CN104380229A - Touch panel and display apparatus provided with touch panel - Google Patents
Touch panel and display apparatus provided with touch panel Download PDFInfo
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- CN104380229A CN104380229A CN201380033454.2A CN201380033454A CN104380229A CN 104380229 A CN104380229 A CN 104380229A CN 201380033454 A CN201380033454 A CN 201380033454A CN 104380229 A CN104380229 A CN 104380229A
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/13338—Input devices, e.g. touch panels
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0445—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04107—Shielding in digitiser, i.e. guard or shielding arrangements, mostly for capacitive touchscreens, e.g. driven shields, driven grounds
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04111—Cross over in capacitive digitiser, i.e. details of structures for connecting electrodes of the sensing pattern where the connections cross each other, e.g. bridge structures comprising an insulating layer, or vias through substrate
Abstract
Provided is a configuration of a touch panel having improved reliability by preventing wiring from corroding. This touch panel is provided with: a substrate (10); a sensor electrode, which is formed on the substrate (10), and which is configured from an oxide conductive film; wiring (161) electrically connected to the sensor electrode; and a protection film (14) formed to cover the wiring (161). The protection film (14) includes: a first protection film (141) configured from silicon nitride; a second protection film (142), which is formed on the first protection film (141), and which is configured from silicon nitride having a refractive index lower than that of the first protection film (141); and a third protection film (143), which is formed on the second protection film (142), and which is configured from silicon nitride having a refractive index higher than that of the second protection film (142). The thickness of the second protection film (142) is equal to or more than the sum of the thickness of the first protection film (141) and that of the third protection film (143).
Description
Technical field
The present invention relates to the display device of touch panel and band touch panel, more specifically, relate to the touch panel of electrostatic capacitance mode and the display device of band touch panel.
Background technology
Touch panel and display device use overlappingly.Therefore, the electrode film (sensing electrode) being formed at viewing area uses tin indium oxide (ITO:Indium Tin Oxide) or indium zinc oxide (IZO:Indium Zinc Oxide) etc. to have the oxide conductive film of light transmission.
On the other hand, in the frame region beyond viewing area, as distribution, sometimes use the metal film that resistance is low.But metal film can be corroded by impurity such as moisture.Thus, there is the situation of to grade from the surperficial saturated with water of touch panel impurity, corroding metal film.This corrosion becomes the main cause of the long-term reliability decrease making distribution.
The touch panel of electrostatic capacitance mode is recorded in Japanese Unexamined Patent Publication 2011-13725 publication.This touch panel possesses: the distribution diaphragm formed with covering winding distribution; With the planarization film that formed of coated electrode and winding distribution ground.According to above-mentioned document, distribution diaphragm and planarization film by using the print process of polysiloxane, acrylic resin and acrylic monomers etc. to be formed in formation material.According to above-mentioned document; distribution diaphragm and planarization film, when using polysiloxane to be formed, become the inorganic insulating membrane be made up of monox; when using acrylic resin or acrylic monomers to be formed, become the organic insulating film be made up of resin material.
Summary of the invention
In said structure, distribution diaphragm and planarization film are formed by monox or resin.But monox and resin are all that moisture-proof is poor, and barrier propterty is insufficient.Therefore, said structure has problems in the reliability of distribution.
As the film of protection distribution, preferably use the silicon nitride film that barrier propterty is high.But the adaptation between silicon nitride film and oxide conductive film is poor, easily peels off when being formed on oxide conductive film.
The object of the invention is to, obtain the corrosion preventing distribution, improve the structure of the touch panel of reliability.
Touch panel disclosed herein comprises: substrate; Be formed on aforesaid substrate, the sensing electrode be made up of oxide conductive film; The distribution be electrically connected with above-mentioned sensing electrode; With cover above-mentioned distribution and the diaphragm that formed.Said protection film comprises: the first diaphragm be made up of silicon nitride; Be formed on above-mentioned first diaphragm, second diaphragm that silicon nitride be made up of little with above-mentioned first diaphragm phase specific refractivity; Be formed on above-mentioned second diaphragm, three diaphragm that silicon nitride be made up of large with above-mentioned second diaphragm phase specific refractivity, the thickness of above-mentioned second diaphragm is more than the summation of the thickness of above-mentioned first diaphragm and above-mentioned 3rd diaphragm.
According to the present invention, the corrosion preventing distribution can be obtained, improve the structure of the touch panel of reliability.
Accompanying drawing explanation
Fig. 1 is the cut-open view of the schematic configuration of the display device of the band touch panel represented in an embodiment of the invention.
Fig. 2 is the vertical view of the schematic configuration of the touch panel represented in the first embodiment of the present invention.
Fig. 3 is the cut-open view of each line along the A-A ' line in Fig. 2, B-B ' line, C-C ' line and D-D ' line.
Fig. 4 extracts a vertical view carrying out representing in X electrode out.
Fig. 5 extracts a vertical view carrying out representing in Y electrode out.
Fig. 6 A is the cut-open view of the manufacture method for illustration of the touch panel in the first embodiment of the present invention.
Fig. 6 B is the cut-open view of the manufacture method for illustration of the touch panel in the first embodiment of the present invention.
Fig. 6 C is the cut-open view of the manufacture method for illustration of the touch panel in the first embodiment of the present invention.
Fig. 6 D is the cut-open view of the manufacture method for illustration of the touch panel in the first embodiment of the present invention.
Fig. 6 E is the cut-open view of the manufacture method for illustration of the touch panel in the first embodiment of the present invention.
Fig. 7 is the vertical view of the schematic configuration of the touch panel representing comparative example.
Fig. 8 is the cut-open view of each line along the A-A ' line in Fig. 7, B-B ' line, C-C ' line and D-D ' line.
Fig. 9 is the figure of the membrane stress schematically showing oxide conductive film in comparative example and be formed at the diaphragm on oxide conductive film.
Figure 10 is oxide conductive film and be formed at the figure of membrane stress of the diaphragm on oxide conductive film in other modes schematically showing comparative example.
Figure 11 is the figure of the membrane stress schematically showing oxide conductive film in the first embodiment of the present invention and be formed at the diaphragm on oxide conductive film.
Figure 12 is the vertical view of the schematic configuration of the touch panel represented in the second embodiment of the present invention.
Figure 13 is the cut-open view of each line along the A-A ' line in Figure 12, B-B ' line, C-C ' line and D-D ' line.
Figure 14 A is the cut-open view of the manufacture method for illustration of the touch panel in the second embodiment of the present invention.
Figure 14 B is the cut-open view of the manufacture method for illustration of the touch panel in the second embodiment of the present invention.
Figure 14 C is the cut-open view of the manufacture method for illustration of the touch panel in the second embodiment of the present invention.
Figure 15 is the vertical view of the schematic configuration of the touch panel represented in the 3rd embodiment of the present invention.
