CN104377288B - A kind of LED production method for going out light with electrode - Google Patents
A kind of LED production method for going out light with electrode Download PDFInfo
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- CN104377288B CN104377288B CN201410551543.2A CN201410551543A CN104377288B CN 104377288 B CN104377288 B CN 104377288B CN 201410551543 A CN201410551543 A CN 201410551543A CN 104377288 B CN104377288 B CN 104377288B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
Abstract
The present invention discloses a kind of LED production method for going out light with electrode：Extension ray structure is epitaxially formed in epitaxial substrate, is delayed outside；The electrode zone of layer is made using mask, ICP etch process in light transmission passage, the light transmission passages of some rules is formed, and ICP etch depths is to exposing extension ray structure surface；In exposed extension ray structure surface evaporation light transmissive material until filling up light transmission passage, printing opacity cylinder is formed；Erosion removal light transmission passage makes layer, leaves printing opacity cylinder, and exposes extension ray structure；Extension ray structure surface forms welding stage electrode, and thickness exceedes printing opacity height of column；First electrode or second electrode surface as welding stage electrode is etched using ICP until exposing the upper surface of printing opacity cylinder；Delay outside and on photo structure, form back electrode, sliver forms light-emitting diode chip for backlight unit.The present invention can reduce welding stage electrode and be in the light area, improve the external quantum efficiency of light emitting diode.
Description
Technical field
LED technology field of the present invention, refers in particular to a kind of light emitting diode making side for going out light with electrode
Method.
Background technology
Light emitting diode has low-power consumption, size little and high reliability, is comparatively fast sent out as main light source
Exhibition, the utilization field of light emitting diode extends rapidly in recent years, and the brightness for improving light emitting diode becomes its key factor.
In prior art, using multiple quantum trap（Multiple quantum well, MQW）Structure is used as active layer
Light emitting diode, can obtain higher internal quantum efficiency；And the raising of LED external quantum efficiency to be concentrated mainly on surface thick
Change, metallic mirror technology, graph substrate etc..
However, light emitting diode substantially top is both provided with welding stage electrode, and there is the larger area that is in the light.Traditional skill
In order to reduce the impact of welding stage electrode shading, modal method is utilized in electrode underlying region and arranges a current blocking art
Region, stops the transmittability of electric current immediately below welding stage electrode, thereby improves the current density of non-welding stage electrode zone and increase
The luminous power of active layer, reduces the problem that welding stage electrode is in the light.But the method still cannot avoid welding stage electrode from being in the light, and
As the brightness of light emitting diode is constantly improved, the problem that is in the light of welding stage electrode is more obvious.Therefore, reduce the gear of welding stage electrode
Light area can improve LED external quantum efficiency, and thus this case produces.
The content of the invention
It is an object of the invention to provide a kind of LED production method for going out light with electrode, to reduce electrode gear
Light area, improves the external quantum efficiency of light emitting diode.
To reach above-mentioned purpose, the solution of the present invention is：
A kind of LED production method for going out light with electrode, comprises the following steps：
Step one, forms extension ray structure in epitaxial substrate, delays outside
Layer；
Step 2, makes the electrode fabrication region of layer using mask, ICP etch process, forms some rule in light transmission passage
The light transmission passage for then arranging, and ICP etch depths are to exposing extension ray structure surface；
Step 3, in exposed extension ray structure surface evaporation light transmissive material until filling up light transmission passage, forms printing opacity
Cylinder；
Step 4, erosion removal light transmission passage make layer, leave printing opacity cylinder, and expose extension ray structure；
Step 5, forms the first electrode or second electrode as welding stage electrode on exposed extension ray structure surface,
And thickness exceedes printing opacity height of column；
Step 6, etches the first electrode or second electrode surface as welding stage electrode using ICP until exposing printing opacity post
The upper surface of body；
Step 7, delays outside and back electrode is formed on photo structure, and sliver forms the chip of light emitting diode.
