CN104465351B - A kind of method for improving metal silicide - Google Patents
A kind of method for improving metal silicide Download PDFInfo
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- CN104465351B CN104465351B CN201410710161.XA CN201410710161A CN104465351B CN 104465351 B CN104465351 B CN 104465351B CN 201410710161 A CN201410710161 A CN 201410710161A CN 104465351 B CN104465351 B CN 104465351B
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 78
- 239000002184 metal Substances 0.000 title claims abstract description 78
- 238000000034 method Methods 0.000 title claims abstract description 54
- 229910021332 silicide Inorganic materials 0.000 title claims abstract description 33
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 title claims abstract description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 90
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 43
- 239000010703 silicon Substances 0.000 claims abstract description 43
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 239000011737 fluorine Substances 0.000 claims abstract description 29
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 29
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 26
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 26
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000003921 oil Substances 0.000 claims abstract description 9
- 230000002940 repellent Effects 0.000 claims abstract description 9
- 239000005871 repellent Substances 0.000 claims abstract description 9
- 238000001312 dry etching Methods 0.000 claims abstract description 8
- 238000010438 heat treatment Methods 0.000 claims description 16
- 239000002905 metal composite material Substances 0.000 claims description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910017052 cobalt Inorganic materials 0.000 claims description 5
- 239000010941 cobalt Substances 0.000 claims description 5
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 229910003978 SiClx Inorganic materials 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- GDMRBHLKSYSMLJ-UHFFFAOYSA-N [F].O=[Si] Chemical compound [F].O=[Si] GDMRBHLKSYSMLJ-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 82
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 abstract description 28
- 238000000137 annealing Methods 0.000 abstract description 13
- 239000004065 semiconductor Substances 0.000 abstract description 10
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910021334 nickel silicide Inorganic materials 0.000 abstract description 5
- 238000012421 spiking Methods 0.000 abstract description 4
- 238000005457 optimization Methods 0.000 abstract description 3
- 239000011241 protective layer Substances 0.000 abstract description 3
- 238000003384 imaging method Methods 0.000 abstract description 2
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical group [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The present invention relates to semiconductor device piece optimization field, more particularly to a kind of method that metal silicide improves, and after the grid of a silicon substrate is formed, deposits the silica (FSG) of one layer of fluorine doped, then deposited silicon nitride, and form side wall by dry etching.After device is formed, deposited silicon nitride, it is necessary to form the place of metal silicide, removes the silicon nitride of covering thereon as SAB masks by exposure imaging Etch selectivity.Deposited metal layer and protective layer silicon nitride, carry out double annealing and form nickel silicide.Fluorine in side wall increases the Oil repellent in base silicon, reduces the possibility that Ni piping and spiking occur by being spread in the follow-up basad silicon of annealing.
Description
Technical field
The present invention relates to semiconductor device piece optimization field, more particularly to a kind of method for improving metal silicide.
Background technology
In integrated circuit and silicon device technique, silicon oxidation is typically all carried out under 1000 DEG C or so of hot conditions,
Under the conditions of this, the problems such as dopant redistribution, hot induced defects and warpage often occurs in silicon chip.Therefore, to integrated circuit device
The further diminution of part size brings serious hindrance, in order to adapt to the needs of large scale integrated circuit, reduces these factors
Influence, silicon chip need to use cryogenic conditions to aoxidize.But conventional low temperature oxidation technology, when temperature is less than or equal to 800 DEG C, oxygen
It is too slow to change speed, it is impossible to apply.Therefore, electrochemistry magazine once reported a kind of sample plasma mingling fluorine and oxidation metlhod, with this side
Method can improve the oxidation rate of silicon chip under cryogenic, and then it but introduces such as high-energy radiation damage defect, and oxide layer
Quality can not be satisfactory.In addition, the remote plasma precleaning (NF of Applied Materials's invention3+NH3, remote
Plasma pre-clean), while the natural oxidizing layer on S/D surfaces is being removed using remote plasma precleaning, energy
Enough increase the Oil repellent in base silicon, compared to DHF wet clean, Ni can effectively improve using remote plasma precleaning
Piping and spiking.
Chinese patent (CN 1033545A) describes a kind of fluorine doped, cryogenic silicon oxidation method, use fluid, fluorine-containing reagent for
Fluorine doped source, carried by carrying gas, oxygen dilution, fluorine doped is realized using conventional thermal oxidation stove, 800 DEG C of low temperature or less than 800 DEG C
Silicon aoxidizes.
Above-mentioned patent does not make referrals to the deposition fluorine-doped silica layer on semiconductor junction component, passes through annealing process
The technical characteristic of the basad diffusion of fluorine in fluorine-doped silica layer.