Figure 16 is the cut-open view of each line along the A-A ' line in Figure 15, B-B ' line, C-C ' line and D-D ' line.
Figure 17 A is the cut-open view of the manufacture method for illustration of the touch panel in the 3rd embodiment of the present invention.
Figure 17 B is the cut-open view of the manufacture method for illustration of the touch panel in the 3rd embodiment of the present invention.
Figure 17 C is the cut-open view of the manufacture method for illustration of the touch panel in the 3rd embodiment of the present invention.
Figure 17 D is the cut-open view of the manufacture method for illustration of the touch panel in the 3rd embodiment of the present invention.
Figure 17 E is the cut-open view of the manufacture method for illustration of the touch panel in the 3rd embodiment of the present invention.
Figure 18 is the vertical view of the schematic configuration of the touch panel represented in the 4th embodiment of the present invention.
Figure 19 is the cut-open view of each line along the A-A ' line in Figure 18, B-B ' line, C-C ' line and D-D ' line.
Figure 20 A is the cut-open view of the manufacture method for illustration of the touch panel in the 4th embodiment of the present invention.
Figure 20 B is the cut-open view of the manufacture method for illustration of the touch panel in the 4th embodiment of the present invention.
Figure 20 C is the cut-open view of the manufacture method for illustration of the touch panel in the 4th embodiment of the present invention.
Figure 21 is the figure of the membrane stress schematically showing oxide conductive film in the 4th embodiment of the present invention and be formed at the diaphragm on oxide conductive film.
Figure 22 is the vertical view of the schematic configuration of the touch panel represented in the 5th embodiment of the present invention.
Figure 23 is the cut-open view of each line along the A-A ' line in Figure 22, B-B ' line, C-C ' line and D-D ' line.
Figure 24 A is the cut-open view of the manufacture method for illustration of the touch panel in the 5th embodiment of the present invention.
Figure 24 B is the cut-open view of the manufacture method for illustration of the touch panel in the 5th embodiment of the present invention.
Figure 24 C is the cut-open view of the manufacture method for illustration of the touch panel in the 5th embodiment of the present invention.
Figure 24 D is the cut-open view of the manufacture method for illustration of the touch panel in the 5th embodiment of the present invention.
Figure 24 E is the cut-open view of the manufacture method for illustration of the touch panel in the 5th embodiment of the present invention.
Embodiment
The touch panel of an embodiment of the invention possesses: substrate; Be formed on aforesaid substrate, the sensing electrode be made up of oxide conductive film; The distribution be electrically connected with above-mentioned sensing electrode; With cover above-mentioned distribution and the diaphragm that formed.Said protection film comprises: the first diaphragm be made up of silicon nitride; Be formed on above-mentioned first diaphragm, second diaphragm that silicon nitride be made up of little with above-mentioned first diaphragm phase specific refractivity; Be formed on above-mentioned second diaphragm; three diaphragm that silicon nitride be made up of large with above-mentioned second diaphragm phase specific refractivity, the thickness of above-mentioned second diaphragm is more than the summation of the thickness of above-mentioned first diaphragm and above-mentioned 3rd diaphragm (the first structure).
According to said structure, the diaphragm covering distribution is made up of silicon nitride film.The moisture-penetrability of silicon nitride film is low, and barrier propterty is high.Therefore, it is possible to obtain distribution to be not easy corrosion, the structure that reliability is high.
Silicon nitride film has refractive index larger, and membrane stress more becomes the trend of compression (compressive) stress.The membrane stress of oxide conductive film is generally stretching (tensile) stress.Therefore, when forming the high silicon nitride film of refractive index on oxide conductive film, due to the difference of membrane stress, silicon nitride film becomes easy stripping.On the other hand, the reactivity of the silicon nitride film that refractive index is little is high.Therefore, when the silicon nitride film that oxide conductive film and refractive index are little contacts, there is situation about going bad due to redox reaction.In addition, when the silicon nitride film that refractive index is little exposes in an atmosphere, there is silicon nitride film and rotten situation occurs.Specifically, silicon nitride film becomes silicon oxynitride film, and barrier propterty declines, and oxide conducting film metallization and transmissivity decline.
According to said structure, diaphragm comprises: the first diaphragm; Second diaphragm little with the first diaphragm phase specific refractivity; And three diaphragm large with the second diaphragm phase specific refractivity.That is, the second diaphragm that refractive index is relatively little is refracted the first relatively large diaphragm of rate and the clamping of the 3rd diaphragm.Therefore, reactive the second relatively high diaphragm does not expose.Further, by making the thickness of the second diaphragm be more than the summation of the thickness of the first diaphragm and the 3rd diaphragm, the membrane stress of diaphragm entirety can be adjusted to drawing stress direction.Thus, even if form diaphragm contiguously with oxide conductive film, adaptation also can be made good.
In above-mentioned first structure, preferred said protection film contacts with above-mentioned sensing electrode (the second structure).
According to said structure, when forming diaphragm, not needing to form middle layer between sensing electrode and diaphragm, or the part contacted with sensing electrode is removed by patterning.Therefore, it is possible to simplify manufacturing process.
In above-mentioned first structure or the second structure, also can be: the refractive index of above-mentioned first diaphragm is more than 1.805 that the refractive index of above-mentioned second diaphragm is less than 1.805, and the refractive index of above-mentioned 3rd diaphragm is more than 1.805 (the 3rd structures).
In above-mentioned first structure in the arbitrary structure in the 3rd structure, preferably: the membrane stress of above-mentioned second diaphragm is drawing stress, and the membrane stress of the entirety of said protection film is drawing stress (the 4th structure).
The membrane stress of oxide conductive film is generally drawing stress.According to said structure, the membrane stress of the entirety of diaphragm becomes drawing stress.Be one species by the membrane stress of the membrane stress and oxide conductive film that make diaphragm, the adaptation of diaphragm and oxide conductive film can be made further to improve.
In above-mentioned first structure in the 4th structure, preferably: the thickness of above-mentioned first diaphragm is below 100nm, and the thickness of above-mentioned 3rd diaphragm is below 100nm (the 5th structure).
The thickness of the second diaphragm is more than the summation of the thickness of the first diaphragm and the 3rd diaphragm.In order to make overall thickness thin, preferably the thickness of the first diaphragm and the 3rd diaphragm is thin.Specifically, preferably structure described above is such, and the thickness of the first diaphragm is below 100nm, and the thickness of the second diaphragm is below 100nm.
In above-mentioned first structure in the arbitrary structure in the 5th structure; preferred: said protection film also comprises the 4th diaphragm be made up of monox; above-mentioned first diaphragm is formed on above-mentioned 4th diaphragm, and the thickness of above-mentioned second diaphragm is more than the summation of the thickness of above-mentioned first diaphragm, above-mentioned 3rd diaphragm and above-mentioned 4th diaphragm (the 6th structure).
