CN104423172A - Detection method for scattering bar simulation printing - Google Patents
Detection method for scattering bar simulation printing Download PDFInfo
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- CN104423172A CN104423172A CN201310378941.4A CN201310378941A CN104423172A CN 104423172 A CN104423172 A CN 104423172A CN 201310378941 A CN201310378941 A CN 201310378941A CN 104423172 A CN104423172 A CN 104423172A
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Abstract
The invention provides a detection method for scattering bar (sbar) simulation printing. The method comprises the following steps: step (a) preparing a mask OPC (Optical Proximity Correction) model which comprises a main pattern and a scattering bar pattern; step (b) adjusting a focus image plane at the middle part of a photoresist in the mask OPC model to an image plane at the top of the photoresist, so as to form a scattering bar OPC model; and step (c) performing simulation exposure to performing simulation printing on the scattering bar contour, and performing corresponding detection. Actual printing detection is performed on sbar through the simulation method, and the method is capable of relatively efficiently accurately detecting sbar printing.
Description
Technical field
The present invention relates to semiconductor applications, particularly, the present invention relates to a kind of detection method of scattering strip analog imaging.
Background technology
Ic manufacturing technology is a complicated technique, and technology innovation is very fast.The key parameter characterizing ic manufacturing technology is minimum feature size, i.e. critical size (critical dimension, CD), along with reducing of critical size, even be contracted to nanoscale, and just make each chip to be arranged 1,000,000 devices just because of the reduction of critical size and become possibility.
Photoetching technique is the driving force of integrated circuit fabrication process development, is also one of technology of complexity the most.Relatively and other single manufacturing technology, the development of raising to integrated circuit of photoetching technique is significant.Before photoetching process starts, first need pattern to copy on mask plate by particular device, then by the light of lithographic equipment generation specific wavelength, the patterning on mask plate is copied on the silicon chip of production chip.But due to reducing of dimensions of semiconductor devices, can distortion phenomenon there is by design transfer to the process of silicon chip, if do not eliminate the failure that this distortion phenomenon can cause whole manufacturing technology.Therefore, optics can be carried out to described mask plate close on correction (Optical ProximityCorrection to solve described problem, OPC), described OPC method is carries out pre-service before photoetching to described lithography mask version, revise in advance, the amount that amendment is compensated just in time can compensate the optical proximity effect that exposure system causes.
In order to increase the contrast of pattern in OPC process, usually on mask plate, form target pattern and scattering strip (scattering bar, sbar), wherein said sbar is surrounding's figure target pattern being produced to optical approach effect, be not formed at after exposure on described wafer, described sbar such as selects various rectangular, square frame etc.Usually in the middle part of photoresist layer, the data that the plane of delineation (image plane) collects wafer are chosen in prior art, thus the OPC model (model) of target pattern (main pattern) is calibrated, then utilize the model after this calibration to carry out exposure simulation to target pattern (main pattern) under normal circumstances, and in overexposure situation, described sbar is simulated.But because described sbar has less size, light intensity (light intensity) in its photoresist layer is far smaller than the light intensity (light intensity) of described target pattern (main pattern), described sbar mostly only images in the top of described photoresist layer, and the plane of delineation of the OPC template of routine (image plane) is positioned at the middle part of described photoresist layer, scattering strip imaging (sbar printing) can not be detected very accurately, thus probably described sbar is formed on described wafer, cause component failure, product yield is caused to reduce.
Therefore, although there is the plane picture that OPC model and the sbar of described main graphic are carried out to data acquisition and simulate in prior art, but described plane picture is positioned at the middle part of described photoresist layer, although main graphic (main pattern) can be simulated well, but due to sbar, there is little size and image in photoresist upper strata, can not simulate very accurately described sbar, so need to improve current method, to eliminate the problems referred to above.
Summary of the invention
In summary of the invention part, introduce the concept of a series of reduced form, this will further describe in embodiment part.Summary of the invention part of the present invention does not also mean that the key feature and essential features that will attempt to limit technical scheme required for protection, does not more mean that the protection domain attempting to determine technical scheme required for protection.
