CN104409622A - Structure and manufacturing method of a high-frequency thin-film thermoelectric converter - Google Patents
Structure and manufacturing method of a high-frequency thin-film thermoelectric converter Download PDFInfo
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- CN104409622A CN104409622A CN201410545132.2A CN201410545132A CN104409622A CN 104409622 A CN104409622 A CN 104409622A CN 201410545132 A CN201410545132 A CN 201410545132A CN 104409622 A CN104409622 A CN 104409622A
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Abstract
The invention discloses a structure and a manufacturing method of a high-frequency thin-film thermoelectric converter. A heating resistor (3) of the thin-film thermoelectric converter is formed by a central silicon nitride or silicon dioxide insulating core layer (8) and a surface conductive layer surrounding the insulating core layer (8), and can reduce influence of skin effect on thermoelectric conversion performance of the thin-film thermoelectric converter. A silicon substrate between heating resistor pads (5) is completely etched while a heat insulating film (2) is etched. Since the dielectric constant of air is far less than the dielectric constant of the silicon material, it is possible to effectively reduce the capacitance between the heating resistor pads (5) and thereby reduce AC-DC conversion errors during the thermoelectric conversion.
Description
Technical field
The present invention relates to structure and the manufacture method of thermoelectric converter, particularly a kind of structure of high-frequency film thermoelectric converter and manufacture method, belong to microelectromechanical systems (MEMS) field.
Background technology
AC-DC conversion standard is one of basic electricity standard, the alternating voltage of 10Hz ~ 1MHz (or electric current) can be derived from corresponding DC quantity by this standard, and (uncertainty is better than 10 to be traceable to Josephson's direct current quantum voltage reference
-8).The most accurate AC-DC conversion modular system is realized by thermoelectric converter in the world at present.Thermoelectric converter is made up of heating resistor and temperature sensor.Alternating voltage (or electric current) and direct voltage (or electric current) are applied on heating resistor successively in turn, the temperature of temperature sensor measurement heating resistor, relatively the Joule heat of their generations, just can measure the size that alternating voltage (or electric current) produces electrical power.For desirable thermoelectric converter, the AC and DC voltage of constant power is applied to identical heating resistor two ends, and the output voltage of temperature sensor also should be equal.
Thermoelectric converter as AC-DC conversion standard has following three kinds of main Types: unit thermoelectric converter, three-dimensional polynary thermoelectric converter and film (or plane) type thermoelectric converter.
Unit thermoelectric converter was succeeded in developing the fifties in last century, and a thin reheater in being steeped by vacuum glass and a pair thermocouple form.Thermocouple by the glass of insulation or ceramic bead and the thermo-contact of heater mid point with the temperature of HEATER FOR MEASURING.SJTC structure is simple, Hz-KHz is wide (maximum operating frequency can reach GHz), and long term drift can be ignored, and is widely used in AC-DC conversion standard and AC power standard.In parallel by with shunt, current measuring range extends between 1mA ~ 20A; By the series winding with inductive voltage divider or Range Extension resistance, voltage measurement scope extends between 0.001 ~ 1000V.The uncertainty of the AC-DC conversion standard set up with it is 10
-6magnitude.The shortcoming of SJTC is that heat outputting electric potential signal is fainter, for reaching 10
-6magnitude conversion accuracy, thermoelectric potential certainty of measurement needs to reach to receive volt magnitude.
The polynary thermoelectric converter of solid that 70 ~ eighties of last century occurs is succeeded in developing by German federal standard laboratory the earliest.Make the polynary thermoelectric converter of this solid to need to be that the thermocouple wire of 10 μm is together in series by the mode such as spot welding or argon arc welding and forms spiral line type thermoelectric pile under the microscope by diameter, thermoelectric pile supports a two-wire heater, utilizes thermoelectric pile HEATER FOR MEASURING temperature.The shortcoming of three-dimensional polynary thermoelectric converter be frequency of utilization narrow range, easily by electrostatic breakdown, manual operations, be not suitable for batch production, expensive.