According to said structure, diaphragm also comprises the 4th diaphragm be made up of the monox good with oxide conductive film adaptation.Thereby, it is possible to make the adaptation of oxide conductive film and diaphragm improve further.
In above-mentioned first structure in the arbitrary structures in the 6th structure, also can be: above-mentioned sensing electrode comprises: the first electrode be formed extended at both sides in one direction; With the second electrode that the direction intersected in the direction extended with above-mentioned first electrode is formed extended at both sides, above-mentioned second electrode comprises: multiple island electrode; With the connecting portion be connected to each other by above-mentioned island electrode, said protection film is formed at the layer (the 7th structure) between above-mentioned first electrode and above-mentioned connecting portion.
In above-mentioned first structure in the arbitrary structure in the 6th structure, also can be: said protection film is formed at the layer (the 8th structure) away from aforesaid substrate compared with above-mentioned sensing electrode.
The display device of the band touch panel of an embodiment of the invention possesses: liquid crystal indicator; With above-mentioned first structure to the touch panel (first structure of display device of band touch panel) of the arbitrary structure in the 8th structure.
[embodiment]
Below, with reference to accompanying drawing, embodiments of the present invention are described in detail.Its explanation is not repeated to same in figure or considerable part mark prosign.In addition, in order to make explanation understandable, in the accompanying drawing of following institute reference, structure is simplified or schematically shows sometimes, sometimes clipped component parts.In addition, the engineer's scale between the component parts represented in each figure may not represent actual engineer's scale.
[overall structure]
Fig. 1 is the cut-open view of the schematic configuration of the display device 100 of the band touch panel represented in an embodiment of the invention.Display device 100 with touch panel possesses touch panel 1, colored filter substrate 101, TFT (Thin Film Transistor: thin film transistor (TFT)) substrate 102, seal 103, liquid crystal 104, polaroid 105 and 106 and stickers 107.
Colored filter substrate 101 and TFT substrate 102 relatively configure mutually.Be formed with seal 103 at the circumference of colored filter substrate 101 and TFT substrate 102, be sealed with liquid crystal 104 in inside.Touch panel 1 is fitted on the face of the side contrary with liquid crystal 104 side of colored filter substrate 101 by stickers 107.The face of the side contrary with colored filter substrate 101 side of touch panel 1 is configured with polaroid 105.Polaroid 106 is configured with the face of liquid crystal 104 side opposite side in TFT substrate 102.
Touch panel 1 possesses substrate and sensing electrode, and its detailed construction will describe later.Electrostatic capacitance is formed between sensing electrode and the finger etc. close to touch panel 1.Touch panel 1, according to the change of this electrostatic capacitance, detects the position of finger etc.
Colored filter substrate 101 possesses the substrate 1011 of insulativity, colored filter 1012 and common electrode 1013.Common electrode 1013 is formed uniformly in the roughly whole face of the viewing area of substrate 1011.
TFT substrate 102 possesses the substrate 1021 of insulativity, pixel electrode 1022 and not shown TFT.Pixel electrode 1022 and TFT are rectangular formation on substrate 1021.In addition, as TFT, the material comprising amorphous silicon, IZGO (Indium Zinc Gallium Oxide: indium gallium zinc oxide) can be used, preferably use the material comprising the large IZGO of electron mobility.
The TFT of the display device 100 drive TFT substrate 102 with touch panel, produces electric field between pixel electrode 1022 and common electrode 1013, controls the orientation of liquid crystal 104.Liquid crystal indicator 100, by the orientation of liquid crystal 104 and polaroid 105 and 106, controls the transmission of light and non-transmissive by each pixel.Thus, the display device 100 of touch panel is with to show image.
Above, the schematic configuration of the display device 100 of band touch panel is described.In the display device 100 of band touch panel, polaroid 105 is configured on the face in outside (side contrary with colored filter substrate 101 side) of touch panel 1.But the display device 100 of band touch panel can be also following structure: be configured in by polaroid 105 on the face of the side contrary with liquid crystal 104 side of colored filter substrate 101, and touch panel 1 of fitting thereon.
[structure of touch panel]
[the first embodiment]
Below, the structure of touch panel 1 is described in detail.Fig. 2 is the vertical view of the schematic configuration of the touch panel 1 schematically shown in the first embodiment of the present invention.Fig. 3 is the cut-open view of each line along the A-A ' line in Fig. 2, B-B ' line, C-C ' line and D-D ' line.Touch panel 1 possesses substrate 10, X electrode 11, Y electrode 12, terminal 13, diaphragm 14, dielectric film 15, distribution 161, ground connection distribution 162 and external film (overcoat film) 17.
Substrate 10 is such as glass substrate or transparent resin film.Substrate 10 can be the substrate of the coated passivating film in surface etc.X electrode 11, Y electrode 12, terminal 13, diaphragm 14, dielectric film 15, distribution 161, ground connection distribution 162 and external film 17 are formed on a face of substrate 10.
Fig. 4 extracts a vertical view carrying out representing in X electrode 11 out.X electrode 11 comprises: along multiple island electrodes 111 of a direction configuration; With the connecting portion 112 that adjacent island electrode 111 is connected to each other.X electrode 11 also comprises the connecting portion 113 for being connected with distribution 161 in one end of its bearing of trend.Island electrode 111 and connecting portion 112 and 113 form as one.
Fig. 5 extracts a vertical view carrying out representing in Y electrode 12 out.Y electrode 12 comprises: the multiple island electrodes 121 configured along the direction intersected with X electrode 11; With the connecting portion 122 that adjacent island electrode 121 is connected to each other.Y electrode 12 also comprises the connecting portion 123 for being connected with distribution 161 in one end of its bearing of trend.Island electrode 121 and connecting portion 122 and 123 as described later, are formed in different operations.
X electrode 11 and Y electrode 12 are formed by the oxide conductive film possessing light transmission and electric conductivity.X electrode 11 and Y electrode 12 are such as ITO or IZO.
Go on to say referring again to Fig. 2 and Fig. 3.The connecting portion 122 of Y electrode 12 is formed in the layer different from the island electrode 121 of X electrode 11 and Y electrode 12 across diaphragm 14 and dielectric film 15.The contact hole 14a that island electrode 121 and the connecting portion 122 of Y electrode 12 are formed through through diaphragm 14 and dielectric film 15 contacts.According to this structure, X electrode 11 and Y electrode 12 can be made to intersect in the mode of not conducting each other.
In addition, the connecting portion 123 of Y electrode 12 is also formed in the layer different from the island electrode 121 of X electrode 11 and Y electrode 12.The contact hole 14b that island electrode 121 and the connecting portion 123 of Y electrode 12 are formed through through diaphragm 14 and dielectric film 15 ground contacts.In addition, connecting portion 123 is formed in the layer all different with ground connection distribution 162 from distribution 161.The contact hole 14c that connecting portion 123 is formed through through diaphragm 14 and dielectric film 15 ground with distribution 161 contacts.According to this structure, Y electrode 12 and ground connection distribution 162 can be made to intersect in the mode of not conducting each other.
