CN104347820A - AMOLED (Active Matrix Organic Light Emitting Diode) device and preparation method - Google Patents
AMOLED (Active Matrix Organic Light Emitting Diode) device and preparation method Download PDFInfo
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- CN104347820A CN104347820A CN201410531280.9A CN201410531280A CN104347820A CN 104347820 A CN104347820 A CN 104347820A CN 201410531280 A CN201410531280 A CN 201410531280A CN 104347820 A CN104347820 A CN 104347820A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
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Abstract
The invention discloses an AMOLED (Active Matrix Organic Light Emitting Diode) device preparation method. The method comprises the steps of forming a polymeric substrate; preparing a substrate barrier layer on the polymeric substrate, wherein the substrate barrier layer is a barrier layer comprising a plurality of layers of graphene films or a barrier layer formed by a plurality of graphene films and organic films which are mutually alternated; preparing a thin film transistor array and an organic light emitting function material layer on the substrate barrier layer and conducting cathode evaporation to form a cathode; preparing a packaging barrier layer on the cathode, wherein the packaging barrier layer is a barrier layer comprising a plurality of graphene films or a barrier layer formed by a plurality of graphene films and organic films which are mutually alternated. The invention further correspondingly discloses an AMOLED device. By adopting the technical scheme provided by the invention, the requirement on high flexibility of the AMOLED device can be satisfied.
Description
Technical field
The present invention relates to display device technical field, particularly relate to a kind of AMOLED device and preparation method.
Background technology
AMOLED (Active Matrix Organic Light Emitting Diode, active matrix organic light-emitting diode) be display floater of new generation, compared to general liquid crystal panel, there is the technological merit that reaction speed is faster, contrast is higher, visual angle is wider.
The baseplate material of flexible AMOLED is generally polymeric substrates, its water vapor transmittance and OTR oxygen transmission rate higher, steam or oxygen enter AMOLED device, the degraded of organic luminescence function material can be caused, therefore, need to make on the encapsulating structure of substrate and device barrier layer (barrier) and stop entering of steam and oxygen.
Inventor finds under study for action, and the problem of conventional art is, existing barrier layer materials generally chooses the inorganic material such as AlOx, SiNx, SiOx, and the fragility of these materials is higher, can not meet the requirement of the high flexibility of AMOLED device.
Summary of the invention
Based on this, be necessary to provide a kind of AMOLED device preparation method, application this method, can meet the high flexibility requirement of AMOLED device.
A kind of AMOLED device preparation method, comprising:
Form polymeric substrates;
Described polymeric substrates makes substrate barrier layer, and described substrate barrier layer is the barrier layer comprising multi-layer graphene film, or the barrier layer that multi-layer graphene film and organic substance film replace mutually;
Described substrate barrier layer makes thin film transistor (TFT) array and organic luminescence function material layer, and carries out negative electrode evaporation formation negative electrode;
Make encapsulated barrier layer on the cathode, described encapsulated barrier layer is for comprising the barrier layer of multi-layer graphene film, or the barrier layer that multi-layer graphene film and organic substance film replace mutually.
In one embodiment, the step of described formation polymeric substrates, comprising:
Adopt the mode of slit coating or rotary coating, carrier forms polymeric substrates.
In one embodiment, described polymeric substrates is the one in PEN substrate, PI substrate, PES substrate, PEEK substrate.
In one embodiment, the thickness of polymeric substrates carrier formed is 5-100 micron.
In one embodiment, described polymeric substrates makes the step of substrate barrier layer, at least comprise the process making graphene film;
Make the step of encapsulated barrier layer on the cathode, at least comprise making graphene film.
In one embodiment, the step of described making graphene film, comprising:
Oxidation-reduction method is adopted directly to prepare graphene film; Or
First adopt vapour deposition process deposited graphite alkene film on metal foil, then carry out chemistry or electrochemistry transfer.
In one embodiment, the thickness of described graphene film is 30 nanometers to 1 micron.
In one embodiment, described polymeric substrates makes the step of substrate barrier layer, also comprise the process making organic substance film;
Make the step of encapsulated barrier layer on the cathode, also comprise and make organic substance film.
In one embodiment, described organic substance film is the one in PCL film, PMMA film, HMDSO film.
In one embodiment, the number of plies of described graphene film and described organic substance film is 1 to 10 layer simultaneously.
