CN104425709B - The forming method of phase transition storage - Google Patents
The forming method of phase transition storage Download PDFInfo
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- CN104425709B CN104425709B CN201310365803.2A CN201310365803A CN104425709B CN 104425709 B CN104425709 B CN 104425709B CN 201310365803 A CN201310365803 A CN 201310365803A CN 104425709 B CN104425709 B CN 104425709B
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Abstract
A kind of forming method of phase transition storage, including：Substrate is provided, the dielectric layer with multiple through holes is formed in substrate；Pad underlayer and electrode layer are formed in the through hole, the pad underlayer is located between through hole and dielectric layer, and covering via bottoms and side wall, the electrode layer, pad underlayer upper surface and dielectric layer upper surface maintain an equal level；The gasket material of the electrode layer surface is removed, the gasket material is the residue when forming pad underlayer；After the gasket material for removing electrode layer surface, the electrode layer and pad underlayer of etched portions thickness, remaining electrode layer are used as hearth electrode.Remove the gasket material for remaining in electrode layer surface so that the electrode layers thickness in each through hole is equal.So, the thickness of each hearth electrode is homogeneous, and the resistance of hearth electrode is equal.When same electric current flows through hearth electrode, then the caloric value of hearth electrode is also equal, it is ensured that each phase-change memory cell energy normal read/write, improves the performance of phase transition storage.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of forming method of phase transition storage.
Background technology
Phase transition storage (Phase Change Random Access Memory, PCRAM) emerging non-is waved as a kind of
Hair property memory technology, phase transition storage is all in read or write speed, read-write number of times, data hold time, cellar area, many-valued realization etc.
It is many-sided that all there is larger superiority to flash memory, it has also become the focus of current non-volatile memory technology research.
In phase transition storage（PCRAM）In, can be by being heat-treated to the phase change layer that have recorded data, and change and deposit
The value of reservoir.Crystalline state or amorphous can be entered by the heating effect of applied electric current by constituting the phase-change material of phase change layer
State.When the phase change layer of a PCRAM memory cell is in crystalline state, the resistance of the memory cell is relatively low, and now this is deposited
Storage unit is entered as " 0 ".When phase change layer is in noncrystalline state, the resistance of the memory cell is higher, and now the memory cell is assigned
It is worth for " 1 ".Therefore, PCRAM is resistance difference when being in crystalline state or noncrystalline state using phase change layer to write/receive data
According to non-volatility memorizer.
Phase change layer and phase change layer electricity that the elementary cell of one phase transition storage includes hearth electrode, electrically connected with hearth electrode
The top electrode of connection, electric current is heated through hearth electrode to phase change layer.It is good to obtain in existing phase transition storage manufacturing process
Heating effect, can reduce the contact area of hearth electrode and phase change layer, contact resistance be improved, so as to obtain bigger heating
Amount.
Hearth electrode forming method in the phase transition storage of prior art includes：
Reference picture 1, forms dielectric layer 11 on the substrate 10, is formed with dielectric layer 11 in multiple through holes 12, Fig. 1 only aobvious
A through hole 12 is shown, has only played example effect, transistor is formed with the substrate 10（It is not shown）, the bottom of through hole 12 is base
The transistor source formed on bottom 10 or drain electrode；
Reference picture 2, the titanium nitride layer 13 on dielectric layer 11, the blanket dielectric layer 11 of titanium nitride layer 13, the bottom of through hole 12
Portion and side wall, form tungsten layer 14, the full through hole 12 of the filling of tungsten layer 14 on titanium nitride layer 13；
Reference picture 3, cmp tungsten layer 14, titanium nitride layer 13 stop, titanium nitride layer 13 to the upper surface of dielectric layer 11
It is used as pad underlayer；
Reference picture 4, is first etched back to the tungsten layer 14 of segment thickness, is then etched back to titanium nitride layer 13, expose portion depth
Tungsten layer 14 in through hole 12, through hole 12 is used as hearth electrode.Afterwards, the through hole of the through-hole side wall formation larger aperture of exposure is etched,
Phase change layer is formed in the larger aperture through hole.
But, including prior art formation hearth electrode phase transition storage performance it is not good.
