CN104459594A - Measuring device and method for complex frequency characteristics of high-frequency microwave probe - Google Patents
Measuring device and method for complex frequency characteristics of high-frequency microwave probe Download PDFInfo
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- CN104459594A CN104459594A CN201410771746.2A CN201410771746A CN104459594A CN 104459594 A CN104459594 A CN 104459594A CN 201410771746 A CN201410771746 A CN 201410771746A CN 104459594 A CN104459594 A CN 104459594A
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Abstract
The invention discloses a measuring device and method for complex frequency characteristics of a high-frequency microwave probe. The device comprises a femtosecond laser source, a beam splitter, an optical delay line, a chopper, a direct-current voltage source, a low temperature GaAs photoconductive switch, an electro-optic sampling probe, a short circuiter, a Wollaston prism, balanced photoelectric detector, a lock-in amplifier, a signal generator and a data acquisition and processing unit. Due to the technical scheme, the complex frequency characteristics of the high-frequency microwave probe can be obtained, measurement accuracy is high, and the problem that according to an existing measuring technology, the transmission characteristic of the high-frequency microwave probe cannot be accurately measured.
Description
Technical field
The present invention relates to a kind of measurement mechanism and method of multifrequency characteristic.More specifically, a kind of measurement mechanism and method of high-frequency microwave probe multifrequency characteristic is related to.
Background technology
Microwave probe is the important tool of coplanar type SIC (semiconductor integrated circuit) On-wafer measurements, use microwave probe On-wafer measurements technology, can before semi-conductor chip segmentation with encapsulation, chip directly measures the high frequency characteristics of integrated circuit or device, thus realizing in sheet screening, the use of microwave probe is for improving the microwave packaging of shell and determining that the working model of circuit or device all has great importance.When using microwave probe to test, the actual multifrequency characteristic containing microwave probe self of the data obtained, therefore, obtain the actual parameter of device under test, must remove the impact of microwave probe, namely calibrate microwave probe.At present, the calibration steps of microwave probe is mainly based on the calibration steps of vector network analyzer, these methods all need multiple calibrating element and very strict to calibrating element parameter request, and the exact matching of the parameter of calibrating element own is very un-come-at-able, therefore uses vector network analyzer to calibrate microwave probe and still there is larger error.
Therefore, need measurement mechanism and method that a kind of high-frequency microwave probe multifrequency characteristic is provided, can realize accurately measuring the directly perceived of high-frequency microwave probe multifrequency characteristic.
Summary of the invention
The object of the invention is to the measurement mechanism and the method that improve a kind of high-frequency microwave probe multifrequency characteristic, solve the high-frequency microwave probe measurement problem that prior art cannot realize, realize the directly perceived of high-frequency microwave probe multifrequency characteristic and accurately measure.
For achieving the above object, the present invention adopts following technical proposals:
A measurement mechanism for high-frequency microwave probe multifrequency characteristic, this device comprises
Femtosecond laser source, for Output of laser to beam splitter;
Beam splitter, for laser being divided into pump light and sampling light, and is sent to chopper and optical delay line respectively;
Chopper, for modulating pump light, is sent to CT GaAs optoelectronic switch gap place, produces terahertz pulse signal for encouraging CT GaAs photoconductive switch;
Optical delay line, for changing sampling light and the relative delay of pump light, is sent to electro-optic sampling probe;
Direct voltage source, for providing DC offset voltage for CT GaAs photoconductive switch;
CT GaAs photoconductive switch, for generation of terahertz pulse signal, is sent to high-frequency microwave probe to be measured;
Short-circuiting device, for short circuit high-frequency microwave probe to be measured, and returns the terahertz pulse signal reflex from high-frequency microwave probe to be measured to high-frequency microwave probe to be measured;
Electro-optic sampling is popped one's head in, and for passing through sampling photodetection terahertz pulse signal, and the sampling light of detection terahertz pulse signal is sent to wollaston prism;
Wollaston prism, for sampling light is divided into o light and e light, and is sent to balance photodetector;
Balance photodetection, balances photodetector two detection windows for o light and e light being irradiated respectively to enter, and output signal is sent to lock-in amplifier;
Signal generator, for generation of the driving modulation signal of chopper and the reference signal of lock-in amplifier, and is sent to chopper and lock-in amplifier;
Lock-in amplifier, carries out lock-in amplify detection for Received signal strength, and signal is sent to data acquisition and processing unit;
Data acquisition and processing unit, output signal for gathering and carry out the measurements and calculations of signal waveform.