The content of the invention
In view of the above-mentioned problems, the present invention relates to a kind of method for improving metal silicide, it is characterised in that including following step
Suddenly：
Step S1, there is provided one is preset with the substrate that metal silicide prepares area, in forming grid structure on the substrate；
Step S2, deposition fluorine-doped silica layer cover the surface of the silicon substrate and grid structure exposure, prepare nitrogen
SiClx layer covers the upper surface of the fluorine-doped silica layer；
Step S3, continue hot first annealing process, the fluorine in the fluorine-doped silica layer is diffused in the substrate；
Step S4, the part fluorine-doped silica layer and silicon nitride layer are removed, the metal silicide will be located at and prepared
The upper surface of substrate and the grid structure in area is exposed, and retains the fluorine-doped silica layer on gate structure sidewall
With silicon nitride layer as side wall；
Step S5, prepared in the exposed metal silicide and prepare metal composite layer on the substrate surface in area, and continued
Second Technology for Heating Processing, metal silicide layer is formed to be prepared in the metal silicide in area
Above-mentioned method, it is characterised in that the substrate is silicon substrate.
Above-mentioned method, it is characterised in that the metal composite layer includes a metal level and on the metal level
Nitrided metal layer.
Above-mentioned method, it is characterised in that the metal level is the wherein at least one selected from titanium, cobalt, nickel or platinum.
Above-mentioned method, it is characterised in that first heat treatment and the described second heat treatment are annealing process.
Above-mentioned method, it is characterised in that the silicon oxide layer of the fluorine doped and described is removed using the method for dry etching
Silicon nitride layer forms the side wall.
Above-mentioned method, it is characterised in that the thickness of the silicon oxide layer of the fluorine doped is 20-100 angstroms.
Above-mentioned method, it is characterised in that the Oil repellent in the silicon oxide layer of the fluorine doped is less than 5%.
Above-mentioned method, it is characterised in that methods described also includes,
One layer of silicon oxide layer is first deposited, then is sequentially depositing the silicon oxide layer and silicon nitride layer of fluorine doped.
Above-mentioned method, it is characterised in that the Oil repellent in the silicon oxide layer of the fluorine doped is less than 10%.
In summary, by adopting the above-described technical solution, the method that a kind of metal silicide proposed by the present invention improves,
After the grid of a silicon substrate is formed, the silica of one layer of fluorine doped, then deposited silicon nitride, and being formed by dry etching are deposited
Side wall.Deposited metal layer and protective layer silicon nitride, carry out double annealing and form nickel-silicon compound.Fluorine in side wall passes through follow-up
Anneal and spread in basad silicon, increase the Oil repellent in base silicon, reduce the possibility that Ni piping and spiking occur.
Brief description of the drawings
Fig. 1-Fig. 5 is the structural representation that the present invention forms metal silicide on semiconductor junction component.
Embodiment
In semiconductor technology, metal-oxide semiconductor, electric crystal are by three electrode institute structures such as grid, source electrode and drain electrode
Into wherein MOS is the main body for forming grid structure.
The MOS of early stage is made up of three-layer-materials such as metal level, silica and silicon bases.But due to most of
Metal it is poor for the adhesive ability of silica, so the polysilicon for having preferable adhesive ability for silica just carries
Go out with substituted metal layer.
However, exist using polysilicon but the problem of resistance value is too high, even if polysilicon, through overdoping, its resistance value is also
It is too high, and inapplicable substitution MOS metal level, metal silicide is then just needed on polysilicon.
In view of the above-mentioned problems, the present invention designs a kind of optimization method of metal silicide, one is deposited in base silicon
The silicon oxide layer of layer fluorine doped, by being spread in the follow-up basad silicon of pyroprocess fluorine, increases base silicon as Fluorine source
Oil repellent, so as to improve semiconductor structure device.
