CN104393183B - A kind of Organnic electroluminescent device and preparation method thereof - Google Patents

A kind of Organnic electroluminescent device and preparation method thereof Download PDF

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CN104393183B
CN104393183B CN201410654749.8A CN201410654749A CN104393183B CN 104393183 B CN104393183 B CN 104393183B CN 201410654749 A CN201410654749 A CN 201410654749A CN 104393183 B CN104393183 B CN 104393183B
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layer
substrate
light
electrode
conductive layer
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CN104393183A (en
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刘巍
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Kunshan Guoxian Photoelectric Co Ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/85Arrangements for extracting light from the devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/88Dummy elements, i.e. elements having non-functional features
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301Details of OLEDs
    • H10K2102/302Details of OLEDs of OLED structures

Abstract

The invention belongs to field of organic electroluminescence, a kind of described Organnic electroluminescent device, including first substrate, second substrate, some luminescence units, the non-luminous region of each luminescence unit of correspondence have been stacked light-absorption layer and conductive layer.Conductive layer is connected with the second conductive layers make contact in luminescence unit, can improve the electric conductivity of the second electrode lay, weakens IR pressure drops;Light-absorption layer, which is arranged on non-luminous region, can effectively reduce the reflection light of first electrode layer, so as to effectively reduce influence of the ambient light to display effect.The preparation method of the Organnic electroluminescent device, first forms light-absorption layer, conductive layer and luminescence unit on second substrate, is packaged first substrate is fastened on luminescence unit.The second electrode lay of luminescence unit is directly prepared on the electrically conductive, can effectively be fitted with the second electrode lay, is reduced the risk of open circuit, is improved the reliability of connection.Meanwhile, prepared by double plate techniques, effectively reduce man-hour, improve production efficiency.

