CN104409378B - Method for monitoring flat-panel display ion implantation device and jig used for the same - Google Patents
Method for monitoring flat-panel display ion implantation device and jig used for the same Download PDFInfo
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- CN104409378B CN104409378B CN201410639950.9A CN201410639950A CN104409378B CN 104409378 B CN104409378 B CN 104409378B CN 201410639950 A CN201410639950 A CN 201410639950A CN 104409378 B CN104409378 B CN 104409378B
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- 238000005468 ion implantation Methods 0.000 title claims abstract description 45
- 238000000034 method Methods 0.000 title claims abstract description 39
- 238000012544 monitoring process Methods 0.000 title claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 99
- 239000011521 glass Substances 0.000 claims abstract description 47
- 238000000137 annealing Methods 0.000 claims abstract description 24
- 238000012360 testing method Methods 0.000 claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 238000002347 injection Methods 0.000 claims description 32
- 239000007924 injection Substances 0.000 claims description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 8
- 229920005591 polysilicon Polymers 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000005224 laser annealing Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 13
- 150000002500 ions Chemical class 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 230000004913 activation Effects 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 3
- 239000002699 waste material Substances 0.000 abstract description 3
- 238000002513 implantation Methods 0.000 abstract 2
- 238000005520 cutting process Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 229920001621 AMOLED Polymers 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000001819 mass spectrum Methods 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Toxicology (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Physical Vapour Deposition (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention discloses a method for monitoring a flat-panel display ion implantation device and a jig used for the same. The method for monitoring the flat-panel display ion implantation device includes that mounting a strip-shaped substrate grown with a semiconductor film and performed with primary annealing on the jig; sending the jig provided with the strip-shaped substrate to the ion implantation device to perform ion implantation, wherein when performing the ion implantation, the scanning direction of the ion implantation device is vertical to the long edge of the strip-shaped glass substrate; carrying out secondary annealing on the strip-shaped glass substrate implanted with ions; testing the uniformity and stability parameters of the strip-shaped glass substrate to obtain the uniformity and stability data of the ion implantation device. Through using the strip-shaped glass substrate to perform implantation test, the method for monitoring the flat-panel display ion implantation device can obtain the test result capable of well reflecting the equipment state without testing the whole glass substrate, the cost waste due to using a lot of wafer is avoided, a device for wafer annealing is not needed, and meanwhile, the method can actually simulate the implantation effect of the LTPS, such as activation rate and silicon oxide thickness, and the method for monitoring the flat-panel display ion implantation device is especially suitable for the QC monitoring for large-size devices of the production line.
Description
Technical field
The present invention relates to FPD（Flat Panel Display, flat faced display）Manufacturing technology, is a kind of specifically
The method that the uniformity and stability of ion implantation apparatuses are monitored during manufacture FPD, and the tool used in the monitoring method.
Background technology
With LTPS-AMOLED（Low Temperature Poly Silicon Active-Matrix Organic
Light-Emitting Diode, low temperature polycrystalline silicon active matrix organic light-emitting diode）And LTPS-LCD（Low
Temperature Poly Silicon Liquid Crystal Display, low-temperature polysilicon liquid crystal on silicon displays）Industry send out
Exhibition, ion implantation technology is introduced into flat pannel display industry and plays more and more important role.Flat pannel display ion implantation apparatuses
It is developed the ion implanting for realizing counter plate.
Flat pannel display ion implanting has following feature：1）Big substrate（Injection）Area needs big ion beam
Stream, meets productivity ratio；2）Typically adopt banding beam（Ion beam current）Or wire beam scan mode；3）Inject uneven meeting
Cause device performance uneven, so as to produce aberration（mura）；4）To meet the purpose of batch production, need to keep ion implanting
The stability and concordance of equipment, and the stability of ion implantation device is monitored with concordance with effective means.
