CN104377312B - film profile - Google Patents

Abstract

The present invention relates to film profiles.A kind of photoelectric device includes first electrode, second electrode and the semiconductive material between first electrode and second electrode, and limit the electrical isolation dyke structure for the trap for surrounding surface region layer, surface region layer includes the first electrode, which has optical cavity, including：Complete reflection layer；Part reflection layer；And including the layer structure of at least one solution processable layer, this layer of structure includes semiconductive material and between complete reflection layer and part reflection layer.Surface region layer includes a reflecting layer and solution processable layer is located on surface region layer and in the first slope and the second slope of side wall.There is provided the light that complete reflection layer and part reflection layer are arranged as generating in layer structure to resonator, and side wall is with the first slope extended from surface region layer and the second steeper slope extended from first slope.

Description

Film profile

Technical field

The present invention relates generally to the photoelectric device including substrate, and wherein substrate has on superficial layer and the superficial layer Limit trap dyke structure, further relate to construction include substrate photoelectric device method, wherein substrate with superficial layer and The dyke structure of restriction trap on the superficial layer.

Background technology

Investigated extensively for manufacture electronic device, be related to that (solution adds from the method for solution deposition active constituent Work).If active constituent is from solution deposition, which is preferably included in the desired region of substrate.This can To be realized by providing the substrate of dyke (bank) layer for including composition, the bank layer of composition limits trap, living in the trap Property ingredient can be from solution deposition.Trap includes solution when it is dried so that active constituent is retained in the substrate that is limited by trap In region.This can allow it is integrated with bottom plate, without the pattern step after deposit, the pattern step meeting after depositing Significantly increase cost.

It has been found that these methods are for being particularly useful from solution deposition organic material.Organic material can be conductive , it is semiconductive and/or photoelectric activity so that they can emit light when electric current passes through them or by being hit in light Electric current is generated when hitting on them and carrys out detection light.It is referred to as organic electronic device using the device of these materials.It is if organic Material is light-emitting material, then device is referred to as organic light-emitting device (OLED).In addition, solution processing allows thin film transistor (TFT) (TFT) and especially the low cost of Organic Thin Film Transistors (OTFT), low temperature manufacture.In such devices, it is especially desired to Comprising organic semiconductor (OSC) in the channel of correct region and especially device, and the dyke for limiting trap can be provided, To include OSC.

Some devices may need to be more than single solution deposition layer.Typical OLED, such as uses in the display OLED, it can be one layer of luminescent material that can have two layers of organic semiconducting materials-one, such as light emitting polymer (LEP), And another layer can be one layer of hole mobile material, such as polythiofuran derivative or polyaniline derivative.

If for example, one or more across device active regions of device layer show heterogeneous thickness, then with dyke knot The light emitting or absorption device of structure may have the color of difference and/or the consistency of light emitting efficiency across active region.It is general and Speech, device can be designed to emit or absorb the light of single general color, for example, red, green or blue, center exists In CIE color spaces specific target frequency and/or point on.For example, device can be designed to 1976 color spaces of CIE (CIELUV) preferred coordinates u ' and v ' in.However, it is desirable to improve the color homogeneity in existing device.Similarly, it is desired to it carries Electrical-optical energy conversion (or in turn) in high device is (specifically to target light frequency or frequency spectrum/come from target light frequency Or frequency spectrum and/or to for providing this conversion of the light of target CIE points) whole efficiency or efficiency uniformity.

Further consider efficiency and cost, it should be noted that advantageously simple dyke structure has features designed to correspondingly wrap Homogenous material/layer of liquid containing all these deposits.But for have to the liquid of all deposits single dyke material and There is the risk of electric leakage paths or short circuit between the electrode of solution deposition layer either side in the device of single pinning point.For example, In the OLED structure including anode-HIL-IL-EL- cathode constructions, leakage current can be through the borderline leakage paths of HIL in sun It is flowed between pole and cathode.Similarly, leakage paths can by be in direct contact in cathode in dyke hole injection layer (HIL), Very thin device stack or the point contact in pinning point cause in dyke.When being back-driven into and/or before turn, JV (Current density-voltage) curve for the device printed completely can for example show high-leakage (high current).When with spin coating (spin) middle layer (IL) and during electroluminescence layer (EL), because the film that HIL is spun on top is completely covered, leakage It is much lower.This can lead to much lower efficiency.

Low leakage device usually requires double dyke systems at present, to detach anode pinning point from cathode.But with double dikes Portion's architectural framework is compared, and single dike portion can reduce complexity.Additionally or alternatively, the single dike portion using photoetching process composition can Think that pixel (dyke) limits and cheap method is provided.But this dyke, which can allow anode region to be exposed to hydrocarbon, (to be resisted Lose agent residue) and/or be that the finished layer of all solution (HIL, IL and EL) provides single fluid pinning point.Highly conductive HIL, In addition the short path length between anode (ITO) surface and the consistent pinning point of HIL-IL-EL- cathodes, it has been shown that can cause High-leakage device.

Accordingly, it is desirable to provide allow different liquids be included in trap in improved structure and/or for constructing this structure Processing procedure.Improved structure can have the advantages that any one or more wherein such as following one or more：Across device The overall power that the color homogeneity of raising, the electricity leakage of relatively low and/or adjustable (tuneable), across device active region are improved Efficiency and/or efficiency uniformity, the lifetime stability of raising (for example, OLED emits) are (preferably, for example, about life test More stable and/or more repeatable device brightness), greater compactness of device and the structural complexity reduced and/or with less (any one of which can lead to the time that device manufacture improves or cost efficiency, improve for ability that processing step is constructed Device output, repeatability, about constituent material volume and/or quantity reduction demand, this for example can cause cost to drop It is low).

In order to be used in the present invention is understood, it is noted that disclosure below：

- US 8,063,551 (Du Pont)；

- US2006/197086 (Co., Ltd of Samsung)；

- US2010/271353 (Sony)；

- WO2009042792 (inventor Tsai Yaw-Ming A etc.)；

- US2007/085475 (semiconductor energy laboratory)；

- US7799407 (Seiko Epson company)；

-US7604864(Dainippon Screen MFG)；

- WO9948339 (Seiko Epson company)；

- JP2007095425A (Seiko Epson company)；

- WO2009/077738 is (in the PCT/GB2008/004135 that on June 25th, 2009 announces, inventor Burroughes and Dowling)；And

- WO2011/070316 A2 are (in the PCT/GB2010/002235 that on June 16th, 2011 announces, inventor Crankshaw and Dowling).

Invention content

According to the first aspect of the invention, the photoelectric device including substrate is provided, substrate has superficial layer and the table The dyke structure of trap is limited on the layer of face, which includes electrically insulating material and with the region for surrounding the superficial layer Thus side wall is to limit trap, surface region layer includes first electrode, and the device further includes second electrode and positioned at first Semiconductive material between electrode and second electrode, the device have optical cavity, including：Complete reflection layer；Part reflection layer； And including at least one layer of layer structure, at least one layer is the layer of solution processable, this layer of structure is partly led including described Electric material and between complete reflection layer and part reflection layer, wherein surface region layer include one of reflection Layer, and the layer of the solution processable is located on surface region layer and in the first slope and the second slope of the side wall, In reflection layer and part reflection layer completely be arranged to, the light to be generated in layer structure provides resonator, wherein：It is described With the first slope extended from surface region layer and from the second slope that first slope extends, wherein first slope does not have side wall Second slope is steep, and the full width at half maximum of at least one layer of thickness block diagram is less than 5nm, at least surface region layer in layer structure The thickness on each point that substantially rule separates, the point include the boundary between surface region layer and side wall First point and at least 10 μm of second point is separated on surface region layer and with the boundary.

