CN104345545A - Mask and production method thereof - Google Patents
Mask and production method thereof Download PDFInfo
- Publication number
- CN104345545A CN104345545A CN201310324010.6A CN201310324010A CN104345545A CN 104345545 A CN104345545 A CN 104345545A CN 201310324010 A CN201310324010 A CN 201310324010A CN 104345545 A CN104345545 A CN 104345545A
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- Prior art keywords
- phase shift
- shift layer
- mask plate
- light
- mask
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
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- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The invention discloses a mask and a production method thereof. The mask comprises a first phase shift layer, a body and a second phase shift layer; the first phase shift layer and the second phase shift layer are respectively positioned at two sides of the body, and the graph shape and position of the first phase shift layer and the second phase shift layer has error being less than or equal to 5%. Compared with the prior art, in the mask and the production method, the first phase shift layer and the second phase shift layer are respectively formed at two sides of the body, the first phase shift layer and the second phase shift layer are basically same, when an exposure process is carried out, light passing through the mask enables twice destructive interference, so that diffracted light influence can be greatly reduced, and exposure accuracy and development success rate are increased.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly a kind of mask plate and manufacture method thereof.
Background technology
In manufacture of semiconductor, in order to designed circuit conversion is become device, pattern must be formed on mask plate (mask), by photoetching process, it be formed on chip afterwards.For the design that some circuit diagrams are trickleer, the resolution on mask plate must be improved, thus make pattern to transfer on chip accurately, successive process can be facilitated to carry out smoothly.
As shown in Figure 1, described mask plate comprises main body 1 and shading light part 2, described main body 1 is such as that quartz makes, shading light part 2 is light tight, the then upper surface of mask plate described in directional light normal incidence, and from Tong Guangkou 21 through, due to the undulatory property of light, diffraction can be there is after through mask plate, form main crest 10 and secondary wave crest 11, secondary wave crest 11 between adjacent main crest 10 can superpose, carry out interfering long mutually, thus form secondary wave crest 12, discrepancy delta between described secondary wave crest 12 and main crest 10 1 characterizes the critical range (CD range) of critical size, because photoetching process is a photo-process, therefore, due to the superposition of light wave, light intensity below shading light part 2 also may reach photosensitive boundary, thus figure is formed on wafer, then produce harmful effect when developing.Therefore, wish that in the industry CD range can be comparatively large, also namely reduce diffraction light as much as possible to the impact of exposure process.
So, phase deviation mask plate (Phase Shift Mask, PSM) just arise at the historic moment, please refer to Fig. 2, described phase deviation mask plate comprises main body 1 and phase shift layer 3, described phase shift layer can make through light intensity weaken, and make its phase transition 180 °, then after light transmission phase shift layer 3 and logical light mouth 31, the light passed through at Tong Guangkou 31 carries out diffraction, produce secondary wave crest 14, and the light intensity after phase shift layer represents with secondary wave crest 13, because phase place is contrary, therefore can carry out interfering disappearing mutually, secondary wave crest 11 is formed after the two superposition, then between adjacent main peaks 10, superposition forms secondary wave crest 12, compare common mask plate, the CD range Δ 2 of phase deviation mask plate is greater than the CD range Δ 1 of common mask plate, therefore the interference be subject to when exposing will reduce, exposure degree of accuracy improves.
But along with the further increase of integrated level, reducing further of critical size, phase deviation mask plate also causes attention in the industry due to diffraction to the impact of exposure process, how to improve this problem further, improves exposure precision, will have great meaning.
Summary of the invention
The object of the present invention is to provide a kind of mask plate and manufacture method thereof, to alleviate the problem even avoiding diffraction light of the prior art to have an impact to exposure process.
For solving the problems of the technologies described above, the invention provides a kind of mask plate, comprising: the first phase shift layer, body and the second phase shift layer;
Wherein, described first phase shift layer and the second phase shift layer are respectively in the both sides of described body, and the shape of the figure of described first phase shift layer and the second phase shift layer and position have the error being less than or equal to 5%.
Optionally, for described mask plate, described first phase shift layer and the second phase shift layer have identical figure.
Optionally, for described mask plate, the material of described body is quartz.
Optionally, for described mask plate, described first phase shift layer is identical with the material of the second phase shift layer.
