CN104333341A - 300DEG C resistant peeling method of SAW (surface acoustic wave) devices - Google Patents
300DEG C resistant peeling method of SAW (surface acoustic wave) devices Download PDFInfo
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- CN104333341A CN104333341A CN201410647515.0A CN201410647515A CN104333341A CN 104333341 A CN104333341 A CN 104333341A CN 201410647515 A CN201410647515 A CN 201410647515A CN 104333341 A CN104333341 A CN 104333341A
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Abstract
The invention discloses a 300DEG C resistant peeling method of SAW (surface acoustic wave) devices. The 300DEG C resistant peeling method includes steps of 1) manufacturing a metal chip on a substrate; 2) laying a dry film on the metal surface of the substrate; 3) aligning and exposing a lead bonding area of the metal chip; 4) developing the dry film; 5) manufacturing a SiO2 temperature compensation layer on the surface of the substrate with the dry film on the surface of the lead bonding area and annealing in situ; 6) peeling in NMP (N-methyl pyrrolidone) solvent, and removing the dry film in the lead bonding area and the SiO2 temperature compensation layer on the surface of the dry film in the lead bonding area. The 300DEG C resistant peeling method can be used for production and processing at the high temperature, and stability of the SAW devices is improved.
Description
Technical field
The present invention relates to SAW (Surface Acoustic Wave) device processing technique field, particularly relate to the anti-300 DEG C of high temperature stripping meanss of a kind of SAW (Surface Acoustic Wave) device.
Background technology
Surface acoustic wave (SAW) device is widely used in various types of communication, in the communications applications in future, for adapting to various harsher external environment, in the urgent need to improving the job stability of SAW (Surface Acoustic Wave) device.Temperature is one of important parameter affecting SAW (Surface Acoustic Wave) device job stability.See Fig. 1, existing SAW (Surface Acoustic Wave) device comprises the interdigital district 3 of substrate 1, metal chip 2 and metal; In the manufacturing process of SAW device, device is once encapsulate complete, and its state just determines.But along with the change of ambient temperature, many parameters of SAW (Surface Acoustic Wave) device, as the thickness of interdigital and substrate, width and coefficient of elasticity etc. all will change thereupon.Therefore velocity of wave, the frequency of SAW also can drift about.The change of simultaneous temperature also can produce thermal stress, the service behaviour of deterioration of device.Such as, the SAW device (TCF=-75ppm/ DEG C) that 128 YX lithium niobates make, under the centre frequency of 1GHz, when working temperature changes to 85 DEG C from-55 DEG C, frequency has the drift of 10.5MHz.Therefore in temperature changing process, how to ensure that SAW device has good stability, become the subject matter improving its service behaviour, many experts and scholars are to this has been various exploration and research.
In order to meet better temperature stability, need to make thick SiO on the SAW device surface of routine
2temperature compensating layer.Because needs expose window can carry out wire bonding in wirebonding region, expose window part and alignment process with photoresist can be made to complete, peel off the thick SiO of this window simultaneously at follow-up use stripping technology
2temperature compensating layer.But at the thick SiO of making
2need the in-situ annealing of carrying out 300 DEG C during temperature compensating layer, and carbonization can occur 200 DEG C time common photoresist, loses the stripping function of photoresist, this just constrains the stripping technology development of in-situ annealing.
Summary of the invention
For prior art above shortcomings, the object of the invention is to the problem how solving existing SAW (Surface Acoustic Wave) device poor high temperature stability, a kind of SAW (Surface Acoustic Wave) device is provided to resist 300 DEG C of high temperature stripping meanss, production and processing can be carried out in high temperature environments, thus improve the stability of SAW (Surface Acoustic Wave) device.
In order to solve the problems of the technologies described above, the technical solution used in the present invention is such: a kind of SAW (Surface Acoustic Wave) device resists 300 DEG C of high temperature stripping meanss, it is characterized in that: comprise the steps:
1) in the device side of substrate, make the metal chip of SAW (Surface Acoustic Wave) device;
2) when being warmed to 120 DEG C, being pressurized to 500PSI and vacuumizing, the metal covering of substrate sticks one deck dry film, and excise the dry film of substrate edge;
3) on exposure machine, use the wire bonding district of mask plate to metal chip to carry out alignment exposure, its exposure is 50-300mj/cm
2;
4) be the NaCO of 1% at percentage by weight
3develop to dry film in solvent, developing time is 100-300s;
5) in coating machine, having the substrate surface of dry film to make thickness to surface, wire bonding district is the SiO of 50-3000nm
2temperature compensating layer, carries out in-situ annealing 2 hours simultaneously under 300 DEG C of conditions;
6) last in nmp solvent, temperature be 90 DEG C, pressure peels off under being the environment of 1000PSI, removes the SiO2 temperature compensating layer on the dry film in wire bonding district and this part dry film surface.
