CN104377209A - Thin film transistor array substrate and liquid crystal display device - Google Patents

Thin film transistor array substrate and liquid crystal display device Download PDF

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Publication number
CN104377209A
CN104377209A CN201410682843.4A CN201410682843A CN104377209A CN 104377209 A CN104377209 A CN 104377209A CN 201410682843 A CN201410682843 A CN 201410682843A CN 104377209 A CN104377209 A CN 104377209A
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slotted line
photoresistance
width
line
slotted
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CN104377209B (en
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马佳星
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to PCT/CN2014/092913 priority patent/WO2016082236A1/en
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Mathematical Physics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

The invention provides a thin film transistor array substrate and a liquid crystal display device. The thin film transistor array substrate comprises a display area and a frame area arranged around the display area, a plurality of thin film transistors distributed in an array mode and a plurality of data lines are arranged in the display area, a first testing pattern, a second testing pattern and a third testing pattern are formed in the frame area, the distance between every two adjacent testing patterns is greater than the distance between every two adjacent data lines, each testing pattern comprises a light resistor and two testing lines, the light resistor and the two testing lines of each testing pattern correspond to a light resistor and data lines, of the corresponding color, in the display area in size and position, and the overlapping area between the two adjacent light resistors of the corresponding color in the display area can be obtained by measuring the width of the part, exceeding the corresponding testing lines, of the light resistor in the each testing pattern. According to the thin film transistor array substrate and the liquid crystal display device, the overlapping area between the two adjacent light resistors of the corresponding color in the display area can be obtained by measurement.

Description

Thin-film transistor array base-plate and liquid crystal indicator
Technical field
The present invention relates to display field, particularly relate to a kind of thin-film transistor array base-plate and liquid crystal indicator.
Background technology
COA (Color on Array) technology chromatic photoresist is prepared in a kind of technology on thin-film transistor array base-plate array (thin film transistor (TFT) Array).It has the advantage that can improve pixel aperture ratio and liquid crystal indicator (liquid crystal display, LCD) quality.Secondly, liquid crystal indicator prepared by application COA technology because there is not the problem of colorized optical filtering (color filter, CF) substrate and TFT substrate contraposition, thus reduces the difficulty in one-tenth box (cell) stage of liquid crystal indicator.But in COA technology, have overlapping region between two kinds of photoresistances adjacent in thin-film transistor array base-plate, the size of overlapping region can have influence on the display effect of liquid crystal indicator.Because the interference of public (com) electrode metal, overlapping region between two kinds of adjacent photoresistances is not easy measured, namely in the prior art, thin-film transistor array base-plate can't measure the size of the overlapping region between photoresistance adjacent in COA technology, and then can not improve to the overlapping region size between adjacent photoresistance the display effect improving liquid crystal indicator well.
Summary of the invention
The invention provides a kind of thin-film transistor array base-plate, described thin-film transistor array base-plate can measure the size of the overlapping region of adjacent photoresistance well.
A kind of thin-film transistor array base-plate, the frame region that described thin-film transistor array base-plate comprises viewing area and arranges around described viewing area, in described viewing area, multiple thin-film transistor of the distribution in array-like and multiple data wire are set, the first test pattern is formed in described frame region, second test pattern and the 3rd test pattern, distance between described first test pattern and described second test pattern and the distance between described second test pattern and described 3rd test pattern are greater than the distance between two articles of data wires adjacent in described viewing area, described first test pattern comprises the first slotted line, second slotted line and the first photoresistance, described first slotted line and described second slotted line are corresponding with two adjacent data wires in described viewing area respectively, described first photoresistance covers described first slotted line and described second slotted line, and the size of described first photoresistance is corresponding with the size of the first color photoresistance in described viewing area, described second test pattern comprises the 3rd slotted line, the 4th slotted line and the second photoresistance, contiguous described second slotted line of described 3rd slotted line is arranged, described 3rd slotted line and described 4th slotted line are corresponding with two articles of adjacent data wires in described viewing area respectively, described second photoresistance covers described 3rd slotted line and described 4th slotted line, and the size of described second photoresistance is corresponding with the size of the second color photoresistance in described viewing area, described 3rd test pattern comprises the 5th slotted line, 6th slotted line and the 3rd photoresistance, contiguous described 4th slotted line of described 5th slotted line is arranged, and described 5th slotted line and described 6th slotted line are corresponding with two articles of adjacent data wires in described viewing area respectively, described 3rd photoresistance covers described 5th slotted line and described 6th slotted line, and the size of described 3rd photoresistance is corresponding with the size of the 3rd color photoresistance in described viewing area, the width that described first photoresistance exceeds described two slotted lines is the first width, the width that described second photoresistance exceeds described 3rd slotted line and described 4th slotted line is respectively the second width and the 3rd width, the width that described 3rd photoresistance exceeds described 5th slotted line is the 4th width, then in described viewing area, between the first color photoresistance and described second color photoresistance, the width of overlapping region is described first width and described second width sum.
