CN104460172A - Micro electro mechanical system display unit, manufacture method thereof and display device - Google Patents
Micro electro mechanical system display unit, manufacture method thereof and display device Download PDFInfo
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- CN104460172A CN104460172A CN201410749513.2A CN201410749513A CN104460172A CN 104460172 A CN104460172 A CN 104460172A CN 201410749513 A CN201410749513 A CN 201410749513A CN 104460172 A CN104460172 A CN 104460172A
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- microelectromechanicdisplay
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- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000010276 construction Methods 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 15
- 229920002120 photoresistant polymer Polymers 0.000 claims description 11
- 239000000428 dust Substances 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 4
- 230000001276 controlling effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 1
- 241000826860 Trapezium Species 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 239000002194 amorphous carbon material Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- GRPQBOKWXNIQMF-UHFFFAOYSA-N indium(3+) oxygen(2-) tin(4+) Chemical compound [Sn+4].[O-2].[In+3] GRPQBOKWXNIQMF-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000011089 mechanical engineering Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/17—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on variable-absorption elements not provided for in groups G02F1/015 - G02F1/169
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00142—Bridges
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/19—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on variable-reflection or variable-refraction elements not provided for in groups G02F1/015 - G02F1/169
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention provides a micro electro mechanical system display unit, a manufacture method thereof and a display device. The micro electro mechanical system display unit comprises a first electrode, a deforming second electrode and a supporting structure between the first electrode and the second electrode. The supporting structure comprises a top surface contacting with the second electrode, a bottom contacting with the first electrode and a side crossed with the top and the bottom; the projection of the top is located in the bottom, and the side is in a slope state. Since the side of the supporting structure between the two electrodes is in the slope state, when the micro electro mechanical system display unit is in the dark state, the second electrode is capable of fitting to the supporting structure tightly, the clearance between the two electrodes can be reduced, and the light leakage caused by the clearance between the two electrodes in the 'closed' state can be optimized.
Description
Technical field
The present invention relates to display field, particularly relate to a kind of microelectromechanicdisplay display unit and preparation method thereof, display device.
Background technology
At present, micro-electromechanical switch (MEMS:Micro-Electro-Mechanical Systems) technology is subject to extensive concern, micro electronmechanical is a kind of industrial technology microelectric technique and mechanical engineering are fused together, and its opereating specification is in micrometer range.
Traditional micro-electromechanical switch structure as shown in Figure 1, primarily of substrate 3 ', first electrode 4 ', supporting construction 2 ', cavity between second electrode 1 ' and two electrodes is formed, wherein, first electrode 4 ' has absorptivity, Absorbable rod some visible light, second electrode 1 ' is the reflection horizon that deformation can occur, according to 2D=N λ, known (D is the length of cavity, λ is the wavelength of incident light), when incident light penetrate the first electrode enter in cavity time, the light only meeting the wavelength of formula above in all spectrum of incident light could produce Constructive interaction and export, now human eye just can observe light, namely current for " to open " state (as shown in Figure 1), and when applying a voltage to the first electrode 4 ', there is deformation and contact with the first electrode 4 ' in the second electrode 1 ', now the length of D can be zero, now incident visible ray is absorbed or is reflected, or through be non-visible light, now human eye can not observe light, namely current is "Off" state (as shown in Figure 2), but, as shown in Figure 2, when above-mentioned micromotor switch is in "Off" state, still space 5 ' can be there is between two electrodes, make light still can proceed to propagate behind this space, thus cause light leakage phenomena.
Summary of the invention
(1) technical matters that will solve
The technical problem to be solved in the present invention how to improve existing micro-electromechanical switch structure when "Off" state due to light leakage phenomena that the gap between two electrodes is caused.
(2) technical scheme
For solving the problems of the technologies described above, technical scheme of the present invention provides a kind of microelectromechanicdisplay display unit, comprise the first electrode, the second electrode of deformation and the supporting construction between described first electrode and described second electrode can occur, described supporting construction comprise contact with described second electrode end face, with the bottom surface that the first electrode contacts and with all crossing side of described end face and described bottom surface, wherein, described end face is positioned at described bottom surface in the projection of described bottom surface, and described side is ramped shaped.
Further, described supporting construction is opaque structure.
Further, described side is plane.
Further, the angle between described side and described bottom surface is 30 degree ~ 50 degree.
For solving the problems of the technologies described above, a kind of display device of the present invention, is characterized in that, comprise above-mentioned arbitrary microelectromechanicdisplay display unit.