Description

A kind of Organnic electroluminescent device and preparation method thereof
Technical field
The present invention relates to field of organic electroluminescence, and in particular to a kind of organic electroluminescence hair that can effectively reduce negative electrode sheet resistance Electro-optical device and preparation method thereof.
Background technology
Organnic electroluminescent device (English full name Organic Light Emitting Display, abbreviation OLED) is main Dynamic luminescent device, has the advantages that high-contrast, wide viewing angle, low-power consumption, volume are thinner, is expected to show as main flow flat board of future generation Show technology, be one of the most technologies that attract attention in current flat panel display.
Direction is projected according to the light of Organic Light Emitting Diode in Organnic electroluminescent device, Organnic electroluminescent device can To be divided into bottom emitting device and top emitting device.Because bottom emitting device light will also be by including thin after transparent anode injection The image element circuit layer of film transistor, has a strong impact on the aperture opening ratio and luminous efficiency of device;Therefore, light is directly penetrated from transparent cathode Go out, so as to realize that the top emitting device of high aperture and high-luminous-efficiency is increasingly becoming the master of field of organic electroluminescence research Stream.
In top emitting device, in order to ensure light extraction efficiency, it will usually reduce cathode electrode layer thickness to ensure enough printing opacities Rate;However, causing cathode layer sheet resistance high because cathode electrode layer thickness is relatively thin, IR pressure drops are easily caused, so as to influence display performance.Together When, in order to further improve the luminous efficiency of Organnic electroluminescent device, anode is generally made to the reflection electricity with reflecting layer Pole, can produce a large amount of strong reflections when being used under strong light environment, it is impossible to be clearly seen display content, influence using effect.
The content of the invention
Therefore, to be solved by this invention is that existing top radiation organic EL display device cathode layer sheet resistance is high, with And the problem of can not normally be used under strong light environment, so as to provide a kind of organic electroluminescence that cathode layer sheet resistance is low, reflection light is few Luminous display unit and preparation method thereof.
In order to solve the above technical problems, the technical solution adopted by the present invention is as follows:
Organnic electroluminescent device of the present invention, including first substrate, second substrate and it is arranged on described first Some luminescence units between substrate and the second substrate, the luminescence unit include first electrode layer, the second electrode lay with And the organic luminous layer between the first electrode layer and the second electrode lay is arranged on, the first electrode is placed on described First substrate side, the second electrode is placed on the second substrate side,
The non-luminous region of each luminescence unit of correspondence, is also cascading for the extinction for absorbing reflection light Layer and the conductive layer of the sheet resistance value for reducing the second electrode lay, the conductive layer are set close to the second electrode lay.
The light-absorption layer and/or the conductive layer are continuous net-shaped or dispersal type lattice-like.
The thickness of the light-absorption layer is 100nm~5000nm, and the thickness of the conductive layer is 50nm~500nm.
The transmitance of the light-absorption layer is 1%~15%.
The sheet resistance value of the conductive layer is 10 Ω/~100 Ω/.
Preferably, the conductive layer is graphene layer.
The first substrate is thin-film transistor array base-plate.
The preparation method of Organnic electroluminescent device of the present invention, comprises the following steps:
S1, light-absorption layer and conductive layer are sequentially formed on second substrate;
S2, some luminescence units for covering the light-absorption layer and the conductive layer are formed on the second substrate, it is described Luminescence unit includes first electrode layer, organic luminous layer and the second electrode lay being cascading, and the second electrode lay is leaned on The nearly conductive layer is set, the non-luminous region of the light-absorption layer each luminescence unit corresponding with the conductive layer;
S3, first substrate is set on the luminescence unit, device encapsulation is carried out.
Preferably, the light-absorption layer described in step S1 is prepared by coating, exposure and etching technics.
Preferably, the first substrate is thin-film transistor array base-plate, first electrode layer in each luminescence unit Electrically connected with the electric connection layer in the first substrate.
The above-mentioned technical proposal of the present invention has advantages below compared with prior art:
1. a kind of Organnic electroluminescent device of the present invention, including first substrate, second substrate and it is arranged on Some luminescence units between one substrate and second substrate, along away from first substrate direction, each luminescence unit includes layer successively Folded first electrode layer, organic luminous layer and the second electrode lay set;The second substrate close to the second electrode lay one Side, the non-luminous region of each luminescence unit of correspondence, be also cascading light-absorption layer for absorbing reflection light and Conductive layer, the conductive layer is set close to the second electrode lay.The conductive layer is connected with second conductive layers make contact, energy Enough improve the electric conductivity of the second electrode lay, weaken IR pressure drops;The light-absorption layer is arranged on non-luminous region and can effectively reduced The reflection light of first electrode layer, so as to effectively reduce influence of the ambient light to display effect;Simultaneously as the light-absorption layer Non-luminous region is arranged at the conductive layer, original aperture opening ratio of the Organnic electroluminescent device is not influenceed.