The invention provides a kind of detection method of scattering strip analog imaging, said method comprising the steps of:
Step (a) prepares mask plate OPC model, and described mask plate OPC model comprises target pattern and scattering strip pattern;
The focus plane of delineation be positioned in the middle part of photoresist in described mask plate OPC model is adjusted to the plane of delineation at described photoresist top by step (b), forms scattering bar OPC model;
Step (c) carries out analogue exposure to described scattering bar OPC model, to carry out analog imaging to described scattering strip profile, and detects accordingly.
As preferably, also further comprising the steps after described step (a):
Collection is positioned at the data of the described target pattern on the focus plane of delineation in the middle part of described photoresist;
Described data according to obtaining set up mask plate OPC model.
As preferably, also further comprising the steps after described step (b):
Collect the data of the described scattering strip be positioned on the plane of delineation at described photoresist top, and according to described data, described scattering bar OPC model is revised.
As preferably, further comprising the steps of after described step (c):
When analogue exposure is carried out to described scattering bar OPC model, be associated between true exposing wafer amount when imaging phenomenon appears in scattering strip described in analogue exposure amount when scattering strip described in simulation process being occurred imaging phenomenon and true exposing wafer process.
As preferably, set up described association by the test pattern of described scattering strip.
As preferably, in described step (a), mask plate OPC model comprises the bottom anti-reflection layer, photoresist layer and the top cover layer that deposit successively.
As preferably, in described step (b), the focus plane of delineation in described mask plate OPC model in the middle part of photoresist is adjusted to the interface between described photoresist layer and described top cover layer.
As preferably, described step (c) also comprises: simulate target pattern according to described mask plate OPC model, monitors according to the imaging of analog result to described target pattern.
As preferably, described scattering strip is arranged at around described target pattern, to improve image contrast.
As preferably, the shape of described scattering strip is one or more in rectangle, square and irregular figure.
As preferably, in described step (c), overexposure is carried out to described scattering bar OPC model, to carry out analog imaging to described scattering strip.
As preferably, in described step (b), scattering bar OPC model is only for carrying out analog imaging to the profile of described scattering strip.
In the present invention, the focus plane of delineation in the middle part of mask plate OPC model is moved to the top of described mask plate OPC model, set up new OPC model, described OPC model is scattering bar OPC model, described scattering bar OPC model is only for simulating the profile of described scattering strip, by carrying out exposure simulation to scattering bar OPC model, obtain the simulation profile of scattering strip, thus described scattering strip is detected, described analog result is consistent with the result of true exposing wafer, therefore can realize detecting the actual imaging of described sbar by described simulation, described method can be more efficient, accurately the imaging of described sbar is detected.
More effectively and accurately examination and controlling can be carried out to described sbar by the method for the invention, the actual association between the analogue exposure energy of (time in described sbar design transfer to described wafer) when sbar starts to occur imaging phenomenon and true exposing wafer energy can also be set up simultaneously, exposure required when namely obtaining true exposing wafer by this association after obtaining analogue exposure amount, makes described method easier, efficient.
Accompanying drawing explanation
Following accompanying drawing of the present invention in this as a part of the present invention for understanding the present invention.Shown in the drawings of embodiments of the invention and description thereof, be used for explaining device of the present invention and principle.In the accompanying drawings,
The plane that Fig. 1 is image described in an embodiment of the present invention choose schematic diagram;
Fig. 2 a-c be positioned in the middle part of photoresist layer in an embodiment of the present invention and photoresist layer top image plane for sbar on mask plate simulation schematic diagram and exposure schematic diagram;
Fig. 3 a-c be positioned in the middle part of photoresist layer in another embodiment of the present invention and photoresist layer top image plane for sbar on mask plate simulation schematic diagram and exposure schematic diagram;
Fig. 4 a-c be positioned in the middle part of photoresist layer in an embodiment more of the present invention and photoresist layer top image plane for sbar on mask plate simulation schematic diagram and exposure schematic diagram;
Fig. 5 is the schematic flow sheet of of the present invention one detection method described in embodiment particularly.
