CN104393148B - Manufacturing method for white light-emitting diode and white light emitting diode - Google Patents
Manufacturing method for white light-emitting diode and white light emitting diode Download PDFInfo
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- CN104393148B CN104393148B CN201410596549.1A CN201410596549A CN104393148B CN 104393148 B CN104393148 B CN 104393148B CN 201410596549 A CN201410596549 A CN 201410596549A CN 104393148 B CN104393148 B CN 104393148B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Abstract
The invention discloses a manufacturing method for a white light-emitting diode and the white light-emitting diode, and belongs to the technical field of semiconductors. The method comprises the steps that an array of glass bumps is formed on a substrate, and fluorescent powder is mixed in each glass bump; an AlN film is formed on the array and the substrate; an N-type layer, a light-emitting layer and a P-type layer are grown on the AlN film in turn; a groove which extends to the N-type layer from the P-type layer is arranged on the P-type layer; a metal reflection layer is formed on the P-type layer; and a P electrode is arranged on the metal reflection layer and an N electrode is arranged on the N-type layer. The array of the glass bumps is formed on the substrate, and fluorescent powder is mixed in each glass bump so that the process of fluorescent powder coating in the packaging process after LED chip manufacturing is omitted, the process is simple and convenient, production efficiency of the white LED is enhanced, and miniaturization and integration of the white LED chip are realized.
Description
Technical field
The present invention relates to technical field of semiconductors, the manufacture method and white light of more particularly to a kind of white light emitting diode are sent out
Optical diode.
Background technology
Light emitting diode (Light Emitting Diode, abbreviation LED) is a kind of light emitting semiconductor device, is extensively used
In display lamp, display screen etc..White light LEDs are the third generation electric light sources after electric filament lamp and daylight lamp, and the energy consumption of white light LEDs is only
For 1/8th of electric filament lamp, 1/2nd of fluorescent lamp, the life-span is 100,000 hours, for average family illumination is
" once and for all ".
At present a kind of manufacture method of white light LEDs includes：Make LED chip；LED chip is fixed on support；Will be poly-
Dimethyl silscone and the firming agent for LED encapsulation are allocated by the first predetermined ratio and formed with arogel；According to the second predetermined ratio
Allocate fluorescent material and with arogel；It is coated on the packaging body of LED by the fluorescent material after allotment and with arogel.
During the present invention is realized, inventor has found that prior art at least has problems with：
The manufacture method of existing white light LEDs is needed after the making for completing LED chip, specially completes glimmering in encapsulated phase
The coating of light powder, process is loaded down with trivial details tediously long, and the production efficiency of white light LEDs is relatively low.
The content of the invention
In order to solve, prior art process is loaded down with trivial details tediously long, the relatively low problem of the production efficiency of white light LEDs, the embodiment of the present invention
There is provided the manufacture method and white light emitting diode of a kind of white light emitting diode.The technical scheme is as follows：
On the one hand, a kind of manufacture method of white light emitting diode, the manufacture method bag are embodiments provided
Include：
The array of glass salient point is formed on substrate, mixed with fluorescent material in each described glass salient point；
AlN film is formed on the array and the substrate；
Grow N-type layer, luminescent layer and P-type layer successively in the AlN film；
Open up in the P-type layer from the P-type layer and extend to the groove of the N-type layer；
Metallic reflector is formed in the P-type layer；
P electrode is set on the metallic reflector, N electrode is set in the N-type layer.
In a kind of possible implementation of the present invention, the array that glass salient point is formed on substrate, described in each
Mixed with fluorescent material in glass salient point, including：
The glass material of layer overlay powder on substrate, mixed with fluorescent material in the glass material of the powder；
The glass material is set to be in molten condition by heating up；
The glass material in molten condition is lowered the temperature, makes the glass material be in semi-molten state；
It is using nanometer embossing, the glass material in semi-molten state is graphical, so as in the substrate
The upper array for forming the glass salient point.
Alternatively, described is 900-1300 DEG C by the temperature heated up by the glass material in molten condition, described
It it is 500-1000 DEG C to the temperature that the glass material in molten condition is lowered the temperature.
Alternatively, the glass material is using the one kind in silicate, aluminosilicate, borosilicate, borate, phosphate
Or various make.
In the alternatively possible implementation of the present invention, the maximum gauge of the glass salient point is 1-10 μm, the glass
The height of glass salient point is 1-10 μm, and the minimum range between two glass salient points is 1-20 μm.
In another possible implementation of the invention, the fluorescent material is yttrium-aluminium-garnet aluminate fluorescent powder, nitrogen
Compound fluorescent material or sulphide fluorescent material.
It is described to form AlN film on the array and the substrate in another possible implementation of the invention, bag
Include：
One layer of Al film is deposited on the array and the substrate；
NH is passed through at a set temperature3, nitrogen treatment is carried out to the Al films, so as on the array and the substrate
Form the AlN film.
Alternatively, the design temperature is 500-1500 DEG C.
Alternatively, the thickness of the AlN film is 1-10000nm.
On the other hand, a kind of white light emitting diode is embodiments provided, the white light emitting diode includes
Substrate, stack gradually N-type layer on the substrate, luminescent layer, P-type layer, metallic reflector and to be arranged on the metal anti-
The upper P electrode for penetrating layer and the N electrode being arranged in the N-type layer, the white light emitting diode is provided with from the P-type layer
The groove of the N-type layer is extended to, the white light emitting diode is also including the array and AlN film of glass salient point, the glass
Salient point array and the AlN film are sequentially laminated between the substrate and the N-type layer, mixed with glimmering in each described glass salient point
Light powder.
The beneficial effect that technical scheme provided in an embodiment of the present invention is brought is：
By the array for forming glass salient point on substrate, mixed with fluorescent material in each glass salient point, save and making LED
The process of fluorescent material is coated in encapsulation process after chip, process is simple and convenient, improves the production efficiency of white light LEDs, and
Realize the miniaturization of White-light LED chip and integrated.And compared with being coated on packaging part, glass is formed on substrate convex
The array of point, mixed with fluorescent material in each glass salient point, fluorescent material is closer to the distance with luminescent layer, and the part that luminescent layer sends is blue
Light is easier excitated fluorescent powder and to send send white light after gold-tinted, and another part blue light sent with luminescent layer, reduces
Light loss, improves luminous efficiency.
Description of the drawings
Technical scheme in order to be illustrated more clearly that the embodiment of the present invention, below will be to making needed for embodiment description
Accompanying drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present invention, for
For those of ordinary skill in the art, on the premise of not paying creative work, can be obtaining other according to these accompanying drawings
Accompanying drawing.
Fig. 1 is a kind of flow chart of the manufacture method of white light LEDs that the embodiment of the present invention one is provided；
Fig. 2 a- Fig. 2 g are structural representation of the white light LEDs of the offer of the embodiment of the present invention one during white light LEDs are made
Figure；
Fig. 3 is a kind of structural representation of white light LEDs that the embodiment of the present invention two is provided.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing to embodiment party of the present invention
Formula is described in further detail.
Embodiment one
A kind of manufacture method of white light LEDs is embodiments provided, referring to Fig. 1, the manufacture method includes：
Step 101：The array of glass salient point is formed on substrate, mixed with fluorescent material in each glass salient point.
Fig. 2 a are the structural representation of the LED obtained after execution step 101.Wherein, 1 substrate is represented, 2 represent glass salient point
Array.
Alternatively, substrate can include one or more in sapphire, AlN, such as sapphire, LED is had preferably
Thermal conductivity, improve properties of product.
Specifically, glass salient point can be cone.
Alternatively, the maximum gauge of glass salient point can be 1-10 μm, and the height of glass salient point can be 1-10 μm, two
Minimum range between glass salient point can be 1-20 μm.If maximum gauge of glass salient point etc. exceedes optional scope, may
Array is caused to subside, the growth quality of LED is poor.
Preferably, the maximum gauge of glass salient point can be 1-5 μm, and the height of glass salient point can be 1-5 μm, two glass
Minimum range between glass salient point can be 1-5 μm.
Alternatively, fluorescent material can be yttrium-aluminium-garnet (Yttrium Aluminum Garnet Ultraviolet, letter
Claim YAG) aluminate fluorescent powder, Nitride phosphor or sulphide fluorescent material.
Preferably, fluorescent material can be the YAG in YAG aluminate fluorescent powders：Ce3+ fluorescent material, and the ratio of YAG and Ce3+
Example is more than or equal to 9:1.The brightness of one side white light LEDs is high, launches peak width, and on the other hand the better performances of white light LEDs make
The cost of white light LEDs is relatively low.
Specifically, the ratio of YAG and Ce3+ can be 47:3, it is possible to obtain more satisfactory luminous intensity.
In a kind of implementation of the present embodiment, the step 101 can include：
The glass material of layer overlay powder on substrate, mixed with fluorescent material in the glass material of powder；
Glass material is set to be in molten condition by heating up；
Glass material in molten condition is lowered the temperature, makes glass material be in semi-molten state；
It is using nanometer embossing, the glass material in semi-molten state is graphical, so as to form glass on substrate
The array of glass salient point.
Specifically, semi-molten state is a kind of state between solid and liquid.
It is to be appreciated that fluorescent material is evenly mixed in the glass material of powder.
Adopting nanometer embossing, will be in the glass material of semi-molten state it is graphical after, can carry out at quenching
Reason, the array for making the glass salient point formed on substrate enters solid state from semi-molten state.
It should be noted that intensification is first passed through by glass material in molten condition, then to the glass in molten condition
Material is lowered the temperature, and makes glass material in semi-molten state, primarily to using nanometer embossing, will be in semi-molten state
Glass material it is graphical, so as to the array for forming glass salient point on substrate.
Alternatively, the temperature by heating up by glass material in molten condition can be 900-1300 DEG C, in molten
The temperature for melting the glass material cooling of state can be 500-1000 DEG C.
Alternatively, glass material can adopt the one kind in silicate, aluminosilicate, borosilicate, borate, phosphate
Or various make.
Step 102：AlN film is formed on array and substrate.
Fig. 2 b are the structural representation of the LED obtained after execution step 102.Wherein, 1 substrate is represented, 2 represent glass salient point
Array, 3 represent AlN films.
Alternatively, the thickness of AlN film can be 1-10000nm.If the thickness of AlN film is less than 1nm, LED extensions can be caused
The growth quality of piece is poor, if the thickness of AlN film is more than 10000nm, can cause to waste, and increased the cost of manufacture of LED.
Preferably, the thickness of AlN film can be 1-1000nm, such as 100nm.
In another kind of implementation of the present embodiment, the step 102 can include：
One layer of Al film is deposited on array and substrate；
NH is passed through at a set temperature3, nitrogen treatment is carried out to Al films, so as to form AlN film on array and substrate.
It should be noted that because LED (N-type layer etc.) directly can not grow on the array of glass salient point, because
This needs forms AlN film on array and substrate, is easy to the growth of LED, AlN film to act primarily as the effect of cushion.
Alternatively, design temperature can be 500-1500 DEG C.If design temperature is less than 500 DEG C or higher than 1500 DEG C,
The nitridation of Al films is incomplete, AlN film it is second-rate.
Preferably, design temperature can be 500-1000 DEG C.
Step 103：Grow N-type layer, luminescent layer and P-type layer successively in AlN film.
Fig. 2 c are the structural representation of the LED obtained after execution step 103.Wherein, 1 substrate is represented, 2 represent glass salient point
Array, 3 represent AlN films, 4 represent N-type layers, 5 represent luminescent layers, 6 represent P-type layers.
Specifically, N-type layer can be N-type GaN layer, and P-type layer can be p-type GaN layer.Luminescent layer can include being alternatively formed
InxGa1-xN shell and GaN layer, 0≤x≤0.15.Wherein, when 0≤x≤0.15, luminescent layer sends blue light.
Step 104：Open up in P-type layer from P-type layer and extend to the groove of N-type layer.
Fig. 2 d are the structural representation of the LED obtained after execution step 104.Wherein, 1 substrate is represented, 2 represent glass salient point
Array, 3 represent AlN films, 4 represent N-type layers, 5 represent luminescent layers, 6 represent P-type layers.
In another implementation of the present embodiment, the step 104 can include：
Using plasma ICP lithographic techniques, open up from P-type layer in P-type layer and extend to the groove of N-type layer.
Step 105：Metallic reflector is formed in P-type layer.
Fig. 2 e are the structural representation of the LED obtained after execution step 105.Wherein, 1 substrate is represented, 2 represent glass salient point
Array, 3 represent AlN films, 4 represent N-type layers, 5 represent luminescent layers, 6 represent P-type layers, 7 represent metallic reflectors.
Alternatively, metallic reflector can be adopted one or more in Au, Ag, Al, Pt, Zn and made.Such as Ag, can be with
LED is set to have more stability (heat resistance, corrosion resistance as improved LED).
Alternatively, the thickness of metallic reflector can be 1-10000nm.If the thickness of metallic reflector is less than 1nm, may
Launching effect can be caused poor, if the thickness of metallic reflector is more than 10000nm, can cause to waste, increased the making of LED
Cost.
Preferably, the thickness of metallic reflector can be 1-1000nm, such as 200nm.
In another implementation of the present embodiment, the step 105 can include：
Using electron gun evaporation technology, metallic reflector is formed in P-type layer.
Step 106：P electrode is set on metallic reflector, N electrode is set in N-type layer.
Fig. 2 f are the structural representation of the LED obtained after execution step 106.Wherein, 1 substrate is represented, 2 represent glass salient point
Array, 3 represent AlN films, 4 represent N-type layers, 5 represent luminescent layers, 6 represent P-type layers, 7 represent metallic reflectors, 8 represent P it is electric
Pole, 9 represent N electrode.
In other embodiments, it is also possible to by P electrode pass through metallic reflector, be arranged in P-type layer, the present invention to this not
It is restricted.
It is to be appreciated that by LED wafer it is thinning, cutting, be inverted, you can obtain White-light LED chip.Fig. 2 g are obtain white
The structural representation of light LED chip.Wherein, 1 substrate is represented, 2 represent the array of glass salient point, and 3 represent AlN film, and 4 represent N-type
Layer, 5 represent luminescent layer, and 6 represent P-type layer, and 7 represent metallic reflector, and 8 represent P electrode, and 9 represent N electrode.
The array that the embodiment of the present invention passes through the formation glass salient point on substrate, mixed with fluorescent material in each glass salient point,
The process that fluorescent material is coated in the encapsulation process after LED chip is made is saved, process is simple and convenient, improves white light LEDs
Production efficiency, and realize the miniaturization of White-light LED chip and integrated.And compared with being coated on packaging part, in base
The array of glass salient point is formed on plate, it is closer to the distance with luminescent layer mixed with fluorescent material, fluorescent material in each glass salient point, light
The some blue light that sends of layer is easier excitated fluorescent powder and to send send out after gold-tinted, and another part blue light sent with luminescent layer
Go out white light, reduce light loss, improve luminous efficiency.In addition, the array of glass salient point can change the reflection and refraction of light
Direction, improves the light extraction efficiency of white light emitting diode.
Embodiment two
A kind of white light LEDs are embodiments provided, referring to Fig. 3, the white light LEDs can be provided using such as embodiment one
Manufacture method be made.
Specifically, the white light LEDs include substrate 1, stack gradually array 2, the AlN film 3, N of glass salient point on substrate 1
Type layer 4, luminescent layer 5, P-type layer 6, metallic reflector 7 and it is arranged on the upper P electrode 8 of metallic reflector 7 and is arranged on N-type
N electrode 9 on layer 4.Wherein, mixed with fluorescent material in each glass salient point, the white light LEDs are provided with from P-type layer 6 and extend to N-type
The groove of layer 4.
In the present embodiment, N-type layer 4 can be N-type GaN layer, and P-type layer 6 can be p-type GaN layer.Luminescent layer 5 can be wrapped
Include the In being alternatively formedxGa1-xN shell and GaN layer, 0≤x≤0.15.Wherein, when 0≤x≤0.15, luminescent layer sends blue light.
Alternatively, substrate 1 can include one or more in sapphire, AlN.
Alternatively, glass material can adopt the one kind in silicate, aluminosilicate, borosilicate, borate, phosphate
Or various make.
Alternatively, fluorescent material can be YAG aluminate fluorescent powders, Nitride phosphor or sulphide fluorescent material.
Alternatively, metallic reflector 7 can be adopted one or more in Au, Ag, Al, Pt, Zn and made.
The array that the embodiment of the present invention passes through the formation glass salient point on substrate, mixed with fluorescent material in each glass salient point,
The process that fluorescent material is coated in the encapsulation process after LED chip is made is saved, process is simple and convenient, improves white light LEDs
Production efficiency, and realize the miniaturization of White-light LED chip and integrated.And compared with being coated on packaging part, in base
The array of glass salient point is formed on plate, it is closer to the distance with luminescent layer mixed with fluorescent material, fluorescent material in each glass salient point, light
The some blue light that sends of layer is easier excitated fluorescent powder and to send send out after gold-tinted, and another part blue light sent with luminescent layer
Go out white light, reduce light loss, improve luminous efficiency.In addition, the array of glass salient point can change the reflection and refraction of light
Direction, improves the light extraction efficiency of white light emitting diode.
The foregoing is only presently preferred embodiments of the present invention, not to limit the present invention, all spirit in the present invention and
Within principle, any modification, equivalent substitution and improvements made etc. should be included within the scope of the present invention.
Claims (10)
1. a kind of manufacture method of white light emitting diode, it is characterised in that the manufacture method includes：
The array of glass salient point is formed on substrate, mixed with fluorescent material in each described glass salient point；
AlN film is formed on the array and the substrate；
Grow N-type layer, luminescent layer and P-type layer successively in the AlN film；
Open up in the P-type layer from the P-type layer and extend to the groove of the N-type layer；
Metallic reflector is formed in the P-type layer；
P electrode is set on the metallic reflector, N electrode is set in the N-type layer.
2. manufacture method according to claim 1, it is characterised in that the array that glass salient point is formed on substrate,
Mixed with fluorescent material in each described glass salient point, including：
The glass material of layer overlay powder on substrate, mixed with fluorescent material in the glass material of the powder；
The glass material is set to be in molten condition by heating up；
The glass material in molten condition is lowered the temperature, makes the glass material be in semi-molten state；
It is using nanometer embossing, the glass material in semi-molten state is graphical, so as to shape on the substrate
Into the array of the glass salient point.
3. manufacture method according to claim 2, it is characterised in that described by heating up the glass material in molten
The temperature for melting state is 900-1300 DEG C, and the temperature of the described pair of glass material cooling in molten condition is 500-1000
℃。
4. manufacture method according to claim 2, it is characterised in that the glass material using silicate, aluminosilicate,
One or more in borosilicate, borate, phosphate is made.
5. manufacture method according to claim 1, it is characterised in that the maximum gauge of the glass salient point is 1-10 μm,
The height of the glass salient point is 1-10 μm, and the minimum range between two glass salient points is 1-20 μm.
6. manufacture method according to claim 1, it is characterised in that the fluorescent material is yttrium-aluminium-garnet thioaluminate phosphor
Powder, Nitride phosphor or sulphide fluorescent material.
7. manufacture method according to claim 1, it is characterised in that described to be formed on the array and the substrate
AlN film, including：
One layer of Al film is deposited on the array and the substrate；
NH is passed through at a set temperature3, nitrogen treatment is carried out to the Al films, so as to be formed on the array and the substrate
The AlN film.
8. manufacture method according to claim 7, it is characterised in that the design temperature is 500-1500 DEG C.
9. manufacture method according to claim 7, it is characterised in that the thickness of the AlN film is 1-10000nm.
10. a kind of white light emitting diode, the white light emitting diode includes substrate, stacks gradually N on the substrate
Type layer, luminescent layer, P-type layer, metallic reflector and it is arranged on the upper P electrode of the metallic reflector and is arranged on the N
N electrode on type layer, the white light emitting diode is provided with from the P-type layer groove for extending to the N-type layer, its feature
It is that the white light emitting diode is also including the array and AlN film, the glass salient point array and the AlN of glass salient point
Film is sequentially laminated between the substrate and the N-type layer, mixed with fluorescent material in each described glass salient point.
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| CN201410596549.1A CN104393148B (en) | 2014-10-29 | 2014-10-29 | Manufacturing method for white light-emitting diode and white light emitting diode |
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| CN201410596549.1A CN104393148B (en) | 2014-10-29 | 2014-10-29 | Manufacturing method for white light-emitting diode and white light emitting diode |
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| CN104393148B true CN104393148B (en) | 2017-04-26 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1981389A (en) * | 2004-06-23 | 2007-06-13 | 罗姆股份有限公司 | White light-emitting device and method for producing same |
| CN202327728U (en) * | 2011-11-14 | 2012-07-11 | 杭州赛明照明电器有限公司 | High-coloration high-power white-light LED lamp |
| CN203288649U (en) * | 2013-06-14 | 2013-11-13 | 河北亮维智能光电技术有限公司 | A LED-lamp-used fluorescent powder glass membrane for converting blue light into white light |
| CN104112797A (en) * | 2014-06-19 | 2014-10-22 | 华灿光电(苏州）有限公司 | White light-emitting diode manufacturing method |
-
2014
- 2014-10-29 CN CN201410596549.1A patent/CN104393148B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1981389A (en) * | 2004-06-23 | 2007-06-13 | 罗姆股份有限公司 | White light-emitting device and method for producing same |
| CN202327728U (en) * | 2011-11-14 | 2012-07-11 | 杭州赛明照明电器有限公司 | High-coloration high-power white-light LED lamp |
| CN203288649U (en) * | 2013-06-14 | 2013-11-13 | 河北亮维智能光电技术有限公司 | A LED-lamp-used fluorescent powder glass membrane for converting blue light into white light |
| CN104112797A (en) * | 2014-06-19 | 2014-10-22 | 华灿光电(苏州）有限公司 | White light-emitting diode manufacturing method |
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