CN104377312A - Film profiles - Google Patents

Abstract

The invention relates to film profiles. A photoelectric device comprises a first electrode, a second electrode, a semiconductive material arranged between the first electrode and the second electrode, and an electric insulation dam structure defining a trap covering a surface layer area. The surface layer area comprises the first electrode. The photoelectric device is provided with an optical cavity including a complete light reflecting layer, a part light reflectively light and a layer structure comprising at least one solution processible layer. The layer structure comprises the semiconductive material and is arranged between the complete light reflecting layer and the part light reflecting layer. The surface layer area comprises a reflecting layer and the solution processible layers are arranged on the surface layer area, the first slope and the second slope of the side wall. The complete reflecting layer and the part light reflecting layer are arranged to provide resonant cavities for light generated in the layer structure. The side wall is provided with a first slope extending from the surface layer area and the steeper second slope extending from the first slope.

Description

Film profile

Technical field

The present invention relates generally to the photoelectric device comprising substrate, wherein substrate has dyke structure superficial layer and described superficial layer limiting trap, also relate to the method that structure comprises the photoelectric device of substrate, wherein substrate has the dyke structure of superficial layer and the restriction trap on described superficial layer.

Background technology

Extensively investigated for the manufacture of electronic device, relate to method (solution processing) from solution deposition active component.If active component is from solution deposition, then this active component is preferably included in the desired region of substrate.This can realize by providing the substrate of dyke (bank) layer comprising composition, and the bank layer of composition limits trap, and in described trap, active component can from solution deposition.Trap comprises solution when it is dry, and active component is retained in the region of the substrate limited by trap.It is integrated that this can allow with base plate, and the pattern step after not needing deposit, the pattern step after deposit can increase cost significantly.

Have been found that these methods are for being useful especially from solution deposition organic material.Organic material can be conduction, semiconductive, and/or photoelectric activity, makes them can detect light at electric current by utilizing emitted light time them or by generating electric current when light strikes on them.The device of these materials is used to be called as organic electronic device.If organic material is light-emitting material, then device is called as organic light-emitting device (OLED).In addition, solution processing allows thin-film transistor (TFT) and the especially low cost of OTFT (OTFT), low temperature manufacture.In such devices, be desirably in correct region especially and comprise organic semiconductor (OSC) in the passage of especially device, and the dyke limiting trap can be provided, to comprise OSC.

Some device may need more than single solution deposition layer.Typical OLED, the OLED such as used in the display, can have two-layer organic semiconducting materials-one can be one deck luminescent material, such as light emitting polymer (LEP), and another layer can be one deck hole mobile material, such as polythiofuran derivative or polyaniline derivative.

If such as, one or more device layer shows heterogeneous thickness across device active region, then the light with dyke structure is launched or absorbs device may have poor color and/or light emission effciency consistency across active region.Generally speaking, device can be designed to launch or absorb the light of single general color, such as, red, green or blue, its center specific target frequency and/or put in CIE color space.Such as, device can be designed to have the preferred coordinates u ' in CIE 1976 color space (CIELUV) and v '.But, need to improve the color homogeneity in existing device.Similarly, the whole efficiency of electrical-optical power conversion in device (or conversely) (specifically arrive target light frequency or frequency spectrum/from target light frequency or frequency spectrum and/or this conversion to the light for providing target CIE point) or the uniformity of efficiency is needed to improve.

Further consider efficiency and cost, it should be noted that advantageously simple dyke structure has the homogenous material/layer of the liquid being designed to correspondingly comprise all these deposits.But, for the device liquid of all deposits to single dyke material and single pinning point, between the electrode of solution deposition layer either side, there is the risk of electric leakage paths or short circuit.Such as, in the OLED structure comprising anode-HIL-IL-EL-cathode construction, leakage current can flow between the anode and cathode through the borderline leakage paths of HIL.Similarly, leakage paths can be caused by very thin device stack in the hole injection layer (HIL) directly contacted at negative electrode in dyke, dyke or the point cantact being in pinning point.When be reversed drive and/or before turn, JV (Current density-voltage) curve of the device printed completely such as can show high-leakage (high electric current).When having intermediate layer (IL) and electroluminescence layer (EL) of spin coating (spin), because HIL is covered completely by the film of spin coating atop, so leak much lower.This can cause much lower efficiency.

Current low leakage device needs two dyke system usually, to be separated anode pinning point from negative electrode.But compared with two dyke architectural framework, single dike portion can reduce complexity.Additionally or as an alternative, the single dike portion of photoetching process composition is utilized can to provide cheap method for pixel (dyke) limits.But this dyke can allow anode region be exposed to hydrocarbon (resist residue) and/or provide single fluid pinning point for the finished layer of all solution (HIL, IL and EL).The HIL of high connductivity, adds the short path length between Anodic (ITO) surface and the consistent pinning point of HIL-IL-EL-negative electrode, has demonstrated and can cause high-leakage device.

Thus, expect to provide permission different liquids to be included in the modified node method in trap and/or the processing procedure for constructing this structure.The structure improved can have wherein such as any one or more one or more advantages following: the color homogeneity improved across device, the electricity of lower and/or adjustable (tuneable) leaks, the overall power efficiency improved across device active region and/or efficiency uniformity, the lifetime stability improved (such as, OLED launches) (preferably, such as, more stable and/or the more repeatably device brightness about life test), compacter device, and the structural complexity reduced and/or ability (wherein any one time that device manufacture all can be caused to improve or cost efficiency of being constructed with less treatment step, the device output improved, repeatable, about the demand of the volume of constituent material and/or the reduction of quantity, this can such as cause cost to reduce).

In order to use understanding in the present invention, refer to following discloses content:

-US 8,063,551 (Du Pont);

-US2006/197086 (Co., Ltd of Samsung);

-US2010/271353 (Sony);

-WO2009042792 (inventor Tsai Yaw-Ming A etc.);

-US2007/085475 (semiconductor energy laboratory);

-US7799407 (Seiko Epson company);

-US7604864(Dainippon Screen MFG)；

-WO9948339 (Seiko Epson company);

-JP2007095425A (Seiko Epson company);

-WO2009/077738 (in the PCT/GB2008/004135 that on June 25th, 2009 announces, inventor Burroughes and Dowling); And

-WO2011/070316 A2 (in the PCT/GB2010/002235 that on June 16th, 2011 announces, inventor Crankshaw and Dowling).