Further, in step one, formed respectively in epitaxial substrate successively cushion, the first type conductive layer, active layer, the
Two type conductive layers, light transmission passage make layer；
In step 2, the electrode fabrication region of layer is made using mask, ICP etch process light transmission passage, some rule are formed
The light transmission passage for then arranging, and ICP etch depths are until expose Second-Type conductive layer surface；
In step 3, in exposed Second-Type conductive layer surface evaporation light transmissive material until filling up light transmission passage, form saturating
Light cylinder；
In step 4, erosion removal light transmission passage makes layer, leaves printing opacity cylinder and exposes Second-Type conductive layer；
In step 5, the second electrode of welding stage electrode is formed in Second-Type conductive layer surface, and thickness exceedes printing opacity cylinder
Highly；
In step 6, the second electrode surface as welding stage electrode is etched using ICP until exposing the upper table of printing opacity cylinder
Face；
In step 7, first electrode is formed in epitaxial substrate, sliver forms the chip of light emitting diode.
Further, in step one, in epitaxial substrate successively respectively formed cushion, peel ply, light transmission passage make layer,
First type conductive layer, active layer, Second-Type conductive layer；
Dielectric layer is formed in Second-Type conductive layer upper surface, surface forms metallic reflector on the dielectric layer；Metal is anti-
Penetrate layer and electrically-conductive backing plate is bonded together；
Erosion removal epitaxial substrate or laser lift-off epitaxial substrate, expose the surface that light transmission passage makes layer；
In step 2, the electrode fabrication region of layer is made using mask, ICP etch process light transmission passage, some rule are formed
The light transmission passage for then arranging, and ICP etch depths are until expose the first type conductive layer surface；
In step 3, in exposed the first type conductive layer surface evaporation light transmissive material until filling up light transmission passage, form saturating
Light cylinder；
In step 4, erosion removal light transmission passage makes layer, leaves printing opacity cylinder and exposes the first type conductive layer；
In step 5, be formed as the first electrode of welding stage electrode in the first exposed type conductive layer surface, and thickness exceedes
Printing opacity height of column；
In step 6, the first electrode surface as welding stage electrode is etched using ICP until exposing the upper table of printing opacity cylinder
Face；
In step 7, second electrode is formed at the back side of electrically-conductive backing plate, sliver forms the chip of light emitting diode.
Further, in step one, cushion, the first type conductive layer, active layer, Second-Type are formed in epitaxial substrate respectively
Conductive layer；Light transmission passage is set on Second-Type conductive layer and makes layer；
In step 2, using mask, ICP etch process, the second electrode for making layer surface in light transmission passage makes region
Some regularly arranged light transmission passages, and ICP etch depths are formed until exposing Second-Type conductive layer surface；
In step 3, in exposed Second-Type conductive layer area evaporation light transmissive material until filling up light transmission passage, form saturating
Light cylinder；
In step 4, erosion removal light transmission passage makes layer, leaves printing opacity cylinder, and exposes Second-Type conductive layer；
In step 5, it is conductive that the Second-Type conductive layer surface in addition to region is made except second electrode arranges current expansion
Layer；The second electrode as welding stage electrode is formed in exposed Second-Type conductive layer surface, and thickness exceedes printing opacity height of column；
The surrounding of welding stage electrode is formed with current expansion conductive layer and is connected；
In step 6, the second electrode surface as welding stage electrode is etched using ICP until exposing the upper table of printing opacity cylinder
Face；
In step 7, regional area current expansion conductive layer, Second-Type conductive layer, active layer are removed, until exposed portion
The first type conductive layer in region, makes first electrode, and the epitaxial layer of first electrode and side on the first exposed conductive layer
Between have conductive isolation layer；Sliver forms the chip of light emitting diode.