Preferably, described femtosecond laser source is titanium-doped sapphire mode-locked laser, Output of laser wavelength 780nm, pulse width 80fs, signal repetition frequency 80MHz.
Preferably, described optical delay line, length is 250mm.
Preferably, the pulse signal modulation frequency that described signal generator exports is 1.5KHz.
Preferably, described in
Electro-optic sampling probe is 1.5mm with described CT GaAs photoconductive switch clearance distance;
High-frequency microwave probe to be measured and described CT GaAs photoconductive switch clearance distance are 2mm place.
Preferably, described direct voltage source output offset voltage is 10V.
Preferably, described balance photodetection can realize the low noise common mode inhibition output of o light and e light two paths of signals.
For a measuring method for the high-frequency microwave probe multifrequency characteristic of this measurement mechanism, described the method comprises
Described electro-optic sampling probe is moved to apart from 1.5mm place of place, described photoconductive switch gap, under the state not adding high-frequency microwave probe, measures and obtain terahertz pulse signal waveform H (W1);
Described electro-optic sampling probe is moved to apart from 2mm place of place, described photoconductive switch gap, under the state not adding high-frequency microwave probe, measures and obtain terahertz pulse signal waveform H (W2);
Described electro-optic sampling probe is moved to 1.5mm place, distance low-temperature gallium arsenide photoconductive switch gap, coaxial for high-frequency microwave probe termination is entered short-circuiting device, coplanar side pressure, in 2mm place, distance low-temperature gallium arsenide photoconductive switch gap, is measured and is obtained terahertz pulse signal waveform H (W3);
The multifrequency characteristic S of described CT GaAs photoconductive switch is calculated according to gained terahertz pulse signal waveform H (W1), H (W2)
cPW;
According to the multifrequency characteristic S of gained terahertz pulse signal waveform H (W1), H (W3) and described CT GaAs photoconductive switch
cPWcalculate the multifrequency characteristic H of described high-frequency microwave probe
probe;
The multifrequency characteristic S of described CT GaAs photoconductive switch
cPWcomputing formula is: S
cPW=H (W2)/H (W1);
The multifrequency characteristic H of described high-frequency microwave probe
probe, computing formula is:
Beneficial effect of the present invention is as follows:
Technical scheme of the present invention has following beneficial effect:
1, the present invention adopts the mode of pumping-detection to realize the multifrequency feature measurement of high-frequency microwave probe, solves the measurement problem of the high-frequency microwave multifrequency characteristic that conventional vector network analyzer mensuration cannot realize;
2, the present invention adopts CT GaAs photoconductive switch as terahertz pulse signal source, the terahertz pulse signal of ultra broadband can be produced, its bandwidth can reach more than 0.1THz, can measure the multifrequency characteristic in the corresponding ultra wide band range of high-frequency microwave probe to be measured;
3, apparatus of the present invention adopt Electro-optic sampling detection terahertz pulse signal, can realize signal to noise ratio (S/N ratio) high, shake little, without intrusive mood measurement and there is high measuring accuracy.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail.
Fig. 1 illustrates the measurement mechanism structural drawing of a kind of high-frequency microwave probe multifrequency characteristic in the embodiment of the present invention;
Fig. 2 illustrates the measuring method process flow diagram of a kind of high-frequency microwave probe multifrequency characteristic in the embodiment of the present invention.
Embodiment
In order to be illustrated more clearly in the present invention, below in conjunction with preferred embodiments and drawings, the present invention is described further.Parts similar in accompanying drawing represent with identical Reference numeral.It will be appreciated by those skilled in the art that specifically described content is illustrative and nonrestrictive, should not limit the scope of the invention with this below.
As shown in Figure 1, the invention discloses a kind of measurement mechanism of high-frequency microwave probe multifrequency characteristic, this device comprises femtosecond laser source 1, beam splitter 2, optical delay line 3, chopper 4, direct voltage source 5, CT GaAs photoconductive switch 6, electro-optic sampling probe 7, short-circuiting device 9, wollaston prism 10, balance photodetector 11, lock-in amplifier 12, signal generator 13, data acquisition and treating apparatus 14.
