CN104319337A - Substrate-free LED device and manufacturing method thereof - Google Patents
Substrate-free LED device and manufacturing method thereof Download PDFInfo
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- CN104319337A CN104319337A CN201410599066.7A CN201410599066A CN104319337A CN 104319337 A CN104319337 A CN 104319337A CN 201410599066 A CN201410599066 A CN 201410599066A CN 104319337 A CN104319337 A CN 104319337A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a substrate-free LED device and a manufacturing method thereof. The LED device comprises an LED chip and a lens matched with the LED chip, wherein a conductive wiring layer is attached to the bottom of the lens, and an inner lead wire electrode and an outer lead wire electrode are arranged on the conductive wiring layer and are respectively and electrically connected with the LED chip and an external circuit. The manufacturing method of the substrate-free LED device comprises the steps of manufacturing the lens; manufacturing the conductive wiring layer at the bottom of the lens; connecting at least one of the electrodes of the LED chip with the conductive wiring layer on the corresponding lens. The substrate-free LED device is of the structure that the lens and a substrate are integrally arranged, cost is reduced, heat radiation effect is improved, the size of the device is decreased, meanwhile the reliability of the device is improved, and 360-deegree light emitting application is easily achieved.
Description
Technical field
The present invention relates to a kind of light emitting semiconductor device, particularly relate to the LED device with wiring on a kind of lens, belong to light-emitting diodes pipe manufacturer and packaging technology field.
Background technology
LED, due to the advantage such as have specular removal, environmental protection, the life-span is long, volume is little, is widely deployed in signal, display screen, mobile device, display, television set etc., and progressively substitutes conventional light source and enter into general illumination field.
Although the market penetration rate of LED continues to promote, compared with traditional lighting, its price is still higher, is to hinder its universal key factor.
Market also wishes that the reliability of LED promotes further.The thermal resistance reducing encapsulation and assembling can boost device Performance And Reliability effectively.
Meanwhile, at some Mobile solution, as the photoflash lamp etc. of mobile phone, need to reduce its thickness and volume further.
In addition, in application scenes, also wish the illumination realizing 360 degree of luminescences, realize better lighting experience.
Existing LED mainly adopts the citation form be fixed to by chip on support or substrate, and encapsulation is assembled on PCB further.Referring to shown in Fig. 1 is structural representation after existing support rack type LED is assembled into PCB, one or multiple chips 101 are mounted on support 102 by it, the electrode of chip 101 is connected on the lead electrode 104 of support by bonding wire 103,105 is outer lead electrode, and outer lead electrode 105 is welded on the pad 107 of PCB 106.Lens 108 are provided with above chip.Chip 101 can be coated with or can light-converting material be mixed with in lens 108.
Referring to shown in Fig. 2 is structural representation after existing base plate type LED is assembled into pcb board, one or multiple chips 201 mount on a substrate 202 by it, the electrode of chip 201 is connected on the first wiring layer 204 on substrate by bonding wire 203, and be electrical connected with the second wiring layer 205 of base plate bottom, the pad on the second wiring layer 205 is connected by welding procedure with the pad 207 of PCB 206.Lens 208 are provided with above chip.Chip 201 can be coated with or can light-converting material be mixed with in lens 208.
Please again consult Fig. 1 and Fig. 2, can see, existing encapsulation technology is fixed on by chip on support or substrate, it can increase the thermal resistance between chip to circuit board, if remove support or substrate, then less processing step and material can use, thus reduce costs, reduce thermal resistance, and reduce the thickness of system.
In current LED chip, positive assembling structure becomes main flow because chip technology maturation is comparatively simple.Aligning assembling structure chip at present mainly adopts the processing step of die bond bonding wire realize the fixing of chip and be electrically connected, and because die bond material can increase thermal resistance, bonding wire broken string is then the one of the main reasons that current LED lost efficacy, and causes device reliability to be deteriorated.Will improve package reliability further, the integrity problem that reduction chip die bond and bonding wire bring is also very necessary.
In addition, because substrate, support are in the light, the lighting angle of existing SMD encapsulation, substantially within 180 degree, can not meet the needs of the luminous illumination of current certain applications scene 360 degree completely.
