CN104451246A - Copper alloy material for semiconductor chip of sensor - Google Patents
Copper alloy material for semiconductor chip of sensor Download PDFInfo
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- CN104451246A CN104451246A CN201410643345.9A CN201410643345A CN104451246A CN 104451246 A CN104451246 A CN 104451246A CN 201410643345 A CN201410643345 A CN 201410643345A CN 104451246 A CN104451246 A CN 104451246A
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Abstract
The invention discloses a copper alloy material for a semiconductor chip of a sensor. The copper alloy material mainly comprises copper and also comprises nickel, cadmium, zinc, noble metal elements and rare earth metal elements, wherein nickel accounts for 0.2-0.6wt% of the copper alloy, cadmium accounts for 0.1-0.3wt% of the copper alloy, zinc accounts for 1.1-2.2wt% of the copper alloy, the noble metal elements account for 0.02-0.05wt% of the copper alloy and the rare earth metal elements account for 0.03-0.04wt% of the copper alloy. The copper alloy material disclosed by the invention can have relatively good normal-temperature and high-temperature anti-oxidation effects when being used for encapsulating the semiconductor chip of the sensor; by using the semiconductor chip of the sensor, encapsulated by the copper alloy disclosed by the invention, the thermal expansion coefficient of the semiconductor chip can be reduced, the thermal fatigue reliability can be easily improved, the stripping phenomenon of a bonding interface can be reduced, the thickness of a chemical compound layer between metals can also be reduced, and then the interface reliability is improved.
Description
Technical field
The present invention relates to sensor semiconductor chip Cu alloy material, it is a kind of copper alloy of the semi-conductor chip be applicable in sensor, belongs to field of alloy material.
Background technology
Copper alloy is widely used in trolley part, appliances parts, electric, electronics, optics, piping-member, hot-water heating metalwork or various valves etc.And due to Global warming in recent years, be strongly required small-sized, lightweight and the thin-walled property of goods or component, in the copper alloy that proportion is larger than iron, need to deal with above-mentioned requirements by high strength.
Especially at meteorological machinery, meteorological optics instrument field, higher requirement is had to the weight of instrument, and require higher to the measure of precision of instrument, just need to use high strength and the alloy material of lightweight, a lot of weather station, due to the restriction of region, traffic, can not meet carrying and the installation of heavier instrument, instrument is changed also exists very large difficulty, and this just needs there is higher requirement in the outfit of instrument, the precision of instrument, and require high the work-ing life of instrument.For the material used during instrumentation, especially sensor, and the requirement of the copper alloy of data acquisition chip use is very high, and traditional simple Cu alloy material cannot meet the demands substantially.Traditional copper alloy not only, induction heavy in quality poor sensitivity and can be few by the number of times used, the instrument service requirements of meteorological field can not be met.
It is the structure function material that a class has excellent combination physicals and mechanical property that height leads high-strength copper alloy, is widely used in the industrial circles such as resistance welding, electric power, electronics, machinofacture.
The semi-conductors such as existing transistor, IC, or the assembly such as unicircuit, its electrodes and outer lead are generally that the gold thread made using the gold of high purity 4N system (purity > 99.99mass (quality) %) and other micro-metalss is as the bonding wire be electrically connected, but, due to the price that gold is higher, and the unstable of gold bullion market, when considering cost and Industry risk, use gold to there is certain drawback, be unfavorable for industrial applications and large-scale production.Use copper alloy to substitute gold thread that the gold of higher-priced high purity 4N system (purity > 99.99mass (quality) %) and other micro-metalss make becomes as the bonding wire be electrically connected the direction that insider considers.When using copper alloy, because the thermal expansion coefficient difference of encapsulation resin and wire is excessive, rise along with semi-conductor starts rear temperature, because the volumetric expansion of thermosetting produces external stress to the copper bonding wire forming loop, particularly to the semiconductor subassembly be exposed under harsh thermal cycle conditions, copper bonding wire is easily made to produce the problem of short-term.
Material for the Electrical and Electronic parts as current-carrying part (such as web member, drainage frame, rly. and switch) has good specific conductivity, to suppress to produce joule heating because of current-carrying, require that the high strength of the material used can bear the stress applied to it in the assembling and operational process of the Electrical and Electronic equipment using this material.Material for Electrical and Electronic parts also requires to have splendid flexible processibility, and, in order to ensure the contact reliability between Electrical and Electronic parts, require that the material being used for these parts has splendid proof stress slackness.Especially in recent years, there is tendency that is integrated, microminiaturized and lighting in Electrical and Electronic parts, the performance requriements of broken beautiful material is higher, and the thickness of copper alloy plate is thinning, and intensity and susceptibility require higher.