Wherein, the width of the overlapping region in described viewing area between the second color photoresistance and described 3rd color photoresistance is described 3rd width and described 4th width sum.
Wherein, the width of described first slotted line, described second slotted line, described 3rd slotted line, described 4th slotted line, described 5th slotted line and described 6th slotted line is 1/2nd of the width of data wire in described viewing area.
Wherein, described first photoresistance exceeds the width of described second slotted line is the width that described first photoresistance exceeds the center line of described second slotted line; The width that described second photoresistance exceeds described 3rd slotted line is the width that described second photoresistance exceeds the center line of described 3rd slotted line; The width that described second photoresistance exceeds described 4th slotted line is the width that described second photoresistance exceeds the center line of described 4th slotted line; The width that described 3rd photoresistance exceeds described 5th slotted line is the width that described 3rd photoresistance exceeds the center line of described 5th slotted line.
Wherein, described first slotted line, described second slotted line, described 3rd slotted line, described 4th slotted line, described 5th slotted line and described 6th slotted line are formed when the source electrode and the drain electrode that form described thin-film transistor.
Present invention also offers a kind of liquid crystal indicator, described liquid crystal indicator can measure the size of overlapping region between adjacent photoresistance well.
A kind of liquid crystal indicator, described liquid crystal indicator comprises thin-film transistor array base-plate, the frame region that described thin-film transistor array base-plate comprises viewing area and arranges around described viewing area, in described viewing area, multiple thin-film transistor of the distribution in array-like and multiple data wire are set, the first test pattern is formed in described frame region, second test pattern and the 3rd test pattern, distance between described first test pattern and described second test pattern and the distance between described second test pattern and described 3rd test pattern are greater than the distance between two articles of data wires adjacent in described viewing area, described first test pattern comprises the first slotted line, second slotted line and the first photoresistance, described first slotted line and described second slotted line are corresponding with two adjacent data wires in described viewing area respectively, described first photoresistance covers described first slotted line and described second slotted line, and the size of described first photoresistance is corresponding with the size of the first color photoresistance in described viewing area, described second test pattern comprises the 3rd slotted line, the 4th slotted line and the second photoresistance, contiguous described second slotted line of described 3rd slotted line is arranged, described 3rd slotted line and described 4th slotted line are corresponding with two articles of adjacent data wires in described viewing area respectively, described second photoresistance covers described 3rd slotted line and described 4th slotted line, and the size of described second photoresistance is corresponding with the size of the second color photoresistance in described viewing area, described 3rd test pattern comprises the 5th slotted line, 6th slotted line and the 3rd photoresistance, contiguous described 4th slotted line of described 5th slotted line is arranged, and described 5th slotted line and described 6th slotted line are corresponding with two articles of adjacent data wires in described viewing area respectively, described 3rd photoresistance covers described 5th slotted line and described 6th slotted line, and the size of described 3rd photoresistance is corresponding with the size of the 3rd color photoresistance in described viewing area, the width that described first photoresistance exceeds described two slotted lines is the first width, the width that described second photoresistance exceeds described 3rd slotted line and described 4th slotted line is respectively the second width and the 3rd width, the width that described 3rd photoresistance exceeds described 5th slotted line is the 4th width, then in described viewing area, between the first color photoresistance and described second color photoresistance, the width of overlapping region is described first width and described second width sum.
Wherein, the width of the overlapping region in described viewing area between the second color photoresistance and described 3rd color photoresistance is described 3rd width and described 4th width sum.
Wherein, the width of described first slotted line, described second slotted line, described 3rd slotted line, described 4th slotted line, described 5th slotted line and described 6th slotted line is 1/2nd of the width of data wire in described viewing area.
Wherein, described first photoresistance exceeds the width of described second slotted line is the width that described first photoresistance exceeds the center line of described second slotted line; The width that described second photoresistance exceeds described 3rd slotted line is the width that described second photoresistance exceeds the center line of described 3rd slotted line; The width that described second photoresistance exceeds described 4th slotted line is the width that described second photoresistance exceeds the center line of described 4th slotted line; The width that described 3rd photoresistance exceeds described 5th slotted line is the width that described 3rd photoresistance exceeds the center line of described 5th slotted line.
Wherein, described first slotted line, described second slotted line, described 3rd slotted line, described 4th slotted line, described 5th slotted line and described 6th slotted line are formed when the source electrode and the drain electrode that form described thin-film transistor.
