CN104359412B - 光刻掩模版铬膜厚度测量方法 - Google Patents
光刻掩模版铬膜厚度测量方法 Download PDFInfo
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- CN104359412B CN104359412B CN201410543262.2A CN201410543262A CN104359412B CN 104359412 B CN104359412 B CN 104359412B CN 201410543262 A CN201410543262 A CN 201410543262A CN 104359412 B CN104359412 B CN 104359412B
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 title claims abstract description 60
- 229910052804 chromium Inorganic materials 0.000 title claims abstract description 60
- 239000011651 chromium Substances 0.000 title claims abstract description 60
- 238000000034 method Methods 0.000 title claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 claims abstract description 4
- 239000011521 glass Substances 0.000 claims description 31
- 238000005259 measurement Methods 0.000 claims description 21
- 239000012530 fluid Substances 0.000 claims description 17
- 238000001259 photo etching Methods 0.000 claims description 14
- 230000005284 excitation Effects 0.000 claims description 12
- 239000007788 liquid Substances 0.000 claims description 11
- 238000001514 detection method Methods 0.000 claims description 8
- 239000012528 membrane Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 239000005304 optical glass Substances 0.000 claims description 2
- 230000008676 import Effects 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 abstract description 8
- 238000000053 physical method Methods 0.000 abstract description 2
- 238000005102 attenuated total reflection Methods 0.000 abstract 3
- 239000010453 quartz Substances 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 4
- 239000000523 sample Substances 0.000 description 3
- 238000005094 computer simulation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002795 fluorescence method Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000013332 literature search Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- Length Measuring Devices By Optical Means (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
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Priority Applications (1)
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CN201410543262.2A CN104359412B (zh) | 2014-10-01 | 2014-10-01 | 光刻掩模版铬膜厚度测量方法 |
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CN201410543262.2A CN104359412B (zh) | 2014-10-01 | 2014-10-01 | 光刻掩模版铬膜厚度测量方法 |
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CN104359412A CN104359412A (zh) | 2015-02-18 |
CN104359412B true CN104359412B (zh) | 2017-05-24 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104677315B (zh) * | 2015-03-05 | 2018-04-17 | 上海光刻电子科技有限公司 | 硅片表面不平整度测量方法 |
CN107034436B (zh) * | 2017-04-11 | 2019-10-15 | 京东方科技集团股份有限公司 | 掩膜板组件、检测膜厚的设备及方法 |
CN107504912B (zh) * | 2017-09-22 | 2020-04-17 | 京东方科技集团股份有限公司 | 厚度测试方法及装置 |
CN107807108B (zh) * | 2017-09-30 | 2020-02-04 | 复拓科学仪器(苏州)有限公司 | 一种大量程高分辨率的气液折射率检测方法及装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5830605A (ja) * | 1981-08-18 | 1983-02-23 | Kawasaki Steel Corp | 表面被膜厚さ測定方法 |
JPH07318321A (ja) * | 1994-05-27 | 1995-12-08 | Toppan Printing Co Ltd | 薄膜の膜厚評価方法および膜厚評価装置 |
JP2002277388A (ja) * | 2001-03-14 | 2002-09-25 | National Institute Of Advanced Industrial & Technology | 赤外減衰全反射薄膜測定装置 |
JP2003065946A (ja) * | 2001-08-24 | 2003-03-05 | Fuji Photo Film Co Ltd | 全反射減衰を利用したセンサー |
CN102478395A (zh) * | 2010-11-26 | 2012-05-30 | 宝山钢铁股份有限公司 | 在线检测带钢表面无铬涂层厚度的方法 |
CN102478389A (zh) * | 2010-11-26 | 2012-05-30 | 上海光刻电子科技有限公司 | 光刻掩模版金属膜厚度测量方法 |
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2014
- 2014-10-01 CN CN201410543262.2A patent/CN104359412B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5830605A (ja) * | 1981-08-18 | 1983-02-23 | Kawasaki Steel Corp | 表面被膜厚さ測定方法 |
JPH07318321A (ja) * | 1994-05-27 | 1995-12-08 | Toppan Printing Co Ltd | 薄膜の膜厚評価方法および膜厚評価装置 |
JP2002277388A (ja) * | 2001-03-14 | 2002-09-25 | National Institute Of Advanced Industrial & Technology | 赤外減衰全反射薄膜測定装置 |
JP2003065946A (ja) * | 2001-08-24 | 2003-03-05 | Fuji Photo Film Co Ltd | 全反射減衰を利用したセンサー |
CN102478395A (zh) * | 2010-11-26 | 2012-05-30 | 宝山钢铁股份有限公司 | 在线检测带钢表面无铬涂层厚度的方法 |
CN102478389A (zh) * | 2010-11-26 | 2012-05-30 | 上海光刻电子科技有限公司 | 光刻掩模版金属膜厚度测量方法 |
Non-Patent Citations (2)
Title |
---|
用长程表面模测量超薄金属膜的厚度;杨傅子;《量子电子学》;19860731;第3卷(第2期);第174页第2段-第178页第2段,图1-2 * |
角度调制型表面等离子共振谱仪的设计;黄浩;《中国优秀硕士学位论文全文数据库信息科技辑》;20130831(第8期);正文第4.1.6节 * |
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Address after: Room 502, Warner Business Center, No. 1733 Lianhua Road, Minhang District, Shanghai, 200233 Patentee after: SHANGHAI LITHOGRAPHY ELECTRONIC TECHNOLOGY CO.,LTD. Country or region after: China Address before: 200233 Room 346, No. 1243 Caobao Road, Minhang District, Shanghai Patentee before: SHANGHAI LITHOGRAPHY ELECTRONIC TECHNOLOGY CO.,LTD. Country or region before: China |