On signal electrode one end that the positive and negative electrode of direct voltage source 5 is connected to CT GaAs photoconductive switch 6 and ground electrode, the laser beam that femtosecond laser source 1 exports is divided into pump light and sampling light through beam splitter 2, pump light focuses on CT GaAs photoconductive switch 6 gap and produces terahertz pulse after chopper 4 is modulated, sampling light is through optical delay line 3, be radiated on balance photodetector 11 two windows after electro-optic sampling probe 7 and wollaston prism 10 and realize sample of signal, the output of balance photodetector 11 is connected to the signal input part of lock-in amplifier 12.Signal generator 13 outputs signal and is input to chopper 4 and lock-in amplifier 12 reference input respectively, and the output signal of lock-in amplifier 12 is input to data acquisition and treating apparatus 14.
Femtosecond laser source 1, for exporting femtosecond laser beam to beam splitter 2;
Beam splitter 2, for laser beam being divided into the pump light of excitation terahertz pulse signal and detecting the sampling light of terahertz pulse signal, two-beam exports chopper 4 and optical delay line 3 respectively to;
Chopper 4, for modulating the pump light from beam splitter, the pump light after modulation is output to CT GaAs photoconductive switch 6 gap place;
Optical delay line 3, for changing sampling light and the relative delay of pump light, realizes detecting the synchronized sampling of terahertz pulse signal, and delayed sampling light is output to electro-optic sampling probe 7;
Direct voltage source 5, for providing DC offset voltage for CT GaAs photoconductive switch 6 produces terahertz pulse signal;
CT GaAs photoconductive switch 6, produces terahertz pulse signal based on described pump light after modulation, and this terahertz pulse signal is sent to high-frequency microwave probe 8 to be measured;
Short-circuiting device 9, for by coaxial for high-frequency microwave probe 8 to be measured terminal shortcircuit, and returns the terahertz pulse signal reflex from high-frequency microwave probe 8 to be measured to high-frequency microwave probe to be measured;
Electro-optic sampling probe 7, being set to can relatively described CT GaAs photoconductive switch 6 and high-frequency microwave probe 8 to be measured translation, for being visited the signal of 8 from high-frequency microwave to be measured by sampling photodetection;
Wollaston prism 10, is divided into o light and e light for exporting light from described electro-optic sampling probe 7;
Balance photodetector 11, for being received o light from described wollaston prism 10 and e light respectively by two detection windows, is realized low noise common mode inhibition signal and exports;
Signal generator 13, for generation of the driving modulation signal of the chopper 4 and reference signal of lock-in amplifier 12, realizes providing reference signal to the control of chopper 4 and for lock-in amplifier 12, and signal is sent to respectively chopper 4 and lock-in amplifier 12;
Lock-in amplifier 12, for carrying out lock-in amplify detection to the signal carrying out self-equilibrating photodetector device 11;
Data acquisition and treating apparatus 14, carry out waveform measurement to the signal from described lock-in amplifier 13, processes the multifrequency characteristic that the data waveform collected calculates high ripple microwave probe 8 to be measured.
Femtosecond laser source 1 is titanium-doped sapphire mode-locked laser, Output of laser wavelength 780nm, pulse width 80fs, signal repetition frequency 80MHz.
Optical delay line 3, length is 250mm.
The bias voltage that direct voltage source 5 exports is 10V.
CT GaAs photoconductive switch 6 has coplanar waveguide structure.
Electro-optic sampling probe 7 is 1.5mm with CT GaAs photoconductive switch 6 clearance distance, and coplanar end and CT GaAs photoconductive switch 6 clearance distance of high-frequency microwave probe 8 to be measured are 2mm.
Signal generator 13, the pulse signal modulation frequency of output is 1.5KHz.
Data acquisition and treating apparatus 14, based on the multifrequency characteristic H of high-frequency microwave probe described in following formulae discovery
probe
In formula, H (W1), for described electro-optic sampling probe is apart from 1.5mm place of place, described photoconductive switch gap, under the state not adding high-frequency microwave probe, measures and obtains terahertz pulse signal waveform;
H (W2), for described electro-optic sampling probe is apart from 2mm place of place, described photoconductive switch gap, under the state not adding high-frequency microwave probe, measures and obtains terahertz pulse signal waveform;
H (W3) is for described electro-optic sampling probe is at 1.5mm place, distance low-temperature gallium arsenide photoconductive switch gap, the high-frequency microwave probe of coplanar side pressure in the coaxial terminal shortcircuit in 2mm place, distance low-temperature gallium arsenide photoconductive switch gap is measured, the terahertz pulse signal to be measured obtained
S
cPWfor the multifrequency characteristic of described CT GaAs photoconductive switch, computing formula is: S
cPW=H (W2)/H (W1).
