CN101192818A - Sound surface wave sensor chip and its making method - Google Patents
Sound surface wave sensor chip and its making method Download PDFInfo
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- CN101192818A CN101192818A CNA2006101443286A CN200610144328A CN101192818A CN 101192818 A CN101192818 A CN 101192818A CN A2006101443286 A CNA2006101443286 A CN A2006101443286A CN 200610144328 A CN200610144328 A CN 200610144328A CN 101192818 A CN101192818 A CN 101192818A
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Abstract
The invention discloses a surface acoustic wave sensor chip and a manufacturing method thereof. The invention comprises a piezoelectric substrate which is provided with an Au layer. The chip comprises an interdigital transducer and a film forming area, among which, the interdigital transducer portion is provided with a film forming masking layer, and the Au layer of the film forming area is provided with a sensitive film. The sensitive film is a polymer film which can adsorb and desorb specific gas. When a chip is made, the film forming masking layer is first covered on the non film forming area, and before a chemical sensitive film is formed on the film forming area, the non film forming area is masked with the film forming masking layer. The invention can well solve the problems of loose masking, bad consistency, chip contamination during the sensitive film forming process. Furthermore, the process is simple, efficient, stable and reliable, and the influence to the electrical property of the chip is little.
Description
Technical field
The present invention relates to a kind of chip manufacturing technology, relate in particular to a kind of sound surface wave sensor chip and preparation method thereof.
Background technology
In recent years, because the demand of anti-terrorism and chemical defence, the development of gas sensor becomes focus, especially after absorbing gas according to the macromolecule gas sensitive, the development of SAW (surface acoustic wave) gas sensor that the principle that sound wave changes in material surface propagation velocity or frequency is made with use more outstanding.
The core component of SAW gas sensor is the SAW sensor chip that is used for gas detecting, in the preparation process of SAW sensor chip, there are technological difficulties, that be exactly how that the chemical-sensitive film is reliable and stable, transfer to the film forming district of chip exactly, do not influence other parts of chip simultaneously.
A variety of thin film-forming methods are arranged at present, a kind of is to adopt laser positioning spraying growth chemical-sensitive film method, this method does not need non-one-tenth diaphragm area is sheltered, have the growth of being easy to, control accurately, process characteristics such as high conformity, but required film-forming apparatus is very expensive.
Another kind is that molecule is self-assembled into film method, this method is soaked chip in film forming solution for a long time, just need shelter non-one-tenth diaphragm area this moment, only expose into diaphragm area, the past often utilizes special adhesive tape to shelter, but tape edge is understood perk even come off, the infiltration of generation solution, pollute non-one-tenth diaphragm area, adhesive tape also can pollute chip surface simultaneously, is difficult to remove.Also have and adopt paraffin to shelter, but troublesome poeration, poor reliability when removing paraffin, also pollute chip surface simultaneously unavoidably, influence sensor performance.Above masking efficient is all very low, is unsuitable for the batch process of chip.
Summary of the invention
The purpose of this invention is to provide a kind of sound surface wave sensor chip and preparation method thereof, this method is simple to operate, reliability is high, efficient is high.
The objective of the invention is to be achieved through the following technical solutions:
Sound surface wave sensor chip of the present invention comprises piezoelectric substrate, and described piezoelectric substrate is provided with golden Au layer;
Described chip comprises interdigital transducer and film forming district;
The Au layer at described interdigital transducer position is provided with the film forming masking layer;
The Au floor in described film forming district is provided with sensitive membrane, and described sensitive membrane is for having the polymer film that adsorption property is conciliate in absorption to specific gas.
Be provided with chromium Cr transition zone between described piezoelectric substrate and the Au layer.
Described piezoelectric substrate comprises various tangential following at least a crystal:
Quartz crystal, lithium columbate crystal, lithium tantalate, callium-lanthanum silicate crystal, lithium tetraborate crystal.
The thickness of described Au layer is 400～550 dusts;
The thickness of described Cr transition zone is 5～15 dusts;
The thickness of described film forming masking layer is 100～300 dusts.