Embodiment
In the following description, a large amount of concrete details is given to provide more thorough understanding of the invention.But, it is obvious to the skilled person that the present invention can be implemented without the need to these details one or more.In other example, in order to avoid obscuring with the present invention, technical characteristics more well known in the art are not described.
Should give it is noted that term used here is only to describe specific embodiment, and be not intended to restricted root according to exemplary embodiment of the present invention.As used herein, unless the context clearly indicates otherwise, otherwise singulative be also intended to comprise plural form.In addition, it is to be further understood that, " comprise " when using term in this manual and/or " comprising " time, it indicates exists described feature, entirety, step, operation, element and/or assembly, but does not get rid of existence or additional other features one or more, entirety, step, operation, element, assembly and/or their combination.
Now, describe in more detail with reference to the accompanying drawings according to exemplary embodiment of the present invention.But these exemplary embodiments can multiple different form be implemented, and should not be interpreted as being only limited to the embodiments set forth herein.Should be understood that, providing these embodiments to be of the present inventionly disclose thorough and complete to make, and the design of these exemplary embodiments fully being conveyed to those of ordinary skill in the art.In the accompanying drawings, for the sake of clarity, use the element that identical Reference numeral represents identical, thus will omit description of them.
The present invention is in order to solve problem not accurate enough to the scattering strip Imaging Simulation in described mask plate OPC model in prior art, provide a kind of new analogy method, particularly, a kind of the imaging of scattering strip in OPC mask plate OPC model to be simulated more accurately, pattern can not be formed on wafer when exposing, improve yield prepared by wafer, in order to realize described object, according to the OPC mask plate of target pattern in the present invention, the focus plane of delineation be positioned in the middle part of photoresist in described mask plate OPC model is adjusted to the plane of delineation at described photoresist top, set up new OPC model, described OPC model is scattering bar OPC model, described scattering bar OPC model is only for simulating the profile of described scattering strip, by carrying out exposure simulation to scattering bar OPC model, obtain the simulation profile of scattering strip, for the detection to described scattering strip imaging, to improve the accuracy of pattern image checking.
Detection method of the present invention comprises:
Step (a) prepares mask plate OPC model, and described mask plate OPC model comprises target pattern and scattering strip pattern;
The focus plane of delineation be positioned in the middle part of photoresist in described mask plate OPC model is adjusted to the plane of delineation at described photoresist top by step (b), forms scattering bar OPC model;
Step (c) carries out analogue exposure to described scattering bar OPC model, to carry out analog imaging to described loose vitta profile, and detects accordingly.
As preferably, the formation focus plane of delineation at the middle part of photoresist in described mask plate OPC model, as second plane of delineation, after described second plane of delineation of formation, described second plane of delineation is collected the data of described target pattern, such as characterize the shape of described target pattern, the data of critical size, then set up described mask plate OPC model according to described data.
Further, on the basis revised described mask plate OPC model, by described second Image Adjusting to the plane of delineation at described photoresist top, to form first plane of delineation; Described first plane of delineation is collected the data of described scattering strip, such as characterize the shape of described scattering strip, the data of critical size, and according to described data, described corrected mask plate OPC model is revised, to obtain described scattering bar OPC model, described scattering bar OPC model is independent of described corrected mask plate OPC model, only carries out profile simulation to described scattering strip.
Further, in order to make described method more efficient, can also analogue exposure amount further when described scattering strip being occurred imaging phenomenon and being associated between true exposing wafer amount, to determine true exposing wafer amount efficiently according to analogue exposure amount, particularly, described association is set up by the test pattern of scattering strip.
Further, in described step (a), mask plate OPC model comprises the bottom anti-reflection layer, photoresist layer and the top cover layer that deposit successively, second plane of delineation is formed in the middle part of described photoresist layer, described second plane of delineation is collected the data of described target pattern, such as characterize the shape of described target pattern, the data of critical size, then set up mask plate OPC model according to described data.