Summary of the invention

According to a first aspect of the invention, provide the photoelectric device comprising substrate, substrate has dyke structure superficial layer and described superficial layer limiting trap, this dyke structure comprise electrical insulating material and the sidewall with the region surrounding described superficial layer to limit trap thus, surface region layer comprises the first electrode, and this device also comprises the second electrode and the semiconductive material between the first electrode and the second electrode, and this device has optical cavity, comprising: reflection layer completely, part reflection layer, and comprise the Rotating fields of at least one deck, layer described at least one is the layer of solution processable, this Rotating fields comprises described semiconductive material and between complete reflection layer and part reflection layer, wherein surface region layer comprises one of them reflector, and the layer of described solution processable is positioned on surface region layer and on the first slope of described sidewall and the second slope, wherein reflection layer and part reflection layer are arranged to completely, for the light generated in Rotating fields provides resonant cavity, wherein: described sidewall has the first slope extended from surface region layer and the second slope extended from the first slope, wherein the first slope does not have the second slope steep, and at least the full width at half maximum of the thickness block diagram of one deck is less than 5nm in Rotating fields, at least the rule substantially of surface region layer separate each point on thickness, described point comprises first point of the boundary between surface region layer and sidewall and to be positioned on surface region layer and to separate second point of at least 10 μm with described border.

By reducing the change of thickness, such as can improve and going out coupling (out-coupling), the uniformity of color and/or the efficiency of device from device.These advantages can be relevant with the performance of optical cavity, and this understands the photogenerated (absorption) in amplification layer structure usually, and therefore makes device more efficient.Specifically, optical cavity is preferably (absorption) light of generating in Rotating fields and forms standing-wave cavity resonator, such as, in the light emitting devices of such as OLED, and the gain media of cavity embracing layer structure and the feedback of light is provided.Generally speaking the resonant wavelength of optical cavity is determined by the physical size of cavity and physical attribute (such as, one or more refractive index value and/or one or more change).Resonant wavelength can by the thickness effect of the layer of solution processable; Thickness can cause the correspondence of resonant wavelength to change across the change of device active region and therefore cause device to launch widening of (absorption) frequency spectrum.Expect that the frequency spectrum being launched (absorption) by the light of device has narrow peak around target wavelength.This can realize by providing in the surface of the layer of deposit solution processable thereon substantially level and smooth transition, and transition is from dyke structure to superficial layer, to reduce or to avoid any varied in thickness of the solution processable layer be deposited on this transition.

Preferably, each thickness-is preferably in the direction vertical with superficial layer and/or be the thickness of difference in height on superficial layer-comprise solution processable layer.But, thickness can be comprise surface can the combination thickness of multiple adjacent layers of machined layer.Thus, such as, thickness can be HIL (hole injection layer), IL (intermediate layer) and the central one or more thickness of EL (luminescent layer) of OLED.Preferably, block diagram comprises the thickness measurement across active region (more preferably, specifically only across the Breadth Maximum (extent) of surface region layer and/or cross-layer structure or solution processable layer).Block diagram can by what obtain measurement result to obtain in each in the middle of multiple regions (such as square or rectangle) of surface region layer, and described region is the adjacent area of grid or grid and is preferably shaped comparably and given size.This can cause the such as 30-300 measurement result at each some place separated across whole surface region layer rule, and wherein whole superficial layer can have maximum length or the diameter of such as 40-70 μm.Full width at half maximum is more desirably be less than 4,3,2 or 1nm.

Preferably, this thickness measurement of at least one deck of Rotating fields obtains at the some place at least along (virtual) straight line, and this line extends in the direction on (such as, definitely) whole surface region layer at least substantially.Thus, measurement result preferably includes the measurement result at least on the relative peripheral point of surface region layer.But preferably, this thickness measurement obtains at the some place of the two-dimensional grid of the substantially whole 2 dimensional region covering at least surface region layer, and therefore comprise the measurement result on more than two peripheral point of surface region layer.In an embodiment, this line or grid can extend beyond surface region layer further, such as, extend to the relative peripheral point of sidewall, trap and/or Rotating fields, make measurement result comprise measurement result on this peripheral point.Preferably, the first electrode extends across whole surface region layer, and it therefore can the active region of define device.

Preferably, the any change being arranged in the thickness of the solution processable layer on surface region layer allows device to be transmitted in the light that CIE color space has the maximum aberration being less than or equal to 0.02, the boundary of described any varied in thickness at least between surface region layer and the first slope when connecting.This varied in thickness is preferably zero, such as, varied in thickness on a region between superficial layer and dyke structure the either side at interface extend such as 1 μm, 500nm or 300nm centered by this interface.In order to provide more level and smooth transition, first slope crossing with superficial layer is preferably very thin and/or intersect with a shallow angle and superficial layer.In general, second slope extends from first slope with steeper angle, to allow the larger dyke structural thickness comprising trap in compact device.Second slope extends preferably to the flat surface of dyke structure, and this flat surface is substantially parallel with superficial layer.

When on, this device is preferably transmitted in the light in CIE color space with the maximum aberration being less than or equal to 0.02.But the maximum aberration in CIE color space can more preferably be less than or equal to 0.015,0.01 or 0.005.This aberration can be in color space (preferably 1976 color spaces (" CIELUV ")) launch (absorption) color between Euclidean distance.

Photoelectric device can be provided further, wherein substantially (such as, the light that transmission (transmit) receives be less than 5 or 10%, but preferably reverberation 100%) completely at least one comprises one of the first electrode and the second electrode in the middle of reflection layer and part reflection layer, preferably the first electrode comprises part reflection layer (such as, for bottom emitting device; For top-emitting devices, the second electrode can comprise part reflection layer).Such as, partially reflecting layer can be provided on the electrode of the superficial layer of bottom emitting device (such as, anode).In an embodiment, partially reflecting layer is between substrate and the first electrode.Partially reflecting layer is preferably (such as, silver) of metal, preferably blanket deposit instead of composition.For bottom emitting device, substrate is transparent (such as, comprising glass) usually substantially.Similarly, the electrode of superficial layer is preferably transparent at least partly, such as, can be the ITO of blanket deposit and/or composition.

Can provide photoelectric device further, wherein optical cavity comprises light microcavity.This microcavity can be very thin, such as, has only several microns or be less than 1 μm, the gross thickness of 500nm, 300nm, 200nm or 100nm; This thickness can correspond to the thickness of Rotating fields.This small size can cause and make device launch the quantum effect that narrows of (absorption) frequency spectrum (such as, relate to spontaneous emission rate and/or atom behavior), in other situation, only formed by the standing wave in optical cavity and carry out the frequency spectrum that determining device launches (absorption).

Microcavity can be provided by the reflexive extra play of deposit (such as silver layer).This layer can between main substrate material (such as glass) and the first electrode (such as anode), and its Anodic can comprise ITO.Another electrode can provide the relative reflecting surface of microcavity.

Can provide photoelectric device further, wherein, the first slope has the ramp angles being less than or equal to 20 degree relative to device surface layer, is preferably less than 5,10 or 15 degree.

Photoelectric device can be provided further, wherein the first slope extends up to the dyke structural thickness being less than 300nm at the boundary with the second slope, preferably be less than 200nm, preferably, wherein in the middle of the first slope and the second slope, at least one extends along dyke structural thickness 100nm to 150nm.More generally, wherein multiple layers form dyke structure and have respective slope, and preferably at least one layer has the thickness of 100-150nm.Such as, the difference in height of (traverse) is crossed preferably in the scope of 100-150nm by the first slope and/or the second slope.