The manufacture method of above-mentioned sound surface wave sensor chip of the present invention may further comprise the steps:
A, on piezoelectric substrate evaporation Au layer;
B, the Au floor is carved interdigital transducer and film forming district;
C, on the Au layer evaporation film-forming masking layer;
D, the film forming masking layer in film forming district is peeled off, formed sensitive membrane then in the film forming district.
In the described steps A, before evaporation Au layer on the piezoelectric substrate, at first evaporation Cr transition zone on piezoelectric substrate, evaporation Au layer on the Cr transition zone then.
Described step B comprises,
B1, on the Au layer, apply photoresist, and the method by photoetching, the figure in interdigital transducer and film forming district is carved on the photoresist layer;
B2, the method by etching are carved into the figure in interdigital transducer on the photoresist layer and film forming district on the Au floor, then remaining photoresist on the Au layer are removed.
Described step C comprises,
C1, on the Au layer, apply photoresist, and the method by photoetching, the photoresist beyond the film forming district is carved;
C2, on the Au layer evaporation film-forming masking layer.
The viscosity of described photoresist is 5～10 lis of ripples; Applied thickness is 7000～9000 dusts.
Described step D comprises,
D1, the film forming masking layer in film forming district is peeled off, formed window in the film forming district;
D2, chip is put into sensitive membrane solution, form sensitive membrane in the film forming district.
As seen from the above technical solution provided by the invention, sound surface wave sensor chip of the present invention and preparation method thereof, owing to comprise the film forming masking layer, before the film forming district forms the chemical-sensitive film, utilize the film forming masking layer that non-film forming district is sheltered, can be good at solving in the sensitive membrane forming process shelter tight, consistency is poor, pollute problems such as chip, technical process is simple, efficient is high, reliable and stable, and is little to the influence of chip electrical property.
Description of drawings
Fig. 1 is the cross-sectional view of sound surface wave sensor chip of the present invention;
Fig. 2 is the planar structure schematic diagram of sound surface wave sensor chip of the present invention;
Fig. 3 is in the manufacture method of sound surface wave sensor chip of the present invention, evaporation Cr transition zone and Au layer and apply photoresist after the cross-sectional view of chip;
Fig. 4 is for carrying out the cross-sectional view after the photoetching to the chip of coating behind the photoresist;
Fig. 5 is for carrying out the cross-sectional view after the etching to the chip after the photoetching;
Fig. 6 is through over etching and the cross-sectional view of the chip after applying photoresist;
Fig. 7 for to etching and the chip after applying photoresist carry out cross-sectional view after the photoetching;
Fig. 8 is the cross-sectional view of the chip behind the evaporation film-forming masking layer;
Fig. 9 is the cross-sectional view of the chip after the film forming masking layer is windowed in the film forming district;
Figure 10 is the main flow chart of the manufacture method of SAW sensor chip of the present invention.
Embodiment
The embodiment that sound surface wave sensor chip of the present invention is preferable as shown in Figure 1, comprises piezoelectric substrate 1, and described piezoelectric substrate 1 is provided with Au (gold) layer 3.
As shown in Figure 2, described chip comprises interdigital transducer 9 and film forming district 5, specifically is that chip is divided into three zones, and the centre is film forming district 5, and the zone of both sides is respectively the zone at interdigital transducer 9 places.
And for example shown in Figure 1, the Au layer 3 at described interdigital transducer 9 positions is provided with film forming masking layer 7, and the Au floor 3 in described film forming district 5 is provided with sensitive membrane 8, and described sensitive membrane is for having the polymer film that adsorption property is conciliate in absorption to specific gas.Wherein, the main effect of film forming masking layer 7 is, 5 form in the process of sensitive membrane 8 in the film forming district, and other position of chip is played a protective role.The material of film forming masking layer is various suitable metals, nonmetallic compound or high-molecular organic material.
Preferably be provided with Cr (chromium) transition zone 2 between described piezoelectric substrate 1 and the Au layer 3, in order to strengthen the adhesive force of Au layer 3.
Described piezoelectric substrate 1 comprises various tangential quartz crystals, lithium columbate crystal, lithium tantalate, callium-lanthanum silicate crystal, lithium tetraborate crystal, also is included in the zinc oxide made on the non-piezoelectric dielectric, PZT (lead zirconate titanate) piezoelectric membrane etc.