Further, the surface configuration of light transmission passage includes rectangle, square, circle, ellipse, trapezoidal, triangular form；Thoroughly
The shape of light cylinder includes rectangle cylinder, square column, circular cylinder, elliptic cylindrical, trapezoid cylinder, triangular form post
Body.
Further, density of the printing opacity cylinder in welding stage electrode fabrication region is less than or equal to 400/mm2。
Further, the surface configuration figure of printing opacity cylinder is smaller in size than 4 microns.
Further, light transmission passage makes epitaxial material system contact with the first type conductive layer and Second-Type conductive layer of layer
The epitaxial material system in face is different.
Further, the thickness that light transmission passage makes layer is 1-10 μm.
A kind of light emitting diode for going out light with electrode, delays outside and first electrode and second electrode is formed on photo structure,
Wherein, first electrode or second electrode are set inside the first electrode or second electrode as welding stage electrode as welding stage electrode
Some regularly arranged fine transparent cylinders are put, and transparent cylinder is formed with extension ray structure and is connected.
Further, extension ray structure is made up of active layer, the first type conductive layer, Second-Type conductive layer；In active layer
Side arranges Second-Type conductive layer, is provided as the second electrode of welding stage electrode on Second-Type conductive layer, active layer it is another
Side arranges the first type conductive layer, arranges epitaxial substrate, first electrode is arranged in epitaxial substrate on the first type conductive layer；Second
Electrode interior arranges some regularly arranged fine transparent cylinders, and transparent cylinder is by the straight-through second electrode table of Second-Type conductive layer
Face, and the upper surface of transparent cylinder is exposed in second electrode surface.
Further, extension ray structure is made up of active layer, the first type conductive layer, Second-Type conductive layer；In active layer
Side arranges the first type conductive layer, is provided as the first electrode of welding stage electrode on the first type conductive layer, active layer it is another
Side arranges Second-Type conductive layer, arranges, on the dielectric layer on Second-Type conductive layer
Metallic reflector is set, and metallic reflector forms Ohmic contact with Second-Type conductive layer by conductive through hole, on metallic reflector
Electrically-conductive backing plate is set, and electrically-conductive backing plate back arranges second electrode；Arrange some regularly arranged fine transparent inside first electrode
Cylinder, transparent cylinder is by the straight-through second electrode surface of the first type conductive layer, and exposes transparent cylinder in second electrode surface
Upper surface.
Further, extension ray structure is made up of active layer, the first type conductive layer, Second-Type conductive layer；In active layer
Side arranges Second-Type conductive layer, arranges current expansion conductive layer and as the second electric of welding stage electrode on Second-Type conductive layer
Pole, the opposite side of active layer arrange the first type conductive layer, on the first type conductive layer arrange epitaxial substrate；Second electrode homonymy
First electrode is made region setting first electrode and is connected with the first type conductive layer；Arrange some regularly arranged inside second electrode
Fine transparent cylinder, fine transparent cylinder lead directly to second electrode surface by extension ray structure, and exposed in second electrode surface
Go out the upper surface of transparent cylinder.
Further, the material of current expansion conductive layer includes tin indium oxide, zinc oxide, Graphene.
Further, the material of transparent cylinder includes tin indium oxide, zinc oxide, Graphene.
Further, transparent cylinder is conductive, transparent cylinder.
After such scheme, the present invention is led to by arranging some regularly arranged printing opacity cylinders in welding stage electrode interior
Cross printing opacity cylinder and adopt light transmissive material.The shading-area of welding stage electrode is efficiently reduced, increases welding stage base part area epitaxy
The extraction yield of ray structure light, the present invention can reduce electrode and be in the light area, effectively improve the external quantum efficiency of light emitting diode.
Meanwhile, printing opacity cylinder adopts conductive material, reduces welding stage electrode caused due to internal setting printing opacity cylinder
The numerical value of light emitting diode series resistance, has reached the series resistance value that printing opacity cylinder is not provided with original welding stage electrode interior,
Reduce this impact of the design to the operating voltage of light emitting diode.