Thin-film transistor array base-plate of the present invention and liquid crystal indicator arrange the first test pattern, the second test pattern and the 3rd test pattern in the frame region of thin-film transistor array base-plate.Described first test pattern, described second test pattern and described 3rd test pattern comprise two articles of slotted lines and photoresistance respectively, two slotted lines in each test pattern are corresponding with two the adjacent data wires in described viewing area respectively, and the photoresistance of each test pattern is corresponding with the first color photoresistance in a of viewing area, the second color photoresistance and the 3rd color photoresistance respectively.Thus the relation between described first photoresistance with two data wires that the first color photoresistance in the relation between described first slotted line and described second slotted line and viewing area and described first color photoresistance cover is corresponding; Relation between described second photoresistance with two articles of data wires that the second color photoresistance in the relation between described 3rd slotted line and described 4th slotted line and described viewing area and described second color photoresistance cover is corresponding; Relation between described 3rd photoresistance with two articles of data wires that the 3rd color photoresistance in the relation between described 5th slotted line and described 6th slotted line and described viewing area and described second color photoresistance cover is corresponding.Thus, by measuring described first width, described second width, described 3rd width and described 4th width, described first width and described second width sum is obtained.Thus be not easy the width measure of measured overlapping region out by between the first color photoresistance described in viewing area and described second color photoresistance, and by the width measure being not easy measured overlapping region out between described second color photoresistance and described 3rd color photoresistance out, so that follow-up, overlapping region between the first adjacent color photoresistance and the second color photoresistance and the overlapping region between the second color photoresistance and the 3rd color photoresistance are improved.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of the thin-film transistor array base-plate of the present invention one better embodiment.
Fig. 2 is the first test pattern, the second test pattern and the 3rd test pattern enlarged diagram in Fig. 1 in thin-film transistor array base-plate.
Fig. 3 is the structural representation of the liquid crystal indicator of the present invention one better embodiment.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
See also Fig. 1 and Fig. 2, Fig. 1 is the structural representation of the thin-film transistor array base-plate of the present invention one better embodiment; Fig. 2 is the first test pattern, the second test pattern and the 3rd test pattern enlarged diagram in Fig. 1 in thin-film transistor array base-plate.Described thin-film transistor array base-plate 100 is the thin-film transistor array base-plate adopting COA technology, and in the present embodiment, described thin-film transistor array base-plate 100 comprises the thin film transistor (TFT) array be made up of multiple thin-film transistor 120 and the color film be arranged on described thin film transistor (TFT) array.Described color film comprises multiple color film unit, and each color film unit comprises the first color photoresistance (not shown), the second color photoresistance (not shown) and the 3rd color photoresistance (not shown).The frame region b that described thin-film transistor array base-plate 100 comprises viewing area a and arranges around described viewing area a.Multiple thin-film transistors 120 and multiple data wire 130 of the distribution in array-like are set in described viewing area a.Described frame region b is the non-display area of described thin-film transistor array base-plate 100, and described frame region b forms the first test pattern 150, second test pattern 160 and the 3rd test pattern 170.Distance between described first test pattern 150 and described second test pattern 160, and the spacing of be connected two articles of data wires 130 that is at least in described viewing area a of the distance between described second test pattern 160 with described 3rd test pattern 170 is greater than the distance between two articles of data wires 130 adjacent in described viewing area a.
Described first test pattern 150 comprises the first slotted line 151, second slotted line 152 and the first photoresistance 153.Described first slotted line 151 and described second slotted line 152 are corresponding with two adjacent data wires 130 in described viewing area a respectively, described first photoresistance 153 covers described first slotted line 151 and described second slotted line 152, and the size of described first photoresistance 153 is corresponding with the size of the first color photoresistance in described viewing area a.In the present embodiment, the relative position relation of two that cover under the relative position relation of described first photoresistance 153 and described first slotted line 151 and described second slotted line 152 and described first color photoresistance and described first color photoresistance adjacent data wires 130 is corresponding.For example, the width that described first photoresistance 153 exceeds described first slotted line 151 is equal with the width that described first color photoresistance exceeds the data wire 130 corresponding with described first slotted line 151, and the width that described first photoresistance 153 exceeds described second slotted line 152 is equal with the width that described first color photoresistance exceeds the data wire 130 corresponding with described second slotted line 152.
Described second test pattern 160 comprises the 3rd slotted line 161, the 4th slotted line 162 and the second photoresistance 163.Contiguous described second slotted line 152 of described 3rd slotted line 161 is arranged, described 3rd slotted line 161 and described 4th slotted line 162 are corresponding with two articles of adjacent data wires 130 in described viewing area a respectively, described second photoresistance 163 covers described 3rd slotted line 161 and described 4th slotted line 162, and the size of described second photoresistance 163 is corresponding with the size of the second color photoresistance in described viewing area a.In the present embodiment, the relative position relation of two articles that cover under the relative position relation of described second photoresistance 163 and described 3rd slotted line 161 and described 4th slotted line 162 and described second color photoresistance and described second color photoresistance adjacent data wires 130 is corresponding.For example, the width that the width that described second photoresistance 163 exceeds described 3rd slotted line 161 and described second color photoresistance exceed data wire 130 corresponding to described 3rd slotted line 161 is equal, and the width that described second photoresistance 163 exceeds described 4th slotted line 162 is equal with the width that described second color photoresistance exceeds the data wire 130 corresponding with described 4th slotted line 162.