The thickness of described Au layer 3 is 400～550 dusts, can be preferred thickness such as 400,420,450,500,530,550 dusts.
The thickness of described Cr transition zone 2 is 5～15 dusts, can be preferred thickness such as 5,8,10,12,15 dusts, preferably 10 dusts.
The thickness of described film forming masking layer 7 is 100～300 dusts, can be preferred thickness such as 100,120,160,192,250,285,300 dusts.
The manufacture method of the above-mentioned sound surface wave sensor chip of the present invention may further comprise the steps:
Step 11, on piezoelectric substrate 1 evaporation Au layer 3;
Step 12, Au floor 3 is carved interdigital transducer 9 and film forming district 5;
Step 13, on Au layer 3 evaporation film-forming masking layer 7, in this step, the carving at the Au layer of some position on the chip plates film forming masking layer 7 together with these positions during evaporation;
Step 14, the film forming masking layer in film forming district 5 is peeled off, 5 formed sensitive membrane 8 in the film forming district then.5 form in the process of sensitive membrane in the film forming district, and film forming masking layer 7 plays a protective role to other position.
In the above-mentioned step 11, before evaporation Au layer 3 on the piezoelectric substrate 1, evaporation Cr transition zone 2 on piezoelectric substrate 1 at first, evaporation Au layer 3 on Cr transition zone 2 can strengthen the adhesive force of Au layer 3 on piezoelectric substrate 1 so then.Before this, preferably at first clean piezoelectric substrate 1 by traditional handicraft.
As Fig. 3, Fig. 4, shown in Figure 5, described step 12 comprises,
Step 31, on Au layer 3 coating photoresist 4.
Be specially, utilize sol evenning machine evenly to apply photoresist 4 on Au layer 3 surface.Preferably adopt BP212 type photoresist, also can adopt the photoresist of other model.General 5～10 lis of ripples of viscosity can be 5,7,8,10 lis of ripples, are preferably 7 lis of ripples, and thickness is generally 7000 ~ 9000 Izod right sides, can be preferred thickness such as 7000,7600,8200,8900,9000 dusts.
Step 41, the method by photoetching are carved into the figure in interdigital transducer and film forming district on the photoresist layer.
Concrete grammar is, the chip behind the even glue is put into mask aligner, makes photoresist 4 by the SAW mask exposure.Light intensity is preferably 4.6mW, and the time for exposure is preferably 3s;
Chip after the exposure inserted in 7 ‰ the NaOH solution develop about 10 ~ 12 seconds, the photoresist of exposed portion is eroded, form photoresists protection figures on Au layer 3 surface.
Step 51, the method by etching are carved into the figure in interdigital transducer on the photoresist layer and film forming district on the Au floor 3, then remaining photoresist on the Au layer 3 are removed.
Concrete grammar is, utilizes IBE (ion beam etching machine), or other etching apparatus etches away Au layer 3 and the Cr transition zone 2 that chip surface does not have photoresist 4 protections, about 90 seconds time.Utilize plasma degumming machine then, the remaining photoresist 4 of disk surfaces that etching is crossed is removed, finish the preparation of chip surface metallic pattern.
As Fig. 6, Fig. 7, shown in Figure 8, described step 13 comprises,
Step 61, on Au layer 3 coating photoresist 4;
Step 71, the method by photoetching are fallen the photoresist beyond the film forming district 54 quarters;
The method and the preferred parameter of concrete gluing, photoetching are the same.
Step 81, on Au layer 3 evaporation film-forming masking layer 7.
As shown in Figure 9, described step 14 comprises,
Step 91, the film forming masking layer 7 in film forming district 5 is peeled off, formed window at 5 places, film forming district;
Step 92, described chip is put into sensitive membrane solution, 5 form sensitive membrane 8 in the film forming district, are preferably effect in 8 hours standing time, utilize molecule self assembly mode to form sensitive membrane 8, finish the making of entire chip.
As shown in figure 10, in the manufacturing process of above-mentioned surface wave sensor chip, general is not that single chip is made, but a plurality of chips on the whole wafer are carried out manufacturing process simultaneously, therefore, also to carry out scribing process after above-mentioned manufacturing process is finished, could form surface wave sensor chip shown in Figure 1, glue operations such as core, pressure welding, encapsulation at last and obtain surface acoustic wave sensor spare.
