366A (en) | 2015-03-25 |
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