For the problem of the above-described existing LED based on support or substrate, existingly the encapsulating structure of conventional stent or substrate is not adopted to occur.As the Chinese utility model patent that Authorization Notice No. is CN 201354966Y, disclose a kind of luminous two electrode tube diode of glass packaging, chip is fixed on lens by this encapsulation, support or substrate is not adopted to encapsulate, make to reduce packaging cost further and thickness becomes possibility, but this encapsulating structure is conventional package form not improvement relatively in heat radiation, simultaneously, owing to adopting the Electrode connection technique restriction of gold thread or wire, its package dimension reduces the restriction being subject to gold thread or the existence of other wire.
Summary of the invention
For the deficiencies in the prior art, main purpose of the present invention is to provide a kind of LED component and preparation method thereof, its design be wholely set by the lens and substrate that adopt band wiring, effectively can simplify the processing procedure of LED component, reduce the manufacturing cost of LED component, reduce package thickness and size, reduction thermal resistance, improve reliability.
For realizing aforementioned invention object, the technical solution used in the present invention comprises:
A kind of LED component without substrate, the lens comprising LED chip and coordinate with described LED chip, described lens Bottomattached has conductive wiring layer, described conductive wiring layer is distributed with lead electrode and outer lead electrode, described lead electrode and outer lead electrode are electrically connected with described LED chip and external circuit respectively.
Wherein, described lens are also as the substrate of described LED component.
Comparatively preferred, described lead electrode is directly connected with described conductive wiring layer with outer lead electrode, or described lead electrode and outer lead electrode and described conductive wiring layer are wholely set.
As one of better embodiment, at least one distribution of electrodes of described LED chip on described LED chip top, and this at least one electrode and described lead electrode in electrical contact or be electrically connected through conductive materials.
Further, described conductive materials can be selected from but be not limited to metal salient point, conductive solder or conducting resinl.
Further, the electrode of described LED chip is distributed in chip top, or the upper and lower surface of described LED chip is distributed with electrode.Such as, typically this type of LED chip can be positive cartridge chip or thin-film LED, but is not limited thereto.
As one of better embodiment, described lens bottom face is formed with at least one groove, described conductive wiring layer one end and the lead Electrode connection being distributed in described bottom portion of groove, the other end extends along described groove cell wall, and with the outer lead Electrode connection be distributed in outside described groove, and be wherein provided with at least one LED chip in a groove.
Further, described groove is preferably flat bottomed recess.
Further, the transparent colloid material of solidification is also filled with in the space between described LED chip and described lens.
As one of better embodiment, described lens surface and/or described lens interior and/or described chip surface are distributed with light-converting material.
Further, described light-converting material can be selected from but be not limited to fluorescent material or quantum dot.
As one of better embodiment, described LED component comprises more than one subelement, and each subelement comprises at least one LED chip and at least one lens.
Wherein, described LED component can comprise a plurality of LED chip, and this plurality of LED chip is connected by described conductive wiring layer and/or parallel connection.
Further, the material of described lens can be selected from but be not limited to glass, silica gel, epoxy resin, Merlon, polymethyl methacrylate, quartz or sapphire.
Comparatively preferred, described conducting wiring series of strata thin layer form, it is directly formed at bottom described lens, or is attached at bottom described lens, to make LED component more frivolous by modes such as bonding, welding.
Further, the material of described conductive wiring layer comprises inorganic or organic conductive material, described inorganic conductive material comprises metal or non-metallic conducting material, described non-metallic conducting material comprises conductive carbon material, especially preferably transparent conductive material is adopted, such as, the transparent conductive film etc. of the formation such as ITO, carbon nano-tube, Graphene.Postscript, is not affecting on the basis of its electric conductivity, and the width of conductive wiring layer etc. should be little as much as possible, to reduce blocking lens exiting surface.
Further, described lens upper surface portion or all, LED chip bottom area portion or all, as light-emitting area while of lens lower surface some or all of.Such as, when lens ensemble and LED chip entirety all adopt transparent material to be formed, LED component can be made to realize being close to the luminescence of 360 degree.
Further, bottom described transparent colloid, bottom lens, other regions, chip bottom region are provided with reflectorized material, such as white glue, metal or other high reverse--bias materials.
