CN104402227A - 高温粘结剂及其制备方法 - Google Patents
高温粘结剂及其制备方法 Download PDFInfo
- Publication number
- CN104402227A CN104402227A CN201410567707.0A CN201410567707A CN104402227A CN 104402227 A CN104402227 A CN 104402227A CN 201410567707 A CN201410567707 A CN 201410567707A CN 104402227 A CN104402227 A CN 104402227A
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- modification
- glass
- temperature agglomerant
- crystalline material
- temperature
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- Granted
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- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 239000011230 binding agent Substances 0.000 title abstract 4
- 239000011521 glass Substances 0.000 claims abstract description 110
- 239000000463 material Substances 0.000 claims abstract description 61
- BDVMTRCCIQHRBL-UHFFFAOYSA-J phosphonato phosphate;titanium(4+) Chemical class [Ti+4].[O-]P([O-])(=O)OP([O-])([O-])=O BDVMTRCCIQHRBL-UHFFFAOYSA-J 0.000 claims abstract description 31
- 229910021494 β-cristobalite Inorganic materials 0.000 claims abstract description 28
- JVPGYYNQTPWXGE-UHFFFAOYSA-N 2-(4-methylphenyl)-1,3-benzothiazole Chemical class C1=CC(C)=CC=C1C1=NC2=CC=CC=C2S1 JVPGYYNQTPWXGE-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000000843 powder Substances 0.000 claims abstract description 23
- 238000012986 modification Methods 0.000 claims description 92
- 230000004048 modification Effects 0.000 claims description 92
- 239000002178 crystalline material Substances 0.000 claims description 55
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 27
- 239000003795 chemical substances by application Substances 0.000 claims description 26
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims description 25
- 238000000498 ball milling Methods 0.000 claims description 23
- 239000007788 liquid Substances 0.000 claims description 22
- 150000001875 compounds Chemical class 0.000 claims description 19
- 239000002994 raw material Substances 0.000 claims description 19
- FLKPEMZONWLCSK-UHFFFAOYSA-N diethyl phthalate Chemical compound CCOC(=O)C1=CC=CC=C1C(=O)OCC FLKPEMZONWLCSK-UHFFFAOYSA-N 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 15
- 238000002844 melting Methods 0.000 claims description 11
- 230000008018 melting Effects 0.000 claims description 11
- -1 pentaerythritol ester Chemical class 0.000 claims description 11
- 239000001856 Ethyl cellulose Substances 0.000 claims description 9
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 9
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 claims description 9
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 9
- 235000019439 ethyl acetate Nutrition 0.000 claims description 9
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 9
- 229920001249 ethyl cellulose Polymers 0.000 claims description 9
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 9
- 239000002253 acid Substances 0.000 claims description 7
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 claims description 7
- 239000003607 modifier Substances 0.000 claims description 6
- 238000010791 quenching Methods 0.000 claims description 6
- 238000011282 treatment Methods 0.000 claims description 6
- 238000011284 combination treatment Methods 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 5
- 238000012216 screening Methods 0.000 claims description 4
- 239000000203 mixture Substances 0.000 abstract description 39
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 15
- 239000013078 crystal Substances 0.000 abstract description 13
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 abstract 2
- BHHYHSUAOQUXJK-UHFFFAOYSA-L zinc fluoride Chemical compound F[Zn]F BHHYHSUAOQUXJK-UHFFFAOYSA-L 0.000 abstract 2
- 229910003069 TeO2 Inorganic materials 0.000 abstract 1
- CNLWCVNCHLKFHK-UHFFFAOYSA-N aluminum;lithium;dioxido(oxo)silane Chemical class [Li+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O CNLWCVNCHLKFHK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical class [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 23
- 229910052710 silicon Inorganic materials 0.000 description 23
- 239000010703 silicon Substances 0.000 description 23
- 239000004576 sand Substances 0.000 description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 9
- 238000001035 drying Methods 0.000 description 8
- 238000005245 sintering Methods 0.000 description 8