Further, described substrate adopts monocrystalline lithium tantalate or lithium niobate monocrystal piezoelectric substrate.
Further, described dry film adopts HP3610 type dry film.
Compared with prior art, tool of the present invention has the following advantages:
1. can resist the dry film of 300 DEG C of high temperature, the not developer solution of secondary corroding metal aluminium.
2. have that photoresist is easy to be removed than use dry etching, wire bonding district without SiO2 temperature compensating layer residual or wire bonding district metallic aluminium not by advantages such as overetch.
3. can improve the temperature performance stability of SAW (Surface Acoustic Wave) device.
Accompanying drawing explanation
Fig. 1 is SAW (Surface Acoustic Wave) device cross-sectional view in prior art.
Fig. 2 is SAW (Surface Acoustic Wave) device cross-sectional view in the present invention.
Fig. 3 is the schematic diagram make metal chip on substrate after.
Fig. 4 is the schematic diagram after pasting dry film.
Fig. 5 is the schematic diagram in exposure process.
Fig. 6 is the schematic diagram after development.
Fig. 7 is plating SiO
2temperature compensating layer schematic diagram after in-situ annealing.
Fig. 8 is the schematic diagram after peeling off.
Fig. 9 is the SAW device filter frequency figure at different temperatures of the high-temperature stability adopting the present invention to make
Figure 10 is the SAW device frequency-temperature coefficient figure of the high-temperature stability adopting the present invention to make.
In figure in 2-Fig. 8: 1-substrate, 2-metal chip, the interdigital district of 3-metal, 4-SiO2 temperature compensating layer, 5-wire bonding district, 6-dry film, 7-mask plate, 8-ultraviolet light.
Embodiment
Below in conjunction with drawings and Examples, the invention will be further described.
Embodiment: participate in Fig. 2, a kind of SAW (Surface Acoustic Wave) device resists 300 DEG C of high temperature stripping meanss, comprises the steps:
1) see Fig. 3, the device side of substrate 1 makes the metal chip 2 of SAW (Surface Acoustic Wave) device; This metal chip 2 comprises the interdigital district 3 of metal and wire bonding district 5.Described substrate 1 adopts monocrystalline lithium tantalate or lithium niobate monocrystal piezoelectric substrate 1.
2) see Fig. 4, when being warmed to 120 DEG C, being pressurized to 500PSI and vacuumizing, the metal covering of substrate 1 sticks one deck dry film 6, and excise the dry film 6 at substrate 1 edge; Described dry film 6 adopts HP3610 type dry film 6.To ensure that dry film 6 entirety to be positioned on substrate 1 and to be positioned at inside substrate 1 edge.
3) see Fig. 5, exposure machine uses the wire bonding district 5 of mask plate 7 pairs of metal chip 2 carry out alignment exposure, its exposure is 50-300mj/cm
2; Because dry film 6 pairs of ultraviolet lights 8 are photosensitive, therefore this exposure machine adopts ultraviolet source, thus is exposed by ultraviolet light 8 pairs of wire bonding districts 5.
4) see Fig. 6, be the NaCO of 1% at percentage by weight
3develop to dry film 6 in solvent, developing time is 100-300s.
5) see Fig. 7, in coating machine, have the substrate 1 of dry film 6 one side to make thickness to surface, wire bonding district 5 is the SiO of 50-3000nm
2temperature compensating layer 4, carries out in-situ annealing 2 hours simultaneously under 300 DEG C of conditions;
6) see Fig. 8, finally in nmp solvent (1-METHYLPYRROLIDONE), temperature be 90 DEG C, pressure peels off under being the environment of 1000PSI, removes the SiO2 temperature compensating layer 4 on the dry film 6 in wire bonding district 5 and this part dry film 6 surface.
See Fig. 9, the SAW device filter frequency figure at different temperatures of the high-temperature stability that the present invention makes, see Figure 10, the SAW device frequency-temperature coefficient figure of the high-temperature stability made for adopting the present invention; As can be seen from Fig. 9, Figure 10, the temperature drift of SAW device reduces greatly.