Can provide photoelectric device further, wherein the second slope extends to the second dyke structural thickness of at least 300nm on superficial layer, preferably at least 1 μm.The full-height of dyke is preferably enough thick, to stand RIE, such as, and at least 300nm.

Photoelectric device can be provided further, wherein the first slope extends beyond the length of at least 1 μm along superficial layer, preferably, wherein the second slope extends beyond the length of at least 8 μm along superficial layer, preferably, wherein sidewall (or at least the first slope and the second slope combination) extends beyond the length of at least 10 μm along superficial layer.

Photoelectric device can be provided further, wherein the first slope extends to the first dyke structural thickness (height on superficial layer) H1 and the second slope extends to the second dyke structural thickness H2 (total height on superficial layer, H1 is a part of H2), second dyke structural thickness comprises the first dyke structural thickness, and wherein H1 is less than or equal to 0.3*H2.

Photoelectric device can be provided further, wherein solution processable layer described at least one on the second slope, with the first slope separate (away from) some place there is pinning point.Preferably, when at least the second slope during deposited solution, contact angle for the formation of the solution of the solution processable layer be positioned on surface region layer is 10 ° or less, and/or, when when extending from the point on the second slope and exceeding deposited solution on the surf zone of the dyke structure of sidewall, the contact angle for the formation of the solution of the solution processable layer be positioned on surface region layer is 50 ° or larger.

Can provide photoelectric device further, wherein sidewall extends to dyke structural thickness H (total height on superficial layer), and the beeline on surf zone and superficial layer and between the immediate point of pinning point is at least 10*H.

Can provide photoelectric device further, wherein dyke structure comprises at least one photoresist oxidant layer.In the middle of this device, described photoresist oxidant layer can have the point on the second slope and comprise fluorochemical.These compounds as received from manufacture, can exist in photoresist agent solution, or can add the photoresist agent solution do not fluoridized to.Preferably, dyke structure comprises multiple photoresist oxidant layer, and described photoresist oxidant layer has the first slope, and/or dyke structure comprises the described photoresist oxidant layer with fluorochemical and the first slope and the second slope.

Device can be light emitting devices or light absorption device, preferably such as organic photovoltaic devices (OPV; Such as, solar cell) light absorption device, or the light emitting devices of such as Organic Light Emitting Diode (OLED).When device is OLED, described solution processable layer can comprise for providing hole injection layer (HIL; Moisture or not moisture) organic semiconductive materials, and preferably solution processable layer described at least one comprises the another kind of organic semiconductive materials be positioned at for providing on the material of HIL, this another kind of organic semiconductive materials is for providing intermediate layer (IL) or light-emitting layer (EL).

According to a second aspect of the invention, provide the method for structure photoelectric device, this photoelectric device comprises the substrate with dyke structure superficial layer and described superficial layer limiting trap, dyke structure comprises electrical insulating material and has the sidewall in the region surrounding described superficial layer, limit trap thus, surface region layer comprises the first electrode, and this device also comprises the second electrode and the semiconductive material between the first electrode and the second electrode, and the method comprises: form the superficial layer comprising the first reflection layer, form the described dyke structure with described sidewall, described sidewall comprises the first slope extended from described surface region layer and the second slope extended from the first slope, and by following formation optical cavity: formed and there is at least one deck the Rotating fields be positioned on the first reflection layer, layer described at least one is solution processable layer, Rotating fields comprises described semiconductive material, wherein form Rotating fields to be included on surface region layer and deposit organic solution on the first slope of sidewall and the second slope, to form the layer of solution processable, and the organic solution of dry institute deposit, and on Rotating fields, form the second reflection layer, one of them reflection layer is complete reflection layer and another reflection layer is part reflection layer, reflector provides resonant cavity for the light generated in Rotating fields, wherein: the first slope does not have the second slope steep, and at least the full width at half maximum of the thickness block diagram of one deck is less than 5nm in the Rotating fields formed, at least the rule substantially of surface region layer separate each point on thickness, described point comprises first point of the boundary between surface region layer and sidewall and to be positioned on surface region layer and to separate second point of at least 10 μm with described border.

With for first aspect similarly, thickness preferably includes the thickness of solution processable layer.By allowing the shallow slope of sidewall from superficial layer, the change of thickness can be reduced, advantageously improve color homogeneity and/or the efficiency of such as device thus.Thus, the method desirably can construct device to be transmitted in the light in CIE color space with the maximum aberration being less than or equal to 0.02 when connecting, more preferably be less than or equal to 0.015,0.01 or 0.05, this preferably refers to the maximum Euclidean distance between the color of device in 1976 CIE color spaces (CIELUV).

Can supplying method further, at least one wherein completely in reflection layer and part reflection layer comprises one of the first electrode and the second electrode, and preferably the first electrode comprises part reflection layer.

Can supplying method further, wherein optical cavity comprises microcavity.

Can supplying method further, wherein the second slope is steeper than the first slope, wherein sidewall on the second slope, the some place that separates with the first slope has surface energy and interrupts, the organic solution of wherein institute's deposit soaks the first slope and the second slope until be in the pinning point of surface energy interruption.In this case, the method can be included at least another kind of solution of deposit on solution processable layer, such as intermediate layer (IL) and/or the luminescent layer (LEL) comprising light emitting polymer (LEP), wherein this at least another kind of solution is until pinning point all soaks (wet out), and this at least another kind of solution of dry institute deposit.Can by process (treat) to provide border soaking of the second top, slope place and produce pinning point between non-wet surface.

Thus, embodiment can be provided for the pinning point of at least one solution processable layer (being preferably all pinned at multiple layers of same point), pinning point and surface region layer are separated by a paths, and this path is owing to having different slopes and off-straight along its whole length.This can reduce the risk of electric leakage paths or short circuit between electrode (such as, the anode of one or more solution deposition layer either side and negative electrode).Such as, in the OLED structure comprising anode-HIL-IL-EL-cathode construction, any leakage paths between the anode and negative electrode on the preferably border of higher resistive (highly resistive) HIL all increases.The path lengthened preferably has sufficiently high resistance, to prevent from likely making significantly such as in other situation, and the leakage that efficiency, reliability and/or life-span, color change etc. are degenerated.

More specifically consider the device architecture produced, it should be noted that, surface energy interrupts preferably by soaking (such as, hydrophilic) and not soaking one or more process steps generations of causing border between (such as, hydrophobic) region.This border is preferably at the top place on the second slope.The top on the second slope is preferably adjacent with the flat surface of dyke structure, and this flat surface is relative with superficial layer and parallel.In any case, surface energy interrupts all preferably away from the first slope and therefore away from surface region layer.

The method can be included at least another kind of solution of deposit on solution processable layer, such as, EL (luminescent layer) and/or IL (intermediate layer), wherein this at least another kind of solution is until pinning point all soaks, and this at least another kind of solution of dry institute deposit.Thus, multiple this solution processable layer can have identical pinning point.