- 239000002002 slurry Substances 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 238000009413 insulation Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 239000002893 slag Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- XHGGEBRKUWZHEK-UHFFFAOYSA-L tellurate Chemical compound [O-][Te]([O-])(=O)=O XHGGEBRKUWZHEK-UHFFFAOYSA-L 0.000 description 5
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 4
- 239000006117 anti-reflective coating Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000008187 granular material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229960004418 trolamine Drugs 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910020222 Pb—Si Inorganic materials 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 125000002091 cationic group Chemical group 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000003292 diminished effect Effects 0.000 description 2
- 239000011267 electrode slurry Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000156 glass melt Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- RVPVRDXYQKGNMQ-UHFFFAOYSA-N lead(2+) Chemical compound [Pb+2] RVPVRDXYQKGNMQ-UHFFFAOYSA-N 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000003238 silicate melt Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- XNRNVYYTHRPBDD-UHFFFAOYSA-N [Si][Ag] Chemical compound [Si][Ag] XNRNVYYTHRPBDD-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000011712 cell development Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/24—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/24—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
- C03C8/245—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders containing more than 50% lead oxide, by weight
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Glass Compositions (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410567707.0A CN104402227B (zh) | 2014-10-22 | 2014-10-22 | 高温粘结剂及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410567707.0A CN104402227B (zh) | 2014-10-22 | 2014-10-22 | 高温粘结剂及其制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN104402227A true CN104402227A (zh) | 2015-03-11 |
CN104402227B CN104402227B (zh) | 2017-04-05 |
Family
ID=52639912
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410567707.0A Active CN104402227B (zh) | 2014-10-22 | 2014-10-22 | 高温粘结剂及其制备方法 |
Country Status (1)
Country | Link |
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CN (1) | CN104402227B (zh) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01138150A (ja) * | 1987-11-25 | 1989-05-31 | Ohara Inc | 低融性ガラス |
JP2009221049A (ja) * | 2008-03-17 | 2009-10-01 | Nippon Electric Glass Co Ltd | 封着材料 |
CN103377752A (zh) * | 2012-04-17 | 2013-10-30 | 赫劳斯贵金属北美康舍霍肯有限责任公司 | 用于太阳能电池触点的导电厚膜膏的碲无机反应体系 |
CN103894694A (zh) * | 2014-04-17 | 2014-07-02 | 哈尔滨工业大学 | 一种复合型绿色低熔玻璃钎料连接碳化硅增强铝基复合材料的方法 |
-
2014
- 2014-10-22 CN CN201410567707.0A patent/CN104402227B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01138150A (ja) * | 1987-11-25 | 1989-05-31 | Ohara Inc | 低融性ガラス |
JP2009221049A (ja) * | 2008-03-17 | 2009-10-01 | Nippon Electric Glass Co Ltd | 封着材料 |
CN103377752A (zh) * | 2012-04-17 | 2013-10-30 | 赫劳斯贵金属北美康舍霍肯有限责任公司 | 用于太阳能电池触点的导电厚膜膏的碲无机反应体系 |
CN103894694A (zh) * | 2014-04-17 | 2014-07-02 | 哈尔滨工业大学 | 一种复合型绿色低熔玻璃钎料连接碳化硅增强铝基复合材料的方法 |
Also Published As
Publication number | Publication date |
---|---|
CN104402227B (zh) | 2017-04-05 |
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Effective date of registration: 20170713 Address after: 510670 Guangdong Province, Guangzhou Nanxiang high tech Industrial Development Zone two Road No. 10 Co-patentee after: Guangdong Fenghua Advanced Technology (Holding) Co., Ltd. Patentee after: Fenghua Research Institute (Guangzhou) Co. Ltd. Address before: 526020 Guangdong city of Zhaoqing province Fenghua Fenghua Electronic Industrial City Road No. 18 Patentee before: Guangdong Fenghua Advanced Technology (Holding) Co., Ltd. |
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Effective date of registration: 20201215 Address after: 18 Fenghua electronics industrial town, Fenghua Road, Guangdong, Zhaoqing 526020, China Patentee after: Guangdong Fenghua Advanced Technology Holding Co.,Ltd. Address before: No. 10, Nanxiang 2nd Road, Guangzhou hi tech Industrial Development Zone, Guangdong 510670 Patentee before: FENGHUA RESEARCH INSTITUTE (GUANGZHOU) Co.,Ltd. Patentee before: Guangdong Fenghua Advanced Technology Holding Co.,Ltd. |