The material adopted by printing opacity cylinder needs the light sent to active layer to have light transmitting property.As printing opacity cylinder is
It is wrapped in inside welding stage electrode, printing opacity cylinder does not just interfere with welding stage electrode in light-emitting diodes using the material with electric conductivity
Series resistance in tubular construction.On the other hand, when welding stage electrode is used to encapsulate used by routing, it is desirable to the material adopted by printing opacity cylinder
Material is with certain pliability.The material of printing opacity cylinder meets requirements above using tin indium oxide, zinc oxide, Graphene.
Density of the printing opacity cylinder in welding stage electrode fabrication region is less than or equal to 400/mm2, the surface configuration of printing opacity cylinder
Figure is smaller in size than 4 microns.The individual number density of printing opacity cylinder, size adopt the number range of the above, can play increase
The resistance to compression of welding stage electrode when will not improve the internal resistance of welding stage electrode while printing opacity cylinder light transmission again, and will not reduce encapsulating
Weldering ability, improves the photoelectric properties of light emitting diode and will not reduce device reliability.
Description of the drawings
Epitaxial structure schematic diagrames of the Fig. 1 for the embodiment of the present invention one；
Manufacturing process schematic diagrames of the Fig. 2 to Fig. 5 for the embodiment of the present invention one；
Chip structure schematic diagrames of the Fig. 6 for the embodiment of the present invention one；
Epitaxial structure schematic diagrames of the Fig. 7 for the embodiment of the present invention two；
Manufacturing process schematic diagrames of the Fig. 8 to Figure 11 for the embodiment of the present invention two；
Chip structure schematic diagrames of the Figure 12 for the embodiment of the present invention two；
Epitaxial structure schematic diagrames of the Figure 13 for the embodiment of the present invention three；
Manufacturing process schematic diagrames of the Figure 14 to Figure 16 for the embodiment of the present invention three；
Chip structure schematic diagrames of the Figure 17 for the embodiment of the present invention three.
Label declaration
11 peel ply 12 of epitaxial substrate
Passage makes 13 first type conductive layer 14 of layer
15 Second-Type conductive layer 16 of active layer
17 metallic reflector 18 of dielectric layer
19 light transmission passage 110 of silicon substrate
111 welding stage electrode 112 of printing opacity cylinder
Back electrode 113
21 cushion 22 of epitaxial substrate
First type conductive layer, 23 active layer 24
25 passage of Second-Type conductive layer makes layer 26
27 printing opacity cylinder 28 of light transmission passage
29 welding stage electrode 210 of current expansion conductive layer
211 separation layer 212 of first electrode
31 cushion 32 of epitaxial substrate
First type conductive layer, 33 active layer 34
35 passage of Second-Type conductive layer makes layer 36
37 printing opacity cylinder 38 of light transmission passage
39 first electrode 310 of welding stage electrode.
Specific embodiment
The present invention is described in detail below in conjunction with drawings and the specific embodiments.
Embodiment one
A kind of LED production method for going out light with electrode that the present invention is disclosed, comprises the following steps that：
One, it is formed epitaxially one after the other peel ply 12, light transmission passage in epitaxial substrate 11 respectively and makes layer 13, the first type conductive layer
14th, active layer 15, Second-Type conductive layer 16, as shown in Figure 1.