It is 2010800134044 that contriver obtains the patent No. by retrieval, denomination of invention is highly strong copper alloy patent, component in this copper alloy is zinc 20% ~ 45%, iron 0.3 ~ 1.5%, chromium 0.3 ~ 1.5%, surplus is copper, and this copper alloy inner dispersion has the intermetallic compound particles of iron-chromium sub-group compound particle and Al2Ca, in the described iron of weight standard relative to described chromium containing ratio Fe/Cr for 0.5 ~ 2.Disclose the testing data of tensile strength and disrumpent feelings unit elongation in a particular embodiment, but for the Cu alloy material of this proportioning, can only obtain by using making method disclosed in this patent, for the molding structure of Cu alloy material inside, concrete control cannot be realized, and the resistance to deformation coefficient of this Cu alloy material, and perveance can not reach the requirement in the sensor of meteorological machinery, cannot be applied in the sensor of meteorological machinery, the problem of the weight alleviating meteorological machinery and the sensing sensitivity improving meteorological machinery cannot be solved.
It is 201110228500.7 that contriver also retrieves application number, denomination of invention is a kind of patent of invention of Cu alloy material, the Cu alloy material of this disclosure of the invention, is made up of following raw material by weight percentage: Pb0.641% ~ 0.704%, Si1.23% ~ 1.36%, Mn1.94% ~ 2.32%, Ni1.95% ~ 2.21%, Fe0.093% ~ 0.153%, Sn0.025% ~ 0.048%, Zn35.3% ~ 35.76%, Cu surplus.The Cu alloy material of this invention has high strength, wear-resisting, corrosion-resistant, good, the easy processing of ductility, not easily the advantage such as to pull, and is suitable for manufacturing the core part of high pressure plunger pump as piston shoes and valve plate.But the conductivity of this Cu alloy material is bad, be not suitable for making sensor element, be especially not suitable for the sensor making meteorological field.
Summary of the invention
In order to solve above-mentioned Problems existing, the invention discloses a kind of sensor semiconductor chip Cu alloy material, concrete scheme of the present invention is:
Sensor semiconductor chip Cu alloy material, mainly comprise copper, also comprise nickel, cadmium and zinc, it is characterized in that also comprising several precious metal element and several thulium, described nickel, cadmium, zinc, precious metal element and the thulium weight percent shared by copper alloy is respectively:
Nickel 0.2% ~ 0.6%, cadmium 0.1% ~ 0.3%, zinc 1.1% ~ 2.2%, precious metal element 0.02% ~ 0.05%, thulium 0.03% ~ 0.04%.
One or any kind combination in described precious metal element selected from rhodium, silver or platinum.
Described thulium is selected from the one or any kind combination in praseodymium, neodymium or cerium.
Described precious metal element comprises rhodium, silver and platinum, and rhodium, silver and the platinum part by weight shared by precious metal element is 0.5:0.8:1 ~ 1.5.
Described thulium comprises praseodymium, neodymium and cerium, and praseodymium, neodymium and the cerium part by weight shared by thulium is 1:1:3 ~ 4.
Described nickel, cadmium, zinc, precious metal element and the thulium weight percent shared by copper alloy is respectively:
Nickel 0.3% ~ 0.5%, cadmium 0.15% ~ 0.25%, zinc 1.5% ~ 1.9%, precious metal element 0.03% ~ 0.04%, thulium 0.032% ~ 0.038%.
Described nickel, cadmium, zinc, precious metal element and the thulium weight percent shared by copper alloy is respectively:
Nickel 0.4%, cadmium 0.2%, zinc 1.7%, precious metal element 0.035%, thulium 0.035%.
Beneficial effect of the present invention is:
Cu alloy material disclosed by the invention be used for encapsulated sensor semi-conductor chip time, preferably normal temperature and high-temperature oxidation resistant effect can be had and good weld balling-up and connectivity.
With the sensor semiconductor chip of copper alloy encapsulation of the present invention, in normal temperature dust free chamber, can reach the several months not oxidized, avoid traditional joint copper product in use, surface is easily oxidized, form the oxide film of one deck black, especially in the Application Areas of encapsulated sensor semi-conductor chip, oxide film not only affects chip surface glossiness, also can affect the conductivity of chip, affect sensitivity and the work-ing life of sensor chip, be unfavorable for the application of the meteorological field that requirement is higher.The present invention has good normal temperature and high-temperature oxidation resistance.