For solving the problems of the technologies described above, present invention also offers a kind of method for making of microelectromechanicdisplay display unit, comprising:
Substrate makes the first electrode;
Make supporting construction on the first electrode, described supporting construction comprise with the bottom surface that the first electrode contacts, the end face relative with described bottom surface and with all crossing side of described end face and described bottom surface, described end face is positioned at described bottom surface in the projection of described bottom surface, and described side is ramped shaped;
Described supporting construction makes the second electrode that deformation can occur.
Further, make supporting construction on the first electrode to comprise:
Form supporting layer on the first electrode;
Described supporting layer forms photoresist layer;
Patterned process is carried out to described photoresist layer;
Etch the region exposed in described supporting layer, being 4000-15000 dust m/min at the etch rate of parallel described orientation substrate in the process of described etching, is 6000-11000 dust m/min at the etch rate of vertical described orientation substrate;
Remove remaining photoresist.
Further, described supporting layer is opaque material.
Further, described supporting construction makes the second electrode that deformation can occur to comprise:
Form sacrifice layer on the first electrode;
Described sacrifice layer and described supporting construction are formed the second electrode that deformation can occur;
Remove described sacrifice layer.
Further, the angle between described side and described bottom surface is 30 degree ~ 50 degree.
(3) beneficial effect
The present invention is by being made as ramped shaped by the side of the supporting construction between two electrodes, when microelectromechanicdisplay display unit is dark-state, second electrode also can be close to supporting construction mutually, thus the gap reduced between two electrodes, and then the light leakage phenomena that improvement causes due to the gap between two electrodes during "Off" state.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of a kind of micro-electromechanical switch of the prior art;
Schematic diagram when Fig. 2 is the micro-electromechanical switch "Off" state shown in Fig. 1;
Fig. 3 is the schematic diagram of a kind of microelectromechanicdisplay display unit that embodiment of the present invention provides;
Schematic diagram when Fig. 4 is the microelectromechanicdisplay display unit "Off" state shown in Fig. 3;
Fig. 5-10 is the schematic diagram of a kind of microelectromechanicdisplay display unit method for making that embodiment of the present invention provides.
Embodiment
Below in conjunction with drawings and Examples, the specific embodiment of the present invention is described in further detail.Following examples for illustration of the present invention, but are not used for limiting the scope of the invention.
Fig. 3 is the schematic diagram of a kind of microelectromechanicdisplay display unit that embodiment of the present invention provides, this microelectromechanicdisplay display unit comprises substrate 3, be formed in the first electrode 4 on this substrate 3, the second electrode 1 of deformation and the supporting construction 2 between described first electrode 4 and described second electrode 1 can be there is, described supporting construction 2 comprises the end face 21 contacted with described second electrode 1, the bottom surface 22 contacted with the first electrode 4 and with all crossing side 23 of described end face 21 and described bottom surface 22, wherein, described end face 21 is positioned at described bottom surface 22 in the projection of described bottom surface 22, and described side 23 is ramped shaped.
Wherein, side 23 can be cambered surface or plane, preferably, it can be plane, as shown in Figure 4, when microelectromechanicdisplay display unit is "Off" state, the second electrode 1 that deformation can occur is drawn close to the first electrode 4, because the side 23 of supporting construction is ramped shaped, thus a part for the second electrode 1 also can be close to the side of supporting construction mutually, thus the gap greatly reduced when microelectromechanicdisplay display unit is "Off" state between two electrodes, wherein, angle between side 23 and described bottom surface 22 can be 30 degree ~ 50 degree, such as, can be 35 degree, 40 degree, 45 degree etc.
Particularly, this microelectromechanicdisplay display unit controls by TFT, under TFT is open state, second electrode or the first electrode are applied in voltage, as shown in Figure 4, the second electrode 1 that deformation can occur is drawn close to the first electrode 4, in incident light 6, a part for visible ray is absorbed by the first electrode, another part is reflected by the second electrode, thus without this display unit of visible light-transmissive, this display unit is dark-state (being "Off" state), under TFT is off status, length is kept to be the cavity of D between first electrode and the second electrode, in incident light, a part for visible ray is absorbed by the first electrode, another part produces Constructive interaction through this cavity and projects, this display unit is on state of (being "ON" state), when this display unit is dark-state, due to the side of supporting construction is set to ramped shaped, second electrode also can be close to supporting construction mutually, thus the gap reduced between two electrodes, and then the light leakage phenomena that improvement causes due to the gap between two electrodes during "Off" state.
Preferably, above-mentioned supporting construction can be opaque structure, because the end face 21 of supporting construction is positioned at bottom surface 22 completely in the projection of self bottom surface 22, make end face completely block by bottom surface, this supporting construction is set to opaque shape, when display unit is "Off" state, the light quantity in gap between side and the second electrode injecting supporting construction can be reduced, thus improve light leakage phenomena further.
