CN104377272A - Method for manufacturing solar cell grid line - Google Patents
Method for manufacturing solar cell grid line Download PDFInfo
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- CN104377272A CN104377272A CN201410588784.4A CN201410588784A CN104377272A CN 104377272 A CN104377272 A CN 104377272A CN 201410588784 A CN201410588784 A CN 201410588784A CN 104377272 A CN104377272 A CN 104377272A
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- slurry
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- grid line
- organic carrier
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- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000002002 slurry Substances 0.000 claims abstract description 58
- 239000011521 glass Substances 0.000 claims abstract description 17
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000003756 stirring Methods 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000001856 Ethyl cellulose Substances 0.000 claims abstract description 7
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229920001249 ethyl cellulose Polymers 0.000 claims abstract description 7
- 235000019325 ethyl cellulose Nutrition 0.000 claims abstract description 7
- 239000002245 particle Substances 0.000 claims abstract description 7
- 239000000654 additive Substances 0.000 claims abstract description 4
- 230000000996 additive effect Effects 0.000 claims abstract description 4
- 239000000853 adhesive Substances 0.000 claims abstract description 4
- 230000001070 adhesive effect Effects 0.000 claims abstract description 4
- 239000000428 dust Substances 0.000 claims description 12
- RBNWAMSGVWEHFP-UHFFFAOYSA-N trans-p-Menthane-1,8-diol Chemical compound CC(C)(O)C1CCC(C)(O)CC1 RBNWAMSGVWEHFP-UHFFFAOYSA-N 0.000 claims description 6
- MMIQVXSUSBBYGY-UHFFFAOYSA-N [Sb].[Si].[Bi] Chemical group [Sb].[Si].[Bi] MMIQVXSUSBBYGY-UHFFFAOYSA-N 0.000 claims description 3
- 230000005021 gait Effects 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 20
- 229910052710 silicon Inorganic materials 0.000 abstract description 20
- 239000010703 silicon Substances 0.000 abstract description 20
- 239000000758 substrate Substances 0.000 abstract description 2
- 239000000843 powder Substances 0.000 abstract 3
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052797 bismuth Inorganic materials 0.000 abstract 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000007921 spray Substances 0.000 description 21
- 238000005245 sintering Methods 0.000 description 7
- 238000005507 spraying Methods 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 238000007650 screen-printing Methods 0.000 description 6
- 238000001035 drying Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Dispersion Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a method for manufacturing a solar cell grid line. The grid line of a front electrode of a cell comprises a first slurry layer and a second slurry layer located on the upper surface of the first slurry layer. First slurry comprises an organic carrier, silver powder, glass powder and an ohm contact additive. Second slurry comprises an organic carrier, silver powder, glass powder and a metal adhesive. The organic carrier in the second slurry is formed by heating terpilenol, butyl carbitol, ethyl cellulose and the balance in the proportion of 53:28:14:5 to 60 DEG C, stirring for at least two hours and mixing the components. The particle size of the silver powder is 6 micrometers, and the glass powder is made of bismuth, silicon and antimony. The front electrode of the solar cell with a high height-width ratio can be manufactured through the manufacturing method, the problem of positioning precision is solved, burning ability of an anti-reflection layer is improved, and adhesion force of the electrode to a cell substrate is improved.
Description
Technical field
The present invention relates to a kind of manufacture method of solar battery sheet grid line, belong to solar cell preparing technical field.
