CN104451592B - Method for transferring graphene from metal surface to surface of target substrate without damage - Google Patents
Method for transferring graphene from metal surface to surface of target substrate without damage Download PDFInfo
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- CN104451592B CN104451592B CN201410779092.8A CN201410779092A CN104451592B CN 104451592 B CN104451592 B CN 104451592B CN 201410779092 A CN201410779092 A CN 201410779092A CN 104451592 B CN104451592 B CN 104451592B
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 134
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 134
- 239000000758 substrate Substances 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 31
- 239000002184 metal Substances 0.000 title claims abstract description 25
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 25
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims abstract description 72
- 239000004926 polymethyl methacrylate Substances 0.000 claims abstract description 72
- 239000002131 composite material Substances 0.000 claims abstract description 54
- 229920002799 BoPET Polymers 0.000 claims abstract description 51
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 34
- 230000003068 static effect Effects 0.000 claims abstract description 33
- 238000012546 transfer Methods 0.000 claims abstract description 32
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000008367 deionised water Substances 0.000 claims abstract description 14
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 14
- 229910052802 copper Inorganic materials 0.000 claims abstract description 12
- 239000010949 copper Substances 0.000 claims abstract description 12
- 230000005611 electricity Effects 0.000 claims abstract description 7
- 239000002904 solvent Substances 0.000 claims abstract description 4
- 238000005406 washing Methods 0.000 claims abstract 2
- 239000011889 copper foil Substances 0.000 claims description 22
- 230000009881 electrostatic interaction Effects 0.000 claims description 15
- 238000005229 chemical vapour deposition Methods 0.000 claims description 10
- -1 Formic acid glycol ester Chemical class 0.000 claims description 8
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 claims description 8
- 239000004745 nonwoven fabric Substances 0.000 claims description 8
- 229910021578 Iron(III) chloride Inorganic materials 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 6
- 230000007797 corrosion Effects 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 claims description 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 4
- 230000009182 swimming Effects 0.000 claims description 4
- 230000009471 action Effects 0.000 claims description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 2
- 235000019253 formic acid Nutrition 0.000 claims description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 claims 1
- 238000002955 isolation Methods 0.000 claims 1
- 238000004064 recycling Methods 0.000 claims 1
- 238000000108 ultra-filtration Methods 0.000 claims 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 5
- 239000005020 polyethylene terephthalate Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000010410 layer Substances 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 150000001336 alkenes Chemical class 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- FYIBGDKNYYMMAG-UHFFFAOYSA-N ethane-1,2-diol;terephthalic acid Chemical compound OCCO.OC(=O)C1=CC=C(C(O)=O)C=C1 FYIBGDKNYYMMAG-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
- C01B32/186—Preparation by chemical vapour deposition [CVD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Nanotechnology (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The invention discloses a method for transferring graphene from a metal surface to the surface of a target substrate without damage, which comprises the following steps: growing graphene on the surface of the metal copper; coating a PMMA film on the surface of graphene, floating a copper substrate on the surface of an etchant solution, and corroding to remove copper to obtain a PMMA/graphene composite film; enabling the PET film with static electricity by friction to be close to the PMMA/graphene composite film floating on the liquid level, enabling the graphene/PMMA composite film to be adsorbed on the surface of the PET film by utilizing the static electricity, then enabling the PET film to be in contact with deionized water, and simultaneously enabling the static electricity on the surface of the PET film to be released, so that the PMMA/graphene composite film is separated from the PET film and the PET film floats on the water level; repeating the steps, and washing the graphene to completely remove the copper etching solvent attached to the surface of the graphene; and finally transferring the PMMA/graphene composite film to the surface of a target substrate and dissolving and removing PMMA on the surface. By utilizing the method, the positioning transfer of the large-size graphene can be realized, and the damage rate of the graphene can be greatly reduced.
Description
Technical field
The invention belongs to field of material technology, more particularly, to one kind are by Graphene from metal surface to target substrate surface no
The method damaging transfer.