Based on this, there is a need to provide a kind of AMOLED device, the high flexibility requirement of AMOLED device can be met.
A kind of AMOLED device, comprising:
Polymeric substrates;
Be made in the substrate barrier layer on described polymeric substrates, described substrate barrier layer is the barrier layer comprising multi-layer graphene film, or the barrier layer that multi-layer graphene film and organic substance film replace mutually;
Be made in the thin film transistor (TFT) array on described substrate barrier layer and organic luminescence function material layer, described organic luminescence function material layer is provided with the negative electrode formed through negative electrode evaporation;
Be made in the encapsulated barrier layer on described negative electrode, described encapsulated barrier layer is for comprising the barrier layer of multi-layer graphene film, or the barrier layer that multi-layer graphene film and organic substance film replace mutually.
In one embodiment, described polymeric substrates is the polymeric substrates adopting the mode of slit coating or rotary coating to be formed; Described polymeric substrates is the one in PEN substrate, PI substrate, PES substrate, PEEK substrate; The thickness of described polymeric substrates is 5-100 micron.
In one embodiment, described substrate barrier layer is the barrier layer that multi-layer graphene film and organic substance film replace mutually;
Described encapsulated barrier layer is the barrier layer that multi-layer graphene film and organic substance film replace mutually;
The thickness of described graphene film is 30 nanometers to 1 micron;
Described organic substance film is the one in PCL film, PMMA film, HMDSO film;
The number of plies of described graphene film and described organic substance film is 1 to 10 layer simultaneously.
Above-mentioned AMOLED device preparation method and device, when making substrate barrier layer and encapsulated barrier layer, select the barrier layer formed by multi-layer graphene film, or the barrier layer alternately to be formed by multi-layer graphene film and organic substance film, inorganic material is selected compared in conventional art, due to grapheme material high barrier and height flexible, not only meet the stop requirement of barrier layer to steam and oxygen, high flexibility requirement can also be met.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet of the AMOLED device preparation method in an embodiment;
Fig. 2 is the structural representation of the AMOLED device in an embodiment.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
See Fig. 1, provide a kind of AMOLED device preparation method in one embodiment.The method may be used for preparing the application scenarios meeting high flexibility AMOLED device.The method comprises:
Step 101, forms polymeric substrates.
Concrete, in the present embodiment, slit can be adopted to be coated with the mode of (slit coating) or rotary coating (spin coating), glass carrier forms polymeric substrates.This polymeric substrates can be, but not limited to as the one in PEN (PEN film) substrate, PI (polyimide film) substrate, PES (polyethersulfone resin) substrate, PEEK (polyether-ether-ketone) substrate.The thickness of polymeric substrates is 5-100 micron.
Step 102, polymeric substrates makes substrate barrier (barrier) layer.
Specifically in the present embodiment, substrate barrier layer can be the barrier layer comprising multi-layer graphene film, also can be the barrier layer that multi-layer graphene film and organic substance film replace mutually.
Alternatively, substrate barrier layer is the barrier layer that multi-layer graphene film and organic substance film replace mutually.The step making substrate barrier layer just comprises the process making graphene film and make organic substance film.In the present embodiment, Graphene has barrier property the highest in existing material, and flexible very good.
Wherein, make graphene film and can adopt oxidation-reduction method or vapour deposition process.Directly graphene film is prepared according to oxidation-reduction method, first graphite oxide is prepared, first graphite powder is dispersed in strong oxidizing property mixed acid, as red fuming nitric acid (RFNA) and the concentrated sulfuric acid, then add the strong oxidizer such as potassium permanganate or potassium chlorate and obtain graphite oxide, obtain graphene oxide through ultrasonic process again, obtain Graphene finally by reduction.According to vapour deposition process, first adopt vapour deposition process in metal forming, as deposited graphite alkene film on Copper Foil or nickel foil, then carry out chemistry or electrochemistry is transferred on substrate.In the present embodiment, the thickness of graphene film is 30 nanometers to 1 micron.
Organic substance film can be the one in PCL (polycaprolactone) film, PMMA (acrylic) film, HMDSO (Hexamethyldisiloxane) film.Organic substance film and graphene film replace mutually, and the number of plies is 1 to 10 layer simultaneously.