Background technology
Solar cell is the semiconductor device with " photovoltaic effect ", and the PN junction of this device is produced voltage by after illumination, and namely luminous energy produces the process of electric energy, so, according to above-mentioned principle, it is crucial that must there be connected loop that electric energy is formed electric current, could use.Therefore electrode extracted current is prepared on the surface of solar cell, just extremely important.At present, the scheme of industrialization makes electrode at the two-face printing slurry of solar cell respectively, and wherein a kind of is aluminium for rear surface of solar cell or aluminium/silver electrode; Another kind is the silver electrode for solar cell sensitive surface (front), and compared to the performance of solar cell, the requirement of its front electrode is very high, because it directly can affect the conversion efficiency (key performance) of solar cell.In general, front electrode grid line must possess following condition: have low contact resistance and volume resistance, and the depth-width ratio of electrode wants large, reduces the impact absorbed sunlight.The main method preparing front electrode grid line is at present silk-screen printing technique.Silk-screen printing technique is applied to the manufacture of solar-energy photo-voltaic cell as mature process a kind of morning, but, silk-screen printing technique is adopted to also have a defect, be difficult to exactly obtain the very large gate electrode line of depth-width ratio, in general, the depth-width ratio of the gate electrode line that silk-screen printing technique makes is less than 0.3, and this is all because the restriction of the factor such as viscosity, squeegee pressure, screen thickness of slurry.Meanwhile, current silk screen printing mainly adopts one-step print technology, and thus adopted slurry also will meet the requirement to electrode shape and conductive capability while should meeting the requirement of electrode pair contact interface.Thus current slurry can only seek balance between the two.
Summary of the invention
The invention provides a kind of manufacture method of solar battery sheet grid line, this manufacture method can be prepared the front electrode of solar battery of depth-width ratio and solve positioning precision problem; Secondly, the requirement to electrode shape and conductive capability can be met, the pressure be applied on silicon chip in the course of processing can be avoided to cause die crack.
For achieving the above object, the technical solution used in the present invention is: a kind of preparation technology of front electrode of solar battery grid line, is characterized in that: described battery front side electrode grid line is made up of the first pulp layer, the second pulp layer of being positioned at this first pulp layer upper surface;
First slurry, the second slurry are respectively charged into the container be connected with lower nozzle, top nozzle, and described lower nozzle and top nozzle are parallel closely to be arranged and top nozzle is positioned at lower nozzle upper side, and lower nozzle and top nozzle gait of march are 125mm/s; Battery front side electrode grid line bake out temperature 140 ~ 160 DEG C;
Described first slurry is made up of the component of following weight ratio:
Organic carrier 23 parts,
70 parts, silver powder,
5 parts, glass dust,
Ohmic contact additive 2 parts,
In described first slurry, organic carrier is heated to 60 DEG C by terpinol, butyl carbitol, ethyl cellulose, surplus according to 55:30:10:5 weight ratio, stirs and is mixed to form at least 2 hours;
Described second slurry is made up of the component of following weight ratio:
Organic carrier 10 parts,
85 parts, silver powder,
1 part, glass dust,
Metal adhesive 4 parts,
In described second slurry, organic carrier is heated to 60 DEG C by terpinol, butyl carbitol, ethyl cellulose, surplus according to 53:28:14:5 weight ratio, stirs and is mixed to form at least 2 hours;
The particle diameter of described silver powder is 6 μm μm, and described glass dust is bismuth-silicon-antimony.
The technical scheme improved further in technique scheme is as follows:
1, in such scheme, described glass dust softening point should be 350 ~ 550 DEG C, and meanwhile, its particle diameter is 0.05 ~ 2 μm.
2, in such scheme, described lower nozzle lowest part is from solar cell 0.1mm ~ 5mm.
3, in such scheme, described first slurry grinds after 30 minutes and obtains after stirring on three-roll grinder.
4, in such scheme, grind on three-roll grinder after 30 minutes after the configuration stirring of described second slurry and obtain.
Because technique scheme is used, the present invention compared with prior art has following advantages and effect:
1, the first slurry that the present invention adopts special formulation and technique mainly meets the requirement to contact interface, the requirement adopting the second slurry of special formulation and technique to be superimposed upon the first pulp layer upper surface to be mainly used to meet electrode shape and conductive capability; Secondly, first slurry (A), the second slurry (B) are respectively charged into the container be connected with lower nozzle, top nozzle, described lower nozzle and top nozzle are parallel closely to be arranged and lower nozzle is positioned at top nozzle upper side, once spray two kinds of slurries, described lower nozzle spray pressure is 0.5MPa, described top nozzle spray pressure is 0.65MPa, thus solves the positioning precision between the first pulp layer and the second pulp layer.