2. the preparation method of Organnic electroluminescent device of the present invention, using double plate techniques, first on second substrate Light-absorption layer, conductive layer and luminescence unit are formed, is packaged being fastened on first substrate on the luminescence unit.It is not only described Conductive layer is connected with second conductive layers make contact, can improve the electric conductivity of the second electrode lay, weakens IR pressure drops, the suction Photosphere, which is arranged on non-luminous region, can effectively reduce the reflection light of first electrode layer, so as to effectively reduce ambient light to aobvious Show the influence of effect;Moreover, the second electrode lay of the luminescence unit is directly prepared on the conductive layer, can be with described second Electrode layer is effectively fitted, and is reduced the risk of open circuit, is improved the reliability of connection.Meanwhile, organic electroluminescence of the present invention The preparation method of light-emitting device uses the element on double plate techniques, i.e., described first substrate and the second substrate to prepare simultaneously, Man-hour is effectively reduced, production efficiency is improved.
Brief description of the drawings
In order that present disclosure is more likely to be clearly understood, specific embodiment and combination below according to the present invention Accompanying drawing, the present invention is further detailed explanation, wherein
Fig. 1 is the installation diagram of Organnic electroluminescent device of the present invention;
Fig. 2 is the preparation flow figure of Organnic electroluminescent device of the present invention.
Reference is expressed as in figure:1- first substrates, 11- electric connection layers, 2- second substrates, 3- luminescence units, 31- One electrode layer, 32- the second electrode lays, 33- organic luminous layers, 4- light-absorption layers, 5- conductive layers.
Embodiment
In order that the object, technical solutions and advantages of the present invention are clearer, below in conjunction with reality of the accompanying drawing to the present invention The mode of applying is described in further detail.
The present invention can be embodied in many different forms, and should not be construed as limited to embodiment set forth herein. Opposite there is provided these embodiments so that the disclosure will be thorough and complete, and the design of the present invention will be fully conveyed to Those skilled in the art, the present invention will only be defined by the appended claims.In the accompanying drawings, for clarity, Ceng He areas can be exaggerated The size and relative size in domain.It should be appreciated that when element such as layer, region or substrate are referred to as " formation " or " set " another element " on " when, the element can be arranged directly on another element, or can also have intermediary element. On the contrary, when element is referred to as on " being formed directly into " or " being set directly at " another element, in the absence of intermediary element.
The present embodiment provides a kind of Organnic electroluminescent device, as shown in figure 1, including first substrate 1, second substrate 2, with And some luminescence units 3 being arranged between first substrate 1 and second substrate 2 (for clarity, illustrate only one in Fig. 1 Individual luminescence unit, it should be appreciated that the luminescence unit can be multiple, and its quantity is not limited), along away from described first The direction of substrate 1, each luminescence unit 3 includes first electrode layer 31, the organic luminous layer 33 and the being cascading Two electrode layers 32.
In the present embodiment, the second substrate 2 is glass substrate, is used as the convertible embodiment of the present invention, described second Substrate 2 is selected from, but not limited to, glass substrate, polymeric substrates, can realize the purpose of the present invention, belongs to the protection of the present invention Scope.
The first substrate 1 is selected from, but not limited to, one in glass substrate, polymeric substrates, thin-film transistor array base-plate Kind, the present embodiment is preferably thin-film transistor array base-plate.
In the present embodiment, the luminescence unit 3 is Organic Light Emitting Diode, and its structure is compared with technology.In order to improve The luminous efficiency of Organnic electroluminescent device is stated, the first electrode layer 31 is preferably reflecting electrode, is selected from, but not limited to, Ag/ One kind in ITO, ITO/Ag/ITO, ITO/Al/ITO, thickness is 100nm~500nm, the preferred ITO/Ag/ITO knots of the present embodiment Structure, thickness is 30nm/120nm/30nm;The second electrode lay 32 is selected from, but not limited to, one kind in Mg/Ag, Al/Ag/Ag, Thickness be 50nm~200nm, the preferred Mg/Ag structures of the present embodiment, thickness is 50nm/50nm;The organic luminous layer 33 is selected from But it is not limited at least one of organic molecule luminescent material of the prior art, polymeric light-emitting materials;It is used as the present invention's Convertible embodiment, the luminescence unit 3 also include hole injection layer, hole transmission layer, electronic barrier layer, hole blocking layer, One or more combinations in electron transfer layer, electron injecting layer.In the present embodiment, the structure of the luminescence unit 3 is ITO/Ag/ITO (first electrode layer, 30nm/120nm/30nm)/CuPc (hole injection layer, 60nm)/TPD (hole transmission layer, 35nm)/CBP (luminescent layer, 50nm):Ir(ppy)3(15%):Ir(piq)3(0.5%)/LiF (electron injecting layer, 35nm)/Mg/ Ag (the second electrode lay, 50nm/50nm).
In the first electrode layer 31 and the first substrate 1 electric connection layer 11 (in the present embodiment, the electric connection layer 11 be the source electrode of thin film transistor (TFT) or drain electrode or the conducting element electrically connected with one of both) electrical connection.