The content of the invention
The problem of present invention is solved is that the phase transition storage performance of the hearth electrode with prior art formation is not good.
To solve the above problems, the present invention provides a kind of forming method of phase transition storage, the formation of the phase transition storage
Method includes：
Substrate is provided, the dielectric layer with multiple through holes is formed in substrate；
Pad underlayer and electrode layer are formed in the through hole, the pad underlayer is located between through hole and dielectric layer, and covering is logical
Bottom hole portion and side wall, the electrode layer, pad underlayer upper surface and dielectric layer upper surface maintain an equal level；
The gasket material of the electrode layer surface is removed, the gasket material is the residue when forming pad underlayer；
After the gasket material for removing electrode layer surface, the electrode layer and pad underlayer of etched portions thickness, remaining electrode layer are made
For hearth electrode.
Alternatively, the material of the pad underlayer is titanium nitride.
Alternatively, the method for the gasket material of the removal electrode layer surface is：Using chlorine plasma to electrode layer table
Face is handled.
Alternatively, plasmarized formation chlorine plasma is carried out to chlorine；
During being handled using chlorine plasma electrode layer surface, plasmarized radio frequency is carried out to chlorine
The radio frequency power range of generator is 200~1000W, and the bias range of radio-frequency signal generator is 0~500V, the range of flow of chlorine
For 20~200sccm, treatment time scope is 5~30s.
Alternatively, forming the pad underlayer and the method for electrode layer includes：
Gasket material layer, the gasket material layer blanket dielectric layer, the bottom and side of through hole are formed on the dielectric layer
Wall；
Conductive material layer, the full through hole of conductive material layer filling are formed on gasket material layer；
Cmp conductive material layer and gasket material layer, stop to the dielectric layer upper surface, form electricity respectively
Pole layer and pad underlayer.
Alternatively, the method for conductive material layer being formed on gasket material layer is chemical vapor deposition or sputtering technology.
Alternatively, the electrode layer of etched portions thickness and the method for pad underlayer include：
Using the dielectric layer as mask, etched portions thickness electrode layer；
Using the dielectric layer as mask, etched portions thickness pad underlayer, remaining electrode layer and pad underlayer upper surface flush.
Alternatively, the method for the electrode layer of etched portions thickness is dry etching, the quarter used during dry etching
Erosion gas is SF6、NF3In one or more.
Alternatively, before the gasket material of the electrode layer surface is removed, using oxygen plasma to electrode layer surface, pad
Lined surfaces and dielectric layer surface are handled, and remove polishing agent, the polishing agent is in cmp conductive material layer
With the residual polishing agent after gasket material layer.
Alternatively, the material of the electrode layer is tungsten, aluminium or copper.
Alternatively, field-effect transistor is formed with the substrate surface, the bottom of the electrode layer is field effect transistor
The drain electrode of pipe；Or, diode is formed with the substrate surface, the bottom of the electrode layer is the anode of diode.
Alternatively, after the electrode layer and pad underlayer of etched portions thickness, also include：
The dielectric layer of the through-hole side wall on the electrode layer is etched, opening is formed；
Phase change layer is formed in said opening；
The top electrode of electrical connection phase change layer is formed on the phase change layer.
Alternatively, forming the method for phase change layer in said opening includes：
Phase-change material layers, phase-change material layers blanket dielectric layer, filling full gate mouthful are formed on the dielectric layer；
The phase-change material layers for being higher by the dielectric layer upper surface are removed, remaining phase-change material layers are used as phase change layer.
Alternatively, the method for the phase-change material layers for being higher by the dielectric layer upper surface is removed for cmp or is returned quarter
Erosion.
Alternatively, the phase change layer material is Ge-Sb-Te alloy.
Compared with prior art, technical scheme has advantages below：
After electrode layer and pad underlayer is formed, the gasket material for being likely to remain at electrode layer surface is removed so that each leads to
Electrode layers thickness in hole is equal.When etching electrode layer formation hearth electrode, the thickness of each hearth electrode is homogeneous, the electricity of hearth electrode
Resistance is equal.The position of one hearth electrode one phase-change memory cell of correspondence, because the resistance of multiple hearth electrodes is equal, in same electricity
When stream flows through hearth electrode, the caloric value of hearth electrode is also equal, and the conversion condition of the storage state of each phase-change memory cell is identical,
Ensure each phase-change memory cell energy normal read/write, improve the performance of phase transition storage.