Whether volume production line is stable for monitoring ion implantation device, needs regular（Daily or every other day）Carry out quality control（QC）
Experiment, i.e., be monitored to the stability and concordance of ion implantation device.When QC checkings are carried out, prior art is usually to adopt
With one layer of P-Si of growth on the glass substrate（Polysilicon）Layer, then carries out the whole face injection of substrate using ion implantation apparatuses, passes through
Subsequent anneal, then chooses certain amount location point on substrate, is set to monitor using four probe method test P-Si square resistances
Standby state.There is following drawback in this mode：1）Affected larger by substrate quality.Quality of forming film and crystallization quality can to from
Sub- injection technology experimental result detection produces impact, is unfavorable for the stability of long term monitoring ion implantation device. 2）Impurity activation
Temperature limited system.Due to glass substrate（Injection substrate）The easy reason such as chipping and torsional deformation at high temperature, impurity activation
Temperature typically requires to be less than 600 degrees Celsius, causes implanted dopant fully effective can not activate, so as to the detection to injecting effect
Produce error.3）Cycle is long, when needing to expend the machines of equipment such as film-forming apparatus, crystallization equipment.
Another kind of way of prior art is to be noted the incoming ion implantation apparatuses of the silicon chip of certain specification using tool
Enter, rapid thermal annealing mode is led to after the completion of injection silicon chip is annealed（Hot activation）Technique；Choose a fixed point on silicon chip to use
SIMS（Secondary Ion Mass Spectroscopy, secondary ion mass spectrum）Or RS meter（Square resistance measurement instrument）
Measure Deng semiconductor test mode, by detecting that silicon chip is detected to injecting effect indirectly.
Which exist problem be：1）Indirect mode detection injection effect, it is impossible to simulate LTPS glass substrates well
On be actually implanted into effect（Oxidated layer thickness when such as P+ injects).2）RTP is adopted to silicon chip（Rapid Thermal
Process, rapid thermal treatment）Annealing, annealing temperature is higher, and actual LTPS can not possibly utilize more than 800 degrees Celsius of temperature
To anneal, the actual activity ratio of two ways is variant.3）Silicon chip can be only placed at unavoidable between ad-hoc location, and silicon chip during ion implanting
There is size heterogeneity, it is impossible to which the homogeneity of effect is injected in reflection well.
The content of the invention
The technical problem to be solved in the present invention is to provide one kind and can realize directly monitoring, effect is good, accuracy rate is high and into
The method of this low monitoring flat faced display ion implantation device and its tool for using.
In order to solve above-mentioned technical problem, the invention provides a kind of side of monitoring flat faced display ion implantation device
Method, including：
There is the strip substrate that semiconductor film and Jing once anneal to be arranged on tool growth；
The tool for being provided with strip substrate is sent into into ion implantation device to be injected, the scanning side of injection device during injection
To perpendicular to the long side of strip glass substrate；
Double annealing is carried out to the strip glass substrate after the completion of injection；
The homogeneity and stability parameter of test strip glass substrate, obtains the homogeneity and stability of ion implantation device
Data.
Further, the growth has semiconductor film and the strip substrate of annealing is obtained by the following manner：
Annealed in monoblock grown on substrates semiconductor film and once；
By monoblock substrate cut into polylith strip substrate.
Further, the semiconductor film is amorphous silicon film, and post anneal crystalline of the amorphous silicon film Jing is polycrystalline
Silicon fiml.
Further, completed using the method for chemical vapor deposition in monoblock grown on substrates silicon film.
Further, the adopted technique of once annealing is quasi-molecule laser annealing.
Further, the homogeneity of test strip substrate and the method for stability parameter are：The square of test strip substrate
Resistance.
Further, the strip substrate is strip glass substrate.
The present invention also provides a kind of tool of the method for above-mentioned monitoring flat faced display ion implantation device, its feature
In including support plate, the support plate is respectively provided on two sides with multigroup fixture, and the fixture is used to be fixed on the strip substrate
On support plate.
Further, the fixture is slidably disposed on the support plate.
Further, the fixture is bolt, and the support plate is respectively provided on two sides with multiple elongate holes, and the bolt is worn
The elongate holes are crossed, is installed on the support plate with nut screw connection.