Then the focus of described second plane of delineation is transferred to (top of described photoresist layer) between described photoresist layer and top cover layer, form first plane of delineation, the data of described scattering strip are collected at described first plane of delineation, such as characterize the shape of described scattering strip, the data of critical size, described scattering strip is positioned at around described target pattern, and do further correction according to the mask plate OPC model of described data to described corrected target pattern, to obtain described scattering bar OPC model, described scattering bar OPC model is independent of described corrected mask plate OPC model, only profile simulation is carried out to described scattering strip.
Embodiment 1
Be further described below in conjunction with the method for accompanying drawing to Optical Proximity Correction of the present invention:
First mask plate OPC model is formed, as shown in Figure 1, described mask plate comprises the bottom anti-reflection layer (BARC) 101 deposited successively, photoresist layer 102 and top cover layer (topcoat) 103, in order to better to the image checking of scattering strip in described mask plate, first plane of delineation (image plane) 105 is formed at the top of described photoresist layer, described first plane of delineation 105 is positioned between described photoresist layer 102 and top cover layer (topcoat) 103, described first plane of delineation 105 is nearer apart from the distance of scattering strip imaging point in described mask plate, critical size and the shape of described sbar can be simulated better, to improve the accuracy of simulation.
Particularly, the focus plane of delineation first formed at the middle part of described photoresist layer 102, be called second plane of delineation (image plane) 104, described second plane of delineation (image plane) 104 is for detecting the imaging of target pattern.After second plane of delineation (image plane) 104 is chosen at the middle part of described photoresist layer 102, wafer data is collected in described second plane of delineation (image plane) 104, according to the data collected, described mask plate is corrected, and normal exposure simulation is carried out to target pattern, to realize the examination and controlling to described target pattern imaging with the mask plate OPC model after correcting.
Carry out after correction obtains correcting mask plate OPC model according to described wafer data to described mask plate, by the top being transferred to described photoresist layer 102 of described second plane of delineation (image plane) 104, to form first plane of delineation (image plane) 105.Particularly, the focus of described second plane of delineation (image plane) 104 is transferred to the top of described photoresist layer 102, to obtain first plane of delineation (image plane) 105.
Then the data of described sbar are collected by described first plane of delineation (image plane) 105, OPC correction is carried out to correction mask plate OPC model, to obtain scattering bar OPC model, exposure simulation is carried out by scattering bar OPC model, obtain the simulation profile of scattering strip, described simulation profile is consistent with true exposing wafer pattern, thus realizes the image checking to described sbar.
Whether accurate in order to verify the simulation of described scattering strip, also true exposing wafer is carried out to described mask plate OPC model in this embodiment, to evaluate described analog result.
Particularly, as shown in figs. 2 a-2 c, wherein, Fig. 2 a is for being arranged in the middle part of described photoresist layer when the described plane of delineation, collect the data of described wafer, and the pattern obtained when described sbar being simulated by the energy of overexposure 15% after mask plate being revised by described data, as can be seen from the figure, described sbar pattern can't form pattern after exposure on wafer.
And in figure 2b, when the plane of described image is arranged at described photoresist layer top (between photoresist layer 102 and top cover layer (topcoat) 103), collect the data of described wafer, and the pattern obtained when described sbar being simulated by the energy of overexposure 15% after mask plate being revised by described data, as can be seen from the figure, described sbar pattern can form pattern, stain as indicated by the arrows in the figure after exposure on wafer.Therefore, when the mask plate OPC model formed in diverse location is simulated sbar imaging, different results is obtained.