Described 3rd test pattern 170 comprises the 5th slotted line 171, the 6th slotted line 172 and the 3rd photoresistance 173.Contiguous described 4th slotted line 162 of described 5th slotted line 171 is arranged, and described 5th slotted line 171 and described 6th slotted line 172 are corresponding with two articles of adjacent data wires 130 in described viewing area a respectively, described 3rd photoresistance 173 covers described 5th slotted line 171 and described 6th slotted line, and the size of described 3rd photoresistance 173 is corresponding with the size of the 3rd color photoresistance in described viewing area a.In the present embodiment, the relative position relation of two articles that cover under the relative position relation of described 3rd photoresistance 173 and described 5th slotted line 171 and described 6th slotted line 172 and described 3rd color photoresistance and described 3rd color photoresistance adjacent data wires 130 is corresponding.For example, the width that the width that described 3rd photoresistance 173 exceeds described 5th slotted line 171 and described 3rd color photoresistance exceed data wire 130 corresponding to described 5th slotted line 171 is equal, and the width that described 3rd photoresistance 173 exceeds described 6th slotted line 172 is equal with the width that described 3rd color photoresistance exceeds the data wire 130 corresponding with described 6th slotted line 172.
The width that described first photoresistance 153 exceeds described second slotted line 152 is the first width W 1, the width that described second photoresistance 163 exceeds described 3rd slotted line 161 and described 4th slotted line 162 is respectively the second width W 2 and the 3rd width W 3, and the width that described 3rd photoresistance 173 exceeds described 5th slotted line 171 is the 4th width W 4.Then in described viewing area a, between the first color photoresistance and described second color photoresistance, the width of overlapping region is described first width W 1 and described second width W 2 sum.
In the present embodiment, described first slotted line 151 and described second slotted line 152 are corresponding with two adjacent data wires 130 in described viewing area a respectively refers to that described first slotted line 151 and described second slotted line 152 to lay respectively in described viewing area a on the extended line of two adjacent data wires 130.Described 3rd slotted line 161 and described 4th slotted line 162 are corresponding with two articles of adjacent data wires 130 in described viewing area a respectively refers to that described 3rd slotted line 161 and described 4th slotted line 162 to lay respectively in described viewing area a on the extended line of two articles of adjacent data wires 130.Described 5th slotted line 171 and described 6th slotted line 172 are corresponding with two articles of adjacent data wires 130 in described viewing area a respectively refers to that described 5th slotted line 171 and described 6th slotted line 172 to lay respectively in described viewing area a on the extended line of two articles of adjacent data wires 130.
The width of the overlapping region in described viewing area a between described second color photoresistance and described 3rd color photoresistance is described 3rd width W 3 and described 4th width W 4 sum.
Preferably, the width of described first slotted line 151, described second slotted line 152, described 3rd slotted line 161, described 4th slotted line 162, described 5th slotted line 171 and described 6th slotted line 172 is 1/2nd of the width of data wire 130 in described viewing area a.Now, the width that described first photoresistance 153 exceeds described second slotted line 152 is specially the width that described first photoresistance 153 exceeds the center line of described second slotted line 152.The width that described second photoresistance 163 exceeds described 3rd slotted line 161 is the width that described second photoresistance 163 exceeds the center line of described 3rd slotted line 161, and the width that described second photoresistance 163 exceeds described 4th slotted line 162 is the width that described second photoresistance 163 exceeds the center line of described 4th slotted line 162.The width that described 3rd photoresistance 173 exceeds described 5th slotted line 171 is the width that described 3rd photoresistance 173 exceeds the center line of described 5th slotted line 171.
Preferably, described first slotted line 151, described second slotted line 152, described 3rd slotted line 161, described 4th slotted line 162, described 5th slotted line 171 and described 6th slotted line 172 are metal wire.Preferably, described first slotted line 151, described second slotted line 152, described 3rd slotted line 161, described 4th slotted line 162, described 5th slotted line 171 and described 6th slotted line 172 are all formed when the source electrode of described thin-film transistor 120 and drain electrode, to simplify the manufacturing process of described thin-film transistor array base-plate 100.
Described first color photoresistance, described second color photoresistance and described 3rd color photoresistance are the combination in any of red photoresistance, blue light resistance and these three kinds of color photoresistances of green photoresistance.In the present embodiment, the color of described first photoresistance 151, described second photoresistance 163 and described 3rd photoresistance 173 is identical with the color of described first color photoresistance, described second color photoresistance and described 3rd color photoresistance respectively.Understandably, in other embodiments, described first photoresistance 151, described second photoresistance 163 and described 3rd photoresistance 173 can be not identical with the color of described first color photoresistance, described second color photoresistance and described 3rd color photoresistance yet, can be set to other color yet.