The present invention is before the film forming district forms the chemical-sensitive film, utilize the film forming masking layer that non-film forming district is sheltered, can be good at solving tight, the problems such as consistency is poor, pollution chip of sheltering in the sensitive membrane forming process, technical process is simple, reliable and stable, and is little to the influence of chip electrical property.
The above; only for the preferable embodiment of the present invention, but protection scope of the present invention is not limited thereto, and anyly is familiar with those skilled in the art in the technical scope that the present invention discloses; the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.
Claims (10)
1. a sound surface wave sensor chip comprises piezoelectric substrate, it is characterized in that, described piezoelectric substrate is provided with golden Au layer;
Described chip comprises interdigital transducer and film forming district;
The Au layer at described interdigital transducer position is provided with the film forming masking layer;
The Au floor in described film forming district is provided with sensitive membrane, and described sensitive membrane is for having the polymer film that adsorption property is conciliate in absorption to specific gas.
2. sound surface wave sensor chip according to claim 1 is characterized in that, is provided with chromium Cr transition zone between described piezoelectric substrate and the Au layer.
3. sound surface wave sensor chip according to claim 1 and 2 is characterized in that, described piezoelectric substrate comprises various tangential following at least a crystal:
Quartz crystal, lithium columbate crystal, lithium tantalate, callium-lanthanum silicate crystal, lithium tetraborate crystal.
4. sound surface wave sensor chip according to claim 1 and 2 is characterized in that,
The thickness of described Au layer is 400～550 dusts;
The thickness of described Cr transition zone is 5～15 dusts;
The thickness of described film forming masking layer is 100～300 dusts.
5. the manufacture method of an above-mentioned sound surface wave sensor chip is characterized in that, may further comprise the steps:
A, on piezoelectric substrate evaporation Au layer;
B, the Au floor is carved interdigital transducer and film forming district;
C, on the Au layer evaporation film-forming masking layer;
D, the film forming masking layer in film forming district is peeled off, formed sensitive membrane then in the film forming district.
6. the manufacture method of sound surface wave sensor chip according to claim 5 is characterized in that, in the described steps A, and before evaporation Au layer on the piezoelectric substrate, at first evaporation Cr transition zone on piezoelectric substrate, evaporation Au layer on the Cr transition zone then.
7. the manufacture method of sound surface wave sensor chip according to claim 5 is characterized in that, described step B comprises,
B1, on the Au layer, apply photoresist, and the method by photoetching, the figure in interdigital transducer and film forming district is carved on the photoresist layer;
B2, the method by etching are carved into the figure in interdigital transducer on the photoresist layer and film forming district on the Au floor, then remaining photoresist on the Au layer are removed.
8. the manufacture method of sound surface wave sensor chip according to claim 5 is characterized in that, described step C comprises,
C1, on the Au layer, apply photoresist, and the method by photoetching, the photoresist beyond the film forming district is carved;
C2, on the Au layer evaporation film-forming masking layer.
9. according to the manufacture method of claim 7 or 8 described sound surface wave sensor chips, it is characterized in that the viscosity of described photoresist is 5～10 lis of ripples; Applied thickness is 7000～9000 dusts.
10. the manufacture method of sound surface wave sensor chip according to claim 5 is characterized in that, described step D comprises,
D1, the film forming masking layer in film forming district is peeled off, formed window in the film forming district;
D2, chip is put into sensitive membrane solution, form sensitive membrane in the film forming district.