Wherein Fig. 2 c is the pattern obtained after true exposing wafer, concrete grammar is: first form mask plate OPC model, mask plate OPC model is actually photoresist in photoetching process and (is commonly called as photoresist, also photoresistance is claimed) " the print egative film " of layer, it is printed the geometric figure of original integrated circuit design layout.That is, from original integrated circuit design layout to the formation of wafer on-chip circuit figure, namely intermediate demand, through plate-making link, also needs to make and a set of it prints the lithography mask version of original integrated circuit design layout pattern as " print egative film ".The geometric figure be somebody's turn to do on " print egative film " is transferred on wafer by photoetching process exactly, forms the circuitous pattern on wafer.
The lithography process of lithography mask version is as follows: first, and smooth bright and clean glass (or quartz) base version forms chromium film base version by Deposited By Dc Magnetron Sputtering photosensitive material chromium nitride-nitrogen chromium oxide; Then, in this chromium film base version, even application one deck photoresist or electron sensitive resist make sol evenning chromium plate, and this sol evenning chromium plate is photomask-blank, and it makes the geometric desirable photonasty blank plate of micro; Finally, in photomask base version, printed the micro geometric figure be transformed by original integrated circuit design layout by photoetching mask-making technology, thus complete the plate-making process of lithography mask version.Described mask plate comprises the bottom anti-reflection layer (BARC) 101, photoresist layer 102 and the top cover layer (topcoat) 103 that deposit successively.
Then the described plane of delineation is selected to be arranged at the middle part of described photoresist layer 102, collect the data of described wafer, and exposed by the energy of overexposure 10% after mask plate being revised by described data, the patterning in mask plate OPC model is copied on the silicon chip of production chip.Fig. 2 c is the pattern obtained after exposing described revised mask plate, wherein selects the overexposure energy of 10%, has the pattern of described sbar in the pattern after exposure, as the stain of arrow indication in Fig. 2 c.
Therefore can be known by above-mentioned contrast, because described sbar size is less, its light intensity (lightintensity) is far smaller than the light intensity (light intensity) of described master pattern (main pattern), obtaining sbar analogue pattern when the plane of described image is arranged in the middle part of photoresist layer is inaccurate, the wafer obtained after exposure image is defective, and the sbar analogue pattern obtained when the planar shaped of described image is formed in the top of described photoresist layer is consistent with the pattern after actual exposing wafer, its analog result is more accurate.
Embodiment 2
First mask plate OPC model is formed, as shown in Figure 1, described mask plate comprises the bottom anti-reflection layer (BARC) 101 deposited successively, photoresist layer 102 and top cover layer (topcoat) 103, in order to better to the image checking of scattering strip in described mask plate, first plane of delineation (image plane) 105 is formed at the top of described photoresist layer, described first plane of delineation 105 is positioned between described photoresist layer 102 and top cover layer (topcoat) 103, described first plane of delineation 105 is nearer apart from the distance of scattering strip imaging point in described mask plate, critical size and the shape of described sbar can be simulated better, to improve the accuracy of simulation.
Particularly, form the focus plane of delineation at the middle part of described photoresist layer 102, be called second plane of delineation (image plane) 104, described second plane of delineation (image plane) 104 is for detecting the imaging of target pattern.After second plane of delineation (imageplane) 104 is chosen at the middle part of described photoresist layer 102, wafer data is collected in described second plane of delineation (image plane) 104, according to the data collected, described mask plate is corrected, and normal exposure simulation is carried out to target pattern, to realize the examination and controlling to described target pattern imaging with the mask plate OPC model after correcting.
Carry out after correction obtains correcting mask plate OPC model according to described wafer data to described mask plate, by the top being transferred to described photoresist layer 102 of described second plane of delineation (image plane) 104, to form first plane of delineation (image plane) 105.Particularly, the focus of described second plane of delineation (image plane) 104 is transferred to the top of described photoresist layer 102, to obtain first plane of delineation (image plane) 105.
Then the data of described sbar are collected by the plane (image plane) 105 of described first image, OPC correction is carried out to correction mask plate OPC model, to obtain scattering bar OPC model, exposure simulation is carried out by scattering bar OPC model, obtain the simulation profile of scattering strip, described simulation profile is consistent with true exposing wafer pattern, thus realizes the image checking to described sbar.