Device can be light emitting devices or light absorption device, the preferably light absorption device of such as organic photovoltaic devices (OPV), or the light emitting devices of such as Organic Light Emitting Diode (OLED).When device is OLED, organic solution can be for providing hole injection layer (HIL; Moisture or not moisture), preferably the method is also included on described solution processable layer and between the first electrode and the second electrode and forms at least another solution processable layer, and this another solution processable layer is for providing intermediate layer (IL) or light-emitting layer (EL).

Can supplying method further, wherein, when being deposited to the first sloped region and extending at least one the second sloped region of pinning point from the first slope, the contact angle of organic solution is 10 ° or less.This contact angle allows well soaking of surface usually.Additionally or as an alternative, when the region being deposited to the dyke structure extended away from the first slope from pinning point, the contact angle of organic solution is preferably 50 ° or larger.This contact angle does not allow well soaking of surface usually, that is, do not soak.

Contact the formation of pinning point particularly to consider the method, forming dyke structure can comprise: on the superficial layer of substrate, form the first bank layer comprising photoresist; Light-composited film the first bank layer of developing, with the region of exposed surface layer; The photoresist solution deposition fluoridized on the exposed region of the first bank layer and superficial layer, to form the second bank layer; Cure (bake), with the second bank layer of hardening, the fluorochemical wherein fluoridizing photoresist agent solution cures in process described the surface moving to the second bank layer, to increase the contact angle on organic solution and described surface; And light-composited film the second bank layer of developing, so that again exposed surface layer described region and expose the region of the first bank layer, the first bank layer region is made to have the first slope and the second bank layer region has the second slope, the contact angle wherein increased is higher than the contact angle on organic solution and the first slope and the second slope, and pinning point is in the boundary on the second bank layer surface of the fluorochemical with migration.The surface that compound moves in the process of curing can be described to " Free Surface " usually, that is, with the interface in external environment condition (such as space).As thisly fluoridized in any embodiment of photoresist utilizing, photoresist can be provided as from photoresist manufacturer to be fluoridized, or this processing procedure can have fluorochemical is added to the additional step not fluoridizing photoresist.In any case, after the second bank layer sclerosis, the second bank layer all preferably includes the fluorochemical than the first bank layer higher concentration.In addition, after the second bank layer development is with the part removing the second bank layer, is part of " Free Surface " part before, preferably there is the border of soaking/not soaking, it has the edge of the second bank layer exposed by removing, and this edge is the part of sidewall.Thus, except the sidewall of two inclination, pinning point can also be produced.

As an alternative, in an embodiment, form dyke structure can comprise: fluoridize photoresist agent solution by deposit on superficial layer and form dyke structure sheaf, and the solution of dry institute deposit is to harden dyke structure sheaf, the fluorochemical wherein fluoridizing photoresist agent solution cures in process described the surface moving to dyke structure sheaf, to increase the contact angle on organic solution and described surface; Deposit on dyke structure sheaf dry photoresist oxidant layer, and light-composited film photoresist oxidant layer of developing; Dry etching steps, to etch dyke structure sheaf by the photoresist oxidant layer of development, with exposed surface layer region, makes the dyke structure sheaf after etching have the sidewall of the surface region layer that encirclement exposes and comprise the first slope and the second slope; And the photoresist oxidant layer of removing development, to expose the surface of dyke structure sheaf, the surface exposed comprises the fluorochemical of described migration, and wherein surface energy interrupts the interface between the sidewall after the exposed surface and etching of the fluorochemical comprising migration.Dry etching steps can comprise reactive ion etching, preferably uses oxygen plasma.With similar above, be the part of bank layer " Free Surface " part before, preferably have the border of soaking/not soaking, it has the edge of the bank layer exposed by the part of development removing bank layer, and this edge is the part of sidewall.Thus, except the sidewall of two inclination, pinning point can also be produced.

In such an embodiment, form dyke structure can comprise: development is light-composited film dyke structure sheaf also, to expose by the surface region layer of the side walls enclose of dyke structure sheaf, deposit photoresist agent solution on the dyke structure sheaf that wherein deposit photoresist oxidant layer is included in light-composited film on dyke structure sheaf, and photoresist oxidant layer of developing comprises exposed surface layer region again, and the dry etching steps of exposed surface layer region extends the region of exposure by thinning dyke structure sheaf, form described first slope and the second slope thus.

As an alternative, in such an embodiment, light-composited film photoresist oxidant layer can comprise the photic resist layer of mask radiation by having substantially not regional transmission, fractional transmission region and regional transmission (at least having the transmissivity larger than fractional transmission region) completely substantially; And photoresist oxidant layer of developing is comprised the region that removes photoresist completely and partly removes the photoresist region being exposed to radiation by part regional transmission.

In another kind of processing procedure embodiment, form dyke structure and comprise: fluoridize photoresist agent solution by deposit on superficial layer and form bank layer; Cure, with bank layer of hardening, wherein the fluorochemical of photoresist agent solution cures in process described the surface moving to bank layer, increases organic solution and surperficial contact angle thus; The bank layer of light-composited film sclerosis, this light-composited film comprises first area by the first radiation dose radiation bank layer and with the second area of the second radiation dose radiation bank layer, described second radiation dose is less than the first radiation dose; Development bank layer, the region of the bank layer with described second radiation dose radiation is partly removed with the region of exposed surface layer, thus, the removing of this part provides to surround and is exposed region and has the sidewall on the first slope and the second slope, and wherein pinning point is in the boundary between the bank layer surface of the fluorochemical with migration and sidewall.Depend on and use negative photoresist or positive photoresist, first area can on surf zone or on the dyke structure division that will retain.Part removes the region that preferably thinning extends to the bank layer of surface region layer, also to provide supporting structure along the longer path at the solution processable layer edge that will be deposited in trap thus to along sidewall.

In this processing procedure embodiment, light-composited film can comprise by the first mask and the second mask radiation simultaneously bank layer, wherein comprise the complete regional transmission radiation first area by the first mask and the second mask with the first dose first area, and comprise by each at least part of regional transmission radiation second area in the middle of the first mask and the second mask with the second dose second area.At least part of regional transmission can comprise the complete regional transmission of the first mask and/or the fractional transmission region of the second mask.At least one in these regions preferably has the fractional transmission region of the transmission gradient (gradient).

As an alternative, in this processing procedure embodiment, light-composited film comprises the mask radiation bank layer by having fractional transmission region and more (be preferably complete) regional transmission, wherein comprise the area radiation first area by more transmission with the first dose first area, and comprise by part regional transmission radiation second area with the second dose second area.

As an alternative, deposit reflector layer on the region that this processing procedure embodiment is included in superficial layer, wherein: deposit is fluoridized the deposit on reflector layer and on superficial layer of photoresist agent solution and fluoridized solution; And light-composited film comprises by mask radiation bank layer, wherein radiation first area is comprised first area and absorbs the part of the first dosage directly received by mask and absorb and to receive from the first mask and to be reflected back the part of the dosage first area by reflector layer.

Preferred embodiment is limited in appended dependent claims.

In the middle of the above each side of preferred embodiment any one or more and/or above optional feature central any one or more can with any permutation and combination.