2, the present invention adopts specific component formula and the first pulp layer thereof and the second pulp layer matched combined, and work the inorganic carrier grilling thoroughly anti-reflection layer and cementation when organic carrier and sintering, micro silver powder is as electric conductor.The metal oxide composition of specific inorganic carrier and organic carrier combination low-melting glass micro mist and a sintering aids role, improve the ability of grilling thoroughly of anti-reflection layer and the adhesion of electrode pair cell substrate, inorganic carrier also plays a part very crucial to the reduction of contact resistance.
3, the present invention adopts the spray nozzle device of two shower nozzles, once sprays two kinds of slurries, continuous spray front electrode grid line on silicon chip, and the first slurry of lower nozzle spraying, in order to strengthen the ohmic contact of front electrode grid line and silicon chip, reduces contact resistance; Second slurry of lower nozzle spraying, in order to strengthen the conductance of front electrode grid line, reduces the volume resistance of gate electrode line.First slurry and the second slurry form the front electrode metal grid lines of unification after drying sintering.The front electrode metal grid lines of final formation not only has good contacting with silicon chip, and electrode metal grid line itself also has good electric conductivity, and the depth-width ratio of obtainable metal grid lines is greater than 0.3.
Accompanying drawing explanation
Accompanying drawing 1 is the schematic diagram of manufacture method shower nozzle of the present invention when fixing;
Accompanying drawing 2 is the schematic diagram of manufacture method cell piece of the present invention when fixing;
Accompanying drawing 3 is the structural representation of battery front side of the present invention.
In above accompanying drawing: 1, the first pulp layer; 2, the second pulp layer; 3, top nozzle; 4, lower nozzle; 5, battery.
Embodiment
Below in conjunction with embodiment, the invention will be further described:
Embodiment 1-5: a kind of manufacture method of solar battery sheet grid line, described battery front side electrode grid line is made up of the first pulp layer 1, the second pulp layer 2 of being positioned at this first pulp layer 1 upper surface;
First slurry, the second slurry are respectively charged into the container be connected with lower nozzle 4, top nozzle 3, and described lower nozzle 4 and top nozzle 3 are parallel closely to be arranged and top nozzle 3 is positioned at lower nozzle 4 upper side, and lower nozzle 4 and top nozzle 3 gait of march are 125mm/s; Battery front side electrode grid line bake out temperature 140 ~ 160 DEG C;
Described first slurry is made up of the component of following weight ratio:
Organic carrier 23 parts,
70 parts, silver powder,
5 parts, glass dust,
Ohmic contact additive 2 parts,
In described first slurry, organic carrier is heated to 60 DEG C by terpinol, butyl carbitol, ethyl cellulose, surplus according to 55:30:10:5 weight ratio, stirs and is mixed to form at least 2 hours;
Described second slurry is made up of the component of following weight ratio:
Organic carrier 10 parts,
85 parts, silver powder,
1 part, glass dust,
Metal adhesive 4 parts,
In described second slurry, organic carrier is heated to 60 DEG C by terpinol, butyl carbitol, ethyl cellulose, surplus according to 53:28:14:5 weight ratio, stirs and is mixed to form at least 2 hours;
The particle diameter of described silver powder is 6 μm μm, and described glass dust is bismuth-silicon-antimony.
Above-mentioned glass dust softening point should be 350 ~ 550 DEG C, and meanwhile, its particle diameter is 0.05 ~ 2 μm.
Above-mentioned lower nozzle 4 lowest part is from solar cell 0.1mm ~ 5mm.
Above-mentioned first slurry grinds after 30 minutes and obtains after stirring on three-roll grinder; Grind on three-roll grinder after 30 minutes after the configuration stirring of above-mentioned second slurry and obtain.
Described battery front side electrode grid line width, described first pulp layer A and the second pulp layer B size as shown in table 1:
Table 1
Above-described embodiment is further described below.