Along with the continuous maturation of the development of modern science and technology, particularly micromachining technology and thin film technique, the structure of thermoelectric converter and manufacture craft there occurs significant change.German federal standard laboratory in 1989 have developed in the world First based on the multi-element film thermoelectric converter of thermoelectric pile temperature-measurement principle.The hot junction of heating resistor and thermocouple is positioned at the Si of back side anisotropic etch making
3n
4/ SiO
2/ Si
3n
4insulating film upper surface, the cold junction of thermocouple on a silicon substrate.Adopt 100 multipair CuNi
44-Cu or the larger Bi-Sb thermocouple measurement heating resistor temperature of Sai Beier coefficient, two thermocouple wires, usually at same plane, also can be overlaped by insulating interlayer up and down.Early stage heating resistor material is CuNi
44, used NiCr or Ni of low Thomson coefficient afterwards instead
45cr
50si
5deng material, adopt suitable annealing process that temperature coefficient of resistance can be made to reach less than several ppm/ DEG C.The AC-DC conversion error of obtained thin film thermoelectric transducer is 0.1 × 10 in intermediate frequency range (100Hz ~ 100kHz)
-6, be 8 × 10 during 100kHz
-6, be 40 × 10 during 1MHz
-6, year stability be better than 0.1%.The aerial responsiveness of thermoelectric converter (output voltage and AC signal power ratio) adopting 134 pairs of Bi-Sb thermocouple compositions is 16V/W, and the responsiveness in vacuum is 120V/W.
Except German federal standard test is outdoor, Unite States Standard Institute for Research and Technology, Inje university of Korea S, state-run advanced Industrial Science and Technology Institute of Japan all adopt this temp measuring method to realize thin film thermoelectric transducer, and the device that performance and PTB develop is close.Compared with the polynary thermoelectric converter of solid, this multi-element film thermoelectric converter realized based on thermoelectric pile thermometry has the following advantages: the Si that (1) utilizes back side anisotropic etch to make
3n
4/ SiO
2/ Si
3n
4adiabatic membrane good heat-insulation effect, maximum output voltage is generally greater than 100mV.(2) adopt the technology generations such as the dual surface lithography in thin-film technique and micromachining technology, evaporation (or sputtering) to make thermoelectric pile for manual operations and there is desirable periodic structure, make the thermal resistance of each section of heating resistor substantially identical with temperature, reduce the AC-DC conversion error that Thomson effect is introduced.(3) pad made on the silicon dioxide insulating layer of surface of silicon between heating resistor and outer lead can make the heat produced because of peltier effect effectively be conducted by silicon substrate, substantially can ignore the error that thermoelectricity conversion produces.(4) utilize micromachining technology to realize batch making, cost significantly declines.Therefore the polynary thermoelectric converter of film is the focus of current thermoelectric converter research.
Multi-element film thermoelectric converter has larger thermoelectricity transformed error under low frequency (below 100Hz) and high frequency (more than 100KHz).At low frequency, thermoelectricity transformed error mainly stems from the hot ripple of frequency multiplication that thermal inertia deficiency produces.In order to increase the time constant of thermoelectric converter, need to make a siliceous gauge block below heating resistor, improve thermal time constant, on bonding pad, compensating circuit can make AC-DC conversion error be less than 3 × 10 when 10Hz
-6.
Under high frequency, the thermoelectricity transformed error of film thermoelectric converter mainly stems from the capacitive coupling between the skin effect of heating resistor, heating resistor two pads.
(1) when the power frequency by heating resistor increases, due to the impact of eddy current, the impedance of conductor core is increased, electric current major part is flow through by conductive surface, and this phenomenon is exactly skin effect.Skin effect makes the direct current equivalent resistance of heating resistor different from AC equivalent resistance when passing into high-frequency ac current, creates AC-DC conversion difference.