Optionally, for described mask plate, the material of described first phase shift layer and the second phase shift layer is molybdenum silicide.
The invention provides a kind of manufacture method of mask plate, comprising:
One body is provided;
Form the first phase shift layer in the side of described body, and carry out patterned process;
Reverse described body, forms the second phase shift layer at the opposite side of described body, and carry out patterned process;
Wherein, to the patterned process of described first phase shift layer and the second phase shift layer, there is in shape and position the error being less than or equal to 5%.
Optionally, for described mask plate manufacture method, described identical with the patterned process that the second phase shift layer carries out to the first phase shift layer.
Optionally, for described mask plate manufacture method, the material of described body is quartz, and the material of described first phase shift layer and the second phase shift layer is molybdenum silicide.
Optionally, for described mask plate manufacture method, before formation first phase shift layer, and before forming the second phase shift layer after forming the first phase shift layer, comprise respectively: clean described mask plate.
Compared with prior art, in mask plate provided by the invention and manufacture method thereof, the first phase shift layer and the second phase shift layer is formed respectively in the both sides of body, shape and the position of the figure of described first phase shift layer and the second phase shift layer have the error being less than or equal to 5%, so when carrying out exposure technology, light can carry out twice interference and disappear mutually after mask plate, thus greatly reduces the impact of diffraction light, improves the accuracy of exposure and develops to power.
Accompanying drawing explanation
Fig. 1 is the common mask plate schematic diagram of prior art;
Fig. 2 is the phase deviation mask plate schematic diagram of prior art;
Fig. 3 is the schematic diagram of the mask plate of the embodiment of the present invention;
Process schematic when Fig. 4-Fig. 5 is the mask plate of light by the embodiment of the present invention.
Embodiment
Below in conjunction with schematic diagram, mask plate of the present invention and manufacture method thereof are described in more detail, which show the preferred embodiments of the present invention, should be appreciated that those skilled in the art can revise the present invention described here, and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as limitation of the present invention.
In order to clear, whole features of practical embodiments are not described.They in the following description, are not described in detail known function and structure, because can make the present invention chaotic due to unnecessary details.Will be understood that in the exploitation of any practical embodiments, a large amount of implementation detail must be made to realize the specific objective of developer, such as, according to regarding system or the restriction about business, change into another embodiment by an embodiment.In addition, will be understood that this development may be complicated and time-consuming, but be only routine work to those skilled in the art.
In the following passage, more specifically the present invention is described by way of example with reference to accompanying drawing.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, the aid illustration embodiment of the present invention lucidly.
Core concept of the present invention is, a kind of mask plate and manufacture method thereof are provided, described mask plate forms the first phase shift layer and the second phase shift layer respectively in the both sides of body, described first phase shift layer has similar figure with the second phase shift layer, so when light transmission mask plate, priority twice interference can be carried out disappear mutually, thus greatly reduce the impact of diffraction light, improve the accuracy of exposure and develop to power.
Below in conjunction with the drawings and specific embodiments, mask plate provided by the invention and manufacture method thereof are described in further detail.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts the form simplified very much, only in order to object that is convenient, the aid illustration embodiment of the present invention lucidly.
First please refer to Fig. 3, the invention provides a kind of mask plate, comprising:
First phase shift layer 301, body 1 and the second phase shift layer 302; Wherein, described first phase shift layer 301 and the second phase shift layer 302 are respectively in the both sides of described body 1, and described first phase shift layer 301 has similar figure with the second phase shift layer 302, preferably, described first phase shift layer 301 and the second phase shift layer 302 have identical figure, namely, as shown in Figure 3, described first phase shift layer 301, through the translation downwards of described body 1, can overlap with described second phase shift layer 302 completely, thus can reach the effect of best reduction diffraction light impact.
The material that described body 1 can adopt existing mask plate usual, such as, be adopted as quartz in the present embodiment.Preferably, described first phase shift layer 301 is identical with the material of described second phase shift layer 302, thus can either reach good effect, and the difference that also can reduce due to material may cause various problems in the fabrication process, reduces manufacture difficulty.Because the effect of described phase shift layer 301,302 is to make light reduce transmitance in some region, and it can be made anti-phase, therefore preferably, the material of described first phase shift layer 301 and the second phase shift layer 302 is molybdenum silicide (MoSi).