Finally it should be noted that, above embodiment is only in order to illustrate technical scheme of the present invention but not restriction technologies scheme, those of ordinary skill in the art is to be understood that, those are modified to technical scheme of the present invention or equivalent replacement, and do not depart from aim and the scope of the technical program, all should be encompassed in the middle of right of the present invention.
Claims (3)
1. the anti-300 DEG C of high temperature stripping meanss of SAW (Surface Acoustic Wave) device, is characterized in that: comprise the steps:
1) in the device side of substrate, make the metal chip of SAW (Surface Acoustic Wave) device;
2) when being warmed to 120 DEG C, being pressurized to 500PSI and vacuumizing, the metal covering of substrate sticks one deck dry film, and excise the dry film of substrate edge;
3) on exposure machine, use the wire bonding district of mask plate to metal chip to carry out alignment exposure, its exposure is 50-300mj/cm
2;
4) be the NaCO of 1% at percentage by weight
3develop to dry film in solvent, developing time is 100-300s;
5) in coating machine, having the substrate surface of dry film to make thickness to surface, wire bonding district is the SiO of 50-3000nm
2temperature compensating layer, carries out in-situ annealing 2 hours simultaneously under 300 DEG C of conditions;
6) last in nmp solvent, temperature be 90 DEG C, pressure peels off under being the environment of 1000PSI, removes the SiO2 temperature compensating layer on the dry film in wire bonding district and this part dry film surface.
2. the anti-300 DEG C of high temperature stripping meanss of SAW (Surface Acoustic Wave) device according to claim 1, is characterized in that: described substrate adopts monocrystalline lithium tantalate or lithium niobate monocrystal piezoelectric substrate.
3. the anti-300 DEG C of high temperature stripping meanss of SAW (Surface Acoustic Wave) device according to claim 1, is characterized in that: described dry film adopts HP3610 type dry film.
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| CN201410647515.0A CN104333341B (en) | 2014-11-14 | 2014-11-14 | SAW device resists 300 DEG C of high temperature stripping means |
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| CN104333341A true CN104333341A (en) | 2015-02-04 |
| CN104333341B CN104333341B (en) | 2018-01-09 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109309483A (en) * | 2018-10-10 | 2019-02-05 | 华南理工大学 | A kind of preparation method of support type thin film bulk acoustic wave resonator |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1488191A (en) * | 2001-01-25 | 2004-04-07 | 株式会社东芝 | Method for manufacturing surface acoustic wave device and inspecting instrument |
| CN101379700A (en) * | 2006-02-16 | 2009-03-04 | 松下电器产业株式会社 | Surface acoustic wave device, surface acoustic wave filter employing same and antenna duplexer, and electronic apparatus employing same |
| CN102208906A (en) * | 2010-03-30 | 2011-10-05 | 新科实业有限公司 | Surface acoustic wave device |
| CN103852971A (en) * | 2012-12-04 | 2014-06-11 | 劳恩创新科技有限公司 | Transparent member having an image and method for forming the image on the transparent member |
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2014
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1488191A (en) * | 2001-01-25 | 2004-04-07 | 株式会社东芝 | Method for manufacturing surface acoustic wave device and inspecting instrument |
| CN101379700A (en) * | 2006-02-16 | 2009-03-04 | 松下电器产业株式会社 | Surface acoustic wave device, surface acoustic wave filter employing same and antenna duplexer, and electronic apparatus employing same |
| CN102208906A (en) * | 2010-03-30 | 2011-10-05 | 新科实业有限公司 | Surface acoustic wave device |
| CN103852971A (en) * | 2012-12-04 | 2014-06-11 | 劳恩创新科技有限公司 | Transparent member having an image and method for forming the image on the transparent member |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109309483A (en) * | 2018-10-10 | 2019-02-05 | 华南理工大学 | A kind of preparation method of support type thin film bulk acoustic wave resonator |
| CN109309483B (en) * | 2018-10-10 | 2022-03-25 | 华南理工大学 | Preparation method of support type film bulk acoustic resonator |
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| CN104333341B (en) | 2018-01-09 |
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Effective date of registration: 20220602 Address after: No.23 Xiyong Avenue, Shapingba District, Chongqing 401332 Patentee after: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION CHONGQING ACOUSTIC-OPTIC-ELECTRONIC CO.,LTD. Address before: 400060 Chongqing Nanping Nan'an District No. 14 Huayuan Road Patentee before: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION NO.26 Research Institute |
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