Compare with prior art, the present invention arranges the first test pattern 150, second test pattern 160 and the 3rd test pattern 170 at the frame region b of thin-film transistor array base-plate 100.Described first test pattern 150, described second test pattern 160 and described 3rd test pattern 170 comprise two articles of slotted lines and photoresistance respectively, two slotted lines in each test pattern are corresponding with two the adjacent data wires 130 in described viewing area a respectively, and the photoresistance of each test pattern is corresponding with the first color photoresistance in a of viewing area, the second color photoresistance and the 3rd color photoresistance respectively.Thus the relation between described first photoresistance 153 with two data wires 130 that the first color photoresistance in the relation between described first slotted line 151 and described second slotted line 152 and viewing area a and described first color photoresistance cover is corresponding; Relation between described second photoresistance 163 with two articles of data wires 130 that the second color photoresistance in the relation between described 3rd slotted line 161 and described 4th slotted line 162 and described viewing area a and described second color photoresistance cover is corresponding; Relation between described 3rd photoresistance 173 with two articles of data wires 130 that the 3rd color photoresistance in the relation between described 5th slotted line 171 and described 6th slotted line 172 and described viewing area a and described second color photoresistance cover is corresponding.Thus, by measuring described first width, described second width, described 3rd width and described 4th width, described first width and described second width sum is obtained.Thus be not easy the width measure of measured overlapping region out by between the first color photoresistance described in a of viewing area and described second color photoresistance, and by the width measure being not easy measured overlapping region out between described second color photoresistance and described 3rd color photoresistance out, so that follow-up, overlapping region between the first adjacent color photoresistance and the second color photoresistance and the overlapping region between the second color photoresistance and the 3rd color photoresistance are improved.
Below in conjunction with Fig. 1 and Fig. 2, the structure of liquid crystal indicator of the present invention is introduced.Refer to Fig. 3, Fig. 3 is the structural representation of the liquid crystal indicator of the present invention one better embodiment.Described liquid crystal indicator 10 comprises thin-film transistor array base-plate 100, liquid crystal layer 200 and optical filtering substrate 300.Described thin-film transistor array base-plate 100 is oppositely arranged with described optical filtering substrate 300, and described liquid crystal layer 200 is arranged between described thin-film transistor array base-plate 100 and described optical filtering substrate 300.Described thin-film transistor array base-plate 100 is the thin-film transistor array base-plate adopting COA technology, and in the present embodiment, described thin-film transistor array base-plate 100 comprises the thin film transistor (TFT) array be made up of multiple thin-film transistor 120 and the color film be arranged on described thin film transistor (TFT) array.Described color film comprises multiple color film unit, and each color film unit comprises the first color photoresistance, the second color photoresistance and the 3rd color photoresistance.
The frame region b that described thin-film transistor array base-plate 100 comprises viewing area a and arranges around described viewing area a.Multiple thin-film transistors 120 and multiple data wire 130 of the distribution in array-like are set in described viewing area a.Described frame region b is the non-display area of described thin-film transistor array base-plate 100, and described frame region b forms the first test pattern 150, second test pattern 160 and the 3rd test pattern 170.Distance between described first test pattern 150 and described second test pattern 160, and the spacing of be connected two articles of data wires 130 that is at least in described viewing area a of the distance between described second test pattern 160 with described 3rd test pattern 170 is greater than the distance between two articles of data wires 130 adjacent in described viewing area a.
Described first test pattern 150 comprises the first slotted line 151, second slotted line 152 and the first photoresistance 153.Described first slotted line 151 and described second slotted line 152 are corresponding with two adjacent data wires 130 in described viewing area a respectively, described first photoresistance 153 covers described first slotted line 151 and described second slotted line 152, and the size of described first photoresistance 153 is corresponding with the size of the first color photoresistance in described viewing area a.In the present embodiment, the relative position relation of two that cover under the relative position relation of described first photoresistance 153 and described first slotted line 151 and described second slotted line 152 and described first color photoresistance and described first color photoresistance adjacent data wires 130 is corresponding.For example, the width that described first photoresistance 153 exceeds described first slotted line 151 is equal with the width that described first color photoresistance exceeds the data wire 130 corresponding with described first slotted line 151, and the width that described first photoresistance 153 exceeds described second slotted line 152 is equal with the width that described first color photoresistance exceeds the data wire 130 corresponding with described second slotted line 152.
