CN101126906A - Secondary exposure method using two photomasks in semiconductor production process - Google Patents
Secondary exposure method using two photomasks in semiconductor production process Download PDFInfo
- Publication number
- CN101126906A CN101126906A CNA2007101371738A CN200710137173A CN101126906A CN 101126906 A CN101126906 A CN 101126906A CN A2007101371738 A CNA2007101371738 A CN A2007101371738A CN 200710137173 A CN200710137173 A CN 200710137173A CN 101126906 A CN101126906 A CN 101126906A
- Authority
- CN
- China
- Prior art keywords
- photomask
- width
- exposing patterns
- light beam
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The utility model relates to a double exposure method utilizing two photo masks in the semiconductor manufacture craft, which is characterized in the steps that: (a) to supply a substrate with a surface; (b) to form the negative photosensitive material on the surface of the substrate; (c) to supply a first photo mask which is provided with a first pattern; (d) to enable a first exposure program to the negative photosensitive material utilizing a first beam by the first photo mask, (e) to supply a second photo mask with a second pattern, the whole texture of which is roughly the same as the whole texture of the first pattern: (f) to enable the second exposure program to the negative photosensitive material utilizing a second beam by the second photo mask, and as a result the yield loss from the damage of the negative photosensitive material is not occurred.
Description
Technical field
The present invention relates to a kind of method of re-expose, specifically, relate to the re-expose method of utilizing two photomasks in a kind of semiconductor fabrication process.
Background technology
Referring to figs. 1 to Fig. 4, show the synoptic diagram of the exposure imaging manufacturing process of wafer in the existing semiconductor fabrication process.At first, with reference to figure 1, provide wafer 10, this wafer 10 has a surface 101 and an a plurality of pad 11, and these pads 11 are positioned on this surface 101.Then, with reference to figure 2, the formation polyimide (Polyimide, PI) passivation layer (Passivation layer) 12 is on this surface 101 of this wafer 10, and this polyimide passivation layer 12 is a kind of negative photosensitive material.
Then, with reference to figure 3, provide photomask 14, wherein this photomask 14 has pattern 141 and non-exposing patterns 142.These non-exposing patterns 142 relative these pads 11 are in order to expose these pads 11 after the manufacturing process that continues.Under normal conditions, may have redundant impurities or particle (Particle) 143 on this photomask 14, this particle 143 is arranged in this pattern 141.Then, utilize light beam 16 by 14 pairs of these polyimide passivation layer 12 of this photomask (Exposure) program of exposing, this light beam 16 passes this pattern 141 and makes corresponding this polyimide passivation layer 12 produce chemical reactions thereby can not be removed when developing.Yet,, therefore make and formerly should be understood some by the zone of these light beam 16 irradiations and do not shone, and can't produce chemical reaction by this light beam 16 because this particle 143 has the effect that stops this light beam 16.
Then, with reference to figure 4, after removing this photomask 14, utilize developer to this polyimide passivation layer 12 (Develop) program of developing, the zone that is shone by this light beam 16 can not washed off by this developer, the zone that is shone by this light beam 16 then can remain because of producing chemical reaction, thereby only exposes these pads 11, to carry out follow-up manufacturing process.But, in Fig. 4, can find out, because stopping of this particle 143 makes some this polyimide passivation layer 12 can't produce chemical reaction, therefore can be washed off by this developer equally, cause the breakage of this polyimide passivation layer 12, and expose this surface 101 of this wafer 10 outside the expection, so will cause the loss of yield rate.
Therefore, be necessary to provide the method for re-expose in the semiconductor fabrication process of a kind of innovation and tool progressive, to address the above problem.
Summary of the invention
The object of the present invention is to provide the method for re-expose in a kind of semiconductor fabrication process, may further comprise the steps:
(a) provide substrate, this substrate has a surface;
(b) form negative photosensitive material on this surface of this substrate;
(c) provide first photomask, this first photomask has first pattern;
(d) utilize first light beam this negative photosensitive material to be carried out the exposure program first time by this first photomask;
(e) provide second photomask, this second photomask has second pattern, and this second whole pattern lines is same as this first whole pattern lines; And
(f) utilize second light beam this negative photosensitive material to be carried out the exposure program second time by this second photomask.
Thus, this negative photosensitive material can not produce breakage and cause the problem of yield rate loss.