Wherein, epitaxial substrate 11 adopts GaAs substrates, and thickness is 300 μm.Peel ply 12 is by (Al0.7Ga0.3)0.5In0.5P tri-
Five compounds of group are constituted, and thickness is 200nm.Light transmission passage makes the constituent material of layer 13 and adopts Al0.4Ga0.6As III-Vs
Compound, adopts thickness for 3 μm.First type conductive layer 14 is by the first type roughened layer, the first type current extending, the first type limiting layer
Composition.Wherein the first type roughened layer is by (Al0.7Ga0.3)0.5In0.5P III-Vs compound is constituted, and thickness is 1 μm.First type electricity
Stream extension layer is by (Al0.35Ga0.65)0.5In0.5P III-Vs compound is constituted, and thickness is 4 μm.First type limiting layer by
(Al0.8Ga0.2)0.5In0.5P III-Vs compound is constituted, and thickness is 800nm.Active layer 15 is by 20 groups of (Al0.8Ga0.2)0.5In0.5P/Ga0.5In0.5P III-Vs compound is alternately constituted.Second-Type conductive layer 16 is by Second-Type limiting layer, Second-Type electric current
Extension layer is constituted.Second-Type limiting layer is by (Al0.8Ga0.2)0.5In0.5P III-Vs compound is constituted, and thickness is 800nm.Second
Type current extending is made up of GaP III-V compounds, and thickness is 4 μm.
Two, dielectric layer 17 is formed in 16 upper surface of Second-Type conductive layer, form metallic reflector in 17 upper surface of dielectric layer
18。
Three, metallic reflector 18 and conductive silicon substrate 19 are bonded together, as shown in Figure 2.
Four, erosion removal epitaxial substrate 11, peel ply 12, exposes the surface that light transmission passage makes layer 13 respectively.
Five, using techniques such as mask, ICP etchings, the electrode fabrication region for making 13 surface of layer in light transmission passage forms 350
Individual/mm2The light transmission passage 110 of rule, and ICP etch depths are up to 14 surface of the first type conductive layer is exposed, as shown in Figure 3.
Six, the evaporation tin indium oxide light transmissive material on 14 surface of the first type conductive layer is until fill up light transmission passage 110, formation is justified
The printing opacity cylinder 111 of cylindricality, and a diameter of 3 μm of cylinder.
Seven, erosion removal light transmission passage makes layer 13, leaves printing opacity cylinder 111 and exposes the first type conductive layer 14, such as Fig. 4
It is shown.
Eight, welding stage electrode 112 is formed on 14 surface of the first type conductive layer, and thickness exceedes 111 height of printing opacity cylinder, such as schemes
Shown in 5.
Nine, 112 surface of welding stage electrode is etched using ICP until exposing the upper surface of printing opacity cylinder 111.
Ten, back electrode 113 is formed at the back side of silicon substrate 19, sliver forms the chip of light emitting diode, as shown in Figure 6.
Embodiment two
A kind of LED production method for going out light with electrode that the present invention is disclosed, comprises the following steps that：
One, it is formed epitaxially one after the other cushion 22, the first type conductive layer 23, active layer 24, second in epitaxial substrate 21 respectively
Type conductive layer 25, as shown in Figure 7.
Wherein, epitaxial substrate 21 adopts Sapphire Substrate, and thickness is 300 μm.Cushion 22 adopts undoped GaN tri- or five
Compounds of group, thickness are 2 μm.GaN III-V compound of the first type conductive layer 23 using Si doping, thickness is 2.5 μm.It is active
Layer 24 adopts 5 pairs of SQWs and quantum to build the structure for intersecting growth.Specially quantum is built and is made up of AlGaN III-V compounds,
Thickness is 12nm.SQW is made up of GaInN III-V compounds, and thickness is 4nm.Second-Type conductive layer 25 is using Mg doping
GaN III-V compounds, thickness is 200nm.
Two, light transmission passage is deposited with Second-Type conductive layer 25 and makes layer 26, light transmission passage makes layer 26 and adopts SiO2Material
Material, and thickness is 2 μm.
Three, using techniques such as mask, ICP etchings, the electrode fabrication region for making 26 surface of layer in light transmission passage forms 300
Individual/mm2The light transmission passage 27 of rule, and ICP etch depths are up to 25 surface of Second-Type conductive layer is exposed, as shown in Figure 8.
Four, in exposed 25 surface of Second-Type conductive layer evaporation zinc oxide light transmissive material until filling up light transmission passage 27, shape
Into foursquare printing opacity cylinder 28, and the foursquare length of side is 2 μm.