Brief description of the drawings
Fig. 1~Fig. 4 is cross-sectional view of the phase transition storage of prior art in forming process；
Fig. 5~Figure 14 is cross-sectional view of the phase transition storage of the specific embodiment of the invention in forming process.
Embodiment
Through researching and analysing, find：Reference picture 3, in chemical mechanical planarization process, grinds away tungsten layer 14, then could first
Titanium nitride layer 13 is ground, after grinding titanium nitride layer 13, the tungsten layer remained on surface of partial nitridation titanium in through-holes is might have.Remove
Titanium nitride residual is outer, is also possible to remain polishing agent in dielectric layer 11 and the surface of tungsten layer 14.So, it is multiple in dielectric layer 11
In through hole, some of which through hole there is tungsten layer surface in titanium nitride residual, some through holes and remained in the absence of titanium nitride in tungsten layer surface.
Those have the tungsten layer that titanium nitride is remained, and the thickness of the titanium nitride of residual may be not quite similar again.With reference to Fig. 4, when carrying out back carving
When losing tungsten layer, titanium nitride layer, because tungsten layer surface has titanium nitride residual in some through holes, what is formed in dielectric layer 11 is multiple
In through hole, the uneven thickness one of tungsten layer, then the resistance of the tungsten layer of uneven thickness one differ.As background technology introduction, each
The position of hearth electrode can correspond to a phase-change memory cell, and a phase transition storage includes multiple phase-change memory cells.Due to many
The resistance of individual hearth electrode is differed, then the caloric value of multiple hearth electrodes has differences, when same heated current flows through hearth electrode,
Crystalline state conversion can occur for the corresponding phase change layer of some hearth electrodes, and the corresponding phase change layer of some hearth electrodes is without tying
Brilliant condition conversion.This may cause some data can not read/write, cause the performance of phase transition storage not good.
The problem of existing for prior art, the present invention proposes a kind of gasket material for removing and remaining in hearth electrode surface
Method.
It is understandable to enable the above objects, features and advantages of the present invention to become apparent, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
There is provided substrate 100 for reference picture 5.
In a particular embodiment, the substrate 100 is silicon substrate, germanium substrate or silicon nitrate substrate etc.；Or can be with
Including other materials, the III-V such as GaAs.Those skilled in the art can be according to shape in substrate 100
Into semiconductor devices select the type of the substrate 100, therefore the type of the substrate should not limit the protection model of the present invention
Enclose.
In a particular embodiment, mutually isolated a plurality of wordline, the choosing electrically connected with wordline are formed with the surface of substrate 100
Siphunculus（It is not shown）.The gate tube of usual phase transition storage can be diode or field-effect transistor.When gate tube is imitated for field
When answering transistor, wordline electrically connects the grid of field-effect transistor, and multiple field-effect transistors are electrically connected with a wordline
Grid, correspondingly, the drain electrode of the field-effect transistor is electrically connected with hearth electrode thereon, and source ground.Wordline and power supply
Line is electrically connected, the field-effect transistor conducting that a wordline control is connected electrically.When gate tube is diode, diode
The two poles of the earth are electrically connected wordline and hearth electrode, the diode current flow that wordline control is connected electrically.
Reference picture 6, forms dielectric layer 101 in substrate 100.In a particular embodiment, the material of dielectric layer 101 is oxidation
Silicon.The method for forming dielectric layer 101 is chemical vapor deposition, and the covering substrate 100 of dielectric layer 101 of formation also covers substrate 100
On other structures, and dielectric layer in substrate 100 is higher than the other structures in substrate 100.
Reference picture 7, patterned media layer 101, forms multiple through holes 102 in dielectric layer 101.Depth of through hole 102 etc.
In the thickness of dielectric layer 101, the bottom of through hole 102 is gate tube.When gate tube is field-effect transistor, the bottom of through hole 102
Portion is drain electrode；When gate tube is diode, the bottom of through hole 102 is the negative electrode of diode.