Description of drawings
Fig. 1 to Fig. 4 shows the synoptic diagram of the exposure imaging manufacturing process of wafer in the existing semiconductor fabrication process;
Fig. 5 to Fig. 9 shows the synoptic diagram of the exposure imaging manufacturing process of wafer in the semiconductor fabrication process of the present invention;
Figure 10 to 12 shows that the present invention uses two photomasks with identical patterns to carry out the error synoptic diagram of re-expose, and wherein the width of this first non-exposing patterns equals the width of this second non-exposing patterns;
Figure 13 to 15 shows that the present invention uses two photomasks with identical patterns to carry out the error synoptic diagram of re-expose, and wherein the width of this first non-exposing patterns is greater than the width of this second non-exposing patterns; And
Figure 16 to 18 shows that the present invention uses two photomasks with identical patterns to carry out the error synoptic diagram of re-expose, and wherein the width of this first non-exposing patterns is less than the width of this second non-exposing patterns.
The simple symbol explanation
10 wafers
11 pads
12 polyimide passivation layer
14 photomasks
16 light beams
20 wafers
21 pads
22 polyimide passivation layer
24 first photomasks
26 first light beams
28 second photomasks
30 second light beams
The surface of 101 wafers
141 patterns
142 non-exposing patterns
143 particles
The surface of 201 wafers
221 perforates
241 first patterns
242 first non-exposing patterns
243 first particles
281 second patterns
282 second non-exposing patterns
283 second particles
Embodiment
To Fig. 9, show the synoptic diagram of the exposure imaging manufacturing process of wafer in the semiconductor fabrication process of the present invention with reference to figure 5.At first, with reference to figure 5, provide substrate (for example wafer 20), this wafer 20 has a surface 201 and an a plurality of pad 21, and these pads 21 are positioned on this surface 201.With reference to figure 6, (for example polyimide (Polyimide, PI) passivation layer (Passivation layer) 22) is on this surface 101 of this wafer 10 to form negative photosensitive material.
With reference to figure 7, first photomask 24 is provided, wherein this first photomask 24 has first pattern 241 and the first non-exposing patterns 242.The zone (for example these pads 21) that this first non-exposing patterns 242 is desired to expose relatively, the zone (for example these pads 21) of desiring to expose in order to after the manufacturing process that continues, to expose.Under normal conditions, may have redundant impurities or particle (for example first particle 243) on this first photomask 24, this first particle 243 is arranged in this first pattern 241.Then, utilize first light beam 26 to carry out the exposure program first time by 24 pairs of these polyimide passivation layer 22 of this first photomask, this first light beam 26 passes this first pattern 241 and makes corresponding this polyimide passivation layer 22 produce chemical reactions thereby can not be removed when developing.Yet,, therefore make and formerly should be understood some by the zone of these first light beam, 26 irradiations and do not shone, and can't produce chemical reaction by this first light beam 26 because this first particle 243 has the effect that stops this first light beam 26.
With reference to figure 8, second photomask 28 is provided, wherein this second photomask 28 has second pattern 281 and the second non-exposing patterns 282.The whole lines of this second pattern 281 is same as the whole lines of this first pattern 241.Under normal conditions, also may have redundant impurities or particle (for example second particle 283) on this second photomask 28, this second particle 283 is arranged in this second pattern 281.Be understandable that this second particle 283 may be positioned on the same relative position hardly with this first particle 243.
Utilize second light beam 30 to carry out the exposure program second time by 24 pairs of these polyimide passivation layer 22 of this second photomask, this second light beam 30 passes this second pattern 281 and makes corresponding this polyimide passivation layer 22 produce chemical reactions thereby can not be removed when developing.In the current exposure program, because the relative position place of this first particle 243 exists without any particle, therefore the zone that was originally stopped by this first particle 243 and do not produce this polyimide passivation layer 22 of chemical reaction can be produced chemical reaction by these second light beam, 30 irradiations in the current exposure program.In addition, the zone that this second particle 283 stopped and produce chemical reaction in the first time in the exposure program already.
With reference to figure 9, after removing this second photomask 28, utilize developer that this polyimide passivation layer 22 is carried out developing programs, through behind the above-mentioned twice exposure program, the zone that is shone by this first light beam 26 or second light beam 30 can remain because of producing chemical reaction, thereby form a plurality of perforates 221, and only expose these pads 21, carrying out follow-up manufacturing process, and can not produce as the damaged of this polyimide passivation layer 12 (Fig. 4) in the existing manufacturing process and the loss that causes yield rate.
Be noted that, use two photomasks to carry out re-expose in the present invention with identical patterns, therefore when contraposition, machine error or personal error may be arranged, cause these perforates 221 of this polyimide passivation layer 22 not align or have position deviation with these pads 21.With reference to figures 10 to 12, show that the present invention uses two photomasks with identical patterns to carry out the error synoptic diagram of re-expose, wherein the width of this first non-exposing patterns equals the width of this second non-exposing patterns.With reference to Figure 10, the width W of this first non-exposing patterns 242 of this first photomask 24
1Be 60 μ m (identical), then, utilize this first light beam 26 to carry out the exposure program first time by 24 pairs of these polyimide passivation layer 22 of this first photomask with the horizontal width of this pad 21.Afterwards, remove this first photomask 24 and this second photomask 28 is provided.