Described in detail with reference to preferred embodiment and accompanying drawing
Specific embodiment 1
The present invention relates to a kind of method for improving existing nickel silicide, including following steps：
As shown in figure 1, step S1, is preset with the silicon substrate 1 in metal silicide preparation area one and forms a grid structure,
The grid structure includes a grid oxic horizon 2 and the grid 3 above the grid oxic horizon 2, grid 3 can with metal gate,
It can be polysilicon gate, be selected according to the needs of practical devices；
As shown in Fig. 2 step S2, sinks in the side of the surface of remaining silicon substrate 1, the upper surface of grid 3 and grid structure
One layer of fluorine-doped silica layer 4 of product, the thickness of the fluorine-doped silica layer 4 are preferably 20-100 angstroms, and the content of wherein fluorine is preferable
5% is less than, then deposits a silicon nitride layer 5 on the surface of the fluorine-doped silica layer 4；
Step S3, the first Technology for Heating Processing is carried out, the Technology for Heating Processing is an annealing process, by fluorine-doped silica layer
Fluorine diffuse in silicon substrate；
As shown in figure 3, step S4, silicon nitride layer 5 and fluorine-doped silica layer 4 are removed to grid using the method for dry etching
3 upper surface and metal silicide prepare the surface of area's silicon substrate 1, and remaining silicon nitride layer 5 and fluorine-doped silica layer 4 are used as should
The side wall of grid structure；
As shown in figure 4, step S5, a metal composite layer is deposited on the device formed after the above procedure, the metal composite
Layer includes a metal level 6 and the nitrided metal layer 7 on metal level 6, i.e. the metal level 6 is covered in the upper surface of grid 3, side
Wall surface and the surface of silicon substrate 1 of side wall both sides, and wherein at least the one of the material of the metal level 6 such as titanium, cobalt, nickel or platinum
Kind, nitrided metal layer is preferably titanium nitride；
As shown in figure 5, step S6, continues the second Technology for Heating Processing processing procedure, preferably with a temperature on 800 DEG C of left sides
Right annealing process, then remove nitrided metal layer 7 and metal level 6 so that the silicon substrate of side wall both sides forms metal silicide
8, and the part of metal level 6 for being maintained at side wall and gate surface has neither part nor lot in reaction, maintains the original state, formation has metal silication structure
Semiconductor devices.
Specific embodiment 2
As shown in Figures 1 to 5, the present invention relates to a kind of method for improving existing nickel silicide, including following step
Suddenly：
As shown in figure 1, step S1, is preset with the silicon substrate 1 in metal silicide preparation area one and forms a grid structure,
The grid structure includes a grid oxic horizon 2 and the grid 3 above the grid oxic horizon 2, grid 3 can with metal gate,
It can be polysilicon gate, be selected according to the needs of practical devices；
Step S2, one layer of oxidation is deposited in the side of the surface of remaining silicon substrate 1, the upper surface of grid 3 and grid structure
Silicon layer (not shown)；
As shown in Fig. 2 step S3, deposits one layer of fluorine-doped silica layer 4 in silica upper surface and forms silica composite bed,
The thickness of the fluorine-doped silica layer 4 is preferably 20-100 angstroms, when forming the silica composite bed, wherein fluorine-doped silica layer
The content of middle fluorine is preferably less than 10%, then deposits a silicon nitride layer 5 on the surface of the fluorine-doped silica layer 4；
Step S4, the first Technology for Heating Processing is carried out, the Technology for Heating Processing is an annealing process, by fluorine-doped silica layer
Fluorine diffuse in silicon substrate；
As shown in figure 3, step S5, silicon nitride layer 5 and fluorine-doped silica layer 4 are removed to grid using the method for dry etching
3 upper surface and the surface of metal silicide preparation area's silicon substrate 1 form the side wall of the grid structure；
As shown in figure 4, step S6, a metal composite layer is deposited on the device formed after the above procedure, the metal composite
Layer includes a metal level 6 and the nitrided metal layer 7 on metal level 6, i.e. the metal level 6 is covered in the upper surface of grid 3, side
Wall surface and the surface of silicon substrate 1 of side wall both sides, and wherein at least the one of the material of the metal level 6 such as titanium, cobalt, nickel or platinum
Kind, nitrided metal layer is preferably titanium nitride；
As shown in figure 5, step S7, continues the second Technology for Heating Processing processing procedure, preferably with a temperature on 800 DEG C of left sides
Right annealing process, then remove nitrided metal layer 7 and metal level 6 so that the silicon substrate of side wall both sides forms metal silicide
8, and the part of metal level 6 for being maintained at side wall and gate surface has neither part nor lot in reaction, maintains the original state, formation has metal silication structure
Semiconductor devices.