Background technology
2004, Univ Manchester UK professor Geim prepared Graphene first【K.S.Novoselov,
A.K.Geim, S.V.Morozov, D.Jiang, Y.Zhang, S.V.Dubonos, I.V.Grigorieva, A.A.Firsov,
Science 2004,306,666.】.Six side's honeycomb two-dimensional structures that Graphene is made up of individual layer carbon atom.Graphene is thin
Under film room temperature, native electronic mobility is up to 200000cm2/ Vs, has excellent electrical properties【K.I.Bolotin,
K.J.Sikes, Z.Jiang, M.Klima, G.Fudenberg, J.Hone, P.Kim, H.L.Stormer, Solid State
Communications 2008,146,351.】.Additionally, Graphene is respectively provided with high light transmittance in whole visible region, grind
Study carefully the light transmittance finding single-layer graphene close to 97%【R.R.Nair, P.Blake, A.N.Grigorenko,
K.S.Novoselov, T.J.Booth, T.Stauber, N.M.R.Peres, A.K.Geim, Science 2008,320,
1308.】, therefore Graphene has huge application prospect at aspects such as person in electronics, opto-electronics and conductive films.
Realize the large-scale application of Graphene, primary premise is the growth preparation of large-area graphene film.Study
Show to realize individual layer, the growth of High-performance graphene film using chemical vapor deposition (CVD) method on copper-based bottom
【X.S.Li, W.W.Cai, J.H.An, S.Kim, J.Nah, D.X.Yang, R.Piner, A.Velamakanni, I.Jung,
E.Tutuc, S.K.Banerjee, L.Colombo, R.S.Ruoff, Science 2009,324,1312.】.
Up to the present, deeply, restriction Graphene is extensive for the comparison that the growth in metal surface for the Graphene has been studied
How that applies mainly realizes the lossless transfer from metal surface to target substrate surface for the Graphene.In existing transfer method
Direct contact type and non-direct contact type is had Graphene to be carried out and shifts, however, both approaches can cause Graphene
Damaged or a large amount of defects consuming resource.
Therefore, the lossless transfer how efficiently realizing Graphene is the precondition realizing Graphene large-scale application.
Content of the invention
(1) technical problem to be solved
In view of this, present invention is primarily targeted at provide a kind of by Graphene from metal surface to target substrate surface
The method of lossless transfer, to save the resource consumption in transfer process, it is to avoid in transfer process Graphene and transfer apparatus straight
Contact, reduces the damaged degree of Graphene, improves the quality of graphene film.
(2) technical scheme
For reaching above-mentioned purpose, the invention provides Graphene is turned to target substrate surface nondestructive by one kind from metal surface
The method moved, the method includes：
Step 1：Grow Graphene in copper foil surface；
Step 2：The copper foil surface having Graphene in growth coats polymethyl methacrylate (PMMA) as supporting layer, so
Afterwards Copper Foil being swum in ferric chloride aqueous solutionses surface corrosion goes copper removal to obtain PMMA/ graphene composite film；
Step 3：Using the organic film of a surface static electrification, PMMA/ graphene composite film is passed through electrostatic interaction
It is adsorbed in this organic film surface；
Step 4：Deionized water is washed to PMMA/ graphene composite film, to remove graphenic surface attachment
Liquor ferri trichloridi；
Step 5：Reuse the organic film of a surface static electrification, PMMA/ graphene composite film is passed through electrostatic
Effect is adsorbed in this organic film surface, then contacts PMMA/ graphene composite film with target substrate surface, eliminates simultaneously
This organic film surface institute static electrification, realizes PMMA/ graphene composite film to the transfer on target substrate surface；
Step 6：Dissolve, using solvent, the PMMA removing in PMMA/ graphene composite film, realize Graphene from metal watch
The lossless transfer of object-oriented substrate surface.
In such scheme, described in step 1, grow Graphene in copper foil surface, including：Copper Foil is put in CVD stove, leads to
Enter the H of 10SCCM2CH with 2SCCM4, at 1000 DEG C, grow Graphene in copper foil surface.
In such scheme, organic film described in step 3 is for generating static electricity by the rubbing action and have necessarily mechanical strong
Polyethylene terephthalate (PET) film of degree or polytetrafluoroethylene film.
In such scheme, described in step 3, organic film adopts PET film, described in step 3, PMMA/ Graphene is multiple
Close film and organic film surface is adsorbed in by electrostatic interaction, including：A surface using silk friction PET film makes it carry
Electrostatic, then by PET film do not rub not static electrification a surface close to the PMMA/ stone swimming in ferric chloride aqueous solutionses surface
PMMA/ graphene composite film is adsorbed in PET film surface by electrostatic interaction by black alkene laminated film.
In such scheme, deionized water described in step 4 is washed to PMMA/ graphene composite film, to remove
The liquor ferri trichloridi of graphenic surface attachment, including：The PMMA/ graphene composite film being adsorbed in PET film surface is connect
Tactile deionized water, wipes PET film with wet non-woven fabrics quiet to eliminate PET film surface through the rubbed surface of silk simultaneously
Electricity, PMMA/ graphene composite film is transferred to the water surface of deionized water；Then recycle one of silk friction PET film
Surface makes its static electrification, by electrostatic interaction, PMMA/ graphene composite film is adsorbed in PET film surface；It is repeated in many
Secondary, PMMA/ graphene composite film is washed to remove the liquor ferri trichloridi of graphenic surface attachment.
In such scheme, described in step 5, eliminate organic film surface institute static electrification, be to be wiped using wet non-woven fabrics
PET film through the rubbed surface of silk, to eliminate organic film surface institute static electrification.
In such scheme, described target substrate includes glass substrate, quartz substrate and PET film substrate.
(3) beneficial effect
From technique scheme as can be seen that the invention has the advantages that：
1st, the method that Graphene is shifted to target substrate surface nondestructive from metal surface that the present invention provides, ingenious land productivity
With the suction-operated to PMMA for the organic film with electrostatic, not only achieve the efficient transfer of Graphene, and avoid stone
Black alkene and the directly contact of organic film, thus reducing the breakage of Graphene, improve the quality of graphene film after transfer.
2nd, the method shifting Graphene from metal surface to target substrate surface nondestructive that the present invention provides, not only realizes
The efficient transfer of Graphene, saves the resource consumption in transfer process, and avoids in transfer process Graphene and turn
Move the directly contact of apparatus, effectively reduce the damaged degree of Graphene, improve the quality of graphene film.
3rd, the present invention provides the method shifting Graphene from metal surface to target substrate surface nondestructive is it is achieved that copper
Substrate surface CVD Graphene, in the lossless transfer on target substrate surface, not only reduces the resource consumption in transfer process, and
Improve the integrality of graphene film.
Brief description
Fig. 1 is the method shifting Graphene to target substrate surface nondestructive from metal surface according to the embodiment of the present invention
Flow chart.
Fig. 2 is the technique shifting Graphene to target substrate surface nondestructive from metal surface according to the embodiment of the present invention
Flow chart.
Fig. 3 is the schematic diagram of the use electrostatic transfer according to the embodiment of the present invention.
Specific embodiment
For making the object, technical solutions and advantages of the present invention become more apparent, below in conjunction with specific embodiment, and reference
Accompanying drawing, the present invention is described in more detail.
As shown in 1, Fig. 1 is to target substrate surface nondestructive according to the embodiment of the present invention by Graphene from metal surface
The method flow diagram of transfer, the method comprises the following steps：
Step 1：Grow Graphene in copper foil surface；
In this step, grow Graphene in copper foil surface, be to put into Copper Foil in CVD stove, be passed through the H of 10SCCM2With
The CH of 2SCCM4, at 1000 DEG C, grow Graphene in copper foil surface.
Step 2：The copper foil surface having Graphene in growth coats polymethyl methacrylate (PMMA) as supporting layer, so
Afterwards Copper Foil being swum in ferric chloride aqueous solutionses surface corrosion goes copper removal to obtain PMMA/ graphene composite film.
Step 3：Using the organic film of a surface static electrification, PMMA/ graphene composite film is passed through electrostatic interaction
It is adsorbed in this organic film surface；
In this step, organic film be can generate static electricity by the rubbing action and have certain mechanical strength poly- to benzene two
Formic acid glycol ester (PET) film or polytetrafluoroethylene film；Taking PET film as a example, PMMA/ graphene composite film is passed through
Electrostatic interaction is adsorbed in organic film surface, is to make its static electrification using a surface of silk friction PET film, then will
PET film do not rub not static electrification a surface close to the PMMA/ Graphene THIN COMPOSITE swimming in ferric chloride aqueous solutionses surface
PMMA/ graphene composite film is adsorbed in PET film surface by electrostatic interaction by film.