With reference to Figure 11, the width W of this second non-exposing patterns 282 of this second photomask 28
2Be 60 μ m, then, utilize this second light beam 30 to carry out the exposure program second time by 28 pairs of these polyimide passivation layer 22 of this second photomask, wherein the position of this second photomask 28 and 24 of this first photomasks have the skew (shift) of 2 μ m.With reference to Figure 12, utilize developer that this polyimide passivation layer 22 is carried out developing programs, through behind the above-mentioned two road exposure programs, the zone that is shone by this first light beam 26 or second light beam 30 can remain, thereby form a plurality of perforates 221, the width W of each perforate 221
3Be 58 μ m,, that is cause last opening 221 width less than required width less than the horizontal width of this this pad 21.
In order to improve above-mentioned shortcoming, when the pattern of design photomask, can utilize following dual mode to improve.First kind of mode be, the width of the second non-exposing patterns 282 of this second photomask 28 is actual required width, and the width of the first non-exposing patterns 242 of this first photomask 24 is designed to greater than these second non-exposing patterns 282 width 2 μ m to 4 μ m; The second way is, the width of the first non-exposing patterns 242 of this first photomask 24 is actual required width, and second non-exposing patterns 282 width of this second photomask 28 are designed to pattern width 2 μ m to 4 μ m greater than this first non-exposing patterns 242.
With reference to figures 13 to 15, show that the present invention uses two photomasks with identical patterns to carry out the error synoptic diagram of re-expose, wherein the width of this first non-exposing patterns is greater than the width of this second non-exposing patterns, first kind of just above-mentioned mode.With reference to Figure 13, the width W of this first non-exposing patterns 242 of this first photomask 24
1Be 64 μ m (greater than the horizontal widths of this pad 21), then, utilize this first light beam 26 to carry out the exposure program first time by 24 pairs of these polyimide passivation layer 22 of this first photomask.Afterwards, remove this first photomask 24 and this second photomask 28 is provided.
With reference to Figure 14, the width W of this second non-exposing patterns 282 of this second photomask 28
2Be 60 μ m, then, utilize this second light beam 30 to carry out the exposure program second time by 28 pairs of these polyimide passivation layer 22 of this second photomask, wherein the position of this second photomask 28 and 24 of this first photomasks have the skew (shift) of 2 μ m.With reference to Figure 15, utilize developer that this polyimide passivation layer 22 is carried out developing programs, through behind the above-mentioned twice exposure program, the zone that is shone by this first light beam 26 or second light beam 30 can remain, thereby form a plurality of perforates 221, the width W of each perforate 221
3Be 60 μ m, equal the horizontal width of this pad 21.
Referring to figures 16 to 18, show that the present invention uses two photomasks with identical patterns to carry out the error synoptic diagram of re-expose, wherein the width of this first non-exposing patterns is less than the width of this second non-exposing patterns, the just above-mentioned second way.With reference to Figure 16, the width W of this first non-exposing patterns 242 of this first photomask 24
1Be 60 μ m (equaling the horizontal width of this pad 21), then, utilize this first light beam 26 to carry out the exposure program first time by 24 pairs of these polyimide passivation layer 22 of this first photomask.Afterwards, remove this first photomask 24 and this second photomask 28 is provided.
With reference to Figure 17, the width W of this second non-exposing patterns 282 of this second photomask 28
2Be 64 μ m, then, utilize this second light beam 30 to carry out the exposure program second time by 28 pairs of these polyimide passivation layer 22 of this second photomask, wherein the position of this second photomask 28 and 24 of this first photomasks have the skew (shift) of 2 μ m.With reference to Figure 18, utilize developer that this polyimide passivation layer 22 is carried out developing programs, through behind the above-mentioned two road exposure programs, the zone that is shone by this first light beam 26 or second light beam 30 can remain, thereby form a plurality of perforates 221, the width W of each perforate 221
3Be 60 μ m, equal the horizontal width of this pad 21.
The foregoing description only is explanation principle of the present invention and effect thereof, but not in order to restriction the present invention.Therefore, those skilled in the art can make amendment to the foregoing description without prejudice to spirit of the present invention and change.Interest field of the present invention should be listed as claims.