Specific embodiment 3
The present invention relates to a kind of method for improving existing nickel silicide, including following steps：
Step S1, it is preset with one on the silicon substrate in metal silicide preparation area and forms some grid structures, these grids
Structure includes a grid oxic horizon and the grid above these grid oxic horizons, and grid can be metal gate, or
Polysilicon gate, selected according to the needs of practical devices；
Step S2, one layer of fluorine doped oxygen is deposited in the side of the surface of remaining silicon substrate, gate upper surface and grid structure
SiClx layer, the thickness of the fluorine-doped silica layer are preferably 20-100 angstroms, and the content of wherein fluorine is preferably less than 5%, then
A silicon nitride layer is deposited on the surface of the fluorine-doped silica layer；
Step S3, the first Technology for Heating Processing is carried out, the Technology for Heating Processing is an annealing process, by fluorine-doped silica layer
Fluorine diffuse in silicon substrate；
Step S4, silicon nitride layer and fluorine-doped silica layer are removed to the upper surface of grid and gold using the method for dry etching
The surface of category silicide preparation area's silicon substrate forms the side wall of these grid structures；
Step S5, one layer of silicon nitride is deposited on the device formed after the above procedure, when needing to form gold in part of devices
When belonging to silicide regions, selective exposure is etched away the silicon nitride layer of these device areas；
Step S6, a metal composite layer is deposited on the device formed after the above procedure, the metal composite layer includes a gold medal
Category layer and the nitrided metal layer on metal level, the i.e. metal level 6 are covered in the upper surface of grid, side wall surface and side wall two
The surface of silicon substrate 1 of side, and the wherein at least one of the material of the metal level such as titanium, cobalt, nickel or platinum, nitrided metal layer are preferred
For titanium nitride；
Step S7, continue the second Technology for Heating Processing processing procedure, preferably with annealing system of the temperature at 800 DEG C or so
Journey, then remove nitrided metal layer and metal level so that the silicon substrate of side wall both sides forms metal silicide, and is maintained at side wall
Reaction is had neither part nor lot in the metal layer part of gate surface, is maintained the original state, forms the semiconductor devices with metal silication structure.
The method that a kind of metal silicide proposed by the present invention improves, after the grid of a silicon substrate is formed, deposit one layer
The silica (FSG) of fluorine doped, then deposited silicon nitride, and side wall is formed by dry etching.After device is formed, deposited silicon nitride
As SAB masks, it is necessary to form the place of metal silicide, remove the nitrogen of covering thereon by exposure imaging Etch selectivity
SiClx.Deposited metal layer and protective layer silicon nitride, carry out double annealing and form nickel silicide.Fluorine in side wall is moved back by follow-up
Spread in the basad silicon of fire, increase the Oil repellent in base silicon, reduce the possibility that Ni piping and spiking occur.
By explanation and accompanying drawing, the exemplary embodiments of the specific structure of embodiment are given, it is smart based on the present invention
God, it can also make other conversions.Although foregoing invention proposes existing preferred embodiment, however, these contents are not intended as
Limitation.
For a person skilled in the art, after reading described above, various changes and modifications undoubtedly will be evident.
Therefore, appended claims should regard whole variations and modifications of the true intention and scope that cover the present invention as.Weighing
Any and all scope and content of equal value, are all considered as still belonging to the intent and scope of the invention in the range of sharp claim.
Claims (8)
- A kind of 1. method for improving metal silicide, it is characterised in that comprise the following steps：Step S1, there is provided one is preset with the substrate that metal silicide prepares area, in forming grid structure on the substrate；Step S2, deposition fluorine-doped silica layer cover the surface of the substrate and grid structure exposure, prepare silicon nitride layer Cover the upper surface of the fluorine-doped silica layer；Step S3, the first Technology for Heating Processing is carried out, the fluorine in the fluorine-doped silica layer is diffused in the substrate；Step S4, the part fluorine-doped silica layer and silicon nitride layer are removed, the metal silicide will be located at and prepared in area Substrate and the upper surface of the grid structure exposed, and retain fluorine-doped silica layer and nitrogen on gate structure sidewall SiClx layer is as side wall；Step S5, prepared in the exposed metal silicide and metal composite layer is prepared on the substrate surface in area, and continue second Technology for Heating Processing, metal silicide layer is formed to be prepared in the metal silicide in area；Methods described also includes, and first deposits one layer of silicon oxide layer, then be sequentially depositing fluorine-doped silica layer and silicon nitride layer；It is described to mix Oil repellent in fluorine silicon oxide layer is less than 10%.
- 2. according to the method for claim 1, it is characterised in that the substrate is silicon substrate.
- 3. according to the method for claim 1, it is characterised in that the metal composite layer includes a metal level and positioned at described Nitrided metal layer on metal level.
- 4. according to the method for claim 3, it is characterised in that the metal level be selected from titanium, cobalt, nickel or platinum wherein extremely Few one kind.
- 5. according to the method for claim 1, it is characterised in that first heat treatment and the described second heat treatment are to move back Fiery processing procedure.
- 6. according to the method for claim 1, it is characterised in that the fluorine-doped silica is removed using the method for dry etching Layer and the silicon nitride layer form the side wall.
- 7. according to the method for claim 1, it is characterised in that the thickness of the fluorine-doped silica layer is 20-100 angstroms.
- 8. according to the method for claim 1, it is characterised in that the Oil repellent in the fluorine-doped silica layer is less than 5%.
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| CN102832112A (en) * | 2011-06-17 | 2012-12-19 | 中芯国际集成电路制造(上海)有限公司 | Method for forming metal silicide |
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