Accompanying drawing explanation

In order to understand the present invention better and in order to illustrate how the present invention can realize, now will by examples reference accompanying drawing, wherein:

Fig. 1 a shows example constructions method, and wherein fluoridizing dyke material, to be spun to anode (such as ITO) upper and by light-composited film, to provide trap;

Fig. 1 b shows the use of single masks, has fractional transmission region in the mask, to limit long anode-cathode distance;

Fig. 1 c show the dyke pixel of the RIE composition with short sidewall path implementation (arrive above middle figure) and, in contrast, according to providing the pixel of the embodiment of longer path (nethermost figure);

Fig. 1 d shows the device with the dyke formed from the processing procedure of Fig. 1 a or 1b;

Fig. 2 shows life-span (device stability) figure;

Fig. 3 a shows double-developing processing procedure;

Fig. 3 b shows the dual masks processing procedure with single patterned layer;

Fig. 3 c shows single masking part transmission processing procedure with single patterned layer;

Fig. 3 d shows and utilizes reflector space and the single mask process with single patterned layer lower than threshold exposure dosage;

Fig. 4 a-4e shows the scanning electron microscope image of the support dyke sectional view of embodiment;

Fig. 5 shows across device active region HIL+IL thickness and the change of launching CIE value;

Fig. 6 shows the elimination of the expectation to precipitous dyke structure boundary; And

Fig. 7 shows the block diagram of the hole injection regions thickness measurement of standard and shallow dyke embodiment.

Embodiment

Generally speaking, the layer of example OLED embodiment can be as follows:

Substrate, such as glass, preferably have the superficial layer that comprises ITO (80nm) electrode and alternatively such as, for the formation of the reflector of microcavity, Ag

HIL (hole injection layer)=utilize is from the ND3202b ink jet printing in Nissan chemical plant

IL (intermediate layer)

EL (luminescent layer), comprises light emitting polymer LEP, such as green emitting polymer.

Generally speaking embodiment provides single dike portion architectural framework, such as, has longer path, reduces leakage current thus.For OLED, this path can between anode surface (such as, ITO) and the consistent fluid pinning point of HIL-IL-EL.These longer paths along higher resistive HIL can be that any potential parasitic leakage current produces higher resistive path and/or produces non-emissive edge devices diode.This dyke structure has proved the improvement to OLED lifetime stability.

The processing procedure that the multiple dyke that expection is used for this embodiment in the following description manufactures.Such as: the hydrophobic dyke that (i) develops with auxiliary layer composition and partial reactive ion(ic) etching (RIE); (ii) there is the hydrophobic dyke of non-composition of the pixel edge that the part for RIE mask layer exposes; (iii) double-developing processing procedure; (iv) there is the dual masks processing procedure of single patterned layer; V () has single masking part transmission (leakage) processing procedure of single patterned layer; And (vi) utilizes reflector space and the single mask process with single patterned layer lower than threshold exposure dosage.

The example of these processing procedures can provide the hydrophobic dyke of the single development of the support with part oxygen plasma etch.Advantageously, the hydrophobic dyke of single development and follow-up pattern step allow oxygen plasma to clean ITO region and partly etch the pre-qualified amount of dyke.ITO and partially-etched dyke are preferably hydrophilic, to allow HIL until the non-etching area of hydrophobic dyke all soaks.A district of HIL is below until HIL pinning point all has dyke, and this pinning point will be shared with IL and EL.Such as when using the HIL of higher resistive, by long and preferably device programmable distance active anode is advantageously separated with negative electrode, thus cause lower electricity to leak.

Thus, the single dike portion architectural framework for OLED can improve by providing the longer path between anode surface (ITO) and anode surface and HIL-IL-EL consistent fluid pinning point of soaking.This longer path can be that any potential parasitic leakage current produces higher resistive option.Embodiment allows anode-cathode path to lengthen in a controlled manner, and therefore this embodiment is adjustable (tuneable), and to reduce parasitic leakage current, this correspondingly can improve device efficiency.

Additionally or as an alternative, this processing procedure can reduce structural complexity relative to two dyke architectural framework.

Fig. 1 a shows example constructions method, wherein the dyke material fluoridized (dyke structure sheaf 12) is spun on anode (superficial layer 11) (such as ITO), and by light-composited film, to provide trap (region see above surface region layer 13).Then, the photoresist oxidant layer 14 on dyke material by light-composited film, and performs additional processing procedure, to remove a district of dyke, lengthened insulative dyke support thus.This additional processing procedure can comprise the applied reactive ion etching being etched through the part of dyke material.Photoresist is removed after this additional processes.Thus, change the profile of the dyke material of the edge at trap, make the path that profile provides longer.As by Fig. 1 a along shown by the only illustrative fine rule of the first slope s1 and the second slope s2, etching causes the more long circuit footpath on the surface 15 exposed by removing photoresist.

Alternative approach shown in Fig. 1 b uses single masks, has fractional transmission region in the mask, to limit the anode-cathode distance of the length of dyke support; RIE step preferably etches the pixel edge that there is thin positivity mask layer.Due to thin mask layer, RIE can etch the pixel at the edge with the pixel being exposed to plasma.Changed the mask design size of the dyke pixel of development by the size of the otch relative to RIE composition, sharp can adjust the amount of anode-cathode distance and parasitic leakage current therefore in this way.This is contrary with simple light-composited film dyke pixel and/or simple RIE composition dyke pixel, in light-composited film dyke pixel and RIE composition dyke pixel, each pixel usually will provide the short path length of anode to negative electrode (blue region) and length can not adjust usually.Specifically, Fig. 1 b shows superficial layer 21, dyke structure sheaf 22, surface region layer 23, photoresist oxidant layer 24, slope s1 and s2, and surface 25.

(Fig. 1 c show the dyke pixel of the RIE composition with short sidewall path (arrive above middle figure) structure and, in contrast, according to the structure of pixel of embodiment providing longer path (nethermost figure)).

Fig. 1 d shows the device with the dyke formed from processing procedure embodiment as above, and comprises another solution processable layer L2 that solution processable layer L1 that form is HIL (hole injection layer) and form are IL (intermediate layer) and/or LEP (light emitting polymer) layer further.As seen from Fig. 1 d, HIL, IL have consistent pinning point with LEP fluid.IL and/or EL layer can be covered by EIL (electron injecting layer), and EIL correspondingly can be covered by cathode layer.Preferably, the pinning point of this EIL not inclusion layer L1 and L2, but cover these layers and extend on the adjacent area of dyke structure.At shape-preserving coating (coat) EIL so that in the embodiment extended on described layer and adjacent region, cathode layer can preferably directly be deposited on EIL.

In view of the above, formed with the two dyke systems being such as separated anode pinning point from negative electrode and contrast, embodiment provides the single dike portion structure with long insulating support.Single hydrophobic dyke can be used and follow-up patterning process is used for elongating dyke support.In an embodiment, ITO and dyke support can be hydrophilic, thus allow HIL until the pre-qualified point (ink pinning point) that dyke becomes hydrophobic all soaks.A district of HIL will below until HIl pinning point all has dyke, and it will share this pinning point with IL and LEP.By using higher resistive HIL, active anode can separate long (and being that device is programmable) distance with negative electrode.