In addition, embodiment of the present invention additionally provides a kind of display device, and this display device comprises above-mentioned microelectromechanicdisplay display unit.Wherein, this display device can be: any product or parts with Presentation Function such as liquid crystal panel, mobile phone, panel computer, televisor, display, notebook computer, digital album (digital photo frame), navigating instrument.
In addition, the method for making of a kind of microelectromechanicdisplay display unit that embodiment of the present invention provides, this method for making comprises the following steps S1 ~ S3;
S1: make the first electrode on substrate; Wherein, wherein, substrate can be glass material, and the material forming the first electrode can be indium oxide tin glass (ITO), or indium zinc oxide (IZO);
S2: make supporting construction on the first electrode, described supporting construction comprise with the bottom surface that the first electrode contacts, the end face relative with described bottom surface and with all crossing side of described end face and described bottom surface, described end face is positioned at described bottom surface in the projection of described bottom surface, and described side is ramped shaped; Particularly, this step specifically comprises S21 ~ S25;
S21: form supporting layer first on the first electrode, preferably, in order to make the supporting construction of formation be opaque structure, this supporting layer 20 can adopt opaque material;
S22: form photoresist layer on described supporting layer;
S23: patterned process is carried out to described photoresist layer; Particularly, as shown in Figure 5, exposed by mask plate 8 pairs of photoresist layers, then carrying out developing forms the photoresist layer 7 of patterning;
S24: the region exposed in described supporting layer is etched, being 4000-15000 dust m/min at the etch rate of parallel described orientation substrate in the process of described etching, is 6000-11000 dust m/min at the etch rate of vertical described orientation substrate, particularly, etch rate difference can be adopted to form above-mentioned supporting construction, as shown in Figure 6, dry etching can be carried out to supporting layer 20, utilize the parameter regulating dry etching, such as carry out gas ratio, power, the adjustment of pressure, increase the speed of the lateral etching in supporting layer parallel substrate 3 direction to 4000-15000 dust m/min, can be such as 6000 dusts m/min, 10000 Ethylmercurichlorendimides/grade, reduce the speed of the longitudinal direction etching in vertical substrate 3 direction to 6000-11000 dust m/min, can be such as 7000 dusts m/min, 9000 Ethylmercurichlorendimides/grade, like this in the process of etching along with the prolongation of etching time, trapezium structure as shown in Figure 6 can be formed, in addition, also by controlling the etching condition of dry etching, control the angle of gradient between the side 23 of the final supporting construction 2 formed and bottom surface 22, controlling at about 30 ~ 50 degree is optimum condition, pattern as shown in Figure 7 can be finally formed after having etched,
S25: remove the making that remaining photoresist completes supporting construction;
S3: make the second electrode that deformation can occur in described supporting construction, particularly, this step comprises S31 ~ S33;
S31: form sacrifice layer on the first electrode; Particularly, can as shown in Figure 8, deposition of sacrificial layer 9 on the first electrode 4, can be that amorphous carbon material etc. is follow-up can carry out with wet method or dry etching the material removed for the material of sacrifice layer 9;
S32: form the second electrode that deformation can occur on described sacrifice layer and described supporting construction; Particularly, see Fig. 9, the method for deposition can be adopted to make the conductive membrane layer of one deck flexibility as the second electrode 1,
S33: remove described sacrifice layer, particularly, see Figure 10, can utilize lithium chloride and Klorvess Liquid to carry out the removal of amorphous carbon, the final MEMS structure formed with cavity.
The method for making of the microelectromechanicdisplay display unit that embodiment of the present invention provides, by the side of the supporting construction between two electrodes is made as ramped shaped, when microelectromechanicdisplay display unit is dark-state, second electrode also can be close to supporting construction mutually, thus the gap reduced between two electrodes, and then the light leakage phenomena that improvement causes due to the gap between two electrodes during "Off" state.
Above embodiment is only for illustration of the present invention; and be not limitation of the present invention; the those of ordinary skill of relevant technical field; without departing from the spirit and scope of the present invention; can also make a variety of changes and modification; therefore all equivalent technical schemes also belong to category of the present invention, and scope of patent protection of the present invention should be defined by the claims.
Claims (10)
1. a microelectromechanicdisplay display unit, comprise the first electrode, the second electrode of deformation and the supporting construction between described first electrode and described second electrode can occur, it is characterized in that, described supporting construction comprise contact with described second electrode end face, with the bottom surface that the first electrode contacts and with all crossing side of described end face and described bottom surface, wherein, described end face is positioned at described bottom surface in the projection of described bottom surface, and described side is ramped shaped.
2. microelectromechanicdisplay display unit according to claim 1, is characterized in that, described supporting construction is opaque structure.