As shown in Figure 2, a kind of measuring method of the high-frequency microwave probe multifrequency characteristic for above-mentioned measurement mechanism, the method is by the CT GaAs photoconductive switch of femtosecond laser source forcing coplanar waveguide structure, the terahertz pulse produced is by coplanar waveguide transmission line and the high-frequency microwave probe to be measured being connected short circuit load, adopt time domain electro-optic sampling measuring method to obtain sampling the polarization state that in light, o light is different with e light, record terahertz pulse signal waveform and then obtain the multifrequency characteristic of high-frequency microwave probe to be measured.The method concrete steps comprise:
S1, described electro-optic sampling probe 7, apart from 1.5mm place of place, described CT GaAs photoconductive switch 6 gap, under the state not adding high-frequency microwave probe 8 to be measured, is measured and is obtained terahertz pulse signal waveform H (W1);
S2, described electro-optic sampling probe 7, apart from 2mm place of place, described CT GaAs photoconductive switch 6 gap, under the state not adding high-frequency microwave probe 8 to be measured, is measured and is obtained terahertz pulse signal waveform H (W2);
S3, described electro-optic sampling probe 7 is at 1.5mm place, distance low-temperature gallium arsenide photoconductive switch 6 gap, the to be measured high-frequency microwave probe 8 of coplanar side pressure in the coaxial terminal shortcircuit in 2mm place, distance low-temperature gallium arsenide photoconductive switch 6 gap is measured, obtains terahertz pulse signal waveform H (W3);
S4, calculate the multifrequency characteristic S of described CT GaAs photoconductive switch according to gained terahertz pulse signal waveform H (W1), H (W2)
cPW, S
cPWcomputing formula be S
cPW=H (W2)/H (W1);
S5, multifrequency characteristic S according to gained terahertz pulse signal waveform H (W1), H (W3) and described CT GaAs photoconductive switch 6
cPWcalculate the multifrequency characteristic H of described high-frequency microwave probe 8 to be measured
probe, H
probecomputing formula be:
In sum, technical scheme of the present invention, adopts the mode of pumping-detection to realize the multifrequency feature measurement of high-frequency microwave probe, solves the measurement problem of the high-frequency microwave multifrequency characteristic that conventional vector network analyzer mensuration cannot realize; Adopt CT GaAs photoconductive switch as terahertz pulse signal source, can produce the terahertz pulse signal of ultra broadband, its bandwidth can reach more than 0.1THz, can measure the multifrequency characteristic in the corresponding ultra wide band range of high-frequency microwave probe to be measured; Measurement mechanism of the present invention adopts Electro-optic sampling detection terahertz pulse signal, can realize signal to noise ratio (S/N ratio) high, shake little, without intrusive mood measurement and there is high measuring accuracy.
Obviously; the above embodiment of the present invention is only for example of the present invention is clearly described; and be not the restriction to embodiments of the present invention; for those of ordinary skill in the field; can also make other changes in different forms on the basis of the above description; here cannot give exhaustive to all embodiments, every belong to technical scheme of the present invention the apparent change of extending out or variation be still in the row of protection scope of the present invention.
Claims (10)
1. a measurement mechanism for high-frequency microwave probe multifrequency characteristic, is characterized in that, this device described comprises
Femtosecond laser source, for Output of laser to beam splitter;
Beam splitter, for being divided into pump light and sampling light by laser;
Chopper, for modulating the pump light from beam splitter, modulated pump light is output to CT GaAs optoelectronic switch gap place;
Optical delay line, for changing the relative delay of sampling light and pump light, delayed sampling light is output to electro-optic sampling and pops one's head in;
Direct voltage source, for providing DC offset voltage for CT GaAs photoconductive switch;
CT GaAs photoconductive switch, produces terahertz pulse signal based on described modulated pump light, and this terahertz signal is applied to high-frequency microwave probe to be measured;
Short-circuiting device, for by the coaxial terminal shortcircuit of high-frequency microwave probe to be measured;
Electro-optic sampling is popped one's head in, and being set to can relatively described CT GaAs photoconductive switch and microwave probe translation to be measured, for by the signal of sampling photodetection from high-frequency microwave probe to be measured;
Wollaston prism, for being divided into o light and e light by the output of popping one's head in from described electro-optic sampling light;
Balance photodetector, for receiving o light and the e of described wollaston prism respectively by two detection windows;
Signal generator, for generation of the driving modulation signal of chopper and the reference signal of lock-in amplifier;
Lock-in amplifier, for carrying out lock-in amplify detection to the signal carrying out self-equilibrating photodetector device;
Data acquisition and processing unit, process the signal from described lock-in amplifier, obtains the multifrequency characteristic of shown high-frequency microwave probe.