(2) in the contact position of two kinds of different metals, because the chemical potential of material is different, contact potential difference is produced, thus internal field is formed in contact position, when direction of an electric field is consistent with the sense of current, heat release on node, otherwise then absorb heat, this phenomenon is called peltier effect.The heat that peltier effect produces is a kind of interference relative to the Joule heat that heating resistor produces, in order to reduce the thermoelectricity transformed error introduced because of peltier effect, need the pad between heating resistor and outer lead to be produced on to have on the silicon substrate of good thermal conductivity.Research shows: the electric capacity between pad is one of main source of thermoelectricity transformed error under high frequency.The high frequency response characteristic improving thermoelectric converter can realize by reducing pad capacitance, that is reduces the area of pad, increases the distance between pad, or make pad on the quartz crystal or vitreous silica substrate of low-k.Traditional silicon substrate is changed into quartz crystal or vitreous silica substrate by the people such as the L.Scarioni of such as German federal standard laboratory, the T.E.Lipe of Unite States Standard Institute for Research and Technology (NIST), because the relative dielectric constant of quartz is less than silicon substrate, because this reducing the capacitance between heating resistor pad, improve thin film thermoelectric transducer performance in high frequency.Within the scope of 100 ~ 500kHz, AC-DC conversion error-reduction is to 3 × 10
-6, be 5 × 10 within the scope of 700KHz ~ 1MHz
-6.But quartz material is difficult to processing, when the thickness of film little to tens microns time, become very frangible.
In sum, in order to reduce film thermoelectric converter AC-DC conversion error in high frequency, reduce device cost of manufacture, technical strategies must be adopted to reduce capacitive coupling between skin effect and heating resistor pad to the impact of film thermoelectric converter.
Summary of the invention
The object of the invention is to invent a kind of high-frequency film thermoelectric converter, the capacitive coupling between reduction heating resistor skin effect and heating resistor pad, on the impact of film thermoelectric converter, reduces the AC-DC conversion error in thermoelectricity transfer process.
For achieving the above object, the technical solution adopted in the present invention is: the heating resistor (3) of film thermoelectric converter by center silicon nitride or silicon dioxide insulator sandwich layer (8) and form around the surface conductive layer (7) of insulative core layer (8).Because the core of heating resistor (3) is insulating material, reduce the impact of eddy current, be no matter high frequency or low-frequency current by heating resistor (3) time, electric current is all flow through by surface conductive layer (7), therefore can reduce the impact of skin effect on thermoelectricity conversion performance.
The electric resistance (3) of high-frequency film thermoelectric converter involved in the present invention can adopt following methods to make:
(6) evaporation or sputtering technology depositing metal film.
(7) low pressure chemical phase precipitation (LPCVD) technology, plasma enhanced chemical vapor deposition (PECVD) technology or sputtering technology makes silicon nitride or silicon dioxide insulator film.
(8) photoetching heating resistor insulative core layer, dry etching or wet etching silicon nitride or silicon dioxide insulator film, remove photoresist, and forms insulative core layer (8).
(9) again evaporation or sputtering deposit metallic film.
(10) photoetching heating resistor shape, the metallic film of dry etching or wet etching (1) step and (4) step process deposit forms the surface conductive layer (7) of heating resistor (3).
For the capacitive coupling between reduction heating resistor pad (5) is on the impact of device, reduce the AC-DC conversion error in thermoelectric converter process, the technical solution adopted in the present invention is: while back side corrosion insulating film (2) by heating resistor pad (5) between silicon substrate corrode completely, form isolation channel (6).Because the dielectric constant of air is much smaller than the dielectric constant of silicon materials, therefore can effectively reduce the electric capacity between heating resistor pad (5), thus reduce the AC-DC conversion error in thermoelectric converter process.
High-frequency film thermoelectric converter involved in the present invention has the following advantages: owing to reducing the capacitive coupling between skin effect and heating resistor pad (5), therefore have less AC-DC conversion error in high frequency.
Accompanying drawing explanation
Fig. 1 is high-frequency film thermoelectric converter structural representation involved in the present invention.
Fig. 2 is the structural representation of the heating resistor of high-frequency film thermoelectric converter involved in the present invention.