Further, the shape of described lens body can be hemisphere, elliposoidal, cuboid, cylindrical, or other combined shaped.
Further, described LED component is connected with printed wiring board (PCB) by brazing mode.
As one of better embodiment, described LED component is also fixedly connected with radiator, and wherein said LED chip is connected with radiator through reflective and/or Heat Conduction Material.
Further, described Heat Conduction Material comprises heat-conducting glue, thermal conductive solder or other highly heat-conductive material.
Further, described outer lead electrode forms plug-like in described rims of the lens portion, and is electrically connected by plug-in structure with external circuit.
Further, described lens are also provided with detent mechanism, described detent mechanism comprises location hole or guide pile.
Further, described outer lead electrode realizes being electrically connected with outside by the mode of Mechanical Contact or bonding wire.
A manufacture method for LED component, comprising:
S1. more than one lens are made;
S2. conductive wiring layer is made in the bottom of described lens;
S3. the conductive wiring layer at least one electrode of at least one LED chip and respective lens is electrically connected.
As one of better embodiment, the manufacture method of described LED component comprises:
S1. the array be made up of plural lenses is made;
S2. conductive wiring layer is made in the bottom of described lens;
S3. the conductive wiring layer at least one electrode of at least one LED chip and respective lens is electrically connected;
S4. described lens arra is separated into a plurality of LED component unit, each LED component unit comprises at least one LED chip and at least one lens.
Further, step S3 comprises:
Described lens are inverted in tool;
And, the lead electrode on described lens is electrically connected by bonding or welding manner with described LED chip.
Further, described welding manner can be selected from but be not limited to ultrasonic bond, thermosonic bonding, thermocompression bonding or eutectic weldering,
Further, the adhesives that described bonding way adopts can be selected from but be not limited to anisotropy conductiving glue.
Compared with prior art, advantage of the present invention comprises:
(1) by adopting, conductive wiring layer is being set as on the lens of substrate, and the electrode of LED chip is directly connected with described conductive wiring layer, the outer electrode of encapsulation is placed on lens simultaneously, the encapsulating structure of LED component can be slowed down, make LED component more frivolous, provide cost savings and processing step;
(2) owing to decreasing the link of connection, there is no the weak links such as the die bond bonding wire of conventional package, improve reliability, particularly when lens adopt glass material, due to glass and chip thermal mismatching relative to the silica gel of conventional package and the thermal mismatching of chip much smaller, glass and conventional encapsulant ratio are heated, influence of light is much smaller, and therefore its reliability also will improve greatly;
(3) reduce the thermal resistance of system, specifically, this encapsulation and assembling form thereof shorten heat conducting path, and decrease hot interface;
(4) flexibility of LED component assembling improves, and device can be integrated on a pcb board with other SMD components and parts better, also can fix on a heat sink mechanically;
(5) because the back side of LED chip can not be covered by substrate or support, the application of 360 degree of luminescences is more easily realized.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, the accompanying drawing that the following describes is only some embodiments recorded in the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation after prior art support rack type package group installs to PCB;
Fig. 2 is the structural representation after prior art base plate type package group installs to PCB;
Fig. 3 is the structural representation of a kind of LED component in embodiment 1;
Fig. 4 is the upward view of one-time formed lens arra in embodiment 1;
Fig. 5 is for lens arra shown in Fig. 4 is along the cutaway view in A-A ' direction;
Fig. 6 is that in embodiment 1, lens are fixed on the schematic diagram on tool;
Fig. 7 is that in embodiment 1, lens complete the partial structurtes schematic diagram after Wiring technique on tool;
Fig. 8 is that in embodiment 1, lens complete the partial structurtes schematic diagram after chip bonding on tool;
Fig. 9 be in embodiment 1 LED component paster to the schematic diagram of printed circuit board;
Figure 10 is the assembling schematic diagram that the thermoelectricity of a kind of LED component in embodiment 2 is separated;
Figure 11 is the vertical view of the LED component comprising multiple lens unit in embodiment 3;
Figure 12 is for LED component shown in Figure 11 is along the generalized section in B-B ' direction;
Figure 13 is that in embodiment 4, a kind of upper and lower surface can the structural representation of LED component of bright dipping;
Description of reference numerals: LED chip 101, support 102, bonding wire 103, lead electrode 104, outer lead electrode 105, PCB 106, pad 107, lens 108, LED chip 201, substrate 202, bonding wire 203, first wiring layer 204, second wiring layer 205, PCB 206, pad 207, lens 208, lens 1, metal wiring layer 2, lead-in wire salient point 3, LED chip 4, chip wiring 5(is called for short wiring 5), transparent colloid 6, outer lead electrode 7, lens 401, lens unit main body 402, groove 403, guide pile 404, tool 601, location hole 602, groove 603, pad 604, PCB 901, pad 902, solder bump 903, PCB 1001, radiator 1002, pad 1003, compressing tablet 1004, screw 1005, lens substrate 1101, wiring 1102, plug 1103, location hole 1104
,the mixture 1303 of the mixture layer 1302 of lens substrate 1301, fluorescent material and glue, fluorescent material and glue.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be described in detail the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art obtain under the prerequisite not making creative work, all belongs to the scope of protection of the invention.