Step 4：Deionized water is washed to PMMA/ graphene composite film, to remove graphenic surface attachment
Liquor ferri trichloridi；
In this step, taking PET film as a example, deionized water is washed to PMMA/ graphene composite film, to go
Except the liquor ferri trichloridi of graphenic surface attachment, it is that the PMMA/ graphene composite film being adsorbed in PET film surface is contacted
Deionized water, wipes PET film through the rubbed surface of silk to eliminate PET film surface electrostatic with wet non-woven fabrics simultaneously,
Realize PMMA/ graphene composite film to separate with PET film and make the former float on the water surface of deionized water, and then will
PMMA/ graphene composite film transfers to the water surface of deionized water；Then recycle a surface of silk friction PET film
Make its static electrification, PMMA/ graphene composite film is adsorbed in by PET film surface by electrostatic interaction；It is repeated in repeatedly, right
PMMA/ graphene composite film is washed to remove the liquor ferri trichloridi of graphenic surface attachment.
Make the Electro-static Driven Comb on PET film surface simultaneously, realize PMMA/ graphene composite film and separate simultaneously with PET film
The former is made to float on the water surface
Step 5：Reuse the organic film of a surface static electrification, PMMA/ graphene composite film is passed through electrostatic
Effect is adsorbed in this organic film surface, then contacts PMMA/ graphene composite film with target substrate surface, eliminates simultaneously
This organic film surface institute static electrification, realizes PMMA/ graphene composite film to the transfer on target substrate surface；
In this step, eliminate organic film surface institute static electrification, be to wipe PET film through silk using wet non-woven fabrics
Rubbed surface, to eliminate organic film surface institute static electrification.
Step 6：Dissolve, using solvent, the PMMA removing in PMMA/ graphene composite film, realize Graphene from metal watch
The lossless transfer of object-oriented substrate surface；
Wherein, target substrate includes glass substrate, quartz substrate or PET film substrate.
Embodiment 1：Realize the transfer to glass surface for the copper foil surface CVD Graphene using electrostatic interaction.
Copper Foil is put in CVD stove, in 10sccm hydrogen and 2sccm methane blended atmosphere, in 1000 DEG C of hot conditions
Lower utilization chemical vapor deposition is in copper superficial growth Graphene；Coat PMMA in the copper foil surface that grown Graphene；By Copper Foil
Swim in ferric chloride aqueous solutionses surface corrosion removing metallic copper and obtain PMMA/ graphene composite film；Poly- using silk friction
One surface of ethylene glycol terephthalate (PET) film makes its static electrification, another surface then PET film not rubbed
Close to the PMMA/ graphene composite film swimming on liquor ferri trichloridi, it is made to adsorb in PET film table by electrostatic interaction
Face；By the PMMA/ graphene composite film contact deionized water on PET film surface for the absorption, wiped with wet non-woven fabrics simultaneously
PET eliminates institute's static electrification through the rubbed surface of silk, and PMMA/ graphene composite film is transferred to the water surface；It is repeated in many
Secondary, PMMA/ graphene composite film is washed to remove the liquor ferri trichloridi of graphenic surface attachment；Reuse one
The PET film of individual surface static electrification, makes PMMA/ graphene composite film adsorb on PET film surface, it is connect with glass surface
Touch, wipe PET film with wet non-woven fabrics simultaneously and eliminate institute's static electrification through the rubbed surface of silk, realize PMMA/ Graphene
Laminated film is in the transfer of glass surface；Finally realize Graphene using the PMMA film that acetone solution removes graphenic surface to exist
The transfer of glass surface.
Embodiment 2：Realize the transfer to pet sheet face for the copper foil surface CVD Graphene using electrostatic interaction.
Concrete steps are similar to Example 1, but the last target substrate using is PET film.
Particular embodiments described above, has carried out detailed further to the purpose of the present invention, technical scheme and beneficial effect
Describe in detail bright, be should be understood that the specific embodiment that the foregoing is only the present invention, be not limited to the present invention, all
Within the spirit and principles in the present invention, any modification, equivalent substitution and improvement done etc., should be included in the guarantor of the present invention
Within the scope of shield.