Embodiment allows anode-cathode path to increase in a controlled manner and therefore provides the adjustable processing procedure reducing parasitic leakage current, and this causes device illumination more stable (and can repeat) about life test.In contrast, the method for the cheapness that pixel (dyke) limits can be provided for by standard lithographic processes or more complicated but that the RIE of standard (reactive ion etching) processing procedure is formed single dyke.But these two kinds of standard techniques all can leave short anode-cathode path in pixel (device) edge.Show, the short path length (short support) between anode (ITO) surface and the consistent pinning point of HIL-IL-EL-negative electrode causes the device of the instability when device drives in time.

As an alternative, Fig. 1 a can be considered to the processing procedure stream embodiment in the single dike portion shown for having long stent.This processing procedure relates to two step patterning process to produce causeway portion support.Support can be controlled by assisted drawing step from anode (ITO) to the length of ink pinning point, and the degree of depth as support can be controlled to provide the abundant electric isolution with anode.By changing the mask design size of the dyke pixel of development relative to the Pixel Dimensions of auxiliary partially patterned step, this embodiment can be utilized to adjust the amount of anode-cathode distance (see only illustrative fine rule) and parasitic leakage current therefore.Anode-cathode short path length (<1 μm) will be usually provided and length usually compared with the simple optical composition dyke pixel of unadjustable (except by except dyke height) or simple R IE composition dyke pixel with such as each, this embodiment produces long stent device (such as, >2 μm).

Longer anode also can dyke is higher to be realized by making to cathode distance, but this generally will have adverse effect at pixel edge place to HIL-IL-EL profile, make them thicker and cause uneven transmitting.

Preferably, HIL, IL of embodiment all have consistent pinning point with EL.This can cause the long leakage paths from anode to negative electrode, and wherein negative electrode is HIL (conductive hole injecting layer) crossing with metallic cathode (meet) place.By growing horizontal HIL distance as above, minimize this impact by using higher resistive HIL and being then separated anode (ITO) from negative electrode.

Consider device result, the device stability during life test demonstrates significant improvement.In an embodiment, by being increased to the resistance (path) of the point that HIL-IL-EL intersects, long stent significantly reduces pixel edge diode effect (the emanative thin diode of these right and wrong).

Fig. 2 shows life-span (device stability) figure.Can see, the initial bright ripple (increasing brightness with fixing electric current) of single dike portion-short filter holder means (dashed curve) is from a device to another device marked change.This likely causes owing to there is vertical leakage paths, " is burnt ", thus cause electric current to redistribute at test period.In fig. 2, single dike portion-long stent (full curve) shows the more tight distribution of bright wave amplitude, this means that this effect may not be relevant to leakage current.Likely utilize this dyke assessment material and processing procedure stability.Have single dike portion-long stent to arrange, the life-span (device degradation) is more predictable and does not far rely on pixel-edge devices effect.Thus, there is the verified improvement relating to OLED lifetime stability of the hydrophobic dyke of list of long stent.

Consider complex disposal process, it should be noted that and reduce to leak by producing the single dike portion method with long insulating support, the processing procedure method of simplification can produce the hydrophobic dyke of long stent list, and/or reduces complexity relative to two dyke architectural framework.Advantageously, the embodiment of this simplification allows anode-cathode path to increase in a controlled manner, and therefore adjustably reduces parasitic leakage current, and parasitic leakage current reduces device efficiency.Embodiment covers the alternative method for simplifying realizing single dike portion pixel.

Further consider complex disposal process, the processing procedure method of Fig. 1 a relates to the hydrophobic dyke of the development using auxiliary layer composition and partial reactive ion(ic) etching (RIE).Two photoetching composition circulations (such as: clean, cure, apply, cure, expose, cure, develop, dyke is solidified, apply, expose, develop) may be needed to add RIE step for this and positive corrosion-resisting agent peels off (strip).

But such as, add reactive ion etching with compared with the embodiment producing the long stent needed for OLED stability with such as using two light-composited film steps shown in Fig. 1 a, the processing procedure that the embodiment of Fig. 1 b can provide long stent list to develop hydrophobic dyke simplifies.

But as shown in Figure 1 b the first simplifies the hydrophobic dyke showing non-composition, and it has the pixel edge of the Partial exposure for RIE mask layer.This processing procedure eliminates the demand that the first composition circulates to mask and development step.

A kind of alternative simplification is shown in fig. 3 a, and this figure is described as double-developing processing procedure.This processing procedure can remove the demand of RIE and strip step.Preferably, the dyke of the first composition is thin, has the shallow slope entering pixel.Preferably, deposit (such as spin coating) first, thin bank layer, and harden.Then, this thin layer is also developed subsequently by light-composited film, and to expose the region of anode, this thin layer has the gentle slope to exposed region.Then, another bank layer be deposited, light-composited film developing.Advantageously, the material of the such as fluorine material (such as fluorin radical) in this another bank layer cures in processing procedure at this layer the top surface moving to this bank layer, makes this top surface can not can will be deposited to the solution wets of exposed region as the sidewall of this bank layer (preferably also lamellate sidewall).Specifically, Fig. 3 a shows superficial layer 31, first bank layer 32, surface region layer 33, second bank layer with surface 34 and slope s1 and s2.

It is carry out the alternative simplification of dual masks processing procedure with single patterned layer that Fig. 3 b shows form.This is single pattern step processing procedure, does not have positive type resist layer, but may need two photomasks and double-exposure step.Top mask (mask 2) can be the gradient mask limiting slope s1 and s2 more sharp.Specifically, Fig. 3 b shows superficial layer 41, bank layer 42, surface region layer 43, slope s1 and s2, and surface 45, and wherein region 44 is second areas of the bank layer relative to the one or more first areas between region 44 or below surface 45.

Fig. 3 c shows another kind of alternative simplification: single masking part transmission (leakage) processing procedure with single patterned layer.This is the single pattern step processing procedure not having positive type resist layer, but may need the photomask of more high cost, but has single step of exposure.Specifically, Fig. 3 c shows superficial layer 51, bank layer 52, surface region layer 53, slope s1 and s2, and surface 55, and wherein region 54 is second areas of the bank layer relative to the one or more first areas between region 54 or below surface 55.Fractional transmission (such as Subresolution characterization) mask can be the gradient mask limiting slope s1 and s2 more sharp.

Fig. 3 d shows and another kind of alternative simplification: single mask process with single patterned layer, utilizes reflective area and lower than threshold exposure dosage.This is the single pattern step processing procedure not having positive type resist layer, and is single step of exposure.The design of layer above can in conjunction with the reflective area being used for producing more high dose region, so that completely crosslinked (cross-link) dyke.Profit can adjust the amount of anode-cathode distance and therefore parasitic leakage current in this way.Specifically, Fig. 3 d shows superficial layer 61, bank layer 62, surface region layer 63, slope s1 and s2, and surface 65, and wherein region 64 is second areas relative to the one or more first areas below surface 65 of bank layer.