Whether accurate in order to verify the simulation of described scattering strip, also true exposing wafer is carried out to described mask plate OPC model in this embodiment, to evaluate described analog result.
As preferably, when selecting the mask plate OPC model after correction to simulate described target pattern, select normal exposure, and carry out in scattering strip mask plate OPC model the mode generally selecting overexposure when exposing simulation, as further preferably, the exposure of overexposure 15% is selected to simulate described sbar.
When described method carries out analogue exposure to described scattering bar OPC model, be associated between true exposing wafer amount when imaging phenomenon appears in scattering strip described in analogue exposure amount when scattering strip described in simulation process can also be occurred imaging phenomenon and true exposing wafer process.Be associated between analogue exposure energy when occurring that imaging phenomenon appears in sbar and true exposing wafer energy, to be applied to actual production better by monitoring the result obtained in simulation process.
Particularly, sbar imaging test pattern (sbar printing testpatterns) can be passed through and realize described association, the test pattern that described sbar imaging test pattern (sbar printing testpatterns) can select this area conventional, is not limited to a certain.Such as in sbar simulation process, select the overexposure of 15% (15%overdose sbar) to start to occur sbar imaging, in actual exposing wafer process, select the overexposure of 10% (10%overdose sbar) to start to occur sbar imaging.
Actual association between the true exposure energy occurring imaging phenomenon when starting to occur imaging phenomenon by setting up sbar in simulation process in (described sbar design transfer to described wafer on time) analogue exposure energy and true exposing wafer process, exposure when namely obtaining true exposing wafer by this association after obtaining analogue exposure amount, makes described method easier, efficient.
Particularly, as shown in figs 3 a-3 c, wherein, Fig. 3 a is for being arranged in the middle part of described photoresist layer when the described plane of delineation, collect the data of described wafer, and the pattern obtained when described sbar being simulated by the energy of overexposure 15% after mask plate being revised by described data, as can be seen from the figure, described sbar pattern can't form pattern after exposure on wafer.
And in fig 3b, when the plane of described image is arranged at described photoresist layer top (between photoresist layer 102 and top cover layer (topcoat) 103), collect the data of described wafer, and the pattern obtained when described sbar being simulated by the energy of overexposure 15% after mask plate being revised by described data, as can be seen from the figure, described sbar pattern can form pattern, stain as indicated by the arrows in the figure after exposure on wafer.Therefore, when the mask plate OPC model formed in diverse location is simulated sbar imaging, different results is obtained.
Wherein Fig. 3 c is the pattern obtained after true exposing wafer, concrete grammar is: first form mask plate OPC model, mask plate OPC model is actually photoresist in photoetching process and (is commonly called as photoresist, also photoresistance is claimed) " the print egative film " of layer, it is printed the geometric figure of original integrated circuit design layout.That is, from original integrated circuit design layout to the formation of wafer on-chip circuit figure, namely intermediate demand, through plate-making link, also needs to make and a set of it prints the lithography mask version of original integrated circuit design layout pattern as " print egative film ".The geometric figure be somebody's turn to do on " print egative film " is transferred on wafer by photoetching process exactly, forms the circuitous pattern on wafer.
The lithography process of lithography mask version is as follows: first, and smooth bright and clean glass (or quartz) base version forms chromium film base version by Deposited By Dc Magnetron Sputtering photosensitive material chromium nitride-nitrogen chromium oxide; Then, in this chromium film base version, even application one deck photoresist or electron sensitive resist make sol evenning chromium plate, and this sol evenning chromium plate is photomask-blank, and it makes the geometric desirable photonasty blank plate of micro; Finally, in photomask base version, printed the micro geometric figure be transformed by original integrated circuit design layout by photoetching mask-making technology, thus complete the plate-making process of lithography mask version.Described mask plate comprises the bottom anti-reflection layer (BARC) 101, photoresist layer 102 and the top cover layer (topcoat) 103 that deposit successively.