Claims (7)
1. a kind of method shifting Graphene from metal surface to target substrate surface nondestructive is it is characterised in that the method is
By adding PMMA film, directly connecing between isolation Graphene and transfer medium material between Graphene and electrostatic transfer film
Touching, thus effectively prevent breakage in transfer water-washing process for the Graphene, specifically including：
Step 1：Grow Graphene in copper foil surface；
Step 2：The copper foil surface having Graphene in growth coats polymetylmethacrylate as supporting layer, then by copper
Paper tinsel swims in ferric chloride aqueous solutionses surface corrosion and goes copper removal to obtain PMMA/ graphene composite film；
Step 3：Using the organic film of a surface static electrification, PMMA/ graphene composite film is adsorbed by electrostatic interaction
In this organic film surface；
Step 4：Deionized water is washed to PMMA/ graphene composite film, to remove the trichlorine of graphenic surface attachment
Change ferrous solution；
Step 5：Reuse the organic film of a surface static electrification, PMMA/ graphene composite film is passed through electrostatic interaction
It is adsorbed in this organic film surface, then PMMA/ graphene composite film is contacted with target substrate surface, eliminate this has simultaneously
Machine film surface institute static electrification, realizes PMMA/ graphene composite film to the transfer on target substrate surface；
Step 6：Using solvent dissolve remove PMMA/ graphene composite film in PMMA, realize Graphene from metal surface to
The lossless transfer on target substrate surface.
2. the method shifting Graphene from metal surface to target substrate surface nondestructive according to claim 1, it is special
Levy and be, described in step 1, grow Graphene in copper foil surface, including：
Copper Foil is put in chemical vapor deposition stove, is passed through the H of 10SCCM2CH with 2SCCM4, in copper foil surface at 1000 DEG C
Growth Graphene.
3. the method shifting Graphene from metal surface to target substrate surface nondestructive according to claim 1, it is special
Levy and be, organic film described in step 3 be can generate static electricity by the rubbing action and have certain mechanical strength poly- to benzene two
Formic acid glycol ester PET film or polytetrafluoroethylene film.
4. the method shifting Graphene from metal surface to target substrate surface nondestructive according to claim 3, it is special
Levy and be, described in step 3, organic film adopts PET film, described in step 3, PMMA/ graphene composite film is passed through quiet
Electro ultrafiltration is adsorbed in organic film surface, including：
Make its static electrification using a rub surface of PET film of silk, a table of the not static electrification of then PET film not rubbing
Face close to swimming in the PMMA/ graphene composite film on ferric chloride aqueous solutionses surface, by electrostatic interaction by PMMA/ Graphene
Laminated film is adsorbed in PET film surface.
5. the method shifting Graphene from metal surface to target substrate surface nondestructive according to claim 4, it is special
Levy and be, deionized water described in step 4 is washed to PMMA/ graphene composite film, attached to remove graphenic surface
The liquor ferri trichloridi, including：
The PMMA/ graphene composite film being adsorbed in PET film surface is contacted deionized water, is wiped with wet non-woven fabrics simultaneously
PET film, to eliminate PET film surface electrostatic PMMA/ graphene composite film is transferred to through the rubbed surface of silk
The water surface of ionized water；
Then a surface recycling silk friction PET film makes its static electrification, by electrostatic interaction, PMMA/ Graphene is multiple
Close film and be adsorbed in PET film surface；
It is repeated in repeatedly, PMMA/ graphene composite film being washed to remove the ferric trichloride of graphenic surface attachment
Solution.
6. the method shifting Graphene from metal surface to target substrate surface nondestructive according to claim 5, it is special
Levy and be, described in step 5, eliminate organic film surface institute static electrification, be to wipe PET film through silk using wet non-woven fabrics
Rubbed surface, to eliminate organic film surface institute static electrification.