The second substrate 2 is close to the side of the second electrode lay 32, the non-light-emitting area of each luminescence unit 3 of correspondence Domain, being also cascading has light-absorption layer 4 and conductive layer 5, and the conductive layer 5 is set close to the second electrode lay 32;It is described Light-absorption layer 4 is used to absorb reflection light, and the conductive layer 5 is used to reduce the sheet resistance value of the second electrode lay 32.
The light-absorption layer 4 is selected from, but not limited to, organic glue-line containing the alternatively non-transparent material such as carbon black and/or CrO, and thickness is 100nm~5000nm, transmitance is 1%~15%;The present embodiment is preferably containing Cr2O3Photoresist layer, thickness is 2000 to receive Rice, transmitance is 5%.
The conductive layer 5 is selected from, but not limited to, the low-resistance materials such as graphene layer, Ag layers, and thickness is 50nm~500nm, sheet resistance It is worth for 10 Ω/~100 Ω/;The present embodiment is preferably graphene layer, and thickness is 100nm, and sheet resistance value is 30 Ω/.
The light-absorption layer 4 and/or the conductive layer 5 are continuous net-shaped or dispersal type lattice-like, in the present embodiment, described to inhale The non-luminous region of photosphere 4 and the correspondence of the conductive layer 5 luminescence unit 3 forms continuous network structure.The conductive layer 5 Set close to the second electrode lay 32.The conductive layer 5 contacts connection with second conductive layer 32, can improve described The electric conductivity of two electrode layers 32, weakens IR pressure drops, so as to improve the signal control performance of the Organnic electroluminescent device.Institute The reflection light of first electrode layer 31 can effectively be reduced by stating light-absorption layer 4 and being arranged on non-luminous region, so as to effectively reduce environment Influence of the light to display effect.Simultaneously as the light-absorption layer 4 and the conductive layer 5 are arranged at non-luminous region, not shadow Ring original aperture opening ratio of the Organnic electroluminescent device.
The preparation method of described Organnic electroluminescent device, as shown in Fig. 2 comprising the following steps:
S1, by coating, exposure and etching technics prepare the second substrate 2 correspondence luminescence unit 3 non-light-emitting area Domain forms light-absorption layer 4, and conductive layer 5 is formed on the light-absorption layer 4 by chemical vapor deposition, exposure and etching technics.It is described The pattern of light-absorption layer 4 and the conductive layer 5 can be the same or different, and be preferably the continuous net-shaped knot of identical in the present embodiment Structure.
As the convertible embodiment of the present invention, the preparation technology not limited to this of the light-absorption layer 4 and the conductive layer 5, It can be selected according to the property of material.
, can first formation light-absorbing material layer and conduction material on the second substrate 2 as the convertible embodiment of the present invention The bed of material, then by etching technics, while carrying out patterning to light-absorbing material layer and conductive material layer forms the light-absorption layer 4 and institute Conductive layer 5 is stated, can realize that the purpose of the present invention belongs to protection scope of the present invention.
S2, some luminescence units 3 for forming on the second substrate 2 the covering light-absorption layer 4 and the conductive layer 5. The luminescence unit 3 includes the first electrode layer 31, organic luminous layer 33 and the second electrode lay 32 that are cascading, and described the Two electrode layers 32 are set close to the conductive layer 5, and its preparation technology is compared with technology, and here is omitted.The luminescence unit 3 In the second electrode lay 32 directly prepare on the conductive layer 5, can effectively be fitted with the second electrode lay 32, reduce The risk of open circuit, improves the reliability of connection.
S3, the setting first substrate 1 on the luminescence unit 3, carry out device encapsulation.First substrate described in the present embodiment 1 is preferably thin-film transistor array base-plate, and first electrode layer 31 need to be with the thin film transistor (TFT) array base in each luminescence unit 3 Electric connection layer 11 (in the present embodiment, source electrode or drain electrode of the electric connection layer 11 for thin film transistor (TFT)) electrical connection in plate. In Organnic electroluminescent device of the present invention, by light-absorption layer 4 and institute described in the correspondence non-luminous region of luminescence unit 3 The setting of conductive layer 5 is stated, the subregion of first electrode layer 31 can be raised so that the first electrode layer 31 can be with The thin film transistor (TFT) is effectively electrically connected, without setting auxiliary contacts element (brilliant i.e. with film in the first electrode layer 31 The source electrode of body pipe or the conducting element of drain electrode electrical connection), processing step is effectively reduced, production cost is saved.
In addition, the preparation method of Organnic electroluminescent device of the present invention is using double plate techniques, i.e., described first base Element on plate 1 and the second substrate 2 is prepared simultaneously, is effectively reduced man-hour, is improved production efficiency.
Obviously, above-described embodiment is only intended to clearly illustrate example, and the not restriction to embodiment.It is right For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of change or Change.There is no necessity and possibility to exhaust all the enbodiments.And the obvious change thus extended out or Among changing still in protection scope of the present invention.