Then the described plane of delineation is selected to be arranged at the middle part of described photoresist layer 102, collect the data of described wafer, and exposed by the energy of overexposure 10% after mask plate being revised by described data, the patterning in mask plate OPC model is copied on the silicon chip of production chip.Fig. 3 c is the pattern obtained after exposing described revised mask plate, wherein select the overexposure energy of 10%, this energy is obtained by overexposure energy during described simulation and the association between true exposing wafer energy, wherein, there is the pattern of described sbar, as the stain of arrow indication in Fig. 3 c in pattern after exposure.
Therefore can be known by above-mentioned contrast, because described sbar size is less, its light intensity (lightintensity) is far smaller than the light intensity (light intensity) of described master pattern (main pattern), obtaining sbar analogue pattern when the plane of described image is arranged in the middle part of photoresist layer is inaccurate, the wafer obtained after exposure image is defective, and the sbar analogue pattern obtained when the planar shaped of described image is formed in the top of described photoresist layer is consistent with the pattern after actual exposing wafer, its analog result is more accurate.
In described Fig. 3 a-3c and Fig. 2 a-2c target pattern and sbar number, shape and to arrange closeness different, but all can illustrate that the method for the invention can more efficiently, accurately detect the imaging of described sbar by above-mentioned example.
Embodiment 3
Different in the composition embodiment 2 of described mask plate OPC model in this embodiment, described mask plate OPC model only comprises a photoresist layer in this embodiment, does not arrange bottom anti-reflection layer and top cover layer, and remaining is all identical with embodiment 2.The analogue pattern obtained by this embodiment and true wafer pattern are as depicted in figure 4 a-4 c.
Fig. 4 a is for being arranged in the middle part of described photoresist layer when the described plane of delineation, collect the data of described wafer, and the pattern obtained when described sbar being simulated by the energy of overexposure 15% after mask plate being revised by described data, as can be seen from the figure, described sbar pattern can't form pattern after exposure on wafer.
And in fig. 4b, when the plane of described image is arranged at described photoresist layer top, collect the data of described wafer, and the pattern obtained when described sbar being simulated by the energy of overexposure 15% after mask plate being revised by described data, as can be seen from the figure, described sbar pattern can form pattern, stain as indicated by the arrows in the figure after exposure on wafer.Therefore, when the mask plate OPC model formed in diverse location is simulated sbar imaging, different results is obtained.
Wherein Fig. 4 c is the pattern obtained after true exposing wafer, described mask plate OPC model is photoresist layer 102, then the described plane of delineation is selected to be arranged at the middle part of described photoresist layer 102, collect the data of described wafer, and exposed by the energy of overexposure 10% after mask plate being revised by described data, the patterning in mask plate OPC model is copied on the silicon chip of production chip.Fig. 4 c is the pattern obtained after exposing described revised mask plate, wherein select the overexposure energy of 10%, this energy is obtained by overexposure energy during described simulation and the association between true exposing wafer energy, wherein, there is the pattern of described sbar, as the stain of arrow indication in Fig. 4 c in pattern after exposure.
Therefore can be known by above-mentioned contrast, because described sbar size is less, its light intensity (lightintensity) is far smaller than the light intensity (light intensity) of described master pattern (main pattern), obtaining sbar analogue pattern when the plane of described image is arranged in the middle part of photoresist layer is inaccurate, the wafer obtained after exposure image is defective, and the sbar analogue pattern obtained when the planar shaped of described image is formed in the top of described photoresist layer is consistent with the pattern after actual exposing wafer, its analog result is more accurate.
In the present invention, the plane of delineation in the middle part of mask plate OPC model is moved to the top of described mask plate OPC model, set up new OPC model, described OPC mask plate is scattering bar OPC model, described scattering bar OPC model is only for simulating the profile of described scattering strip, by carrying out exposure simulation to scattering bar OPC model, obtain the simulation profile of scattering strip, thus described scattering strip is detected, described analog result is consistent with the result of true exposing wafer, therefore can realize detecting the actual imaging of described sbar by described simulation, described method can be more efficient, accurately the imaging of described sbar is detected.