Five, erosion removal light transmission passage makes layer 26, leaves printing opacity cylinder 28 and exposes Second-Type conductive layer 25, such as Fig. 9
It is shown.
Six, current expansion conductive layer 29 is made on 25 surface of Second-Type conductive layer, current expansion conductive layer 29 adopts ITO materials
Material；And the current expansion conductive layer 29 of removal welding stage electrode zone, as shown in Figure 10.
Seven, welding stage electrode 210 is formed on exposed 25 surface of Second-Type conductive layer, and thickness is high more than printing opacity cylinder 28
Degree, as shown in figure 11.
Eight, 210 surface of welding stage electrode is etched using ICP until exposing the upper surface of printing opacity cylinder 28.
Nine, regional area current expansion conductive layer 29, Second-Type conductive layer 25, active layer 24 are removed, until exposed portion
First type conductive layer, 23 region, makes first electrode 211, and first electrode 211 and outer delayed action on the first exposed conductive layer
Photo structure（Epitaxial layer）Side between have SiO2Separation layer 212.
Ten, sliver forms the chip of light emitting diode, as shown in figure 12.
Embodiment three
A kind of LED production method for going out light with electrode that the present invention is disclosed, comprises the following steps that：
One, it is formed epitaxially one after the other cushion 32, the first type conductive layer 33, active layer 34, second in epitaxial substrate 31 respectively
Type conductive layer 35, light transmission passage makes layer 36, as shown in figure 13.
Wherein, epitaxial substrate 31 adopts GaAs substrates, and thickness is 300 μm.First type conductive layer 33 by Bragg reflecting layer,
First type limiting layer is constituted.Wherein Bragg reflecting layer is by 30 groups of Al0.5Ga0.5As/AlAs III-Vs compound is alternately constituted.The
One type limiting layer is by (Al0.7Ga0.3)0.5In0.5P III-Vs compound is constituted, and thickness is 750nm.Active layer 34 is by 26 groups
(Al0.7Ga0.3)0.5In0.5P/Ga0.5In0.5P III-Vs compound is alternately constituted.Second-Type conductive layer 35 by Second-Type limiting layer,
Second-Type current extending is constituted.Second-Type limiting layer is by (Al0.7Ga0.3)0.5In0.5P III-Vs compound is constituted, and thickness is
750nm.Second-Type current extending is made up of GaP III-V compounds, and thickness is 7 μm.Light transmission passage makes the structure of layer 36
Al is adopted into material0.4Ga0.6As III-V compounds, adopt thickness for 5 μm.
Two, using techniques such as mask, ICP etchings, the electrode fabrication region for making 36 surface of layer in light transmission passage forms 200
Individual/mm2The light transmission passage 37 of rule, and ICP etch depths are up to 35 surface of Second-Type conductive layer is exposed, as shown in figure 14.
Three, in exposed 35 surface of Second-Type conductive layer evaporation tin indium oxide light transmissive material until filling up light transmission passage 37,
The printing opacity cylinder 38 of equilateral triangle is formed, and the length of side of equilateral triangle is 3 μm.
Four, erosion removal light transmission passage makes layer 36, leaves printing opacity cylinder 38 and exposes Second-Type conductive layer 35, such as Figure 15
It is shown.
Five, welding stage electrode 39 is formed on exposed 35 surface of Second-Type conductive layer, and thickness exceedes 38 height of printing opacity cylinder,
As shown in figure 16.
Six, 39 surface of welding stage electrode is etched using ICP until exposing the upper surface of printing opacity cylinder 38.
Seven, first electrode 310 is made at substrate back, sliver forms the chip of light emitting diode, as shown in figure 17.
Presently preferred embodiments of the present invention is the foregoing is only, not the restriction to this case design, all designs according to this case are closed
The equivalent variations done by key, each fall within the protection domain of this case.