The present invention utilizes the very little characteristic of the diversity that ion implantation device injects in a scanning direction, by adopting bar
Shape glass substrate carries out injection test, without the need for testing monolithic glass substrate by draw can reflect very well equipment state test knot
Really.Present invention, avoiding using a large amount of wafer（Wafer）The cost for causing is wasted, and need not add setting for wafer annealing
It is standby, while injection effect of the energy realistic simulation to LTPS, such as activity ratio, silicon oxide thickness, are especially suitable for volume production line large scale
The QC monitorings of equipment.
Description of the drawings
Fig. 1 is the flow chart of the embodiment of method one of the monitoring flat faced display ion implantation device of the present invention.
Fig. 2 is the schematic diagram cut to glass plate in the present invention.
Fig. 3 is an embodiment of the tool that the method for the monitoring flat faced display ion implantation device of the present invention is used
Structural representation.
Fig. 4 is the structural representation of fixture in embodiment illustrated in fig. 3.
In figure：1. support plate, 2. elongate holes, 3. fixture, 31. bolts, 32. nuts, 33. pressing plates, 4. monolithic glass base
Plate, 5. strip glass substrate.
Specific embodiment
Below in conjunction with the accompanying drawings the invention will be further described with specific embodiment, so that those skilled in the art can be with
More fully understand the present invention and can be practiced, but illustrated embodiment is not as a limitation of the invention.
As shown in figure 1, referring also to shown in Fig. 2, the method for the monitoring flat faced display ion implantation device of the present invention, bag
Include：
Semiconductor film is grown on monoblock substrate 4 and is once annealed；
Monoblock substrate 4 is cut into into polylith strip substrate 5；
There is the strip substrate 5 that semiconductor film and Jing once anneal to be arranged on tool 1 growth；
The tool 1 for being provided with strip substrate 5 is sent into into ion implantation device to be injected, the scanning of injection device during injection
Direction is perpendicular to the long side of strip substrate 5；
Double annealing is carried out to the strip substrate 5 after the completion of injection；
The homogeneity and stability parameter of test strip substrate 5, obtains the homogeneity and stability number of ion implantation device
According to.
Wherein, monoblock substrate 4 and strip substrate 5 are preferably glass substrate.In test, one can be only installed on tool
Block bar fills substrate, it is also possible to install polylith bar dress substrate.Can partly lead the growth of monoblock substrate during using polylith strip substrate
Body film layer and after once annealing, then is cut to polylith.And in cutting, line of cut is preferably put down with the minor face of monoblock substrate
OK.For example, by the glass substrate growth semiconductor film of one piece of 1500mm*1300mm and once 1300mm* is cut into after annealing
The strip glass substrate of 100mm, can obtain 15 pieces of strip glass substrates.These strip glass substrates can be in once testing
Use, it is also possible to be divided into and using several times, greatly reduce cost.Described monoblock substrate, refers to and substrate when normally producing
Size identical substrate.Certainly, in other embodiments, it is also possible to which growth is not obtained by the way of cutting has semiconductor film
And the strip glass substrate that Jing once anneals, semiconductor film for example directly can be grown on strip glass substrate and one is carried out
Secondary annealing.Also, when polylith strip substrate is obtained by the way of cutting, it is also not necessarily limited to using monoblock substrate, and can adopts
With the bulk substrate of other sizes, the size of bulk substrate is advisable with producing waste material after cutting.
The semiconductor film can be polysilicon film or amorphous silicon film, it is preferable that first sink on the glass substrate
Product non-crystalline silicon（a-Si）, amorphous silicon film is formed, then make amorphous silicon film crystallize into polysilicon film after annealing（A-Si）, so as to
Can simply be realized using existing process conditions, reduce cost.
Wherein, preferably completed using the method for chemical vapor deposition in monolithic glass grown on substrates semiconductor film, and
Adopted technique of once annealing is preferably quasi-molecule laser annealing.Double annealing can be using laser crystallization annealing, fast speed heat
Annealing, high annealing or furnace anneal etc..Preferably rapid thermal annealing, its annealing time is short, effect is good.
The homogeneity of test strip glass substrate and the method for optimizing of stability parameter are test strip glass substrates
Square resistance, i.e., using the square resistance of four probe test strip substrates；In addition, test can also adopt secondary ion mass spectrum
Test.Preferred method is to test the square resistance of strip glass substrate, its low cost, simple and convenient, and by resistance mode
The homogeneity and stability of expression strip glass substrate, as the expression way on production line, can more accurately be compared
Compared with and control.When the homogeneity and stability parameter of strip substrate 5 is tested, one of strip substrate 5 can be only tested
Homogeneity and stability parameter, it is also possible to the homogeneity and stability parameter of the even whole strip substrates 5 of polylith are tested, to obtain
More accurately data.
As shown in figure 3, the method for the monitoring flat faced display ion implantation device of the present invention used it is the one of tool real
In applying example, the tool includes support plate 1, and support plate is respectively provided on two sides with multigroup fixture 3, and fixture 3 is used for strip glass substrate 5
It is fixed on support plate 1.Preferably, fixture 3 is slidably disposed on support plate 1, is existed so as to adjust strip glass substrate 5
Position on support plate 1.
Embodiment as shown in Figure 4, fixture 3 can include bolt 31, and in support plate 1 multiple elongate holes are respectively provided on two sides with
2, bolt 31 passes through elongate holes 2, coordinates with nut 32 and is installed on support plate 1, and is provided with pressing plate 33 at the top of bolt 31, pressing plate
33 width is fixed on strip glass substrate 5 on support plate 1 by pressing plate 33 more than the diameter of the upper cap nut of bolt 31.
Certainly, fixture can also adopt other structures, for example, an elastic pressuring plate is installed on a slide block, and slide block is embedding
In entering the chute on support plate.It is using elastic pressuring plate that strip glass substrate pressure is solid on support plate, and utilize slide block in chute
Slip can adjust the position of strip glass substrate.Or, strip glass substrate is clipped in by support plate using a Flexible clamp
First-class structure.
Ion implantation device uses the mode of linear scanning when ion implanting is carried out.Namely in injection, ion
The injection head of injection device moves to the other end from one end of glass substrate, forms banding injection band, is then injected into head again in band
Shape injection moves to the other end with adjacent position from one end of glass substrate, forms the first ribbon injection band, two ribbons
Injection band combines closely to form an entirety.Repeat the injection that the action is finally completed monolithic glass substrate.And entirely injecting
During, injection head injects good stability during moving to the other end from one end of glass substrate, unstability is usually
Betide between neighbouring strip injection band.The present invention exactly utilizes the feature, and injection direction is made perpendicular to strip glass in injection
The long side of glass substrate, namely take multiple scan in strip glass substrate and complete injection, so as to realize using condition glass substrate
Can accurately determine the homogeneity and stability parameter of ion implantation device.
It is of the invention can realistic simulation to LTPS injection effect, such as activity ratio, silicon oxide thickness；And the position of glass bar
Can arbitrarily adjust, the injection condition of any position of glass can be tested；Present invention, avoiding using a large amount of wafer cause into
This waste, and the equipment for wafer annealing need not be added, it is especially suitable for volume production line large scale equipment QC monitorings.
Embodiment described above is only the preferred embodiment lifted to absolutely prove the present invention, the protection model of the present invention
Enclose not limited to this.Equivalent substitute or conversion that those skilled in the art are made on the basis of the present invention, in the present invention
Protection domain within.Protection scope of the present invention is defined by claims.
Claims (9)
1. it is a kind of monitoring flat faced display ion implantation device method, it is characterised in that include：
There is the strip substrate that semiconductor film and Jing once anneal to be arranged on tool growth；
The tool for being provided with strip substrate is sent into into ion implantation device to be injected, the scanning direction of injection device is hung down during injection
Directly in the long side of strip substrate；
Double annealing is carried out to the strip substrate after the completion of injection；
The homogeneity and stability parameter of test strip substrate, obtains the homogeneity and stability data of ion implantation device；
Wherein, the tool, including support plate, the support plate is respectively provided on two sides with multigroup fixture, and the fixture is used for institute
State strip substrate to be fixed on support plate.
2. it is according to claim 1 monitoring flat faced display ion implantation device method, it is characterised in that the growth
There is semiconductor film and the strip substrate of annealing is obtained by the following manner：
Annealed in monoblock grown on substrates semiconductor film and once；
By monoblock substrate cut into polylith strip substrate.
3. it is according to claim 1 monitoring flat faced display ion implantation device method, it is characterised in that it is described partly to lead
Body film layer is amorphous silicon film, and post anneal crystalline of the amorphous silicon film Jing is polysilicon film.
4. it is according to claim 2 monitoring flat faced display ion implantation device method, it is characterised in that in monoblock base
Grow silicon film on plate to complete using the method for chemical vapor deposition.
5. it is according to claim 1 monitoring flat faced display ion implantation device method, it is characterised in that it is described once
The adopted technique of annealing is quasi-molecule laser annealing.
6. it is according to claim 1 monitoring flat faced display ion implantation device method, it is characterised in that test strip
The homogeneity of substrate and the method for stability parameter are：The square resistance of test strip substrate.
7. it is according to claim 1 monitoring flat faced display ion implantation device method, it is characterised in that the strip
Substrate is strip glass substrate.
8. it is according to claim 1 monitoring flat faced display ion implantation device method, it is characterised in that the fixation
Part is slidably disposed on the support plate.
9. according to claim 1 or 8 monitoring flat faced display ion implantation device method, it is characterised in that it is described
Fixture is bolt, and the support plate is respectively provided on two sides with multiple elongate holes, and the bolt passes through the elongate holes, with nut
Cooperation is installed on the support plate.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410639950.9A CN104409378B (en) | 2014-11-13 | 2014-11-13 | Method for monitoring flat-panel display ion implantation device and jig used for the same |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410639950.9A CN104409378B (en) | 2014-11-13 | 2014-11-13 | Method for monitoring flat-panel display ion implantation device and jig used for the same |
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| CN104409378A CN104409378A (en) | 2015-03-11 |
| CN104409378B true CN104409378B (en) | 2017-05-17 |
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| CN112687564B (en) * | 2020-12-18 | 2024-01-26 | 北京华卓精科科技股份有限公司 | Method and device for calculating activation rate of doped semiconductor and electronic equipment |
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| JP2005001228A (en) * | 2003-06-11 | 2005-01-06 | Toyo Tire & Rubber Co Ltd | Rubber continuous kneading equipment and rubber continuous kneading method |
| KR100699889B1 (en) * | 2005-12-29 | 2007-03-28 | 삼성전자주식회사 | Method of manufacturing semiconductor device including ion implanting under variable conditions |
| JP2008147402A (en) * | 2006-12-08 | 2008-06-26 | Sharp Corp | Monitoring method |
| CN101728299B (en) * | 2008-10-16 | 2011-12-28 | 家登精密工业股份有限公司 | Device for clamping sheet |
| US8581204B2 (en) * | 2011-09-16 | 2013-11-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus for monitoring ion implantation |
| CN103839858B (en) * | 2014-03-17 | 2017-06-16 | 上海华虹宏力半导体制造有限公司 | The monitoring method and ion injection method of the technological ability of ion implantation apparatus |
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Effective date of registration: 20201216 Address after: No.146 Tianying Road, high tech Zone, Chengdu, Sichuan Province Patentee after: Chengdu CHENXIAN photoelectric Co.,Ltd. Address before: NO.320 Fuchunjiang Road, Optoelectronic Industrial Park, Kunshan Development Zone, Suzhou City, Jiangsu Province Patentee before: Kunshan New Flat Panel Display Technology Center Co.,Ltd. Patentee before: KunShan Go-Visionox Opto-Electronics Co.,Ltd. |