Described second test pattern 160 comprises the 3rd slotted line 161, the 4th slotted line 162 and the second photoresistance 163.Contiguous described second slotted line 152 of described 3rd slotted line 161 is arranged, described 3rd slotted line 161 and described 4th slotted line 162 are corresponding with two articles of adjacent data wires 130 in described viewing area a respectively, described second photoresistance 163 covers described 3rd slotted line 161 and described 4th slotted line 162, and the size of described second photoresistance 163 is corresponding with the size of the second color photoresistance in described viewing area a.In the present embodiment, the relative position relation of two articles that cover under the relative position relation of described second photoresistance 163 and described 3rd slotted line 161 and described 4th slotted line 162 and described second color photoresistance and described second color photoresistance adjacent data wires 130 is corresponding.For example, the width that the width that described second photoresistance 163 exceeds described 3rd slotted line 161 and described second color photoresistance exceed data wire 130 corresponding to described 3rd slotted line 161 is equal, and the width that described second photoresistance 163 exceeds described 4th slotted line 162 is equal with the width that described second color photoresistance exceeds the data wire 130 corresponding with described 4th slotted line 162.
Described 3rd test pattern 170 comprises the 5th slotted line 171, the 6th slotted line 172 and the 3rd photoresistance 173.Contiguous described 4th slotted line 162 of described 5th slotted line 171 is arranged, and described 5th slotted line 171 and described 6th slotted line 172 are corresponding with two articles of adjacent data wires 130 in described viewing area a respectively, described 3rd photoresistance 173 covers described 5th slotted line 171 and described 6th slotted line, and the size of described 3rd photoresistance 173 is corresponding with the size of the 3rd color photoresistance in described viewing area a.In the present embodiment, the relative position relation of two articles that cover under the relative position relation of described 3rd photoresistance 173 and described 5th slotted line 171 and described 6th slotted line 172 and described 3rd color photoresistance and described 3rd color photoresistance adjacent data wires 130 is corresponding.For example, the width that the width that described 3rd photoresistance 173 exceeds described 5th slotted line 171 and described 3rd color photoresistance exceed data wire 130 corresponding to described 5th slotted line 171 is equal, and the width that described 3rd photoresistance 173 exceeds described 6th slotted line 172 is equal with the width that described 3rd color photoresistance exceeds the data wire 130 corresponding with described 6th slotted line 172.
The width that described first photoresistance 153 exceeds described second slotted line 152 is the first width W 1, the width that described second photoresistance 163 exceeds described 3rd slotted line 161 and described 4th slotted line 162 is respectively the second width W 2 and the 3rd width W 3, and the width that described 3rd photoresistance 173 exceeds described 5th slotted line 171 is the 4th width W 4.Then in described viewing area a, between the first color photoresistance and described second color photoresistance, the width of overlapping region is described first width W 1 and described second width W 2 sum.
In the present embodiment, described first slotted line 151 and described second slotted line 152 are corresponding with two adjacent data wires 130 in described viewing area a respectively refers to that described first slotted line 151 and described second slotted line 152 to lay respectively in described viewing area a on the extended line of two adjacent data wires 130.Described 3rd slotted line 161 and described 4th slotted line 162 are corresponding with two articles of adjacent data wires 130 in described viewing area a respectively refers to that described 3rd slotted line 161 and described 4th slotted line 162 to lay respectively in described viewing area a on the extended line of two articles of adjacent data wires 130.Described 5th slotted line 171 and described 6th slotted line 172 are corresponding with two articles of adjacent data wires 130 in described viewing area a respectively refers to that described 5th slotted line 171 and described 6th slotted line 172 to lay respectively in described viewing area a on the extended line of two articles of adjacent data wires 130.
The width of the overlapping region in described viewing area a between described second color photoresistance and described 3rd color photoresistance is described 3rd width W 3 and described 4th width W 4 sum.
Preferably, the width of described first slotted line 151, described second slotted line 152, described 3rd slotted line 161, described 4th slotted line 162, described 5th slotted line 171 and described 6th slotted line 172 is 1/2nd of the width of data wire 130 in described viewing area a.Now, the width that described first photoresistance 153 exceeds described second slotted line 152 is specially the width that described first photoresistance 153 exceeds the center line of described second slotted line 152.The width that described second photoresistance 163 exceeds described 3rd slotted line 161 is the width that described second photoresistance 163 exceeds the center line of described 3rd slotted line 161, and the width that described second photoresistance 163 exceeds described 4th slotted line 162 is the width that described second photoresistance 163 exceeds the center line of described 4th slotted line 162.The width that described 3rd photoresistance 173 exceeds described 5th slotted line 171 is the width that described 3rd photoresistance 173 exceeds the center line of described 5th slotted line 171.
Preferably, described first slotted line 151, described second slotted line 152, described 3rd slotted line 161, described 4th slotted line 162, described 5th slotted line 171 and described 6th slotted line 172 are metal wire.Preferably, described first slotted line 151, described second slotted line 152, described 3rd slotted line 161, described 4th slotted line 162, described 5th slotted line 171 and described 6th slotted line 172 are all formed when the source electrode of described thin-film transistor 120 and drain electrode, to simplify the manufacturing process of described thin-film transistor array base-plate 100.