Fig. 3 (a) is high-frequency film thermoelectric converter involved in the present invention structural representation when observing from the back side.Fig. 3 (b) is the mask schematic diagram corroding this heat insulating construction from chip back.
Fig. 4 is the fabrication processing figure of the high-frequency film thermoelectric converter as the embodiment of the present invention.
In accompanying drawing:
1-substrate 2-insulating film 3-heating resistor
4-thermoelectric pile 5-heating resistor pad 6-isolation channel
7-surface conductive layer 8-insulative core layer 9-convex corner compensation figure
10-silica membrane 11-silicon nitride film 12-polysilicon membrane
13-polysilicon electrode 14-NiCrSi film 15-insulating silicon nitride film
16-aluminium electrode
Embodiment
Below in conjunction with drawings and Examples, the present invention will be further described, but be not limited to this embodiment.
Embodiment:
Technical scheme of the present invention is utilized to make a kind of high-frequency film thermoelectric converter.Its fabrication processing is as follows:
1) substrate (1) is (100) face, resistivity 1 ~ 10 Ω .cm, twin polishing N-type silicon chip.(see accompanying drawing 4 [1])
2) thermal oxidation, grows 0.6 micron thickness silica membrane (10).(see accompanying drawing 4 [2])
3) low-pressure chemical vapor phase deposition method (LPCVD) deposition silicon nitride film (11), thickness 200nm.(see accompanying drawing 4 [3])
4) low-pressure chemical vapor phase deposition polysilicon membrane (12), thickness 600nm, utilizes diffusion technology to polysilicon membrane (12) doped with boron atom, 950 DEG C, anneals 30 minutes under nitrogen atmosphere.(see accompanying drawing 4 [4])
5) lithographic etch process combines and makes the polysilicon electrode (13) of composition thermoelectric pile.(see accompanying drawing 4 [5])
6) magnetron sputtering technique deposit NiCrSi film (14), thickness 0.1 micron.(see accompanying drawing 4 [6])
7) plasma enhanced chemical vapor deposition (PECVD) technique makes insulating silicon nitride film (15).(see accompanying drawing 4 [7])
8) photoetching heating resistor insulative core layer (8) figure, dry etching silicon nitride insulation film, removes photoresist.(see accompanying drawing 4 [8])
9) magnetron sputtering technique deposit NiCrSi film (14), thickness 0.1 micron.(see accompanying drawing 4 [9])
10) photoetching heating resistor (3) shape, cerous nitrate solution (cerous nitrate 10g, 70%HNO3 solution 10ml, 100ml H
2o) wet etching NiCrSi film (14), forms heating resistor (3).(see accompanying drawing 4 [10])
11) sputtered aluminum film (16), anti-carves aluminium, corrodes aluminum steel in 70 DEG C of phosphoric acid solutions, as aluminium electrode (18) and the pad (5) of composition thermoelectric pile (4).450 DEG C, alloying 30 minutes in nitrogen atmosphere.(see accompanying drawing 4 [11])
12) back side photoetching; front protecting, corrosion or etched backside silicon dioxide and silicon nitride film, form back of the body corrosion window (17); silicon substrate below anisotropic etch insulating film (2), until the back side exposes insulating film (2).(see accompanying drawing 4 [12])
Obviously, above-mentioned explanation is not restriction of the present invention, and the present invention is also not limited in above-mentioned citing, and the change that those skilled in the art do in essential scope of the present invention, remodeling, interpolation or replacement also should belong to protection scope of the present invention.
Claims (3)
1. a high-frequency film thermoelectric converter, is characterized in that the heating resistor (3) of film thermoelectric converter is made up of the silicon nitride at center or the surface conductive layer (7) of silicon dioxide insulator sandwich layer (8) and encirclement insulative core layer (8); While corrosion insulating film (2) by heating resistor pad (5) between silicon substrate corrode completely, form isolation channel (6).