Claims (8)

1. a kind of Organnic electroluminescent device, including first substrate, second substrate and be arranged on the first substrate with it is described Some luminescence units between second substrate, the luminescence unit includes first electrode layer, the second electrode lay and is arranged on institute The organic luminous layer between first electrode layer and the second electrode lay is stated, the first electrode is placed on the first substrate one Side, the second electrode is placed on the second substrate side, it is characterised in that
The non-luminous region of each luminescence unit of correspondence, be also cascading for absorb the light-absorption layer of reflection light with For the conductive layer for the sheet resistance value for reducing the second electrode lay, the conductive layer is set close to the second electrode lay, described Light-absorption layer and/or conductive layer structure is so that the first electrode layer subregion are raised and are electrically connected with the first substrate Connect;
The light-absorption layer and/or the conductive layer are continuous net-shaped or dispersal type lattice-like;
The first substrate is thin-film transistor array base-plate.
2. Organnic electroluminescent device according to claim 1, it is characterised in that the thickness of the light-absorption layer is 100nm ~5000nm, the thickness of the conductive layer is 50nm~500nm.
3. Organnic electroluminescent device according to claim 2, it is characterised in that the transmitance of the light-absorption layer is 1% ~15%.
4. Organnic electroluminescent device according to claim 2, it is characterised in that the sheet resistance value of the conductive layer is 10 Ω/~100 Ω/.
5. the Organnic electroluminescent device according to claim any one of 1-4, it is characterised in that the conductive layer is graphite Alkene layer.
6. the preparation method of the Organnic electroluminescent device described in a kind of any one of claim 1-5, it is characterised in that including such as Lower step:
S1, light-absorption layer and conductive layer are sequentially formed on second substrate;
S2, some luminescence units for covering the light-absorption layer and the conductive layer are formed on the second substrate, it is described luminous Unit includes first electrode layer, organic luminous layer and the second electrode lay being cascading, and the second electrode lay is close to institute State conductive layer setting, the non-luminous region of the light-absorption layer each luminescence unit corresponding with the conductive layer;
S3, first substrate is set on the luminescence unit, device encapsulation is carried out.
7. the preparation method of Organnic electroluminescent device according to claim 6, it is characterised in that described in step S1 Light-absorption layer is prepared by coating, exposure and etching technics.
8. the preparation method of Organnic electroluminescent device according to claim 6, it is characterised in that the first substrate is First electrode layer is electrically connected with the electric connection layer in the first substrate in thin-film transistor array base-plate, each luminescence unit Connect.
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CN104900682A (en) * 2015-06-10 2015-09-09 昆山国显光电有限公司 Transparent display device, display structure and pixel unit structure thereof
CN109817677A (en) * 2019-01-30 2019-05-28 武汉华星光电半导体显示技术有限公司 A kind of organic light emitting diode display
CN111864105A (en) * 2020-07-09 2020-10-30 武汉华星光电半导体显示技术有限公司 Display panel and preparation method thereof

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