embodiment 1:
Refer to shown in Fig. 3 the structural representation of the LED component being a kind of lens substrate one in the present invention one exemplary embodiments.This LED component comprises a premolded lenses 1 and at least one LEDs chip 4(is called for short chip as follows).Lens 1 are provided with metal or transparent conductive material wiring layer 2, chip there is metal electrode 5, metal wiring layer 2(on lens 1 is called for short wiring 2) be connected by lead-in wire salient point 3 with the metal electrode 5 on chip 4, the ad-hoc location of the wiring 2 on lens 1 is provided with the outer lead electrode 7(of this LED component as follows also referred to as " outer electrode ").Usual chip is fixed in the groove bottom lens, is filled with transparent colloid 6 and solidifies in groove by underfill process, thus makes do not have bubble between LED chip and lens, reduces reflection loss.Transparent adhesive tape lower surface, die bottom surface and lens lower surface can be provided with the reflecting material such as white glue or high reflecting metal, thus improve the light efficiency of LED component.
In aforementioned LED component, lens can adopt many integrated mode expendable mo(u)lds shaping.
Referring again to the upward view that Fig. 4 is one-time formed lens arra, be the cutaway view of lens arra shown in Fig. 4 along A-A ' direction shown in Fig. 5, wherein 401 is justifying lens, and 402 is the main body of lens unit, and 403 is groove, and 404 is guide pile.
Refer to and Figure 6 shows that in embodiment 1, lens are fixed on the schematic diagram on tool, wherein, 601 is the tool of arranging in pairs or groups with justifying lens 401, and justifying lens 401 are inverted and are placed on tool 601.Tool 601 has location hole 602 and groove 603.Guide pile 404 on lens is fixed in the location hole 602 on tool.Be placed with the pad 604 that softer material does as rubber in the groove 603 of tool, be not scratched to protect lens body and certain support is provided.Lens 401 and tool 601 can also be fixed by machinery or the mode such as vacuum is formed and more combines closely.
After lens 401 are combined with tool 601, the technique such as photoetching, plated film can be carried out more easily as single wafer, form surface wiring layer, passivation layer etc.
Such as, refer to Fig. 7, it is the Local map after lens 401 complete Wiring technique on tool 601, by techniques such as photoetching, plated film, corrosion, defines wiring layer 2, outer lead electrode 7, lead salient point 3.
The material of aforesaid wiring layer 2 can select transparent conductive material, also can select the electric conducting materials such as metal.
Figure 8 shows that lens 401 on tool 601, complete chip bonding after Local map.Please refer to Fig. 3, Fig. 7 and Fig. 8, further chip 4 back side is moved upwards through Flip Chip Bond Technique and be bonded to bottom lens 401.Pad 5 on chip 4 is connected by salient point 3 with wiring layer 2.Further, transparent colloid 6 inserted the space bottom chip and lens by underfill process, thus improve luminous efficiency.
Further, high reverse--bias material can be covered as metal, white glue etc., to improve device light emitting efficiency bottom chip 4 back side, transparent colloid 6 surface and lens 401.
Afterwards, lens cutting and separating is become individual devices as shown in Figure 3.For convenience of device isolation, lens 401 can be previously provided with groove between each unit.
This device chips also can be many, and the series/parallel that the wiring on scioptics realizes needing connects.When chip is many, the outer electrode of this device can also according to different from the connection in series-parallel relation of external circuit and be set to more than 2.
This embodiment chips can be positive cartridge chip, and namely both positive and negative polarity is all at chip upper surface.If positive cartridge chip, then the outer electrode of device is all located on lens.
This embodiment chips can also be thin-film LED, and namely the positive and negative electrode of chip is distributed in upper and lower surface respectively.If thin-film LED, then the outer electrode on lens and chip upper electrode are electrically connected, and as the first outer electrode of device, and the lower surface electrode of chip is directly as the second outer electrode of device.
This embodiment chips can be except electrode zone, upper surface, side or the two be coated with light-converting material simultaneously.Can also be equipped with for lens surface or be mixed with light-converting material in lenticular body in this embodiment.
Please refer to Fig. 9, its be a kind of lens substrate one LED component and printed circuit board (pcb) in conjunction with schematic diagram, the outer electrode 7(of this LED component that is outer lead electrode) be connected with the pad 902 on PCB 901 through reflow soldering process by solder bump 903.Chip bottom is also connected with PCB 901 by salient point 903, realizes shorter heat dissipation path, thus reduces thermal resistance.
If fruit chip is positive cartridge chip, then chip bottom can also be connected with PCB by other Heat Conduction Materials or high reflecting material, realizes better luminosity or heat dispersion.
This embodiment realizes the paster type encapsulation without substrate by a series of measure, compared with encapsulating: save materials and process step, thus can reduce the cost of encapsulation with conventional bracket, substrate or COB; Shorten heat dissipation path, there is lower thermal resistance; Reduce the thickness of encapsulation; Improve the flexibility of its assembling.
embodiment 2:
The structure of a kind of LED component of the present embodiment also can refer to Fig. 3-Fig. 8, and the preparation process of device is identical with embodiment one.
The assembling schematic diagram that a kind of thermoelectricity referring to shown in Figure 10 the LED component being lens substrate of the present invention one is separated, this device chips 4 is positive cartridge chip, its positive and negative electrode is all at chip upper surface, and the outer electrode 7 of scioptics 1 is drawn and realized being electrically connected with outside.The lower surface of chip 4 is directly connected with radiator 1002 top by heat-conducting silicone grease, eutectic weldering or other modes, thus realizes low thermal resistance.Outer electrode 7 on lens 1 realizes being connected with exposed electrical by the PCB 1001 of given shape.Device is fixed on radiator 1002 by compressing tablet 1004, pad 1003 and screw 1005.
In addition, the outer electrode 7 on lens can also be realized by the mode such as Mechanical Contact, bonding wire with the electric connection of external circuit.
This embodiment realizes chip bottom by a series of measure and contacts with the direct of radiator, and is fixed on PCB bottom conventional die, compared with PCB contacts with radiator again, has lower thermal resistance.
embodiment 3:
Please refer to Figure 11-Figure 12, wherein Figure 11 is LED component (the being called for short device as follows) schematic top view of the lens substrate one comprising multiple lens unit, and Figure 12 is that this device shown in Figure 11 is along the generalized section in B-B ' direction.
This device is the multiple unit module be integrated on lens substrate 1101, and wherein, each single-element lens main body can be aspheric design according to the needs of light type.Wiring 1102 on chip 4 scioptics substrate 1101 in each cell module realizes series/parallel.Lens substrate edge is provided with outer electrode, and outer electrode coordinates with lens substrate and forms plug 1103, can be formed be connected with the plug-in of external circuit by supporting socket.This lens substrate 1101 can be provided with location hole 1104.Device can be fixed on a heat sink through location hole and its upper and lower pad with screw.The lower surface of chip is directly connected with radiator ledge by heat-conducting silicone grease, eutectic weldering or other modes, thus realizes low thermal resistance.