Step 103, substrate barrier layer makes thin film transistor (TFT) array and organic luminescence function material layer, and on organic luminescence function material layer, carry out negative electrode evaporation formation negative electrode.
Concrete, make thin film transistor (TFT) array (TFT array), organic luminescence function material layer in this step, negative electrode evaporation can with reference to conventional art.AMOLED is as the one of OLED, it utilizes organic semiconducting materials and luminescent material under electric field driven, causes luminescence by carrier injection and compound.
Step 104, negative electrode makes encapsulated barrier layer.
Concrete, negative electrode makes encapsulated barrier layer, and encapsulated barrier layer is for comprising the barrier layer of multi-layer graphene film, or the barrier layer that multi-layer graphene film and organic substance film replace mutually.
In this step, the process making graphene film is identical with step 102, and in this not go into detail.If this step encapsulated barrier layer adopts graphene film and organic substance film alternately, its number of plies is 1 to 10 layer simultaneously, and organic substance film is the one in PCL film, PMMA film, HMDSO film.
AMOLED device preparation method in above-described embodiment, when making substrate barrier layer and encapsulated barrier layer, select the barrier layer formed by multi-layer graphene film, or the barrier layer alternately to be formed by multi-layer graphene film and organic substance film, inorganic material is selected compared in conventional art, due to grapheme material high barrier and height flexible, not only meet the stop requirement of barrier layer to steam and oxygen, high flexibility requirement can also be met.
See Fig. 2, provide a kind of AMOLED device in one embodiment.This device can meet the high flexibility requirement of AMOLED device.This device comprises:
Polymeric substrates 201.
Be made in the substrate barrier layer 202 on polymeric substrates 201.Concrete, substrate barrier layer is the barrier layer comprising multi-layer graphene film 2001, or the barrier layer that multi-layer graphene film 2001 replaces mutually with organic substance film 2002.
Be made in the thin film transistor (TFT) array 203 on substrate barrier layer 202 and organic luminescence function material layer 204, organic luminescence function material layer 204 is provided with the negative electrode formed through negative electrode evaporation.
Be made in the encapsulated barrier layer 205 on negative electrode.Concrete, encapsulated barrier layer 205 is for comprising the barrier layer of multi-layer graphene film 2001, or the barrier layer that multi-layer graphene film 2001 replaces mutually with organic substance film 2002.
Optionally, in one embodiment, polymeric substrates 201 is the polymeric substrates adopting the mode of slit coating or rotary coating to be formed on carrier 1000.Polymeric substrates is the one in PEN substrate, PI substrate, PES substrate, PEEK substrate.The thickness of polymeric substrates is 5-100 micron.
In one embodiment, substrate barrier layer 202 is the barrier layer that multi-layer graphene film 2001 replaces mutually with organic substance film 2002.Encapsulated barrier layer 205 is the barrier layer that multi-layer graphene film 2001 replaces mutually with organic substance film 2002.The thickness of graphene film 2001 is 30 nanometers to 1 micron.Organic substance film 2002 is the one in PCL film, PMMA film, HMDSO film.The number of plies of graphene film and organic substance film is 1 to 10 layer simultaneously.
AMOLED device in above-described embodiment, when making substrate barrier layer and encapsulated barrier layer, select the barrier layer formed by multi-layer graphene film, or the barrier layer alternately to be formed by multi-layer graphene film and organic substance film, inorganic material is selected compared in conventional art, due to grapheme material high barrier and height flexible, not only meet the stop requirement of barrier layer to steam and oxygen, high flexibility requirement can also be met.
The above embodiment only have expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (13)
1. an AMOLED device preparation method, is characterized in that, described method comprises:
Form polymeric substrates;
Described polymeric substrates makes substrate barrier layer, and described substrate barrier layer is the barrier layer comprising multi-layer graphene film, or the barrier layer that multi-layer graphene film and organic substance film replace mutually;
Described substrate barrier layer makes thin film transistor (TFT) array and organic luminescence function material layer, and carries out negative electrode evaporation formation negative electrode;
Make encapsulated barrier layer on the cathode, described encapsulated barrier layer is for comprising the barrier layer of multi-layer graphene film, or the barrier layer that multi-layer graphene film and organic substance film replace mutually.
2. method according to claim 1, is characterized in that, the step of described formation polymeric substrates, comprising:
Adopt the mode of slit coating or rotary coating, carrier forms polymeric substrates.