By the variation of reduce thickness, can for example improve from device go out coupling (out-coupling), color it is equal The efficiency of even property and/or device.These advantages can be related with the performance of optical cavity, the photogenerated that this would generally be in amplification layer structure (absorption), and therefore make device more efficient.Specifically, optical cavity is preferably (absorption) the light shape generated in layer structure Into standing-wave cavity resonator, such as in the light emitting devices of such as OLED, the gain media of cavity embracing layer structure and offer The feedback of light.The resonant wavelength of optical cavity is in general physical size and physical attribute by cavity (for example, one or more roll over Radiance rate value and/or one or more variations) determine.Resonant wavelength can be by the thickness effect of the layer of solution processable；Thickness across The variation of device active region can cause the corresponding of resonant wavelength to change and therefore lead to widening for device transmitting (absorption) frequency spectrum. The frequency spectrum for being expected that by the light emitting (absorption) of device has narrow peak around target wavelength.This can be by the way that deposit on it can Substantially smooth transition is provided in the surface of solution machined layer to realize, transition be from dyke structure to superficial layer, with reduce or Avoid being deposited on any thickness change of the solution processable layer on the transition.

Preferably, each thickness-preferably in the direction vertical with superficial layer and/or is height on superficial layer Difference-the include thickness of solution processable layer.But thickness can be include surface can machined layer multiple adjacent layers combination Thickness.Thus, for example, thickness can be one in the HIL (hole injection layer), IL (middle layer) and EL (luminescent layer) of OLED Or multiple thickness.Preferably, block diagram include across active region (it is highly preferred that specifically only across surface region layer and/ Or the maximum width of cross-layer structure or solution processable layer (extent)) thickness measurement.Block diagram can be by table It obtains measurement result in each in the multiple regions (such as rectangular or rectangle) in surface layer area domain to obtain, the region It is the adjacent area of grid or grid and preferably comparably shapes simultaneously predetermined size.This can cause in across whole table surface layer area Such as 30-300 measurement result at each point that domain rule separates, wherein whole surface layer can have such as 40-70 μm Maximum length or diameter.Full width at half maximum is more desirably less than 4,3,2 or 1nm.

Preferably, at least one layer of this thickness measurement of layer structure is taken at the point at least along (virtual) straight line , which extends in the direction at least substantially (for example, definitely) on whole surface layer region.Thus, measure knot Fruit preferably includes the measurement result at least on the opposite peripheral point of surface region layer.It is, however, preferable that this thickness Measurement result is obtained at the covering at least point of the two-dimensional grid of the substantially entire 2 dimensional region of surface region layer, and Therefore including more than the measurement result on two peripheral points of surface region layer.In embodiment, this line or grid can be with Surface region layer is further extended beyond, for example, extending to the opposite peripheral point of side wall, trap and/or layer structure so that measure As a result include the measurement result on this peripheral point.Preferably, across the whole surface layer region extension of first electrode, therefore may be used To limit the active region of device.

Being preferably located at any variation of the thickness of the solution processable layer on surface region layer allows device when connecting Emit has the light of the maximum aberration less than or equal to 0.02 in CIE color spaces, and any thickness change is at least in table Boundary between surface layer area domain and first slope.This thickness change is preferably zero, for example, thickness change is in a region On between superficial layer and dyke structure interface either side extension such as 1 μm, 500nm or 300nm and centered on the interface. In order to provide smoother transition, first slope intersected with superficial layer it is preferably very thin and/or with a shallow angle degree with Superficial layer intersects.In general, second slope is extended with steeper angle from first slope, to allow to wrap in compact device Bigger dyke structural thickness containing trap.Second slope extends preferably to the flat surface of dyke structure, the flat surface base It is parallel with superficial layer in sheet.

When on, which preferably emits the maximum aberration having in CIE color spaces less than or equal to 0.02 Light.But the maximum aberration in CIE color spaces can be more preferably less or equal to 0.015,0.01 or 0.005.It is this Aberration can be between the color for emitting (absorption) in color space (preferably 1976 color spaces (" CIELUV ")) Euclidean distance.

Photoelectric device can be further provided for, wherein substantially (for example, the light that transmission (transmit) receives is less than 5 or 10%, but preferably the 100% of reflected light) it is at least one including first completely in reflection layer and part reflection layer One of electrode and second electrode, preferably first electrode include part reflection layer (for example, for bottom emitting device；For Top-emitting devices, second electrode can include part reflection layer).It for example, can be in the superficial layer of bottom emitting device Partially reflecting layer is provided on electrode (for example, anode).In embodiment, partially reflecting layer is between substrate and first electrode. Partially reflecting layer is preferably (for example, silver) of metal, preferably blanket deposit rather than composition.For bottom emission Device, substrate are generally substantially transparent (e.g., including glass).Similarly, the electrode of superficial layer is preferably at least portion It is point transparent, for example, it may be the ITO of blanket deposit and/or composition.

Photoelectric device can be further provided for, wherein optical cavity includes light microcavity.This microcavity can be very thin, for example, tool There are only several microns or less than 1 μm, the overall thickness of 500nm, 300nm, 200nm or 100nm；This thickness can correspond to layer knot The thickness of structure.The quantum effect that this small size can cause that device transmitting (absorption) frequency spectrum is made to narrow is (for example, be related to spontaneous emission Rate and/or atom behavior), in the case that other, the frequency spectrum to determine device transmitting (absorption) is only formed by the standing wave in optical cavity.

Microcavity can be provided by depositing reflexive extra play (such as silver layer).This layer can be in main substrate material Between (such as glass) and first electrode (such as anode), Anodic can include ITO.Another electrode can provide microcavity Opposite reflecting surface.

Photoelectric device can be further provided for, wherein, first slope has being less than or equal to relative to device surface layer 20 degree of ramp angles, preferably less than 5,10 or 15 degree.

Photoelectric device can be further provided for, wherein first slope is extended up in the boundary with the second slope and is less than The dyke structural thickness of 300nm, preferably less than 200nm, it is preferable that wherein at least one in first slope and the second slope Extend along dyke structural thickness 100nm to 150nm.In more general terms, plurality of layer forms dyke structure and with respective Slope, preferably at least layer has the thickness of 100-150nm.For example, it is crossed by first slope and/or the second slope (traverse) difference in height is preferably in the range of 100-150nm.