It should be noted that multiple through holes spaced apart from each other 102 are formed with substrate 100, a correspondence of through hole 102 one
A through hole 102 is only shown in the position of individual phase-change memory cell, Fig. 7, example effect is only played, not constituted to present invention guarantor
Protect the limitation of scope.
In a particular embodiment, forming the method for through hole 102 includes：Patterned photoresist is formed on dielectric layer 101
Layer, patterned photoresist layer defines the position of through hole 102；Using patterned photoresist layer as mask etching dielectric layer 101, shape
Into through hole 102, the etching agent that etch media 101 process of layer are used is buffered oxide etch liquid（Buffer Oxide
Etchant, BOE）；Remove patterned photoresist layer.After patterned photoresist layer is removed, also include：Use grey chemical industry
Skill handles through hole 102, removes through-hole side wall and the polymer of bottom, and the polymer is to remove patterned photoresist layer process
Middle generation.
Pad underlayer and electrode layer are formed in the through hole, pad underlayer is located between through hole and dielectric layer, covers through hole bottom
Portion and side wall, the electrode layer, titanium nitride layer upper surface and dielectric layer upper surface are remained basically stable.
Specifically, forming pad underlayer and the method for electrode layer in through-holes includes：
Reference picture 8, forms gasket material layer 103 on dielectric layer 101,103 blanket dielectric layer 101 of gasket material layer, logical
The bottom in hole and side wall, the material of pad underlayer 113 is titanium nitride, and the method for forming titanium nitride is chemical vapor deposition or physics gas
Mutually deposit, gasket material layer 103 is used to form pad underlayer in subsequent technique, and conductive material layer is formed on gasket material layer 103
104, the full through hole of the filling of conductive material layer 104, the material of conductive material layer 104 is tungsten, forms conductive on gasket material layer 103
The method of material layer 104 is chemical vapor deposition or sputtering technology, and conductive material layer 104 is used for subsequent technique formation electrode layer；
Reference picture 9, cmp conductive material layer and gasket material layer, stop, respectively to the upper surface of dielectric layer 101
It is correspondingly formed electrode layer 114 and pad underlayer 113, the upper surface and the upper surface base of dielectric layer 101 of electrode layer 114 and pad underlayer 113
This maintains an equal level.
In other embodiments, the material of electrode layer can also be tungsten, aluminium or copper.In the present embodiment, conductive material layer
Material selects tungsten, because：The resistivity of tungsten is more than aluminium, the resistivity of copper, and when as electrode layer, the resistance of tungsten is greater than
The resistance of copper, aluminium, is passed through same current in electrode layer, and tungsten can provide more heats.
In a particular embodiment, after cmp conductive material layer and gasket material layer, in the table of electrode layer 114
Face, the surface of pad underlayer 113 and the surface of dielectric layer 101 might have polishing agent residual.Therefore, after using oxygen gas plasma
Oxygen plasma is handled the surface of electrode layer 114, the surface of pad underlayer 113 and the surface of dielectric layer 101, removes the polishing of residual
Agent.In oxygen plasma processing procedure, polishing agent is discharged with oxygen plasma precursor reactant generation volatile materials, so as to reach
Remove the purpose of residual polishing agent.
In a particular embodiment, because conductive material layer is located on gasket material layer, in cmp conductive material
When layer and gasket material layer, conductive material layer is first ground, grinding pad liner material layer is just started during to exposure gasket material layer.
During being somebody's turn to do, reference picture 9, the surface of electrode layer 114 of some through holes of correspondence can produce gasket material residual, inevitably, pad
The surface of lining 113 can also have part gasket material.
So, reference picture 10 uses chlorine（Cl2）Chlorine plasma after plasmarized enters to the surface of electrode layer 114
Row processing, removes the gasket material on the surface of electrode layer 114.As in the previous paragraph, the surface of pad underlayer 113 can also have part pad material
Material, in the process, chlorine plasma can also remove the gasket material on the surface of pad underlayer 113.