This is contrary with the single dike portion pixel of light-composited film and/or the dyke pixel of RIE composition, wherein the single dike portion pixel of light-composited film and/or the dyke pixel of RIE composition each usually by the short path length provided from anode to negative electrode (blue region) and normal length can not regulate – see Fig. 1 c.

About above-described distinct methods and embodiment, Fig. 4 shows various exemplary bracket dyke image.Fig. 4 a shows double-developing long stent dyke, Fig. 4 b shows the double-developing long stent dyke with HIL, Fig. 4 c shows the long stent dyke of the recess through RIE, Fig. 4 d shows dyke of singly developing, and Fig. 4 e shows list development dyke (short (nothing) support) with HIL.

The flat thickness profile of HIL+IL is desirably on microcavity platform and maximizes OLED performance.In the device of ink jet printing, thickness profile depends on the dyke structure of bottom.The preferred dyke profile of following detailed description, to realize flat thickness profile suitable in the device of single dike portion ink jet printing.Advantageously, this profile can provide the mild transition from dyke support to active region, allows the HIL of printing to form the flat profile of applicable microcavity OLED.

Consider the flat film profile utilizing mild support single dike portion+not moisture HIL particularly, embodiment can provide the mild transition from dyke support to active region, allows the HIL printed to form the flat profile of applicable microcavity OLED thus.The flat thickness profile of HIL+IL can be desirably in performance microcavity platform maximizing OLED.In the device of ink jet printing, thickness profile depends on bottom dyke structure.Embodiment provides the dyke profile for realizing appropriate flat thickness profile in the device of single dike portion ink jet printing.

The accurate control that maximum performance generally needs microcavity OLED intima-media thickness and profile is realized in the color dot that the best is possible.In addition, if there is the remarkable inhomogeneities of HIL+IL layer profile, then by exist non-optimal go out coupling region and performance by impaired.

Such as, for the device of ink jet printing, the width section of HIL+IL thickness shown in Figure 5.Can see, Comparatively speaking the fringe region of pixel and central area show significant thickening.CIE coordinate offsets from target color point in that region.This causes integral device performance impairment.

Develop a kind of dyke type to minimize heavy-edge amount, and therefore improve the performance of printing.Because HIL can not closely follow dyke profile, the sharply transition from support to ITO causes edge to thicken.

Figure 6 illustrates the embodiment with mild dyke support, be included in the close description in the region irised out on the top in figure below, wherein, compared with the embodiment (left-hand side) not having this decline, below right-hand side, there is shown mild decline.

Use this mild support dyke type to illustrate and maximise device performance on the platform of ink jet printing, make it and SC (spin coating device) data (data shown in the device of transmitting green light) have comparativity:

Wherein DE=(u ' v '), uses u ', the v ' definition of CIE 1976 color space (" CIELUV ").The device that the table show the ink jet printing of such as mild support dyke device has the performance comparable with the device of spin coating.

In addition, thus, it should be noted that the conversion (that is, CIE1931 → CIE1976) of the CIE u ' v ' of CIExy to the CIELUV from 1931 CIE XYZ color spaces is provided by following formula:

$u^{\&prime;}=\frac{4X}{X+15Y+3Z}=\frac{4x}{-2x+12y+3}$

$v^{\&prime;}=\frac{9Y}{X+15Y+3Z}=\frac{9y}{-2x+12y+3}$

And use the u ' of CIELUV, aberration module DE that v ' defines provide by following formula:

$\begin{array}{c}\mathrm{dE}=\\ \sqrt{{\left(\mathrm{\&Delta;}{u}^{\&prime;}\right)}^2+{\left(\mathrm{\&Delta;}{v}^{\&prime;}\right)}^2}\end{array}$

That is, the Euclidean distance in CIE 1976 space.

For the embodiment of such as above " mild support dyke " device, CIEx and the y target for green emitted (NTSC) is 0.213 and 0.724 respectively.CIExy measurement result uses Minolta colorimeter to obtain, and dE uses CIExy to calculate.

DE=0.02 is acceptable preferred upper limit in embodiment, but, more can expect 0.005,0.01 or 0.015.

Fig. 7 shows display standard dyke than the embodiment with mild support dyke and has the block diagram in the thicker region of more vast scale.This block diagram be by the surface region layer across the side walls enclose by dyke structure on effective coverage, obtain at the some place detect thickness that rule separates.The device with " standard dyke " has the device with the long stent of substantial constant thickness shown in the upper figure being similar to Fig. 6.The device with " shallow dyke " has long stent, and this support is tapered towards the superficial layer of device, such as, has the first slope that angle is preferably less than 5,10,15 or 20 degree." shallow dyke " device has the thickness distribution narrower than " standard dyke " device, therefore allows more how controlledly in OLED to go out coupling (be into coupling for light absorption device).

A kind of photoelectric device comprises the first electrode, the second electrode and the semiconductive material between the first electrode and the second electrode, and limit the electric insulation dyke structure of the trap surrounding surface region layer, wherein surface region layer comprises described first electrode, this device has optical cavity, comprising: reflection layer completely; Part reflection layer; And comprising the Rotating fields of at least one solution processable layer, this Rotating fields comprises described semiconductive material and between described complete reflection layer and part reflection layer.Surface region layer comprises one of them reflector and solution processable layer is positioned on surface region layer and on the first slope of sidewall and the second slope.Complete reflection layer and part reflection layer are arranged to, and for the light generated in Rotating fields provides resonant cavity, and sidewall has the first slope extended from surface region layer and the second steeper slope extended from the first slope.The full width at half maximum of the thickness block diagram of at least one deck of Rotating fields is less than 5nm, this thickness is the thickness on the corresponding points that separate of the rule being substantially positioned at least surface region layer, and described point is included in first point of boundary between surface region layer and sidewall and separates second point of at least 10 microns with described border on surface region layer.

Certainly, other effective alternatives many also will it may occur to persons skilled in the art that.To understand, and the invention is not restricted to described embodiment and contain amendment that is obvious, that belong to claims purport and scope for a person skilled in the art.

Claims (15)

1. a photoelectric device, comprise the substrate of the dyke structure that there is superficial layer and limit trap on described superficial layer, dyke structure comprises electrical insulating material and has the sidewall in the region surrounding described superficial layer, and limit trap thus, this surface region layer comprises the first electrode, and this device also comprises the second electrode and the semiconductive material between described first electrode and the second electrode, and this device has optical cavity, comprising:

Complete reflection layer;

Part reflection layer; And

Comprise the Rotating fields of at least one deck, layer described at least one is solution processable layer, this Rotating fields comprises described semiconductive material and between complete reflection layer and part reflection layer, wherein said surface region layer comprises one of them reflector, and described solution processable layer is positioned on described surface region layer and on the first slope of described sidewall and the second slope

Wherein reflection layer and part reflection layer are arranged as the light generated in Rotating fields and provide resonant cavity completely,

Wherein:

Described sidewall has the first slope extended from described surface region layer and the second slope extended from described first slope, wherein said first slope does not have described second slope steep, and the full width at half maximum of the thickness block diagram of at least one deck in described Rotating fields is less than 5nm, described thickness is the thickness on each point of separating of the rule substantially of at least described surface region layer, and described point comprises first point of the boundary between described surface region layer and described sidewall and separate second point of at least 10 μm with described border on surface region layer.