7. the method shifting Graphene from metal surface to target substrate surface nondestructive according to claim 1, it is special
Levy and be, described target substrate includes glass substrate, quartz substrate or PET film substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410779092.8A CN104451592B (en) | 2014-12-15 | 2014-12-15 | Method for transferring graphene from metal surface to surface of target substrate without damage |
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| CN105063571B (en) * | 2015-08-26 | 2018-02-02 | 吉林大学 | The preparation method of three-dimensional grapheme in a kind of stainless steel base |
| CN105819431B (en) * | 2016-03-18 | 2017-12-22 | 无锡格菲电子薄膜科技有限公司 | A kind of transfer method of graphene film |
| CN106129797A (en) * | 2016-08-09 | 2016-11-16 | 广东工业大学 | Based on WS2the ultrashort pulse fiber laser of/Graphene hetero-junctions |
| CN106495138B (en) * | 2016-10-17 | 2018-11-30 | 杭州电子科技大学 | A kind of method of cutting graphite alkene film |
| CN106868472B (en) * | 2017-01-19 | 2019-12-20 | 中国工程物理研究院电子工程研究所 | Growth method of nitride epitaxial wafer and gallium nitride laser |
| CN106744901B (en) * | 2017-01-19 | 2018-10-12 | 京东方科技集团股份有限公司 | A kind of transfer method and substrate of graphene film |
| WO2019100674A1 (en) * | 2017-11-24 | 2019-05-31 | 深圳大学 | Graphene material and sensor for detecting gas component |
| CN110828291A (en) * | 2018-08-13 | 2020-02-21 | 西安电子科技大学 | GaN/AlGaN heterojunction material based on single crystal diamond substrate and preparation method thereof |
| CN109321893B (en) * | 2018-10-16 | 2020-11-27 | 清华大学 | Preparation method of graphene protective film, graphene protective film and use method thereof |
| CN110373714B (en) * | 2019-06-03 | 2020-12-18 | 杭州电子科技大学 | Method for rapidly preparing large-size high-quality single-layer graphene at room temperature |
| CN110304623B (en) * | 2019-06-27 | 2021-03-16 | 西安交通大学 | Method for transferring graphene in large area |
| CN112551516A (en) * | 2019-09-25 | 2021-03-26 | 中国科学院微电子研究所 | Device and method for wet transfer of graphene film |
| CN110545654B (en) * | 2019-10-09 | 2020-09-04 | 南开大学 | Preparation method of efficient and stable ultrathin flexible terahertz shielding material |
| CN110963484A (en) * | 2019-12-23 | 2020-04-07 | 中国科学院长春光学精密机械与物理研究所 | Doping layer-assisted large-area high-quality graphene nondestructive transfer method |
| EP4139128B1 (en) * | 2020-04-20 | 2023-12-27 | EV Group E. Thallner GmbH | Method and device for transferring a transfer layer |
| CN111847437B (en) * | 2020-07-27 | 2022-01-04 | 广东墨睿科技有限公司 | Device and method for transferring graphene to net-carrying copper substrate in batch |
| CN113929091A (en) * | 2021-10-18 | 2022-01-14 | 惠州学院 | Transfer method of two-dimensional film material, composite film and application of composite film |
| CN114497374B (en) * | 2022-01-14 | 2023-02-10 | 北京科技大学 | Method for constructing Van der Waals transistor by transferring metal electrode |
| CN116206948B (en) * | 2023-02-20 | 2024-06-28 | 湖北九峰山实验室 | Method for extending graphene on substrate and prepared graphene epitaxial wafer |
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| CN102351175A (en) * | 2011-11-03 | 2012-02-15 | 东南大学 | High-quality transfer method of graphene prepared by chemical vapor deposition method |
| TWI526559B (en) * | 2012-04-06 | 2016-03-21 | 中央研究院 | Process for forming carbon film or inorganic material film on substrate by physical vapor deposition |
| CN102774118B (en) * | 2012-07-31 | 2015-05-13 | 无锡格菲电子薄膜科技有限公司 | Method for transferring graphene film with static protective film as medium |
| CN102942178A (en) * | 2012-11-22 | 2013-02-27 | 武汉大学 | Compound base of precious metal nanometer array and single layer graphene and preparation method thereof |
| CN104192832B (en) * | 2014-08-14 | 2017-04-05 | 常州二维碳素科技股份有限公司 | A kind of method and the graphene film obtained by the method for transfer Graphene |
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