2. high-frequency film thermoelectric converter according to claim 1, it is characterized in that: the core of heating resistor (3) is insulating material, reduce the impact of eddy current, be no matter high frequency or low-frequency current by heating resistor (3) time, electric current is all flow through by surface conductive layer (7), therefore can reduce the impact of skin effect on thermoelectricity conversion performance, improve the upper limit of thermoelectric converter frequency of utilization scope.
3. high-frequency film thermoelectric converter according to claim 1, is characterized in that: the electric resistance of high-frequency film thermoelectric converter involved in the present invention can adopt following methods to make:
(1) evaporation or sputtering technology depositing metal film;
(2) plasma enhanced chemical vapor deposition (PECVD) technology or sputtering technology make silicon nitride or silicon dioxide insulator film;
(3) photoetching heating resistor insulative core layer, dry etching or wet etching silicon nitride or silicon dioxide insulator film, remove photoresist, and forms insulative core layer (8);
(4) again evaporation or sputtering deposit metallic film;
(5) photoetching heating resistor shape, the metallic film of twice deposit before and after dry etching or wet etching forms the surface conductive layer (7) of heating resistor (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410545132.2A CN104409622A (en) | 2014-10-15 | 2014-10-15 | Structure and manufacturing method of a high-frequency thin-film thermoelectric converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410545132.2A CN104409622A (en) | 2014-10-15 | 2014-10-15 | Structure and manufacturing method of a high-frequency thin-film thermoelectric converter |
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| Publication Number | Publication Date |
|---|---|
| CN104409622A true CN104409622A (en) | 2015-03-11 |
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ID=52647234
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410545132.2A Pending CN104409622A (en) | 2014-10-15 | 2014-10-15 | Structure and manufacturing method of a high-frequency thin-film thermoelectric converter |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111721469A (en) * | 2020-06-17 | 2020-09-29 | 中国计量大学 | High-sensitivity miniature Pirani gauge |
Citations (5)
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|---|---|---|---|---|
| DE4004144A1 (en) * | 1990-02-10 | 1991-08-14 | Manfred Dipl Ing Klonz | Planar multi-junction thermal converter - having increased time constant provided by silicon obelisk |
| CN1685450A (en) * | 2002-09-26 | 2005-10-19 | 飞思卡尔半导体公司 | Current-carrying electronic component and method of manufacturing same |
| CN101566506A (en) * | 2008-04-22 | 2009-10-28 | 中国计量学院 | Structure of film thermoelectric converter based on micro bridge resonator and fabricating method thereof |
| JP2012222313A (en) * | 2011-04-14 | 2012-11-12 | Panasonic Corp | Case mold type capacitor |
| CN102903641A (en) * | 2012-10-26 | 2013-01-30 | 哈尔滨工程大学 | Method for reducing partial contact resistance and parasitic capacitance of SOI (Silicon on Insulator) PD (Partially-Depleted) MOSFET (Metal-Oxide -Semiconductor Field Effect Transistor) |
-
2014
- 2014-10-15 CN CN201410545132.2A patent/CN104409622A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4004144A1 (en) * | 1990-02-10 | 1991-08-14 | Manfred Dipl Ing Klonz | Planar multi-junction thermal converter - having increased time constant provided by silicon obelisk |
| CN1685450A (en) * | 2002-09-26 | 2005-10-19 | 飞思卡尔半导体公司 | Current-carrying electronic component and method of manufacturing same |
| CN101566506A (en) * | 2008-04-22 | 2009-10-28 | 中国计量学院 | Structure of film thermoelectric converter based on micro bridge resonator and fabricating method thereof |
| JP2012222313A (en) * | 2011-04-14 | 2012-11-12 | Panasonic Corp | Case mold type capacitor |
| CN102903641A (en) * | 2012-10-26 | 2013-01-30 | 哈尔滨工程大学 | Method for reducing partial contact resistance and parasitic capacitance of SOI (Silicon on Insulator) PD (Partially-Depleted) MOSFET (Metal-Oxide -Semiconductor Field Effect Transistor) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111721469A (en) * | 2020-06-17 | 2020-09-29 | 中国计量大学 | High-sensitivity miniature Pirani gauge |
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Application publication date: 20150311 |