Photoelectric device can be further provided for, wherein the second slope extends at least the second of 300nm on superficial layer Dyke structural thickness, preferably at least 1 μm.The full-height of dyke is preferably sufficiently thick, to be subjected to RIE, for example, at least 300nm。

Photoelectric device can be further provided for, wherein first slope extends beyond at least 1 μm of length along superficial layer, preferably Ground, wherein the second slope extends beyond at least 8 μm of length along superficial layer, it is preferable that wherein side wall (or at least first slope Combined with the second slope) extend beyond along superficial layer at least 10 μm of length.

Photoelectric device can be further provided for, wherein first slope extends to the first dyke structural thickness (on superficial layer Height) H1 and the second slope extend to the second dyke structural thickness H2 (total height on superficial layer, H1 be one of H2 Point), the second dyke structural thickness includes the first dyke structural thickness, and wherein H1 is less than or equal to 0.3*H2.

Can further provide for photoelectric device, solution processable layer described in wherein at least one on the second slope, with First slope, which separates, has pinning point at the point of (separate).Preferably, when in deposited solution at least the second slope, for shape Contact angle into the solution of the solution processable layer on surface region layer be 10 ° or smaller and/or, when from second tiltedly Point on slope extends and in the surface region of the dyke structure of side wall during deposited solution, is used to form positioned at superficial layer area The contact angle of the solution of solution processable layer on domain is 50 ° or bigger.

Photoelectric device can be further provided for, wherein side wall extends to dyke structural thickness H (total height on superficial layer Degree), and the shortest distance on surface region and superficial layer between the immediate point of pinning point is at least 10*H.

Photoelectric device can be further provided for, wherein dyke structure includes at least one photoresist layer.In this device In part, the photoresist layer can have the point on the second slope and including fluorochemical.These compounds can It is molten as received from manufacture, to exist in photoresist agent solution or unfluorinated photoresist can be added to Liquid.Preferably, dyke structure includes multiple photoresist layers, and the photoresist layer has first slope and/or dyke Structure is included with fluorochemical and first slope and the photoresist layer on the second slope.

Device can be light emitting devices or light absorption device, preferably such as organic photovoltaic devices (OPV；For example, too It is positive can battery) light absorption device or such as light emitting devices of Organic Light Emitting Diode (OLED).It is OLED in device When, the solution processable layer can include providing hole injection layer (HIL；It is aqueous or not aqueous) organic semiconductive material Material, and the another kind that preferably at least a solution processable layer includes being located on the material for providing HIL has Machine semiconductive material, this another organic semiconductive materials is for providing middle layer (IL) or light-emitting layer (EL).

According to the second aspect of the invention, the method for providing construction photoelectric device, the photoelectric device include having surface Layer and the superficial layer on limit trap dyke structure substrate, dyke structure include electrically insulating material and with surround described in Thus the side wall in the region of superficial layer limits trap, surface region layer includes first electrode, and the device further includes second electrode And the semiconductive material between first electrode and second electrode, this method include：Formation includes the first reflection layer Superficial layer；The dyke structure with the side wall is formed, the side wall includes extend from the surface region layer first Slope and from first slope extend the second slope；And pass through optical cavity formed below：It is formed at least one layer of and positioned at the Layer structure on one reflection layer, at least one layer are solution processable layers, and layer structure includes the semiconductive material, Wherein forming layer structure is included on surface region layer deposits organic solution in the first slope of side wall and the second slope, with shape Into the layer of solution processable, and dry deposited organic solution；And the second reflection layer is formed on layer structure, wherein One reflection layer is complete reflection layer and another reflection layer is part reflection layer, and reflecting layer is in layer structure The light of generation provides resonator, wherein：First slope is steep and at least one layer of in the layer structure formed without the second slope The full width at half maximum of thickness block diagram is less than 5nm, the thickness on each point that the substantially rule of at least surface region layer separates, The point include first point of boundary between surface region layer and side wall and on surface region layer and with The boundary separates at least 10 μm of second point.

With for first aspect similarly, thickness preferably includes the thickness of solution processable layer.By allow side wall from The shallow slope that superficial layer starts, with the variation of reduce thickness, thus can advantageously improve such as device color homogeneity and/or Efficiency.In this regard, this method may desirably construct device with connect when transmitting in CIE color spaces have be less than or The light of maximum aberration equal to 0.02, further preferably less than or equal to 0.015,0.01 or 0.05, this refers preferably to 1976 Maximum Euclidean distance in CIE color spaces (CIELUV) between the color of device.

Method can be further provided for, wherein at least one of complete reflection layer and part reflection layer include first One of electrode and second electrode, preferably first electrode include part reflection layer.

Method can be further provided for, wherein optical cavity includes microcavity.

Can further provide for method, wherein the second slope is steeper than first slope, wherein side wall on the second slope, with At the point that first slope separates there is surface energy to interrupt, wherein the organic solution deposited soaks first slope and the second slope Until the pinning point interrupted in surface energy.In this case, this method can be included on solution processable layer At least another solution of deposit, such as the luminescent layer (LEL) for middle layer (IL) and/or including light emitting polymer (LEP), In this at least another solution until pinning point all soak (wet out) and it is dry deposited this is at least another molten Liquid.It can be produced by handling (treat) between soaking at the top of the second slope and non-wet surface to provide boundary Raw pinning point.

Thus, embodiment can provide (to be preferably all pinned at same at least one solution processable layer Point multiple layers) pinning point so that pinning point is separated with surface region layer by a paths, the path due to along its entirely grow Degree has different slopes and deviates straight line.This can reduce electrode (for example, the sun of one or more solution deposition layer either sides Pole and cathode) between electric leakage paths or the risk of short circuit.For example, in the OLED for including anode-HIL-IL-EL- cathode constructions In structure, along any leakage preferably between the anode and cathode on the boundary of higher resistive (highly resistive) HIL Path all increases.The path of lengthening preferably has sufficiently high resistance, to prevent from being possible to significantly in the case that other Make for example, the leakage of the degenerations such as efficiency, reliability and/or service life, color change.

More specifically consider the device architecture generated, it should be noted that surface energy is interrupted preferably by soaking (example Such as, it is hydrophilic) and do not soak and lead to what one or more process steps on boundary generated between (for example, hydrophobic) region.This Kind boundary is preferably at the top on the second slope.The top on the second slope is preferably adjacent with the flat surface of dyke structure, The flat surface is opposite and parallel with superficial layer.In any case, surface energy interruption be all preferably distal from first slope and because This is far from surface region layer.

This method, which can be included on solution processable layer, deposits at least another solution, for example, EL (luminescent layer) and/ Or IL (middle layer), wherein this at least another solution until pinning point all soak and it is dry deposited this is at least another A kind of solution.Thus, multiple this solution processable layers can have identical pinning point.

Device can be light emitting devices or light absorption device, and the preferably light of such as organic photovoltaic devices (OPV) is inhaled Receive device or such as light emitting devices of Organic Light Emitting Diode (OLED).When device is OLED, organic solution can be with It is for providing hole injection layer (HIL；It is aqueous or not aqueous), preferably this method also includes on the solution processable layer And at least another solution processable layer is formed between first electrode and second electrode, which is to be used for Middle layer (IL) or light-emitting layer (EL) are provided.