3. microelectromechanicdisplay display unit according to claim 1, is characterized in that, described side is plane.
4., according to the arbitrary described microelectromechanicdisplay display unit of claim 1-3, it is characterized in that, the angle between described side and described bottom surface is 30 degree ~ 50 degree.
5. a display device, is characterized in that, comprise as arbitrary in claim 1-4 as described in microelectromechanicdisplay display unit.
6. a method for making for microelectromechanicdisplay display unit, is characterized in that, comprising:
Substrate makes the first electrode;
Make supporting construction on the first electrode, described supporting construction comprise with the bottom surface that the first electrode contacts, the end face relative with described bottom surface and with all crossing side of described end face and described bottom surface, described end face is positioned at described bottom surface in the projection of described bottom surface, and described side is ramped shaped;
Described supporting construction makes the second electrode that deformation can occur.
7. the method for making of microelectromechanicdisplay display unit according to claim 6, is characterized in that, makes supporting construction on the first electrode and comprises:
Form supporting layer on the first electrode;
Described supporting layer forms photoresist layer;
Patterned process is carried out to described photoresist layer;
Etch the region exposed in described supporting layer, being 4000-15000 dust m/min at the etch rate of parallel described orientation substrate in the process of described etching, is 6000-11000 dust m/min at the etch rate of vertical described orientation substrate;
Remove remaining photoresist.
8. the method for making of microelectromechanicdisplay display unit according to claim 7, is characterized in that, described supporting layer is opaque material.
9. the method for making of microelectromechanicdisplay display unit according to claim 6, is characterized in that, described supporting construction makes the second electrode that deformation can occur and comprises:
Form sacrifice layer on the first electrode;
Described sacrifice layer and described supporting construction are formed the second electrode that deformation can occur;
Remove described sacrifice layer.
10., according to the method for making of the arbitrary described microelectromechanicdisplay display unit of claim 6-9, it is characterized in that, the angle between described side and described bottom surface is 30 degree ~ 50 degree.
Priority Applications (1)
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CN201410749513.2A CN104460172B (en) | 2014-12-09 | 2014-12-09 | Microelectromechanicdisplay display unit and preparation method thereof, display device |
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CN201410749513.2A CN104460172B (en) | 2014-12-09 | 2014-12-09 | Microelectromechanicdisplay display unit and preparation method thereof, display device |
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CN104460172A true CN104460172A (en) | 2015-03-25 |
CN104460172B CN104460172B (en) | 2017-07-04 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2024000511A1 (en) * | 2022-06-30 | 2024-01-04 | 京东方科技集团股份有限公司 | Display substrate and manufacturing method therefor, and display device |
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US20020000959A1 (en) * | 1998-10-08 | 2002-01-03 | International Business Machines Corporation | Micromechanical displays and fabrication method |
CN1534330A (en) * | 2003-03-28 | 2004-10-06 | 元太科技工业股份有限公司 | Variable colour pixel unit |
CN1560662A (en) * | 2004-03-09 | 2005-01-05 | 元太科技工业股份有限公司 | Microelectromechanical display unit and its manufacturing method |
CN102262322A (en) * | 2010-05-24 | 2011-11-30 | 上海天马微电子有限公司 | Liquid crystal display device and liquid crystal display device substrate |
CN103794634A (en) * | 2014-01-29 | 2014-05-14 | 青岛海信电器股份有限公司 | Light-emitting display back panel, organic light emitting displayer and manufacturing method of light-emitting display back panel and organic light emitting displayer |
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2014
- 2014-12-09 CN CN201410749513.2A patent/CN104460172B/en not_active Expired - Fee Related
Patent Citations (5)
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US20020000959A1 (en) * | 1998-10-08 | 2002-01-03 | International Business Machines Corporation | Micromechanical displays and fabrication method |
CN1534330A (en) * | 2003-03-28 | 2004-10-06 | 元太科技工业股份有限公司 | Variable colour pixel unit |
CN1560662A (en) * | 2004-03-09 | 2005-01-05 | 元太科技工业股份有限公司 | Microelectromechanical display unit and its manufacturing method |
CN102262322A (en) * | 2010-05-24 | 2011-11-30 | 上海天马微电子有限公司 | Liquid crystal display device and liquid crystal display device substrate |
CN103794634A (en) * | 2014-01-29 | 2014-05-14 | 青岛海信电器股份有限公司 | Light-emitting display back panel, organic light emitting displayer and manufacturing method of light-emitting display back panel and organic light emitting displayer |
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WO2024000511A1 (en) * | 2022-06-30 | 2024-01-04 | 京东方科技集团股份有限公司 | Display substrate and manufacturing method therefor, and display device |
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