With the sensor semiconductor chip of copper alloy encapsulation of the present invention, not only can reduce semi-conductor chip thermal expansivity, help and improve thermal fatigue reliability, reduce outside the phenomenon generation of bonding interface stripping, also can reduce intermetallic compounds layer thickness, and then improve interface reliability.
Embodiment
Below in conjunction with embodiment, illustrate the present invention further.Following embodiment should be understood only be not used in for illustration of the present invention and limit the scope of the invention.
This sensor semiconductor chip Cu alloy material, mainly comprises copper, also comprises nickel, cadmium and zinc, it is characterized in that also comprising several precious metal element and several thulium.
Embodiment 1:
Described nickel, cadmium, zinc, precious metal element and the thulium weight percent shared by copper alloy is respectively:
Nickel 0.2%, cadmium 0.1%, zinc 1.1%, precious metal element 0.02%, thulium 0.03%.
Described precious metal element comprises rhodium, silver and platinum, and rhodium, silver and the platinum part by weight shared by precious metal element is 0.5:0.8:1.
Described thulium comprises praseodymium, neodymium and cerium, and praseodymium, neodymium and the cerium part by weight shared by thulium is 1:1:3.
Embodiment 2:
Described nickel, cadmium, zinc, precious metal element and the thulium weight percent shared by copper alloy is respectively:
Nickel 0.6%, cadmium 0.3%, zinc 2.2%, precious metal element 0.05%, thulium 0.04%.
Described precious metal element comprises rhodium, silver and platinum, and rhodium, silver and the platinum part by weight shared by precious metal element is 0.5:0.8:1.5.
Described thulium comprises praseodymium, neodymium and cerium, and praseodymium, neodymium and the cerium part by weight shared by thulium is 1:1:4.
Embodiment 3:
Described nickel, cadmium, zinc, precious metal element and the thulium weight percent shared by copper alloy is respectively:
Nickel 0.3%, cadmium 0.15%, zinc 1.5%, precious metal element 0.03%, thulium 0.032%.
Described precious metal element comprises rhodium, silver and platinum, and rhodium, silver and the platinum part by weight shared by precious metal element is 0.5:0.8:1.
Described thulium comprises praseodymium, neodymium and cerium, and praseodymium, neodymium and the cerium part by weight shared by thulium is 1:1:3.
Embodiment 4:
Described nickel, cadmium, zinc, precious metal element and the thulium weight percent shared by copper alloy is respectively:
Nickel 0.5%, cadmium 0.25%, zinc 1.9%, precious metal element 0.04%, thulium 0.038%.
Described precious metal element comprises rhodium, silver and platinum, and rhodium, silver and the platinum part by weight shared by precious metal element is 0.5:0.8:1.5.
Described thulium comprises praseodymium, neodymium and cerium, and praseodymium, neodymium and the cerium part by weight shared by thulium is 1:1:4.
Embodiment 5:
Described nickel, cadmium, zinc, precious metal element and the thulium weight percent shared by copper alloy is respectively:
Nickel 0.4%, cadmium 0.2%, zinc 1.7%, precious metal element 0.035%, thulium 0.035%.
Described precious metal element comprises rhodium, silver and platinum, and rhodium, silver and the platinum part by weight shared by precious metal element is 0.5:0.8:1.25.
Described thulium comprises praseodymium, neodymium and cerium, and praseodymium, neodymium and the cerium part by weight shared by thulium is 1:1:3.5.
Be used for respectively by the Cu alloy material of the different components of above-mentioned 5 specific embodiments encapsulating the sensor chip of same thickness, sensor chip selects 9mm, respectively the sensor chip that 5 embodiments are packaged into is used for test experiments,
First experiment is: the dustfree environment respectively sensor chip that 5 embodiments are packaged into being placed in normal temperature, allows it fully contact with air, observes its 30th day oxidized situation;
Second experiment is: the environment respectively sensor chip that 5 embodiments are packaged into being placed in high temperature (selecting 150 DEG C), allows it fully contact with air, observes its 15th day oxidized situation;
3rd experiment is: the coefficient of thermal expansion testing the sensor chip that 5 embodiments are packaged into respectively.
Obtain data as following table:
Technique means disclosed in the present invention program is not limited only to the technique means disclosed in above-mentioned technique means, also comprises the technical scheme be made up of above technical characteristic arbitrary combination.
With above-mentioned according to desirable embodiment of the present invention for enlightenment, by above-mentioned description, relevant staff in the scope not departing from this invention technological thought, can carry out various change and amendment completely.The technical scope of this invention is not limited to the content on specification sheets, must determine its technical scope according to right.