3. method according to claim 2, is characterized in that, described polymeric substrates is the one in PEN substrate, PI substrate, PES substrate, PEEK substrate.
4. method according to claim 2, is characterized in that, the thickness of the polymeric substrates that carrier is formed is 5-100 micron.
5. method according to claim 1, is characterized in that, described polymeric substrates makes the step of substrate barrier layer, at least comprises the process making graphene film;
Make the step of encapsulated barrier layer on the cathode, at least comprise making graphene film.
6. method according to claim 5, is characterized in that, the step of described making graphene film, comprising:
Oxidation-reduction method is adopted directly to prepare graphene film; Or
First adopt vapour deposition process deposited graphite alkene film on metal foil, then carry out chemistry or electrochemistry transfer.
7. method according to claim 6, is characterized in that, the thickness of described graphene film is 30 nanometers to 1 micron.
8. the method according to any one of claim 5 to 7, is characterized in that, described polymeric substrates makes the step of substrate barrier layer, also comprises the process making organic substance film;
Make the step of encapsulated barrier layer on the cathode, also comprise and make organic substance film.
9. method according to claim 8, is characterized in that, described organic substance film is the one in PCL film, PMMA film, HMDSO film.
10. method according to claim 8, is characterized in that, the number of plies of described graphene film and described organic substance film is 1 to 10 layer simultaneously.
11. 1 kinds of AMOLED devices, is characterized in that, described device comprises:
Polymeric substrates;
Be made in the substrate barrier layer on described polymeric substrates, described substrate barrier layer is the barrier layer comprising multi-layer graphene film, or the barrier layer that multi-layer graphene film and organic substance film replace mutually;
Be made in the thin film transistor (TFT) array on described substrate barrier layer and organic luminescence function material layer, described organic luminescence function material layer is provided with the negative electrode formed through negative electrode evaporation;
Be made in the encapsulated barrier layer on described negative electrode, described encapsulated barrier layer is for comprising the barrier layer of multi-layer graphene film, or the barrier layer that multi-layer graphene film and organic substance film replace mutually.
12. devices according to claim 11, is characterized in that, described polymeric substrates is the polymeric substrates adopting the mode of slit coating or rotary coating to be formed; Described polymeric substrates is the one in PEN substrate, PI substrate, PES substrate, PEEK substrate; The thickness of described polymeric substrates is 5-100 micron.
13. devices according to claim 11, is characterized in that, described substrate barrier layer is the barrier layer that multi-layer graphene film and organic substance film replace mutually;
Described encapsulated barrier layer is the barrier layer that multi-layer graphene film and organic substance film replace mutually;
The thickness of described graphene film is 30 nanometers to 1 micron;
Described organic substance film is the one in PCL film, PMMA film, HMDSO film;
The number of plies of described graphene film and described organic substance film is 1 to 10 layer simultaneously.
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Cited By (13)
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| CN104851905A (en) * | 2015-05-14 | 2015-08-19 | 信利（惠州）智能显示有限公司 | Integrated touch-control transparent AMOLED display device and preparation method thereof |
| CN104966790A (en) * | 2015-05-14 | 2015-10-07 | 信利（惠州）智能显示有限公司 | Method for producing integrated touch control AMOLED display device |
| CN106206982A (en) * | 2016-08-11 | 2016-12-07 | 上海大学 | A kind of structure improving flexible substrates water and oxygen barrier property and preparation method thereof |
| CN107046051A (en) * | 2017-04-19 | 2017-08-15 | 上海天马有机发光显示技术有限公司 | A kind of manufacture method of display panel, display device and display panel |
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| CN108832020A (en) * | 2018-06-25 | 2018-11-16 | 上海大学 | A kind of flexible substrate composite construction and the preparation method and application thereof |
| CN109494311A (en) * | 2018-11-16 | 2019-03-19 | 京东方科技集团股份有限公司 | Substrate and preparation method thereof, display panel |
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| CN110504384A (en) * | 2019-08-29 | 2019-11-26 | 京东方科技集团股份有限公司 | Organic electroluminescence device and display panel |
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| CN111244312A (en) * | 2020-01-19 | 2020-06-05 | 武汉天马微电子有限公司 | Display panel and manufacturing method thereof |
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