Claims (11)
1. a kind of LED production method for going out light with electrode, it is characterised in that：Comprise the following steps：
Step one, forms extension ray structure in epitaxial substrate, delays outside；
Step 2, makes the electrode fabrication region of layer using mask, ICP etch process in light transmission passage, forms some rule rows
The light transmission passage of row, and ICP etch depths are to exposing extension ray structure surface；
Step 3, in exposed extension ray structure surface evaporation light transmissive material until filling up light transmission passage, forms printing opacity cylinder；
Step 4, erosion removal light transmission passage make layer, leave printing opacity cylinder, and expose extension ray structure；
Step 5, forms the first electrode or second electrode as welding stage electrode on exposed extension ray structure surface, and thick
Degree is more than printing opacity height of column；
Step 6, etches the first electrode or second electrode surface as welding stage electrode using ICP until exposing printing opacity cylinder
Upper surface；
Step 7, delays outside and back electrode is formed on photo structure, and sliver forms the chip of light emitting diode.
2. a kind of LED production method for going out light with electrode as claimed in claim 1, it is characterised in that：Step one
In, form cushion, the first type conductive layer, active layer, Second-Type conductive layer, light transmission passage system in epitaxial substrate successively respectively
Make layer；
In step 2, the electrode fabrication region of layer is made using mask, ICP etch process light transmission passage, form some rule rows
The light transmission passage of row, and ICP etch depths are until expose Second-Type conductive layer surface；
In step 3, in exposed Second-Type conductive layer surface evaporation light transmissive material until filling up light transmission passage, printing opacity post is formed
Body；
In step 4, erosion removal light transmission passage makes layer, leaves printing opacity cylinder and exposes Second-Type conductive layer；
In step 5, the second electrode of welding stage electrode is formed in Second-Type conductive layer surface, and thickness exceedes printing opacity height of column；
In step 6, the second electrode surface as welding stage electrode is etched using ICP until exposing the upper surface of printing opacity cylinder；
In step 7, first electrode is formed in epitaxial substrate, sliver forms the chip of light emitting diode.
3. a kind of LED production method for going out light with electrode as claimed in claim 1, it is characterised in that：Step one
In, in epitaxial substrate successively respectively formed cushion, peel ply, light transmission passage make layer, the first type conductive layer, active layer,
Second-Type conductive layer；
Dielectric layer is formed in Second-Type conductive layer upper surface, surface forms metallic reflector on the dielectric layer；By metallic reflector
It is bonded together with electrically-conductive backing plate；
Erosion removal epitaxial substrate or laser lift-off epitaxial substrate, expose the surface that light transmission passage makes layer；
In step 2, the electrode fabrication region of layer is made using mask, ICP etch process light transmission passage, form some rule rows
The light transmission passage of row, and ICP etch depths are until expose the first type conductive layer surface；
In step 3, in exposed the first type conductive layer surface evaporation light transmissive material until filling up light transmission passage, printing opacity post is formed
Body；
In step 4, erosion removal light transmission passage makes layer, leaves printing opacity cylinder and exposes the first type conductive layer；
In step 5, be formed as the first electrode of welding stage electrode in the first exposed type conductive layer surface, and thickness exceedes printing opacity
Height of column；
In step 6, the first electrode surface as welding stage electrode is etched using ICP until exposing the upper surface of printing opacity cylinder；
In step 7, second electrode is formed at the back side of electrically-conductive backing plate, sliver forms the chip of light emitting diode.