In a particular embodiment, journey is treated to electrode layer surface using chlorine plasma, produces chlorine plasma
When the radio-frequency signal generator that uses（RF）Radio frequency power range be 200~1000W（Including end points）, the bias model of radio-frequency signal generator
Enclose for 0~500V（Including end points）, the range of flow of chlorine is 20~200sccm（Including end points）, treatment time scope be 5~
30s（Including end points）.
It should be noted that reference picture 10, is all to remove nitridation when handling electrode layer surface using chlorine plasma
Titanium residue, can produce processing to electrode layer and titanium nitride layer, this cross processing eliminate via top segment electrode layer and
Titanium nitride layer, forms one small opening, and this will not produce influence to subsequent technique, also without limitation on protection scope of the present invention.
Remaining electrode layer is used as hearth electrode 124, a bottom in reference picture 11, the electrode layer of etched portions thickness, through hole 102
The position of one phase-change memory cell of correspondence of electrode 124；Reference picture 12, after etched portions thickness electrode layer, etches same uniform thickness
Remained basically stable with the upper surface of hearth electrode 124 pad underlayer 113 of degree, the upper surface of pad underlayer 113.
In a particular embodiment, the method for the electrode layer of etched portions thickness is dry etching, during dry etching
The etching gas used are SF6、NF3In one or more.In etching process, the plasma bombardment electrode of etching gas
Layer, and fluorine-based escaping gas is generated with electrode layer material reaction, fluorine-based escaping gas is discharged chamber.
The dielectric layer of through-hole side wall on reference picture 13, etching hearth electrode 124, forms opening 112, the opening 112
The upper surface of bottom-exposed hearth electrode 124.
Reference picture 14, forms phase change layer 103 in said opening.
In a particular embodiment, forming the method for phase change layer 103 includes：Phase-change material layers, phase are formed on dielectric layer 101
Change material layer blanket dielectric layer 101, filling full gate mouthful；Remove the phase-change material layers for being higher by the upper surface of dielectric layer 101, remaining phase
Change material layer is used as phase change layer 103.The method for removing the phase-change material layers for being higher by the upper surface of dielectric layer 101 is cmp
Or be etched back to.
In a particular embodiment, the material of phase change layer 103 is Ge-Sb-Te alloy（GeSbTe, is abbreviated as GST）, due to
GST is larger in the resisitivity of amorphous and crystalline state, about differs three orders of magnitude so that is easier to recognize and determines current
The state of memory.
Then, the top electrode of electrical connection phase change layer is formed on phase change layer, the other end of top electrode and phase transition storage
Bit line is electrically connected.
Using the method for the technical scheme formation phase transition storage of the present embodiment, after electrode layer and pad underlayer is formed, go
Except the gasket material for being likely to remain at electrode layer surface so that the electrode layers thickness in each through hole is equal.In etching electrode layer
When forming hearth electrode, the thickness of each hearth electrode is homogeneous, and the resistance of hearth electrode is equal.One hearth electrode one phase change memory of correspondence
The position of unit, because the resistance of multiple hearth electrodes is equal, when same electric current flows through hearth electrode, the caloric value of hearth electrode also phase
Deng the conversion condition of the storage state of each phase-change memory cell is identical, it is ensured that each phase-change memory cell can normally read/
Write, improve the performance of phase transition storage.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art, are not departing from this
In the spirit and scope of invention, it can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
The scope of restriction is defined.
Claims (15)
1. a kind of forming method of phase transition storage, it is characterised in that including：
Substrate is provided, the dielectric layer with multiple through holes is formed in substrate；
Pad underlayer and electrode layer are formed in the through hole, the pad underlayer is located between through hole and dielectric layer, covers through hole bottom
Portion and side wall, the electrode layer, pad underlayer upper surface and dielectric layer upper surface maintain an equal level；
The gasket material of the electrode layer surface is removed, the gasket material is the residue when forming pad underlayer；
After the gasket material for removing electrode layer surface, the electrode layer and pad underlayer of etched portions thickness, remaining electrode layer are used as bottom
Electrode.
2. forming method as claimed in claim 1, it is characterised in that the material of the pad underlayer is titanium nitride.
3. forming method as claimed in claim 2, it is characterised in that the method for removing the gasket material of the electrode layer surface
For：Electrode layer surface is handled using chlorine plasma.