Method can be further provided for, wherein, when being deposited to first slope region and extend to pinning point from first slope At least one of the second sloped region it is upper when, the contact angle of organic solution is 10 ° or smaller.This contact angle allows generally for Surface it is good wet out.Additionally or alternatively, when be deposited to the dyke structure that extends from pinning point far from first slope Region on when, the contact angle of organic solution is preferably 50 ° or bigger.This contact angle is generally not allowed the good leaching on surface It is wet, that is, not soak.

The formation of pinning point is specifically contacted to consider this method, forming dyke structure can include：On the surface of substrate The first bank layer for including photoresist is formed on layer；Light-composited film and the first bank layer of developing, with the region of exposed surface layer； On fluorinated photoresist solution deposition to the exposed region of the first bank layer and superficial layer, to form the second bank layer； It bakes (bake), to harden the second bank layer, wherein the fluorochemical of fluorination photoresist agent solution is in the baking process In move to the surface of the second bank layer, to increase the contact angle of organic solution and the surface；And light-composited film and develop the Two bank layers, so as to the region of exposed surface layer again and the region of the first bank layer of exposure so that the first bank layer area Domain with first slope and the second dyke layer region with the second slope, wherein increased contact angle is higher than organic solution and the One slope and the contact angle on the second slope, and pinning point is in the second dyke layer surface of the fluorochemical with migration Boundary.The surface that compound moves in baking process may be described generally as " Free Surface ", that is, with external environment The interface in (such as space).Such as in any embodiment using this fluorination photoresist, photoresist can be from light Resist manufacturer is caused to provide can be unfluorinated photic with fluorochemical is added into the fluorinated or processing procedure The additional step of resist.In any case, after the hardening of the second bank layer, the second bank layer is all preferably included than the first dike The fluorochemical of portion's layer higher concentration.In addition, after the part developed in the second bank layer to remove the second bank layer, before It is the part of " Free Surface " part, it is therefore preferred to have the boundary soaked/do not soaked has by removing and the second of exposure The edge of bank layer, this edge are the parts of side wall.Thus, in addition to double inclined side walls, pinning point can also be generated.

Alternatively, in embodiment, forming dyke structure can include：It is photic anti-by depositing fluorination on superficial layer It loses agent solution and forms dyke structure sheaf, and dry deposited solution to harden dyke structure sheaf, wherein being fluorinated photic The fluorochemical of Resist Solution moves to the surface of dyke structure sheaf in the baking process, with increase organic solution with The contact angle on the surface；It deposits and dry photoresist layer, and light-composited film and develops photic anti-on dyke structure sheaf Lose oxidant layer；Dry etching steps, will pass through the photoresist layer of development etching dyke structure sheaf, with exposed surface layer region, So that the dyke structure sheaf after etching is with the side wall for surrounding exposed surface region layer and oblique including first slope and second Slope；And the photoresist layer of development is removed, to expose the surface of dyke structure sheaf, the surface exposed includes the migration Fluorochemical, wherein surface energy interrupt be located at include migrate fluorochemical exposed surface and etching after side wall Between interface.Dry etching steps can include reactive ion etching, it is preferred to use oxygen plasma.With more than class Seemingly, it is the part of bank layer " Free Surface " part before, it is therefore preferred to have the boundary soaked/do not soaked has by aobvious Shadow removes the edge of the part of bank layer and the bank layer of exposure, this edge is the part of side wall.Thus, in addition to double inclined Except side wall, pinning point can also be generated.

In such an embodiment, forming dyke structure can include：Develop simultaneously light-composited film dyke structure sheaf, with exposure by dike The surface region layer that the side wall of portion's structure sheaf surrounds, wherein photoresist layer is deposited on dyke structure sheaf is included in light-composited film Dyke structure sheaf on deposit photoresist agent solution, and photoresist layer of developing includes exposed surface layer region again, And the dry etching steps of exposed surface layer region extend exposed region through thinning dyke structure sheaf, are consequently formed described First slope and the second slope.

Alternatively, in such an embodiment, light-composited film photoresist layer can include passing through with substantially impermeable Penetrate region, fractional transmission region and substantially completely regional transmission (at least have than fractional transmission region bigger transmissivity) Mask radiates photoresist layer；And photoresist layer of developing includes removing the region and part of photoresist completely Ground removes the photoresist region that radiation is exposed to by fractional transmission region.

In another processing procedure embodiment, form dyke structure and include：It is photic by depositing fluorination on superficial layer Resist Solution and form bank layer；It bakes, to harden bank layer, wherein the fluorochemical of photoresist agent solution is described The surface of bank layer is moved in baking process, thus increases the contact angle on organic solution and surface；The dyke of light-composited film hardening Layer, the light-composited film include the first area with the first dose of radiation radiation bank layer and radiate bank layer with the second dose of radiation Second area, second dose of radiation be less than the first dose of radiation；Develop bank layer, with the region of exposed surface layer and The region of the bank layer radiated with second dose of radiation is partially removed in, the part removes to provide to surround and be exposed as a result, Region and the side wall with first slope and the second slope, wherein dyke of the pinning point in the fluorochemical with migration Boundary between layer surface and side wall.Depending on being using negative photoresist or positive photoresist, the firstth area It domain can be on surface region or on the dyke structure division to be retained.Part removal preferably thinning extends to table The region of the bank layer in surface layer area domain, so as to along side wall and thus along the solution processable layer edge that be deposited in trap more Long path provides supporting structure.

In this processing procedure embodiment, light-composited film can include radiating dike simultaneously by the first mask and the second mask Portion's layer, wherein being included with the first dose first area through the wholly transmissive area radiation of the first mask and the second mask the One region, and included with the second dose second area through at least portion of each in the first mask and the second mask Divide regional transmission radiation second area.At least partly transmissive region can include the wholly transmissive region and/or the of the first mask The fractional transmission region of two masks.At least one of these regions are preferably the part with the transmission gradient (gradient) Regional transmission.

Alternatively, in this processing procedure embodiment, light-composited film is included by with fractional transmission region and more (excellent Selection of land is complete) mask of regional transmission radiation bank layer, wherein being included with the first dose first area by more transmiting Area radiation first area, and included with the second dose second area through the secondth area of fractional transmission area radiation Domain.

Alternatively, this processing procedure embodiment, which is included on the region of superficial layer, deposits reflector layer, wherein：Deposit Fluorination photoresist agent solution deposits fluorination solution on reflector layer and on superficial layer；And light-composited film is included by covering Mould radiates bank layer, wherein radiation first area includes the part that first area absorbs the first dosage directly received by mask And absorb the part of dosage for receiving and being reflected back by reflector layer in first area from the first mask.

Preferred embodiment is limited in appended dependent claims.

In the aspects above of preferred embodiment in any one or more and/or Yi Shang optional feature any one Or it is multiple can be with any permutation and combination.