Shower nozzle is placed in the top of silicon chip battery, the lowest part of its lower nozzle 4 is from silicon chip 0.1mm ~ 5mm.First slurry A is loaded the container be connected with lower nozzle 4, circuit gas circuit A controls spray time and the spray pressure of lower nozzle 4.Slurry B is loaded the container be connected with top nozzle 3, circuit gas circuit B controls spray time and the spray pressure of top nozzle 3.By the control respectively of circuit gas circuit A and B, uniformly spray on silicon chip, fixed the first slurry A and the second slurry B by silicon chip, shower nozzle rectilinear movement or shower nozzle are fixed, and silicon wafer linear moves (as Figure of description 2).Final first slurry A and the second slurry B forms straight gate electrode line on silicon chip.
Above-mentioned obtained gate electrode line is dried in drying oven, bake out temperature 120 DEG C or 140 DEG C or 160 DEG C or 180 DEG C, drying time 10 minutes to 30 minutes.By silicon slice rotating 90 degree, use another one shower nozzle spraying bus electrode grid line or silk screen printing bus electrode grid line, repeat above-mentioned stoving process, put into sintering furnace sintering and form front electrode of solar battery grid line (as Figure of description 3).
Use solar cell test device (NCT-M) to test series resistance (Rs:m Ω cm2), adopt width and the height of the magnifying glass test electrode grid line of 100 times.
The debugging of Nozzle Parameter
First slurry A and the second slurry B are respectively charged into the container be connected with lower nozzle 4, top nozzle 3, regulate the position of shower nozzle.Utilize circuit gas circuit A to regulate lower nozzle 4 spray pressure to 0.5MPa, spray time 1 second, shower nozzle translational speed is 125mm/ second, separately spraying slurry A on the monocrystalline silicon piece of 125mm, and silicon chip sprays out the gate electrode line of slurry A.The gate electrode line width utilizing the microscope of 100 times to test this slurry is 40 ~ 80 μm, utilizes the wet-film thickness of step instrument testing size A to be 8 ~ 10 μm.Utilize circuit gas circuit B to regulate top nozzle spray pressure to 0.65MPa, spray time 1 second, shower nozzle translational speed is 125mm/ second, and spraying slurry B on the monocrystalline silicon piece of 125mm, silicon chip sprays out the gate electrode line of slurry B separately.The gate electrode line width utilizing the microscope of 100 times to test this slurry is 40 ~ 80 μm, utilizes the wet-film thickness of step instrument testing size to be 40 ~ 60 μm.
The making of gate electrode line
The pressure of lower nozzle 4 is adjusted to 0.5MPa by regulating circuit gas circuit A, spray time 1 second; The pressure of top nozzle is adjusted to 0.65MPa by regulating circuit gas circuit B, spray time 1 second; Setting shower nozzle translational speed is 125mm/ second, and fixing silicon chip, it is 40 ~ 80 μm that silicon chip sprays out width, is highly the gate electrode line wet film of 45 ~ 65 μm.Silicon chip is moved 2mm along the direction perpendicular to grid line, repeats above-mentioned spraying process, until the gate electrode line on whole silicon chip all sprays complete.The silicon chip having sprayed gate electrode line is put in drying oven and dries, bake out temperature 150 DEG C, drying time 15 minutes.By silicon slice rotating 90 degree, use another one shower nozzle spraying bus electrode grid line, repeat above-mentioned stoving process, put into sintering furnace sintering and form front electrode of solar battery grid line.
Above-described embodiment, only for technical conceive of the present invention and feature are described, its object is to person skilled in the art can be understood content of the present invention and implement according to this, can not limit the scope of the invention with this.All equivalences done according to Spirit Essence of the present invention change or modify, and all should be encompassed within protection scope of the present invention.
Claims (5)
1. a manufacture method for solar battery sheet grid line, is characterized in that: described battery front side electrode grid line is made up of the first pulp layer, the second pulp layer of being positioned at this first pulp layer upper surface;
First slurry, the second slurry are respectively charged into the container be connected with lower nozzle, top nozzle, and described lower nozzle and top nozzle are parallel closely to be arranged and top nozzle is positioned at lower nozzle upper side, and lower nozzle and top nozzle gait of march are 125mm/s; Battery front side electrode grid line bake out temperature 140 ~ 160 DEG C;
Described first slurry is made up of the component of following weight ratio:
Organic carrier 23 parts,
70 parts, silver powder,
5 parts, glass dust,
Ohmic contact additive 2 parts,
In described first slurry, organic carrier is heated to 60 DEG C by terpinol, butyl carbitol, ethyl cellulose, surplus according to 55:30:10:5 weight ratio, stirs and is mixed to form at least 2 hours;
Described second slurry is made up of the component of following weight ratio:
Organic carrier 10 parts,
85 parts, silver powder,
1 part, glass dust,
Metal adhesive 4 parts,
In described second slurry, organic carrier is heated to 60 DEG C by terpinol, butyl carbitol, ethyl cellulose, surplus according to 53:28:14:5 weight ratio, stirs and is mixed to form at least 2 hours;
The particle diameter of described silver powder is 6 μm μm, and described glass dust is bismuth-silicon-antimony.