Terminal 13 is formed near the circumference of substrate 10.Terminal 13 is connected with not shown driving circuit through such as FPC (Flexible Prited Circuit: flexible printed circuit).Therefore, terminal 13 exposes from diaphragm 14, dielectric film 15 and external film 17.Therefore, terminal 13 is preferably formed with the material that corrosion stability is high.Terminal 13 is such as ITO or IZO.
X electrode 11 is electrically connected with terminal 13 by distribution 161, is electrically connected by Y electrode 12 with terminal 13.More specifically, the distribution 161 that X electrode 11 and terminal 13 connect is contacted with the connecting portion 113 of terminal 13 and X electrode 11.In addition, the distribution 161 that Y electrode 12 and terminal 13 connect is contacted with the connecting portion 123 of terminal 13 and Y electrode 12.In addition, as mentioned above, distribution 161 contacts through contact hole 14c with connecting portion 123.Ground connection distribution 162 is only connected with terminal 13, and is not connected with X electrode 11 and Y electrode 12.Ground connection distribution 162 works as the shielding line covering electromagnetic noise.Distribution 161 and ground connection distribution 162 are such as metal film.
To cover the mode of the part of terminal 13, X electrode 11, the island electrode 121 of Y electrode 12, distribution 161 and ground connection distribution 162, be formed with diaphragm 14 and dielectric film 15 successively from substrate 10 side.When diaphragm 14 and dielectric film 15 are to overlook, the mode of overlap is formed.Diaphragm 14 is made up of silicon nitride.Dielectric film 15 by such as comprising acryl resin, the photoresist of novolac resin forms.
The diaphragm 14 of present embodiment is the 3-tier architecture sequentially laminated with the first diaphragm 141, second diaphragm 142 and the 3rd diaphragm 143 from substrate 10 side.Herein, the refractive index of the second diaphragm 142 is less than the refractive index of the first diaphragm 141, and the refractive index of the 3rd diaphragm 143 is greater than the refractive index of the second diaphragm 142.In other words, the refractive index of the second diaphragm 142 is less than the refractive index of the first diaphragm 141 and the 3rd diaphragm 143.Such as, the refractive index of the first diaphragm 141 and the 3rd diaphragm 143 is that the refractive index of the more than 1.805, second diaphragm 142 is less than 1.805.
The thickness of the second diaphragm 142 is more than the summation of the thickness of the first diaphragm 141 and the 3rd diaphragm 143.In addition, the thickness of the first diaphragm 141 and the 3rd diaphragm 143 is preferably thin, such as, be respectively below 100nm.
Roughly whole ground of external film 17 covered substrate 10 is formed.Wherein, as mentioned above, a part for terminal 13 is not covered by external film 17 and exposes.External film 17 is formed by the insulating material of light transmission.External film 17 can be the material of organic, also can be the material of mineral-type.
[manufacture method of touch panel 1]
Below, the manufacture method of touch panel 1 is described with reference to Fig. 6 A ~ Fig. 6 E.In addition, Fig. 6 A ~ Fig. 6 E is the cut-open view of each line along the A-A ' line in Fig. 2, B-B ' line and C-C ' line.
First, as shown in Figure 6A, the connecting portion 112 of X electrode 11, the island electrode 121 of Y electrode 12 and terminal 13 is formed at substrate 10.Although do not illustrate in Fig. 6 A, island electrode 111 and the connecting portion 113 of X electrode 11 are also formed in this operation.First, uniform oxide conductive film is formed by sputtering or CVD (Chemical Vapor Deposition: chemical vapor deposition).Oxide conductive film is such as ITO or IZO.The thickness of oxide conductive film is such as 10 ~ 50nm.By photoetching by formed oxide conducting film patterning.Specifically, the mask based on photoresist is formed at the position forming island electrode 111 and 121, connecting portion 112 and 113 and portion of terminal 13.Then, residual fraction is removed by etching.Etching can use the acid mixture of such as phosphoric acid, acetic acid and nitric acid or oxalic acid to carry out.After patterning terminates, anneal in the temperature range of 200 ~ 250 DEG C.By this annealing, amorphous oxide conductive film polycrystallization.
Then, as shown in Figure 6B, distribution 161 is formed.Although do not illustrate in fig. 6b, ground connection distribution 162 is also formed in this operation.First, by such as sputtering or evaporation, uniform metal film is formed.Metal film is preferably low resistance, uses such as Al.But, when making the oxide conductive film contacts such as Al and ITO, sometimes there is bimetallic corrosion because of the difference of ionization tendency.Therefore, the stepped construction of preferably high with corrosion stability metal stacking.Metal film preferably uses such as: the stacked film of MoNb, Al and MoNb; The stacked film of MoN, Al and MoN; Or Mo, Al and Mo stacked film etc.The thickness of metal film is such as 0.3 ~ 1.0 μm.By photoetching by formed metal film patterning.Specifically, the mask based on photoresist is formed at the position forming distribution 161 and ground connection distribution 162.Then, residual fraction is removed by etching.Etching can use the acid mixture of such as phosphoric acid, acetic acid and nitric acid to carry out.
Then, diaphragm 14 and dielectric film 15 is formed as shown in Figure 6 C.First the film of the silicon nitride of diaphragm 14 is formed in this operation.Then, photoresist is utilized to form dielectric film 15.Then, be that the film of mask to silicon nitride etches with dielectric film 15.Thus, contact hole 14a, 14b and 14c of through dielectric film 14 and diaphragm 15 is formed.
More specifically, the film of silicon nitride is formed by such as CVD.As mentioned above, diaphragm 14 is the 3-tier architecture sequentially laminated with the first diaphragm 141, second diaphragm 142 and the 3rd diaphragm 143 from substrate 10 side.The refractive index of the second diaphragm 142 is less than the refractive index of the first diaphragm, and the refractive index of the 3rd diaphragm 143 is greater than the refractive index of the second diaphragm 142.In addition, the thickness of the second diaphragm 142 is more than the summation of the thickness of the first diaphragm 141 and the 3rd diaphragm 143.Change membrance casting condition while form the film of silicon nitride, make to meet these conditions.
With regard to the thickness of each film, such as the thickness of the first diaphragm 141 is 10 ~ 80nm, and the thickness of the second diaphragm 142 is 80 ~ 400nm, and the thickness of the 3rd diaphragm 143 is 10 ~ 80nm.Wherein, the thickness of the second diaphragm 142 is more than the summation of the thickness of the first diaphragm 141 and the 3rd diaphragm 143.
The refractive index of the film of silicon nitride in the case of cvd, can be controlled by such as temperature, raw material gas flow, pressure etc.Qualitative, more low-refraction is larger to there is pressure, the pressure trend that more high index of refraction is less.In addition, there is temperature higher (high frequency output is larger) refractive index larger, the tendency that temperature lower (high frequency output is less) refractive index is less.