Claims (6)
1. utilize the re-expose method of two photomasks in the semiconductor fabrication process, may further comprise the steps:
(a) provide substrate, this substrate has a surface;
(b) form negative photosensitive material on this surface of this substrate;
(c) provide first photomask, this first photomask has first pattern;
(d) utilize first light beam this negative photosensitive material to be carried out the exposure program first time by this first photomask;
(e) provide second photomask, this second photomask has second pattern, and this second whole pattern lines is same as this first whole pattern lines haply; And
(f) utilize second light beam this negative photosensitive material to be carried out the exposure program second time by this second photomask.
2. the method for claim 1, wherein this substrate is a wafer, and it has a plurality of pads.
3. the method for claim 1, wherein this negative photosensitive material is a polyimide.
4. the method for claim 1, wherein this first photomask also has the first non-exposing patterns, and this second photomask also has the second non-exposing patterns, and the width of this first non-exposing patterns is greater than the width of this second non-exposing patterns.
5. the method for claim 1, wherein this first photomask also has the first non-exposing patterns, and this second photomask also has the second non-exposing patterns, and the width of this second non-exposing patterns is greater than the width of this first non-exposing patterns.
6. the method for claim 1, wherein this step (d) also comprises the step of carrying out developing programs afterwards.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007101371738A CN100538529C (en) | 2007-07-30 | 2007-07-30 | Utilize the re-expose method of two photomasks in the semiconductor fabrication process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007101371738A CN100538529C (en) | 2007-07-30 | 2007-07-30 | Utilize the re-expose method of two photomasks in the semiconductor fabrication process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101126906A true CN101126906A (en) | 2008-02-20 |
| CN100538529C CN100538529C (en) | 2009-09-09 |
Family
ID=39094966
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2007101371738A Active CN100538529C (en) | 2007-07-30 | 2007-07-30 | Utilize the re-expose method of two photomasks in the semiconductor fabrication process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100538529C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104752169A (en) * | 2013-12-30 | 2015-07-01 | 中芯国际集成电路制造(上海)有限公司 | Method for forming mask patterns |
| CN112305860A (en) * | 2019-08-02 | 2021-02-02 | 东莞新科技术研究开发有限公司 | Exposure development method for semiconductor |
-
2007
- 2007-07-30 CN CNB2007101371738A patent/CN100538529C/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104752169A (en) * | 2013-12-30 | 2015-07-01 | 中芯国际集成电路制造(上海)有限公司 | Method for forming mask patterns |
| CN104752169B (en) * | 2013-12-30 | 2018-12-21 | 中芯国际集成电路制造(上海)有限公司 | The forming method of mask pattern |
| CN112305860A (en) * | 2019-08-02 | 2021-02-02 | 东莞新科技术研究开发有限公司 | Exposure development method for semiconductor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100538529C (en) | 2009-09-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106468853B (en) | OPC for perceiving surroundings | |
| JP4792096B2 (en) | A template pattern design method, a template manufacturing method, and a semiconductor device manufacturing method. | |
| US20090130601A1 (en) | Method for fabricating semiconductor device | |
| CN101192007B (en) | Mask plate, mask plate layout design method and defect repairing method | |
| CN101211108B (en) | Method for repairing bridge in photo mask | |
| CN103186030A (en) | Optical proximity correction method | |
| US8735050B2 (en) | Integrated circuits and methods for fabricating integrated circuits using double patterning processes | |
| US20150198887A1 (en) | Multiple-Patterning Photolithographic Mask and Method | |
| CN107490932B (en) | Method for correcting mask graph | |
| CN101908470B (en) | Method and system for forming patterns in semiconductor device and semiconductor device | |
| CN100538529C (en) | Utilize the re-expose method of two photomasks in the semiconductor fabrication process | |
| CN101989039B (en) | Method for fabricating photomask | |
| US20060222963A1 (en) | Methods of forming patterns in substrates | |
| JP4858146B2 (en) | Photomask and transfer method | |
| US9632438B2 (en) | Phase shift mask and method of forming patterns using the same | |
| US7348106B2 (en) | Method for repairing a phase shift mask | |
| US20080044774A1 (en) | Method for exposing twice by two masks in semiconductor process | |
| KR101145032B1 (en) | Photomask and method for fabricating photomask | |
| JP2008294352A (en) | Exposure method and photomask for exposure | |
| US7727683B2 (en) | High-transmission attenuating PSM | |
| US20030180629A1 (en) | Masks and method for contact hole exposure | |
| US6759328B2 (en) | Masks and method for contact hole exposure | |
| US7141337B2 (en) | Phase shift mask | |
| CN101620375B (en) | Method for correcting lug photomask pattern | |
| CN101359178B (en) | Optical proximity correction method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |