CN104409299B - Processing method of vacuum diode - Google Patents
Processing method of vacuum diode Download PDFInfo
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- CN104409299B CN104409299B CN201410691854.9A CN201410691854A CN104409299B CN 104409299 B CN104409299 B CN 104409299B CN 201410691854 A CN201410691854 A CN 201410691854A CN 104409299 B CN104409299 B CN 104409299B
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- Prior art keywords
- nickel sheet
- stem
- welding
- processing method
- vacuum diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/18—Assembling together the component parts of electrode systems
Abstract
The invention discloses a processing method of a vacuum diode, which comprises the following steps: a. welding one ends of the two first nickel sheets to the anode and bending the first nickel sheets to form an anode support assembly; b. welding one end of a second nickel sheet with a metal lead of the first core column with the lamp filament, and welding the other end of the second nickel sheet with a metal lead at the top of the second core column to form an insulating support; c. welding two first tantalum sheets at the bottom of the cathode in a staggered manner, and respectively welding the first tantalum sheets and the third nickel sheet to form a cathode support assembly; d. welding a third nickel sheet on the metal lead wire at the top of the first core column, welding a cathode on the metal lead wire of the first core column through the bottom of the second tantalum sheet, and welding the other end of the first nickel sheet on the other metal lead wire at the top of the first core column to form a diode basic structure; e. mounting the diode base structure in a glass tube to form a vacuum diode; the upper surface of the cathode is parallel to the lower surface of the anode. The vacuum diode has excellent stability and large emission current density.
Description
Technical field
A kind of the present invention relates to vacuum diode, in particular it relates to processing method of vacuum diode.
Background technology
Cathode assembly is one of critical component of travelling-wave tube, and the emission of cathode assembly is bigger, the property of travelling-wave tube
Can be more excellent.Increasingly improve requirement with high power travelling wave tube, the defect that current cathode emission current density is not enough meets not
Produce and need.Whether the emission in order to detect travelling-wave tube reaches requirement, needs for cathode assembly to be installed on glass
Form vacuum diode in pipe.
The processing method of existing vacuum diode is: negative electrode and anode are separately fixed at brazed assembly insulating base
On, then brazed assembly insulating base is fixed on stem stem, also filament is welded on stem stem simultaneously, finally by stem stem and glass
Glass pipe carries out sealing-in and forms vacuum diode.The processing method of this vacuum diode has process-cycle length, complex process and life
Produce the defect of high cost it is difficult to meet the needs of vacuum diode batch production.
Content of the invention
It is an object of the invention to provide a kind of processing method of vacuum diode, the vacuum two being processed by the method
Pole pipe has excellent stability and emission is big.
To achieve these goals, the invention provides a kind of processing method of vacuum diode, processing method includes:
A, by one end of two the first nickel sheet be welded on anode and bending first nickel sheet formed anode carrier assembly；
B, by the metal lead wire phase welding of one end of multiple second nickel sheet and the bottom of first stem stem with filament, another
End forms insulating support with the metal lead wire phase welding at the top of the second stem stem；
C, two the first tantalum pieces dislocation are welded in negative electrode bottom and two the first tantalum pieces edge respectively with the
One end phase welding of three nickel sheet forms cathode anchor assembly；
On d, the metal lead wire at top that the other end of two the 3rd nickel sheet is welded in the first stem stem and by the second tantalum
The metal lead wire phase of the bottom of negative electrode 7 and the top of the first stem stem 4 is welded by piece 11, then by the other end of two the first nickel sheet
Diode base structure is formed on other metal lead wires at the top being welded in the first stem stem；
E, diode base structure is installed in glass tubing formation vacuum diode；
Wherein, in diode base structure, the upper surface of negative electrode is parallel with anode lower surface.
Preferably, the one end of the first nickel sheet after bending is perpendicular with the other end.
Preferably, two the first nickel sheet are with regard to the axisymmetrical of anode.
Preferably, in stepb, welding meets condition: voltage is 100-120v, and electric current is 800-900ma, conduction time
For 1-3s.
Preferably, the 3rd nickel sheet is perpendicular with the first tantalum piece.
Preferably, in step c, the 3rd nickel sheet is welded on the first tantalum piece, welding meets condition: voltage is 100-
120v, electric current is 500-600ma, and conduction time is 1-3s.
Preferably, in step d, welding meets condition: voltage is 100-120v, and electric current is 600-700ma, conduction time
For 1-3s.
Preferably, one end of glass tubing be uncovered, the other end be closing mouth and the second stem stem be packaged on described uncovered.
Preferably, described welding is bored weldering by tungsten and is carried out.
According to technique scheme, the present invention, will by the first nickel sheet is welded on formation anode carrier assembly on anode
First stem stem and the second stem stem are welded insulating support by the second nickel sheet, and two the first tantalum pieces dislocation are welded in negative electrode
Cathode anchor assembly and anode are then propped up by bottom and respectively the 3rd nickel sheet forms cathode anchor assembly on two the first tantalum pieces
Frame assembly is respectively arranged in formation diode base structure on insulating support, finally diode base structure is packaged in glass tubing
Middle formation vacuum diode.In this vacuum diode, the upper surface of the negative electrode electric field that make two interpolars parallel with anode lower surface divides
Cloth uniformly enables vacuum diode stably emission current；Meanwhile, the insulating support in this vacuum diode can prevent the moon
The phenomenon short circuit between pole, anode and filament occurs；In addition in vacuum diode, each modular construction stably makes it have
Excellent stability and emission is big.
Other features and advantages of the present invention will be described in detail in subsequent specific embodiment part.
Brief description
Accompanying drawing is used to provide a further understanding of the present invention, and constitutes the part of description, with following tool
Body embodiment is used for explaining the present invention together, but is not construed as limiting the invention.In the accompanying drawings:
Fig. 1 is the structural representation of the anode being welded with the first nickel sheet in embodiments of the present invention；
Fig. 2 is the structural representation of the anode carrier assembly in embodiments of the present invention；
Fig. 3 is the structural representation of the vacuum diode processing in the preferred embodiment of the present invention.
Description of reference numerals
1st, anode 2, the first nickel sheet
3rd, the second nickel sheet 4, the first stem stem
5th, the second stem stem 6, the first tantalum piece
7th, negative electrode 8, the 3rd nickel sheet
9th, filament 10, glass tubing
11st, the second tantalum piece
Specific embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.It should be appreciated that this place is retouched
The specific embodiment stated is merely to illustrate and explains the present invention, is not limited to the present invention.
In the present invention, in the case of illustrating on the contrary, " upper and lower, top, bottom " etc. is included in the noun of locality in term
Only represent orientation under normal service condition for this term, or for skilled artisan understands that be commonly called as, and be not construed as right
The restriction of this term.
The invention provides a kind of processing method of vacuum diode, this processing method includes:
A, one end of two the first nickel sheet 2 is welded on anode 1 (see Fig. 1) and bending the first nickel sheet 2 (see Fig. 2) is formed
Anode carrier assembly；
B, by the metal lead wire phase welding of one end of multiple second nickel sheet 3 and the bottom of first stem stem 4 with filament 9,
The other end forms insulating support with the metal lead wire phase welding at the top of the second stem stem 5；
C, the dislocation of two the first tantalum pieces 6 is welded in the bottom of negative electrode 7 and the edge in two the first tantalum pieces 6 welds respectively
Connect one end phase welding formation cathode anchor assembly with the 3rd nickel sheet 8；
On d, the metal lead wire at top that the other end of two the 3rd nickel sheet 8 is welded in the first stem stem 4 and pass through second
The metal lead wire phase of the bottom of described negative electrode 7 and the top of described first stem stem 4 is welded by tantalum piece 11, then by two the first nickel
The other end of piece 2 is welded on other metal lead wires at the top of the first stem stem 4 and forms diode base structure；
E, by diode base structure be installed in glass tubing 10 formed vacuum diode (see Fig. 3)；
Wherein, in described diode base structure, the upper surface of negative electrode 7 is parallel with anode 1 lower surface.
The present invention passes through the first nickel sheet 2 to be welded on formation anode carrier assembly on anode 1, by the first stem stem 4 and second
Stem stem 5 is welded insulating support by the second nickel sheet 3, and two the first tantalum pieces 6 dislocation are welded in the bottom of negative electrode 7 and two
On individual first tantalum piece 6, the 3rd nickel sheet 8 forms cathode anchor assembly respectively, then divides cathode anchor assembly and anode carrier assembly
It is not installed on formation diode base structure on insulating support, finally diode base structure is packaged in glass tubing 10 and is formed
Vacuum diode.The upper surface of negative electrode 7 Electric Field Distribution that make two interpolars parallel with the lower surface of anode 1 in this vacuum diode
Uniformly enable vacuum diode stably emission current；Meanwhile, the insulating support in this vacuum diode can prevent negative electrode
7th, the phenomenon short circuit between anode 1 and filament 9 occurs；In addition, each modular construction stably makes its tool in vacuum diode
There is excellent stability and emission is big.
On metal lead wire for the ease of the top that anode carrier assembly is fixed on the first stem stem 4, and it is easy to ensure the moon
The upper surface of pole 7 is parallel with anode 1 lower surface it is preferable that one end of the first nickel sheet 2 after bending is perpendicular with the other end.This
Sample just can quickly realize the metal lead wire at the top of the first stem stem 4 perpendicular to anode 1, also can further enhance anode simultaneously
1 and first stability between stem stem 4.
In the present invention, in order to improve the stability between anode 1 and the first stem stem 4 further it is preferable that two first
Nickel sheet 2 is with regard to the axisymmetrical of anode 1.
In stepb, the condition of described welding can be welding method conventional in the art, but so that the first nickel
Piece 2 and anode 1 welding even closer it is preferable that in stepb, welding meets condition: voltage is 100-120v, and electric current is
800-900ma, conduction time is 1-3s.
On metal lead wire for the ease of the top that cathode anchor assembly is fixed on the first stem stem 4, and it is easy to ensure the moon
The upper surface of pole 7 parallel with anode 1 lower surface it is preferable that the 3rd nickel sheet 8 is perpendicular with the first tantalum piece 6.So just can be quickly
The metal lead wire at top realizing the first stem stem 4, perpendicular to anode 1, also can further enhance negative electrode 7 and the first stem stem 4 simultaneously
Between stability.
In step c, the condition of described welding can be welding method conventional in the art, but so that the 3rd nickel
Piece 8 and the first tantalum piece 6 welding even closer it is preferable that in step c, the 3rd nickel sheet 8 is welded on the first tantalum piece 6, weldering
Fill sufficient condition: voltage is 100-120v, electric current is 500-600ma, conduction time is 1-3s.
In step d, the condition of described welding can be welding method conventional in the art, but so that each part
Between welding even closer it is preferable that in step d, welding meets condition: voltage is 100-120v, and electric current is 600-
700ma, conduction time is 1-3s.
Meanwhile, the concrete structure of glass tubing can select in wide scope in the present invention, but for the ease of making the moon
It is preferable that one end of glass tubing is uncovered, the other end is closing for the dead in line of the axis of pole carriage assembly and described glass tubing
Mouthful and the second stem stem be packaged on described uncovered.It is highly preferred that glass tubing is straight glass tubing, so this vacuum diode is axle pair
Claim structure so that circuit is evenly distributed in glass tubing so that the density of this vacuum diode stable performance and emission current is big.
In addition, on the basis of the above, welding can be the conventional welding method in any one of this area, but is
It is easy to operate and consider from the effect of welding it is preferable that welding is carried out by tungsten cone weldering.
In addition it is ensured that the upper surface of negative electrode 7 can be parallel with anode 1 lower surface mode more various, but for the ease of
Operation is it is preferable that during installing cathode anchor assembly and anode carrier assembly, ensure negative electrode 7 and anode 1 by gauge
Between the depth of parallelism.
The vacuum diode being prepared by said method after testing, between the upper surface of negative electrode 7 and anode 1 lower surface
Spacing tolerance be ± 0.1mm.By this vacuum diode, under conditions of work is than for 1%, detection obtains this vacuum diode
Emission current reach more than 5.5a, it can thus be appreciated that this vacuum diode has the ability of excellent emission current.
Describe the preferred embodiment of the present invention above in association with accompanying drawing in detail, but, the present invention is not limited to above-mentioned reality
Apply the detail in mode, in the range of the technology design of the present invention, multiple letters can be carried out to technical scheme
Monotropic type, these simple variant belong to protection scope of the present invention.
It is further to note that each particular technique feature described in above-mentioned specific embodiment, in not lance
In the case of shield, can be combined by any suitable means, in order to avoid unnecessary repetition, the present invention to various can
The compound mode of energy no longer separately illustrates.
Additionally, combination in any can also be carried out between the various different embodiment of the present invention, as long as it is without prejudice to this
The thought of invention, it equally should be considered as content disclosed in this invention.
Claims (9)
1. a kind of processing method of vacuum diode is it is characterised in that described processing method includes:
A, one end of two the first nickel sheet (2) is welded on anode (1) is upper and the first nickel sheet (2) described in bending forms anode carrier
Assembly；
B, by the metal lead wire phase weldering of one end of multiple second nickel sheet (3) and the bottom of first stem stem (4) with filament (9)
Connect, the other end forms insulating support with the metal lead wire phase welding at the top of the second stem stem (5)；
C, the dislocation of two the first tantalum pieces (6) is welded in bottom the edge in two described first tantalum pieces (6) of negative electrode (7)
Form cathode anchor assembly with one end phase welding of the 3rd nickel sheet (8) respectively；
On d, the metal lead wire at top that the other end of described two 3rd nickel sheet (8) is welded in described first stem stem (4) and
By the bottom of the second tantalum piece (11), the metal lead wire phase of described negative electrode (7) and the top of described first stem stem (4) is welded, so
Afterwards the other end of described two first nickel sheet (2) is welded on other metal lead wires at top of described first stem stem (4)
Form diode base structure；
E, described diode base structure is installed in glass tubing (10) and forms vacuum diode；
Wherein, in described diode base structure, the upper surface of described negative electrode (7) is parallel with described anode (1) lower surface.
2. the processing method of vacuum diode according to claim 1 is it is characterised in that described first nickel sheet after bending
(2) one end is perpendicular with the other end.
3. the processing method of vacuum diode according to claim 2 is it is characterised in that described two first nickel sheet (2)
Axisymmetrical with regard to described anode (1).
4. it is characterised in that in stepb, described welding is full for the processing method of vacuum diode according to claim 1
Sufficient condition: voltage is 100-120v, electric current is 800-900ma, and conduction time is 1-3s.
5. the processing method of vacuum diode according to claim 1 is it is characterised in that described 3rd nickel sheet (8) and institute
State the first tantalum piece (6) perpendicular.
6. the processing method of vacuum diode according to claim 5 is it is characterised in that in step c, by the described 3rd
Nickel sheet (8) is welded on described first tantalum piece (6), and described welding meets condition: voltage is 100-120v, and electric current is 500-
600ma, conduction time is 1-3s.
7. the processing method of the vacuum diode according to any one in claim 1 is it is characterised in that in step d,
Described welding meets condition: voltage is 100-120v, and electric current is 600-700ma, and conduction time is 1-3s.
8. the processing method of the vacuum diode according to any one in claim 1 is it is characterised in that described glass tubing
One end be uncovered, the other end be closing mouth and described second stem stem (5) be packaged on described uncovered.
9. the processing method of the vacuum diode according to any one in claim 1-8 is it is characterised in that described welding
Bore weldering by tungsten to carry out.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410691854.9A CN104409299B (en) | 2014-11-25 | 2014-11-25 | Processing method of vacuum diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410691854.9A CN104409299B (en) | 2014-11-25 | 2014-11-25 | Processing method of vacuum diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104409299A CN104409299A (en) | 2015-03-11 |
| CN104409299B true CN104409299B (en) | 2017-02-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410691854.9A Active CN104409299B (en) | 2014-11-25 | 2014-11-25 | Processing method of vacuum diode |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2787899B2 (en) * | 1995-03-20 | 1998-08-20 | 日本電気株式会社 | Cold cathode, electron gun and microwave tube using the same |
| JPH11195367A (en) * | 1998-01-06 | 1999-07-21 | Toshiba Corp | Impregnated negative electrode structure, manufacture thereof, electron gun structure, and electron tube |
| CN201838597U (en) * | 2010-09-11 | 2011-05-18 | 安徽华东光电技术研究所 | Testing diode for traveling wave tube cathode |
| CN102226980B (en) * | 2011-05-06 | 2013-04-17 | 安徽华东光电技术研究所 | Aging process for multi-beam traveling wave tube cathode |
| CN202259156U (en) * | 2011-09-30 | 2012-05-30 | 安徽华东光电技术研究所 | Quartz transition glass bulb ultraviolet photoelectric tube |
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Address after: 241000 Emshan Road, Yijiang District, Wuhu City, Anhui Province Patentee after: ANHUI HUADONG PHOTOELECTRIC TECHNOLOGY INSTITUTE Co.,Ltd. Address before: 241000 Huaxia science and Technology Park, Wuhu high tech Industrial Development Zone, Anhui Patentee before: Anhui Huadong Polytechnic Institute |
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