2. photoelectric device as claimed in claim 1, wherein said thickness comprises the thickness of solution processable layer.

3. photoelectric device as claimed in claim 1 or 2, be configured to be transmitted in the light in CIE color space with the maximum aberration being less than or equal to 0.02 when on, be more preferably transmitted in the light in CIE color space with the maximum aberration being less than or equal to 0.01.

4. photoelectric device as claimed in claim 1 or 2, wherein:

At least one in complete reflection layer and part reflection layer comprises one of described first electrode and second electrode, and preferably described first electrode comprises part reflection layer; And/or

Described optical cavity comprises microcavity; And/or

Described first slope has the ramp angle being less than or equal to 20 degree relative to device surface layer, preferably has the slope being less than 10 degree relative to device surface layer.

5. photoelectric device as claimed in claim 1 or 2, wherein:

At the boundary with the second slope, first slope extends up to the dyke structural thickness being less than 300nm, preferably the first slope extends up to the dyke structural thickness being less than 200nm, preferably, at least one the dyke structural thickness along 100nm to 150nm wherein in the first slope and the second slope extends; And/or

Second slope extends to the second dyke structural thickness of at least 300nm on superficial layer, extends preferably to the second dyke structural thickness of at least 1 μm; And/or

First slope extends beyond the length of at least 1 μm along superficial layer, and preferably, wherein the second slope extends beyond the length of at least 8 μm along superficial layer, and preferably, wherein sidewall extends beyond the length of at least 10 μm along superficial layer.

6. photoelectric device as claimed in claim 1 or 2, wherein:

First slope extends to the first dyke structural thickness H1 and the second slope extends to the second dyke structural thickness H2, and the second dyke structural thickness comprises the first dyke structural thickness, and wherein H1 is less than or equal to 0.3*H2; And/or

Solution processable layer described at least one on the second slope, the some place that separates with the first slope has pinning point; And/or sidewall extends to dyke structural thickness H, and described surf zone and described superficial layer are at least 10*H closest to the beeline between the point of this pinning point.

7. photoelectric device as claimed in claim 1 or 2, wherein dyke structure comprises at least one photoresist oxidant layer, and wherein said photoresist oxidant layer has the point on the second slope and comprises fluorochemical,

Preferably, wherein dyke structure comprises multiple photoresist oxidant layer, and described photoresist oxidant layer has the first slope,

More preferably, wherein dyke structure comprises the described photoresist oxidant layer with fluorochemical and the first slope and the second slope.

8. photoelectric device as claimed in claim 1 or 2, wherein said device is light emitting devices or light absorption device, the preferably light absorption device of such as organic photovoltaic devices (OPV), or the light emitting devices of such as Organic Light Emitting Diode (OLED).

9. photoelectric device as claimed in claim 1 or 2, wherein said device is OLED, and described solution processable layer comprises the organic semiconductive materials for providing hole injection layer (HIL),

Preferably, wherein solution processable layer described at least one comprises the another kind of organic semiconductive materials be positioned at for providing on the material of HIL, and described another kind of organic semiconductive materials is used for providing intermediate layer (IL) or light-emitting layer (EL).

10. one kind constructs the method for photoelectric device, this photoelectric device comprises the substrate with dyke structure superficial layer and described superficial layer limiting trap, described dyke structure comprises electrical insulating material and has the sidewall in the region surrounding described superficial layer, and limit trap thus, described surface region layer comprises the first electrode, and this device also comprises the second electrode and the semiconductive material between the first electrode and the second electrode, and the method comprises:

Form the superficial layer comprising the first reflection layer;

Form the described dyke structure with described sidewall, described sidewall comprises the first slope extended from described surface region layer and the second slope extended from described first slope; And

Optical cavity is formed by following operation:

Formed and there is at least one layer and be positioned at the Rotating fields on the first reflection layer, layer described at least one is solution processable layer, described Rotating fields comprises described semiconductive material, wherein forming described Rotating fields is included on surface region layer and deposit organic solution on the first slope of sidewall and the second slope, to form the layer of solution processable, and the organic solution of dry institute deposit; And

The second reflection layer is formed on Rotating fields,

One in wherein said reflection layer is complete reflection layer and another of described reflection layer is part reflection layer, and described reflector provides resonant cavity for the light generated in Rotating fields,

Wherein:

First slope does not have the second slope steep, and the full width at half maximum of the thickness block diagram of at least one deck in the Rotating fields formed is less than 5nm, described thickness is the thickness on each point of separating of the rule substantially of at least surface region layer, and described point comprises first point of the boundary between surface region layer and sidewall and separate second point of at least 10 μm with described border on surface region layer.

11. methods as claimed in claim 10, wherein thickness comprises the thickness of solution processable layer.

12. methods as described in claim 10 or 11, for device configuration is become, when device is connected, be transmitted in the light in CIE color space with the maximum aberration being less than or equal to 0.02, be more preferably transmitted in the light in CIE color space with the maximum aberration being less than or equal to 0.01.

13. methods as described in claim 10 or 11, wherein:

At least one in complete reflection layer and part reflection layer comprises one in the first electrode and the second electrode, and preferably the first electrode comprises part reflection layer; And/or

Optical cavity comprises microcavity; And/or

Second slope is steeper than the first slope, and the some place that wherein sidewall separates with the first slope on the second slope has surface energy and interrupts, and the organic solution of wherein institute's deposit soaks the first slope and the second slope up to the pinning point being positioned at this surface energy interruptions,

Be preferably incorporated at least another kind of solution of deposit on solution processable layer, wherein said at least another kind of solution is until all soak before this pinning point, and at least another kind of solution of dry institute deposit.

14. methods as described in claim 10 or 11, wherein:

Described device is light emitting devices or light absorption device, the preferably light absorption device of such as organic photovoltaic devices (OPV), or the light emitting devices of such as Organic Light Emitting Diode (OLED); And/or

Described device is OLED, and described organic solution is used for providing hole injection layer (HIL),

Be preferably incorporated on described solution processable layer and between described first electrode and the second electrode and form at least another solution processable layer, this another solution processable layer is used for providing intermediate layer (IL) or light-emitting layer (EL).

15. methods as described in claim 10 or 11, wherein:

When being deposited on the first slope and extending at least one the second slope of pinning point from the first slope, the contact angle of organic solution is 10 ° or less; And/or

When the region being deposited on the dyke structure extended away from the first slope from pinning point, the contact angle of organic solution is 50 ° or larger.