Give an example, by SiH4:280sccm, NH3:600sccm, N2:4000sccm, pressure: formed under the condition of 140Pa, RF electric power: 1500W, temperature 230 DEG C, obtain the silicon nitride film that refractive index is more than 1.805.In addition, by SiH4:220sccm, NH3:900sccm, N2:2000sccm, pressure: formed under the condition of 200Pa, RF electric power: 800W, temperature 200 DEG C, obtain the silicon nitride film of refractive index less than 1.805.
Then, utilize such as spin-coating machine or narrow-gap type coating machine, apply photoresist equably in the mode of the film covering silicon nitride.The thickness of photoresist is not particularly limited, such as, be 1.5 ~ 3.0 μm.By photoetching by formed Resist patterning, form dielectric film 15.That is, contact hole is formed at dielectric film 15.
Then, with dielectric film 15 for mask, the film of silicon nitride is etched, form diaphragm 14.Thus, contact hole 14a, 14b and 14c of through diaphragm 14 and dielectric film 15 is formed.Etching can use the dry ecthing that such as make use of fluorine type gas.
In addition, also dielectric film 15 can be removed after the etching.
Then, as shown in Figure 6 D, the connecting portion 122 of Y electrode 12 is formed.Although do not illustrate in figure 6d, the connecting portion 123 of Y electrode 12 is also formed in this operation.First, by sputtering or CVD, uniform oxide conductive film is formed.Oxide conductive film is such as ITO or IZO.The thickness of oxide conductive film is such as 10 ~ 50nm.By photoetching by formed oxide conducting film patterning.Specifically, the mask based on photoresist is formed at the position forming connecting portion 122 and 123.Then, residual fraction is removed by etching.Etching can use acid mixture or the oxalic acid of such as phosphoric acid, acetic acid and nitric acid.After patterning terminates, also can carry out the annealing for making connecting portion 122 and 123 polycrystallization.
Finally, as illustrated in fig. 6e, roughly whole ground of covered substrate 10 forms external film 17.External film 17 can be one of organic-based material and mineral-type materials.Organic-based material is such as acryl resin, is formed by spin-coating machine or narrow-gap type coating machine.Mineral-type materials is such as silicon nitride, is formed by CVD.In either case, the mode all using mask etc. to expose with a part for terminal 13 forms external film 17.
Above, the structure of the touch panel 1 in the first embodiment of the present invention and manufacture method are illustrated.
According to the present embodiment, the diaphragm 14 covering distribution 161 and ground connection distribution 162 is made up of silicon nitride film.The moisture-penetrability of silicon nitride film is low, and barrier propterty is high.Therefore, obtain distribution 161 and ground connection distribution 162 and be not easy corrosion, the structure that reliability is high.
[comparative example]
At this, in order to the effect of present embodiment is described, describe the comparative example of hypothesis.Fig. 7 is the vertical view of the schematic configuration of the touch panel 9 represented in comparative example.Fig. 8 represents the cut-open view along the A-A ' line in Fig. 7, B-B ' line, C-C ' line and D-D ' line.Touch panel 9 replaces the diaphragm 14 of touch panel 1, possesses diaphragm 94.
Diaphragm 94 is made up of silicon nitride in the same manner as diaphragm 14.But diaphragm 94 is different from diaphragm 14, it is a Rotating fields.
Fig. 9 is the figure of the membrane stress schematically showing oxide conductive film (such as X electrode 11) and be formed at the diaphragm 94 on oxide conductive film.In Fig. 9 ~ Figure 11, schematically show the kind of membrane stress with the direction of arrow.The membrane stress of oxide conductive film is generally drawing stress.On the other hand, the membrane stress of the diaphragm 94 be made up of silicon nitride film is generally compression stress.As shown in Figure 9, X electrode 11 is different with the membrane stress of diaphragm 94, and the adaptation of the diaphragm 94 therefore formed on X electrode 11 is poor, easily peels off.
By changing film forming membrance casting condition, the mode that also can become drawing stress with membrane stress forms silicon nitride film.Figure 10 is the figure of the membrane stress schematically showing oxide conductive film (such as X electrode 11) and be formed at the diaphragm 94A on oxide conductive film.The membrane stress of diaphragm 94A is drawing stress.As shown in Figure 10, X electrode 11 is identical with the kind of the membrane stress of diaphragm 94A, and adaptation is good.
But membrane stress is the silicon nitride film of drawing stress is sparse film, for dangling bonds (dangling bond) is many, reactive high film.When the silicon nitride film that oxide conductive film and membrane stress are drawing stress contacts, there is the heat owing to adding in manufacturing process thereafter and cause redox reaction thus rotten situation occurs.In addition, when the silicon nitride film that membrane stress is drawing stress is exposed in air, also rotten situation can be there is.Specifically, silicon nitride film becomes silicon oxynitride film, and barrier propterty declines, and oxide conducting film metallization and transmissivity decline.
In addition, silicon nitride film has refractive index larger, and membrane stress more becomes the trend of compression stress.In addition, silicon nitride film has refractive index less, and membrane stress more becomes the trend of drawing stress.Such as, when refractive index is less than 1.805, the membrane stress of silicon nitride can become drawing stress.
Figure 11 is for illustration of replacing the diaphragm 94 of comparative example or 94A, the figure of effect when possessing the diaphragm 14 in the first embodiment of the present invention.In the present embodiment, the second diaphragm 142 that refractive index is relatively little is refracted the first relatively large diaphragm 141 of rate and the 3rd diaphragm 143 clamps.Therefore, reactive the second relatively high diaphragm 142 does not expose.Further, by making the thickness t2 of the second diaphragm 142 be more than the summation t1+t3 of the thickness of the first diaphragm 141 and the 3rd diaphragm 143, the membrane stress of diaphragm 14 entirety can be adjusted to drawing stress direction.Thus, even if form diaphragm 14 contiguously with oxide conductive film (such as X electrode 11), diaphragm 14 also can be made to be not easy to peel off.
In the present embodiment, diaphragm 14 is formed contiguously with X electrode 11 and Y electrode 12.More specifically, island electrode 121 ground covering X electrode 11 and Y electrode 12 forms diaphragm 14.In the present embodiment, diaphragm 14 protects distribution 161 and ground connection distribution 162, and has the function of interlayer dielectric X electrode 11 and Y electrode 12 insulated concurrently.Thereby, it is possible to reduce patterning number of times.That is, when diaphragm 14 is formed in the mode do not contacted with Y electrode 12 with X electrode 11, after diaphragm 14 patterning, need to form another interlayer dielectric for making X electrode 11 and Y electrode 12 insulate.In the present embodiment, the operation forming this another interlayer dielectric can be omitted.
The membrane stress being more preferably the second diaphragm 142 is drawing stress, and the membrane stress of the entirety of diaphragm 14 is drawing stress.Thus, as shown in figure 11, the membrane stress of X electrode 11 and the membrane stress of diaphragm 14 can be made to be one species, can adaptation to be made further good.
Diaphragm 14 is formed by such as CVD.Therefore, from productive angle, preferred diaphragm 14 is thin.As mentioned above, the thickness t2 of the second diaphragm 142 is more than the summation t1+t3 of the thickness of the first diaphragm 141 and the 3rd diaphragm 143.Therefore, the thickness t1 of the first diaphragm 141 and thickness t3 of the 3rd diaphragm 143 is preferably thin.The thickness t1 of the first diaphragm 141 and thickness t3 of the 3rd diaphragm 143 is preferably respectively below 100nm.
[the second embodiment]
Display device 100 with touch panel can replace touch panel 1, possesses any one in the touch panel 2 ~ 5 of following explanation.Figure 12 is the vertical view of the schematic configuration of the touch panel 2 schematically shown in the second embodiment of the present invention.Figure 13 is the cut-open view of each line along the A-A ' line in Figure 12, B-B ' line, C-C ' line and D-D ' line.Touch panel 2 possesses substrate 10, X electrode 11, Y electrode 12, terminal 13, diaphragm 24, dielectric film 251 and 252, distribution 161 and ground connection distribution 162.
Touch panel 2 possesses the dielectric film 15 that dielectric film 251 and 252 replaces touch panel 1.As shown in figure 12, dielectric film 251 is formed at the position that X electrode 11 intersects with Y electrode 12, X electrode 11 and Y electrode 12 is insulated.More specifically, dielectric film 251 is formed at the layer between the connecting portion 112 of X electrode 11 and the connecting portion 122 of Y electrode 12.On the other hand, dielectric film 252 covers distribution 161 and ground connection distribution 162 ground is formed, protection distribution 161 and ground connection distribution 162.Dielectric film 252 also has the function of the interlayer dielectric insulated with ground connection distribution 162 by the connecting portion 123 of Y electrode 12 concurrently.The connecting portion 123 of Y electrode 12 is connected with the contact hole 252a of distribution 161 through being formed at dielectric film 252.Dielectric film 251 and 252 can be the material of organic, also can be the material of mineral-type.
Touch panel 2 possesses the diaphragm 14 that diaphragm 24 replaces touch panel 1.Diaphragm 24 is different from diaphragm 14, covers a part for terminal 13, X electrode 11, Y electrode 12 and dielectric film 251 and 252 ground and is formed.
Diaphragm 24 also in the same manner as diaphragm 14 for from substrate 10 side sequentially laminated with the 3-tier architecture of the first diaphragm 241, the second diaphragm 242 that refractive index ratio first diaphragm 241 is little, the 3rd diaphragm 243 that refractive index ratio second diaphragm 242 is large.In addition, in the same manner as the situation of diaphragm 14, the thickness of the second diaphragm 242 is more than the summation of the thickness of the first diaphragm 241 and the 3rd diaphragm 243.
[manufacture method of touch panel 2]
Below, the summary of the manufacture method of touch panel 2 is described with reference to Figure 14 A ~ Figure 14 C.Wherein, Figure 14 A ~ Figure 14 C is the cut-open view of each line along the A-A ' line in Figure 12, B-B ' line and C-C ' line.
First, the island electrode 111 of X electrode 11, connecting portion 112 and 113, the island electrode 121 of Y electrode 12 and terminal 13 is formed on the substrate 10.Then, distribution 161 and ground connection distribution 162 is formed.So far operation is identical with touch panel 1, thus omits diagram (with reference to Fig. 6 A and Fig. 6 B).
Then, as shown in Figure 14 A, dielectric film 251 and 252 is formed.Dielectric film 251 and 252 both can be organic-based material, also can be mineral-type materials.
The situation using organic-based material as dielectric film 251 and 252 is described.Organic-based material is the photoresist such as comprising acryl resin, novolac resin.Roughly whole at substrate 10 applies photoresist equably by spin-coating machine or narrow-gap type coating machine.Make formed patterning photoresist by photoetching and form dielectric film 251 and 252.Now, also contact hole 252a is formed.
The situation using mineral-type materials as dielectric film 251 and 252 is described.Mineral-type materials is such as silicon nitride, monox or silicon oxynitride.Formed the uniform film of these materials by CVD roughly whole of substrate 10.By photoetching by formed film patterning.Specifically, the mask based on photoresist is formed at the position forming dielectric film 251 and 252.Then residual fraction is removed by etching.Now, also contact hole 252a is formed.Etching can use the dry ecthing that such as make use of fluorine type gas.
Then, as shown in Figure 14B, the connecting portion 121 of Y electrode 12 is formed.Although do not illustrate in Figure 14 B, the connecting portion 123 of Y electrode 12 is also formed in this operation.
Finally, as shown in Figure 14 C, roughly whole ground of covered substrate 10 forms diaphragm 24.Specifically, silicon nitride film is formed by such as CVD.In the same manner as diaphragm 14, change membrance casting condition, while form the first diaphragm 241, second diaphragm 242 and the 3rd diaphragm 243.Now, use mask etc., the mode exposed with a part for terminal 13 forms diaphragm 24.
In addition, also the external film be made up of organic material can be formed further in covered with protective film 24 ground.By covering the diaphragm 24 of inorganic material with the external film of organic material, the structure that contact resistance etc. is impacted can be become.
Above, structure and the manufacture method of the touch panel 2 in the second embodiment of the present invention is described.Also the effect same with touch panel 1 can be obtained according to the present embodiment.
[the 3rd embodiment]
Figure 15 is the vertical view of the schematic configuration of the touch panel 3 schematically shown in the 3rd embodiment of the present invention.Figure 16 is the cut-open view of each line along the A-A ' line in Figure 13, B-B ' line, C-C ' line and D-D ' line.
Touch panel 3 is compared with touch panel 2, and the formation order of inscape is different.Thus, the lamination order of each film is different.
[manufacture method of touch panel 3]
Below, the summary of the manufacture method of touch panel 3 is described with reference to Figure 17 A ~ Figure 17 E.Wherein, Figure 17 A ~ Figure 17 E is the cut-open view of each line along the A-A ' line in Figure 15, B-B ' line and C-C ' line.
First, as shown in Figure 17 A, the connecting portion 122 of Y electrode 12 is formed.Although do not illustrate in Figure 17 A, the connecting portion 123 of Y electrode 12 is also formed in this operation.
Then, as seen in this fig. 17b, dielectric film 251 and 252 is formed.
Then, as shown in Figure 17 C, the connecting portion 112 of X electrode 11, the island electrode 121 of Y electrode 12 and terminal 13 is formed.Although do not illustrate in Figure 17 C, island electrode 111 and the connecting portion 113 of X electrode 11 are also formed in this operation.
Then, as shown in figure 17d, distribution 161 is formed.Although do not illustrate in Figure 17 D, ground connection distribution 162 is also formed in this operation.
Finally, as shown in Figure 17 E, roughly whole ground of covered substrate 10 forms diaphragm 24.In the present embodiment, also the external film be made up of organic material can be formed further in covered with protective film 24 ground.
Above, structure and the manufacture method of the touch panel 3 in the 3rd embodiment of the present invention is described.According to the present embodiment, the effect same with touch panel 1 and 2 can also be obtained.
[the 4th embodiment]
Figure 18 is the vertical view of the schematic configuration of the touch panel 4 schematically shown in the 4th embodiment of the present invention.Figure 19 is the cut-open view of each line along the A-A ' line in Figure 18, B-B ' line, C-C ' line and D-D ' line.Touch panel 4 possesses substrate 10, X electrode 11, Y electrode 12, terminal 13, diaphragm 44, dielectric film 251 and 253, distribution 161 and ground connection distribution 162.
Touch panel 4 possesses the dielectric film 252 that dielectric film 253 replaces touch panel 2.As shown in figure 18, the position that the connecting portion 123 that dielectric film 253 is formed in Y electrode 12 intersects with ground connection distribution 162, insulate connecting portion 123 and ground connection distribution 162.Dielectric film 253, also in the same manner as dielectric film 252, both can be organic-based material, also can be mineral-type materials.
Touch panel 4 possesses the diaphragm 24 that diaphragm 44 replaces touch panel 2.Diaphragm 44, in the same manner as diaphragm 24, covers a part for terminal 13, X electrode 11, Y electrode 12 and dielectric film 251 and 253 ground and is formed.
Diaphragm 44 also comprises the first diaphragm 241, diaphragm 241 and the 3rd diaphragm 243 that are made up of silicon nitride in the same manner as diaphragm 24.Diaphragm 44 also comprises the 4th diaphragm 441 be made up of monox.First diaphragm 241 is formed on the 4th diaphragm 441.That is, diaphragm 44 is 4 Rotating fields sequentially laminated with the 4th diaphragm 441, first diaphragm 241, second diaphragm 242 and the 3rd diaphragm 243 from substrate 10 side.
In the same manner as the situation of diaphragm 24, the refractive index of the second diaphragm 242 is less than the refractive index of the first diaphragm 241 and the second diaphragm 243.In addition, the refractive index of the 4th diaphragm 441 is such as 1.4 ~ 1.6.
In the present embodiment, the thickness of the second diaphragm 242 is more than the summation of the thickness of the first diaphragm 241, the 3rd diaphragm 243 and the 4th diaphragm 441.
[manufacture method of touch panel 4]
Below, the summary of the manufacture method of touch panel 3 is described with reference to Figure 20 A ~ Figure 20 C.Wherein, Figure 20 A ~ Figure 20 C is the cut-open view of each line along the A-A ' line in Figure 18, B-B ' line and C-C ' line.
First, the island electrode 111 of X electrode 11, connecting portion 112 and 113, the island electrode 121 of Y electrode 12 and terminal 13 is formed at substrate 10.Then, distribution 161 and ground connection distribution 162 is formed.So far operation is identical with 2 with touch panel 1, thus omits diagram (with reference to Fig. 6 A and Fig. 6 B).
Then, as shown in FIG. 20 A, dielectric film 251 is formed.Although do not illustrate in Figure 20 A, dielectric film 253 is also formed in this operation.Dielectric film 251 with 253 formation method with to form dielectric film 251 in touch panel 2 and 3 identical with the method for 252.
Then, as shown in fig. 20b, the connecting portion 122 of Y electrode 12 is formed.Although do not illustrate in Figure 20 B, the connecting portion 123 of Y electrode 12 is also formed in this operation.Connecting portion 122 is roughly the same with the situation of touch panel 1 ~ 3 with the formation method of 123.In the present embodiment, distribution 161 and ground connection distribution 162 expose, and when carrying out patterning, by using oxalic acid to etch, can etch oxide conductive film selectively.
Finally, as shown in Figure 20 C, roughly whole ground of covered substrate 10 forms diaphragm 44.Specifically, first such as form by CVD the 4th diaphragm 441 be made up of silicon oxide film.Then, silicon nitride film is formed by such as CVD.In the same manner as diaphragm 24, change membrance casting condition and form the first diaphragm 241, second diaphragm 242 and the 3rd diaphragm 243.Now, the mode that use mask etc. expose with a part for terminal 13 forms diaphragm 44.
With regard to the thickness of each film, such as the thickness of the 4th diaphragm 441 is 10 ~ 80nm, and the thickness of the first diaphragm 241 is 10 ~ 80nm, and the thickness of the second diaphragm 242 is 80 ~ 400nm, and the thickness of the 3rd diaphragm 243 is 10 ~ 80nm.Wherein, the thickness of the second diaphragm 242 is more than the summation of the thickness of the first diaphragm 241, the 3rd diaphragm 243 and the 4th diaphragm 441.
In the present embodiment, also the external film be made up of organic material can be formed further in covered with protective film 44 ground.
Above, structure and the manufacture method of the touch panel 4 in the 4th embodiment of the present invention is described.According to the present embodiment, diaphragm 44 also comprises the 4th diaphragm be made up of the monox good with oxide conductive film adaptation.Thereby, it is possible to improve the adaptation of oxide conductive film and diaphragm 44 further.
Figure 21 is the figure of the membrane stress schematically showing oxide conductive film (such as X electrode 11) and be formed at the diaphragm 44 on oxide conductive film.Figure 21 and Fig. 9 ~ Figure 11 similarly, schematically shows the kind of membrane stress with the direction of arrow.The membrane stress of the 4th diaphragm 441 be made up of monox is generally compression stress.But according to the present embodiment, the thickness t2 of the second diaphragm 242 is more than the summation t1+t3+t4 of the thickness of the first diaphragm 241, the 3rd diaphragm 243 and the 4th diaphragm 441.Thereby, it is possible to the membrane stress of diaphragm 44 entirety is adjusted to drawing stress direction.
In the present embodiment, preferably the membrane stress of the second diaphragm 242 is drawing stress further, and the membrane stress of the entirety of diaphragm 44 is drawing stress.Thus, as shown in figure 21, the membrane stress of X electrode 11 and the membrane stress of diaphragm 44 can be made to be one species, can adaptation to be made further good.
In the present embodiment, from productive angle, diaphragm 44 is preferably thin.The thickness t4 of the thickness t1 of the first diaphragm 241, the thickness t2 of the 3rd diaphragm 243 and the 4th diaphragm 441 is preferably respectively below 100nm.
[the 5th embodiment]
Figure 22 is the vertical view of the schematic configuration of the touch panel 5 schematically shown in the 5th embodiment of the present invention.Figure 23 is the cut-open view of each line along the A-A ' line in Figure 22, B-B ' line, C-C ' line and D-D ' line.