Description of the drawings

For a better understanding of the present invention and in order to show how the present invention can realize, examples reference will be passed through now Attached drawing, wherein：

Fig. 1 a show example constructions method, wherein fluorination dyke material is spun on anode (such as ITO) and by light Composition, to provide trap；

Fig. 1 b show the use of single masks, in the mask with fractional transmission region, to limit long anode-the moon Pole span from；

Fig. 1 c show the realization method of the dyke pixel of the RIE compositions with short side wall path length (above to centre Figure) and, as control, according to the pixel (nethermost figure) for the embodiment for providing longer path length；

Fig. 1 d are shown with the device of dyke formed from the processing procedure of Fig. 1 a or 1b；

Fig. 2 shows service life (device stability) figures；

Fig. 3 a show double-developing processing procedure；

Fig. 3 b show the dual masks processing procedure with single patterned layer；

Fig. 3 c show single masking part transmission processing procedure with single patterned layer；

Fig. 3 d, which are shown, utilizes reflector space and single mask process with single patterned layer less than threshold exposure dosage Process；

Fig. 4 a-4e show the scanning electron microscope image of the stent dyke sectional view of embodiment；

Fig. 5 shows across device active region HIL+IL thickness and emits the variation of CIE value；

Fig. 6 shows the desired elimination to precipitous dyke structure boundary；And

Fig. 7 shows the block diagram of the hole injection regions thickness measurement of standard and shallow dyke embodiment.

Specific embodiment

In general, the layer of example OLED embodiments can be as follows：

Substrate, such as glass, it is therefore preferred to have superficial layer including ITO (80nm) electrode and micro- optionally for being formed The reflecting layer of chamber, such as Ag

HIL (hole injection layer)=ND3202b ink jet printing of the utilization from Nissan chemical plant

IL (middle layer)

EL (luminescent layer), including light emitting polymer LEP, such as green emitting polymer.

In general embodiment provides single dike portion architectural framework, for example, with longer path length, thus reduce leakage Electric current.For OLED, this path length can be in anode surface (for example, ITO) the fluid pinning point consistent with HIL-IL-EL Between.These can be that any potential parasitic leakage current generates high resistance along the longer path length of higher resistive HIL Property path and/or generate non-emissive edge devices diode.This dyke structure is had turned out to be to OLED lifetime stabilities It improves.

It is intended for the processing procedure of a variety of dykes manufacture of this embodiment in the following description.Such as：(i) with auxiliary Layer composition and the hydrophobic dyke of partial reactive ion(ic) etching (RIE) development；(ii) have and exposed for the part of RIE mask layer Pixel edge unpatterned hydrophobic dyke；(iii) double-developing processing procedure；(iv) dual masks with single patterned layer are handled Process；(v) single masking part transmission (leakage) processing procedure with single patterned layer；And (vi) using reflector space and is less than Single mask process with single patterned layer of threshold exposure dosage.

The example of these processing procedures can provide dredging for the single development of the stent with part oxygen plasma etch Water dyke.Advantageously, the hydrophobic dyke of single development and subsequent pattern step allow oxygen plasma clean ITO regions and Also partly etch the pre-qualified amount of dyke.ITO and the dyke of part etching are preferably hydrophilic, to allow HIL always Non- etching area to hydrophobic dyke all soaks.An area of HIL all has dyke up to HIL pinning points below, this Pinning point will be shared with IL and EL.Such as the HIL for using higher resistive, by it is long and preferably device it is programmable away from It is advantageously separated from by active anode with cathode, thus leads to lower electricity leakage.

Thus, it can be by providing the anode surface (ITO) and anode that soak for the single dike portion architectural framework of OLED Longer path length is improved between surface and the consistent fluid pinning points of HIL-IL-EL.This longer path length can be with Higher resistive option is generated for any potential parasitic leakage current.Embodiment allows anode-cathode path in a controlled manner It lengthens, and therefore the embodiment is adjustable (tuneable), to reduce parasitic leakage current, this can correspondingly improve device Part efficiency.

Additionally or alternatively, this processing procedure can reduce relative to double dyke architectural frameworks it is complicated Property.

Fig. 1 a show example constructions method, wherein fluorinated dyke material (dyke structure sheaf 12) is spun to anode On (superficial layer 11) (such as ITO), and by light-composited film, to provide trap (see the region of 13 top of surface region layer).Then, dike Photoresist layer 14 on portion's material performs additional processing procedure by light-composited film, to remove dyke area, Thus lengthened insulative dyke stent.This additional processing procedure can include the part for being etched through dyke material applied Reactive ion etching.Photoresist is removed after the additional processes.Thus, change in the edge of trap The profile of dyke material so that profile provides longer path length.Such as by Fig. 1 a along first slope s1 and the second slope Shown by the being merely illustrative property filament of s2, etching causes by removal photoresist and the longer circuit on the surface 15 of exposure Diameter.

Alternative approach shown in Fig. 1 b is using single masks, in the mask with fractional transmission region, to limit dike The anode-cathode distance of the length of portion's stent；RIE step preferably etches that there are the pixel edges of thin positivity mask layer.Due to thin Mask layer, RIE can etch the pixel at the edge with the pixel for being exposed to plasma.By relative to RIE compositions The size of notch changes the mask design size of the dyke pixel of development, can adjust with this method anode-cathode away from From and parasitic leakage current therefore amount.This and simple light-composited film dyke pixel and/or simple RIE compositions dyke picture For element on the contrary, in light-composited film dyke pixel and RIE composition dyke pixels, each pixel will usually provide short circuit of the anode to cathode Electrical path length (blue region) and length usually cannot be adjusted.Specifically, Fig. 1 b show superficial layer 21, dyke structure sheaf 22nd, surface region layer 23, photoresist layer 24, slope s1 and s2 and surface 25.

(Fig. 1 c show the structure of the dyke pixel of the RIE compositions with short side wall path length (above to intermediate figure) Make and, as control, according to the construction of the pixel for the embodiment for providing longer path length (nethermost figure)).

Fig. 1 d are shown with the device of dyke formed from processing procedure embodiment as described above, and are further wrapped It is IL (middle layer) and/or LEP (light-emissive polymers to include solution processable layer L1 that form is HIL (hole injection layer) and form Object) layer another solution processable layer L2.As seen from Fig. 1 d, HIL, IL have consistent pinning point with LEP fluids.IL And/or EL layers can be covered by EIL (electron injecting layer), EIL can correspondingly be covered by cathode layer.Preferably, this EIL is not The pinning point of inclusion layer L1 and L2, but cover these layers and extend on the adjacent area of dyke structure.In conformal painting (coat) EIL is covered so that in the embodiment that extends on the layer and adjacent region, cathode layer preferably can directly form sediment Product is on EIL.

In view of described above, with for example detaching double dyke systems of anode pinning point in contrast from cathode, embodiment carries The single dike portion structure with long insulating support is supplied.Single hydrophobic dyke can be used and subsequent patterning process is used for Elongate dyke stent.In embodiment, ITO and dyke stent can be hydrophilic, so as to allow HIL until dyke becomes thin The pre-qualified point (ink pinning point) of water all soaks.An area of HIL will be below until HIl pinning points all have dike Portion, it will share this pinning point with IL and LEP.By using higher resistive HIL, active anode can separate long with cathode (and being that device is programmable) distance.

Embodiment allows anode-cathode path length to increase in a controlled manner and therefore provides reduction parasitic leakage current Adjustable processing procedure, this cause about life test device illuminate more stable (and repeating).As control, by standard light Use can be provided by carving the single dyke that processing procedure or more complicated but standard RIE (reactive ion etching) processing procedure are formed In the cheap method that pixel (dyke) limits.But both standard techniques can all be left in pixel (device) edge it is short Anode-cathode path length.It has been shown that the short circuit between anode (ITO) surface and the consistent pinning point of HIL-IL-EL- cathodes Electrical path length (short stent) leads to the unstable device when device drives at any time.

Alternatively, Fig. 1 a may be considered that the processing procedure stream implementation shown for the single dike portion with long stent Example.The processing procedure is related to the rapid patterning process of two-step to generate long dyke stent.Stent is from anode (ITO) to ink pinning The length of point can be controlled by assisted drawing step, as the depth of stent can be controlled to provide it is abundant with anode It is electrically isolated.Change the mask design ruler of the dyke pixel of development by the Pixel Dimensions of the partially patterned step relative to auxiliary It is very little, it can be let out using this embodiment to adjust the parasitism of anode-cathode apart from (referring to being merely illustrative property filament) and therefore The amount of leakage current.With each of for example will usually provide anode-cathode short path length (<1 μm) and length it is usually non-adjustable It saves simple light-composited film dyke pixel or simple R IE composition dyke pixels (except dyke height) to compare, this reality Apply example generate long stent device (for example,>2μm).

Longer anode can also realize that still, this generally will be on pixel side to cathode distance by making dyke higher HIL-IL-EL profiles are adversely affected at edge, make them thicker and lead to non-uniform transmitting.

Preferably, HIL, IL of embodiment all have consistent pinning point with EL.This can cause from anode to cathode Long leakage paths, wherein cathode are that HIL (conductive hole injecting layer) intersects with metallic cathode at (meet).By as described above Long transverse direction HIL distances, detach anode (ITO) by using higher resistive HIL and then from cathode to minimize this shadow It rings.

Consider device as a result, the device stability during life test shows significant improvement.In embodiment, lead to Crossing increases to the resistance (path length) for the point that HIL-IL-EL intersects, and long stent is substantially reduced pixel edge diode effect (this It is non-emanative thin diode).

Fig. 2 shows service life (device stability) figures.It can be seen that single dike portion-short filter holder means (dashed curve) is first Bright wave (brightness is increased with fixed electric current) begin from a device to another device significant changes.This is likely due to exist Vertical leakage paths and caused by, dduring test by " burn-up ", so as to which electric current be caused to redistribute.In fig. 2, single dike portion- Long stent (full curve) shows the more tight distribution of bright wave amplitude, it means that the effect may not be with leakage current phase It closes.Possible with this dyke assessment material and processing procedure stability.With single dike portion-long stent arrangement, service life (device Degenerate) it is more predictable and far independent of pixel-edge devices effect.Thus, the hydrophobic dike of list with long stent The verified improvement for being related to OLED lifetime stabilities in portion.

Consider complex disposal process, it should be noted that reduce with the single dike portion method of long insulating support by generating Leakage, simplified processing procedure method can generate the hydrophobic dyke of long stent list and/or for double dyke architectural frameworks Reduce complexity.Advantageously, the embodiment of this simplification allows anode-cathode path to increase in a controlled manner, and therefore Adjustably reduce parasitic leakage current, parasitic leakage current reduces device efficiency.Single dike portion pixel is realized in embodiment covering Alternative simplification method.

Further consider complex disposal process, the processing procedure method of Fig. 1 a is related to auxiliary layer composition and partial reaction The hydrophobic dyke of the development of property ion(ic) etching (RIE).This may need two photoetching compositions cycle (such as：Cleaning is baked, is applied Cover, bake, exposing, baking, developing, dyke curing, coating, exposure, developing) add RIE step and positive corrosion-resisting agent stripping (strip)。

But for example, with adding reactive ion etching using two light-composited film steps for example shown in Fig. 1 a to generate OLED The embodiment of long stent needed for device stability is compared, and the embodiment of Fig. 1 b can provide the hydrophobic dyke of long stent list development Processing procedure simplifies.

But the first simplification as shown in Figure 1 b shows unpatterned hydrophobic dyke, has for RIE mask layer Partial exposure pixel edge.This processing procedure eliminates demand of the first composition cycle to mask and development step.

A kind of alternative simplification is shown in fig. 3 a, which is described as double-developing processing procedure.This processing procedure can be with Remove the demand of RIE and strip step.Preferably, the dyke of the first composition is thin, has the shallow slope into pixel.It is preferred that Ground, deposit (such as spin coating) first, thin bank layer, and harden.Then, which develops by light-composited film and then, with exposure The region of anode, the thin layer have the gentle slope to exposed region.Then, another bank layer is deposited, light-composited film and shows Shadow.Advantageously, the substance of such as fluorine material (such as fluorin radical) in another bank layer is processed in the baking of this layer The top surface of the bank layer is moved in journey so that the top surface will not be (preferably also lamellate as the side wall of the bank layer Side wall) it can be soaked like that by the solution of exposed region to be deposited to.Specifically, Fig. 3 a show superficial layer 31, the first dyke Layer 32, has second bank layer on surface 34 and slope s1 and s2 at surface region layer 33.

Fig. 3 b show that form is that the alternative simplification of dual masks processing procedure is carried out with single patterned layer.This is single composition step Rapid processing procedure without positive type resist layer, but may need two photomasks and double-exposure step.Top mask (mask 2) it can be more sharp limit slope s1 and s2 gradient mask.Specifically, Fig. 3 b show superficial layer 41, bank layer 42nd, surface region layer 43, slope s1 and s2 and surface 45, wherein region 44 are relative between region 44 or under surface 45 The second area of the bank layer of one or more first areas in face.

Fig. 3 c show another alternative simplified：Single masking part transmission (leakage) with single patterned layer is processed Journey.This is single pattern step processing procedure of no positive type resist layer, but may need the photomask of higher costs, but has There is single step of exposure.Specifically, Fig. 3 c show superficial layer 51, bank layer 52, surface region layer 53, slope s1 and s2, And surface 55, wherein region 54 is the dyke relative to one or more first areas between region 54 or below surface 55 The second area of layer.Fractional transmission (such as Subresolution characterize) mask can more sharp limit slope s1 and s2 Gradient mask.

Fig. 3 d, which are shown, and another kind is alternative simplifies：Single mask process with single patterned layer, utilizes reflectivity Region and less than threshold exposure dosage.This is single pattern step processing procedure of no positive type resist layer, and is single exposure Step.The design of the layer of front can combine the reflective area for being used for generating higher doses region, so as to fully crosslinked (cross-link) dyke.Anode-cathode distance and the therefore amount of parasitic leakage current can be adjusted with this method. Specifically, Fig. 3 d show superficial layer 61, bank layer 62, surface region layer 63, slope s1 and s2 and surface 65, wherein Region 64 is the second area relative to one or more first areas below surface 65 of bank layer.

This is with the single dike portion pixel of light-composited film and/or the dyke pixel of RIE compositions on the contrary, the wherein single dike portion picture of light-composited film The dyke pixel of element and/or RIE compositions is each usually will to provide short path length (blue region) from anode to cathode simultaneously And normal length it is unadjustable-referring to Fig. 1 c.

About above-described distinct methods and embodiment, Fig. 4 shows various exemplary bracket dyke images.Fig. 4 a are shown Double-developing long stent dyke, Fig. 4 b show the double-developing long stent dyke with HIL, and Fig. 4 c show the recess through RIE Long stent dyke, Fig. 4 d show single development dyke, and Fig. 4 e show single development dyke with HIL (short (nothing) is propped up Frame).

The flat thickness profile of HIL+IL it is expected to maximize OLED device performance on microcavity platform.In the device of ink jet printing In part, thickness profile depends on the dyke structure of bottom.Next preferred dyke profile is described in detail, to realize that single dike portion is sprayed Suitable flat thickness profile in the device of ink print.Advantageously, this profile can be provided from dyke stent to active region Gentle transition, the HIL of printing is allowed to form the flat profile of suitable microcavity OLED device.

Specifically consider using gentle stent single dike portion+not aqueous HIL flat film profile, embodiment can provide from Thus dyke stent allows the HIL of printing to form the flat wheel of suitable microcavity OLED device to the gentle transition of active region It is wide.The flat thickness profile of HIL+IL can it is expected to maximize the performance of OLED device on microcavity platform.In the device of ink jet printing In part, thickness profile depends on bottom dyke structure.Embodiment provides to realize in the device of single dike portion ink jet printing The dyke profile of appropriate flat thickness profile.

Realize that maximum performance is generally required to microcavity OLED device intima-media thickness and profile in best possible color point Accurate control.In addition, if there are the notable inhomogeneities of HIL+IL layers of profile, then there will be it is non-optimal go out coupling region simultaneously And performance will be impaired.

For example, for the device of ink jet printing, the width section of HIL+IL thickness is shown in FIG. 5.It can be seen that pixel Fringe region and central area in comparison show significant thickening.CIE coordinates are in that region from target color point Offset.This causes integral device performance impairment.

A kind of dyke type has been developed to minimize heavy-edge amount, and has therefore improved the performance of printing.Due to HIL cannot closely follow dyke profile, and the drastically transition from stent to ITO causes edge to thicken.

The embodiment with gentle dyke stent is shown in FIG. 6, is included in what the top in following figure was irised out The close description in region, wherein, compared with the embodiment (left-hand side) of no this decline, show in the figure below right-hand side Gentle decline is gone out.

It is had been shown using this gentle stent dyke type and maximises device performance on the platform of ink jet printing, So that it is comparable with SC (spin coating device) data (data shown in the device of transmitting green light)：

Wherein DE=(u ' v ') is defined using u ', the v ' of 1976 color spaces of CIE (" CIELUV ").The table show all Device such as the ink jet printing of gentle stent dyke device has the comparable performance of device with spin coating.

In addition, the in this regard it should be noted that CIE u ' of CIExy to the CIELUV from 1931 CIE XYZ color spaces The transformation (that is, CIE1931 → CIE1976) of v ' is given by：

And it is given by using u ', the v ' of the CIELUV aberration module DE defined：

That is, the Euclidean distance in 1976 spaces of CIE.

For the embodiment of such as above " gentle stent dyke " device, for the CIEx and y of green emitted (NTSC) Target is 0.213 and 0.724 respectively.CIExy measurement results are obtained using Minolta colorimeters, and dE is to use What CIExy was calculated.

DE=0.02 is acceptable preferred upper limit in embodiment, still, can more it is expected 0.005,0.01 or 0.015.

Fig. 7 shows display standard dyke than thicker area of the embodiment with gentle stent dyke with greater proportion The block diagram in domain.The block diagram be by across by dyke structure side wall surround surface region layer on effective coverage, Thickness is measured at the point that rule separates and is obtained.Device with " standard dyke " is with similar to institute in the upper figure of Fig. 6 The device of the long stent with substantial constant thickness shown.Device with " shallow dyke " with long stent, the stent towards The superficial layer of device is tapered, for example, being preferably less than 5,10,15 or 20 degree of first slope with angle." shallow dyke " Device has than the narrower thickness distribution of " standard dyke " device, therefore allows more in OLED controlled to go out coupling (for light It is into coupling to absorb device).

A kind of photoelectric device includes first electrode, second electrode and the semiconductive between first electrode and second electrode Material and the electrical isolation dyke structure for limiting the trap for surrounding surface region layer, wherein surface region layer include the described first electricity Pole, the device have optical cavity, including：Complete reflection layer；Part reflection layer；And including at least one solution processable layer Layer structure, this layer of structure include the semiconductive material and positioned at the complete reflection layer and part reflection layer it Between.Surface region layer include one of reflecting layer and solution processable layer be located on surface region layer and side wall first On slope and the second slope.Complete reflection layer and part reflection layer are arranged to, and the light to be generated in layer structure provides humorous Shake chamber, and side wall is with the first slope extended from surface region layer and the second steeper slope extended from first slope. The full width at half maximum of at least one layer of thickness block diagram of layer structure is less than 5nm, which is the base for being located at least surface region layer The thickness on corresponding points that rule separates in sheet, the point are included in first of boundary between surface region layer and side wall Point and at least 10 microns of second point is separated on surface region layer and with the boundary.

Unquestionably, many other effective alternatives also will be it may occur to persons skilled in the art that.It will be understood that The present invention is not limited to the embodiment and cover for a person skilled in the art it is obvious, belong to appended claims purport With the modification of range.

Claims (38)

1. a kind of photoelectric device, the substrate of the dyke structure including limiting trap with superficial layer and on the superficial layer, dike Portion's structure includes the side wall of electrically insulating material and the region with the encirclement superficial layer and thus limits trap, the superficial layer area Domain includes first electrode, and the device further include second electrode and between the first electrode and second electrode half Conductive material, the device have optical cavity, including：

Complete reflection layer；

Part reflection layer；And

Including at least one layer of layer structure, at least one layer in the layer structure is solution processable layer, this layer of structure includes institute Semiconductive material is stated and between complete reflection layer and part reflection layer, wherein the surface region layer is included wherein One reflecting layer, and the solution processable layer is located on the surface region layer and the first slope and second of the side wall On slope,

Wherein complete reflection layer and part reflection layer are arranged as the light generated in layer structure and provide resonator,

Wherein：

The side wall has the first slope that extends from the surface region layer and from the second slope that the first slope extends, Wherein described first slope does not have that second slope is steep, and half of at least one layer of thickness block diagram in the layer structure High overall with is less than 5nm, and the thickness is on each point that the substantially rule of at least described surface region layer separates Thickness, the point include first point of the boundary between the surface region layer and the side wall and in superficial layer areas At least 10 μm of second point is separated on domain and with the boundary.

2. photoelectric device as described in claim 1, wherein the thickness includes the thickness of solution processable layer.

3. photoelectric device as claimed in claim 1 or 2, it is configured to emit when on to have in CIE color spaces and is less than Or the light of the maximum aberration equal to 0.02.

4. photoelectric device as claimed in claim 1 or 2, it is configured to emit when on to have in CIE color spaces and is less than Or the light of the maximum aberration equal to 0.01.

5. photoelectric device as claimed in claim 1 or 2, wherein：

Complete at least one of reflection layer and part reflection layer include one of the first electrode and second electrode；With/ Or

The optical cavity includes microcavity；And/or

The first slope has the ramp angle for being less than or equal to 20 degree relative to device surface layer.

6. photoelectric device as claimed in claim 5, wherein the first electrode includes part reflection layer.

7. photoelectric device as claimed in claim 5, wherein the first slope has is less than 10 relative to device surface layer The ramp angle of degree.

8. photoelectric device as claimed in claim 1 or 2, wherein：

In the boundary with the second slope, first slope extends up to the dyke structural thickness less than 300nm；And/or

Second slope extends to the second dyke structural thickness of at least 300nm on superficial layer；And/or

First slope extends along superficial layer at least 1 μm of length.

9. photoelectric device as claimed in claim 8, wherein, in the boundary with the second slope, first slope extends up to Dyke structural thickness less than 200nm.

10. photoelectric device as claimed in claim 8, wherein at least one of first slope and the second slope along 100nm extremely The dyke structural thickness extension of 150nm.

11. photoelectric device as claimed in claim 8, wherein the second slope extends to the second of at least 1 μm on superficial layer Dyke structural thickness.

12. photoelectric device as claimed in claim 8, wherein the second slope extends along superficial layer at least 8 μm of length.

13. photoelectric device as claimed in claim 8, wherein side wall extend along superficial layer at least 10 μm of length.

14. photoelectric device as claimed in claim 1 or 2, wherein：

First slope extends to the first dyke structural thickness H1 and the second slope extends to the second dyke structural thickness H2, and second Dyke structural thickness includes the first dyke structural thickness, and wherein H1 is less than or equal to 0.3 × H2；And/or

At least one solution processable layer on the second slope, there is pinning point at the point that separates with first slope；With/ Or side wall extends to dyke structural thickness H, and on the surface region layer and the superficial layer closest to the point of pinning point it Between the shortest distance be at least 10 × H.

15. photoelectric device as claimed in claim 1 or 2, wherein dyke structure include at least one photoresist layer, wherein The photoresist layer has the point on the second slope and including fluorochemical.

16. photoelectric device as claimed in claim 15, wherein dyke structure include multiple photoresist layers, described photic anti- Losing oxidant layer has first slope.

17. photoelectric device as claimed in claim 15, wherein dyke structure include having fluorochemical and first slope With the photoresist layer on the second slope.

18. photoelectric device as claimed in claim 1 or 2, wherein the device is light emitting devices or light absorption device.

19. photoelectric device as claimed in claim 18, wherein the device is light absorption device.

20. photoelectric device as claimed in claim 19, wherein the light absorption device is organic photovoltaic devices (OPV).

21. photoelectric device as claimed in claim 18, wherein the device is light emitting devices.

22. photoelectric device as claimed in claim 21, wherein the light emitting devices is Organic Light Emitting Diode (OLED).

23. photoelectric device as claimed in claim 1 or 2, wherein the device is Organic Light Emitting Diode (OLED), and institute It states solution processable layer and includes the organic semiconductive materials for providing hole injection layer (HIL).

24. photoelectric device as claimed in claim 23, solution processable layer described in wherein at least one includes being located to carry For another organic semiconductive materials on the material of hole injection layer (HIL), and another organic semiconductive material Expect to provide middle layer (IL) or light-emitting layer (EL).

25. a kind of method for constructing photoelectric device, which is included with restriction trap on superficial layer and the superficial layer The substrate of dyke structure, the dyke structure include electrically insulating material and side wall with the region for surrounding the superficial layer and Thus trap is limited, the surface region layer includes first electrode, and the device further includes second electrode and positioned at the first electricity Semiconductive material between pole and second electrode, this method include：

Form the superficial layer for including the first reflection layer；

The dyke structure with the side wall is formed, the side wall includes the first slope extended from the surface region layer With from the second slope that the first slope extends；And

Optical cavity is formed by following operation：

Being formed has at least one layer and the layer structure on the first reflection layer, and at least one layer in the layer structure is Solution processable layer, the layer structure includes the semiconductive material, wherein forming the layer structure is included in surface region layer Organic solution is deposited on upper and side wall first slope and the second slope, to form the layer of solution processable, and dry institute The organic solution of deposit；And

The second reflection layer is formed on layer structure,

One in wherein described first reflection layer and second reflection layer is complete reflection layer and described first Reflection layer and second reflection layer the other is part reflection layer, first reflection layer and second light Reflecting layer provides resonator for the light generated in layer structure,

Wherein：

First slope is steep without the second slope, and half Gao Quan of at least one layer of thickness block diagram in the layer structure formed Width is less than 5nm, and the thickness is the thickness on each point that the substantially rule of at least surface region layer separates, described Point include first point of boundary between surface region layer and side wall and on surface region layer and with the side Boundary separates at least 10 μm of second point.

26. method as claimed in claim 25, wherein thickness include the thickness of solution processable layer.

27. the method as described in claim 25 or 26, for device configuration into when device is connected, emitting in CIE colors There is the light of the maximum aberration less than or equal to 0.02 in space.

28. the method as described in claim 25 or 26, for device configuration into when device is connected, emitting in CIE colors There is the light of the maximum aberration less than or equal to 0.01 in space.

29. the method as described in claim 25 or 26, wherein：

Complete at least one of reflection layer and part reflection layer include one in first electrode and second electrode；With/ Or

Optical cavity includes microcavity；And/or

Second slope is steeper than first slope, has surface energy at the point that wherein side wall separates on the second slope with first slope Amount is interrupted, wherein the organic solution deposited soaks first slope and the second slope until at the surface energy interruption Pinning point.

30. method as claimed in claim 29, wherein first electrode include part reflection layer.

31. method as claimed in claim 29 is included on solution processable layer and deposits at least another solution, wherein institute At least another solution is stated until all being soaked before the pinning point, and the dry at least another solution deposited.

32. the method as described in claim 25 or 26, wherein：

The device is light emitting devices or light absorption device；And/or

The device is Organic Light Emitting Diode (OLED), and the organic solution is used to provide hole injection layer (HIL).

33. method as claimed in claim 32, wherein the device is light absorption device.

34. method as claimed in claim 33, wherein the light absorption device is organic photovoltaic devices (OPV).

35. method as claimed in claim 32, wherein the device is light emitting devices.

36. method as claimed in claim 35, wherein the light emitting devices is Organic Light Emitting Diode (OLED).

37. method as claimed in claim 32, it is included on the solution processable layer and the first electrode and the second electricity At least another solution processable layer is formed between pole, which sends out for providing middle layer (IL) or light Penetrate layer (EL).

38. the method as described in claim 25 or 26, wherein：

When at least one of second slope for being deposited on first slope and pinning point being extended to from first slope is upper, You Jirong The contact angle of liquid is 10 ° or smaller；And/or

When being deposited on the region of dyke structure extended from pinning point far from first slope, the contact angle of organic solution is 50 ° or bigger.