2. measurement mechanism according to claim 1, is characterized in that, described femtosecond laser source is titanium-doped sapphire mode-locked laser, Output of laser wavelength 780nm, pulse width 80fs, signal repetition frequency 80MHz.
3. measurement mechanism according to claim 1, is characterized in that, described optical delay line, and length is 250mm.
4. measurement mechanism according to claim 1, is characterized in that, the pulse signal modulation frequency that described signal generator exports is 1.5KHz.
5. measurement mechanism according to claim 1, is characterized in that, described in
Electro-optic sampling probe is 1.5mm with described CT GaAs photoconductive switch clearance distance;
The coplanar end of high-frequency microwave probe to be measured and described CT GaAs photoconductive switch clearance distance are 2mm place.
6. measurement mechanism according to claim 1, is characterized in that, described direct voltage source output offset voltage is 10V.
7. measurement mechanism according to claim 1, is characterized in that, the low noise common mode inhibition that described balance photodetection can realize o light and e light two paths of signals exports.
8. measurement mechanism according to claim 7, is characterized in that, described data acquisition and processing unit are based on the multifrequency characteristic H of high-frequency microwave probe described in following formulae discovery
probe
Wherein,
H (W1), for described electro-optic sampling probe is apart from 1.5mm place of place, described photoconductive switch gap, under the state not adding high-frequency microwave probe, measures and obtains terahertz pulse signal waveform;
H (W2), for described electro-optic sampling probe is apart from 2mm place of place, described photoconductive switch gap, under the state not adding high-frequency microwave probe, measures and obtains terahertz pulse signal waveform;
H (W3) is for described electro-optic sampling probe is at 1.5mm place, distance low-temperature gallium arsenide photoconductive switch gap, the high-frequency microwave probe of coplanar side pressure in the coaxial terminal shortcircuit in 2mm place, distance low-temperature gallium arsenide photoconductive switch gap is measured, the terahertz pulse signal to be measured obtained
S
cPWfor the multifrequency characteristic of described CT GaAs photoconductive switch, computing formula is:
S
CPW＝H(W2)/H(W1)。
9., for a measuring method for the high-frequency microwave probe multifrequency characteristic of measurement mechanism according to claim 1, it is characterized in that, described the method comprises
Described electro-optic sampling probe, apart from 1.5mm place of place, described photoconductive switch gap, under the state not adding high-frequency microwave probe, is measured and is obtained terahertz pulse signal waveform H (W1);
Described electro-optic sampling probe, apart from 2mm place of place, described photoconductive switch gap, under the state not adding high-frequency microwave probe, is measured and is obtained terahertz pulse signal waveform H (W2);
Described electro-optic sampling probe moves to 1.5mm place, distance low-temperature gallium arsenide photoconductive switch gap, coaxial for high-frequency microwave probe termination is entered short-circuiting device, the high-frequency microwave probe of coplanar side pressure in the coaxial terminal shortcircuit in 2mm place, distance low-temperature gallium arsenide photoconductive switch gap is measured, obtains terahertz pulse signal waveform H (W3) to be measured;
The multifrequency characteristic S of described CT GaAs photoconductive switch is calculated according to gained terahertz pulse signal waveform H (W1), H (W2)
cPW;
According to the multifrequency characteristic S of gained terahertz pulse signal waveform H (W1), H (W3) and described CT GaAs photoconductive switch
cPWcalculate the multifrequency characteristic H of described high-frequency microwave probe
probe.
10. measuring method according to claim 9, is characterized in that, the multifrequency characteristic S of described CT GaAs photoconductive switch
cPWcomputing formula is: S
cPW=H (W2)/H (W1);
The multifrequency characteristic H of described high-frequency microwave probe
probe, computing formula is:
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