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| CNA2006101443286A CN101192818A (en) | 2006-12-01 | 2006-12-01 | Sound surface wave sensor chip and its making method |
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Cited By (12)
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| CN101847975A (en) * | 2010-03-31 | 2010-09-29 | 山东大学 | NdCa4O(BO3)3 crystal zero frequency temperature coefficient cut and application |
| CN101852770A (en) * | 2010-05-04 | 2010-10-06 | 电子科技大学 | Quick-response surface acoustic wave gas sensor and method for preparing same |
| CN101382522B (en) * | 2008-08-26 | 2011-01-26 | 北京中科飞鸿科技有限公司 | Method for producing surface acoustic wave sensor chip for gas detection |
| CN102476788A (en) * | 2010-11-25 | 2012-05-30 | 中山大学 | Curved plate wave sensitivity sensor and manufacturing method thereof |
| CN102608203A (en) * | 2012-02-16 | 2012-07-25 | 北京中科飞鸿科技有限公司 | Preparation method of surface acoustic wave sensor chip sensitive membrane for gas detection |
| CN104407035A (en) * | 2014-11-14 | 2015-03-11 | 无锡信大气象传感网科技有限公司 | Gas sensor chip |
| CN104597087A (en) * | 2014-11-14 | 2015-05-06 | 无锡信大气象传感网科技有限公司 | Manufacturing method of gas sensor chip |
| CN106153212A (en) * | 2015-04-17 | 2016-11-23 | 国家电网公司 | A kind of surface acoustic wave sensor manufacture method based on nano-imprint process |
| CN106209001A (en) * | 2016-06-29 | 2016-12-07 | 电子科技大学 | FBAR of based single crystal Lithium metaniobate thin slice and preparation method thereof |
| CN106603035A (en) * | 2016-12-23 | 2017-04-26 | 北京中科飞鸿科技有限公司 | Method for improving tolerance power of surface acoustic wave filter |
| CN106840056A (en) * | 2016-12-28 | 2017-06-13 | 电子科技大学 | A kind of alliteration surface wave strain transducer and its method for designing |
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Cited By (15)
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| CN101382522B (en) * | 2008-08-26 | 2011-01-26 | 北京中科飞鸿科技有限公司 | Method for producing surface acoustic wave sensor chip for gas detection |
| CN101847975A (en) * | 2010-03-31 | 2010-09-29 | 山东大学 | NdCa4O(BO3)3 crystal zero frequency temperature coefficient cut and application |
| CN101852770B (en) * | 2010-05-04 | 2012-05-30 | 电子科技大学 | Quick-response surface acoustic wave gas sensor and method for preparing same |
| CN101852770A (en) * | 2010-05-04 | 2010-10-06 | 电子科技大学 | Quick-response surface acoustic wave gas sensor and method for preparing same |
| CN102476788B (en) * | 2010-11-25 | 2014-10-08 | 中山大学 | Curved plate wave sensitivity sensor and manufacturing method thereof |
| CN102476788A (en) * | 2010-11-25 | 2012-05-30 | 中山大学 | Curved plate wave sensitivity sensor and manufacturing method thereof |
| CN102608203A (en) * | 2012-02-16 | 2012-07-25 | 北京中科飞鸿科技有限公司 | Preparation method of surface acoustic wave sensor chip sensitive membrane for gas detection |
| CN104407035A (en) * | 2014-11-14 | 2015-03-11 | 无锡信大气象传感网科技有限公司 | Gas sensor chip |
| CN104597087A (en) * | 2014-11-14 | 2015-05-06 | 无锡信大气象传感网科技有限公司 | Manufacturing method of gas sensor chip |
| CN106153212A (en) * | 2015-04-17 | 2016-11-23 | 国家电网公司 | A kind of surface acoustic wave sensor manufacture method based on nano-imprint process |
| CN106209001A (en) * | 2016-06-29 | 2016-12-07 | 电子科技大学 | FBAR of based single crystal Lithium metaniobate thin slice and preparation method thereof |
| CN106209001B (en) * | 2016-06-29 | 2019-02-15 | 电子科技大学 | The thin film bulk acoustic wave resonator and preparation method thereof of based single crystal lithium niobate thin slice |
| CN106603035A (en) * | 2016-12-23 | 2017-04-26 | 北京中科飞鸿科技有限公司 | Method for improving tolerance power of surface acoustic wave filter |
| CN106840056A (en) * | 2016-12-28 | 2017-06-13 | 电子科技大学 | A kind of alliteration surface wave strain transducer and its method for designing |
| CN110011633A (en) * | 2019-04-25 | 2019-07-12 | 北京中科飞鸿科技有限公司 | A kind of SAW filter preparation method with positive photoresist high adhesion force |
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