Claims (7)
1. sensor semiconductor chip Cu alloy material, mainly comprise copper, also comprise nickel, cadmium and zinc, it is characterized in that also comprising several precious metal element and several thulium, described nickel, cadmium, zinc, precious metal element and the thulium weight percent shared by copper alloy is respectively:
Nickel 0.2% ~ 0.6%, cadmium 0.1% ~ 0.3%, zinc 1.1% ~ 2.2%, precious metal element 0.02% ~ 0.05%, thulium 0.03% ~ 0.04%.
2. sensor semiconductor chip Cu alloy material according to claim 1, is characterized in that the one or any kind combination in described precious metal element selected from rhodium, silver or platinum.
3. sensor semiconductor chip Cu alloy material according to claim 1, is characterized in that described thulium is selected from the one or any kind combination in praseodymium, neodymium or cerium.
4. sensor semiconductor chip Cu alloy material according to claim 2, is characterized in that described precious metal element comprises rhodium, silver and platinum, and rhodium, silver and the platinum part by weight shared by precious metal element is 0.5:0.8:1 ~ 1.5.
5. sensor semiconductor chip Cu alloy material according to claim 3, is characterized in that described thulium comprises praseodymium, neodymium and cerium, and praseodymium, neodymium and the cerium part by weight shared by thulium is 1:1:3 ~ 4.
6., according to described sensor semiconductor chip Cu alloy material arbitrary in claim 1-5, it is characterized in that the weight percent shared by described nickel, cadmium, zinc, precious metal element and thulium are in copper alloy is respectively:
Nickel 0.3% ~ 0.5%, cadmium 0.15% ~ 0.25%, zinc 1.5% ~ 1.9%, precious metal element 0.03% ~ 0.04%, thulium 0.032% ~ 0.038%.
7., according to described sensor semiconductor chip Cu alloy material arbitrary in claim 1-5, it is characterized in that the weight percent shared by described nickel, cadmium, zinc, precious metal element and thulium are in copper alloy is respectively:
Nickel 0.4%, cadmium 0.2%, zinc 1.7%, precious metal element 0.035%, thulium 0.035%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410643345.9A CN104451246B (en) | 2014-11-13 | Sensor semiconductor chip Cu alloy material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410643345.9A CN104451246B (en) | 2014-11-13 | Sensor semiconductor chip Cu alloy material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104451246A true CN104451246A (en) | 2015-03-25 |
| CN104451246B CN104451246B (en) | 2017-01-04 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1930314A (en) * | 2004-03-12 | 2007-03-14 | 住友金属工业株式会社 | Copper alloy and process for producing the same |
| CN103137237A (en) * | 2011-12-01 | 2013-06-05 | 贺利氏材料科技公司 | 3N copper wires with trace additions for bonding in microelectronics devices |
| CN103137236A (en) * | 2011-12-01 | 2013-06-05 | 贺利氏材料科技公司 | Alloyed 2N copper wires for bonding in microelectronics devices |
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1930314A (en) * | 2004-03-12 | 2007-03-14 | 住友金属工业株式会社 | Copper alloy and process for producing the same |
| CN103137237A (en) * | 2011-12-01 | 2013-06-05 | 贺利氏材料科技公司 | 3N copper wires with trace additions for bonding in microelectronics devices |
| CN103137236A (en) * | 2011-12-01 | 2013-06-05 | 贺利氏材料科技公司 | Alloyed 2N copper wires for bonding in microelectronics devices |
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Effective date of registration: 20171114 Address after: 6 417A room, building No. 1188, west two ring road, Shengze Town, Wujiang District, Jiangsu, Suzhou, 215228 Patentee after: Suzhou hair textile Co., Ltd. Address before: 214135 Jiangsu city of Wuxi province Wuxi City Innovation Building No. 97 Linghu Wuxi national hi tech Industrial Development Zone, road two South Building Room 101 Patentee before: Wuxi NUIST Weather Sensor Network Technology Co., Ltd. |
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Effective date of registration: 20181010 Address after: 215200 No. 1188 west two ring road, Shengze Town, Wujiang District, Suzhou, Jiangsu. Patentee after: Suzhou Shengze science and Technology Pioneer Park Development Co., Ltd. Address before: 215228 417A, 6 building, 1188 west two ring road, Shengze Town, Wujiang District, Suzhou, Jiangsu. Patentee before: Suzhou hair textile Co., Ltd. |