Described first color photoresistance, described second color photoresistance and described 3rd color photoresistance are the combination in any of red photoresistance, blue light resistance and these three kinds of color photoresistances of green photoresistance.In the present embodiment, the color of described first photoresistance 151, described second photoresistance 163 and described 3rd photoresistance 173 is identical with the color of described first color photoresistance, described second color photoresistance and described 3rd color photoresistance respectively.Understandably, in other embodiments, described first photoresistance 151, described second photoresistance 163 and described 3rd photoresistance 173 can be not identical with the color of described first color photoresistance, described second color photoresistance and described 3rd color photoresistance yet, can be set to other color yet.
Compare with prior art, liquid crystal indicator 10 of the present invention arranges the first test pattern 150, second test pattern 160 and the 3rd test pattern 170 at the frame region b of thin-film transistor array base-plate 100.Described first test pattern 150, described second test pattern 160 and described 3rd test pattern 170 comprise two articles of slotted lines and photoresistance respectively, two slotted lines in each test pattern are corresponding with two the adjacent data wires 130 in described viewing area a respectively, and the photoresistance of each test pattern is corresponding with the first color photoresistance in a of viewing area, the second color photoresistance and the 3rd color photoresistance respectively.Thus the relation between described first photoresistance 153 with two data wires 130 that the first color photoresistance in the relation between described first slotted line 151 and described second slotted line 152 and viewing area a and described first color photoresistance cover is corresponding; Relation between described second photoresistance 163 with two articles of data wires 130 that the second color photoresistance in the relation between described 3rd slotted line 161 and described 4th slotted line 162 and described viewing area a and described second color photoresistance cover is corresponding; Relation between described 3rd photoresistance 173 with two articles of data wires 130 that the 3rd color photoresistance in the relation between described 5th slotted line 171 and described 6th slotted line 172 and described viewing area a and described second color photoresistance cover is corresponding.Thus, by measuring described first width, described second width, described 3rd width and described 4th width, described first width and described second width sum is obtained.Thus be not easy the width measure of measured overlapping region out by between the first color photoresistance described in a of viewing area and described second color photoresistance, and by the width measure being not easy measured overlapping region out between described second color photoresistance and described 3rd color photoresistance out, so that follow-up, overlapping region between the first adjacent color photoresistance and the second color photoresistance and the overlapping region between the second color photoresistance and the 3rd color photoresistance are improved.
Above disclosedly be only a kind of preferred embodiment of the present invention, certainly the interest field of the present invention can not be limited with this, one of ordinary skill in the art will appreciate that all or part of flow process realizing above-described embodiment, and according to the equivalent variations that the claims in the present invention are done, still belong to the scope that invention is contained.

Claims (10)

1. a thin-film transistor array base-plate, it is characterized in that, the frame region that described thin-film transistor array base-plate comprises viewing area and arranges around described viewing area, in described viewing area, multiple thin-film transistor of the distribution in array-like and multiple data wire are set, the first test pattern is formed in described frame region, second test pattern and the 3rd test pattern, distance between described first test pattern and described second test pattern and the distance between described second test pattern and described 3rd test pattern are greater than the distance between two articles of data wires adjacent in described viewing area, described first test pattern comprises the first slotted line, second slotted line and the first photoresistance, described first slotted line and described second slotted line are corresponding with two adjacent data wires in described viewing area respectively, described first photoresistance covers described first slotted line and described second slotted line, and the size of described first photoresistance is corresponding with the size of the first color photoresistance in described viewing area, described second test pattern comprises the 3rd slotted line, the 4th slotted line and the second photoresistance, contiguous described second slotted line of described 3rd slotted line is arranged, described 3rd slotted line and described 4th slotted line are corresponding with two articles of adjacent data wires in described viewing area respectively, described second photoresistance covers described 3rd slotted line and described 4th slotted line, and the size of described second photoresistance is corresponding with the size of the second color photoresistance in described viewing area, described 3rd test pattern comprises the 5th slotted line, 6th slotted line and the 3rd photoresistance, contiguous described 4th slotted line of described 5th slotted line is arranged, and described 5th slotted line and described 6th slotted line are corresponding with two articles of adjacent data wires in described viewing area respectively, described 3rd photoresistance covers described 5th slotted line and described 6th slotted line, and the size of described 3rd photoresistance is corresponding with the size of the 3rd color photoresistance in described viewing area, the width that described first photoresistance exceeds described two slotted lines is the first width, the width that described second photoresistance exceeds described 3rd slotted line and described 4th slotted line is respectively the second width and the 3rd width, the width that described 3rd photoresistance exceeds described 5th slotted line is the 4th width, then in described viewing area, between the first color photoresistance and described second color photoresistance, the width of overlapping region is described first width and described second width sum.