4. a kind of LED production method for going out light with electrode as claimed in claim 1, it is characterised in that：Step one
In, form cushion, the first type conductive layer, active layer, Second-Type conductive layer in epitaxial substrate respectively；In Second-Type conductive layer
Upper setting light transmission passage makes layer；
In step 2, using mask, ICP etch process, the second electrode for making layer surface in light transmission passage makes region and is formed
Some regularly arranged light transmission passages, and ICP etch depths are until expose Second-Type conductive layer surface；
In step 3, in exposed Second-Type conductive layer area evaporation light transmissive material until filling up light transmission passage, printing opacity post is formed
Body；
In step 4, erosion removal light transmission passage makes layer, leaves printing opacity cylinder, and exposes Second-Type conductive layer；
In step 5, the Second-Type conductive layer surface in addition to region is made except second electrode arranges current expansion conductive layer；
Exposed Second-Type conductive layer surface forms the second electrode as welding stage electrode, and thickness exceedes printing opacity height of column；Welding stage
The surrounding of electrode is formed with current expansion conductive layer and is connected；
In step 6, the second electrode surface as welding stage electrode is etched using ICP until exposing the upper surface of printing opacity cylinder；
In step 7, regional area current expansion conductive layer, Second-Type conductive layer, active layer are removed, until exposed portion region
The first type conductive layer, make between first electrode, and first electrode and the epitaxial layer of side on the first exposed conductive layer
There is conductive isolation layer；Sliver forms the chip of light emitting diode.
5. a kind of LED production method for going out light with electrode as claimed in claim 1, it is characterised in that：Printing opacity leads to
The surface configuration in road includes rectangle, square, circle, ellipse, trapezoidal, triangle；The shape of printing opacity cylinder includes rectangular
Shape cylinder, square column, circular cylinder, elliptic cylindrical, trapezoid cylinder, triangle cylinder.
6. a kind of LED production method for going out light with electrode as claimed in claim 1, it is characterised in that：Printing opacity post
Density of the body in welding stage electrode fabrication region is less than or equal to 400/mm2。
7. a kind of LED production method for going out light with electrode as claimed in claim 1, it is characterised in that：Printing opacity post
The surface configuration figure of body is smaller in size than 4 microns.
8. a kind of LED production method for going out light with electrode as claimed in claim 1, it is characterised in that：Printing opacity leads to
The epitaxial material system that road makes layer is different from the epitaxial material system of the first type conductive layer or the contact surface of Second-Type conductive layer.
9. a kind of LED production method for going out light with electrode as claimed in claim 1, it is characterised in that：Printing opacity leads to
It is 1-10 μm that road makes the thickness of layer.
10. a kind of LED production method for going out light with electrode as claimed in claim 1, it is characterised in that：It is transparent
Cylinder is conductive, transparent cylinder.
A kind of 11. LED production methods for going out light with electrode as claimed in claim 10, it is characterised in that：It is transparent
The material of cylinder includes tin indium oxide, zinc oxide, Graphene.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1815768A (en) * | 2005-01-31 | 2006-08-09 | 株式会社电装 | Self-luminous display device |
| CN101908593A (en) * | 2010-07-15 | 2010-12-08 | 山东华光光电子有限公司 | Making method of GaN (Gallium Nitride)-based LED imaging transparent conductive film |
| CN102194954A (en) * | 2010-03-10 | 2011-09-21 | 株式会社东芝 | Semiconductor light-emitting device, lighting instrument employing the same and process for production of the semiconductor light-emitting device |
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| KR101341374B1 (en) * | 2007-07-30 | 2013-12-16 | 삼성전자주식회사 | Photonic crystal light emitting device and manufacturing method of the same |
| JP5204177B2 (en) * | 2010-09-06 | 2013-06-05 | 株式会社東芝 | Semiconductor light emitting device and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1815768A (en) * | 2005-01-31 | 2006-08-09 | 株式会社电装 | Self-luminous display device |
| CN102194954A (en) * | 2010-03-10 | 2011-09-21 | 株式会社东芝 | Semiconductor light-emitting device, lighting instrument employing the same and process for production of the semiconductor light-emitting device |
| CN101908593A (en) * | 2010-07-15 | 2010-12-08 | 山东华光光电子有限公司 | Making method of GaN (Gallium Nitride)-based LED imaging transparent conductive film |
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