This embodiment realizes multiple unit module by a series of measure, and chip bottom contacts with the direct of radiator, and plug-type connects, and has lower thermal resistance concurrently, does not need the techniques such as Reflow Soldering, more easily assembles and the advantage such as replacement compared with conventional module.
embodiment 4:
Refer to shown in Figure 13 be upper and lower surface can bright dipping lens substrate one LED component (being called for short device as follows), wherein, lens substrate 1301(is hereinafter referred to as substrate) be provided with groove, multiple chip 4 forms connection in series-parallel by the wiring 2 on substrate 1301 and connects in groove.The mixture 1303 of fluorescent material and glue to be coated in groove and to solidify.7 is the outer electrode of device, by Reflow Soldering or machinery is fixing etc. that mode assembles and is formed and the connection of external circuit.The upper surface of substrate 1301 is also provided with the mixture layer 1302 of fluorescent material and glue and solidifies.
This embodiment realizes multi-chip modules by a series of measure and upper and lower surface is luminous, is particularly suitable for the application that some need 360 degree of luminescences.
It should be noted that, in this article, the such as relational terms of first and second grades and so on is only used for an entity or operation to separate with another entity or operating space, and not necessarily requires or imply the relation that there is any this reality between these entities or operation or sequentially.And, term " comprises ", " comprising " or its any other variant are intended to contain comprising of nonexcludability, thus make to comprise the process of a series of key element, method, article or equipment and not only comprise those key elements, but also comprise other key elements clearly do not listed, or also comprise by the intrinsic key element of this process, method, article or equipment.When not more restrictions, the key element limited by statement " comprising ... " or " comprising at least one ... ", and be not precluded within process, method, article or the equipment comprising described key element and also there is other identical element.
The above is only the specific embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (15)
1. the LED component without substrate, comprise LED chip, it is characterized in that it also comprises the lens coordinated with described LED chip, described lens Bottomattached has conductive wiring layer, described conductive wiring layer is distributed with lead electrode and outer lead electrode, described lead electrode and outer lead electrode are electrically connected with described LED chip and external circuit respectively.
2. the LED component without substrate according to claim 1, is characterized in that described lead electrode is directly connected with described conductive wiring layer with outer lead electrode, or described lead electrode and outer lead electrode and described conductive wiring layer are wholely set.
3. the LED component without substrate according to claim 1 and 2, it is characterized in that at least one distribution of electrodes of described LED chip is on described LED chip top, and this at least one electrode and described lead electrode in electrical contact or be electrically connected through conductive materials, described conductive materials comprises metal salient point, conductive solder or conducting resinl.
4. the LED component without substrate according to claim 3, is characterized in that the electrode of described LED chip is distributed in chip top, or the upper and lower surface of described LED chip is distributed with electrode.
5. the LED component without substrate according to claim 3, it is characterized in that described lens bottom face is formed with at least one groove, described conductive wiring layer one end and the lead Electrode connection being distributed in described bottom portion of groove, the other end extends along described groove cell wall, and with the outer lead Electrode connection be distributed in outside described groove, and be provided with at least one LED chip in described groove.
6. the LED component without substrate according to claim 3, is characterized in that the transparent colloid material being also filled with solidification in the space between described LED chip and described lens.
7. the LED component without substrate according to claim 1 and 2, it is characterized in that it comprises more than one module, each module comprises more than one subelement, and each subelement comprises at least one LED chip.
8. according to claim 1,2, the LED component without substrate according to any one of 4-6, it is characterized in that the light-emitting area of at least part of surface bottom the part or all of surface of described lens and/or described LED chip as described LED component.
9. according to claim 1,2, the LED component without substrate according to any one of 4-6, it is characterized in that at least one at least regional area bottom described transparent colloid, bottom described lens, at least regional area bottom described LED chip is provided with reflectorized material, described reflectorized material comprises white glue or metal.
10. according to claim 1,2, the LED component without substrate according to any one of 4-6, it is characterized in that described LED chip is connected with radiator through heat conduction and/or reflectorized material, described reflectorized material comprises white glue or metal, and described Heat Conduction Material comprises heat-conducting glue or thermal conductive solder.
11. according to claim 1,2, the LED component without substrate according to any one of 4-6, it is characterized in that described outer lead electrode forms plug-like in described rims of the lens portion, and be electrically connected by plug-in structure with external circuit.