2. thin-film transistor array base-plate as claimed in claim 1, it is characterized in that, the width of the overlapping region in described viewing area between the second color photoresistance and described 3rd color photoresistance is described 3rd width and described 4th width sum.
3. thin-film transistor array base-plate as claimed in claim 1, it is characterized in that, the width of described first slotted line, described second slotted line, described 3rd slotted line, described 4th slotted line, described 5th slotted line and described 6th slotted line is 1/2nd of the width of data wire in described viewing area.
4. thin-film transistor array base-plate as claimed in claim 3, it is characterized in that, the width that described first photoresistance exceeds described second slotted line is the width that described first photoresistance exceeds the center line of described second slotted line; The width that described second photoresistance exceeds described 3rd slotted line is the width that described second photoresistance exceeds the center line of described 3rd slotted line; The width that described second photoresistance exceeds described 4th slotted line is the width that described second photoresistance exceeds the center line of described 4th slotted line; The width that described 3rd photoresistance exceeds described 5th slotted line is the width that described 3rd photoresistance exceeds the center line of described 5th slotted line.
5. thin-film transistor array base-plate as claimed in claim 1, it is characterized in that, described first slotted line, described second slotted line, described 3rd slotted line, described 4th slotted line, described 5th slotted line and described 6th slotted line are formed when the source electrode and the drain electrode that form described thin-film transistor.
6. a liquid crystal indicator, described liquid crystal indicator comprises thin-film transistor array base-plate, it is characterized in that, the frame region that described thin-film transistor array base-plate comprises viewing area and arranges around described viewing area, in described viewing area, multiple thin-film transistor of the distribution in array-like and multiple data wire are set, the first test pattern is formed in described frame region, second test pattern and the 3rd test pattern, distance between described first test pattern and described second test pattern and the distance between described second test pattern and described 3rd test pattern are greater than the distance between two articles of data wires adjacent in described viewing area, described first test pattern comprises the first slotted line, second slotted line and the first photoresistance, described first slotted line and described second slotted line are corresponding with two adjacent data wires in described viewing area respectively, described first photoresistance covers described first slotted line and described second slotted line, and the size of described first photoresistance is corresponding with the size of the first color photoresistance in described viewing area, described second test pattern comprises the 3rd slotted line, the 4th slotted line and the second photoresistance, contiguous described second slotted line of described 3rd slotted line is arranged, described 3rd slotted line and described 4th slotted line are corresponding with two articles of adjacent data wires in described viewing area respectively, described second photoresistance covers described 3rd slotted line and described 4th slotted line, and the size of described second photoresistance is corresponding with the size of the second color photoresistance in described viewing area, described 3rd test pattern comprises the 5th slotted line, 6th slotted line and the 3rd photoresistance, contiguous described 4th slotted line of described 5th slotted line is arranged, and described 5th slotted line and described 6th slotted line are corresponding with two articles of adjacent data wires in described viewing area respectively, described 3rd photoresistance covers described 5th slotted line and described 6th slotted line, and the size of described 3rd photoresistance is corresponding with the size of the 3rd color photoresistance in described viewing area, the width that described first photoresistance exceeds described two slotted lines is the first width, the width that described second photoresistance exceeds described 3rd slotted line and described 4th slotted line is respectively the second width and the 3rd width, the width that described 3rd photoresistance exceeds described 5th slotted line is the 4th width, then in described viewing area, between the first color photoresistance and described second color photoresistance, the width of overlapping region is described first width and described second width sum.
7. liquid crystal indicator as claimed in claim 6, it is characterized in that, the width of the overlapping region in described viewing area between the second color photoresistance and described 3rd color photoresistance is described 3rd width and described 4th width sum.
8. liquid crystal indicator as claimed in claim 6, it is characterized in that, the width of described first slotted line, described second slotted line, described 3rd slotted line, described 4th slotted line, described 5th slotted line and described 6th slotted line is 1/2nd of the width of data wire in described viewing area.
9. liquid crystal indicator as claimed in claim 8, it is characterized in that, the width that described first photoresistance exceeds described second slotted line is the width that described first photoresistance exceeds the center line of described second slotted line; The width that described second photoresistance exceeds described 3rd slotted line is the width that described second photoresistance exceeds the center line of described 3rd slotted line; The width that described second photoresistance exceeds described 4th slotted line is the width that described second photoresistance exceeds the center line of described 4th slotted line; The width that described 3rd photoresistance exceeds described 5th slotted line is the width that described 3rd photoresistance exceeds the center line of described 5th slotted line.
10. liquid crystal indicator as claimed in claim 6, it is characterized in that, described first slotted line, described second slotted line, described 3rd slotted line, described 4th slotted line, described 5th slotted line and described 6th slotted line are formed when the source electrode and the drain electrode that form described thin-film transistor.
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