2. manufacture method according to claim 1, is characterized in that: described glass dust softening point should be 350 ~ 550 DEG C, and meanwhile, its particle diameter is 0.05 ~ 2 μm.
3. manufacture method according to claim 1, is characterized in that: described lower nozzle lowest part is from solar cell 0.1mm ~ 5mm.
4. manufacture method according to claim 1, is characterized in that: described first slurry grinds after 30 minutes and obtains after stirring on three-roll grinder.
5. manufacture method according to claim 1, is characterized in that: grind on three-roll grinder after 30 minutes after the configuration stirring of described second slurry and obtain.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410588784.4A CN104377272B (en) | 2012-06-11 | 2012-06-11 | Method for manufacturing solar cell grid line |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210190153.8A CN102709394B (en) | 2012-06-11 | 2012-06-11 | Process for preparing cathode grid line of solar cell |
| CN201410588784.4A CN104377272B (en) | 2012-06-11 | 2012-06-11 | Method for manufacturing solar cell grid line |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210190153.8A Division CN102709394B (en) | 2012-06-11 | 2012-06-11 | Process for preparing cathode grid line of solar cell |
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| Publication Number | Publication Date |
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| CN104377272A true CN104377272A (en) | 2015-02-25 |
| CN104377272B CN104377272B (en) | 2017-03-22 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410588784.4A Active CN104377272B (en) | 2012-06-11 | 2012-06-11 | Method for manufacturing solar cell grid line |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114867206A (en) * | 2022-04-29 | 2022-08-05 | 北京梦之墨科技有限公司 | Electronic structure and manufacturing method thereof |
| CN115881573A (en) * | 2023-01-20 | 2023-03-31 | 通威太阳能（成都）有限公司 | Method for detecting surface circuit morphology of solar cell |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050221613A1 (en) * | 2004-04-06 | 2005-10-06 | Sharp Kabushiki Kaisha | Electrode formation method, electrode and solar battery |
| CN102152676A (en) * | 2010-11-29 | 2011-08-17 | 奥特斯维能源（太仓）有限公司 | Saving type ink jet printing process for solar cell grid lines |
| CN102332494A (en) * | 2011-09-26 | 2012-01-25 | 润峰电力有限公司 | Method for printing metal gate line |
-
2012
- 2012-06-11 CN CN201410588784.4A patent/CN104377272B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050221613A1 (en) * | 2004-04-06 | 2005-10-06 | Sharp Kabushiki Kaisha | Electrode formation method, electrode and solar battery |
| CN102152676A (en) * | 2010-11-29 | 2011-08-17 | 奥特斯维能源（太仓）有限公司 | Saving type ink jet printing process for solar cell grid lines |
| CN102332494A (en) * | 2011-09-26 | 2012-01-25 | 润峰电力有限公司 | Method for printing metal gate line |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114867206A (en) * | 2022-04-29 | 2022-08-05 | 北京梦之墨科技有限公司 | Electronic structure and manufacturing method thereof |
| CN115881573A (en) * | 2023-01-20 | 2023-03-31 | 通威太阳能（成都）有限公司 | Method for detecting surface circuit morphology of solar cell |
| CN115881573B (en) * | 2023-01-20 | 2024-07-05 | 通威太阳能（成都）有限公司 | Method for detecting surface circuit morphology of solar cell |
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| Publication number | Publication date |
|---|---|
| CN104377272B (en) | 2017-03-22 |
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