Touch panel 5 is compared with touch panel 4, and the formation order of inscape is different.Thus, the lamination order of each film is different.
[manufacture method of touch panel 5]
Below, the summary of the manufacture method of touch panel 5 is described with reference to Figure 24 A ~ Figure 24 E.Wherein, Figure 24 A ~ Figure 24 E is the cut-open view of each line along the A-A ' line in Figure 22, B-B ' line and C-C ' line.
First, as shown in fig. 24 a, the connecting portion 122 of Y electrode 12 is formed.Although do not illustrate in Figure 17 A, the connecting portion 123 of Y electrode 12 is also formed in this operation.
Then, as shown in fig. 24b, dielectric film 251 is formed.Although do not illustrate in Figure 24 B, dielectric film 253 is also formed in this operation.
Then, as shown in Figure 24 C, the connecting portion 112 of X electrode 11, the island electrode 121 of Y electrode 12 and terminal 13 is formed.Although do not illustrate in Figure 24 C, island electrode 111 and the connecting portion 113 of X electrode 11 are also formed in this operation.
Then, as shown in Figure 24 D, distribution 161 is formed.Although do not illustrate in Figure 17 D, ground connection distribution 162 is also formed in this operation.
Finally, as shown in Figure 24 E, roughly whole ground of covered substrate 10 forms diaphragm 44.In the present embodiment, also the external film be made up of organic material can be formed further in covered with protective film 44 ground.
Above, structure and the manufacture method of the touch panel 5 in the 5th embodiment of the present invention is described.Also the effect same with touch panel 4 can be obtained according to the present embodiment.
[other embodiments]
Above, describe about embodiments of the present invention, the present invention is not limited in above-mentioned each embodiment, can carry out various change or combination in scope of invention.
Such as, in the structure of touch panel 1, diaphragm 14 also can comprise the 4th diaphragm 41 as diaphragm 44.Similarly, in the structure of touch panel 2 or 3, diaphragm 24 also can comprise the 4th diaphragm 41 as diaphragm 44.In addition, in the structure of touch panel 4 or 5, also can for possessing diaphragm 24 to replace the structure of diaphragm 44.
Utilizability in industry
The present invention can industrially apply as the display device of touch panel and band touch panel.
Claims (9)
1. a touch panel, is characterized in that, comprising:
Substrate;
Be formed on described substrate, the sensing electrode be made up of oxide conductive film;
The distribution be electrically connected with described sensing electrode; With
Cover described distribution and the diaphragm formed,
Described diaphragm comprises:
The first diaphragm be made up of silicon nitride;
Be formed on described first diaphragm, second diaphragm that silicon nitride be made up of little with described first diaphragm phase specific refractivity; With
Be formed on described second diaphragm, three diaphragm that silicon nitride be made up of large with described second diaphragm phase specific refractivity,
The thickness of described second diaphragm is more than the summation of the thickness of described first diaphragm and described 3rd diaphragm.
2. touch panel as claimed in claim 1, is characterized in that:
Described diaphragm contacts with described sensing electrode.
3. touch panel as claimed in claim 1 or 2, is characterized in that:
The refractive index of described first diaphragm is more than 1.805,
The refractive index of described second diaphragm less than 1.805,
The refractive index of described 3rd diaphragm is more than 1.805.
4. touch panel as claimed any one in claims 1 to 3, is characterized in that:
The membrane stress of described second diaphragm is drawing stress,
The membrane stress of the entirety of described diaphragm is drawing stress.
5. the touch panel according to any one of Claims 1-4, is characterized in that:
The thickness of described first diaphragm is below 100nm,
The thickness of described 3rd diaphragm is below 100nm.
6. the touch panel according to any one of claim 1 to 5, is characterized in that:
Described diaphragm also comprises the 4th diaphragm be made up of monox,
Described first diaphragm is formed on described 4th diaphragm,
The thickness of described second diaphragm is more than the summation of the thickness of described first diaphragm, described 3rd diaphragm and described 4th diaphragm.
7. the touch panel according to any one of claim 1 to 6, is characterized in that:
Described sensing electrode comprises:
The first electrode be formed extended at both sides in one direction; With
The second electrode that the direction that the direction extended with described first electrode intersects is formed extended at both sides,
Described second electrode comprises:
Multiple island electrode; With
By the connecting portion that described island electrode is connected to each other,
Described diaphragm is formed at the layer between described first electrode and described connecting portion.
8. the touch panel according to any one of claim 1 to 6, is characterized in that:
Described diaphragm is formed at the layer away from described substrate compared with described sensing electrode.
9. the display device with touch panel, is characterized in that, possesses:
Liquid crystal indicator; With
Touch panel according to any one of claim 1 to 8.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012148190 | 2012-07-02 | ||
| JP2012-148190 | 2012-07-02 | ||
| PCT/JP2013/067796 WO2014007157A1 (en) | 2012-07-02 | 2013-06-28 | Touch panel and display apparatus provided with touch panel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104380229A true CN104380229A (en) | 2015-02-25 |
| CN104380229B CN104380229B (en) | 2016-12-21 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201380033454.2A Expired - Fee Related CN104380229B (en) | 2012-07-02 | 2013-06-28 | Touch panel and the display device of band touch panel |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US9632635B2 (en) |
| CN (1) | CN104380229B (en) |
| WO (1) | WO2014007157A1 (en) |
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| CN106449532A (en) * | 2016-11-03 | 2017-02-22 | 深圳瑞波光电子有限公司 | Passivation layer and part with same |
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- 2013-06-28 US US14/408,366 patent/US9632635B2/en not_active Expired - Fee Related
- 2013-06-28 CN CN201380033454.2A patent/CN104380229B/en not_active Expired - Fee Related
- 2013-06-28 WO PCT/JP2013/067796 patent/WO2014007157A1/en active Application Filing
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004021550A (en) * | 2002-06-14 | 2004-01-22 | Sony Corp | Touch panel, indicator, reflection preventing film, and method for manufacturing the same |
| JP2004152727A (en) * | 2002-11-01 | 2004-05-27 | Toyo Metallizing Co Ltd | Transparent conductive film |
| CN1700826A (en) * | 2004-05-20 | 2005-11-23 | 株式会社半导体能源研究所 | Light-emitting element and display device |
| CN101825791A (en) * | 2009-03-04 | 2010-09-08 | 索尼公司 | Display device |
| CN102446577A (en) * | 2010-09-08 | 2012-05-09 | 索尼公司 | Electrode film and coordinate detecting apparatus |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449532A (en) * | 2016-11-03 | 2017-02-22 | 深圳瑞波光电子有限公司 | Passivation layer and part with same |
Also Published As
| Publication number | Publication date |
|---|---|
| US20150169107A1 (en) | 2015-06-18 |
| US9632635B2 (en) | 2017-04-25 |
| CN104380229B (en) | 2016-12-21 |
| WO2014007157A1 (en) | 2014-01-09 |
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