More effectively and accurately examination and controlling can be carried out to described sbar by the method for the invention, the actual association between (time in described sbar design transfer to described wafer) analogue exposure energy and true exposing wafer energy when sbar starts to occur imaging phenomenon can also be set up simultaneously, exposure required when namely obtaining true exposing wafer by this association after obtaining analogue exposure amount, makes described method easier, efficient.
Fig. 5 is the schematic flow sheet of of the present invention one detection method described in embodiment particularly, specifically comprises the following steps:
Step (a) prepares mask plate OPC model, and described mask plate OPC model comprises target pattern and scattering strip pattern;
The focus plane of delineation be positioned in the middle part of photoresist in described mask plate OPC model is adjusted to the plane of delineation at described photoresist top by step (b), forms scattering bar OPC model;
Step (c) carries out analogue exposure to described scattering bar OPC model, to carry out analog imaging to described scattering strip profile, and detects accordingly.
The present invention is illustrated by above-described embodiment, but should be understood that, above-described embodiment just for the object of illustrating and illustrate, and is not intended to the present invention to be limited in described scope of embodiments.In addition it will be appreciated by persons skilled in the art that the present invention is not limited to above-described embodiment, more kinds of variants and modifications can also be made according to instruction of the present invention, within these variants and modifications all drop on the present invention's scope required for protection.Protection scope of the present invention defined by the appended claims and equivalent scope thereof.
Claims (12)
1. a detection method for scattering strip analog imaging, comprising:
Step (a) prepares mask plate OPC model, and described mask plate OPC model comprises target pattern and scattering strip pattern;
The focus plane of delineation be positioned in the middle part of photoresist in described mask plate OPC model is adjusted to the plane of delineation at described photoresist top by step (b), forms scattering bar OPC model;
Step (c) carries out analogue exposure to described scattering bar OPC model, to carry out analog imaging to described scattering strip profile, and detects accordingly.
2. method according to claim 1, is characterized in that, further comprising the steps of before described step (a):
Collection is positioned at the data of the described target pattern on the focus plane of delineation in the middle part of described photoresist;
Described mask plate OPC model is set up based on the described data obtained.
3. method according to claim 1 and 2, is characterized in that, also further comprising the steps after described step (b):
Collect the data of the described scattering strip be positioned on the plane of delineation at described photoresist top, and according to described data, described scattering bar OPC model is revised.
4. method according to claim 1, is characterized in that, further comprising the steps of after described step (c):
When analogue exposure is carried out to described scattering bar OPC model, be associated between true exposing wafer amount when imaging phenomenon appears in scattering strip described in analogue exposure amount when scattering strip described in simulation process being occurred imaging phenomenon and true exposing wafer process.
5. method according to claim 4, is characterized in that, sets up described association by the test pattern of described scattering strip.
6. method according to claim 1, is characterized in that, in described step (a), mask plate OPC model comprises the bottom anti-reflection layer, photoresist layer and the top cover layer that deposit successively.
7. method according to claim 6, is characterized in that, in described step (b), the focus plane of delineation in described mask plate OPC model in the middle part of photoresist is adjusted to the interface between described photoresist layer and described top cover layer.
8. method according to claim 1 and 2, is characterized in that, described step (c) also comprises: simulate target pattern according to described mask plate OPC model, monitors according to the imaging of analog result to described target pattern.
9. method according to claim 1, is characterized in that, described scattering strip is arranged at around described target pattern, to improve image contrast.
10. method according to claim 1, is characterized in that, the shape of described scattering strip is one or more in rectangle, square and irregular figure.
11. methods according to claim 1, is characterized in that, carry out overexposure in described step (c) to described scattering bar OPC model, to carry out analog imaging to described scattering strip.
12. methods according to claim 1, is characterized in that, in described step (b), scattering bar OPC model is only for carrying out analog imaging to the profile of described scattering strip.
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