4. forming method as claimed in claim 3, it is characterised in that plasmarized formation chlorine plasma is carried out to chlorine
Body；
During being handled using chlorine plasma electrode layer surface, plasmarized radio frequency is carried out to chlorine and occurred
The radio frequency power range of device is 200~1000W, and the bias range of radio-frequency signal generator is 0~500V, and the range of flow of chlorine is 20
~200sccm, treatment time scope is 5~30s.
5. forming method as claimed in claim 1, it is characterised in that forming the method for pad underlayer and electrode layer includes：
Gasket material layer, the gasket material layer blanket dielectric layer, the bottom of through hole and side wall are formed on the dielectric layer；
Conductive material layer, the full through hole of conductive material layer filling are formed on gasket material layer；
Cmp conductive material layer and gasket material layer, stop to the dielectric layer upper surface, form electrode layer respectively
And pad underlayer.
6. forming method as claimed in claim 5, it is characterised in that the method that conductive material layer is formed on gasket material layer
For chemical vapor deposition or sputtering technology.
7. forming method as claimed in claim 1, it is characterised in that the electrode layer of etched portions thickness and the method for pad underlayer
Including：
Using the dielectric layer as mask, etched portions thickness electrode layer；
Using the dielectric layer as mask, etched portions thickness pad underlayer, remaining electrode layer and pad underlayer upper surface flush.
8. forming method as claimed in claim 1, it is characterised in that the method for the electrode layer of etched portions thickness is carved for dry method
Erosion, the etching gas used during dry etching are SF6、NF3In one or more.
9. forming method as claimed in claim 5, it is characterised in that before the gasket material of the electrode layer surface is removed,
Electrode layer surface, pad layer surface and dielectric layer surface are handled using oxygen plasma, polishing agent, the polishing is removed
Agent is the residual polishing agent after cmp conductive material layer and gasket material layer.
10. forming method as claimed in claim 1, it is characterised in that the material of the electrode layer is tungsten, aluminium or copper.
11. forming method as claimed in claim 1, it is characterised in that be formed with field-effect transistor in the substrate surface,
The bottom of the electrode layer is the drain electrode of field-effect transistor；Or, it is formed with diode, the electrode in the substrate surface
The bottom of layer is the anode of diode.
12. forming method as claimed in claim 1, it is characterised in that after the electrode layer and pad underlayer of etched portions thickness,
Also include：
The dielectric layer of the through-hole side wall on the electrode layer is etched, opening is formed；
Phase change layer is formed in said opening；
The top electrode of electrical connection phase change layer is formed on the phase change layer.
13. forming method as claimed in claim 12, it is characterised in that form the method bag of phase change layer in said opening
Include：
Phase-change material layers, phase-change material layers blanket dielectric layer, filling full gate mouthful are formed on the dielectric layer；
The phase-change material layers for being higher by the dielectric layer upper surface are removed, remaining phase-change material layers are used as phase change layer.
14. forming method as claimed in claim 13, it is characterised in that remove the phase transformation material for being higher by the dielectric layer upper surface
The method of the bed of material is cmp or is etched back to.
15. forming method as claimed in claim 12, it is characterised in that the phase change layer material is Ge-Sb-Te alloy.
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| US11411180B2 (en) | 2020-04-28 | 2022-08-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Phase-change memory device and method |
| CN113517393A (en) * | 2020-04-28 | 2021-10-19 | 台湾积体电路制造股份有限公司 | Phase change memory device and method of forming the same |
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| US6649928B2 (en) * | 2000-12-13 | 2003-11-18 | Intel Corporation | Method to selectively remove one side of a conductive bottom electrode of a phase-change memory cell and structure obtained thereby |
| CN101677080A (en) * | 2007-09-14 | 2010-03-24 | 旺宏电子股份有限公司 | Memory cell array manufacture method and memory device |
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| US6649928B2 (en) * | 2000-12-13 | 2003-11-18 | Intel Corporation | Method to selectively remove one side of a conductive bottom electrode of a phase-change memory cell and structure obtained thereby |
| CN101677080A (en) * | 2007-09-14 | 2010-03-24 | 旺宏电子股份有限公司 | Memory cell array manufacture method and memory device |
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