12. according to claim 1,2, the LED component without substrate according to any one of 4-6, it is characterized in that described lens are also provided with detent mechanism, described detent mechanism comprises location hole or guide pile.
Without the manufacture method of the LED component of substrate according to any one of 13. claim 1-12, it is characterized in that comprising:
S1. more than one lens are made;
S2. conductive wiring layer is made in the bottom of described lens;
S3. the conductive wiring layer at least one electrode of at least one LED chip and respective lens is electrically connected.
14. according to described in claim 13 without the manufacture method of the LED component of substrate, it is characterized in that comprising:
S1. the array be made up of plural lenses is made;
S2. conductive wiring layer is made in the bottom of described lens;
S3. the conductive wiring layer at least one electrode of at least one LED chip and respective lens is electrically connected;
S4. described lens arra is separated into a plurality of LED component unit, each LED component unit comprises at least one LED chip and at least one lens.
15. according to claim 13 or 14 without the manufacture method of the LED component of substrate, it is characterized in that step S3 comprises:
Described lens are inverted in tool;
And, the lead electrode on described lens is electrically connected by bonding or welding manner with described LED chip;
Wherein, described welding manner comprises ultrasonic bond, thermosonic bonding, thermocompression bonding or eutectic weldering,
The adhesives that described bonding way adopts comprises anisotropy conductiving glue.
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108025515A (en) * | 2015-07-31 | 2018-05-11 | 索尼半导体解决方案公司 | Lens substrate, semiconductor device and electronic equipment |
CN108119788A (en) * | 2016-11-29 | 2018-06-05 | 卡尔蔡司工业测量技术有限公司 | For producing the method and apparatus of lighting device |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1823428A (en) * | 2003-07-14 | 2006-08-23 | 奥斯兰姆奥普托半导体股份有限两合公司 | Light-emitting component provided with a luminescence conversion element |
JP2007250817A (en) * | 2006-03-16 | 2007-09-27 | Stanley Electric Co Ltd | Led |
CN101064329A (en) * | 2006-04-28 | 2007-10-31 | 松下电器产业株式会社 | Optical apparatus and optical module using the same |
JP2008205138A (en) * | 2007-02-20 | 2008-09-04 | Misuzu Kogyo:Kk | Electronic optical device mounted body, and electronic optical apparatus incorporating it therein |
CN201354966Y (en) * | 2009-01-21 | 2009-12-02 | 浙江联众光电科技股份有限公司 | Glass packaged light emitting diode |
CN204204905U (en) * | 2014-10-29 | 2015-03-11 | 杨晓丽 | Without the LED component of substrate |
-
2014
- 2014-10-29 CN CN201410599066.7A patent/CN104319337A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1823428A (en) * | 2003-07-14 | 2006-08-23 | 奥斯兰姆奥普托半导体股份有限两合公司 | Light-emitting component provided with a luminescence conversion element |
JP2007250817A (en) * | 2006-03-16 | 2007-09-27 | Stanley Electric Co Ltd | Led |
CN101064329A (en) * | 2006-04-28 | 2007-10-31 | 松下电器产业株式会社 | Optical apparatus and optical module using the same |
JP2008205138A (en) * | 2007-02-20 | 2008-09-04 | Misuzu Kogyo:Kk | Electronic optical device mounted body, and electronic optical apparatus incorporating it therein |
CN201354966Y (en) * | 2009-01-21 | 2009-12-02 | 浙江联众光电科技股份有限公司 | Glass packaged light emitting diode |
CN204204905U (en) * | 2014-10-29 | 2015-03-11 | 杨晓丽 | Without the LED component of substrate |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108025515A (en) * | 2015-07-31 | 2018-05-11 | 索尼半导体解决方案公司 | Lens substrate, semiconductor device and electronic equipment |
US10690814B2 (en) | 2015-07-31 | 2020-06-23 | Sony Semiconductor Solutions Corporation | Lens substrate, semiconductor device, and electronic apparatus |
CN108119788A (en) * | 2016-11-29 | 2018-06-05 | 卡尔蔡司工业测量技术有限公司 | For producing the method and apparatus of lighting device |
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