Incorporated by reference to Fig. 3-Fig. 5, after light (such as directional light) exposes to described mask plate, when arriving in body 1, due to the existence of the first phase shift layer 301, the energy distribution of light as shown in Figure 4.Be analyzed as follows, at least there is main crest 10 and secondary wave crest 14' after the optical diffraction of logical light mouth 31, light after the first phase shift layer 301 slackens then at least has secondary wave crest 13', usually because phase shift layer can make light intensity weaken to about 6%, and there are 180 ° of variations in phase place, therefore secondary wave crest 11' is formed after superposition, then final for interfering mutually long superposition to become secondary wave crest 12' between adjacent two main crests 10.Light continues through the second phase shift layer 302 and logical light mouth 31 afterwards, expose on wafer, please refer to Fig. 5, light so representated by secondary wave crest 12' is weakened and anti-phase after the second phase shift layer 302, at least there is secondary wave crest 16, and still can carry out diffraction through the light of logical light mouth 31, but now the energy of its diffraction light reduces, now at least form secondary wave crest 15 after its superposition, interfere with secondary wave crest 16 and disappear mutually, obtain secondary wave crest 12, the CD range Δ 3 of the described mask plate in the present embodiment finally obtained will be larger than CD range Δ 2, namely diffraction light is less on impact during exposing wafer, thus improve the accuracy of exposure and develop to power.
Because the energy of light is normal distribution, thus the present invention depicts the impact that 0 grade and 1 order diffraction light produce, and the impact of other diffraction lights is negligible.
Because figure is in a photolithographic process various, be associated with the structure of designed circuit layout, therefore the present invention does not limit at this graphics shape to described first phase shift layer 301 and the second phase shift layer 302, insider, should according to required circuit diagram designed, designed layout (layout) when using of the present invention.And the thickness of described first phase shift layer 301 and the second phase shift layer 302 also should look different technological requirement, and the parameter etc. of exposure sources carry out comprehensive consideration after set, consider that by light intensity when the first phase shift layer 301 and the second phase shift layer 302 be different, therefore, the thickness of described first phase shift layer 301 and the second phase shift layer 302 also can be different.
It should be noted that, " similar " alleged in literary composition should be understood to figure and has difference slightly in lithographic dimensioned interior shape or position, this species diversity at least meets the luminous flux substantially not affecting logical light mouth 31 and pass through, and simply can not be interpreted as mitigation and amplification, such as, describedly similarly the shape of figure is preferably and position has the error being less than or equal to 5%.
For above-mentioned mask plate, the invention provides its manufacture method, comprising:
One body is provided, usually can adopts quartz, after the processes such as cleaning, the side of described body is formed the first phase shift layer, and carries out patterned process; Afterwards, clean described mask plate, and the described body that reverses, form the second phase shift layer at the opposite side of described body, carry out patterned process equally.With the second phase shift layer, there is similar figure in order to reach the first phase shift layer as above, preferably, same photoetching process is adopted to carry out, make, to the patterned process of described first phase shift layer and the second phase shift layer, there is in shape and position the error being less than or equal to 5%, to make the figure of described first phase shift layer and the second phase shift layer be more or less the same as far as possible, even identical.Same, after the second phase shift layer forming patterning, preferably once clean, to remove chemical substance in patterning process and reaction product, also conveniently carry out follow-up operation.The material of described first phase shift layer and the second phase shift layer can be molybdenum silicide, thus makes it possible to play weakening light intensity and the effect overturning phase place.
It should be noted that, the sequencing making described first phase shift layer and the second phase shift layer can be put upside down.But the pros and cons of mask plate after completing still can not be put upside down, therefore when using the light shield obtained according to the present invention, technician is needed carefully to be distinguished.
Compared with prior art, in mask plate provided by the invention and manufacture method thereof, the first phase shift layer and the second phase shift layer is formed respectively in the both sides of body, shape and the position of the figure of described first phase shift layer and the second phase shift layer have the error being less than or equal to 5%, so when carrying out exposure technology, light can carry out twice interference and disappear mutually after mask plate, thus greatly reduces the impact of diffraction light, improves the accuracy of exposure and develops to power.
Obviously, those skilled in the art can carry out various change and modification to invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (9)
1. a mask plate, comprising: the first phase shift layer, body and the second phase shift layer;
Wherein, described first phase shift layer and the second phase shift layer are respectively in the both sides of described body, and the shape of the figure of described first phase shift layer and the second phase shift layer and position have the error being less than or equal to 5%.
2. mask plate as claimed in claim 1, it is characterized in that, described first phase shift layer and the second phase shift layer have identical figure, and symmetrical relative to described body.
3. mask plate as claimed in claim 1, is characterized in that, the material of described body is quartz.
4. mask plate as claimed in claim 1, it is characterized in that, described first phase shift layer is identical with the material of the second phase shift layer.
5. mask plate as claimed in claim 4, it is characterized in that, the material of described first phase shift layer and the second phase shift layer is molybdenum silicide.
6. a manufacture method for mask plate, is characterized in that, comprising:
One body is provided;
Form the first phase shift layer in the side of described body, and carry out patterned process;
Reverse described body, forms the second phase shift layer at the opposite side of described body, and carry out patterned process;
Wherein, to the patterned process of described first phase shift layer and the second phase shift layer, there is in shape and position the error being less than or equal to 5%.
7. the manufacture method of mask plate as claimed in claim 6, is characterized in that, described identical with the patterned process that the second phase shift layer carries out to the first phase shift layer.
8. the manufacture method of mask plate as claimed in claim 6, is characterized in that, the material of described body is quartz, and the material of described first phase shift layer and the second phase shift layer is molybdenum silicide.
9. the manufacture method of mask plate as claimed in claim 6, is characterized in that, before formation first phase shift layer, and before forming the second phase shift layer after forming the first phase shift layer, comprises respectively: clean described mask plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310324010.6A CN104345545A (en) | 2013-07-29 | 2013-07-29 | Mask and production method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310324010.6A CN104345545A (en) | 2013-07-29 | 2013-07-29 | Mask and production method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104345545A true CN104345545A (en) | 2015-02-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310324010.6A Pending CN104345545A (en) | 2013-07-29 | 2013-07-29 | Mask and production method thereof |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH053146A (en) * | 1991-04-19 | 1993-01-08 | Hitachi Ltd | X-ray exposure method |
| US5397663A (en) * | 1992-08-31 | 1995-03-14 | Sony Corporation | Phase shift mask and method of manufacturing the same |
| JPH08202016A (en) * | 1995-01-20 | 1996-08-09 | Sony Corp | Halftone type phase shift mask and method for exposing resist |
| JPH09120155A (en) * | 1995-08-22 | 1997-05-06 | Toshiba Corp | Phase shift mask and aligner |
| CN1169546A (en) * | 1995-03-24 | 1998-01-07 | 现代电子产业株式会社 | Phase shift mask and method for fabricating same |
| CN1523639A (en) * | 2003-02-17 | 2004-08-25 | ���µ�����ҵ��ʽ���� | Photomask, pattern formation method using photomask and mask data creation method |
| US20050026050A1 (en) * | 2003-07-29 | 2005-02-03 | Sony Corporation | Exposure mask and mask pattern production method |
-
2013
- 2013-07-29 CN CN201310324010.6A patent/CN104345545A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH053146A (en) * | 1991-04-19 | 1993-01-08 | Hitachi Ltd | X-ray exposure method |
| US5397663A (en) * | 1992-08-31 | 1995-03-14 | Sony Corporation | Phase shift mask and method of manufacturing the same |
| JPH08202016A (en) * | 1995-01-20 | 1996-08-09 | Sony Corp | Halftone type phase shift mask and method for exposing resist |
| CN1169546A (en) * | 1995-03-24 | 1998-01-07 | 现代电子产业株式会社 | Phase shift mask and method for fabricating same |
| JPH09120155A (en) * | 1995-08-22 | 1997-05-06 | Toshiba Corp | Phase shift mask and aligner |
| CN1523639A (en) * | 2003-02-17 | 2004-08-25 | ���µ�����ҵ��ʽ���� | Photomask, pattern formation method using photomask and mask data creation method |
| US20050026050A1 (en) * | 2003-07-29 | 2005-02-03 | Sony Corporation | Exposure mask and mask pattern production method |
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Application publication date: 20150211 |